CN114212796B

CN114212796B - Silicon material treatment device and silicon material treatment method

Info

Publication number: CN114212796B
Application number: CN202111674694.3A
Authority: CN
Inventors: 邓浩; 韩伟; 董升; 李侨
Original assignee: Longi Green Energy Technology Co Ltd
Current assignee: Longi Green Energy Technology Co Ltd
Priority date: 2021-12-31
Filing date: 2021-12-31
Publication date: 2024-01-30
Anticipated expiration: 2041-12-31
Also published as: CN114212796A

Abstract

The embodiment of the invention provides a silicon material processing device and a silicon material processing method, wherein the silicon material processing device comprises: the device comprises a conveying mechanism for driving silicon materials to move along a preset conveying path, and a processing cavity and a cleaning mechanism which are sequentially arranged along the preset conveying path, wherein a heating mechanism is arranged in the processing cavity and used for adjusting the temperature in the processing cavity, and an air inlet for inputting reaction gas is also arranged in the processing cavity, and the reaction gas at least comprises halogen-containing gas; under the condition that the heating mechanism adjusts the temperature in the processing cavity to a first preset temperature, the air inlet can introduce reaction gas into the processing cavity so as to enable halogen-containing gas in the reaction gas to react with metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material. According to the embodiment of the invention, a large amount of chemical reagents can be avoided, the cost for treating the silicon materials is saved, the environmental protection pressure is reduced, and the treatment device can treat the silicon materials with different sizes.

Description

Silicon material treatment device and silicon material treatment method

Technical Field

The invention relates to the technical field of single crystal manufacturing, in particular to a silicon material treatment device and a silicon material treatment method.

Background

In recent years, photovoltaic power generation is increasingly being regarded as one of green energy and main energy for sustainable development of human beings, and is being greatly developed by people in various countries around the world. Monocrystalline silicon wafers have a wide market demand as a base material for photovoltaic power generation. Monocrystalline silicon wafers are typically sliced from silicon rods, which are typically grown from silicon feedstock.

In practical applications, the silicon material may be virgin polysilicon or redraw material, and in order to reduce environmental pressure in the prior art, before the silicon rod is drawn by using the silicon material, the silicon material is usually cleaned by using an acid solution or an alkaline solution to remove impurities such as metals and metal compounds mixed in the silicon material.

However, when the silicon material is cleaned by using the chemical reagents such as the acid solution or the alkaline solution, the use amount of the chemical reagents such as the acid solution or the alkaline solution is large, so that the cleaning cost of the silicon material is high, and the environmental protection pressure is high; moreover, the quality of the silicon rod produced by the cleaned silicon material is still difficult to meet the requirement of increasingly improving the high quality (crystallization rate/conversion efficiency) of the silicon rod.

Disclosure of Invention

In view of the foregoing, embodiments of the present invention have been made to provide a silicon material processing apparatus and a silicon material processing method that overcome or at least partially solve the foregoing problems.

In order to solve the above problems, in a first aspect, an embodiment of the present invention discloses a processing apparatus for silicon material, including: the conveying mechanism is used for driving the silicon material to move along a preset conveying path, and the processing cavity and the cleaning mechanism are sequentially arranged along the preset conveying path,

the processing chamber is internally provided with a heating mechanism which is used for adjusting the temperature in the processing chamber, and is internally provided with an air inlet for inputting reaction gas, wherein the reaction gas at least comprises halogen-containing gas;

and under the condition that the heating mechanism adjusts the temperature in the processing cavity to a first preset temperature, the air inlet can introduce the reaction gas into the processing cavity so as to enable the halogen-containing gas in the reaction gas to react with metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material.

Optionally, the processing cavity is sequentially provided with a first inlet and a first outlet for penetrating the conveying mechanism along the preset conveying path;

the processing chamber is also provided with a first gate for sealing the first inlet and a second gate for sealing the first outlet.

Optionally, the cleaning mechanism comprises at least two spraying mechanisms for spraying cleaning liquid to the silicon material, and at least two cleaning tanks which are arranged corresponding to the spraying mechanisms;

the at least two spraying mechanisms are sequentially arranged along the preset conveying path, one cleaning tank is correspondingly arranged below one spraying mechanism, and the cleaning tank is used for recovering the corresponding cleaning liquid sprayed to the silicon material by the spraying mechanism.

Optionally, the cleaning solution includes: at least one of lactic acid, hydrofluoric acid and nitric acid.

Optionally, the processing device further comprises a drying mechanism, and the drying mechanism is arranged on the preset conveying path;

the drying mechanism is connected to one side, far away from the processing cavity, of the cleaning mechanism, and the drying mechanism is used for drying the cleaned silicon material.

Optionally, the drying mechanism includes: stoving case and heating piece, the stoving case connect in the wiper mechanism keep away from one side of handling the chamber, the heating piece is located stoving incasement, the heating piece is used for adjusting the temperature in the stoving case the heating piece will under the condition that the temperature in the stoving case was adjusted to the second and is predetermine the temperature, the stoving case can be used to dry the silicon material.

Optionally, the drying box is sequentially provided with a second inlet and a second outlet for penetrating the conveying mechanism along the preset conveying path;

the drying box is also provided with a third gate for sealing the second inlet and a fourth gate for sealing the second outlet.

Optionally, the transport mechanism comprises a driving member, a conveying member and a carrying tray for placing the silicon material;

the driving piece is connected with the conveying piece, the conveying piece is connected with the bearing plate, the driving piece is used for driving the conveying piece to move along the preset conveying path, and the movement of the conveying piece drives the silicon material in the bearing plate to move along the preset conveying path.

Optionally, the material of the bearing disc includes: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide.

Optionally, the processing device further comprises a transparent window, and a through hole is arranged on the side wall of the processing cavity;

the transparent window is embedded in the through hole.

Optionally, the halogen-containing gas includes: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon;

the reaction gas further includes an inert gas including: at least one of nitrogen, argon and helium.

Optionally, the first preset temperature is 700 ℃ to 1300 ℃.

In a second aspect, the embodiment of the invention also discloses a method for processing silicon materials, which comprises the following steps:

controlling the conveying mechanism to drive the silicon material to enter the processing cavity along a preset conveying path;

a heating mechanism is adopted to adjust the temperature in the processing cavity to a first preset temperature;

inputting a reaction gas at least comprising halogen-containing gas into the processing cavity through a gas inlet so as to enable the halogen-containing gas to react with metal impurities in the silicon material;

controlling the conveying mechanism to drive the silicon material to enter the cleaning mechanism;

and cleaning the reacted silicon material by adopting the cleaning mechanism.

