CN114222948A - Coating and developing device - Google Patents

Coating and developing device Download PDF

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Publication number
CN114222948A
CN114222948A CN202080056483.0A CN202080056483A CN114222948A CN 114222948 A CN114222948 A CN 114222948A CN 202080056483 A CN202080056483 A CN 202080056483A CN 114222948 A CN114222948 A CN 114222948A
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China
Prior art keywords
coating
unit
station
processing
wafer
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Pending
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CN202080056483.0A
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Chinese (zh)
Inventor
泷口靖史
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN114222948A publication Critical patent/CN114222948A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/305—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the brushing or rubbing means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3057—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the processing units other than the developing unit, e.g. washing units
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The coating and developing apparatus (1) of the present invention includes a feeding and discharging station (S1), a processing station (S4), a pre-coating cleaning unit (23), and a post-coating cleaning unit (54). The carry-in/out station includes a cassette mounting part (11) for mounting a cassette (C) containing a plurality of substrates (W). The processing station comprises: a coating processing part (COT) which performs coating processing of coating a resist on the front surface of the substrate; a developing processing unit (DEV) for supplying a developing solution to the front surface of the substrate exposed by the exposure apparatus (EXP) to perform a developing process; and heating portions (BK1, BK2) for heating the substrate. The pre-coating cleaning unit is provided between the carry-in/out station and the exposure apparatus, and physically cleans the front surface of the substrate before the coating process. The post-coating cleaning unit is provided between the processing station and the exposure apparatus, and physically cleans the back surface of the substrate after the coating process.

Description

Coating and developing device
Technical Field
The present invention relates to a coating and developing apparatus.
Background
Conventionally, there has been known a coating and developing apparatus which performs a coating process of a resist on a substrate such as a semiconductor wafer and a developing process by supplying a developing solution to the substrate exposed by an exposure apparatus.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2010-16098.
Disclosure of Invention
Problems to be solved by the invention
The invention provides a technology capable of efficiently performing a series of coating and developing treatments including a cleaning treatment.
Means for solving the problems
A coating and developing apparatus according to an aspect of the present invention includes a feeding and discharging station, a processing station, a pre-coating cleaning unit, and a post-coating cleaning unit. The carry-in/out station has a cassette mounting section on which a cassette containing a plurality of substrates can be mounted. The processing station comprises: a coating processing part for coating the front side of the substrate with a resist; a developing treatment section for supplying a developing solution to the front surface of the substrate exposed by the exposure device to perform a developing treatment; and a heating portion that heats the substrate. The pre-coating cleaning unit is provided between the carry-in/out station and the exposure apparatus, and physically cleans the front surface of the substrate before the coating process. The post-coating cleaning unit is provided between the processing station and the exposure apparatus, and physically cleans the back surface of the substrate after the coating process.
Effects of the invention
According to the present invention, a series of coating and developing processes including a cleaning process can be efficiently performed.
Drawings
Fig. 1 is a schematic plan view of a coating and developing apparatus according to embodiment 1.
Fig. 2 is a schematic side view of the coating and developing apparatus according to embodiment 1.
Fig. 3 is a schematic side view of the processing station of embodiment 1.
Fig. 4 is a schematic side view of the conveying block of embodiment 1.
Fig. 5 is a diagram showing a wafer transfer flow according to embodiment 1.
Fig. 6 is a schematic plan view of the pre-application cleaning unit according to embodiment 1.
Fig. 7 is a schematic side view of the pre-application cleaning unit according to embodiment 1.
Fig. 8 is a schematic plan view of the post-coating cleaning unit according to embodiment 1.
Fig. 9 is a schematic side view of the post-coating cleaning unit according to embodiment 1.
Fig. 10 is a schematic plan view of the coating and developing apparatus according to embodiment 2.
Fig. 11 is a schematic side view of the coating and developing apparatus according to embodiment 2.
Fig. 12 is a schematic plan view of the coating and developing apparatus according to embodiment 3.
Fig. 13 is a schematic side view of the coating and developing apparatus according to embodiment 3.
Detailed Description
Hereinafter, a mode for implementing the coating and developing apparatus of the present invention (hereinafter, referred to as "embodiment") will be described in detail with reference to the drawings. The coating and developing apparatus of the present invention is not limited to this embodiment. In addition, the embodiments can be appropriately combined within a range in which the processing contents are not contradictory. In the following embodiments, the same parts are denoted by the same reference numerals, and redundant description thereof is omitted.
In the following description of the embodiments, the terms "constant", "orthogonal", "perpendicular" or "parallel" are sometimes used, and the terms are not necessarily intended to be "constant", "orthogonal", "perpendicular" or "parallel" in a strict sense. That is, each of the above descriptions is a description of a deviation of allowable manufacturing accuracy, setting accuracy, and the like.
(embodiment 1)
Fig. 1 is a schematic plan view of a coating and developing apparatus according to embodiment 1. Fig. 2 is a schematic side view of the coating and developing apparatus according to embodiment 1. Fig. 3 is a schematic side view of the processing station of embodiment 1. Fig. 4 is a schematic side view of the conveying block of embodiment 1.
As shown in fig. 1, the coating and developing apparatus 1 of the embodiment includes a carry-in and carry-out station S1, a cleaning station S2, a transfer station S3, a processing station S4, and an interface station S5. They are connected in the horizontal direction (here, Y-axis direction) in the order of the in-out station S1, the cleaning station S2, the transfer station S3, the processing station S4, and the interface station S5. Further, the coating and developing apparatus 1 includes a control device 6.
< Send in/out station S1 >
The carry-in/out station S1 includes: a plurality of cassette mounting tables 11 on which the cassettes C can be mounted; a plurality of opening/closing portions 12 provided on a front wall surface when viewed from the cartridge mounting table 11; and a transport unit 13 for taking out the wafers W from the cassette C through the opening/closing unit 12.
The cassette C is a container capable of accommodating a plurality of semiconductor wafers (hereinafter referred to as wafers W). The transfer unit 13 transfers the wafer W between the 1 st transfer unit TRS1 and the cassette C. The transfer unit 13 includes a holding unit for holding the wafer W. The conveying unit 13 is movable in the horizontal direction and the vertical direction and rotatable about a vertical axis.
< cleaning station S2 >
The cleaning station S2 is provided between the in-out station S1 and the cross station S3. At the cleaning station S2, there are provided: a 1 st transfer portion TRS1 for transferring the wafer W; a conveying unit 22 for conveying the wafer W; a pre-coating cleaning unit 23 for cleaning the wafer W; and an inspection unit 24 for inspecting the wafer W.
