CN114269039A - LED device with high electro-optic modulation bandwidth - Google Patents
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Abstract
The invention discloses an LED device with high electro-optic modulation bandwidth, which comprises an LED circuit, an inductive device and a packaging substrate, wherein the LED circuit comprises a plurality of LED-A sub-circuits and LED-B sub-circuits, the LED-A sub-circuits and the LED-B sub-circuits comprise a plurality of LED chips, the LED-A sub-circuits are connected with the inductive device in series, the LED-B sub-circuits are not connected with the inductive device in series, the LED-A sub-circuits and the LED-B sub-circuits are connected in parallel and are respectively fixed on the packaging substrate with the inductive device to form electrical connection, and all the circuits are simultaneously conducted. The invention can realize the illumination application of the LED-A and LED-B sub-circuits, can make more high-frequency signals flow into the LED-B sub-circuits, and improves the modulation bandwidth when the LED-B sub-circuits are used as signal emission sources for communication application.
Description
Technical Field
The invention relates to the technical field of semiconductor light-emitting devices, in particular to an LED device with high electro-optic modulation bandwidth.
Background
In the background of the prior art, it is still difficult to achieve a low-cost practical level for a visible light communication LED transmitter that achieves both illumination and communication. Commercial LED chips generally only can emit monochromatic light and can be used for illumination in special scenes, and fluorescent powder needs to be excited to realize general illumination, or multiple monochromatic LEDs are adopted to form a multi-primary mixed-color illumination array. When the single-chip LED is matched with fluorescent powder to realize the illumination function, the fluorescent powder can greatly weaken the intensity of communication signals and limit the modulation bandwidth of LED visible light communication, and the fluorescent LED is not suitable to be used as an emission light source of high-speed visible light communication. In addition, the size of the lighting LED chip is large-size and high-power LED, the capacitance of the lighting LED chip is large, the RC time constant is large, the modulation bandwidth is small and limited within dozens of MHz, and if the lighting LED chip is not supported by an external equalization circuit, the high communication speed is difficult to realize. In many studies on LEDs for visible light communication, the size of the LEDs tends to be small to realize a higher modulation bandwidth, but the light efficiency is also seriously reduced, and the LEDs are not suitable for illumination. Of course, special chip structures are also studied to achieve higher modulation bandwidths, but the manufacturing cost is increased and the reliability of the device may be reduced.
The Chinese patent publication No. CN 106571358B discloses a visible light communication emitting device adopting a micro-inductance pattern substrate, wherein an inductance coil is manufactured on the substrate and is connected with a 4 multiplied by 4 LED series array on a sapphire substrate in series to realize high-power use and compensate capacitance to improve response frequency.
The invention discloses a Chinese patent granted publication No. CN 107134448B, and discloses an integratable method for improving the modulation bandwidth of a visible light communication LED light source, which is characterized in that a metal film resistor is deposited in the middle of an insulating substrate firstly, then two parallel plate capacitors are manufactured on two sides of the insulating substrate, the two capacitors are connected to two ends of an LED in series and are connected with the film resistor in parallel, low-frequency signals can be reduced to pass through the LED, the balance effect is realized, and the modulation bandwidth is further improved.
Therefore, the problem that LED illumination and communication are difficult to be compatible is solved, and more solutions are to integrate a plurality of LED chips into a single chip array device and separately control the chips with different functions for illumination and communication.
Disclosure of Invention
The invention aims to provide an LED device with high electro-optic modulation bandwidth, which solves the problem of small electro-optic modulation bandwidth of the LED device in the aspect of visible light communication on the premise of not influencing illumination.
The purpose of the invention is realized as follows:
the LED device with the high electro-optic modulation bandwidth comprises an LED circuit, an inductive device and a packaging substrate, wherein the LED circuit comprises a plurality of LED-A sub-circuits and LED-B sub-circuits, the LED-A sub-circuits and the LED-B sub-circuits comprise a plurality of LED chips, the LED-A sub-circuits are connected with the inductive device in series, the LED-B sub-circuits are not connected with the inductive device in series, the LED-A sub-circuits and the LED-B sub-circuits are connected in parallel and are respectively fixed on the packaging substrate together with the inductive device to form electrical connection, and all the circuits are conducted simultaneously.
Preferably, the inductive device is a chip inductor, and the inductance value of the chip inductor is greater than that of the LED-B sub-circuit in the working state; the packaging substrate sequentially comprises a solder mask layer, a pad layer, a line layer, an insulating layer and a substrate layer from top to bottom, wherein the pad layer is provided with a pad, the line layer is provided with a printed circuit, and the edge of the packaging substrate is provided with a positive electrode and a negative electrode.
