CN114232084B - Susceptor support structure and epitaxial growth apparatus - Google Patents
Susceptor support structure and epitaxial growth apparatus Download PDFInfo
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- CN114232084B CN114232084B CN202111587730.2A CN202111587730A CN114232084B CN 114232084 B CN114232084 B CN 114232084B CN 202111587730 A CN202111587730 A CN 202111587730A CN 114232084 B CN114232084 B CN 114232084B
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- base
- support shaft
- main support
- susceptor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a susceptor support structure for supporting a susceptor in an epitaxial growth apparatus, the susceptor support structure comprising a main support shaft and a plurality of support arms extending outwardly from the main support shaft, the main support shaft comprising a first portion and a second portion along its extension, the plurality of support arms being disposed on the first portion, the first portion having a weight less than a weight of the second portion. The invention also relates to an epitaxial growth device. The main support shaft is divided into a first part and a second part along the extending direction of the main support shaft, a plurality of support arms are arranged on the first part, and when the base is supported, the first part is arranged close to the base.
Description
Technical Field
The invention relates to the technical field of epitaxial growth of silicon wafers, in particular to a base supporting structure and an epitaxial growth device.
Background
The epitaxial growth process of silicon chip is one important process for semiconductor chip manufacture, and is one method of re-growing one layer of silicon monocrystal with resistivity, controllable thickness and no COP (crystal originated pit) oxygen-free deposition on polished wafer as substrate, and the method includes mainly vacuum epitaxial deposition, vapor phase epitaxial deposition, liquid phase epitaxial deposition, etc. Among them, deposition by vapor phase epitaxy is most widely used. Under a high-temperature environment, silicon source gas reacts with hydrogen to generate monocrystalline silicon and deposit on the surface of the silicon wafer to obtain an epitaxial layer, and meanwhile, a doping agent (B2H 6 or PH 3) is introduced to dope the epitaxial layer to obtain the required resistivity.
In general, the epitaxial growth device comprises a reaction chamber formed by surrounding an upper quartz bell jar and a lower quartz bell jar, wherein a base for bearing a silicon wafer is arranged in the reaction chamber, and a base support rod for supporting the base is arranged in the reaction chamber, wherein the base support rod plays a role in fixing the base and driving the base to rotate so that epitaxial growth can be uniformly performed on the base. And a heating bulb which is responsible for providing reaction energy is arranged outside the quartz bell jar, and heat is provided for the reaction in a heat radiation mode.
Because the gas enters the chamber in a single direction during the epitaxial growth process, the silicon wafer needs to rotate during the growth process to ensure uniform growth. The silicon wafer is placed above the base, and the base is supported and driven to rotate by the base support rod. In the epitaxial growth process, the gravity center of the whole of the base support rod and the base is very high, so that the problem of offset is likely to occur in the rotation process, and in the epitaxial growth process, the base support rod is offset to cause synchronous displacement of the base carried by the base support rod and the silicon wafer, so that the thickness of the epitaxial layer is uneven.
Disclosure of Invention
In order to solve the technical problems, the invention provides a pedestal supporting structure and an epitaxial growth device, which solve the problem of uneven thickness of an epitaxial layer caused by pedestal deflection.
In order to achieve the above purpose, the technical scheme adopted by the embodiment of the invention is as follows: a susceptor support structure for supporting a susceptor in an epitaxial growth apparatus, the susceptor support structure comprising a main support shaft and a plurality of support arms extending outwardly from the main support shaft, the main support shaft comprising a first portion and a second portion along its extension, the plurality of support arms being disposed on the first portion, the first portion having a weight less than a weight of the second portion.
Optionally, the first portion is a hollow structure, and the second portion is a solid structure.
Optionally, the length of the first portion and the second portion is the same in the extending direction of the main support shaft.
Optionally, a plurality of the support arms extend radially outwardly from the main support shaft and extend away from the second portion, and an angle between each of the support arms and the radial direction of the main support shaft is within a first threshold range.
Optionally, the first threshold range is 0-30 degrees.
Optionally, a plurality of the support arms extend radially outward from the main support shaft and extend in a direction approaching the second portion, and an included angle between each of the support arms and the radial direction of the main support shaft is within a second threshold range.
Optionally, the second threshold range is 0-60 degrees.
Optionally, the plurality of support arms are uniformly arranged on the outer peripheral surface of the main support shaft.
Optionally, the device comprises 3 supporting arms, and an included angle between two adjacent supporting arms is 120 degrees.
The embodiment of the invention also provides an epitaxial growth device, which comprises:
a reaction chamber formed by surrounding two quartz bell-jars which are oppositely arranged;
the base is positioned in the reaction chamber and used for bearing the silicon wafer;
a heating structure for providing heat to the reaction chamber;
the base support structure is described above.
