CN114225849A - Silicon particle production device and method - Google Patents
Silicon particle production device and method Download PDFInfo
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- CN114225849A CN114225849A CN202111511796.3A CN202111511796A CN114225849A CN 114225849 A CN114225849 A CN 114225849A CN 202111511796 A CN202111511796 A CN 202111511796A CN 114225849 A CN114225849 A CN 114225849A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1809—Controlling processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1836—Heating and cooling the reactor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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Abstract
The application discloses silicon particle production device and method belongs to the technical field of particle silicon production, and the silicon particle production device comprises a first pipeline, a heater, a second pipeline, a mixing tank, a reactor, a cooling jacket, a discharging pipe, a seed crystal tank and a heating device. The first pipeline is communicated with the second pipeline, the heater is arranged between the first pipeline and the reactor, the seed crystal tank is communicated with the reactor, and the cooling jacket is sleeved outside the reactor. According to the silicon particle production device disclosed by the invention, hydrogen, silane gas and seed crystals are heated in advance, and then the reactor is provided with the cooling jacket, so that the wall temperature of the reactor can be effectively reduced, the silane gas is decomposed to deposit and grow on the surface of the seed crystals with higher temperature, and then the silicon particle production device is discharged out of the reactor through the discharging pipe. The silicon particle production device does not need to heat the inner wall of the reactor as a heat source, and avoids partial deposition on the inner wall of the reactor in the decomposition process of the silicon-containing gas.
Description
Technical Field
The invention relates to the technical field of granular silicon production, in particular to a silicon granule production device and method.
Background
The modified siemens process and the fluidized bed process are the mainstream polysilicon production processes. The fluidized bed method has the advantages of low energy consumption, high production efficiency, continuous production and the like, and is the subject of intensive research in the industry at present. The fluidized bed method is characterized in that high-purity silicon micropowder is used as a seed crystal to form a fluidized state in a heated reactor by utilizing hydrogen, silicon-containing gas is introduced, the silicon-containing gas is subjected to thermal decomposition reaction on the surface of the heated seed crystal at a certain temperature, and granular polycrystalline silicon products are formed by continuous deposition.
When the fluidized bed method is used, the inner wall of the reactor is mainly used as a heat source to serve as the crystal seed for heating, so that part of silicon-containing gas can be deposited on the inner wall of the reactor in the decomposition process, the heat exchange efficiency of the reactor is seriously influenced after the silicon-containing gas is operated for a period of time, and the silicon-containing gas is deposited to a certain thickness and falls off due to the difference of the thermal expansion coefficients of the materials on the inner wall, so that the continuous operation of the reactor is seriously influenced.
Disclosure of Invention
The invention discloses a silicon particle production device, which aims to solve the problems.
The technical scheme adopted by the invention for solving the technical problems is as follows:
based on the above object, the present invention discloses a silicon particle production apparatus, comprising:
a first conduit through which hydrogen gas passes;
a heater, an inlet end of the heater being in communication with the first conduit;
a second pipeline for silane to pass through, wherein the second pipeline is communicated with the first pipeline, and a first distribution valve is arranged between the first pipeline and the second pipeline;
a mixing tank, the inlet end of the mixing tank being in communication with the second conduit;
the outlet end of the heater is communicated with the reactor, and the outlet end of the mixing tank is communicated with the reactor;
the cooling jacket is wrapped outside the reactor;
the feeding pipe is communicated with the bottom of the reactor;
a seed tank in communication with the reactor; and
and the heating device is used for heating the seed crystal tank and is arranged outside the seed crystal tank.
Optionally: the blanking pipe penetrates through the bottom plate, a first air inlet and a second air inlet are formed in the bottom plate, the first pipeline is communicated with the first air inlet, and the second pipeline is communicated with the second air inlet.
Optionally: the blanking pipe is located the intermediate position of bottom plate, first air inlet sets up to a plurality ofly, and is a plurality of first air inlet winds the blanking pipe is the annular setting, the second air inlet sets up to a plurality of, and is a plurality of the second air inlet winds the blanking pipe is the annular setting.
Optionally: the first air inlets are arranged in a plurality of radial directions of the bottom plate, the second air inlets are arranged in a plurality of radial directions of the bottom plate, at least one circle of the first air inlets are adjacent to the blanking pipe, and at least one circle of the first air inlets are located on the outermost side of the bottom plate.