Optionally, before the step of adjusting the temperature in the processing chamber to a first preset temperature by using a heating mechanism, the method includes:

and inputting inert gas into the processing cavity through a gas inlet so as to replace air in the processing cavity by the inert gas.

Optionally, the step of inputting a reaction gas including at least a halogen-containing gas into the processing chamber through a gas inlet so as to react the halogen-containing gas with metal impurities in the silicon material includes:

inputting the reaction gas at least comprising halogen-containing gas into the processing cavity through the gas inlet;

Maintaining for 5-120 minutes at the first preset temperature to react the halogen-containing gas with metal impurities in the silicon feedstock;

an inert gas is introduced into the process chamber through the gas inlet to cool the temperature within the process chamber.

Optionally, after the step of cleaning the reacted silicon material with the cleaning mechanism, the method further includes:

controlling the conveying mechanism to drive the silicon material to enter the drying mechanism;

and drying the cleaned silicon material by adopting the drying mechanism.

The embodiment of the invention has the following advantages:

in the embodiment of the invention, the conveying mechanism can drive the silicon material to move along the preset conveying path and sequentially pass through the processing cavity and the cleaning mechanism on the conveying path. Specifically, the transportation mechanism can drive the silicon material to enter the processing cavity first, the heating device can adjust the temperature in the processing cavity to a first preset temperature first, and then the reaction gas can be introduced into the processing cavity through the gas inlet, so that the halogen-containing gas in the reaction gas can react with the metal impurities in the silicon material, and the metal impurities are separated from the silicon material, so that the purity of the silicon material is improved. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, and impurities in the silicon material are further removed, so that the silicon material with higher purity is obtained. In the embodiment of the invention, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the treatment cost is saved, and the environmental protection pressure is reduced; in addition, the metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment device can be directly put into a furnace for use without special treatment or changing the process conditions of the production, and the quality of the produced silicon rod is higher; the processing device in the embodiment of the invention can also process silicon materials with different sizes, and has good universality.

Drawings

FIG. 1 is a schematic view of an embodiment of a silicon material processing apparatus according to the present invention;

FIG. 2 is a flow chart of steps of an embodiment of a method for processing a silicon feedstock in accordance with the present invention;

FIG. 3 is a flow chart of steps of another embodiment of a method for processing silicon material according to the present invention.

Reference numerals:

1-conveying mechanism, 11-driving part, 12-conveying part, 13-bearing plate, 2-processing cavity, 21-air inlet, 22-air outlet, 23-first inlet, 24-first outlet, 25-first gate, 26-second gate, 3-cleaning mechanism, 31-spraying mechanism, 32-cleaning tank, 4-heating mechanism, 5-drying mechanism, 51-drying box, 511-second inlet, 512-second outlet, 513-third gate, 514-fourth gate, 52-heating part, 6-transparent window, 7-silicon material.

Detailed Description

In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.

One of the core ideas of the embodiment of the invention is to disclose a silicon material treatment device.

Referring to fig. 1, a schematic structural diagram of an embodiment of a processing apparatus for silicon materials according to the present invention may specifically include: the device comprises a conveying mechanism 1 for driving a silicon material 7 to move along a preset conveying path, and a processing cavity 2 and a cleaning mechanism 3 which are sequentially arranged along the preset conveying path, wherein a heating mechanism 4 is arranged in the processing cavity 2, the heating mechanism 4 is used for adjusting the temperature in the processing cavity 2, an air inlet 21 for inputting reaction gas is also arranged in the processing cavity 2, and the reaction gas at least comprises halogen-containing gas; in the case that the heating mechanism 4 adjusts the temperature in the processing chamber 2 to the first preset temperature, the gas inlet 21 may introduce a reaction gas into the processing chamber 2, so that the halogen-containing gas in the reaction gas reacts with the metal impurities in the silicon material 7, and the cleaning mechanism 3 is used for cleaning the reacted silicon material 7.

In the embodiment of the invention, the conveying mechanism 1 can drive the silicon material 7 to move along a preset conveying path and sequentially pass through the processing cavity 2 and the cleaning mechanism 3 on the conveying path. Specifically, the transport mechanism 1 may drive the silicon material 7 to enter the processing chamber 2, the heating device may adjust the temperature in the processing chamber 2 to a first preset temperature, and then the reaction gas may be introduced into the processing chamber 2 through the gas inlet 21, so that the halogen-containing gas in the reaction gas may react with the metal impurities in the silicon material 7, so that the metal impurities and the silicon material 7 are separated, and the purity of the silicon material 7 is improved. The conveying mechanism 1 can also drive the silicon material 7 to enter the cleaning mechanism 3, so that the cleaning mechanism 3 can clean the reacted silicon material 7, and further remove impurities in the silicon material 7 to obtain the silicon material 7 with higher purity. In the embodiment of the invention, the metal impurities in the silicon material 7 are removed by adopting the reaction gas, and then the impurities in the silicon material 7 are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the cost for processing the silicon material 7 is saved, and the environmental protection pressure is reduced; in addition, the metal impurities in the silicon material 7 can be fully removed, so that the silicon material 7 treated by the treatment device can be directly put into a furnace for use without special treatment or changing the process conditions of the production, and the produced silicon rod has higher quality, higher crystallization rate and higher conversion efficiency; the processing device in the embodiment of the invention can also process silicon materials 7 with different sizes, and has better universality.

Specifically, after the reaction of the silicon material 7, metal compounds, organic impurities, inorganic impurities and the like are easily remained on the surface of the silicon material 7, and the cleaning mechanism 3 can further remove the metal compounds, the organic impurities, the inorganic impurities and the like remained on the surface of the silicon material 7, so as to obtain the silicon material 7 with higher purity.

The silicon material 7 in the embodiment of the invention can be a silicon material for producing silicon rods by the pull system, for example: silicon materials recovered during the production of silicon wafers or silicon rods, and the like. The silicon material 7 in the embodiment of the invention can be large blocks, small-sized crushed aggregates, particles and the like, so that the treatment device in the embodiment of the invention can adapt to a plurality of types of silicon materials 7.