The 1 st delivery portion TRS1 is disposed at a position accessible by the conveying portion 13 and the conveying portion 22. The 1 st transfer portion TRS1 has, for example, a rectangular case, and can store the wafer W in the case. The 1 st delivery portion TRS1 is accessible to the conveying portion 13 and the conveying portion 22. The 1 st transfer portion TRS1 may have a temperature adjustment mechanism for adjusting the temperature of the wafer W to a predetermined temperature.
The transfer unit 22 includes a holding unit for holding the wafer W. The conveying unit 22 is movable in the horizontal direction and the vertical direction and rotatable about a vertical axis. The transfer unit 22 transfers the wafer W between the 1 st transfer unit TRS1, the pre-coating cleaning unit 23, the inspection unit 24, and the shelf unit 31 described later.
The pre-coating cleaning unit 23 physically cleans the front surface of the wafer W before the resist or the like is applied by a coating processing unit described later. For example, the pre-application cleaning unit 23 is a so-called wiper device that can rotate the wafer W while holding the wafer W, and can bring a brush into contact with the front surface of the rotating wafer W. Thus, the pre-coating cleaning unit 23 removes, for example, foreign substances attached to the front surface of the wafer W or damages on the front surface of the wafer W. A specific configuration example of the pre-application cleaning unit 23 will be described later. In the present specification, "performing physical cleaning" means removing dust, scratches, and the like carried on the wafer W using physical force such as the pressure of a jet flow or the frictional force of a brush.
As shown in fig. 2, in the cleaning station S2, the plurality of pre-application cleaning units 23 are arranged in a row in the height direction. Here, an example in which 4 pre-application cleaning units 23 are stacked is shown, and the conveying unit 22 can access the 4 pre-application cleaning units 23. The number of the pre-coating cleaning units 23 provided in the cleaning station S2 is not limited to 4, and may be 1, for example.
The inspection unit 24 inspects the state of the wafer W. For example, the inspection unit 24 may measure a development line width as a front surface state of the wafer W after the development process. The inspection unit 24 may measure the thickness of the resist film as the front surface state of the wafer W after the coating process. Further, the coating and developing apparatus 1 does not necessarily have to have the inspection portion 24.
< switching station S3 >
The switching station S3 is provided between the incoming/outgoing station S1 and the switching station S3. At the transfer station S3, a rack unit 31, a plurality of (here, 2) conveyors 32, and a rack unit 33 are provided. The shelf unit 31 is disposed at a position accessible to the conveying section 22, the conveying section 32, and conveying sections 41 to 46 described later. The 2 conveying portions 32 are disposed at positions facing each other across the shelf unit 31. The shelf unit 33 is disposed on the opposite side of the shelf unit 31 as viewed from the conveying unit 32, and only 1 conveying unit 32 can access.
The plurality of processing units are arranged in the shelf unit 31 in a row in the height direction. For example, as shown in fig. 2, a plurality of the 2 nd transfer portions TRS2 as transfer portions of the wafers W are disposed on the shelf unit 31. The 2 nd hand-over portions TRS2 are disposed at height positions corresponding to the 6 processing blocks B1 to B6 of the processing station S4, respectively.
The 2 nd delivery portion TRS2 has, for example, a rectangular case, and the wafer W can be stored in the case. The 2 nd delivery portion TRS2 is accessible to the transport portion 22 and the transport portion 32. The 2 nd delivery part TRS2 can be accessed by the transport parts 41 to 46 disposed in the corresponding processing blocks B1 to B6 among the transport parts 41 to 46 described later. The No. 2 delivery portion TRS2 may have a temperature adjustment mechanism for adjusting the temperature of the wafer W to a predetermined temperature.
The transfer unit 32 includes a holding unit for holding the wafer W. The transfer unit 32 is movable in the horizontal direction and the vertical direction and rotatable about a vertical axis, and transfers the wafers W between the plurality of No. 2 delivery portions TRS2 disposed in the rack unit 31 or between the rack unit 31 and the rack unit 33.
The plurality of processing units are arranged in the shelf unit 33 in a row in the height direction. For example, the plurality of adhesion processing sections AD are disposed in the shelf unit 33. The bonding unit AD performs a bonding process of heat-treating the wafer W in a vapor atmosphere such as Hexamethyldisilazane (HMDS) in order to improve the adhesion between the wafer W and the resist film.
< processing station S4: processing blocks B1-B6 >
As shown in fig. 1 to 4, the processing station S4 has 6 stacked processing blocks B1 to B6 and a transfer block BM. The transport block BM extends in the arrangement direction (here, the Y-axis direction) from the loading/unloading station S1 to the interface station S5.
Each of the processing blocks B1 to B6 has front processing blocks B1F to B6F and rear processing blocks B1B to B6B. The front processing blocks B1F to B6F, the rear processing blocks B1B to B6B, and the transport block BM are arranged side by side in a direction (here, the X-axis direction) orthogonal to the arrangement direction of the carry-in/out station S1 to the interface station S5. The front processing blocks B1F to B6F and the rear processing blocks B1B to B6B are disposed at positions facing each other with the transfer block BM therebetween. Specifically, the front processing blocks B1F to B6F are disposed on the positive X-axis side of the transport block BM, and the rear processing blocks B1B to B6B are disposed on the negative X-axis side of the transport block BM.
As shown in fig. 2, the front-side processing blocks B1F to B6F are stacked in this order from the bottom. Among them, a plurality of (here, 4) coating processing units COT are arranged in the front processing blocks B1F to B3F in a row in the Y-axis direction.
The coating processing unit COT performs a coating process of coating a film forming material such as a resist on the front surface of the wafer W. Specifically, the coating processing unit COT includes, for example, a holding unit for holding and rotating the wafer W, and a cup-like member surrounding the holding unit, and forms a film on the front surface of the wafer W by supplying a film forming material from a chemical solution nozzle not shown to the front surface of the wafer W.
In embodiment 1, the 4 Coating treatment units COT arranged in the lowermost front side processing block B1F apply BARC (Bottom Anti-reflection Coating) as a film formation material to the front surface of the wafer W. Further, the front surface of the BARC-coated wafer W is coated with a resist as a film forming material by the 4 coating treatment portions COT arranged in the front side processing block B2F. Further, the top coating liquid as a film forming material is applied to the front surface of the wafer W on which the resist is applied by the 4 coating processing units COT arranged in the front side processing block B3F.