Optionally: at least one circle of the first openings is arranged between two adjacent circles of the second openings along the radial direction of the bottom plate.
Optionally: the reactor further comprises:
the straight-cylinder reaction section is arranged along the circumferential direction of the bottom plate, and the cooling jacket is wrapped outside the straight-cylinder reaction section;
the settling plate is annular, the diameter of the settling plate is larger than that of the straight-barrel reaction section, and the settling plate is positioned at one end, away from the bottom plate, of the straight-barrel reaction section; and
the top plate is positioned at one end, away from the straight-barrel reaction section, of the settling plate.
Optionally: the reactor also comprises a first preheating heater and a second preheating heater, wherein the first preheating heater is positioned between the first pipeline and the heater, and the second preheating heater is positioned between the mixing tank and the reactor.
Optionally: the reactor is characterized by further comprising a tail gas filter and a discharge pipeline, wherein the inlet end of the tail gas filter is communicated with the reactor through the top plate, the discharge pipeline is communicated with the outlet end of the tail gas filter, and the discharge pipeline is in heat conduction connection with the first preheating heater.
Optionally: the heater heats the hydrogen to a first temperature, the second preheating heater preheats the silane to a second temperature, and the cooling jacket controls the temperature of the straight-barrel reaction section to a third temperature, wherein the first temperature is higher than the third temperature, and the third temperature is higher than the second temperature.
Based on the above purpose, the invention also discloses a silicon particle production method based on the above silicon particle production device, which comprises the following steps:
the method comprises the following steps: adjusting the first distribution valve, and then opening the heater and the cooling jacket;
step two: opening the first pipeline and the second pipeline, and throwing the seed crystal in the seed crystal tank into the reactor.
Compared with the prior art, the invention has the following beneficial effects:
the silicon particle production device disclosed by the invention can effectively reduce the wall temperature of the reactor by heating the hydrogen, the mixed silane gas and the seed crystal in advance, and heating the silane mixed gas and the seed crystal by utilizing the heated high-temperature hydrogen, and meanwhile, the reactor is provided with the cooling jacket, so that the inner wall of the reactor is not required to be used as a heat source to heat the seed crystal, the silane is prevented from being decomposed and then deposited on the inner wall of the reactor, the silane gas with higher temperature is decomposed and continuously deposited on the surface of the seed crystal and grows up, and then the silane gas is discharged out of the reactor through the discharging pipe. Meanwhile, the waste caused by the deposition of the inner wall is avoided, the silicon hydride gas can be continuously deposited into granular silicon products in the reactor after being decomposed, and the production efficiency of the polycrystalline silicon products can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 shows a schematic view of a silicon particle production apparatus disclosed in an embodiment of the present invention;
FIG. 2 shows a schematic diagram of a reactor disclosed in an embodiment of the present invention;
fig. 3 shows a schematic view of a backplane as disclosed in an embodiment of the present invention.
In the figure:
101-a first conduit; 102-a second conduit; 103-a third conduit; 104-a first dispensing valve; 105-a second dispense valve; 106-hydrogen feed valve; a 107-silane feed valve; 108-a first preheat heater; 109-a heater; 110-a reactor; 111-an exhaust gas filter; 112-a discharge conduit; 113-a mixing tank; 114-a second preheat heater; 115-seed tank; 116-a stirrer; 117-heating means; 118-a top plate; 119-a settling plate; 120-a transition plate; 121-straight barrel reaction section; 122-a backplane; 123-a blanking pipe; 124-cooling jacket; 125-connection port; 126-first air inlet; 127-second air inlet.
Detailed Description
The present invention will be described in further detail below with reference to specific embodiments and with reference to the attached drawings.