By way of example, the silicon feedstock 7 may be virgin granular polysilicon or re-used redraw feedstock, etc., and the granular polysilicon may have an average grain size of 0.5-4 mm. The redraw material may include: the average grain size of the edge leather material can be 20-80 mm, the average grain size of the slice thick sheet material can be 10-50 mm, and the average grain size of the broken small material can be 3-8 mm.

Specifically, the processing chamber 2 may be provided with a gas inlet 21, and the reaction gas may be introduced into the processing chamber 2 through the gas inlet 21, and in practical applications, the inert gas may be introduced into the processing chamber 2 through the gas inlet 21.

Specifically, the processing chamber 2 may be further provided with an air outlet 22, and air in the processing chamber 2 may be exhausted through the air outlet 22, so that the pressure and the gas composition in the processing chamber 2 may be adjusted. For example, inert gas can be introduced into the processing chamber 2 through the gas inlet 21, and air in the processing chamber 2 can be discharged through the gas outlet 22, so that the inert gas can replace the air in the processing chamber 2, and the reaction of the halogen-containing gas and the metal impurities in the silicon material 7 is avoided.

In the embodiment of the invention, the transport mechanism 1 can comprise a driving structure and a load carrying structure, the driving structure can be connected with the load carrying structure, and the load carrying structure can be used for placing the silicon material 7, so that the driving structure drives the load carrying structure to move, and the movement of the load carrying structure can drive the silicon material 7 to move.

Further, the driving structure can drive the silicon material 7 on the loading structure to move along a preset conveying path, so that the silicon material 7 can be continuously processed, the processing of a large number of silicon materials 7 is facilitated, and the efficiency is high.

Specifically, the driving structure can drive the silicon material 7 on the loading structure to move along a preset conveying path, and the processing cavity 2 and the cleaning mechanism 3 are sequentially arranged along the preset conveying path, so that the silicon material 7 can be sequentially processed through the processing cavity 2 and the cleaning mechanism 3. The preset transmission path may be set according to actual requirements, which is not particularly limited in the embodiment of the present invention.

Specifically, the driving structure may be a motor or an air cylinder, the loading structure may include a conveying member and a carrying disc for placing the silicon material, the driving structure may drive the carrying disc to move through the conveying member, the conveying member may be a chain conveyor, a roller conveyor or a belt conveyor, and the material of the carrying disc may include: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide, to which embodiments of the present invention are not particularly limited.

The processing chamber 2 in the embodiment of the present invention may be provided with a space for placing the heating mechanism 4 and the silicon material 7, so that the silicon material 7 may enter the processing chamber 2 for processing.

The heating mechanism 4 in the embodiment of the present invention is a device for adjusting the temperature in the processing chamber 2, for example, the heating mechanism 4 may be an electromagnetic heater, an infrared heater, a resistive heater, or the like, and the embodiment of the present invention is not limited thereto.

Specifically, in the case where the heating mechanism 4 heats the temperature inside the processing chamber 2 to a first preset temperature, the halogen-containing gas may react with the metal impurities in the silicon material 7 to generate a metal compound having a low boiling point, and at the first preset temperature, the metal compound may be carried away by the gas flow in a gaseous form. In practical application, the halogen-containing gas reacts with the metal impurities on the surface layer of the silicon material 7 first, so that the concentration of the metal impurities on the surface layer of the silicon material 7 is reduced, a concentration difference is formed between the halogen-containing gas and the metal impurities in the silicon material 7 matrix, and the metal impurities can continuously diffuse from a high concentration region to a low concentration region at a preset temperature, so that the metal impurities in the silicon material 7 matrix can be absorbed from the inside of the silicon material 7 matrix to the surface layer of the silicon material 7 and react with the halogen-containing gas to generate volatile metal compounds, and the metal impurities can be separated from the silicon material 7, so that the purity of the silicon material 7 can be improved.

Further, after the reaction gas is introduced through the gas inlet 21, the reaction gas can be kept for 5-120 minutes, so that the halogen-containing gas can fully react with the metal impurities in the silicon material 7, and the metal impurities in the silicon material 7 can be removed more thoroughly.

Specifically, the metal impurities may include metals and metal compounds thereof. For example: metal calcium, aluminum, iron, magnesium, titanium, etc., and their corresponding metal compounds.

Specifically, the conveying mechanism 1 can drive the silicon material 7 to enter the cleaning mechanism 3 from the processing cavity 2, the cleaning mechanism 3 can clean the silicon material 7, impurities and the like remained in the silicon material 7 are further removed, and the purity of the silicon material 7 is further improved.

Specifically, the reaction gas at least includes a halogen-containing gas, and the concentration of the halogen-containing gas may be set according to actual requirements, which is not particularly limited in the embodiment of the present application.

Alternatively, the halogen-containing gas may include: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon. In practical application, chlorine, bromine, fluorine, carbon tetrachloride, hydrogen chloride, freon and other halogen-containing gases are easy to react with metal impurities in the silicon material 7 under a high-temperature environment, and react with silicon slowly, so that the loss of the silicon material 7 can be reduced.

In practical applications, the reaction gas may further include an inert gas, and the inert gas does not react with the silicon material 7 in a high-temperature environment, so that the loss of the silicon material 7 can be reduced. The inert gas may include: at least one of nitrogen, argon and helium.

Specifically, the ratio of the halogen-containing gas to the inert gas may be any one of 1:999 to 999:1, and the concentration of the halogen-containing gas may be adjusted by adjusting the ratio between the halogen-containing gas and the inert gas, and specifically may be adjusted according to the actual throughput of the silicon feedstock 7, which is not particularly limited in the embodiment of the present invention.

Alternatively, the first preset temperature may be 700 ℃ to 1300 ℃. In practical application, under the condition that the first preset temperature is 700-1300 ℃, halogen-containing gas can react with metal impurities in the silicon material 7 to generate a compound, and the compound is easy to volatilize in the environment of 700-1300 ℃, so that the compound is conveniently separated from the silicon material 7, and the purity of the silicon material 7 is improved.

In another embodiment of the present invention, the processing chamber 2 may be sequentially provided with a first inlet 23 and a first outlet 24 for penetrating the transport mechanism 1 along a preset transfer path; the process chamber 2 may also be provided with a first shutter 25 for sealing the first inlet 23 and a second shutter 26 for sealing the first outlet 24.

