CN114256736B - Quick tunable semiconductor laser - Google Patents
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- CN114256736B CN114256736B CN202111580976.7A CN202111580976A CN114256736B CN 114256736 B CN114256736 B CN 114256736B CN 202111580976 A CN202111580976 A CN 202111580976A CN 114256736 B CN114256736 B CN 114256736B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
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Abstract
The invention discloses a fast tunable semiconductor laser, which is of a double-section structure or a multi-section structure; the double-section structure consists of a section of resistor area and a section of gain area, or consists of two sections of gain areas; the multi-section structure is formed by alternately forming a double-section structure by a plurality of groups of resistor areas and gain areas; the resistance is increased by doping the epitaxial layer of the resistive region or the gain region, and tuning of the lasing wavelength is achieved by varying the magnitude of the injection current. According to the invention, epitaxial material butt-joint growth is adopted to realize different doping of different areas in the epitaxial layer of the laser chip, so that different direct conductivity distribution in the laser is realized, and different resistances are caused along the cavity; because the high-resistance region of the laser can be used as a heating function, the refractive index of the laser along the cavity can be adjusted through injecting current, and the wavelength of the laser can be quickly tuned.
Description
Technical Field
The invention relates to the technical field of photons and photoelectrons, in particular to a semiconductor laser with adjustable wavelength, and a light source can be applied to the technical fields of various information such as a wavelength division multiplexing optical communication module, laser gas detection, an optical fiber sensing demodulator, a laser radar and the like.
Background
The tunable laser can change the wavelength of the laser, and is a key device in various fields such as a wavelength division multiplexing optical module, laser gas absorption spectrum detection, a fiber grating demodulator, a laser radar and the like. However, the tunable laser needs to ensure single-mode characteristics and other performances such as power while changing the wavelength, so the development difficulty is great. While there are now mature tunable laser schemes such as sampled grating based DBR lasers, multi-wavelength laser arrays, external cavity filters in combination with gain chips, etc., which are disclosed in the following academic journal:
1. flower gold flat, jiang Yi: research progress of tunable external cavity semiconductor lasers, volume 42, 2 nd phase of semiconductor photoelectricity 2021, month 2;
2. lv Xiangdong, zhao Jianyi, xiong Yonghua, yu Saijia, ma Weidong: design and research of tunable laser based on sampling grating, research on optical communication, 2019, 6 th period;
3. dong Lei: widely tunable SGDBR semiconductor laser theory and experimental research, doctor's thesis.
However, these solutions have the defects of complicated laser structure, high manufacturing difficulty, low yield and the like, so that the cost is high. These lasers have a wide tuning range, typically 30nm or more, but have a slow tuning speed. In many applications, related system applications are greatly limited due to the cost, performance, etc. of tunable lasers.
Therefore, there is a need for a laser chip that is manufactured at low cost and can be tuned at a high speed, and at the same time, the laser chip can be easily tested and packaged, and the structure is compact, which is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a fast tunable semiconductor laser, which aims to solve the above technical problems.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a fast tunable semiconductor laser, the semiconductor laser being of a dual-segment or multi-segment construction;
the double-section structure consists of a section of resistor area and a section of gain area, or consists of two sections of gain areas; the multi-section structure is formed by alternately forming the double-section structure formed by a plurality of groups of resistor areas and gain areas; the resistance is increased by doping the epitaxial layer of the resistive region or the gain region, and tuning of the lasing wavelength is achieved by varying the magnitude of the injection current.
According to the technical scheme, the epitaxial material is adopted for butt-joint growth to realize different doping of different areas in the epitaxial layer of the laser chip, so that different direct conductivity distribution in the laser is realized, and different resistances are caused along the cavity; because the high-resistance region of the laser can be used as a heating function, the refractive index of the laser along the cavity can be adjusted through injecting current, and the wavelength of the laser can be quickly tuned.
Preferably, in the above-mentioned fast tunable semiconductor laser, the light emitting end surfaces of the dual-segment structure and the multi-segment structure are both coated with an antireflection film, and the other end surfaces are both coated with an antireflection film.
