CN114208156B - Pixel unit, pixel array, related local control unit, image sensor and electronic device - Google Patents
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
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Abstract
The application discloses a pixel unit, a pixel array, a related local control unit, an image sensor and an electronic device. The transfer transistor of the pixel unit is changed from a non-conducting state to a conducting state at a second trigger point in a first time period in the reading period so as to reset the photodiode through a first reference voltage, and is changed to the non-conducting state after maintaining the conducting state for a first preset time; and the transfer transistor is converted from a non-conductive state to a conductive state at a third trigger point in a second time period in the reading period so that charges in the photodiode enter the floating diffusion region, and the transfer transistor is converted to the non-conductive state after maintaining the conductive state for a second preset time; wherein the time difference between the second trigger point and the third trigger point dynamically changes during different read cycles.
Description
Technical Field
The present disclosure relates to circuits, and particularly to a pixel unit, a pixel array, a local control unit, an image sensor, and an electronic device.
Background
In the field of image sensors, a high dynamic range (High Dynamic Range, HDR) has been one of the goals sought by designers, and conventionally, a plurality of images obtained at different exposure times are combined by image processing, and finally, an effect of a high dynamic range is exhibited in one image.
Because of the inconveniences and room for improvement, one of the key problems in the art is how to replace the existing approach with a lower cost, lower power consumption, high dynamic range solution.
Disclosure of Invention
One of the objectives of the present application is to disclose a pixel unit, a pixel array, a local control unit, an image sensor and an electronic device for solving the above-mentioned problems.
An embodiment of the application discloses a pixel unit, comprising: a floating diffusion region; a reset select transistor coupled between the floating diffusion region and a first reference voltage, the reset select transistor being turned on according to a reset signal for a first period of time before a first trigger point in a read cycle, and being turned off for a second period of time after the first trigger point in the read cycle; a photodiode coupled to a second reference voltage; a transfer transistor coupled between the photodiode and the floating diffusion region for performing gate control between the photodiode and the floating diffusion region; a source follower transistor coupled to the floating diffusion region and the first reference voltage for generating an output voltage according to a voltage gain of the source follower transistor and a voltage of the floating diffusion region; and a row select transistor coupled to the source follower transistor, the row select transistor selectively turned on according to a row select transistor signal to output a sensing result; wherein the transfer transistor transitions from a non-conductive state to a conductive state at a second trigger point in the first period of time in the read cycle to reset the photodiode with the first reference voltage, the transfer transistor transitioning to a non-conductive state after maintaining the conductive state for a first predetermined time; and the transfer transistor is changed from a non-conductive state to a conductive state at a third trigger point in the second period of time in the reading period so that charges in the photodiode enter the floating diffusion region, and the transfer transistor is changed to the non-conductive state after maintaining the conductive state for a second predetermined time; wherein the time difference between the second trigger point and the third trigger point dynamically changes at different ones of the read cycles.
An embodiment of the application discloses a pixel array, comprising: a first pixel block and a second pixel block, each of the first pixel block and the second pixel block comprising at least one pixel unit described above; wherein, in the same reading period, a time difference between the second trigger point and the third trigger point of the pixel units in the first pixel block and a time difference between the second trigger point and the third trigger point of the pixel units in the second pixel block are different.
An embodiment of the application discloses a local control unit for controlling the first pixel block or the second pixel block, the local control unit is coupled to the pixel units in the first pixel block or the second pixel block and generates a transmission transistor control signal to control the transmission transistor in the pixel unit, wherein the local control unit dynamically changes the time difference between the second trigger point and the third trigger point for different reading periods to equivalently control the exposure time length of the pixel unit in each reading period.
An embodiment of the present application discloses an image sensor including: the pixel array described above; the local control unit is correspondingly coupled to the first pixel block and the second pixel block; and a global control unit for generating the exposure time length selection signal, the plurality of exposure trigger signals and the readout signal to each local control unit, and generating the reset signal and the row selection transistor signal to the first pixel block and the second pixel block.
