CN114216869B - Wafer doping detection system and detection method - Google Patents
Wafer doping detection system and detection method Download PDFInfo
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- CN114216869B CN114216869B CN202111216939.8A CN202111216939A CN114216869B CN 114216869 B CN114216869 B CN 114216869B CN 202111216939 A CN202111216939 A CN 202111216939A CN 114216869 B CN114216869 B CN 114216869B
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- 238000001514 detection method Methods 0.000 title claims abstract description 58
- 239000000523 sample Substances 0.000 claims abstract description 200
- 238000001228 spectrum Methods 0.000 claims abstract description 32
- 238000012360 testing method Methods 0.000 claims description 22
- 238000012546 transfer Methods 0.000 claims description 19
- 230000003595 spectral effect Effects 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 238000001819 mass spectrum Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 64
- 230000000694 effects Effects 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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Abstract
The disclosure provides a wafer doping detection system and a detection method, and belongs to the technical field of semiconductors. The wafer doping detection system comprises a vacuum sample bin, a laser probe, spectrum collection equipment and a processor, wherein the laser probe and the spectrum collection equipment are positioned in the vacuum sample bin; the vacuum sample bin is used for providing a vacuum environment for sample doping concentration detection; the laser probe is used for emitting laser to reach the surface of the sample when the doping concentration of the sample is detected; the spectrum collection device is used for collecting laser reflected by the sample, acquiring a bound exciton signal and a free exciton signal according to the reflected laser, and transmitting the bound exciton signal and the free exciton signal to the processor; the processor is used for determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal sent by the spectrum collecting device. By adopting the wafer doping detection system provided by the disclosure, the doping concentration and the doping type of the wafer can be accurately detected.
Description
Technical Field
The disclosure relates to the field of semiconductor technology, and in particular, to a wafer doping detection system and a detection method.
Background
In gallium nitride-based photoelectric semiconductor technology, N-type doping and P-type doping are usually realized by using Mg and Si doping, related products of large-scale mass production are used for designing light-emitting diodes, lasers, power devices and the like, the designed doping amount is consistent with the actual doping amount, and how the stability of the actual doping amount has great influence on the operation and the use of the device. Therefore, the testing means for convenient and fast testing is more critical.
The conventional characterization means at present is sims (secondary electron mass spectrum), but the test means has high requirements on equipment, needs a professional characterization part to test, has long test period and high test cost, and needs ion etching to realize when testing signals with different depths, when ion bombardment, part of high-concentration elements of a sample can be pushed into a low-concentration element doped layer to influence the judgment of thickness accuracy, and meanwhile, the surface analysis is difficult to accurately perform due to surface effect when analyzing the element concentration of an epitaxial layer with a thinner surface, and finally, the doping concentration and the doping type of a wafer are difficult to accurately measure.
Disclosure of Invention
The embodiment of the disclosure provides a wafer doping detection system and a detection method, which can accurately detect the doping concentration and the doping type of a wafer. The technical scheme is as follows:
in a first aspect, a wafer doping detection system is provided, the wafer doping detection system is used for detecting doping concentration and doping type of a sample, and the sample is a wafer;
the wafer doping detection system comprises a vacuum sample bin, a laser probe, spectrum collection equipment and a processor, wherein the laser probe and the spectrum collection equipment are positioned in the vacuum sample bin;
the vacuum sample bin is used for providing a vacuum environment for the sample;
the laser probe is used for emitting laser to the surface of the sample;
The spectrum collection equipment is used for collecting laser reflected by the sample, acquiring a bound exciton signal and a free exciton signal according to the reflected laser, and sending the bound exciton signal and the free exciton signal to the processor;
The processor is used for determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal sent by the spectrum collection device.
Optionally, the processor is configured to:
And determining the doping type of the sample according to the peak position of the bound exciton signal, wherein the doping type of the sample comprises N-type doping and P-type doping.