In the front processing blocks B4F to B6F, a plurality of (here, 4) developing units DEV are arranged in a row in the Y-axis direction.
The developing unit DEV supplies a developing solution to the front surface of the wafer W exposed by the exposure apparatus EXP to perform a developing process. Specifically, the developing unit DEV includes a holding unit for holding and rotating the wafer W, a cup surrounding the holding unit, and the like, and supplies the developing solution to the front surface of the wafer W from a chemical solution nozzle not shown. After that, the developing treatment unit DEV washes away the developer remaining on the front surface of the wafer W with a cleaning solution from a cleaning solution supply mechanism, not shown, and then rotates the wafer W at a high speed using the holding unit to dry the wafer W.
As shown in fig. 3, the rear processing blocks B1B to B6B are stacked in this order from the bottom. The rear processing blocks B1B through B6B are disposed at the same height positions as the front processing blocks B1F through B6F, respectively.
Among the rear processing blocks B1B to B6B, a plurality of (here, 12) 1 st heating portions BK1 are arranged in the rear processing blocks B1B to B3B. The 121 st heating units BK1 are arranged in 6, for example, horizontal directions (Y-axis directions) and stacked in 2 layers in the height direction (Z-axis direction). The 1 st heating part BK1 heats the wafer W before the exposure process to a predetermined temperature.
Among the rear processing blocks B1B to B6B, a plurality of (here, 12) 2 nd heating parts BK2 are arranged in the rear processing blocks B4B to B6B. The 122 nd heating units BK2 are arranged in 6, for example, horizontal directions (Y-axis directions) and stacked in 2 layers in the height direction (Z-axis direction). The 2 nd heating part BK2 heats the wafer W after the exposure process to a predetermined temperature.
The number and arrangement of the 1 st heating unit BK1 and the 2 nd heating unit BK2 are not limited to those shown in fig. 3. In the rear processing blocks B1B to B6B, processing units other than the 1 st heating unit BK1 and the 2 nd heating unit BK2, such as a buffer unit on which the wafers W are temporarily placed, may be disposed.
< processing station S4: transport block BM >
The transport block BM is disposed between the front processing blocks B1F to B6F and the rear processing blocks B1B to B6B. As shown in FIG. 4, a plurality of (here, 6) conveying sections 41 to 46 are arranged in the conveying block BM in a height direction. The plurality of conveying sections 41 to 46 are disposed at the height positions of the processing blocks B1 to B6, respectively.
The transport sections 41 to 46 have holding sections for holding the wafers W. The transport units 41 to 46 are movable in the horizontal direction and the vertical direction and are rotatable about the vertical axis, and transport the wafers W in the corresponding process blocks B1 to B6. That is, the transport unit 41 transports the wafer W to the coating processing unit COT and the 1 st heating unit BK1 disposed in the processing block B1, and the transport unit 42 transports the wafer W to the coating processing unit COT and the 1 st heating unit BK1 disposed in the processing block B2. The transfer unit 43 transfers the wafer W to the coating processing unit COT and the 1 st heating unit BK1 disposed in the processing block B3, and the transfer unit 44 transfers the wafer W to the developing processing unit DEV and the 2 nd heating unit BK2 disposed in the processing block B4. The transfer unit 45 transfers the wafer W to the developing unit DEV and the 2 nd heating unit BK2 disposed in the process block B5, and the transfer unit 46 transfers the wafer W to the developing unit DEV and the 2 nd heating unit BK2 disposed in the process block B6.
< interface station S5 >
The interface station S5 connects the interface station S3 and the exposure apparatus EXP. The interface station S5 is provided with a shelf unit 51, a transport section 52, a plurality of (here, 2) transport sections 53, a post-application cleaning section 54, and a post-exposure cleaning section 55.
The shelf unit 51 is disposed at a position accessible by the conveying sections 41 to 46, the conveying section 52, and the conveying section 53. The conveyance unit 52 is disposed between the shelf unit 51 and the exposure apparatus EXP. The 2 conveying portions 53 are disposed at positions facing each other across the shelf unit 51. The post-coating cleaning unit 54 is disposed on the side opposite to the rack unit 51 when viewed from one transport unit 53, and the post-exposure cleaning unit 55 is disposed on the side opposite to the rack unit 51 when viewed from the other transport unit 53.
The plurality of processing units are arranged in the shelf unit 51 in a row in the height direction. For example, as shown in fig. 1, a plurality of 3 rd transfer portions TRS3 serving as transfer portions for the wafers W are disposed in the shelf unit 51. The 3 rd transfer units TRS3 are disposed at height positions corresponding to the 6 processing blocks B1 to B6 of the processing station S4, respectively.
The 3 rd transfer portion TRS3 has, for example, a rectangular case, and the wafer W can be stored in the case. The 3 rd delivery portion TRS3 is accessible to the transport portion 22 and the transport portion 32. The 3 rd delivery part TRS3 can also be accessed by the transport parts 41 to 46 disposed in the corresponding processing blocks B1 to B6 among the transport parts 41 to 46. The 3 rd transfer portion TRS3 may have a temperature adjustment mechanism for adjusting the temperature of the wafer W to a predetermined temperature.
The transfer unit 52 includes a holding unit for holding the wafer W. The transfer unit 52 is movable in the horizontal direction and the vertical direction and rotatable about a vertical axis, and transfers the wafer W between the 3 rd interface portion TRS3 and the exposure apparatus EXP.
The 2 transfer portions 53 transfer the wafers W between the plurality of 3 rd delivery portions TRS3 arranged in the shelf unit 51. The transfer unit 53 disposed between the shelf unit 51 and the post-coating cleaning unit 54 also transfers the wafer W between the 3 rd transfer unit TRS3 and the post-coating cleaning unit 54. The transfer unit 53 disposed between the shelf unit 51 and the post-exposure cleaning unit 55 also transfers the wafer W between the 3 rd transfer unit TRS3 and the post-exposure cleaning unit 55. The transfer unit 53 includes a holding unit for holding the wafer W. The conveying unit 53 is movable in the horizontal direction and the vertical direction and is rotatable about a vertical axis.
The post-coating cleaning unit 54 physically cleans the back surface of the wafer W coated with a film forming material such as a resist by the coating processing unit COT. For example, the post-application cleaning unit 54 brings the rotating brush into contact with the back surface of the wafer W. This enables, for example, removal of a focus that causes defocus in the exposure processing. A specific configuration example of the post-application cleaning unit 54 will be described later.