In the embodiment of the present invention, since the first inlet 23 and the first outlet 24 of the processing chamber 2 are sequentially disposed along the preset conveying path, the silicon material 7 may enter the processing chamber 2 from the first inlet 23 and leave the processing chamber 2 from the first outlet 24 during the process of the conveying mechanism 1 driving the silicon material 7 to move along the preset conveying path. Under the condition that the conveying mechanism 1 drives the silicon material 7 to enter the processing cavity 2, the first gate 25 can be used for sealing the first inlet 23, the second gate 26 can be used for sealing the first outlet 24, sealing of the processing cavity 2 is achieved, heat dissipation in the processing cavity 2 can be avoided, the stability of the reaction of halogen-containing gas and metal impurities in the silicon material 7 is improved, and the metal impurities in the silicon material 7 are removed more fully.

In particular, a first shutter 25 may be used to open or seal the first inlet 23 and a second shutter 26 may be used to open or seal the first outlet 24. Specifically, the first shutter 25 and the second shutter 26 may be electrically controlled or manually controlled, which is not particularly limited in the embodiment of the present invention.

In still another alternative embodiment of the present invention, the cleaning mechanism 3 may include at least two spraying mechanisms 31 for spraying the cleaning liquid to the silicon material 7, and at least two cleaning tanks 32 provided corresponding to the spraying mechanisms 31; at least two spraying mechanisms 31 can be sequentially arranged along a preset conveying path, one cleaning tank 32 can be correspondingly arranged below one spraying mechanism 31, and the cleaning tank 32 can be used for recovering cleaning liquid sprayed to the silicon material 7 by the corresponding spraying mechanism 31.

In the embodiment of the invention, at least two spraying mechanisms 31 can spray cleaning liquid to the silicon material 7 entering the cleaning mechanism 3 in sequence, so as to further remove impurities remained on the surface of the silicon material 7 and further improve the purity of the silicon material 7. One cleaning tank 32 is correspondingly arranged below one spraying mechanism 31, so that the cleaning liquid sprayed to the silicon material 7 by the corresponding spraying mechanism 31 can be recovered, the environment is prevented from being polluted, and the environmental protection pressure is reduced.

Specifically, the transporting mechanism 1 can drive the silicon material 7 to sequentially pass through the at least two spraying mechanisms 31, so that the silicon material 7 can be cleaned at least twice, and the cleaning is cleaner.

Specifically, the cleaning mechanism 3 may further include at least two liquid tanks for storing cleaning liquid, the liquid outlet tank may be disposed corresponding to the spraying mechanism 31, the liquid tank may be connected to the corresponding spraying mechanism 31 through a pipeline, and the liquid tank may provide the cleaning liquid to the corresponding spraying mechanism 31.

Alternatively, the cleaning solution may include: at least one of lactic acid, hydrofluoric acid and nitric acid. In practical application, under the condition that the cleaning liquid is lactic acid, hydrofluoric acid or nitric acid, organic impurities and inorganic impurities attached to the surface of the silicon material 7 can be washed away.

Specifically, along a preset conveying path, a first spraying mechanism and a second spraying mechanism may be sequentially provided, the first spraying mechanism may spray lactic acid to the silicon material 7, and the second spraying mechanism may spray hydrofluoric acid to the silicon material 7.

In example 1, the halogen-containing gas is used to react with the metal impurities in the silicon material 7, and then the acid washing solution such as lactic acid, hydrofluoric acid and nitric acid is used to wash the silicon material 7, so as to achieve the purpose of purifying the silicon material 7.

In comparative example 1, the silicon feedstock 7 was directly rinsed with the pickling solution without using a halogen-containing gas to react with the gaseous impurities in the silicon feedstock 7, as compared with example 1. The comparison of the amounts of pickling solutions in example 1 and comparative example 1 is shown in table 1.

Specifically, taking the silicon material 7 as the redraw material as an example, the method specifically may include: the average grain size of the edge leather material can be 20-80 mm, the average grain size of the slice thick sheet material can be 10-50 mm, and the average grain size of the broken small material can be 3-8 mm.

As can be seen from Table 1, for the same type of silicon material 7, the use of the halogen-containing gas to react with the metal in the silicon material 7 and then the use of the pickling solution to clean the silicon material 7 can save the consumption of the pickling solution. In addition, when the silicon material 7 is cleaned by adopting the mode in the embodiment of the invention, the more the grain diameter is, the less pickling solution is consumed.

Table 1:

in still another alternative embodiment of the present invention, the silicon material processing apparatus may further include a drying mechanism 5, and the drying mechanism 5 may be provided on a preset transfer path; the drying mechanism 5 may be connected to a side of the cleaning mechanism 3 away from the processing chamber 2, and the drying mechanism 5 is used for drying the cleaned silicon material 7.

In the embodiment of the present invention, the drying mechanism 5 may perform drying treatment on the cleaned silicon material 7 to remove moisture on the surface of the silicon material 7.

Specifically, the processing chamber 2, the cleaning mechanism 3 and the drying mechanism 5 may be sequentially disposed along a preset conveying path, and the conveying mechanism 1 may drive the silicon material 7 to sequentially pass through the processing chamber 2, the cleaning mechanism 3 and the drying mechanism 5.

Specifically, the drying mechanism 5 may perform drying treatment on the silicon material 7 by using microwaves, vacuum, hot air, or the like.

Alternatively, the drying mechanism 5 may include: the drying box 51 and the heating piece 52, the drying box 51 is connected in the side that the wiper mechanism 3 kept away from the processing chamber 2, and heating piece 52 locates in the drying box 51, and heating piece 52 is used for adjusting the temperature in the drying box 51, and under the condition that heating piece 52 will dry the temperature in the box 51 to the second and predetermine the temperature, drying box 51 can be used to dry silicon material 7.

In the embodiment of the present invention, the heating element 52 can adjust the temperature in the drying box 51 to the second preset temperature, so that the silicon material 7 can be dried in the drying box 51, and the silicon material 7 is dried by heating, which is simple and convenient.

Specifically, the second preset temperature may be set according to actual requirements, which is not particularly limited in the embodiment of the present invention.

Specifically, the drying mechanism 5 may further include heat insulation cotton or heat insulation cotton, where the heat insulation cotton or heat insulation cotton may be disposed in the drying box 51, and under the condition that the silicon material 7 enters the drying box 51, the heat insulation cotton or heat insulation cotton may be wrapped outside the silicon material 7, so as to avoid heat dissipation for drying the silicon material 7, and accelerate the drying speed of the silicon material 7.