Optionally, the processor is configured to:
extracting a first spectral intensity data parameter from the bound exciton signal;
extracting a second spectral intensity data parameter from the free exciton signal;
acquiring the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter;
inputting the ratio into a doping concentration database, and determining the doping concentration of the sample through an internal interpolation method operation;
The doping concentration database is pre-stored in the processor, and a partial relation curve of the ratio and the doping concentration is pre-stored in the doping concentration database.
Optionally, the wafer doping detection system further comprises a mechanically moving stage located in the vacuum sample bin, wherein the mechanically moving stage is used for controlling the sample to rotate in the vacuum sample bin or move in the horizontal direction and the vertical direction.
Optionally, the wafer doping detection system further includes a cooling device located in the vacuum sample bin, where the cooling device is configured to cool the vacuum sample bin.
Optionally, the wafer doping detection system further comprises a first vacuumizing device and a first inflating device which are positioned in the vacuum sample bin;
The first vacuumizing equipment is used for vacuumizing the vacuum sample bin;
The first inflation equipment is used for inflating the vacuum sample bin.
Optionally, the wafer doping detection system further comprises a sample transfer bin, wherein a second vacuumizing device and a second inflating device are arranged in the sample transfer bin;
The sample transfer bin is used for providing an environment for removing impurities for the sample;
The second vacuumizing equipment is used for vacuumizing the sample transmission bin;
The second inflation device is used for inflating the sample transmission bin.
In a second aspect, a wafer doping detection method is provided, where the wafer doping detection method adopts the wafer doping detection system according to the first aspect, and the wafer doping detection method includes:
providing a sample, wherein the sample is a wafer;
placing the sample into the vacuum sample bin;
Emitting laser light to the sample surface;
Collecting laser reflected by the sample, and acquiring a bound exciton signal and a free exciton signal according to the reflected laser;
And determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal.
Optionally, the determining the doping type of the sample according to the bound exciton signal and the free exciton signal includes:
And determining the doping type of the sample according to the peak position of the bound exciton signal, wherein the doping type of the sample comprises N-type doping and P-type doping.
Optionally, the determining the doping concentration of the sample according to the bound exciton signal and the free exciton signal comprises:
extracting a first spectral intensity data parameter from the bound exciton signal;
extracting a second spectral intensity data parameter from the free exciton signal;
acquiring the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter;
inputting the ratio into a doping concentration database, and determining the doping concentration of the sample through an internal interpolation method operation;
wherein, the doping concentration database is pre-stored with a partial relation curve of the ratio and the doping concentration.
The technical scheme provided by the embodiment of the disclosure has the beneficial effects that:
The wafer doping detection system provided by the embodiment of the disclosure can detect the doping concentration and the doping type of the wafer. The wafer is irradiated by laser in the vacuum sample bin, then laser reflected by the wafer is collected, and a bound exciton signal and a free exciton signal are obtained according to the reflected laser. And finally, determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal. The detection system does not need to carry out ion etching on the wafer, can rapidly and conveniently determine the doping type and the doping concentration of the sample, cannot be negatively influenced by surface effect and passive diffusion introduction of elements, and has low cost and can be applied to large-scale test analysis.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a block diagram of a wafer doping detection system provided in an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of peak positions of a tethered exciton signal provided by an embodiment of the disclosure;
FIG. 3 is a graph of a ratio versus doping concentration for one embodiment of the present disclosure;
Fig. 4 is a flowchart of a wafer doping detection method according to an embodiment of the present disclosure;
fig. 5 is a flowchart of another wafer doping detection method according to an embodiment of the present disclosure.
Detailed Description
For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.
The disclosed embodiments provide a wafer doping detection system 100 for detecting doping concentration and doping type of a sample, which is a wafer.