Preferably, the LED chip is of a vertical structure, and the LED chip of the LED-B sub-circuit is not coated with fluorescent powder.
The invention also provides a preparation method of the LED device with high electro-optic modulation bandwidth, which comprises the following steps:
(1) placing the LED-A sub-circuit and the LED-B sub-circuit on a packaging substrate together, arranging the LED-B sub-circuit in the center of the packaging substrate, wherein the LED-A sub-circuit is distributed at equal angles at the periphery of the LED-B sub-circuit, and arranging the bonding pad at the tail end of the printed circuit;
(2) fixing the LED-A sub-circuit, the LED-B sub-circuit and the inductive device on the surface of a packaging substrate;
(3) electrically connecting the LED chips in the LED-A sub-circuit and the LED-B sub-circuit with a bonding pad on a packaging substrate in a lead bonding mode, and connecting the LED-A sub-circuit and the LED-B sub-circuit in parallel;
(4) packaging and curing the LED-A sub-circuit and the LED-B sub-circuit by using packaging glue, and forming a convex lens shape after curing;
(5) the inductive devices are connected in series in the LED-A sub-circuit, and the simultaneous conduction of all the circuits is realized.
Preferably, the LED-A sub-circuit and the LED-B sub-circuit are single LED chips.
Preferably, in the step (2), the LED-a sub-circuit and the LED-B sub-circuit are respectively die-bonded on the surface of the package substrate by die-bonding solder material, and the inductive device is soldered on the package substrate by solder material.
Preferably, in step (4), the surfaces of the LED-A sub-circuit and the LED-B sub-circuit are packaged together and cured.
Preferably, the LED-A sub-circuit and the LED-B sub-circuit can also be individually packaged LED chips, and the chips are packaged on the device substrate.
Preferably, the LED-a sub-circuit and the LED-B sub-circuit may also be LED chip modules formed by a plurality of LED chips, and the LED chip modules are respectively packaged on the device substrate.
Preferably, in the step (2), the LED-a sub-circuit, the LED-B sub-circuit and the inductive device are respectively soldered to the package substrate by a solder material.
Under the influence of the electrical characteristics of the visible light communication LED device, the LED device is a nonlinear element, the impedance of the LED device is not a constant value, and the impedance of the LED device is changed under the injection of transmission signals with different direct current drives or different frequencies. Under the bias of the operating current of the LED, the LED can present high impedance characteristic under high frequency. Based on the electrical characteristics, the invention can add an inductor in series in each LED-A sub-circuit, and the inductance value of the inductor is larger than that of the LED-B sub-circuit in a working state, so that the impedance of the LED-A sub-circuit series circuit is far larger than that of the LED-B sub-circuit under a specific frequency, and at the moment, communication electric signals can flow into each LED-B sub-circuit more. Therefore, when the channels are simultaneously conducted, the visible light communication response intensity of the low-frequency signals of the LED-B sub-circuits is unchanged, the visible light communication response intensity of the high-frequency signals is improved, the electro-optic modulation bandwidth is improved, and if the LED-A sub-circuits are provided with a plurality of LED-A sub-circuits, the frequency response intensity of the LED-B sub-circuits in a plurality of frequency bands can be even improved. Meanwhile, each sub-circuit of the LED-A and each sub-circuit of the LED-B only have a small-amplitude radio frequency signal to pass through, the current passing through each circuit is not obviously influenced, and the illumination performance is not greatly influenced.
The LED device with the high electro-optic modulation bandwidth has the advantages that the structure and the preparation method are simple, the current preparation process of the LED lighting device can be compatible, the available modulation bandwidth of the visible light communication LED light source can be remarkably improved, and the functions of lighting and communication can be considered.
Description of the drawings:
FIG. 1 is a schematic circuit diagram of a high electro-optic modulation bandwidth LED device of the present invention;
fig. 2 is a schematic structural diagram of an LED device provided in embodiment 1 of the present invention;
fig. 3 is a structure local enlarged view of an LED device provided in embodiment 1 of the present invention;
fig. 4 is a structural sectional view of an LED device provided in embodiment 1 of the present invention;
fig. 5 is a frequency response curve diagram of an LED device provided in embodiment 1 of the present invention in an operating state;
fig. 6 is a schematic structural diagram of an LED device provided in embodiment 2 of the present invention;
fig. 7 is a structural sectional view of an LED device provided in embodiment 2 of the present invention;
fig. 8 is a schematic structural diagram of an LED device provided in embodiment 3 of the present invention.