The post-exposure cleaning unit 55 cleans the wafer W after the exposure process using a cleaning liquid (e.g., deionized water).
< control device 6 >
The control device 6 includes a control section 61 and a storage section 62. The control unit 61 is, for example, a computer and has a computer-readable storage medium. A program for controlling various processes executed in the coating and developing apparatus 1 is stored in the storage medium.
The control section 61 controls the operation of the coating and developing apparatus 1 by reading and executing a program stored in a storage medium. The program may be stored in a computer-readable storage medium and installed from another storage medium to the storage medium of the control unit 61.
Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
< example of concrete operation of the coating and developing apparatus 1 >
Next, an example of a specific operation of the coating and developing apparatus 1 will be described with reference to fig. 5. Fig. 5 is a diagram showing a wafer transfer flow according to embodiment 1.
As shown in fig. 5, in the coating and developing apparatus 1 according to embodiment 1, first, the transfer unit 13 takes out the wafer W from the cassette C mounted on the cassette mounting base 11 and mounts the wafer W on the 1 st delivery unit TRS1 (see fig. 1). Next, the transfer unit 22 takes out the wafer W from the 1 st transfer unit TRS1 and transfers it to the pre-application cleaning unit 23, and the pre-application cleaning unit 23 physically cleans the front surface of the wafer W with a brush (pre-application cleaning process).
Next, the transfer unit 22 takes out the wafer W subjected to the pre-coating cleaning process from the pre-coating cleaning unit 23 and places the wafer W on the No. 2 delivery portion TRS2 of the shelf unit 31. Next, the transfer unit 22 takes out the wafer W from the 2 nd transfer unit TRS2 and transfers the wafer W to the bonding unit AD of the shelf unit 33, and the bonding unit AD performs a bonding process on the wafer W.
Next, the transfer unit 32 takes out the wafer W from the bonding unit AD and places the wafer W on the No. 2 transfer unit TRS2 corresponding to the process block B1. Next, the transfer unit 41 of the process block B1 takes out the wafer W from the 2 nd transfer unit TRS2 and transfers the wafer W to the coating process unit COT, and the coating process unit COT coats the front surface of the wafer W with BARC. Then, the transfer unit 41 takes out the wafer W from the coating process unit COT and transfers the wafer W to the 1 st heating unit BK1, and the 1 st heating unit BK1 heats the BARC-coated wafer W to a predetermined temperature. For example, the 1 st heating part BK1 heats the BARC-coated wafer W to 200 ℃.
Next, the transfer unit 41 takes out the wafer W from the 1 st heating unit BK1 and mounts the wafer W on the 2 nd delivery portion TRS2 corresponding to the process block B1. Then, the transfer unit 32 transfers the wafers W from the 2 nd hand-over portion TRS2 corresponding to the process block B1 to the 2 nd hand-over portion TRS2 corresponding to the process block B2.
Next, the transfer unit 42 of the process block B2 takes out the wafer W from the 2 nd transfer unit TRS2 and transfers the wafer W to the coating unit COT, and the coating unit COT coats the front surface of the wafer W with the resist. Then, the transport unit 41 takes out the wafer W from the coating processing unit COT and transports the wafer W to the 1 st heating unit BK1, and the 1 st heating unit BK1 heats the wafer W after the resist coating to a predetermined temperature. For example, the 1 st heating part BK1 heats the resist-coated wafer W to 110 ℃.
Next, the transfer unit 42 takes out the wafer W from the 1 st heating unit BK1 and mounts the wafer W on the 2 nd delivery portion TRS2 corresponding to the process block B2. Then, the transfer unit 32 transfers the wafers W from the 2 nd hand-over portion TRS2 corresponding to the process block B2 to the 2 nd hand-over portion TRS2 corresponding to the process block B3.
Next, the transfer unit 43 of the process block B3 takes out the wafer W from the 2 nd transfer unit TRS2 and transfers the wafer W to the coating unit COT, and the coating unit COT coats the top coating liquid on the front surface of the wafer W. Then, the transport unit 41 takes out the wafer W from the coating process unit COT and transports the wafer W to the 1 st heating unit BK1, and the 1 st heating unit BK1 heats the wafer W coated with the top coating liquid to a predetermined temperature. For example, the 1 st heating unit BK1 heats the wafer W coated with the top coating liquid to 100 ℃.
Next, the transfer unit 43 takes out the wafer W from the 1 st heating unit BK1 and mounts the wafer W on the 3 rd delivery unit TRS3 of the shelf unit 51, and the transfer unit 53 takes out the wafer W from the 3 rd delivery unit TRS3 and transfers the wafer W to the post-coating cleaning unit 54. Then, the post-application cleaning unit 54 physically cleans the back surface of the wafer W after the application process (post-application cleaning process) using a brush.
Next, after the transfer unit 53 takes out the wafer W from the post-coating cleaning unit 54 and mounts it on the 3 rd transfer unit TRS3, the transfer unit 52 takes out the wafer W from the 3 rd transfer unit TRS3 and transfers it to the exposure apparatus EXP. Then, the wafer W is subjected to exposure processing by the exposure apparatus EXP.
Next, the transfer unit 52 takes out the wafer W after the exposure processing from the exposure apparatus EXP and mounts the wafer W on the 3 rd transfer unit TRS3 of the shelf unit 51, and the transfer unit 53 takes out the wafer W from the 3 rd transfer unit TRS3 and transfers the wafer W to the post-exposure cleaning unit 55. Then, the post-exposure cleaning unit 55 cleans the front surface of the wafer W after the exposure process using deionized water or the like.
Next, the transfer unit 53 takes out the wafer W from the post-exposure cleaning unit 55 and places the wafer W on the 3 rd transfer portion TRS3 of the shelf unit 51. Specifically, the transfer unit 53 places the wafers W on the 3 rd transfer unit TRS3 corresponding to any one of the process blocks B4 to B6. Here, a case where the wafers W are placed in the process block B4 will be described.
Next, the transfer unit 44 of the process block B4 takes out the wafer W from the 3 rd transfer unit TRS3 and transfers the wafer W to the 2 nd heating unit BK2, and the 2 nd heating unit BK2 heats the wafer W after the exposure process to a predetermined temperature. For example, the 2 nd heating part BK2 heats the wafer W after the exposure process to 80 ℃.
