CN114214724A - Method for increasing nucleation density of diamond on silicon carbide substrate - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 91
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 82
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 70
- 239000010432 diamond Substances 0.000 title claims abstract description 70
- 238000010899 nucleation Methods 0.000 title claims abstract description 42
- 230000006911 nucleation Effects 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims abstract 2
- 239000000843 powder Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000007788 roughening Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 abstract description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 30
- 238000001878 scanning electron micrograph Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
The application provides a method for increasing nucleation density of diamond on a silicon carbide substrate, the silicon carbide substrate is placed in a growth chamber of MPCVD equipment, and H is introduced2And CH4Before the growth of the diamond film is carried out, the growth surface of the silicon carbide substrate is roughened and cleaned, so that the growth surface of the silicon carbide substrate forms a rough surface, and based on the seed effect, the minimization of the interface energy of a sharp convex surface, the breakage of a surface bond of a sharp edge or the existence of a dangling bond, the strain field effect, the rapid saturation of carbon at a sharp edge and the removal of surface oxide, the nucleation can be effectively enhanced, the nucleation density is improved, and the uniformity is ensured.
Description
Technical Field
The application relates to the technical field of chemical vapor deposition of diamond films, in particular to a method for increasing nucleation density of diamond on a silicon carbide substrate.
Background
Diamond has excellent optical, electrical, mechanical and thermal properties and thus has great application potential. In particular, diamond films have the characteristics of wide band gaps, optical transparency and exceptionally high thermal conductivity, and are ideal semiconductor materials. Has good application prospect in high-tech fields such as high-density integrated circuit packaging materials, protective coatings, electrochemical electrodes and the like. In recent years, research on growing diamond films using a Microwave Plasma Chemical Vapor Deposition (MPCVD) method has received increasing attention because even polycrystalline diamond has a greater advantage than most existing crystals. Particularly, the highest acoustic wave velocity and thermal conductivity driven by high carrier mobility and unique optical characteristics make diamond films ideal materials for many emerging device applications, such as ultra-high frequency acoustic filters, power electronics, integrated optical circuits, and quantum transducers.
Substrates for diamond film growth are silicon (Si), molybdenum (Mo), silicon carbide (SiC), and the like. Since the lattice parameters and structure of the substrate materials associated with diamond are important considerations in determining good film growth, the response of all substrate materials in achieving good film adhesion is not the same. Diamond is lattice matched to beta SiC with a lattice mismatch of about 18.2% (diamond to Si lattice mismatch of 52%). Therefore, when SiC is used as a substrate, nucleation is easier. In addition, the SiC material has small thermal expansion coefficient and high thermal conductivity coefficient, and the characteristics are very similar to those of diamond, so that the adhesion of the diamond film on the SiC substrate is better. Combines the properties of the two materials and has great application potential. However, at present, the research on the nucleation of diamond on the SiC substrate is relatively few, for example, Moore E and the like implement heteroepitaxial diamond on a 4H-SiC substrate by microwave chemical vapor deposition, and the characterization of a diamond film is reported, and the problem that the nucleation density of diamond is low and uneven exists, which affects the subsequent heteroepitaxial quality.
Disclosure of Invention
To solve the above problems, embodiments of the present application provide a method of increasing nucleation density of diamond on a silicon carbide substrate.
The method for increasing the nucleation density of diamond on the silicon carbide substrate provided by the embodiment of the application mainly comprises the following steps:
carrying out roughening treatment on the growth surface of the silicon carbide substrate;
carrying out surface cleaning treatment on the silicon carbide substrate;
placing the silicon carbide substrate in a growth chamber of an MPCVD device, and introducing H2And CH4And growing a diamond film on the growth surface.
Optionally, the roughening treatment is performed on the growth surface of the silicon carbide substrate, and includes:
and grinding the mirror growth surface of the silicon carbide substrate by using diamond micro powder or other processing powder to obtain a rough growth surface.
Optionally, the diameter of the selected diamond micro powder is 2-10 μm; after polishing, the growth surface of the silicon carbide substrate has an arithmetic average roughness Ra of 30 to 100nm and a root mean square roughness Rq of 50to 100 nm.
Optionally, performing a surface cleaning process on the silicon carbide substrate, including:
and sequentially carrying out surface cleaning treatment on the silicon carbide substrate by using acetone, absolute ethyl alcohol and deionized water.
Optionally, introducing H2And CH4Performing diamond film growth, comprising:
the used microwave power is 2000-8000W, and the temperature of the silicon carbide substrate is measured to be 800-1100 ℃ by a double-interference infrared radiation heat pyrometer. H2The flow rate of (C) is about 50to 600sccm, CH4The flow rate of (2) is 1 to 40 sccm.