Description of reference numerals:
101. the LED-A sub-circuit 101a LED-A1 sub-circuit 101B LED-A2 sub-circuit 102 LED-B sub-circuit 103 device substrate 104 pad 105 inductive device 106 negative electrode 107 positive electrode 108 printed circuit 109 package substrate 110 die attach solder 111 package glue 112 solder.
The specific implementation mode is as follows:
the invention is further illustrated by the following examples in connection with the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. It is to be noted that the drawings of the present invention are provided in a very simplified and non-precise scale for convenience and clarity in order to facilitate the description of the present invention.
Example 1
As shown in fig. 1 to 5, embodiment 1 of the present invention provides an LED device with a high electro-optic modulation bandwidth, which includes an LED circuit, an inductive device 105, and a package substrate 109, where the LED circuit includes a plurality of LED-a sub-circuits 101 and LED-B sub-circuits 102, the LED-a sub-circuits 101 and LED-B sub-circuits 102 include a plurality of LED chips, the LED-a sub-circuits 101 are connected in series with the inductive device 105, the LED-B sub-circuits 102 are not connected in series with the inductive device 105, the LED-a sub-circuits 101 and the LED-B sub-circuits 102 are connected in parallel, and are respectively fixed on the package substrate 109 to form an electrical connection, and the circuits are turned on at the same time.
The inductive device 105 is a chip inductor, and the inductance value of the chip inductor is larger than that of the LED-B sub-circuit 101 in the working state; the package substrate 109 sequentially comprises a solder mask layer, a pad layer, a circuit layer, an insulating layer and a substrate layer from top to bottom, the pad layer is provided with a pad 104, the circuit layer is provided with a printed circuit 108, and the edge of the package substrate 109 is provided with a positive electrode 107 and a negative electrode 106.
In this embodiment, each of the LED-a sub-circuit 101 and the LED-B sub-circuit 102 is a single LED chip, and 5 yellow LED chips with a vertical structure of 27 mils are selected, wherein 4 of the LED-a sub-circuits are divided into 4 paths, and 1 LED-B sub-circuit 102 is divided into 1 path. For convenience of manufacture and illustration, the present embodiment is not optimally designed, and the 4-way LED-a sub-circuits are all represented by the same reference numeral 101.
The preparation method of the LED device of the present embodiment comprises:
(1) placing the LED-A sub-circuit 101 and the LED-B sub-circuit 102 on a packaging substrate together, arranging the LED-B sub-circuit 102 in the center of the packaging substrate 109, arranging the LED-A sub-circuit 101 at the periphery of the LED-B sub-circuit 102 in an equal angle distribution, and placing the bonding pad 104 at the tail end of the printed circuit 108;
(2) the LED-A sub-circuit 101 and the LED-B sub-circuit 102 are respectively fixed on the surface of a packaging substrate 109 through a fixed crystal welding material 110, and an inductive device 105 is welded on the packaging substrate through a welding material 112;
(3) electrically connecting the LED chips in the LED-A sub-circuit 101 and the LED-B sub-circuit 102 with the bonding pad 104 on the packaging substrate 109 in a lead bonding mode, and connecting the LED-A sub-circuit 101 and the LED-B sub-circuit 102 in parallel;
(4) packaging and curing the surfaces of the LED-A sub-circuit 101 and the LED-B sub-circuit 102 together by using packaging adhesive 111, and forming a convex lens shape after curing;
(5) for a 27mil vertical structure yellow LED, under the bias state of current 100mA, the parasitic inductance value is about tens nH, so that the impedance of the LED-A sub-circuit 101 can be far greater than that of the LED-B sub-circuit 102 by selecting a patch inductance of 1 muH. The inductive devices are connected in series in the LED-A sub-circuit, and the simultaneous conduction of all the circuits is realized.
Example 1 is only to verify the feasibility of the patent and not to optimize the design, fig. 5 is the frequency response curve (S21) tested in example 1, and it can be seen from fig. 5 that the modulation bandwidth of the LED-B sub-circuit 102 at a current of 100mA is 59.1MHz, which is much larger than the modulation bandwidth of a single LED chip passing 100mA of 15.5MHz, while the modulation bandwidth of the LED-a sub-circuit 101 at a current of 100mA is only 5.6 MHz. It can be seen that the modulation bandwidth of the chip LED-B sub-circuit 102 for communication is significantly increased in this device.