Fig. 1 is a block diagram of a wafer doping detection system according to an embodiment of the present disclosure, and as shown in fig. 1, the wafer doping detection system 100 includes a vacuum sample chamber 10, a laser probe 20, a spectrum collection device 30, and a processor 40, where the laser probe 20 and the spectrum collection device 30 are located in the vacuum sample chamber 10;
a vacuum sample compartment 10 for providing a vacuum environment for a sample;
A laser probe 20 for emitting laser light to the sample surface;
The spectrum collection device 30 is used for collecting laser reflected by the sample, acquiring bound exciton signals and free exciton signals according to the reflected laser, and sending the bound exciton signals and the free exciton signals to the processor;
The processor 40 is configured to determine the doping type and doping concentration of the sample based on the bound exciton signal and the free exciton signal sent by the spectrum collection device.
The wafer doping detection system provided by the embodiment of the disclosure can detect the doping concentration and the doping type of the wafer. The wafer is irradiated by laser in the vacuum sample bin, then laser reflected by the wafer is collected, and a bound exciton signal and a free exciton signal are obtained according to the reflected laser. And finally, determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal. The detection system does not need to carry out ion etching on the wafer, can rapidly and conveniently determine the doping type and the doping concentration of the sample, cannot be negatively influenced by surface effect and element passive diffusion, has low cost and can be applied to large-scale test analysis.
Optionally, the processor 40 is configured to:
And determining the doping type of the sample according to the peak position of the bound exciton signal, wherein the doping type of the sample comprises N-type doping and P-type doping.
In the embodiment of the disclosure, the N-type doping may be Si doping and the P-type doping may be Mg doping.
In one implementation of the disclosed embodiments, the peak position of the bound exciton signal is related to the photon energy and PL (Photoluminescence intensity ).
Fig. 2 is a schematic diagram of peak positions of a bound exciton signal provided in an embodiment of the disclosure, as shown in fig. 2, in which the abscissa represents photon energy, which can be obtained by wavelength calculation, and the ordinate represents PL intensity. At this time, when the peak position of the bound exciton signal is located at the ABE position in the figure, it means that the doping type of the sample is P-type doping, such as Mg doping, or the like. When the peak position of the bound exciton signal is located at the DBE position in the figure, the doping type of the sample is N-type doping, such as Si doping, etc.
Optionally, the processor 40 is configured to:
extracting a first spectral intensity data parameter from the bound exciton signal;
extracting a second spectral intensity data parameter from the free exciton signal;
Acquiring the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter;
inputting the ratio into a doping concentration database, and determining the doping concentration of the sample through an internal interpolation method operation;
The doping concentration database is pre-stored in the processor, and a partial relation curve of the ratio and the doping concentration is pre-stored in the doping concentration database.
In one implementation of the disclosed embodiments, the ratio and doping concentration in the doping concentration database may be generated by pre-acquiring relevant data.
Fig. 3 is a graph of a ratio versus doping concentration, as shown in fig. 3, with the abscissa representing doping concentration and the ordinate representing ratio, provided in an embodiment of the present disclosure. Wherein curve I represents the linear relationship of the ratio to the P-type doping concentration and curve II represents the linear relationship of the ratio to the N-type doping concentration. Each triangle in the figure represents the point value of the corresponding P-type doping concentration at each ratio, and each diamond represents the point value of the corresponding N-type doping concentration at each ratio.
In one implementation of the disclosed embodiments, the ratio of the first spectral intensity data parameter to the second spectral intensity data parameter may establish a linear correspondence with sims test results, and then for an unknown sample test, the doping amount may be found according to the established linear correspondence.
In embodiments of the present disclosure, processor 40 may also display the determined sample doping concentration via an image.
Optionally, the wafer doping detection system further includes a mechanically moving stage 50 located within the vacuum sample chamber 10. The mechanically moving stage 50 is used to control the rotation of the sample within the vacuum sample chamber 10, or movement in the horizontal and vertical directions.
By providing the mechanical moving stage 50, the wafer can be driven to move, and doping detection at each position of the wafer can be realized.
It should be noted that, in the embodiment of the present disclosure, the position of the laser probe 20 is unchanged, and the wafer may be moved by mechanically moving the stage 50. When a plurality of wafers need to be tested, the plurality of wafers can be placed in the tray, and then the tray is driven to move by the mechanical moving object stage 50 so as to test the plurality of wafers in sequence.