Preferably, in the above-mentioned fast tunable semiconductor laser, in the dual-segment structure formed by a segment of resistive region and a segment of gain region, the resistance of the resistive region is controlled by doping the epitaxial layer to achieve a higher resistance, so that the manufacturing of additional temperature control means such as thermal thin film resistor is avoided; the gain area is a light-emitting area, and the heating value of the resistance area is large by changing the injection current, so that the control of the refractive index is realized, and the tuning of the wavelength is realized; in the dual-section structure formed by the two sections of gain areas, the epitaxial layers of the two sections of gain areas are doped differently, so that different resistance values can be realized by the resistor, and different refractive index changes of the two sections can be realized by injection current, so that different Bragg wavelength change amounts can be realized, and tuning of lasing wavelength is realized.
Preferably, in the above-mentioned fast tunable semiconductor laser, in the multi-segment structure, the grating is fabricated in a resistive region or a gain region, the lengths of the two regions are reasonable, and the length of the resistive region or the gain region is set so that the 0-level resonance peak of the grating is in the material gain range, the other levels are outside the gain range, the heating value of the resistive region is large, the refractive index change is large, and the wavelength tuning is realized by changing the current.
Preferably, in the above-mentioned fast tunable semiconductor laser, the dual-segment structure composed of a resistor segment and a gain segment shares a pair of positive and negative electrodes, or uses two separately controlled positive and one negative electrodes; the two-stage structure consisting of two-stage gain sections shares a pair of positive and negative electrodes, or uses two separately controlled positive and one negative electrode.
Preferably, in the above-mentioned fast tunable semiconductor laser, an active region of the semiconductor laser is a wavelength of visible light, near infrared, mid infrared or terahertz.
Preferably, in the above-mentioned fast tunable semiconductor laser, the grating on the active region or the resistive region of the semiconductor laser is a buried grating, a waveguide sidewall grating, or a surface grating.
Preferably, in the above-mentioned fast tunable semiconductor laser, the semiconductor laser patch is mounted on a carrier, and is assembled on a refrigerator to control the temperature, and the tuning of the laser wavelength is achieved by current tuning.
Preferably, in the above-mentioned fast tunable semiconductor laser, the band fluorescence wavelength of the resistive region is the same as that of the gain region, or the band fluorescence wavelength of the gain region is smaller than that of the resistive region, so as to implement a passive waveguide.
Preferably, in the above-mentioned fast tunable semiconductor laser, the back end of the semiconductor laser integrates an optical amplifier and a modulator, so as to implement a tunable laser and an optical modulation for equalizing optical power of different wavelengths of light.
Compared with the prior art, the invention discloses a fast tunable semiconductor laser, which has the following beneficial effects:
1. according to the invention, epitaxial material butt-joint growth is adopted to realize different doping of different areas in the epitaxial layer of the laser chip, so that different direct conductivity distribution in the laser is realized, and different resistances are caused along the cavity; because the high-resistance region of the laser can be used as a heating function, the refractive index of the laser along the cavity can be adjusted through injecting current, and the wavelength of the laser can be quickly tuned.
2. The invention does not need means such as extra manufacturing of a thermistor and the like to control the temperature, does not need extra manufacturing of a phase region and complex control of a plurality of electrodes, and has the same manufacturing process as that of the traditional semiconductor laser and the photoelectronic chip, so that the invention can be produced in a large scale and at low cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a tunable laser with a resistive region and a gain region according to embodiment 1 of the present invention;
FIG. 2 is a schematic diagram showing the structure of positive electrode independent control of the resistive zone and the gain zone according to embodiment 1 of the present invention;
FIG. 3 is a schematic diagram of the resonance of light provided in embodiment 1 of the present invention in a laser;
FIG. 4 is a diagram showing the reflection bandwidth of the left reflection film according to embodiment 1 of the present invention;
FIG. 5 is a diagram illustrating the reflection bandwidth of the right grating according to embodiment 1 of the present invention;
FIG. 6 is a schematic diagram of a parallel structure of two resistors in the resistor area and the gain area according to embodiment 1 of the present invention;
FIG. 7 is a graph showing the variation of temperature along the laser cavity provided in example 1 of the present invention;
FIG. 8 is a schematic diagram showing the effective refractive index of the laser waveguide according to embodiment 1 of the present invention;
FIG. 9 is a diagram showing the conventional wavelength shift of the lasing wavelength within the reflection bandwidth of the grating according to embodiment 1 of the present invention;
FIG. 10 is a schematic diagram of a dual gain section dual stage structure according to embodiment 2 of the present invention;
FIG. 11 is a schematic diagram of a dual electrode structure according to embodiment 2 of the present invention;
FIG. 12 is a graph showing the change of the resonant wavelength of the laser with current according to embodiment 2 of the present invention;
FIG. 13 is a graph showing the change of the resonant wavelength of the laser with current according to embodiment 2 of the present invention;
FIG. 14 is a schematic diagram of a multi-segment structure of the gain region of the resistor region of the laser according to embodiment 3 of the present invention;
FIG. 15 is a schematic view showing the temperature variation in a multi-sectional wall according to embodiment 3 of the present invention;
FIG. 16 is a diagram showing the sampled grating multi-channel reflection provided in embodiment 3 of the present invention;
FIG. 17 is a diagram of the material gain limited bandwidth provided in embodiment 3 of the present invention;
fig. 18 is a diagram showing a butt-joint growth process flow provided by the invention.