Next, the transfer unit 44 takes out the wafer W from the 2 nd heating unit BK2 and transfers the wafer W to the developing unit DEV, and the developing unit DEV performs a developing process on the wafer W after the exposure process. Subsequently, the transfer unit 44 takes out the wafer W from the developing unit DEV and transfers the wafer W to the 2 nd heating unit BK2, and the 2 nd heating unit BK2 heats the wafer W after the developing process to a predetermined temperature. For example, the 2 nd heating part BK2 heats the wafer W after the development process to 110 ℃.
Next, the transportation section 44 takes out the wafer W from the 2 nd heating section BK2 and transports the wafer W to the 2 nd delivery section TRS2 corresponding to the process block B4. Then, the transfer unit 32 hands over the wafer W from the 2 nd hand-over unit TRS2 corresponding to the process block B4 to the 2 nd hand-over unit TRS2 accessible to the transfer unit 22. Then, the carrier unit 22 takes out the wafer W from the 2 nd transfer unit TRS2 and mounts it on the 1 st transfer unit TRS1, and the carrier unit 13 takes out the wafer W from the 1 st transfer unit TRS1 and stores it in the cassette C. Thereby, the series of substrate processing by the coating and developing apparatus 1 is completed.
The flow of transporting the wafer W shown in fig. 5 is an example. For example, the coating and developing apparatus 1 may perform the post-coating cleaning process by the post-coating cleaning unit 54 after the resist coating process and the subsequent heating process without performing the coating of the BARC and the top layer coating liquid. The coating and developing apparatus 1 may perform coating processing of a film-forming material other than the resist, BARC, and top layer coating liquid.
< example of construction of washing part before coating >
Next, a specific configuration example of the pre-application cleaning unit 23 will be described with reference to fig. 6 and 7. Fig. 6 is a schematic plan view of the pre-application cleaning unit 23 according to embodiment 1. Fig. 7 is a schematic side view of the pre-application cleaning unit 23 according to embodiment 1. In fig. 7, the liquid supply unit 105 is omitted.
As shown in fig. 6 and 7, the pre-coating cleaning section 23 includes a chamber 101, a substrate holding section 102, a cup-shaped body section 103, a cleaning section 104, and a liquid supply section 105.
The chamber 101 houses a substrate holding section 102, a cup-shaped body section 103, a cleaning section 104, and a liquid supply section 105. A Fan Filter (FFU) 111 (see fig. 7) for forming a down flow in the chamber 101 is provided on the top of the chamber 101.
The substrate holding portion 102 includes: a body 121 having a larger diameter than the wafer W; a plurality of grip portions 122 provided on the upper surface of the body portion 121; a stay member 123 for supporting the body 121; and a driving unit 124 for rotating the column member 123. The number of the grip portions 122 is not limited to the illustrated number.
The substrate holding portion 102 holds the wafer W by gripping the peripheral edge portion of the wafer W with the plurality of gripping portions 122. Thereby, the wafer W is horizontally held with a slight gap from the upper surface of the body 121.
In addition, although the substrate holding section 102 for holding the peripheral edge portion of the wafer W by using the plurality of holding sections 122 is exemplified here, the pre-coating cleaning section 23 may be configured to have a vacuum chuck for sucking and holding the back surface of the wafer W in place of the substrate holding section 102.
The cup-shaped body 103 is disposed so as to surround the substrate holder 102. The bottom of the cup-shaped body 103 is formed with: a drain port 131 for discharging the processing liquid supplied to the wafer W to the outside of the chamber 101; and an exhaust port 132 for exhausting the atmosphere inside the chamber 101.
The cleaning unit 104 includes a brush 141 and a rotating shaft 142, and the rotating shaft 142 extends in the vertical direction and supports the brush 141 such that the brush 141 is rotatable. The rotation shaft 142 is connected to a rotation mechanism, not shown, which rotates the rotation shaft 142 to rotate the brush 141 about the vertical axis.
The brush 141 includes, for example: a brush main body made of resin and having a cylindrical shape; and a cleaning body provided at a lower portion of the brush body and capable of pressing the wafer W. The cleaning body is formed, for example, by a plurality of tufts. The cleaning body may be made of sponge or the like.
Further, cleaning unit 104 includes: an arm 143 extending in the horizontal direction and supporting the brush 141 from above via a rotating shaft 142; and a rotation elevating mechanism 144 for rotating and elevating the arm 143. The arm 143 moves the brush 141 between a processing position above the wafer W and a standby position outside the wafer W by the rotary elevating mechanism 144.
The cleaning unit 104 is connected to a 1 st processing liquid supply source 148 via a valve 146, a flow rate regulator (not shown), and the like. The cleaning unit 104 discharges the 1 st processing liquid supplied from the 1 st processing liquid supply source 148 to the wafer W from the hollow portion vertically penetrating the brush 141. The 1 st treatment liquid is, for example, DHF (dilute hydrofluoric acid). The treatment solution 1 is not limited to DHF, and may be other treatment solutions such as SC1 (a mixed solution of ammonia, hydrogen peroxide, and water) and deionized water.
The liquid supply portion 105 includes: a nozzle 151; a nozzle arm 152 extending in the horizontal direction and supporting the nozzle 151 from above; and a rotation and elevation mechanism 153 for rotating and elevating the nozzle arm 152.
The nozzle 151 is connected to a 2 nd processing liquid supply source 158 via a valve 156, a flow rate regulator (not shown), and the like. The liquid supply unit 105 discharges the 2 nd processing liquid supplied from the 2 nd processing liquid supply source 158 toward the wafer W. The 2 nd treatment liquid is, for example, a rinse liquid such as deionized water. The 2 nd treatment liquid is not limited to the rinse liquid, and may be another treatment liquid.
Here, a configuration example in which the pre-application cleaning unit 23 performs physical cleaning by the brush 141 is given, but a configuration may be adopted in which a splash nozzle that sprays the treatment liquid onto the front surface of the wafer W is provided. In this case, the pre-application cleaning unit 23 can physically clean the front surface of the wafer W by the pressure of the processing liquid ejected from the shower nozzle. The pre-application cleaning unit 23 may be configured to have a front surface cleaning unit (brush 141, splash nozzle) for physically cleaning the front surface of the wafer W, and a back surface cleaning unit (brush, splash nozzle) for physically cleaning the back surface of the wafer W. In this case, the back surface of the wafer W can be physically cleaned simultaneously with the front surface of the wafer W.
< example of formation of post-coating cleaning part >
Next, a configuration example of the post-coating cleaning unit 54 will be described with reference to fig. 8 and 9. Fig. 8 is a schematic plan view of the post-coating cleaning unit 54 according to embodiment 1. Fig. 9 is a schematic side view of the post-coating cleaning unit 54 according to embodiment 1.
