CN114242664A - Low-stress high-heat-conduction IGBT power module packaging structure - Google Patents
Low-stress high-heat-conduction IGBT power module packaging structure Download PDFInfo
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- CN114242664A CN114242664A CN202111501398.3A CN202111501398A CN114242664A CN 114242664 A CN114242664 A CN 114242664A CN 202111501398 A CN202111501398 A CN 202111501398A CN 114242664 A CN114242664 A CN 114242664A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 306
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Abstract
An IGBT power module packaging structure with low stress and high heat conduction. The chip comprises a base plate, an insulating substrate base plate and a chip which are sequentially bonded from bottom to top; the insulating substrate base plate comprises an upper metal layer, an insulating substrate and a lower metal layer which are sequentially bonded from top to bottom; the insulating substrate comprises a plurality of first insulating substrate substrates and second insulating substrate substrates; the first insulating substrate substrates are respectively in a rectangular structure and are uniformly distributed at intervals; the second insulating substrate base sheet is embedded between the adjacent first insulating substrate base sheets, and the side surfaces of the second insulating substrate base sheets are attached. The invention not only provides an effective heat dissipation channel, reduces the junction temperature of the device and the influence of the junction temperature on the device characteristics, but also can effectively release the stress strain of the structure, and avoids the performance degradation and failure of the device caused by the action of the structure on the insulating substrate, the chip and the solder layer.
Description
Technical Field
The invention relates to the technical field of power electronic devices, in particular to a low-stress high-heat-conductivity IGBT power module packaging structure.
Background
IGBT (insulated gate bipolar transistor) power devices are used in a wide range of fields from inverters of hybrid vehicles to power converters of wind power generators, and are developed from conventional IGBT power devices into IGBT power modules or IGBT smart power modules with increasing application demands. In order to improve the current processing capacity of the IGBT power module, a plurality of IGBT chips are connected in parallel in the IGBT power module, a freewheeling diode is integrated according to application requirements, an insulating substrate is adopted among the silicon chip, the base plate and the heat dissipation layer of the power module in the prior art for electric isolation, and different insulating substrate materials and module manufacturing technologies are adopted for the IGBT power module according to different rated power of devices.
The temperature change in the bonding process and the stress generated in the packaging structure by the power cycle during application can cause the strain in the insulating substrate to generate warpage or even fracture of the insulating substrate, and act on the chip and the chip solder layer to cause the performance degradation or even failure of the device. The substrate size of the Direct Bonding Copper (DBC) insulating substrate containing the insulating substrate in the prior art is small, and the substrate is only suitable for a low-power IGBT device or a power module. The large-size insulating substrate base plate required by the high-power IGBT device or the power module generally adopts an Insulating Metal Substrate (IMS) technology, and the insulating substrate of the high-power IGBT device or the power module adopts a polymer material, so that the defects of low heat conduction and low capacitive crosstalk problem related to a thin polymer layer of the polymer material are overcome.
In the prior art, the insulating substrate material suitable for the IGBT power module is alumina ceramic, aluminum nitride ceramic, silicon nitride ceramic and the like. Alumina is the most commonly used insulating substrate material, which is technically mature, low cost, and easy to metallize and machine, but for high power applications, its thermal conductivity is too low and its coefficient of thermal expansion is severely mismatched with that of silicon. The thermal conductivity of the aluminum nitride is 6 times higher than that of the aluminum oxide, the thermal expansion coefficient is more matched with that of the silicon material, the aluminum nitride is easy to process and has the advantage in high-power application, but the cost of the aluminum nitride is 4 times higher than that of the aluminum oxide. The coefficient of thermal expansion of silicon nitride is well matched with that of silicon, and the silicon nitride has high thermal conductivity, is easy to metalize and machine, but is 2 times more expensive than alumina in cost.
Disclosure of Invention
Aiming at the problems, the invention provides a structure comprising a composite insulating substrate base plate, which not only provides an effective heat dissipation channel and reduces the junction temperature of a device and the influence of the junction temperature on the device characteristics, but also can effectively release the stress strain of the structure and avoid the performance degradation and failure of the device caused by the action of the structure on an insulating substrate, a chip and a solder layer.