Alternatively, the H2The flow rate of (C) is 150-300 sccm, and the CH4The flow rate of (2) is 3 to 9 sccm.
Optionally, the CH4The flow rate of (2) was 6 sccm.
According to the method for increasing the nucleation density of diamond on the silicon carbide substrate, the silicon carbide substrate is placed in a growth cavity of MPCVD equipment, and H is introduced2And CH4Before the growth of the diamond film, the growth surface of the silicon carbide substrate is roughened and cleaned to form a rough surface based on seed effect, minimization of sharp convex surface interface energy and breakage or fracture of sharp edge surface bondsThe existence of dangling bonds, strain field effect, rapid carbon saturation at sharp edges and removal of surface oxides can effectively enhance nucleation, improve nucleation density and ensure uniformity.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic flow chart illustrating a basic process for increasing the nucleation density of diamond on a silicon carbide substrate according to an embodiment of the present disclosure;
FIG. 2a is a microscope photograph of a mirror surface C-plane of a SiC substrate provided in an embodiment of the present application;
FIG. 2b is a microscope photograph of a roughened C-plane of a SiC substrate provided by an embodiment of the present application;
FIG. 2C is an SEM image of a mirror surface C of a SiC substrate provided by an embodiment of the present application;
FIG. 2d is an SEM image of a C-plane of a SiC substrate provided by an embodiment of the present application after roughening treatment;
FIG. 3a is an SEM image of a diamond film deposited on a mirror surface C-plane of an SiC substrate at a methane flow rate of 3sccm according to an embodiment of the present application;
FIG. 3b is an SEM image of a diamond film deposited on the C-plane of a mirror surface of a SiC substrate at a methane flow rate of 6sccm according to an embodiment of the present application;
FIG. 3C is an SEM image of a diamond film deposited on the C-plane of a mirror surface of a SiC substrate at a methane flow rate of 9sccm provided by an embodiment of the present application;
FIG. 3d is an SEM image of a diamond film deposited on the C-plane of a mirror surface of a SiC substrate at a methane flow rate of 12sccm provided by an embodiment of the present application;
FIG. 4a is an SEM image of a diamond film deposited on a rough C surface of a SiC substrate at a methane flow rate of 1sccm provided by an embodiment of the present application;
FIG. 4b is an SEM image of a diamond film deposited on a rough C-surface of a SiC substrate at a methane flow rate of 3sccm provided by an embodiment of the application;
FIG. 4C is an SEM image of a diamond film deposited on a rough C-surface of a SiC substrate at a methane flow rate of 6sccm provided by an embodiment of the present application;
FIG. 4d is an SEM image of a diamond film deposited on a rough C-surface of a SiC substrate at a methane flow rate of 9sccm provided by an embodiment of the application;
FIG. 4e is an SEM image of a diamond film deposited on a rough C-surface of a SiC substrate at a methane flow rate of 12sccm provided by an embodiment of the application;
FIG. 5a is a schematic diagram showing diamond nucleation density on a mirror C-plane of a SiC substrate as a function of methane flux, as provided by an embodiment of the present application;
fig. 5b is a schematic diagram of diamond nucleation density on the rough C-plane of the SiC substrate as a function of methane flux, as provided by an embodiment of the present application.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
In the present embodiment, a Microwave Plasma Chemical Vapor Deposition (MPCVD) method is used to perform diamond film Deposition, the principle described in ARDIS-300MPCVD equipment manufactured by russian optisystems is adopted, and other types of equipment can be adopted in the specific implementation process, which is not limited in the present embodiment.
The method provided by the present embodiment will be described in detail below with reference to the accompanying drawings. Fig. 1 is a schematic diagram of a basic flow chart of a method for increasing nucleation density of diamond on a silicon carbide substrate according to the embodiment, and the method mainly comprises the following steps:
s101: and roughening the growth surface of the silicon carbide substrate.
Specifically, the mirror growth surface of the silicon carbide substrate may be polished with diamond fine powder having a diameter of 2 to 10 μm, and after polishing, the growth surface may have an arithmetic average roughness Ra of 30 to 100nm and a root mean square roughness Rq of 50to 100nm, but not limited to this numerical range.
Of course, the roughening treatment is not limited to the above-mentioned manner, and for example, a periodic pss pattern may be prepared in combination with a photolithography process.
S102: and carrying out surface cleaning treatment on the silicon carbide substrate.
Specifically, the silicon carbide substrate may be washed with acetone, absolute ethyl alcohol, and deionized water in this order, but is not limited to this washing method.