An embodiment of the application discloses an electronic device comprising the image sensor.
The pixel unit, the pixel array, the related local control unit, the image sensor and the electronic device provided by the application can directly obtain a single image with high dynamic range without increasing the hardware complexity of the pixel array.
Drawings
Fig. 1 is a schematic diagram of an embodiment of a pixel array of an image sensor according to the present application.
Fig. 2 is a schematic diagram of an embodiment of a pixel unit in each pixel block in a pixel array of an image sensor according to the present application.
Fig. 3 is a schematic diagram of an embodiment of an image sensor of the present application.
Fig. 4 is a timing chart of an embodiment of the operation of the image sensor in one reading period.
Detailed Description
The following disclosure provides various embodiments or examples that can be used to implement the various features of the present disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. It is to be understood that these descriptions are merely exemplary and are not intended to limit the present disclosure. For example, in the following description, forming a first feature on or over a second feature may include certain embodiments in which the first and second features are in direct contact with each other; and may include embodiments in which additional components are formed between the first and second features such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. Such reuse is for brevity and clarity purposes and does not itself represent a relationship between the different embodiments and/or configurations discussed.
Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the application are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. However, any numerical value inherently contains certain standard deviations found in their respective testing measurements. As used herein, "about" generally means that the actual value is within plus or minus 10%, 5%, 1% or 0.5% of a particular value or range. Alternatively, the term "about" means that the actual value falls within an acceptable standard error of the average value, depending on the consideration of the person having ordinary skill in the art to which the present application pertains. It is to be understood that all ranges, amounts, values, and percentages used herein (e.g., to describe amounts of materials, lengths of time, temperatures, operating conditions, ratios of amounts, and the like) are modified by the word "about" unless otherwise specifically indicated. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present specification and attached claims are approximations that may vary depending upon the desired properties. At least these numerical parameters should be construed as the number of significant digits and by applying ordinary rounding techniques. Herein, a numerical range is expressed as from one end point to another end point or between two end points; unless otherwise indicated, all numerical ranges recited herein include endpoints.
Fig. 1 is a schematic diagram of an embodiment of a pixel array of an image sensor according to the present application. The pixel array 1 comprises at least more than one pixel block, and when the pixel array 1 is used for capturing an image, the exposure times of the pixel blocks can be independently controlled in the same operation of capturing the image, for example, the exposure times of the pixel blocks can be correspondingly configured according to brightness, that is, the exposure times of the pixel blocks can be different in the operation of capturing the image at a time to generate a single image. By the above design, the effect of high dynamic range can be achieved in a single image.
The present application is not limited to the method of dividing the pixel array 1 into a plurality of pixel blocks, and for example, in the most extreme example, the pixel blocks may be divided in units of one pixel unit, that is, each pixel block includes only one pixel unit. However, in a typical image, the exposure time does not need to be controlled precisely in pixel units, so in the embodiment of the present application, each pixel block includes a small pixel array, for example, a pixel array formed by 16×16 pixel units, and the entire pixel array 1 may include, for example, 256×256 pixel blocks. That is, the number of pixel blocks may range from greater than 1 to less than or equal to the number of all pixel units of the pixel array 1.