Specifically, the drying mechanism 5 may further include an air suction pump, which may be disposed in the drying box 51 and used in cooperation with the heating member 52, to accelerate the drying speed of the silicon material 7.

Optionally, the drying box 51 is provided with a second inlet 511 and a second outlet 512 for penetrating the transport mechanism 1 in sequence along a preset conveying path; the drying box 51 is further provided with a third shutter 513 for sealing the second inlet 511 and a fourth shutter 514 for sealing the second outlet 512.

In the embodiment of the present invention, since the second inlet 511 and the second outlet 512 of the drying box 51 are sequentially disposed along the preset conveying path, the conveying mechanism 1 may enter the drying box 51 from the second inlet 511 and leave the drying box 51 from the second outlet 512 in the process of driving the silicon material 7 to move along the preset conveying path. Under the condition that the conveying mechanism 1 drives the silicon material 7 to enter the drying box 51, the third gate 513 can be used for sealing the second inlet 511, the fourth gate 514 can be used for sealing the second outlet 512, sealing of the drying box 51 is achieved, heat dissipation in the drying box 51 can be avoided, and drying efficiency of the drying box 51 on the silicon material 7 is improved.

Specifically, a third shutter 513 is used to open or seal the second inlet 511, and a fourth shutter 514 is used to open or seal the second outlet 512. In particular, the third shutter 513 and the fourth shutter 514 may be electrically controlled or manually controlled, which is not particularly limited in the embodiment of the present invention.

Alternatively, the transport mechanism 1 may comprise a drive 11, a conveyor 12 and a carrier tray 13 for placing the silicon material 7; the driving piece 11 can be connected with the conveying piece 12, the conveying piece 12 can be connected with the bearing plate 13, the driving piece 11 can be used for driving the conveying piece 12 to move along a preset conveying path, and the movement of the conveying piece 12 can drive the silicon material 7 in the bearing plate 13 to move along the preset conveying path.

In the embodiment of the invention, the conveying part 12 drives the silicon material 7 in the bearing plate 13 to move along the preset path, so that the silicon material 7 sequentially enters the processing cavity 2 and the cleaning mechanism 3 arranged along the preset conveying path for processing, and the silicon material 7 with higher purity can be obtained, and is simpler and more convenient.

Specifically, the driving member 11 may be a motor, a cylinder, or the like, and the conveying member 12 may be a chain conveyor, a roller conveyor, a belt conveyor, or the like, which is not particularly limited in the embodiment of the present invention.

Optionally, the materials of the carrier plate 13 may include: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide. In practical application, when the material of the carrying tray 13 is quartz, alumina, graphite, carbon or silicon carbide, new impurities generated by the reaction of the silicon material 7 and the carrying tray 13 in the drying process can be avoided.

Optionally, the silicon material 7 treatment device can also comprise a transparent window 6, and a through hole can be arranged on the side wall of the treatment cavity 2; the transparent window 6 may be embedded in the through hole.

In the embodiment of the invention, the transparent window 6 is embedded on the side wall of the processing cavity 2, and the condition in the processing cavity 2 can be observed through the transparent window 6, so that the processing process of the silicon material 7 can be conveniently known.

In practical application, the side wall of the cleaning mechanism 3 may be correspondingly provided with a transparent window 6, so as to facilitate observation of the cleaning process of the silicon material 7.

In summary, the device for processing silicon material according to the embodiment of the invention at least comprises the following advantages:

in the embodiment of the invention, the conveying mechanism can drive the silicon material to move along the preset conveying path and sequentially pass through the processing cavity and the cleaning mechanism on the conveying path. Specifically, the transportation mechanism can drive the silicon material to enter the processing cavity first, the heating device can adjust the temperature in the processing cavity to a first preset temperature first, and then the reaction gas can be introduced into the processing cavity through the gas inlet, so that the halogen-containing gas in the reaction gas can react with the metal impurities in the silicon material, and the metal impurities are separated from the silicon material, so that the purity of the silicon material is improved. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, and impurities in the silicon material are further removed, so that the silicon material with higher purity is obtained. In the embodiment of the invention, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material is saved, and the environmental protection pressure is reduced; in addition, the metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment device can be directly put into a furnace for use without special treatment or changing the process conditions of the production, and the quality of the produced silicon rod is higher; the processing device in the embodiment of the invention can also process silicon materials with different sizes, and has good universality.

Referring to fig. 2, a flowchart illustrating steps of an embodiment of a method for processing a silicon material according to the present invention may specifically include the following steps:

step 201: and controlling the conveying mechanism to drive the silicon material to enter the processing cavity along a preset conveying path.

In the embodiment of the invention, the conveying mechanism can be controlled to drive the silicon material to move along the preset conveying path and enter the processing cavity arranged on the preset conveying path.

Specifically, the conveying mechanism is used for driving the silicon material to move, the moving path of the conveying mechanism is the preset conveying path, and the preset conveying path can be set according to actual requirements. The processing chamber may be provided with a space for accommodating the silicon material. The silicon material may be large block, small size crushed aggregates, granule, etc., which is not particularly limited in the embodiment of the present invention.

Further, the conveying mechanism can move along the preset path, so that the silicon material can be continuously driven to move along the preset conveying path, the large-batch silicon material treatment is convenient to realize, and the efficiency is high.

In practical application, the first gate is used to open the first inlet of the processing cavity, and then the transport mechanism is controlled to drive the silicon material to enter the processing cavity.

In particular, the transport mechanism may comprise a drive structure and a load carrying structure for placing the silicon material; the driving structure can be connected with the load structure, and the driving structure can be used for driving the load structure to move along the preset conveying path, so that the silicon materials in the bearing plate can be driven to move along the preset conveying path.

In practical application, the silicon material can be put on the carrying disc firstly, specifically, the silicon material can be loaded on the carrying disc manually, and then the driving piece is controlled to drive the conveying piece to move along the preset conveying path, so that the conveying piece can drive the silicon material on the carrying disc to enter the processing cavity along the preset conveying path, and the processing of a large quantity of silicon materials is facilitated.

Step 202: and regulating the temperature in the processing cavity to a first preset temperature by adopting a heating mechanism.