Wherein:
1-a resistive region; a 2-gain region; 3-an antireflection film; 4-reflection increasing film; 5-grating; 6-positive electrode; 7-negative electrode.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1:
referring to fig. 1 and 2, the embodiment of the invention discloses a dual-section structure of a resistor area 1 and a gain area 2;
the laser is divided along the cavity into two parts, one of which is the resistive region 1 and the other of which is the gain region 2. The doping of different epitaxial regions is realized by means of butt-joint growth and the like in the epitaxial manufacturing process of the laser. The epitaxial material of the resistor region 1 is doped little, and the doping concentration is also different because the resistor region 1 is doped little in the region close to the quantum well. The doping concentration can be designed such that the internal series resistance of the epitaxial region has a relatively high value. The quantum well fluorescence (PL) spectral wavelength in this region is recommended to shift more than 100nm to short wavelengths, i.e. to be a passive waveguide for lasing wavelengths. The doping of the gain region 2 is the same as the quantum well PL spectrum wavelength as a conventional laser, mainly producing the resonant amplification of the laser. The positive and negative electrodes may be shared by both regions, or the positive electrode 6 may be independently controlled, as shown in fig. 2. Since the total number of electrodes is relatively small, typically 1-2 electrodes, chip driving control is easy. And because the internal conductivity of the resistance region 1 is small and has higher resistance, heat is directly generated in the epitaxial layer and the waveguide, the refractive index is directly changed in the epitaxy, the control efficiency is high, and the temperature is controlled without means such as extra external thermal resistors. The whole structure is compact, the temperature control speed is high, and the use is convenient. The doping distribution generally adopts gradual change distribution, namely a region close to the quantum well or the waveguide high refractive index core layer, and the doping is small; the doping of the high refractive index core layer region far away from the quantum well or waveguide is large, so that on one hand, light propagation loss is small, and on the other hand, functional failure caused by doping expansion is reduced.
The left side of the laser can be coated with a reflection enhancing film 4, and the right side is coated with a reflection enhancing film 3 on the light emergent surface. Since the waveguide grating is fabricated on the active layer of the gain region 2, the reflection bandwidth of the wavelength is limited, and the reflection film on the left side has a reflection bandwidth of a larger wavelength range. This structure will form an optical resonance as shown in fig. 3-5. The resonant wavelength of the laser is thus related to the grating bragg wavelength, the refractive index of the resistive region 1, i.e. the wavelength of light satisfying the phase matching condition is a potential lasing wavelength.
In general, the two parts of the laser chip resistor area 1 and the gain area 2 of the structure are similar to the parallel connection of two resistors, namely, the resistor R1 of the resistor area 1 and the resistor R2 of the gain area 2 are connected in parallel, as shown in fig. 6. Since R1 is designed to be large in resistance, more heat is emitted, and R2 is small in resistance and less in heat productivity. The temperature change along the cavity is shown in fig. 7. For semiconductor materials, the temperature is approximately proportional to the refractive index, so the effective refractive index of the laser waveguide is distributed along the cavity as shown in FIG. 8. Since the power consumption of the resistive region 1 varies with current much more than the gain region 2, the effective refractive index of the resistive region 1 varies by much more than the gain region 2 when the laser varies the injection current for one positive electrode case, resulting in a change in resonant mode, i.e., lasing wavelength. On the one hand, this change tends to increase the overall temperature, so that the lasing wavelength tends to drift overall toward longer wavelengths, and on the other hand, because the refractive index of the resistive region 1 has a relatively large relative change compared to the gain region, the lasing wavelength is also more oriented toward longer wavelengths, as shown in fig. 9. The length design of the resistive region needs to be reasonable so that single mode lasing can be ensured. Typically, the laser chip is mounted on a carrier and is provided with a refrigerator for temperature control. Because the laser chip is small in size and stable in ambient temperature, the temperature of the surrounding large environment can be quickly increased and decreased according to the injection current. So that when the current changes, the wavelength changes very quickly.