As shown in fig. 8 and 9, the post-coating cleaning section 54 includes: 2 suction pads 210 for horizontally sucking and holding the back surface of the wafer W; and a spin chuck 211 for horizontally sucking and holding the back surface of the wafer W received from the suction pad 210. Further, the post-coating cleaning section 54 includes: a case 213 whose upper surface is opened; and a cleaning unit 218 for physically cleaning the back surface of the wafer W.
The 2 suction pads 210 are formed in an elongated substantially rectangular shape and are provided substantially in parallel with each other with a spin chuck 211 interposed therebetween in a plan view so as to be able to hold the peripheral edge portion of the back surface of the wafer W. Each of the suction pads 210 is supported by a substantially rectangular support plate 214 that is longer than the suction pad 210. The support plate 214 has both ends supported by a frame 215, and the frame 215 is movable in the horizontal direction (here, the Y-axis direction) and the vertical direction (the Z-axis direction in fig. 1) by a drive mechanism (not shown).
An upper cup 216 is provided on the upper surface of the frame 215. An opening having a diameter larger than the diameter of the wafer W is formed in the upper surface of the upper cup 216, and the wafer W is transferred between the transfer unit 53 and the suction pad 210 through the opening.
As shown in fig. 9, the spin chuck 211 is connected to a drive mechanism 221 via a shaft 220. The spin chuck 211 is rotatable and movable up and down by a drive mechanism 221.
Around the spin chuck 211, for example, 3 lift pins 222 which can be lifted and lowered by a lift mechanism (not shown) are provided. This allows the wafer W to be transferred between the lift pins 222 and the transfer unit 53.
At the bottom of the housing 213 are provided: a drain pipe 240 for discharging the cleaning liquid; and an exhaust pipe 241 that forms a downward airflow in the post-coating cleaning portion 54 and exhausts the airflow.
Next, the structure of the cleaning unit 218 will be described. As shown in fig. 9, the cleaning unit 218 includes a cleaning body 218a, a support member 218b, and a driving unit 218 c.
The cleaning body 218a is a member capable of pressing the back surface of the wafer W. The cleaning body 218a is, for example, a brush composed of a large number of tufts. The upper surface of the cleaning body 218a, i.e., the contact surface with the wafer W, has, for example, a circular shape smaller than the upper surface of the wafer W. The cleaning body 218a may be a sponge.
A support member 218b is provided on the back surface of the cleaning body 218 a. The support member 218b extends in the vertical direction (Z-axis direction), and supports the cleaning body 218a at one end.
A driving portion 218c is provided at the other end of the pillar member 218 b. The driving portion 218c rotates the support member 218b about the vertical axis. This enables the cleaning body 218a supported by the support member 218b to rotate about the vertical axis.
The washing part 218 is horizontally supported by the arm 280. A cleaning nozzle 280a for supplying a cleaning fluid to the back surface of the wafer W held by the suction pad 210 or the spin chuck 211 is provided in the arm 280 adjacent to the cleaning body 218 a. As the cleaning fluid, for example, deionized water is used.
The arm 280 is connected to the moving portion 281. The moving portion 281 horizontally moves the arm 280 along a guide rail 282 extending in the horizontal direction (here, the X-axis direction). The moving unit 281 raises and lowers the arm 280 in the vertical direction (Z-axis direction).
The arm 280 extends and contracts in the horizontal direction (here, the Y-axis direction) by a drive unit (not shown), for example. Thereby, the arm 280 can move the cleaning portion 218 and the cleaning nozzle 280a in the Y-axis direction.
In the post-coating cleaning process, the post-coating cleaning unit 54 first moves the suction pad 210 holding the wafer W in the horizontal direction (here, the Y-axis direction) together with the support plate 214 and the upper cup 216. Thus, the spin chuck 211 is disposed in a position close to the outer peripheral portion of the wafer W, and the cleaning unit 218 is disposed in a position close to the central portion of the wafer W.
Next, the cleaning unit 218 is raised by the moving unit 281, and the cleaning body 218a is pressed against the back surface of the wafer W. Here, the cleaning unit 218 is raised, but the suction pad 210 may be lowered to press the back surface of the wafer W against the cleaning member 218 a. Further, the suction pad 210 may be lowered while the cleaning portion 218 is raised.
Then, the supply of deionized water from the cleaning nozzle 280a to the back surface of the wafer W is started. Further, the rotation of the cleaning body 218a is started.
The physical cleaning of the back surface of the wafer W by the cleaning unit 218 can be performed by a combination of the movement of the wafer W by the suction pad 210 and the movement of the cleaning unit 218 by the moving unit 281. For example, the cleaning body 218a is reciprocated in the X-axis direction between 2 adsorption pads 210, and the adsorption pads 210 are moved in the Y-axis negative direction by a distance equal to or less than the diameter of the cleaning body 218a when the moving direction of the cleaning body 218a is switched. Thereby, the central region of the wafer W including the region sucked and held by the spin chuck 211 can be cleaned by the cleaning body 218 a. Then, the rotation of the cleaning body 218a is stopped, and the supply of pure water from the cleaning nozzle 280a is stopped.
Next, the suction pad 210 is moved so that the center portion of the wafer W is positioned above the spin chuck 211, and then brought into contact with the suction pad 210 to suck the wafer W. Then, the spin chuck 211 is raised to transfer the wafer W from the suction pad 210 to the spin chuck 211.
Next, the spin chuck 211 is rotated by the drive mechanism 221 to rotate the wafer W. Next, the supply of deionized water from the cleaning nozzle 280a to the back surface of the wafer W is started, and the rotation of the cleaning body 218a is started. Then, the cleaning body 218a is moved horizontally toward the outer peripheral portion of the wafer W.
When the cleaning body 218a reaches the outer peripheral portion of the wafer W, the rotation of the cleaning body 218a is stopped, and the supply of deionized water from the cleaning nozzle 280a is stopped. Then, the cleaning body 218a is retracted from the wafer W. Then, the deionized water adhering to the wafer W is spun off by rotating the spin chuck 211 at a high speed to dry the wafer W.
(embodiment 2)
Next, the configuration of the coating and developing apparatus according to embodiment 2 will be described with reference to fig. 10 and 11. Fig. 10 is a schematic plan view of the coating and developing apparatus according to embodiment 2. Fig. 11 is a schematic side view of the coating and developing apparatus according to embodiment 2.