Example 2
As shown in fig. 1, fig. 6 and fig. 7, this embodiment provides an LED device with high electro-optic modulation bandwidth, and embodiment 2 mainly differs from embodiment 1 in that the LED-a sub-circuit 101 and the LED-B sub-circuit 102 are individually packaged LED chips, and the chips are packaged on a device substrate 103. In this embodiment, the LED chips are all 45mil blue LED chips, the encapsulation adhesive of the 4-way LED-a sub-circuit 101 is silica gel added with yellow phosphor powder, so that the silica gel emits white light for illumination, and the encapsulation adhesive of the 1-way LED-B sub-circuit 102 is pure silica gel. For convenience of manufacture and illustration, the present embodiment is not optimally designed, and the 4-way LED-a sub-circuits are all represented by the same reference numeral 101. The package substrate 109 is provided with a positive electrode 107 and a negative electrode 106 at its edge. The rest of the structure is the same as that of example 1.
The preparation method of the LED device of the present embodiment comprises:
(1) placing the LED-A sub-circuit 101 and the LED-B sub-circuit 102 on a packaging substrate together, arranging the LED-B sub-circuit 102 in the center of the packaging substrate 109, arranging the LED-A sub-circuit 101 at the periphery of the LED-B sub-circuit 102 in an equal angle distribution, and placing the bonding pad 104 at the tail end of the printed circuit 108;
(2) soldering the LED-a sub-circuit 101, the LED-B sub-circuit 102 and the inductive device 105 to the package substrate by means of a soldering material 112;
(3) electrically connecting the LED chips in the LED-A sub-circuit 101 and the LED-B sub-circuit 102 with the bonding pad 104 on the packaging substrate 109 in a lead bonding manner, and connecting the LED-A sub-circuit 101 and the LED-B sub-circuit 102 in parallel;
(4) the LED chips in the LED circuit are respectively and independently packaged on the device substrate 103 by packaging adhesive 111, and are cured to be in a convex lens shape;
(5) for a 45mil vertical blue LED, under a bias condition of 350mA, the parasitic inductance value is about several tens nH, and a1 μ H patch inductance is selected to make the impedance of the LED-a sub-circuit 101 much larger than that of the LED-B sub-circuit 102 when the communication frequency is higher than a specific frequency. The inductive devices 105 are connected in series in the LED-a sub-circuit 101 to achieve simultaneous conduction of the channels.
The LED device prepared in example 2 can realize daily white light illumination and also can realize visible light communication applications.
Example 3
Referring to fig. 1, the present embodiment provides an LED device with high electro-optic modulation bandwidth, and embodiment 3 differs from embodiment 1 in that in the present embodiment, the LED-a sub-circuit 101 and the LED-B sub-circuit 102 are LED chip modules, and the LED chip modules are respectively packaged on the device substrate 103. In this embodiment, the LED-a sub-circuit 101 has two paths, namely, an LED-a1 sub-circuit 101a and an LED-a2 sub-circuit 101b, chips adopted by the LED-a sub-circuit 101 are all 45mil yellow light LED chips, each path has 3 yellow light LEDs connected in series, and the packages are filled with pure silica gel respectively; the chips used by the LED-B sub-circuit 102 are all 45mil blue light LED chips, 3 blue light LEDs are connected in series, and the packages are all filled with pure silica gel respectively. The rest of the structure is the same as that of example 1.
As shown in fig. 8, in the manufacturing process of the LED device of the present embodiment, the LED-a1 sub-circuit 101a, the LED-a2 sub-circuit 101B are placed on the surface of the package substrate 109 having the printed circuit 108 and the pads 104, together with the LED-B sub-circuit 102. The LED-B sub-circuit 102 is located at the center of the package substrate 109, the LED-A1 sub-circuit 101a and the LED-A2 sub-circuit 101B are distributed at equal angles around the periphery of the LED-B sub-circuit 102, the pad 104 is disposed at the end of the printed circuit 108, and the package substrate 109 has a positive electrode 107 and a negative electrode 106 at its edge. The LED-a1 sub-circuit 101a, the LED-a2 sub-circuit 101B, the LED-B sub-circuit 102, and the inductive device 105 are soldered to the surface of the package substrate 109 with the solder material 112, and simultaneous conduction is achieved. The rest of the preparation process is the same as example 2.
For 3 45mil vertical structure yellow light LED series modules, under the bias state of current 350mA, the parasitic inductance value is about 90nH, 1 muH of patch inductor is selected to be connected in series to the LED-A1 sub-circuit 101a, and 0.5 muH of patch inductor is selected to be connected in series to the LED-A2 sub-circuit 101B, so that the impedance of the two paths is larger than that of the LED-B sub-circuit 102 in different degrees, and the gains of the frequency response of the LED-B sub-circuit 102 under different frequencies are different, so that the modulation bandwidth is improved.