Fig. 2 is a schematic diagram of an embodiment of a pixel unit in each pixel block in a pixel array of an image sensor according to the present application. The pixel cell 100 includes a photodiode 102, a transfer transistor 104, a floating diffusion region FD, a reset select transistor 106, a source follower transistor 108, and a row select transistor 110. Wherein the anode of the photodiode 102 is coupled to the second reference voltage V2, and the cathode of the photodiode 102 is coupled to the drain of the pass transistor 104. The source of the transfer transistor 104 is coupled to the floating diffusion FD, and the gate of the transfer transistor 104 is coupled to a transfer transistor control signal TX (hereinafter referred to as signal TX) for performing gate control between the photodiode 102 and the floating diffusion FD according to the signal TX. The reset selection transistor 106 is coupled between the floating diffusion FD and the first reference voltage V1, and a gate of the reset selection transistor 106 is coupled to a reset signal RST (hereinafter referred to as a signal RST). The gate of the source follower transistor 108 is coupled to the floating diffusion FD, the drain of the source follower transistor 108 is coupled to the first reference voltage V1, the source of the source follower transistor 108 is coupled to the row select transistor 110, and the source follower transistor 108 has a voltage gain G, such that the source follower transistor 108 can generate the output voltage VPO at the source of the row select transistor 110 according to the voltage VFD of the floating diffusion FD. The gate of the row selection transistor 110 is coupled to a row selection transistor signal RSEL (hereinafter referred to as signal RSEL), and selectively outputs an output voltage VPO as a sensing result according to the signal RSEL. For example, the first reference voltage may be a supply voltage VDD and the second reference voltage may be a ground voltage GND.
Fig. 4 is a timing chart of an embodiment of the operation of the image sensor in one reading period. The differences between the pixel cell 100 of fig. 2 and the known pixel cell are described below by using the timing variations of the signals RSEL, RST and TX in fig. 4. Wherein the first period TP1 and the second period TP2 form a read cycle. As shown in fig. 4, the first period TP1 and the second period TP2 are continued on the time axis, and the first trigger point T1 is defined as a boundary. The reset select transistor 106 is kept on in a first period TP1 before the first trigger point T1 in the read cycle and kept off in a second period TP2 after the first trigger point T1 in the read cycle according to the control of the signal RST. The row select transistor 110 is controlled by the signal RSEL to transition from the non-conductive state to the conductive state earlier than the first trigger point T1, and continues the conductive state until the end of the reading period.
The transfer transistor 104 is turned from the non-conductive state to the conductive state at the second trigger point T2 in the first period TP1 in the reading period, so that the photodiode 102 can be reset by the first reference voltage V1 due to the conduction of the reset selection transistor 106 and the transfer transistor 104, i.e. the charge in the photodiode 102 is discharged from the first reference voltage V1 through the reset selection transistor 106 and the transfer transistor 104. After the transfer transistor 104 maintains the conductive state for a first predetermined time, the fourth trigger point T4 before the first trigger point T1 is turned back to the non-conductive state, and from then on, the photodiode 102 resumes accumulating the charge generated by the exposure.
Next, after the transfer transistor 104 is turned from the non-conductive state to the conductive state at the second trigger point T2, the transfer transistor 104 is turned from the non-conductive state to the conductive state again at the third trigger point T3 in the second period TP2 in the read period, and since the reset selection transistor 106 is non-conductive at this time, the charges in the photodiode 102 enter and accumulate in the floating diffusion region FD, so that the voltage of the floating diffusion region FD correspondingly changes, and the output voltage VPO is outputted as the sensing result through the source follower transistor 108 and the row selection transistor 110. The pass transistor 104 is maintained in the conductive state for a second predetermined time before the fifth trigger point T5 is turned to the non-conductive state.
The application can equivalently control the exposure time length of the pixel units in each pixel block by changing the time difference between the second trigger point T2 and the third trigger point T3. For example, for different pixel blocks in the pixel array 1, the exposure time length of each pixel unit in each pixel block range can be determined according to the brightness in each pixel block range at a certain moment when the pixel array 1 performs one sensing (one reading period). For example, the exposure time length of each pixel unit in the pixel block range with dark brightness is longer than that of each pixel unit in the pixel block range with bright brightness, so as to obtain an image with high dynamic range. Each pixel block may have a different exposure time length configuration from the previous reading period in each reading period.
In addition, in the present embodiment, the adjustment of the trigger timing of the second trigger point T2 is adopted to change the exposure time length of the pixel unit, that is, the trigger timing of the third trigger point T3 is not changed in the present embodiment. In other words, the time difference between the second trigger point T2 and the first trigger point T1 may be different from each other for different pixel blocks in the same or different read periods; the time difference between the second trigger point T2 and the first trigger point T1 may also be different for the same pixel block at different read periods. This has the advantage that it can be determined that the moment at which the exposure of each pixel cell ends is fixed with respect to the first trigger point T1, thereby controlling the readout of the output voltage VPO more efficiently.