As shown in fig. 10, the coating and developing apparatus 1A of embodiment 2 includes a cleaning station S2A. Cleaning station S2A includes shelving unit 21A, transport section 22, a plurality of pre-application cleaning sections 23, and transport section 25.
The shelf unit 21A is disposed at a position accessible to the conveying section 13, the conveying section 22, and the conveying section 25. As shown in fig. 11, the plurality of TRSs 1 are arranged in the shelf unit 21A in a row in the height direction. For example, 41 st delivery portions TRS1 corresponding to 4 pre-application cleaning portions 23 arranged in the height direction are arranged in the shelf unit 21A.
The plurality of pre-application cleaning units 23 are arranged 4 in the height direction on each of the X-axis positive direction side and the X-axis negative direction side of the conveying unit 22.
The conveying unit 25 is disposed on the X-axis negative side of the rack unit 21A, for example. The transfer unit 25 includes a holding unit for holding the wafer W. The transfer unit 25 is movable in the horizontal direction and the vertical direction, and transfers the wafer W placed on one of the 1 st transfer units TRS1 to another 1 st transfer unit TRS1, for example.
In the coating and developing apparatus 1A according to embodiment 2, for example, the wafer W placed in any of the 1 st delivery parts TRS1 is taken out from the transfer part 25 by the transfer part 13 and transferred to the 1 st delivery part TRS1 corresponding to the pre-coating cleaning part 23 for processing the wafer W. Then, the transfer unit 22 takes out the wafer W from the 1 st transfer unit TRS1 and carries it into the corresponding pre-coating cleaning unit 23.
As described above, the cleaning station S2A may be provided with: a transfer unit 25 for transferring the wafers W between the 1 st transfer units TRS 1; and a transfer unit 22 for transferring the wafer W between the 1 st transfer unit TRS1 and the pre-coating cleaning unit 23. This can improve the throughput per unit time.
(embodiment 3)
Next, the configuration of the coating and developing apparatus according to embodiment 3 will be described with reference to fig. 12 and 13. Fig. 12 is a schematic plan view of the coating and developing apparatus according to embodiment 3. Fig. 13 is a schematic side view of the coating and developing apparatus according to embodiment 3.
As shown in fig. 12 and 13, the coating and developing apparatus 1B of embodiment 3 includes a configuration in which the cleaning stations S2 and S2A are not included, and the delivery station S3 is connected to the feeding and discharging station S1.
The coating and developing apparatus 1B of embodiment 3 includes a process station S4B. As shown in fig. 13, the processing station S4B includes a plurality of (here, 5) processing blocks B1 to B5, wherein the processing blocks B1F, B2F have a plurality of pre-application cleaning portions 23 on the front side of the processing blocks B1, B2. Specifically, in the front processing block B1F, 2 pre-application cleaning units 23 are arranged in a row in the Y-axis direction. Similarly, in the front processing block B2F, 2 pre-application cleaning units 23 are arranged in a row in the Y-axis direction.
The coating processing unit COT and the developing processing unit DEV are disposed in front processing blocks B3F to B5F disposed above the front processing blocks B1F and B2F. For example, in the example shown in fig. 13, a plurality of coating process units COT are disposed in the front process blocks B3F and B4F, and a plurality of developing process units DEV are disposed in the front process block B5F.
In this manner, the pre-coating cleaning unit 23 may be disposed in the processing station S4B. In this case, the pre-coating cleaning unit 23, the coating processing unit COT, and the developing processing unit DEV are stacked in this order from the bottom, and a flow line of the wafer W is formed upward from below the processing blocks B1 to B5, whereby the throughput per unit time can be increased.
(other embodiments)
In the above-described embodiment, an example in which the pre-application cleaning unit 23 is provided in the cleaning stations S2, S2A, or the processing station S4B is described. However, the pre-application cleaning unit 23 may be provided at the interface station S5, or may be provided at the interface station S3, for example. When the pre-application cleaning unit 23 is disposed at the interface station S5, the plurality of pre-application cleaning units 23 and the plurality of post-application cleaning units 54 are arranged in the height direction. Further, the function of the pre-application cleaning unit 23, that is, the function of physically cleaning the front surface of the wafer W (for example, the cleaning unit 104 shown in fig. 6) may be added to the cleaning unit of the post-application cleaning unit 54 provided in the interface station S5.
As described above, the coating and developing apparatus (coating and developing apparatus 1, as an example) of the embodiment has the carry-in and carry-out station (carry-in and carry-out station S1, as an example), the process station (process station S4, as an example), the pre-coating cleaning section (pre-coating cleaning section 23, as an example), and the post-coating cleaning section (post-coating cleaning section 54, as an example). The carry-in/out station includes a cassette mounting portion (cassette mounting table 11, as an example) on which a cassette (cassette C, as an example) containing a plurality of substrates (wafers W, as an example) is mounted. The processing station comprises: a coating processing unit (coating processing unit COT, as an example) that performs coating processing of coating a resist on the front surface of the substrate; a developing process section (for example, a developing process section DEV) for performing a developing process by supplying a developing solution to the front surface of the substrate exposed by the exposure apparatus (for example, the exposure apparatus EXP); and a heating portion (as an example, a 1 st heating portion BK1, a 2 nd heating portion BK2) that heats the substrate. The pre-coating cleaning unit is provided between the carry-in/out station and the exposure apparatus, and physically cleans the front surface of the substrate before the coating process. The post-coating cleaning unit is provided between the processing station and the exposure apparatus, and physically cleans the back surface of the substrate after the coating process.
By providing a pre-coating cleaning unit between the carry-in/out station and the exposure apparatus and a post-coating cleaning unit between the process station and the exposure apparatus, a series of coating and developing processes including a cleaning process can be efficiently performed.
The coating and developing apparatus of the embodiment may further include a cross-over station (as an example, cross-over station S3) provided between the carry-in-and-out station and the process station. The processing station has a plurality of processing blocks (as an example, processing blocks B1-B6) stacked, and the interface station includes: shelf units (as an example, shelf unit 31) provided with delivery portions of substrates (as an example, a plurality of 2 nd delivery portions TRS2) in multiple stages so as to correspond to the plurality of processing blocks; and a transfer section (for example, a transport section 32) that transfers the substrate from one transfer location to another transfer location. In this case, the pre-application cleaning unit may be provided between the carry-in/out station and the transfer station.