The beneficial effects of the invention are as follows: the main support shaft is divided into a first part and a second part along the extending direction of the main support shaft, a plurality of support arms are arranged on the first part, and when the base is supported, the first part is arranged close to the base.
Drawings
Fig. 1 is a schematic view showing a structure of an epitaxial growth apparatus in the related art;
FIG. 2 is a schematic diagram showing an epitaxial growth apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of a base support structure according to an embodiment of the present invention;
FIG. 4 is a graph showing the thickness variation of the epitaxial layer after the susceptor is shifted;
fig. 5 shows a schematic structural diagram of an epitaxial growth apparatus according to an embodiment of the present invention.
1, a main supporting shaft; 2, supporting a arm; 3, a base; 4, preheating a ring; 5 heating the structure; 6, a first quartz bell jar; 7, a second quartz bell jar; 8, lifting shafts; 9 lifting arms; a reaction chamber; 11 lifting pins; 101 a first part; 102 a second portion.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, the epitaxial growth apparatus includes a reaction chamber 10 formed by surrounding an upper quartz bell jar and a lower quartz bell jar, a susceptor 3 for carrying a silicon wafer is disposed in the reaction chamber 10, and a preheating ring 4 surrounding the periphery of the susceptor 3, the preheating ring 4 and the susceptor 3 are disposed at intervals, and a susceptor 3 support rod for supporting the susceptor 3, wherein the susceptor 3 support rod serves to fix the susceptor 3 and drive the susceptor 3 to rotate, so that epitaxial growth can be uniformly performed on the substrate.
Because the gas enters the chamber in a single direction during the epitaxial growth process, the silicon wafer needs to rotate during the growth process to ensure uniform growth. The silicon chip is placed above the base 3, and the base 3 is supported and driven to rotate by the support rod of the base 3. In the epitaxial growth process, the gravity center of the whole body of the pedestal 3 supporting rod and the pedestal 3 is very high, so that the problem of offset is likely to occur in the rotation process, and in the epitaxial growth process, the pedestal 3 supporting rod is offset to cause synchronous displacement of the pedestal 3 and the silicon wafer carried by the pedestal 3 supporting rod, so that the thickness of an epitaxial layer is uneven. In particular, the edge of the susceptor 3 has a first position and a second position opposite to each other, the line between the first position and the second position passing through the center of the susceptor 3 and extending in the radial direction of the susceptor 3, the distance between the susceptor 3 and the preheat ring 4 being a, and the distance between the susceptor 3 and the preheat ring 4 being b, and the thickness of the portion of the epitaxial layer close to the first position being reduced due to the offset of the susceptor 3, a > b, the thickness of the portion of the epitaxial layer close to the second position being increased, the thickness of the portion of the epitaxial layer close to the first position being increased, and the thickness of the portion of the epitaxial layer close to the second position being decreased, i.e., the offset of the susceptor 3 being such that the overall epitaxial layer thickness deviates from a normal value, eventually resulting in the deterioration of the flatness of the epitaxial layer shown in 4 (fig. 4 being a measure of the flatness of the SFQR (silicon wafer), the lower value representing a better flatness of the silicon wafer).
Referring to fig. 2 and 3, in view of the above problems, the present embodiment provides a susceptor 3 supporting structure for supporting a susceptor 3 in an epitaxial growth apparatus, the susceptor 3 supporting structure including a main supporting shaft 1, and a plurality of supporting arms 2 extending outwardly from the main supporting shaft 1, the main supporting shaft 1 including a first portion 101 and a second portion 102 along an extending direction thereof, a plurality of the supporting arms 2 being disposed on the first portion 101, the first portion 101 having a weight smaller than that of the second portion 102.
When the first portion 101 is used for supporting the base 3, the second portion 102 is disposed close to the base 3, and the second portion 102 is disposed far away from the base 3, in this embodiment, the main support shaft 1 is disposed such that the weight of the first portion 101 is smaller than that of the second portion 102, and the center of gravity of the main support shaft 1 is moved down, so that the offset caused by the higher center of gravity is improved, and the uniformity of the epitaxial layer is improved.
In order to move the center of gravity away from the first portion 101, that is, move the center of gravity of the main support shaft 1 away from the base 3, in the extending direction of the main support shaft 1, the length of the first portion 101 is greater than one third of the length of the main support shaft 1, and in some implementations of this embodiment, in the extending direction of the main support shaft 1, the lengths of the first portion 101 and the second portion 102 are the same, that is, in the extending direction of the main support shaft 1, the length of the first portion 101 is one half of the length of the main support shaft 1, but not limited thereto.