The technical scheme of the invention is as follows: a low-stress high-heat-conductivity IGBT power module packaging structure comprises a base plate, an insulating substrate base plate and a chip which are sequentially bonded from bottom to top;
the insulating substrate base plate comprises an upper metal layer, an insulating substrate and a lower metal layer which are sequentially bonded from top to bottom;
the insulating substrate comprises a plurality of first insulating substrate substrates and second insulating substrate substrates;
the first insulating substrate substrates are respectively in a rectangular structure and are uniformly distributed at intervals;
the second insulating substrate base sheet is embedded between the adjacent first insulating substrate base sheets, and the side surfaces of the second insulating substrate base sheets are attached.
The second insulating substrate is in a cross-shaped structure.
The second insulating substrate comprises a plurality of first cross-shaped insulating substrates;
the first cross-shaped insulating substrate comprises four short arms which are embedded in the middle of the insulating substrate and are positioned between the adjacent first insulating substrate substrates.
The structure also comprises a plurality of twenty-shaped insulating substrates;
the second cross-shaped insulating substrate comprises three short arms and a long arm, is embedded in the side part of the insulating substrate and is positioned between the adjacent first insulating substrate;
the long arm of the second cross-shaped insulating substrate extends to the outer edge of the insulating substrate.
The structure also comprises four thirty-fourth insulating substrates;
the thirty-first insulating substrate is embedded among the four first insulating substrate substrates at four corners of the insulating substrate, and the two long arms of the thirty-first insulating substrate extend to the outer edge of the insulating substrate.
The thickness of the first insulating substrate is the same as that of the second insulating substrate.
The top surface and the bottom surface of the first insulating substrate wafer and the second insulating substrate wafer are respectively in the same plane.
The length of each short arm of the first cross-shaped insulating substrate is equal to one half of the length of each side of the first insulating substrate attached with the first cross-shaped insulating substrate.
The length of each short arm of the second cross-shaped insulating substrate is equal to one half of the length of each edge of the first insulating substrate attached to the second cross-shaped insulating substrate;
the length of one long arm of the second cross-shaped insulating substrate sheet is equal to the length of the edge of the first insulating substrate sheet attached with the long arm.
The length of each short arm of the thirty-shaped insulating base sheet is equal to one half of the length of each side of the first insulating substrate sheet attached with the short arm, and the length of each long arm of the thirty-shaped insulating base sheet is equal to the length of each side of the first insulating substrate sheet attached with the long arm.
The invention adopts a plurality of first insulating substrate substrates and second insulating substrate substrates which are mutually embedded and jointed to form a large-size insulating substrate, and are bonded with an upper metal layer and a lower metal layer to form an insulating substrate base plate, wherein the side surfaces of the insulating substrate substrates are only mutually and tightly jointed but not mutually and fixedly connected, the first insulating substrate substrates adopt insulating materials with conventional heat conductivity and low cost, and the second insulating substrate substrates adopt insulating materials with high heat conductivity. When the composite insulating substrate base plate is applied to an IGBT power module bearing larger heat load and power load, compared with a single large-size insulating substrate base plate, the composite insulating substrate base plate can effectively release stress generated in the insulating base plate due to the heat load and the power load, avoids the warpage or the fracture of a substrate due to the heat stress, avoids the deterioration and the failure of the performance of a device due to the action of the substrate on a welding layer and a chip, provides an effective heat dissipation channel, reduces the junction temperature of the device and the influence of the junction temperature on the device, and can be applied to the large-size and high-power IGBT or power module.
Drawings
Figure 1 is a general structural schematic diagram of the package structure of the present invention,
figure 2 is a schematic diagram of a square insulating substrate structure of the present invention,
figure 3 is a top view of a square insulating substrate base plate structure of the present invention,
figure 4 is a side view of a square insulating substrate base plate structure of the present invention,
FIG. 5 is a schematic view of a rectangular insulating substrate structure of the present invention,
figure 6 is a top view of a rectangular insulating substrate base plate structure of the present invention,
FIG. 7 is a side view of a rectangular insulating substrate base plate structure of the present invention;
in the figure, 1 is a base plate, 2 is an insulating substrate base plate, 21 is an upper metal layer, 221 is a first insulating substrate base plate, 222 is a second insulating substrate base plate, 2221 is a first cross-shaped insulating base plate, 2222 is a twenty-shaped insulating base plate, 2223 is a thirty-shaped insulating base plate, 23 is a lower metal layer, 3 is an insulating substrate base plate solder layer, 4 is a chip solder layer, and 5 is a chip.