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as disclosed in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the embodiments of the present application, it should be noted that the indication of orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship which is usually placed when the product of the application is used, or the orientation or positional relationship which is usually understood by those skilled in the art, or the orientation or positional relationship which is usually placed when the product of the application is used, and is only for the convenience of describing the application and simplifying the description, but does not indicate or imply that the indicated device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, should not be construed as limiting the application. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present application, it should also be noted that, unless otherwise explicitly stated or limited, the terms "disposed," "mounted," and "connected" are to be construed broadly, and may for example be fixedly connected, detachably connected, or integrally connected; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Example (b):
referring to fig. 1 to 3, an embodiment of the present invention discloses a silicon particle production apparatus, which includes a first pipe 101, a heater 109, a second pipe 102, a mixing tank 113, a reactor 110, a cooling jacket 124, a blanking pipe 123, a seed tank 115, and a heating apparatus 117. The first pipe 101 may be in flow communication with hydrogen gas, the second pipe 102 may be in flow communication with silane, and a portion of the hydrogen gas in the first pipe 101 may flow into the second pipe 102. The hydrogen in the first pipeline 101 can enter the reactor 110 after being heated by the heater 109, and the silane mixed with the hydrogen in the second pipeline 102 is mixed with the hydrogen with higher temperature after entering the reactor 110, so that the silane starts to decompose. The seed tank 115 is used for holding seed crystals, and the seed crystals are heated by the heating device 117, enter the reactor 110, react with the mixed gas, and adsorb the decomposed silicon. The cooling jacket 124 is disposed around the peripheral wall of the reactor 110 to keep the inner wall of the reactor 110 at a lower temperature range, thereby preventing the silane gas from decomposing and depositing on the inner wall of the reactor 110.
The silicon particle production device disclosed in the embodiment heats hydrogen and seed crystals in advance, and then the reactor 110 is provided with the cooling jacket 124, so that the temperature of the wall of the reactor 110 can be effectively reduced, the silane gas is prevented from being decomposed and then deposited on the inner wall of the reactor 110, the silane gas with higher temperature is decomposed and deposited on the surface of the seed crystals and grows up, and then the silane gas is discharged out of the reactor 110 through the discharging pipe 123. The silicon particle production device does not need to heat the reactor 110, decomposed silane can not be deposited on the reactor 110, waste is avoided, decomposed silane can be continuously deposited into particle silicon products in the reactor 110, and the production efficiency of polycrystalline silicon products can be improved.
Referring to fig. 2 and 3, the reactor 110 includes a bottom plate 122, a straight tubular reaction section 121, a settling plate 119, and a top plate 118. The straight-tube reaction section 121 is arranged along the circumferential direction of the bottom plate 122, and the bottom plate 122 is wrapped in the straight-tube reaction section 121 in an annular shape. The settling plate 119 is also annular, the diameter of the settling plate 119 is larger than that of the straight-cylinder reaction section 121, and the settling plate 119 is located at one end of the straight-cylinder reaction section 121, which is far away from the bottom plate 122. A transition plate 120 is arranged between the settling plate 119 and the straight-cylinder reaction section 121, the transition plate 120 is also annular, the transition plate 120 is obliquely arranged, and the diameter of the transition plate 120 gradually increases along the direction from the straight-cylinder reaction section 121 to the settling plate 119. The minimum diameter of the transition plate 120 is equal to the diameter of the straight cylindrical reaction section 121, and the maximum diameter of the transition plate 120 is equal to the diameter of the settling plate 119. The inclined transition plate 120 is beneficial to make the seed crystal which is not deposited on the surface fall back to participate in the reaction. The top plate 118 is located at one end of the settling plate 119 facing away from the straight-barrel reaction section 121, and an exhaust port is provided on the top plate 118.
Referring to fig. 3, the bottom plate 122 has a circular cross-section, and a connection port 125, a plurality of first air inlets 126, and a plurality of second air inlets 127 are formed on the bottom plate 122. The connection port 125 is located at an intermediate position with the bottom plate 122, and the discharge pipe 123 is connected with the bottom plate 122 through the connection port 125. The plurality of first air inlets 126 are annularly arranged around the connecting port 125, and a plurality of annular first air inlets 126 are radially arranged on the bottom plate 122; the plurality of second air inlets 127 are annularly arranged around the connection port 125, and a plurality of annular second air inlets 127 are radially arranged on the bottom plate 122. At least one annular first air inlet 126 is adjacent to the connecting port 125, and at least one annular first air inlet 126 is located at the outermost side of the bottom plate 122 adjacent to the straight-tube reaction section 121. At least two annular second air inlets 127 are arranged between the outermost first air inlet 126 and the innermost first air inlet 126, and at least one annular first air inlet 126 is arranged between two adjacent second air inlets 127. The innermost first gas inlet 126 can prevent the silane gas from directly discharging from the connection port 125, and the outermost first gas inlet 126 can form a protective gas barrier on the surface of the straight reaction section 121 to prevent the decomposed substances of the silicon-containing gas from depositing on the straight reaction section 121 of the reactor.