In order to make the weight of the first portion 101 smaller than that of the second portion 102, the specific structure of the main supporting shaft 1 may be various, for example, a plurality of through holes or grooves are formed on the outer peripheral surface of the first portion 101, the second portion 102 is of a solid structure, or the first portion 101 is of a hollow structure, a plurality of through holes or grooves are formed on the outer peripheral surface of the second portion 102, in some implementations of this embodiment, the first portion 101 is of a hollow structure, the second portion 102 is of a solid structure, and the weight difference between the first portion 101 and the second portion 102 is increased, so that the center of the main supporting shaft 1 is ensured to be far away from the base 3.
In a specific implementation manner of this embodiment, in the extending direction of the main supporting shaft 1, the length of the first portion 101 is the same as the length of the second portion 102, the first portion 101 is a hollow structure, and the second portion 102 is a solid structure, so as to solve the problem of the offset of the base 3.
In this embodiment, a plurality of the support arms 2 extend radially outwardly from the main support shaft 1 and extend away from the second portion 102, and the angle between each of the support arms 2 and the radial direction of the main support shaft 1 is within a first threshold range.
In the conventional art, the angle between the supporting arm 2 and the radial direction of the main supporting shaft 1 is larger, which is one of the reasons for causing the deflection of the base 3, and compared with fig. 1 and 2, the angle between the supporting arm 2 and the radial direction of the main supporting shaft 1 is reduced from a to b in the present embodiment, and the angle between the supporting arm 2 and the radial direction of the main supporting shaft 1 is reduced in the present embodiment, so as to improve the deflection of the base 3.
In some implementations of this embodiment, the first threshold range is 0-30 degrees, for example, the angle between the support arm 2 and the radial direction of the main support shaft 1 may be 0 degrees, 15 degrees, or 20 degrees (in the related art, the angle between the support arm 2 and the radial direction of the main support shaft 1 is generally greater than 30 degrees).
In this embodiment, a plurality of the support arms 2 extend radially outward from the main support shaft 1 and extend in a direction approaching the second portion 102, and an angle between each of the support arms 2 and the radial direction of the main support shaft 1 is within a second threshold range.
The supporting arm 2 may extend away from the second portion 102, or may extend toward the second portion 102, that is, if the base 3 is located above the main supporting shaft 1, the supporting arm 2 may extend obliquely upward or obliquely downward, so long as the center of gravity of the supporting structure of the base 3 is moved downward, so as to solve the problem of offset of the base 3.
In some implementations of this embodiment, the second threshold range is 0-60 degrees, for example, the included angle b between the support arm 2 and the radial direction of the main support shaft 1 may be 0 degrees, 30 degrees, 45 degrees or 60 degrees, referring to fig. 5.
In the present embodiment, a plurality of the support arms 2 are uniformly provided on the outer peripheral surface of the main support shaft 1.
The support arms 2 are uniformly arranged on the outer peripheral surface of the main support shaft 1, so that the stress uniformity of the base 3 in the rotating process is facilitated, and the base 3 is prevented from being deviated.
It should be noted that the number of the supporting arms 2 may be set according to actual needs, and in some implementations of this embodiment, the supporting structure of the base 3 includes 3 supporting arms 2, and an included angle between two adjacent supporting arms 2 is 120 degrees, but is not limited thereto.
The embodiment of the invention also provides an epitaxial growth device, which comprises:
a reaction chamber 10 formed by surrounding two quartz bell-jars arranged oppositely;
a base 3, which is positioned in the reaction chamber 10 and is used for bearing a silicon wafer;
a heating structure 5 for providing heat to the reaction chamber 10;
and the base 3 support structure described above.
Specifically, the epitaxial growth device comprises a first quartz bell jar 6 and a second quartz bell jar 7, the first quartz bell jar 6 and the second quartz bell jar 7 are surrounded into a whole through a mounting piece to form a reaction chamber 10, one side of the reaction chamber 10 is provided with an air inlet, the other side of the reaction chamber 10 is provided with an air outlet, a flat plate structure of the base 3 is arranged in the reaction chamber 10, a preheating ring 4 is arranged around the base 3, a gap is reserved between the preheating ring and the base 3, and a gas channel is arranged on one side, close to the first quartz bell jar 6, of the preheating ring 4 and is used for supporting the base 3, and a support structure of the base 3 is arranged close to the second quartz bell jar 7.
The main support shaft 1 is far away from one side of the base 3 and is further provided with a lifting shaft 8, one end of the lifting shaft 8 is provided with a plurality of lifting arms 9, the lifting arms 9 extend outwards from the lifting shaft 8 along the radial direction of the lifting shaft and extend towards the direction close to the base 3, the base 3 is provided with a through hole, a plurality of lifting pins 11 are arranged in the through hole, the lifting pins 11 are in one-to-one correspondence with the supporting arms 2, each lifting pin 11 penetrates through the corresponding through hole in the supporting arm 2 and is provided with a groove, one end of the lifting arm 9 away from the lifting shaft 8 is provided with a plug-in part which can be plugged in the groove, and the lifting shaft 8 moves towards the direction close to the base 3 so as to drive the lifting pins 11 to lift, and the silicon wafer supported on the base 3 is lifted.