Detailed Description
As shown in fig. 1-7, the invention relates to a low-stress high-thermal-conductivity IGBT power module packaging structure, which comprises a base plate 1, an insulating substrate base plate 2 and a chip 5 which are sequentially bonded from bottom to top;
the upper metal layer 21 and the lower metal layer 23 are respectively bonded with the upper top surface and the lower bottom surface of the insulating substrate, that is, the upper top surface of each first insulating substrate chip 221 and the upper top surface of each second insulating substrate chip 222 of the insulating substrate are respectively bonded with the lower bottom surface of the upper metal layer 21, and the lower bottom surface of each first insulating substrate chip 221 and the lower bottom surface of each second insulating substrate chip 222 of the insulating substrate are respectively bonded with the upper top surface of the lower metal layer 23;
the insulating substrate base plate 2 comprises an upper metal layer 21, an insulating substrate and a lower metal layer 23 which are sequentially bonded from top to bottom;
the insulating substrate comprises a plurality of first insulating substrate wafers 221 and second insulating substrate wafers 222;
the plurality of first insulating substrate pieces 221 are rectangular structures and are uniformly arranged at intervals along the transverse direction and the longitudinal direction in the same plane (gaps with equal width are arranged among the first insulating substrate pieces 221); embedding a certain number of second insulating substrate pieces 222 of three basic configurations with a certain number of first insulating substrate pieces 221 to form a large-sized insulating substrate; the first insulating substrate pieces 221 are pieces with the simplest shape and the most convenient rectangular (square or rectangular) configuration, a plurality of first insulating substrate pieces 221 are uniformly distributed in the same plane along the transverse direction and the longitudinal direction, and each first insulating substrate piece 221 is provided with a gap with the same width; the rectangular or square first insulating substrate piece 221 is simple in structure and easy to manufacture, and can be easily combined with the second insulating substrate piece 222 of the three basic configurations to form a conventional rectangular or square insulating substrate, which is inconvenient or difficult to achieve by a circular or other special-shaped substrate piece.
The second insulating substrate pieces 222 are embedded between the four adjacent first insulating substrate pieces 221, and are attached to the side surfaces thereof.
The present invention adopts a plurality of rectangular first insulating substrate bases 221 and three basic cross second insulating substrate bases 222 to be mutually crossed and embedded to form a large-sized insulating substrate base, the side surfaces of the respective bases are mutually jointed, the respective bases are mutually engaged due to the friction force between the side surfaces, and after the insulating substrate is bonded with the upper metal layer 21 and the lower metal layer 23, the insulating substrate is compressed and tightly jointed at normal temperature due to the high thermal expansion coefficient of the conventional copper material used as the upper metal layer 21 and the lower metal layer 23, so that the mechanical strength of the insulating substrate and the insulating substrate base plate 2 can be increased.
The use of the second insulating substrate wafer 222 to embed the first insulating substrate wafer 221 can obtain the following advantages:
1. providing a heat dissipation channel, wherein the second insulating substrate is made of an insulating material with high heat conductivity coefficient such as aluminum nitride;
2. the substrates which are mutually crossed and embedded and are attached to the side surfaces are mutually engaged due to friction force, so that the mechanical strength of the insulating substrate is improved;
3. the large-sized substrate formed by embedding and attaching a plurality of substrates is easy to release stress strain generated by thermal load or power load compared with a single large-sized insulating substrate.
Preferably, the second insulating substrate 222 has a cross-shaped structure.
In a further development, said second insulating substrate sheet 222 comprises a first cross-shaped insulating substrate sheet 2221;
the first cross-shaped insulating base 2221 includes four short arms (extending to a portion between two first insulating substrate bases 221) of equal length, and is embedded in the middle of the insulating substrate, i.e., in the gap between the junctions of the four first insulating substrate bases 221, as shown in fig. 2 and 5, which is the middle portion.