Alternatively, the mechanically movable stage 50 may be moved according to the wafer size, and the unit of movement per movement may be 3um to 50um. The processor can input doping information according to the position in the epitaxial wafer size modeled by the software and output graphic display, the doping information and the thickness information are overlapped in the graphic display, and the numerical value of the doping concentration of the element is added on the basis of the thickness contrast.
Optionally, the wafer doping detection system further includes a cooling device 60, where the cooling device 60 is configured to cool the vacuum sample chamber. By arranging the cooling device 60, the sample can be ensured not to be affected by temperature in the detection process.
Optionally, the wafer doping detection system further comprises a first vacuum pumping device 71 and a first gas filling device 72 located within the vacuum sample chamber 10.
A first vacuumizing device 71 for vacuumizing the vacuum sample chamber 10;
A first inflation device 72 for inflating the interior of the vacuum sample cartridge 10.
By providing the first vacuuming means 71 and the first inflating means 72 it is ensured that the pressure in the vacuum sample compartment 10 is of a magnitude that meets the test requirements.
Optionally, the wafer doping detection system further includes a sample delivery bin 80, and the sample delivery bin 10 has a second vacuum pumping device 91 and a second air charging device 92 therein.
A sample transfer bin 80 for providing an environment for sample removal of impurities;
A second evacuating device 91 for evacuating the sample transfer chamber 80;
A second inflation device 92 for inflating the sample delivery cartridge 80.
In the disclosed embodiment, the sample may be placed in the sample delivery cartridge 80 prior to testing the sample, and then the pressure in the sample delivery cartridge 80 may be controlled using the second vacuuming device 91 and the second aerating device 92 to remove impurities from the surface of the sample. The sample is then transferred from the sample transfer well 80 into the vacuum sample well 10.
Illustratively, a manipulator is disposed within both the vacuum sample compartment 10 and the sample transfer compartment 80, through which movement and transfer of samples can be accomplished.
Fig. 4 is a flowchart of a wafer doping detection method according to an embodiment of the disclosure, as shown in fig. 4, the wafer doping detection method includes:
step 201, a sample is provided.
In an embodiment of the present disclosure, the sample is a wafer.
Step 202, placing a sample into a vacuum sample bin.
Step 203, emitting laser to the sample surface.
Step 204, collecting laser reflected by the sample, and acquiring a bound exciton signal and a free exciton signal according to the reflected laser.
Step 205, determining the doping type and doping concentration of the sample according to the bound exciton signal and the free exciton signal.
The wafer doping detection system provided by the embodiment of the disclosure can detect the doping concentration and the doping type of the wafer. The wafer is irradiated by laser in the vacuum sample bin, then laser reflected by the wafer is collected, and a bound exciton signal and a free exciton signal are obtained according to the reflected laser. And finally, determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal. The detection system does not need to carry out ion etching on the wafer, can rapidly and conveniently determine the doping type and the doping concentration of the sample, cannot be negatively influenced by surface effect and element passive diffusion, has low cost and can be applied to large-scale test analysis.
Fig. 5 is a flowchart of another wafer doping detection method according to an embodiment of the disclosure, as shown in fig. 5, the wafer doping detection method includes:
Step 301, providing a sample.
In an embodiment of the present disclosure, the sample is a wafer.
And 302, placing the sample into a sample transfer bin, controlling the sample transfer bin to perform air suction and restarting, and performing multiple circulation to be in a normal pressure state.
In the disclosed embodiment, the pressure is approximately 10 -4-10-8 Pa when the sample delivery cartridge is at atmospheric pressure. Through putting the sample into the sample transmission storehouse earlier, can get rid of the impurity on sample surface, prevent that follow-up sample from causing the influence to its measuring result in the measurement process.
Step 303, placing the sample into a vacuum sample bin.
In the embodiment of the disclosure, the vacuum sample bin and the sample transfer bin are both internally controlled by a manipulator, the sample table is in a tray-shaped design, and the tray is in a multi-piece pocket design, so that multi-piece tests can be sequentially performed.