Example 2:
referring to fig. 10, the present embodiment employs a two gain section 2 structure. This structure also achieves the different doping of the two gain regions 2 by means of butt growth or the like, resulting in different resistances. The two sections may employ the same positive electrode 6 and negative electrode 7, or the electrodes may be controlled separately, as shown in fig. 11. Because the two sections have different resistances, the effective refractive index of the two sections changes differently along with the injection of the current, that is, the wavelength shift change of the grating reflection spectrum of the two sections is different, so that the resonance peak, that is, the lasing wavelength, changes, as shown in fig. 12 and 13. Of course, an increase in current, due to heat generation, also causes the overall wavelength to shift toward longer wavelengths. Tuning of the wavelength is the sum of the two effects.
Example 3:
referring to fig. 14, the present embodiment adopts a multi-stage structure. In this case, if the grating 5 is only fabricated in the gain region 2, this is similar to a sampled grating. The resonant optical path of light in this configuration is greatly changed in heat like almost the whole cavity because it is influenced by both the resistive region 1 and the gain region 2, and exhibits periodicity, so that the refractive index is greatly changed by the resistive region 1 as well as the whole cavity, as shown in fig. 15. The change in the effective refractive index of the entire cavity can be conveniently achieved by the change in the injection current. It is noted here that because of the sampling structure, the grating exhibits multi-channel reflection, as in fig. 16, so that the resistive region 1 needs to be relatively short, such that the 0-order reflection peak has a certain wavelength difference from the other orders, such that the 0-order is within the material gain wavelength, and the other orders are outside the gain wavelength, as in fig. 16 and 17.
The resonance wavelength of the laser can be adjusted by designing an active region quantum well structure to realize visible light and near infrared wavelengths, and can also be designed to realize mid-infrared and even terahertz wavelengths. The structure of this embodiment is mainly to control the resistive region, so it is applicable to lasers of different wavelengths. The grating 5 can be a buried grating, namely, the grating is manufactured on the surface of the primary epitaxial wafer and then secondary epitaxy is carried out; or a waveguide sidewall grating, i.e. the grating is manufactured on the sidewall of the ridge waveguide; or a surface grating, i.e. a laser grating, is fabricated on the surface of the ridge waveguide, which is generally a large period high order grating structure.
Due to the thermal effect of the laser, when the heating value is large, the gain of the laser is reduced, and the light output is weak. If the optical power of different wavelengths is required to be nearly the same, an optical amplifier is integrated behind the laser, and the power of the optical amplifier is adjusted by monitoring the backlight power of the laser, so that the light-emitting power balance is realized. The modulator may also be integrated to achieve wavelength tunability and modulation.
The key one-step process of the structure proposed by the present invention is the butt-joint growth of epitaxial material, as shown in fig. 18. The process is a conventional epitaxial processing process. First, a layer of silicon dioxide is deposited on the primary epitaxial wafer as a mask, as shown in fig. 18 (b). The mask on the surface of the region to be grown is etched away by photolithography, etc., to expose the epitaxial material, as shown in fig. 18 (c). The unnecessary epitaxial structure is etched away by dry and wet etching means or the like as shown in fig. 18 (d). Then, the epitaxial material needed by us grows in the etched area, if the epitaxial material is a resistor area, the doping concentration needs to be accurately controlled in a better range, graded doping is generally adopted, the doping of the area close to the quantum well is small, or the area is not doped, particularly the P-type doped area needs to be reasonably controlled, and the influence of the area on the conductivity is relatively large, as shown in fig. 18 (e). Then the silicon dioxide mask is corroded, and other layers of materials are grown on the epitaxial material or the grating is manufactured.
Laser fabrication flow (ridge waveguide buried grating laser for example):
the substrate of the semiconductor laser in the invention generally uses III-V group compound semiconductor materials (such as GaAlAs/GaAs, inGaAs/InGaP, gaAsP/InGaP, inGaAsP/GaAsP, alGaInAs, etc.), and various ternary and quaternary compound semiconductor materials such as II-VI group compound semiconductor materials and IV-VI group compound semiconductor materials can also be used.