The quartz bell jar is also provided with a heating structure 5 on the outside, and the heating structure 5 can be a plurality of halogen lamps to provide heat.
The epitaxial growth method is described as follows:
turning on the plurality of halogen lamps to raise the temperature of the reaction chamber 10 to 1100-1150 ℃, and delivering a silicon source gas into the upper reaction chamber 10 through the gas inlet to grow an epitaxial layer on a silicon wafer;
the silicon source gas passes through the front surface of the silicon wafer from the upper reaction chamber 10 (the chamber between the susceptor 3 and the first quartz bell jar 6), and diffuses to the back surface of the silicon wafer and is discharged from the gap G of the reaction chamber 10 into the lower reaction chamber 10 (the chamber between the susceptor 3 and the second quartz bell jar 7) so that the thickness of the epitaxial layer grown on the silicon wafer is uniform; reaction tails including silicon source gas exhausted to the lower reaction chamber 10 are discharged through the exhaust port
The gas exits the reaction chamber 10.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (10)
1. A susceptor support structure for supporting a susceptor in an epitaxial growth apparatus, the susceptor support structure comprising a main support shaft and a plurality of support arms extending outwardly from the main support shaft, characterized in that the main support shaft comprises a first portion and a second portion along its extending direction, a plurality of the support arms being disposed on the first portion, the first portion having a weight less than a weight of the second portion;
the length of the first portion is greater than one third of the main support shaft in the extending direction of the main support shaft.
2. The base support structure of claim 1, wherein the first portion is a hollow structure and the second portion is a solid structure.
3. The base support structure of claim 1, wherein the first portion and the second portion are the same length in the direction of extension of the main support shaft.
4. The base support structure of claim 1 wherein a plurality of said support arms extend radially outwardly from said main support shaft and extend away from said second portion, each said support arm being disposed at an angle to the radial direction of said main support shaft within a first threshold range.
5. The base support structure of claim 4 wherein the first threshold range is 0-30 degrees.
6. The base support structure of claim 1 wherein a plurality of said support arms extend radially outwardly from said main support shaft and extend in a direction proximate said second portion, each said support arm being within a second threshold angle from the radial direction of said main support shaft.
7. The base support structure of claim 6 wherein the second threshold range is 0-60 degrees.
8. The base support structure according to claim 1, wherein a plurality of the support arms are uniformly provided on an outer peripheral surface of the main support shaft.
9. The base support structure of claim 8 comprising 3 support arms, wherein an angle between two adjacent support arms is 120 degrees.
10. An epitaxial growth apparatus, comprising:
a reaction chamber formed by surrounding two quartz bell-jars which are oppositely arranged;
the base is positioned in the reaction chamber and used for bearing the silicon wafer;
a heating structure for providing heat to the reaction chamber;
and the base support structure of any one of claims 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111587730.2A CN114232084B (en) | 2021-12-23 | 2021-12-23 | Susceptor support structure and epitaxial growth apparatus |
| TW111129457A TWI837758B (en) | 2021-12-23 | 2022-08-05 | Base support structure and epitaxial growth device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111587730.2A CN114232084B (en) | 2021-12-23 | 2021-12-23 | Susceptor support structure and epitaxial growth apparatus |
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| CN114232084A CN114232084A (en) | 2022-03-25 |
| CN114232084B true CN114232084B (en) | 2023-06-06 |
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| JP3076791B2 (en) * | 1998-10-19 | 2000-08-14 | アプライド マテリアルズ インコーポレイテッド | Semiconductor manufacturing equipment |
| US6971835B2 (en) * | 2001-12-21 | 2005-12-06 | Sumitomo Mitsubishi Silicon Corporation | Vapor-phase epitaxial growth method |
| JP6435992B2 (en) * | 2015-05-29 | 2018-12-12 | 株式会社Sumco | Epitaxial growth apparatus, epitaxial wafer manufacturing method, and lift pin for epitaxial growth apparatus |
| CN111304740A (en) * | 2018-12-11 | 2020-06-19 | 西安奕斯伟硅片技术有限公司 | Epitaxial growth device and manufacturing method thereof |
| CN112501594A (en) * | 2020-12-16 | 2021-03-16 | 西安奕斯伟硅片技术有限公司 | System and method for automatically adjusting the position of a susceptor relative to a preheat ring in an epitaxial furnace |
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| TW202246596A (en) | 2022-12-01 |
| CN114232084A (en) | 2022-03-25 |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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