Further expanding, the structure also comprises a plurality of twenty-shaped insulating substrates 2222;
the said twentieth shaped insulating substrate 2222 is located at the side of the first cross shaped insulating substrate 2221, and comprises three short arms and one long arm of equal length;
the long arm of the second cross-shaped insulating base sheet 2222 is embedded between the adjacent first cross-shaped insulating base sheets 2221 having one side close to the edge, that is, one long arm of the second cross-shaped insulating base sheet 2222 extends toward the outer edge of the insulating substrate. As shown in fig. 2 and 5, the twenty-second insulating substrate 2222 is provided with a total of 8 in the upper, lower, left, and right directions, respectively on both sides of the first cross-shaped insulating substrate 2221.
Further expanding, the structure also comprises a plurality of thirty-third insulating substrates 2223;
the plurality of thirty-third insulating base pieces 2223 are respectively located at four corners of the insulating substrate and embedded in the space between the four first insulating substrate pieces 221;
the thirty-fourth insulating substrate 2223 comprises two short arms having the same length and two long arms having the same length;
the two long arms of the thirty-third insulating base 2223 extend in the direction of the outer edge of the insulating substrate.
Further preferably, the thickness of the first insulating substrate piece 221 is the same as that of the second insulating substrate piece 222, and the side of the second insulating substrate piece 222 is attached to the side of the adjacent first insulating substrate piece 221.
Further preferably, the top and bottom surfaces of the first insulating substrate wafer 221 and the second insulating substrate wafer 222 are in the same plane, respectively. That is, the upper top surface of each second insulating substrate piece 222 is flush with the upper top surface of the first insulating substrate piece 221, and the lower bottom surface of each second insulating substrate piece 222 is flush with the lower bottom surface of the first insulating substrate piece 221.
Further preferably, the lengths of the four short arms of the first cross-shaped insulating base 2221 are equal to one half of the side length of the first insulating substrate 221 to which the first cross-shaped insulating base is attached, so that the second insulating substrates 222 embedded between the first insulating substrates 221 can be unified into three basic configurations of base, and the base has a simple configuration, is easy and convenient to prepare, can realize modularization, and is easy to expand.
Preferably, the length of the three short arms of the second cross-shaped insulating substrate 2222 is equal to one half of the side length of the first insulating substrate 221 to which it is attached;
one long arm of the second cross-shaped insulating base sheet 2222 has a length equal to the side length of the first insulating base sheet 221 to which it is attached.
Preferably, the length of the two short arms of the insulating substrate 2223 shaped like the thirty-third letter is equal to one half of the side length of the first insulating substrate 221 attached thereto, and the length of the two long arms of the insulating substrate 2223 shaped like the thirty-third letter is equal to the side length of the first insulating substrate 221 attached thereto.
The second insulating substrate pieces 222 of the above three basic configurations are respectively embedded between the adjacent first insulating substrate pieces 221 at the corresponding positions of the insulating substrates, wherein the first cross-shaped insulating substrate pieces 2221 are respectively embedded between the adjacent first insulating substrate pieces 221 at the middle of the insulating substrates, the second cross-shaped insulating substrate pieces 2222 are respectively embedded between the adjacent first insulating substrate pieces 221 at the side of the insulating substrates, and the third cross-shaped insulating substrate pieces 2223 are respectively embedded between the adjacent first insulating substrate pieces 221 at the four corners of the insulating substrates. The invention adopts four kinds of basic configuration insulating substrate base pieces to be mutually embedded, jointed and combined into a large-size rectangular (square or rectangular) insulating substrate, the insulating substrates with different sizes are formed by embedding a corresponding number of first insulating substrate base pieces 221 with a corresponding number of second insulating substrate base pieces 222 with three kinds of basic configuration, and the invention has the advantages of modularization, expandability, simple base piece configuration, simple and convenient preparation and the like.
In this case, the upper metal layer 21 and the lower metal layer 23 are square or rectangular metal foils having the same size as the first insulating substrate 221, and the outer edge of the insulating substrate in the insulating substrate base plate 2 is flush with the outer edge of the upper metal layer 21 and the outer edge of the lower metal layer 23.
The first insulating substrate 221, which is a main body of the insulating substrate structure, is made of an alumina material, and has a low cost although it has a poor thermal conductivity. The second insulating substrate pieces 222 embedded between the first insulating substrate pieces 221 adopt high thermal conductivity aluminum nitride or silicon nitride material as a thermal conduction channel, so that the heat dissipation effect of the insulating substrate base plate 2 is improved, the junction temperature of the device and the influence of the junction temperature on the device characteristics are reduced, although the cost is higher, the influence on the overall cost is limited because the area occupation ratio is smaller.