The cooling jacket 124 is wrapped outside the straight-tube reaction section 121, and the cooling jacket 124 has a lower temperature, so that the straight-tube reaction section 121 can be cooled and matched with the first gas inlet 126 positioned at the outermost side, thereby preventing substances generated after the silicon-containing gas is decomposed from depositing on the straight-tube reaction section 121 of the reactor.
In this embodiment, the inner side of the straight reaction section 121 is provided with a lining material with good wear resistance and stain resistance, and the lining material may be one or a combination of tungsten-cobalt alloy, silicon nitride or titanium silicon nitride.
The first conduit 101 is used for hydrogen gas to flow through, and the first conduit 101 may extend to communicate with all of the first gas inlets 126, i.e. the gas entering the reactor 110 from the first gas inlets 126 is all hydrogen gas in single purity. A hydrogen feeding valve 106, a second distribution valve 105, a first preheating heater 108 and a heater 109 are sequentially provided in a direction toward the reactor 110 in the first pipe 101. The hydrogen feeding valve 106 is used for controlling the opening and closing of the first pipeline 101, the first preheating heater 108 is used for preheating the hydrogen in the first pipeline 101, the heater 109 is used for heating the hydrogen in the first pipeline 101 to a first temperature, and the hydrogen can be fed into the reactor 110 along the first gas inlet 126 after being heated to the first temperature.
The second pipeline 102 is used for supplying silane gas fluid, a third pipeline 103 used for communicating the first pipeline 101 with the second pipeline 102 is arranged between the second pipeline 102 and the first pipeline 101, a first distribution valve 104 is arranged on the third pipeline 103, and the first distribution valve 104 is matched with a second distribution valve 105 to distribute hydrogen in the first pipeline 101, so that a part of hydrogen enters the reactor 110 along the first pipeline 101, and the other part of hydrogen enters the second pipeline 102 to be mixed with silane and then enters the reactor 110. The second pipe 102 may be extended to communicate with all of the second gas inlets 127, and a silane feed valve 107, a mixing tank 113, and a second preheating heater 114 are sequentially provided in a direction of the second pipe 102 toward the reactor 110. The opening and closing of the second pipe 102 of the silane feed valve 107 and the mixing tank 113 are used for mixing the hydrogen gas and the silane gas to make the mixing of the hydrogen gas and the silane gas more uniform. The second preheating heater 114 is used to preheat the mixed gas of hydrogen and silane and to preheat the mixed gas to a second temperature, which is lower than the first temperature in the present embodiment.
The inlet end of the off-gas filter 111 is in communication with the reactor 110 via an exhaust port in the top plate 118, the exhaust conduit 112 is in communication with the outlet end of the off-gas filter 111, and the exhaust conduit 112 is in thermally conductive communication with the first preheating heater 108. The discharge pipe 112 may be connected to the first preheating heater 108 by winding or inserting, and the like, and by using these connection methods, the hydrogen gas may be preheated by using the tail gas, thereby effectively increasing the energy utilization rate.
Be provided with agitator 116 and heating device 117 on the seed crystal jar 115, agitator 116 is located seed crystal jar 115, and heating device 117 wraps up outside seed crystal jar 115, utilizes heating device 117 and agitator 116, can be more even with the seed crystal heating of solid state, and can be timely heating to the fourth temperature, and the setting of agitator 116 can avoid the seed crystal to take place to agglomerate in the heating process. After the seed crystal is heated to the fourth temperature, it may be introduced into the reactor 110 from a position near the top of the reactor 110, after which the silane gas is decomposed to deposit on the surface of the high-temperature seed crystal.
In this embodiment, the first temperature is higher than 800 degrees celsius, the second temperature is lower than 200 degrees celsius, the third temperature is lower than 300 degrees celsius, and the fourth temperature is between 600 degrees celsius and 1000 degrees celsius.
The silicon particle production apparatus disclosed in this example was operated as follows:
the method comprises the following steps: first the first and second distribution valves 104 and 105 are adjusted to adjust the ratio of the hydrogen flow along the first and second pipes 101 and 102. Then, the first preheating heater 108 is turned on, the heater 109 is turned on, the second preheating heater 114 is turned on, the heating device 117 is turned on, and the cooling jacket 124 is turned on.