The LED device prepared in embodiment 3 can realize multi-primary-color white light illumination and can also realize visible light communication application.
It should be understood that the above description is only exemplary of the present invention, and is not intended to limit the present invention, and any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An LED device with high electro-optic modulation bandwidth, characterized by: the LED circuit comprises a plurality of LED-A sub-circuits and LED-B sub-circuits, wherein the LED-A sub-circuits and the LED-B sub-circuits comprise a plurality of LED chips, the LED-A sub-circuits are connected with the inductive devices in series, the LED-B sub-circuits are not connected with the inductive devices in series, the LED-A sub-circuits and the LED-B sub-circuits are connected in parallel and are respectively fixed on the packaging substrate together with the inductive devices to form electrical connection, and all the circuits are conducted simultaneously.
2. The high electro-optic modulation bandwidth LED device of claim 1, wherein: the inductive device is a patch inductor, and the inductance value of the inductive device is greater than that of the LED-B sub-circuit in the working state; the packaging substrate sequentially comprises a solder mask layer, a pad layer, a line layer, an insulating layer and a substrate layer from top to bottom, wherein the pad layer is provided with a pad, the line layer is provided with a printed circuit, and the edge of the packaging substrate is provided with a positive electrode and a negative electrode.
3. The high electro-optic modulation bandwidth LED device of claim 1, wherein: the LED chip is of a vertical structure, and the LED chip of the LED-B sub-circuit is not coated with fluorescent powder.
4. A method for preparing the high electro-optic modulation bandwidth LED device according to claim 2, wherein: the method specifically comprises the following steps:
(1) placing the LED-A sub-circuit and the LED-B sub-circuit on a packaging substrate together, wherein the LED-B sub-circuit is arranged in the center of the packaging substrate, the LED-A sub-circuit is distributed at equal angles on the periphery of the LED-B sub-circuit, and the bonding pad is arranged at the tail end of the printed circuit;
(2) fixing the LED-A sub-circuit, the LED-B sub-circuit and the inductive device on the surface of a packaging substrate;
(3) electrically connecting the LED chips in the LED-A sub-circuit and the LED-B sub-circuit with a bonding pad on a packaging substrate in a lead bonding mode, and connecting the LED-A sub-circuit and the LED-B sub-circuit in parallel;
(4) packaging and curing the LED-A sub-circuit and the LED-B sub-circuit by using packaging glue, and forming a convex lens shape after curing;
(5) the inductive devices are connected in series in the LED-A sub-circuit, and the simultaneous conduction of all the circuits is realized.
5. The method for preparing the LED device with high electro-optic modulation bandwidth as claimed in claim 4, wherein: the LED-A sub-circuit and the LED-B sub-circuit are single LED chips.
6. The method for preparing the LED device with high electro-optic modulation bandwidth as claimed in claim 4, wherein: the LED-A sub-circuit and the LED-B sub-circuit are LED chips which are packaged independently, and the chips are packaged on a device substrate.
7. The method for preparing the LED device with high electro-optic modulation bandwidth as claimed in claim 4, wherein: the LED-A sub-circuit and the LED-B sub-circuit are LED chip modules which are respectively packaged on the device substrate.
8. The method for preparing the LED device with high electro-optic modulation bandwidth as claimed in claim 4 or 5, wherein: in the step (2), the LED-A sub-circuit and the LED-B sub-circuit are respectively die-bonded on the surface of the packaging substrate through die-bonding welding materials, and the inductive device is welded on the packaging substrate through the welding materials.
9. The method for preparing the LED device with high electro-optic modulation bandwidth as claimed in claim 4 or 5, wherein: in step (4), the surfaces of the LED-A sub-circuit and the LED-B sub-circuit are packaged together and cured.
10. The method for preparing the LED device with high electro-optic modulation bandwidth as claimed in claim 4, 6 or 7, wherein: in the step (2), the LED-A sub-circuit, the LED-B sub-circuit and the inductive device are respectively welded on the packaging substrate through welding materials.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115119355A (en) * | 2022-08-29 | 2022-09-27 | 南昌硅基半导体科技有限公司 | High-speed LED device with positioning and lighting functions and manufacturing method thereof |
| CN115119355B (en) * | 2022-08-29 | 2022-12-27 | 南昌硅基半导体科技有限公司 | High-speed LED device with positioning and lighting functions and manufacturing method thereof |
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| CN114269039B (en) | 2022-06-14 |
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