A preparation method of a low-stress high-heat-conductivity IGBT power module packaging structure comprises the following steps:
1) preparing a plurality of first insulating substrate pieces 221 having a rectangular structure (including a square or a rectangle);
2) preparing a plurality of second cross-shaped insulating substrate pieces 222 (including a plurality of first cross-shaped insulating substrate pieces 2221, a plurality of second cross-shaped insulating substrate pieces 2222 and a plurality of third cross-shaped insulating substrate pieces);
3) thin oxide films are respectively generated on the bottom surface of the upper metal layer 21 and the top surface of the lower metal layer 23;
4) first insulating substrate pieces 221 are uniformly arranged on the top surface of the lower metal layer 23 on which the thin oxide film is generated at intervals along the transverse direction and the longitudinal direction;
5) embedding a second insulating substrate wafer 222 in the intersection gap of every four first insulating substrate wafers 221;
5.1) the first cross-shaped insulating base sheet 2221 is embedded in the gap at the intersection of the four first insulating substrate sheets 221 positioned in the middle of the insulating substrate;
5.2) the second cross-shaped insulating base sheet 2222 is embedded in the gap at the intersection of the four first insulating substrate sheets 221 positioned at the four sides of the insulating substrate;
one long arm of the second cross-shaped insulating substrate 2222 extends in the direction of the outer edge of the insulating substrate;
5.3) the thirty-third insulating base 2223 is embedded in the gap at the intersection of the four first insulating substrate bases 221 positioned at the four corners of the insulating substrate;
two long arms of the thirty-first insulating substrate 2223 extend in the direction of the outer edge of the insulating substrate;
the side of the first cross-shaped insulating substrate 2221 is attached to the side of the adjacent second cross-shaped insulating substrate 2222, and the side of the second cross-shaped insulating substrate 2222 is attached to the side of the adjacent second cross-shaped insulating substrate 2223;
6) covering the upper metal layer 21, attaching the bottom surface of the upper metal layer to the top surface of each insulating substrate, and aligning the outer edges of the insulating substrate, the upper metal layer 21 and the lower metal layer 23;
7) placing the structure into a reaction furnace, heating to 1066-1078 ℃, keeping for 45-60 min, and gradually cooling to room temperature to obtain an insulating substrate base plate 2;
8) bonding the chip 5 with the metallized back surface on the top surface of the insulating substrate base plate 2 through a chip solder layer 3;
9) and bonding the insulating substrate base plate 2 in the structure after the step 8) is finished on the top surface of the base plate 1 through the insulating substrate base plate solder layer 4.
In this case, the first insulating substrate material is silicon oxide, the second insulating substrate material is aluminum nitride or silicon nitride, and the upper metal layer 21, the lower metal layer 23, and the substrate 1 are made of copper.
The insulating substrate made of the conventional thermal conductivity insulating material and the composite insulating substrate made of the high thermal conductivity insulating material are embedded to overcome the problems that when an IGBT power module bears larger thermal load and power load, the insulating substrate made of the conventional insulating material has poor heat dissipation effect, the substrate of the conventional single substrate is warped or broken due to thermal stress, and the performance of a device is degraded and failed due to the substrate warping or breaking.
The insulating substrate comprises a plurality of first insulating substrates which are uniformly arranged, a second insulating substrate is embedded between the first insulating substrates, the insulating substrates are attached in a lateral direction to form a composite insulating substrate with a larger size and a high heat conduction channel, the upper top surface and the lower bottom surface of the insulating substrate are respectively bonded with an upper metal layer 21 and a lower metal layer 23 to form an insulating substrate base plate 2 with a larger size, the insulating substrate base plate 2 is bonded with a base plate through an insulating substrate base plate solder layer 3, and the chip 5 is bonded with the insulating substrate base plate 2 through a chip solder layer 4 to form a low-stress high heat conduction GBT power module packaging structure. When the IGBT power module bears larger thermal load and power load, compared with a single large-size insulating substrate, the substrate warp or fracture caused by thermal stress can cause device failure, meanwhile, the second insulating substrate provides an effective heat dissipation channel, the junction temperature of the device and the influence of the junction temperature on the device characteristics are reduced, and the IGBT power module can be applied to large-size and high-power IGBT devices or power modules.