In the embodiment of the present invention, a heating mechanism may be used to adjust the temperature in the processing chamber to a first preset temperature, and specifically, the heating mechanism may be disposed in the processing chamber.

Specifically, between adopting the heating mechanism to adjust the temperature in the processing cavity, a first gate can be used for sealing the first inlet of the processing cavity, and a second gate can be used for sealing the first outlet of the processing cavity, so that the processing cavity is sealed, and the speed of the heating mechanism for adjusting the temperature in the processing cavity to the first preset temperature is accelerated.

Specifically, the first preset temperature may be 700 ℃ to 1300 ℃, so that the halogen-containing gas may react with metal impurities in the silicon material to generate a compound, and the compound is easy to volatilize in an environment of 700 ℃ to 1300 ℃ so as to be convenient for separating the compound from the silicon material.

Step 203: and inputting a reaction gas at least comprising halogen-containing gas into the processing cavity through a gas inlet so as to enable the halogen-containing gas to react with impurities in the silicon material.

In the embodiment of the invention, when the temperature in the processing cavity reaches the first preset temperature, a reaction gas at least comprising halogen-containing gas can be input into the processing cavity through the gas inlet, so that the halogen-containing gas reacts with metal impurities in the silicon material. Specifically, at the first preset temperature, the halogen-containing gas and the metal impurities in the silicon material can generate a compound, the boiling point of the compound at the first preset temperature is lower, the compound is easy to volatilize, the metal impurities can be separated from the silicon material, and the purity of the silicon material is improved.

Specifically, the halogen-containing gas may include: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon.

Specifically, the reaction gas may further include an inert gas, and the inert gas does not react with the silicon material in a high temperature environment, so that the loss of the silicon material may be reduced. The inert gas may include: at least one of nitrogen, argon and helium. Further, the ratio of the halogen-containing gas to the inert gas may be any one of 1:999 to 999:1.

Step 204: and controlling the conveying mechanism to drive the silicon material to enter the cleaning mechanism.

In the embodiment of the invention, the transport mechanism can be controlled to drive the silicon material to enter the cleaning mechanism, specifically, the cleaning mechanism and the processing cavity can be sequentially arranged along the preset conveying path, and the transport mechanism can drive the silicon material to enter the processing cavity first and then enter the cleaning mechanism.

In practical application, the first outlet of the processing cavity can be opened by using the second gate, and then the conveying mechanism is controlled to drive the silicon material to move along the preset conveying path to enter the cleaning mechanism.

Step 205: and cleaning the reacted silicon material by adopting the cleaning mechanism.

In the embodiment of the invention, the silicon material after the reaction can be cleaned by the cleaning mechanism, specifically, the cleaning mechanism can further clean the impurities remained on the surface of the silicon material, so that the purity of the silicon material is further improved.

Specifically, at least two spraying mechanisms may be used to spray the cleaning solution onto the silicon material, and the at least two spraying mechanisms may be sequentially disposed along the preset conveying path. The cleaning solution may include: at least one of lactic acid, hydrofluoric acid and nitric acid.

In summary, the method for processing the silicon material according to the embodiment of the invention at least comprises the following advantages:

in the embodiment of the invention, the conveying mechanism can drive the silicon material to move along the preset conveying path and sequentially pass through the processing cavity and the cleaning mechanism on the conveying path. Specifically, the transportation mechanism can drive the silicon material to enter the processing cavity first, the heating device can adjust the temperature in the processing cavity to a first preset temperature first, and then the reaction gas can be introduced into the processing cavity through the gas inlet, so that the halogen-containing gas in the reaction gas can react with the metal impurities in the silicon material, and the metal impurities are separated from the silicon material, so that the purity of the silicon material is improved. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, and impurities in the silicon material are further removed, so that the silicon material with higher purity is obtained. In the embodiment of the invention, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material is saved, and the environmental protection pressure is reduced; in addition, the metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment method can be directly put into a furnace for use without special treatment or changing the process conditions of the production, and the quality of the produced silicon rod is higher; the processing device in the embodiment of the invention can also process silicon materials with different sizes, and has good universality.

Referring to fig. 3, a flowchart illustrating steps of another embodiment of a method for processing a silicon material according to the present invention may specifically include the following steps:

step 301: and controlling the conveying mechanism to drive the silicon material to enter the processing cavity along a preset conveying path.

Specifically, the implementation process of this step may be executed with reference to step 201, which is not described herein.

Step 302: and inputting inert gas into the processing cavity through a gas inlet so as to replace air in the processing cavity by the inert gas.

In the embodiment of the invention, the inert gas can be firstly input into the processing cavity through the gas inlet so as to replace the air in the processing cavity by using the inert gas, thereby avoiding the air from interfering the processing of the silicon material.

Specifically, the processing cavity is vacuumized through the air outlet, and then the inert gas is input into the processing cavity through the air inlet, so that the replacement of the air in the processing cavity by the inert gas is realized.

Specifically, the first shutter may be used to seal the first inlet of the process chamber and the second shutter may be used to seal the first outlet of the process chamber prior to displacing the air within the process chamber with the inert gas.

Step 303: and regulating the temperature in the processing cavity to a first preset temperature by adopting a heating mechanism.

Specifically, the implementation process of this step may be performed with reference to step 202, which is not described herein.

Step 304: and inputting the reaction gas at least comprising halogen-containing gas into the processing cavity through the gas inlet.

In the embodiment of the present invention, the reactive gas including at least halogen-containing gas may be input into the processing chamber through the gas inlet, and specifically, the input amount of the reactive gas may be adjusted according to actual requirements.

Step 305: and maintaining the first preset temperature for 5-120 minutes to enable the halogen-containing gas to react with metal impurities in the silicon material.

Specifically, the temperature in the processing chamber may be maintained at the first preset temperature for 5 to 120 minutes, so that the halogen-containing gas may sufficiently react with the metal impurities in the silicon material, and thus the purity of the obtained silicon material is high.

Specifically, in example 2, the granular polysilicon is purified by using a halogen-containing gas, and then the granular polysilicon is washed by using an acid washing solution, so as to achieve the purpose of purifying the granular polysilicon. The granular polycrystalline silicon of comparative example 2 was not purified with halogen-containing gas and was not washed with pickling solution, as compared with example 2. The surface metal content is the metal impurity content on the surface of the silicon material, the bulk metal content is the metal impurity content in the silicon material matrix, the minority carrier lifetime of the head of the first root after the furnace is put into the furnace can represent the quality of the silicon rod manufactured by the silicon material, and the larger the minority carrier lifetime value of the head of the first root after the furnace is put into the furnace is, the better the corresponding quality of the silicon rod manufactured by the silicon material is.