And 304, pumping the vacuum sample bin to a low pressure state.
Illustratively, in the low pressure state, the pressure within the vacuum sample chamber is 1E-4 to 1E-6pa.
And 305, adopting a cooling system to cool the vacuum sample bin.
Wherein the temperature in the vacuum sample chamber is reduced to 20K-80K. At this time, the temperature can be prevented from affecting the detection of the doping concentration of the sample.
Step 306, emitting laser to the sample surface.
Step 307, collecting the laser reflected by the sample, and obtaining the bound exciton signal and the free exciton signal according to the reflected laser.
Step 308, determining the doping type and doping concentration of the sample according to the bound exciton signal and the free exciton signal.
In the embodiment of the disclosure, the N-type doping may be Si doping and the P-type doping may be Mg doping.
Illustratively, step 308 may include:
And determining the doping type of the sample according to the peak position of the bound exciton signal, wherein the doping type of the sample comprises N-type doping and P-type doping.
In one implementation of the disclosed embodiments, the peak position of the bound exciton signal is related to the photon energy and PL (Photoluminescence intensity ). See in particular the description above in relation to fig. 2.
Illustratively, step 308 may further comprise:
extracting a first spectral intensity data parameter from the bound exciton signal;
extracting a second spectral intensity data parameter from the free exciton signal;
Acquiring the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter;
inputting the ratio into a doping concentration database, and determining the doping concentration of the sample through an internal interpolation method operation;
Wherein, the doping concentration database is pre-stored with partial relation curve of the ratio and the doping concentration.
In one implementation of the disclosed embodiments, the ratio and doping concentration in the doping concentration database may be generated by pre-acquiring relevant data.
In one implementation of the disclosed embodiments, the ratio of the first spectral intensity data parameter to the second spectral intensity data parameter may establish a linear correspondence with sims test results, and then for an unknown sample test, the doping amount may be found according to the established linear correspondence.
Optionally, the wafer doping detection method further includes:
After the test is completed, the temperature in the vacuum sample chamber 10 is raised so that the sample is warmed to room temperature. The vacuum sample chamber 10 is controlled to be inflated to normal pressure, samples are transferred from the vacuum sample chamber 10 to the sample transfer chamber 80, and the samples are taken out.
The wafer doping detection system provided by the embodiment of the disclosure can detect the doping concentration and the doping type of the wafer. The wafer is irradiated by laser in the vacuum sample bin, then laser reflected by the wafer is collected, and a bound exciton signal and a free exciton signal are obtained according to the reflected laser. And finally, determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal. The detection system does not need to carry out ion etching on the wafer, can rapidly and conveniently determine the doping type and the doping concentration of the sample, cannot be negatively influenced by surface effect and element passive diffusion, has low cost and can be applied to large-scale test analysis.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," "third," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, is intended to mean that elements or items that are present in front of "comprising" or "comprising" are included in the word "comprising" or "comprising", and equivalents thereof, without excluding other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "top", "bottom" and the like are used only to indicate relative positional relationships, which may be changed accordingly when the absolute position of the object to be described is changed.
While the present disclosure has been described above by way of example, and not by way of limitation, any person skilled in the art will recognize that many modifications, adaptations, and variations of the present disclosure can be made to the present embodiments without departing from the scope of the present disclosure.