The high-power DFB semiconductor laser provided by the invention has the advantages that one end of the high-power DFB semiconductor laser adopts the anti-reflection film, the end surface reflectivity of the anti-reflection film is in the range of 0.05% to 1%, and the other end of the high-reflection film adopts the high-reflection film, and the reflectivity is more than 95%, so that the light-emitting power of the laser can be increased. The high power DFB semiconductor laser of the present invention may be used in a variety of bands, such as 1310 and 1550 and 1650 bands. The grating period value and the gain region quantum well material need to be designed according to the specific required lasing wavelength. The epitaxial structure mainly comprises a substrate, a buffer layer, a lower limiting layer, a multiple quantum well (well and barrier) and an upper limiting layer, a grating layer, a graded doping layer, a cap layer and the like from bottom to top.
First epitaxial material growth is performed, and the material grows to the grating layer. Material butt growth was performed by the method shown in fig. 18. And then performing secondary epitaxy to the cap layer after grating. And then etching the sector and the single-mode waveguide, electrically isolating the plated oxide film, opening an electrode window, evaporating the electrode positively, thinning and evaporating the negative electrode. Finally, the mixture is dissociated into bars, and end surface coating is carried out.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. The fast tunable semiconductor laser is characterized in that the semiconductor laser is of a double-section structure or a multi-section structure;
the double-section structure consists of a section of resistor area (1) and a section of gain area (2), or consists of two sections of gain areas (2); the multi-section structure is formed by alternately forming the double-section structure by a plurality of groups of resistor areas (1) and gain areas (2); the resistance is improved through doping an epitaxial layer of the resistance region (1) or the gain region (2), and tuning of the lasing wavelength is realized through changing the magnitude of injection current;
the light emergent end surfaces of the double-section structure and the multi-section structure are plated with an antireflection film (3), and the other end surfaces are plated with an antireflection film (4); the active region of the semiconductor laser is visible light, near infrared, mid infrared or terahertz wavelength; the grating (5) on the active area or the resistance area (1) of the semiconductor laser is a buried grating, a waveguide side wall grating or a surface grating; the semiconductor laser patch is arranged on a carrier and is assembled on a refrigerator for temperature control, and the wavelength tuning of the laser is realized through current tuning.
2. A fast tunable semiconductor laser according to claim 1, characterized in that in the dual-segment structure of a resistive region (1) and a gain region (2), the epitaxial layer doping of the resistive region (1) increases the resistance; in the dual-section structure formed by the two sections of gain areas (2), the epitaxial layers of the two sections of gain areas (2) are doped differently.
3. A fast tunable semiconductor laser according to claim 1, characterized in that in the multi-segment structure a grating (5) is fabricated in a resistive region (1) or a gain region (2), the length of the resistive region (1) or gain region (2) being set such that the grating 0 order resonance peak is within the material gain range and the other orders are outside the gain range.
4. A fast tunable semiconductor laser according to claim 1, characterized in that the two-segment structure of a resistive segment (1) and a gain segment (2) shares a pair of positive (6) and negative (7) electrodes, or two separately controlled positive (6) and one negative (7) electrode; the two-stage structure consisting of the two-stage gain section (2) shares a pair of positive electrode (6) and negative electrode (7), or uses two separately controlled positive electrodes (6) and one negative electrode (7).
5. A fast tunable semiconductor laser according to any one of claims 1-4, characterized in that the resistive region (1) has the same band fluorescence wavelength as the gain region (2) or the gain region (2) has a smaller band fluorescence wavelength than the resistive region (1), thereby realizing a passive waveguide.
6. A fast tunable semiconductor laser according to any one of claims 1-4, wherein the semiconductor laser back-end integrates an optical amplifier and modulator to achieve tunable laser and optical modulation that exhibit optical power balancing at different wavelengths of light.
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| JPH10256675A (en) * | 1997-03-14 | 1998-09-25 | Canon Inc | Variable wavelength semiconductor laser, its driving method, and optical communication system using the same |
| CN101622763A (en) * | 2007-03-08 | 2010-01-06 | 日本电信电话株式会社 | Wavelength variable semiconductor laser element, and apparatus and method for controlling the same |
| CN104466670A (en) * | 2013-09-13 | 2015-03-25 | 阿尔佩斯激光有限公司 | Tunable laser, a method for making, and a method for operating such a laser |
| CN105846312A (en) * | 2015-01-12 | 2016-08-10 | 南京大学（苏州）高新技术研究院 | Monolithic integration double-segment type DFB semiconductor laser and array |
| CN105356292A (en) * | 2015-11-30 | 2016-02-24 | 武汉电信器件有限公司 | Tunable wavelength semiconductor laser |
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