S103: placing the silicon carbide substrate in a growth chamber of an MPCVD device, and introducing H2And CH4And growing a diamond film on the growth surface.
In the embodiment, the microwave power is 2000-8000W, the temperature of the silicon carbide substrate is 850-950 ℃ measured by a double-interference infrared radiation heat pyrometer, the substrate temperature is measured by the double-interference infrared radiation heat pyrometer with the emissivity of 0.1 through a 2mm slit, the deposition process is carried out under the pressure of about 150Torr, and H is2The flow rate of (C) is about 100 to 400sccm, CH4The flow rate of (2) is 1 to 20 sccm. Preferably, H2The flow rate of (1) is 150-300 sccm, CH4The flow rate of (2) is 3 to 9 sccm.
Based on the above method, in order to compare the nucleation effects of the present embodiment, the present embodiment designs two substrates, the first is a C-plane mirror surface of the silicon carbide substrate, and the second is a C-plane mirror surface of the silicon carbide substrate, which is polished for 30min by using 4 to 6 μm diamond powder, after polishing, the roughness arithmetic average roughness Ra of the C-plane is 60.7nm, the root mean square roughness Rq is 77.9nm, and as shown in fig. 2a to 2d, the C-plane mirror surface is a C-plane image of the two silicon carbide substrates. Here, the C-plane is taken as an example of a growth plane, but of course, an Si-plane may be used as the growth plane.
The silicon carbide substrate was then placed in the middle of a molybdenum susceptor in a CVD chamber. Before the nucleation step, the sample was washed with absolute ethanol and acetone for 15 min. The microwave power used in the experiment was 4000W, the substrate temperature measured with a double interference infrared bolometer was 900 deg.c, the substrate temperature was measured with a double interference infrared bolometer with emissivity of 0.1 through a 2mm slit. The deposition process was carried out at a pressure of 150 Torr. H2At a flow rate of 150sccm, in order to verify the different CHs4Influence of the flow rate on the nucleation Effect, setting CH4The flow rates of (1 sccm), 3sccm, 6sccm, 9sccm, and 12sccm, respectively. After a 10min nucleation step, the samples were grown for 1h, CH4The flow rate of (2) was 6sccm, and the other conditions were unchanged.
As shown in FIGS. 3a to 3d, the conditions provided for this example were 150Torr in pressure, 4kW in microwave power, 900 ℃ in substrate temperature, and H2The flow rate is selected from one of 145-155 sccm, and in this embodiment, 150sccm is selected for different CH4Under the condition of flow, an SEM image of a diamond film is deposited on the polished surface of the C-mirror surface of the SiC substrate.
As shown in FIGS. 4a to 4e, the conditions for this example were set at a pressure of 150Torr, a microwave power of 4kW, a substrate temperature of 900 ℃ and H2Flow rate of about 150sccm, different CH4Under the condition of flow, an SEM image of a diamond film is deposited on the C-surface grinding surface of the SiC substrate.
Fig. 5 a-5 b show the effect of methane concentration on diamond nucleation density for different silicon carbide substrates provided for this example.
As shown in FIGS. 3 to 5, the nucleation density was very low, 10, on the mirror-polished SiC substrate5cm-2And grinding the silicon carbide substrate by using diamond powder to finally obtain the high-density diamond nucleation. This exampleAnd the diamond nucleation density of the diamond powder grinding sample with the diameter of 4-6 microns on the SiC substrate is higher than that of the untreated mirror SiC substrate by about 3 orders of magnitude. After the nucleation time is 10min, the maximum nucleation density can reach 108cm-2。
As shown in fig. 4a to 4e, as the concentration of methane increases, the shape of the diamond particles changes from irregular shape to triangle and square, the area ratio of the square section to the triangle increases significantly, and clustering occurs again, which affects the nucleation uniformity. This is because, when the methane concentration is too high, if the carbon source concentration in the plasma is too high while the substrate is already covered with part of the diamond grains, some carbon groups adhere to the already nucleated grains, resulting in occurrence of grain clusters. According to the comparison of fig. 4, the roughness arithmetic average roughness Ra of the C-plane is 60.7nm, the root mean square roughness Rq is 77.9nm, H2Nucleation uniformity was best when the flow rate was about 150sccm and methane was 6 sccm.