As can be seen from Table 2, according to the method in the embodiment of the invention, firstly, the halogen-containing gas is used to react with metal impurities in granular polysilicon with the average grain diameter of 0.5-4 mm, and then the pickling solution is used to clean the granular polysilicon, so that the surface metal content and the bulk metal content of the granular polysilicon can be better removed, the life of the head minority carrier of the granular polysilicon after being fed into the furnace can be prolonged, and the quality of the silicon rod can be improved by adopting the granular polysilicon to carry out the process of preparing the silicon rod.

Table 2:

the edge skin material is a material with a section which is approximately arched and cut from a cylindrical single crystal rod when the square rod is processed by using a straight pulling single crystal rod, and is crushed into a block structure with an average grain diameter of 20-80 mm. In example 3, the purification of the edge skin material can be achieved by purifying the edge skin material with halogen-containing gas and then cleaning the edge skin material with pickling solution. The skirt in comparative example 3 was not purified with halogen-containing gas, nor was it washed with pickling solution, as compared with example 3.

As can be seen from Table 3, according to the method in the embodiment of the invention, firstly, halogen-containing gas is used for reacting with metal in the edge leather, and then, the pickling solution is used for cleaning the edge leather, so that the surface metal content and the bulk metal content of the edge leather can be better removed, the minority carrier lifetime of the head of the edge leather after being put into a furnace can be improved, and the quality of the silicon rod can be improved by adopting the edge leather to prepare the silicon rod.

Table 3:

example 4 the aim of purifying the sliced slabs was achieved by first purifying the sliced slabs with a mean particle size of 10-50 mm using a halogen-containing gas and then washing the sliced slabs with a pickling solution. The sliced slabs of comparative example 4 were not purified with halogen-containing gas nor washed with pickling solution, as compared with example 4.

As can be seen from Table 4, according to the method in the embodiment of the invention, the halogen-containing gas is firstly used for reacting with the metal in the sliced thick sheet material, and then the pickling solution is used for cleaning the sliced thick sheet material, so that the surface metal content and the bulk metal content of the sliced thick sheet material can be better removed, the life of the head part of the sliced thick sheet material after being put into a furnace can be prolonged, the silicon rod can be manufactured by adopting the sliced thick sheet material, and the quality of the silicon rod can be improved.

Table 4:

example 5 the crushed aggregates with an average particle size of 3-8 mm were purified using a halogen-containing gas and then washed with a pickling solution to achieve the purpose of purifying the crushed aggregates. The crushed small pieces of comparative example 5 were not purified with halogen-containing gas and were not washed with pickling solution, as compared with example 5.

As can be seen from Table 5, according to the method in the embodiment of the invention, firstly, halogen-containing gas is used for reacting with metal in the crushed small material, and then, the crushed small material is cleaned by using pickling solution, so that the surface metal content and the bulk metal content of the crushed small material can be better removed, the life of the head minority carrier of the crushed small material after being put into a furnace can be prolonged, and the quality of the silicon rod can be improved by using the crushed small material for pulling the silicon rod.

Table 5:

test data show that before the silicon rod is pulled, the silicon material is reacted with the halogen-containing gas by the method disclosed by the embodiment of the invention, and then the pickling solution is used for pickling, so that the minority carrier lifetime of the head of the pulled crystal rod can be prolonged. Moreover, the effect of the impurity removal treatment by using the halogen-containing gas is different for the silicon materials with different particle diameters.

For example: the silicon feedstock may be divided into a virgin first silicon feedstock and a reused second silicon feedstock by source. The first silicon material can be silicon material with average grain diameter of 0.5-4 mm, the first silicon material can be granular material polysilicon and the like, the first silicon material fully reacts with the halogen-containing gas, after pickling by using pickling solution, the surface metal content can be reduced to 5.1ppbwt, the bulk metal content can be reduced to 4.9ppbwt, and the minority carrier lifetime of the head root can be prolonged to 745 mu s after furnace charging. The second silicon material can be silicon material with average grain size of 3-80 mm, and the second silicon material is a composite drawing material such as side leather material with average grain size of 20-80 mm, slice thick sheet material with average grain size of 10-50 mm, broken small material with average grain size of 3-8 mm, and the like. After the skirt material fully reacts with the halogen-containing gas and is pickled by using pickling liquid, the surface metal content can be reduced from 310.1ppbwt to 12ppbwt, the bulk metal content can be reduced to 11.5ppbwt, and the minority carrier lifetime of the head root after charging can be improved to 679 mu s. After the sliced thick sheet material is fully reacted with the halogen-containing gas and is pickled by using pickling solution, the surface metal content can be reduced from 659ppbwt to 16ppbwt, the bulk metal content can be reduced to 16.7ppbwt, and the life of the head minority carrier after charging can be improved to 603 mu s. After the broken small materials are fully reacted with the halogen-containing gas and are pickled by using pickling liquid, the surface metal content can be reduced from 542ppbwt to 8.5ppbwt, the bulk metal content can be reduced to 6.9ppbwt, and the life of the head minority carrier can be prolonged to 705 mu s after the furnace is charged.

The above test data shows that the silicon material (e.g., the second silicon material) which is reused contains a large amount of surface metal impurities, and the surface metal impurities can be removed by washing with a pickling solution after reacting the silicon material with the halogen-containing gas, and the effect of removing the surface metal impurities is extremely remarkable.

By adopting the silicon material treatment method in the embodiment of the invention, the surface metal impurities and the bulk metal impurities can be removed well, the life of the head minority carrier of the furnace charged first root is prolonged, and the quality of the crystal bar can be improved after the silicon material treatment method is used for manufacturing the silicon bar.

Furthermore, the method for processing the silicon material can be suitable for silicon materials with various sizes, and has good universality. Moreover, the treatment method in the embodiment of the invention is adopted to remove the metal impurities in the silicon material for one time by using the halogen-containing gas, and then the silicon material is cleaned by using the pickling solution for one time, so as to purify the silicon material.

Step 306: an inert gas is introduced into the process chamber through the gas inlet to cool the temperature within the process chamber.