By providing the pre-coating cleaning unit between the carry-in/out station and the transfer station, the front surface of the substrate can be cleaned immediately before the coating process, for example, as compared with a case where the pre-coating treatment unit is provided on the front layer of the carry-in/out station. Therefore, it is possible to suppress the adhesion of foreign matter to the front surface of the substrate or the damage of the substrate during the period from the cleaning process before coating to the coating process. In addition, by cleaning the front surface of the substrate before entering the processing block, the cleanliness of the processing block can be maintained.
The coating and developing apparatus of the embodiment may further include a cleaning station (for example, cleaning stations S2 and S2A) including a pre-coating cleaning unit provided between the feeding-out station and the transfer station. In this case, the washing station may further include: a substrate placing section (for example, a 1 st delivery section TRS1) for placing the substrate conveyed from the carry-in/out station; and a conveying section (for example, a conveying section 22) for conveying the substrate among the substrate placing section, the pre-coating cleaning section, and the transfer section. By providing the transport unit in the cleaning station, an increase in the processing load of the transfer unit provided in the transfer station can be suppressed.
The processing station (as an example, the processing station S4B) may have a plurality of processing blocks (as an example, the processing blocks B1 to B5) stacked. In this case, the pre-coating cleaning unit may be provided in the process blocks (for example, process blocks B1 and B2). This makes it possible to prevent the substrate from being contaminated or damaged during the period from the cleaning before the coating until the coating process is performed.
The plurality of processing blocks may also include: a 1 st processing block (as an example, processing blocks B1, B2) provided with a pre-coating cleaning part; a 2 nd processing block (as an example, processing blocks B3, B4) provided with a coating processing section; and a 3 rd process block (as an example, process block B5) provided with a development process section. In this case, the 1 st processing block, the 2 nd processing block, and the 3 rd processing block are arranged in the order of the 1 st processing block, the 2 nd processing block, and the 3 rd processing block from below. By forming a flow line of substrates from below to above the processing block, the throughput per unit time can be improved.
The coating and developing apparatus of the embodiment may further include an interface station (as an example, the interface station S5) connecting the process station and the exposure device. In this case, the post-coating cleaning unit may be provided at the interface station. This enables the back surface of the substrate to be cleaned immediately before being sent to the exposure apparatus. Therefore, it is possible to suppress adhesion of foreign matter and the like to the back surface of the substrate during the period from the cleaning treatment after coating to the coating treatment.
The embodiments disclosed herein are illustrative in all respects and should not be considered as limiting. Indeed, the above-described embodiments can be implemented in a variety of ways. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope of the appended claims and the gist thereof.
Description of the reference numerals
C box
W wafer
S1 carry-in and carry-out station
S2 cleaning station
S3 switching station
S4 processing station
S5 interface station
COT coating processing part
DEV developing processing section
BK 11 st heating part
BK 22 nd heating part
EXP exposure device
BM transport block
1 coating and developing device
23 cleaning part before coating
24 inspection part

Claims (7)

1. A coating and developing apparatus comprising:
a carry-in/out station including a cassette loading section on which a cassette is loaded, the cassette containing a plurality of substrates;
a processing station including a coating processing section that performs a coating process of coating a resist on a front surface of the substrate, a developing processing section that performs a developing process of supplying a developing solution to the front surface of the substrate exposed by the exposure device, and a heating section that heats the substrate;
a pre-coating cleaning unit that is provided between the carry-in/out station and the exposure apparatus and that physically cleans the front surface of the substrate before the coating process; and
and a post-coating cleaning unit which is provided between the processing station and the exposure device and which physically cleans the back surface of the substrate after the coating process.
2. The coating and developing apparatus according to claim 1, wherein:
and an interface station disposed between the in-out station and the processing station,
the processing station has a plurality of processing blocks stacked,
the switching station includes:
a shelf unit having a plurality of layers of transfer portions for transferring the substrate so as to correspond to the plurality of processing blocks; and
a transfer unit that transfers the substrate from one of the handover sites to another of the handover sites,
the pre-coating cleaning section is provided between the feed-out station and the transfer station.
3. The coating and developing apparatus according to claim 2, wherein:
and a cleaning station including the pre-coating cleaning section provided between the carry-in and carry-out station and the transfer station,
the cleaning station further comprises:
a substrate placing section for placing the substrate conveyed from the carry-in/out station; and
and a conveying unit for conveying the substrate among the substrate placing unit, the pre-coating cleaning unit, and the transfer unit.
4. The coating and developing apparatus according to claim 1, wherein:
the processing station has a plurality of processing blocks stacked,
the pre-coating cleaning part is arranged on the processing block.
5. The coating and developing apparatus according to claim 4, wherein:
the plurality of processing blocks includes:
a 1 st processing block provided with the pre-coating cleaning part;
a 2 nd processing block provided with the coating processing part; and
a 3 rd processing block provided with the developing processing part,
the 1 st processing block, the 2 nd processing block, and the 3 rd processing block are arranged in the order of the 1 st processing block, the 2 nd processing block, and the 3 rd processing block from below.
6. A coating and developing apparatus according to any one of claims 1 to 5, wherein:
there is also an interface station connecting the processing station with the exposure apparatus,
the post-coating cleaning section is disposed at the interface station.
7. A coating and developing apparatus according to any one of claims 1 to 6, wherein:
the substrate is a semiconductor wafer.
CN202080056483.0A 2019-08-19 2020-08-05 Coating and developing device Pending CN114222948A (en)

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JP2019149736 2019-08-19
PCT/JP2020/029953 WO2021033542A1 (en) 2019-08-19 2020-08-05 Coating and developing apparatus

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US5345639A (en) * 1992-05-28 1994-09-13 Tokyo Electron Limited Device and method for scrubbing and cleaning substrate
JP3779483B2 (en) * 1998-03-23 2006-05-31 東京エレクトロン株式会社 Substrate cleaning apparatus and cleaning method
JP2007294817A (en) * 2006-04-27 2007-11-08 Sokudo:Kk Method, system, and apparatus for processing substrates
JP5183993B2 (en) * 2007-07-26 2013-04-17 株式会社Ｓｏｋｕｄｏ Substrate processing equipment
JP5058085B2 (en) 2008-07-02 2012-10-24 東京エレクトロン株式会社 Substrate cleaning device
JP5338757B2 (en) * 2010-07-09 2013-11-13 東京エレクトロン株式会社 Coating, developing device, coating, developing method and storage medium
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KR20220047346A (en) 2022-04-15
WO2021033542A1 (en) 2021-02-25
JPWO2021033542A1 (en) 2021-02-25
TW202111796A (en) 2021-03-16

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