In the embodiment, after the C surface of the silicon carbide substrate is roughened, nucleation can be effectively enhanced based on seed effect, minimization of sharp convex surface interface energy, breaking of sharp edge surface bonds or presence of dangling bonds, strain field effect, rapid saturation of carbon at sharp edges (rapid formation of carbides), and removal of surface oxides. Meanwhile, the diamond powder grinding mode adopted in the embodiment of the application causes scratches on the silicon carbide substrate, so that the appearance of the surface of the substrate is changed, and defects such as edges, steps, dislocation and the like are generated. These defect regions are used as chemically active sites. They are more prone to adsorb diamond precursors due to the high density of unsaturated bonds and lower coordination numbers at the high energy interface. In the embodiment of the application, the nucleation density of diamond of the SiC substrate ground by 4-6 microns of diamond powder is higher than that of the untreated mirror SiC substrate by about 3 orders of magnitude, and after the nucleation time is 10min, the maximum nucleation density can reach 108cm-2Pretreatment of the SiC substrate has also proven to be an effective prerequisite for good nucleation.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (7)
1. A method of increasing the nucleation density of diamond on a silicon carbide substrate, the method comprising:
carrying out roughening treatment on the growth surface of the silicon carbide substrate;
carrying out surface cleaning treatment on the silicon carbide substrate;
placing the silicon carbide substrate in a growth chamber of an MPCVD device, and introducing H2And CH4And growing a diamond film on the growth surface.
2. A method of increasing the nucleation density of diamond on a silicon carbide substrate according to claim 1, wherein roughening the growth surface of the silicon carbide substrate comprises:
and grinding the mirror growth surface of the silicon carbide substrate by using diamond micro powder or other processing powder to obtain a rough growth surface.
3. The method for increasing the nucleation density of diamond on a silicon carbide substrate according to claim 2, wherein the diameter of the diamond micropowder is 2-10 μm; after polishing, the growth surface of the silicon carbide substrate has an arithmetic average roughness Ra of 30 to 100nm and a root mean square roughness Rq of 50to 100 nm.
4. A method of increasing the nucleation density of diamond on a silicon carbide substrate according to claim 1, wherein the silicon carbide substrate is subjected to a surface cleaning process comprising:
and sequentially carrying out surface cleaning treatment on the silicon carbide substrate by using acetone, absolute ethyl alcohol and deionized water.
5. A method of increasing the nucleation density of diamond on a silicon carbide substrate according to claim 1, wherein H is bubbled through2And CH4Performing diamond film growth, comprising:
the used microwave power is 2000-8000W, the temperature of the silicon carbide substrate is measured by a double-interference infrared radiation heat pyrometer to be 800-2The flow rate of (C) is about 50to 600sccm, CH4The flow rate of (2) is 1 to 40 sccm.
6. A method of increasing the nucleation density of diamond on a silicon carbide substrate according to claim 5, wherein the H2The flow rate of (C) is 150-300 sccm, and the CH4The flow rate of (2) is 3 to 9 sccm.
7. The method of increasing nucleation density of diamond on a silicon carbide substrate according to claim 5, wherein said CH4The flow rate of (2) was 6 sccm.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1045815A (en) * | 1989-09-29 | 1990-10-03 | 吉林大学 | The selective vapor growth of diamond film |
| CN1442507A (en) * | 2002-03-06 | 2003-09-17 | 中国科学院物理研究所 | Method of preparing (001) high orientation diamond film using H cation etching diamond nuclear |
| CN1616708A (en) * | 2004-11-19 | 2005-05-18 | 中国科学院物理研究所 | Diamond cone tip and its making method |
| CN102102220A (en) * | 2009-12-22 | 2011-06-22 | 中国科学院物理研究所 | Preparation method of graphene on diamond (111) surface |
| JP2019002033A (en) * | 2017-06-12 | 2019-01-10 | 国立大学法人東京工業大学 | Diamond-like carbon film structure, and production method thereof |
-
2021
- 2021-11-10 CN CN202111326024.2A patent/CN114214724A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1045815A (en) * | 1989-09-29 | 1990-10-03 | 吉林大学 | The selective vapor growth of diamond film |
| CN1442507A (en) * | 2002-03-06 | 2003-09-17 | 中国科学院物理研究所 | Method of preparing (001) high orientation diamond film using H cation etching diamond nuclear |
| CN1616708A (en) * | 2004-11-19 | 2005-05-18 | 中国科学院物理研究所 | Diamond cone tip and its making method |
| CN102102220A (en) * | 2009-12-22 | 2011-06-22 | 中国科学院物理研究所 | Preparation method of graphene on diamond (111) surface |
| JP2019002033A (en) * | 2017-06-12 | 2019-01-10 | 国立大学法人東京工業大学 | Diamond-like carbon film structure, and production method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JOUNGCHEL LEE等: "Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasma-enhanced chemical vapor deposition on silicon substrates", 《APPLIED PHYSICS LETTERS》 * |
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