Specifically, after the halogen-containing gas and the metal impurities in the silicon material are sufficiently reacted, an inert gas may be introduced into the process chamber through the gas inlet to cool the temperature of the process chamber. Specifically, the temperature within the process chamber may be cooled to below 200 ℃.

Step 307: and controlling the conveying mechanism to drive the silicon material to enter the cleaning mechanism.

Specifically, the implementation process of this step may be executed with reference to step 204, which is not described herein.

Step 308: and cleaning the reacted silicon material by adopting the cleaning mechanism.

Specifically, the implementation process of this step may be executed with reference to step 205, which is not described herein.

Step 309: and controlling the conveying mechanism to drive the silicon material to enter the drying mechanism.

In the embodiment of the invention, the transport mechanism can be controlled to drive the silicon material to enter the drying mechanism, specifically, the drying mechanism can be arranged on the preset conveying path, the processing cavity, the cleaning mechanism and the drying mechanism can be sequentially arranged along the preset conveying path, and the transport mechanism can drive the silicon material to firstly enter the cleaning mechanism and then enter the drying mechanism.

In practical application, the second inlet of the drying mechanism can be opened by adopting a third valve, and then the conveying mechanism is controlled to drive the silicon material to move along the preset conveying path to enter the drying mechanism.

Step 310: and drying the cleaned silicon material by adopting the drying mechanism.

In the embodiment of the invention, the silicon material after cleaning can be dried by adopting the drying mechanism, and in particular, the drying mechanism can dry the residual moisture on the surface of the silicon material.

In practical application, before the drying mechanism starts drying the cleaned silicon material, a third valve may be used to seal the second inlet of the drying mechanism, and a fourth valve may be used to seal the second outlet of the drying mechanism.

It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred embodiments, and that the acts are not necessarily required by the embodiments of the invention.

For the method embodiments, since they are substantially similar to the apparatus embodiments, the description is relatively simple, and reference is made to the description of the method embodiments in part.

In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.

While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.

Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal device comprising the element.

The above description of the present invention provides a silicon material processing apparatus and a silicon material processing method, and specific examples are applied to illustrate the principles and embodiments of the present invention, where the above examples are only used to help understand the method and core idea of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.

Claims

1. A processing apparatus for silicon material, comprising: the conveying mechanism is used for driving the silicon material to move along a preset conveying path, and the processing cavity and the cleaning mechanism are sequentially arranged along the preset conveying path,

the silicon material is primary granular material polysilicon or repeatedly used redraw material; the average grain diameter of the primary granule polysilicon is 0.5-4 mm; the composite pulling material comprises: the sheet material comprises a side skin material and a slice thick sheet material, wherein the average grain size of the side skin material is 20-80 mm, and the average grain size of the slice thick sheet material is 10-50 mm;

the gas inlet can be used for introducing the reaction gas into the processing cavity under the condition that the heating mechanism adjusts the temperature in the processing cavity to a first preset temperature so as to enable the halogen-containing gas in the reaction gas to react with metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material so as to remove the impurities in the silicon material; the cleaning mechanism comprises a first spraying mechanism and a second spraying mechanism which are sequentially arranged along a preset conveying path, and the first spraying mechanism and the second spraying mechanism spray an acidic cleaning liquid to the silicon material.

2. The processing apparatus according to claim 1, wherein the processing chamber is provided with a first inlet and a first outlet for penetrating the transport mechanism in sequence along the preset transfer path;

3. The processing apparatus according to claim 1, wherein the cleaning mechanism includes at least two spray mechanisms for spraying a cleaning liquid to the silicon material, and at least two cleaning tanks provided in correspondence with the spray mechanisms;

4. A treatment device according to claim 3, wherein the cleaning liquid comprises: at least one of lactic acid, hydrofluoric acid and nitric acid.

5. The processing apparatus of claim 1, further comprising a drying mechanism disposed on the predetermined conveyance path;

6. The processing apparatus of claim 5, wherein the drying mechanism comprises: stoving case and heating piece, the stoving case connect in the wiper mechanism keep away from one side of handling the chamber, the heating piece is located stoving incasement, the heating piece is used for adjusting the temperature in the stoving case the heating piece will under the condition that the temperature in the stoving case was adjusted to the second and is predetermine the temperature, the stoving case can be used to dry the silicon material.

7. The processing apparatus according to claim 6, wherein the drying box is provided with a second inlet and a second outlet for penetrating the transport mechanism in order along the preset conveying path;

8. The processing apparatus of claim 1, wherein the transport mechanism comprises a drive, a conveyor, and a carrier tray for placing the silicon material;

9. The processing apparatus of claim 8, wherein the carrier platter comprises: at least one of quartz, alumina, graphite, carbon, and silicon carbide.

10. The processing apparatus of claim 1, further comprising a transparent window, wherein a through hole is provided in a sidewall of the processing chamber;

the transparent window is embedded in the through hole.

11. The processing apparatus of claim 1, wherein the halogen-containing gas comprises: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon;

12. The processing apparatus of claim 1, wherein the first predetermined temperature is 700 ℃ to 1300 ℃.

13. A method for processing a silicon material, comprising:

controlling the conveying mechanism to drive the silicon material to enter the processing cavity along a preset conveying path; the silicon material is primary granular material polysilicon or repeatedly used redraw material; the average grain diameter of the granular polysilicon is 0.5-4 mm; the composite pulling material comprises: the sheet material comprises a side skin material and a slice thick sheet material, wherein the average grain size of the side skin material is 20-80 mm, and the average grain size of the slice thick sheet material is 10-50 mm;

the silicon material after the reaction is cleaned by adopting a first spraying mechanism and a second spraying mechanism which are sequentially arranged along a preset conveying path by adopting the cleaning mechanism so as to remove impurities in the silicon material; the first spraying mechanism and the second spraying mechanism both spray an acidic cleaning solution to the silicon material.

14. The method of claim 13, wherein prior to the step of adjusting the temperature within the process chamber to a first predetermined temperature using a heating mechanism, comprising:

15. The method of processing according to claim 13, wherein the step of inputting a reaction gas including at least a halogen-containing gas into the processing chamber through the gas inlet so as to react the halogen-containing gas with metal impurities in the silicon material comprises:

16. The method of processing according to claim 13, further comprising, after the step of cleaning the reacted silicon material with the cleaning mechanism:

and drying the cleaned silicon material by adopting the drying mechanism.