Step two: then, the hydrogen feed valve 106 and the silane feed valve 107 are opened, a part of the hydrogen is preheated along the first pipeline 101, then is heated to the first temperature and enters the reactor 110 along the first gas inlet 126, and another part of the hydrogen enters the second pipeline 102 along the third pipeline 103 to be mixed with the silane, then is preheated to the second temperature by the second preheating heater 114 and enters the reactor 110 along the second gas inlet 127. The mixed gas entering the reactor 110 from the second pipe 102 is mixed with the hydrogen gas having a higher temperature entering the reactor 110 from the first pipe 101 after entering the reactor 110, and the temperature of the silane gas is further raised to reach the decomposition temperature of the silane, and the silane gas starts to decompose. At the same time, the seed crystal is heated to a fourth temperature by the heating device 117 and then fed into the reactor 110. Silane gas is deposited on the surface of the seed crystal and grows continuously, and the obtained spherical granular silicon product is collected after descending to the discharging pipe 123.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A silicon particle production apparatus characterized by comprising:
a first conduit through which hydrogen gas passes;
a heater, an inlet end of the heater being in communication with the first conduit;
a second pipeline for silane to pass through, wherein the second pipeline is communicated with the first pipeline, and a first distribution valve is arranged between the first pipeline and the second pipeline;
a mixing tank, the inlet end of the mixing tank being in communication with the second conduit;
the outlet end of the heater is communicated with the reactor, and the outlet end of the mixing tank is communicated with the reactor;
the cooling jacket is wrapped outside the reactor;
the feeding pipe is communicated with the bottom of the reactor;
a seed tank in communication with the reactor; and
and the heating device is used for heating the seed crystal tank and is arranged outside the seed crystal tank.
2. The apparatus of claim 1, wherein the reactor comprises a bottom plate, the feed pipe penetrates through the bottom plate, the bottom plate is provided with a first gas inlet and a second gas inlet, the first pipeline is communicated with the first gas inlet, and the second pipeline is communicated with the second gas inlet.
3. The apparatus for producing silicon particles according to claim 2, wherein a plurality of first air inlets are provided at an intermediate position of the bottom plate, and are arranged in a ring shape around the discharge pipe, and a plurality of second air inlets are provided in a ring shape around the discharge pipe.
4. The silicon particle production apparatus as claimed in claim 3, wherein the first air inlet is provided in plurality in a radial direction of the bottom plate, the second air inlet is provided in plurality in a radial direction of the bottom plate, at least one turn of the first air inlet is adjacent to the blanking pipe, and at least one turn of the first air inlet is located at an outermost side of the bottom plate.
5. The silicon particle production apparatus as claimed in claim 4, wherein at least one turn of the first openings is provided between two adjacent turns of the second openings in a radial direction of the bottom plate.
6. The silicon particle production apparatus according to claim 2, wherein the reactor further comprises:
the straight-cylinder reaction section is arranged along the circumferential direction of the bottom plate, and the cooling jacket is wrapped outside the straight-cylinder reaction section;
the settling plate is annular, the diameter of the settling plate is larger than that of the straight-barrel reaction section, and the settling plate is positioned at one end, away from the bottom plate, of the straight-barrel reaction section; and
the top plate is positioned at one end, away from the straight-barrel reaction section, of the settling plate.
7. The silicon particle production apparatus according to claim 1, further comprising a first preheating heater and a second preheating heater, the first preheating heater being located between the first pipe and the heater, the second preheating heater being located between the mixing tank and the reactor.
8. The silicon particle production apparatus of claim 7, further comprising a tail gas filter and an exhaust line, wherein an inlet end of the tail gas filter is in communication with the reactor through the top plate, the exhaust line is in communication with an outlet end of the tail gas filter, and the exhaust line is in thermally conductive connection with the first preheat heater.
9. The silicon particle production apparatus according to claim 1, wherein the heater heats the hydrogen gas to a first temperature, the second preheating heater preheats the silane to a second temperature, the cooling jacket controls the temperature of the straight-tube reaction section to a third temperature, the first temperature is higher than the third temperature, and the third temperature is higher than the second temperature.
10. A silicon particle production method based on the silicon particle production device is characterized by comprising the following steps:
the method comprises the following steps: adjusting the first distribution valve, and then opening the heater and the cooling jacket;
step two: opening the first pipeline and the second pipeline, and throwing the seed crystal in the seed crystal tank into the reactor.
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| CN202111511796.3A CN114225849A (en) | 2021-12-06 | 2021-12-06 | Silicon particle production device and method |
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