Claims (10)
1. A low-stress high-heat-conductivity IGBT power module packaging structure comprises a base plate, an insulating substrate base plate and a chip which are sequentially bonded from bottom to top;
the insulating substrate base plate comprises an upper metal layer, an insulating substrate and a lower metal layer which are sequentially bonded from top to bottom;
the insulating substrate comprises a plurality of first insulating substrate substrates and second insulating substrate substrates;
the first insulating substrate substrates are respectively in a rectangular structure and are uniformly distributed at intervals;
the second insulating substrate base sheet is embedded between the adjacent first insulating substrate base sheets, and the side surfaces of the second insulating substrate base sheets are attached.
2. The IGBT power module package structure of claim 1, wherein the second insulating substrate is a cross-shaped structure.
3. The IGBT power module packaging structure with low stress and high thermal conductivity of claim 1 or 2, wherein the second insulating substrate comprises a plurality of first cross-shaped insulating substrates;
the first cross-shaped insulating substrate comprises four short arms which are embedded in the middle of the insulating substrate and are positioned between the adjacent first insulating substrate substrates.
4. The IGBT power module packaging structure with low stress and high thermal conductivity of claim 3, further comprising a plurality of second-cross-shaped insulating substrates;
the second cross-shaped insulating substrate comprises three short arms and a long arm, is embedded in the side part of the insulating substrate and is positioned between the adjacent first insulating substrate;
the long arm of the second cross-shaped insulating substrate extends to the outer edge of the insulating substrate.
5. The IGBT power module packaging structure with low stress and high thermal conductivity of claim 3, further comprising four insulating substrates shaped like a cross;
the thirty-first insulating substrate is embedded among the four first insulating substrate substrates at four corners of the insulating substrate, and the two long arms of the thirty-first insulating substrate extend to the outer edge of the insulating substrate.
6. The IGBT power module package structure with low stress and high thermal conductivity of claim 1, wherein the thickness of the first insulating substrate is the same as the thickness of the second insulating substrate.
7. The IGBT power module packaging structure with low stress and high thermal conductivity of claim 1, wherein the top surface and the bottom surface of the first insulating substrate and the second insulating substrate are respectively in the same plane.
8. The IGBT power module packaging structure with low stress and high thermal conductivity of claim 3, wherein the length of each short arm of the first cross-shaped insulating substrate is equal to half of the length of each side of the first insulating substrate attached with the first cross-shaped insulating substrate.
9. The IGBT power module packaging structure with low stress and high thermal conductivity according to claim 4, wherein the length of each short arm of the second cross-shaped insulating substrate is equal to one half of the length of each edge of the first insulating substrate attached to the second cross-shaped insulating substrate;
the length of one long arm of the second cross-shaped insulating substrate sheet is equal to the length of the edge of the first insulating substrate sheet attached with the long arm.
10. The IGBT power module packaging structure with low stress and high thermal conductivity according to claim 5, wherein the length of each short arm of the insulating substrate in the shape of the thirty-third letter is equal to half of the length of each side of the first insulating substrate attached to the short arm, and the length of each long arm of the insulating substrate in the shape of the thirty-third letter is equal to the length of each side of the first insulating substrate attached to the long arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111501398.3A CN114242664A (en) | 2021-12-09 | 2021-12-09 | Low-stress high-heat-conduction IGBT power module packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111501398.3A CN114242664A (en) | 2021-12-09 | 2021-12-09 | Low-stress high-heat-conduction IGBT power module packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114242664A true CN114242664A (en) | 2022-03-25 |
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| CN202111501398.3A Pending CN114242664A (en) | 2021-12-09 | 2021-12-09 | Low-stress high-heat-conduction IGBT power module packaging structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115799247A (en) * | 2023-02-08 | 2023-03-14 | 广东仁懋电子有限公司 | IGBT device and IGBT module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115799247A (en) * | 2023-02-08 | 2023-03-14 | 广东仁懋电子有限公司 | IGBT device and IGBT module |
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