Claims (5)
1. The wafer doping detection system is characterized by being used for detecting the doping concentration and the doping type of a sample, wherein the sample is a wafer;
The wafer doping detection system comprises a vacuum sample bin, a laser probe, a first vacuumizing device, a first inflating device, a sample transfer bin, a mechanical moving object table, a spectrum collection device and a processor, wherein the sample transfer bin is internally provided with a second vacuumizing device and a second inflating device, mechanical hands are arranged in the vacuum sample bin and the sample transfer bin, and the laser probe, the first vacuumizing device, the first inflating device, the mechanical moving object table and the spectrum collection device are positioned in the vacuum sample bin;
the vacuum sample bin is used for providing a vacuum environment for the sample;
the laser probe is used for emitting laser to the surface of the sample;
The first vacuumizing equipment is used for vacuumizing the vacuum sample bin;
the first inflation equipment is used for inflating the vacuum sample bin;
the manipulator is used for controlling the movement and the transfer of the sample;
The mechanical moving object stage is used for controlling a plurality of samples placed in the tray to rotate in the vacuum sample bin or move in the horizontal direction and the vertical direction, the mechanical moving object stage moves according to the size of the samples, the moving unit of each movement of the mechanical moving object stage is 3-50 mu m, and the tray comprises a plurality of pockets;
The sample transfer bin is used for providing an environment for removing impurities for the sample;
The second vacuumizing equipment is used for vacuumizing the sample transmission bin;
the second inflation device is used for inflating the sample transmission bin;
the second vacuumizing equipment and the second inflating equipment are used for circularly vacuumizing and inflating for a plurality of times when the sample is positioned in the sample transmission bin, so that the pressure in the sample transmission bin is 10 -4-10-8 Pa;
The spectrum collection equipment is used for collecting laser reflected by the sample, acquiring a bound exciton signal and a free exciton signal according to the reflected laser, and sending the bound exciton signal and the free exciton signal to the processor;
The processor is used for determining the doping type and the doping concentration of the sample according to the bound exciton signal and the free exciton signal sent by the spectrum collection device, wherein the processor is used for determining the doping concentration by adopting the following modes:
extracting a first spectral intensity data parameter from the bound exciton signal;
extracting a second spectral intensity data parameter from the free exciton signal;
acquiring the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter;
And establishing a linear corresponding relation between the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter and the test result of the secondary ion mass spectrum, and determining the doping concentration of the sample according to the linear corresponding relation.
2. The wafer doping detection system of claim 1, wherein the processor is configured to:
And determining the doping type of the sample according to the peak position of the bound exciton signal, wherein the doping type of the sample comprises N-type doping and P-type doping.
3. The wafer doping detection system of claim 1 or 2, further comprising a cooling device located within the vacuum sample chamber, the cooling device configured to cool the vacuum sample chamber.
4. A wafer doping detection method, wherein the wafer doping detection method employs the wafer doping detection system according to any one of claims 1 to 3, the wafer doping detection method comprising:
providing a sample, wherein the sample is a wafer;
placing the sample into a sample transmission bin, and circularly vacuumizing and inflating for a plurality of times to enable the pressure in the sample transmission bin to be 10 -4-10-8 Pa;
the method comprises the steps that a sample is placed in a vacuum sample bin, mechanical arms are arranged in the vacuum sample bin and the sample transfer bin, the mechanical arms are used for controlling movement and transfer of the sample, a mechanical moving object table is arranged in the vacuum sample bin and used for controlling a plurality of samples placed in a tray to rotate in the vacuum sample bin or move in the horizontal direction and the vertical direction, the mechanical moving object table moves according to the size of the sample, the moving unit of each movement of the mechanical moving object table is 3-50 mu m, and the tray comprises a plurality of pockets;
Emitting laser light to the sample surface;
Collecting laser reflected by the sample, and acquiring a bound exciton signal and a free exciton signal according to the reflected laser;
Determining the doping type and doping concentration of the sample according to the bound exciton signal and the free exciton signal, wherein the doping concentration is determined by adopting the following mode:
extracting a first spectral intensity data parameter from the bound exciton signal;
extracting a second spectral intensity data parameter from the free exciton signal;
acquiring the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter;
And establishing a linear corresponding relation between the ratio of the first spectrum intensity data parameter to the second spectrum intensity data parameter and the test result of the secondary ion mass spectrum, and determining the doping concentration of the sample according to the linear corresponding relation.
5. The method of claim 4, wherein determining the doping type of the sample from the bound exciton signal and the free exciton signal comprises:
And determining the doping type of the sample according to the peak position of the bound exciton signal, wherein the doping type of the sample comprises N-type doping and P-type doping.
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