In this embodiment, the triggering timing of the second triggering point T2 may be after the starting time point of the first period TP1, and the second triggering point T2 does not make the third triggering point T3 later than the first triggering point T1 at the latest.
Fig. 3 is a schematic diagram of an embodiment of an image sensor of the present application. The image sensor 200 includes a plurality of local sensor blocks 208_1 to 208—n, where n is an integer greater than 1. The plurality of local sensor blocks 208_1 to 208—n each include a corresponding pixel block and a local control unit, so that all the pixel blocks in the plurality of local sensor blocks 208_1 to 208—n constitute the pixel array 1 of fig. 1. In the present embodiment, the local control units in the plurality of local sensor blocks 208_1 to 208—n have the same structure, and the local sensor block 208_1 is taken as an example, and includes the local control unit 204 and the pixel block 206. The local control unit 204 is coupled to the pixel block 206 to control the pixel block 206. Specifically, the local control unit 204 is configured to generate a signal TX to each pixel unit in the pixel block 206 to control the exposure time of each pixel unit.
In the present embodiment, the image sensor 200 further includes a global control unit 202 for controlling all the local sensor blocks 208_1 to 208—n. Specifically, the global control unit 202 is configured to generate an exposure time length selection signal exp_rg, a plurality of exposure trigger signals exp_t1 to exp_tm, and a readout signal tx_s to the local control units in each local sensor block, wherein m is an integer greater than 1; the global control unit 202 also generates a signal RST and a signal RSEL to pixel blocks in each local sensor block.
Referring to fig. 3 and 4, taking the local control unit 204 as an example, the local control unit 204 selects one of the plurality of exposure trigger signals exp_t1 to exp_tm according to the exposure time length selection signal exp_rg to determine when the signal TX is to turn on the transmission transistor 104 in the first period TP1, i.e. the local control unit 204 selects one of the plurality of exposure trigger signals exp_t1 to exp_tm according to the exposure time length selection signal exp_rg, and determines the relative time relationship between the second trigger point T2 and the first trigger point T1, and determines the relative time relationship between the fourth trigger point T4 and the first trigger point T1 according to the exposure time length selection signal exp_rg.
As shown in fig. 4, the phases of the exposure trigger signals exp_t1 to exp_tm generated by the global control unit 202 are different from each other, and the phases of the exposure trigger signals exp_t1 to exp_tm sequentially extend. For example, the value of the exposure time length selection signal exp_rg output by the global control unit 202 may be an integer from 1 to m, and the occurrence timing of the second trigger point T2 and the fourth trigger point T4 is determined on behalf of the local control unit 204 when the value of the exposure time length selection signal exp_rg is 2, for example. For example, before the first trigger point T1, the local control unit 204 directly outputs the exposure trigger signal exp_t2 as the signal TX.
The local control unit 204 also determines when the signal TX is to turn on the pass transistor 104 in the second period TP2 according to the read signal tx_s, i.e. the local control unit 204 determines the relative time relationship between the third trigger point T3 and the first trigger point T1 and the relative time relationship between the fifth trigger point T5 and the first trigger point T1 according to the read signal tx_s. For example, after the first trigger point T1, the local control unit 204 directly outputs the readout signal tx_s as the signal TX.
That is, when the exposure time length selection signal exp_rg indicates that the exposure trigger signal exp_t1 is employed to generate the signal TX, that is, the charge representing that the photodiode 102 can have the longest time to accumulate; when the exposure time length selection signal exp_rg indicates that the exposure trigger signal exp_t2 is employed to generate the signal TX, the photodiode 102 can have a charge accumulated for a next long time; by analogy, when the exposure time length selection signal exp_rg indicates that the exposure trigger signal exp_tm is employed to generate the signal TX, the photodiode 102 can accumulate charges for the shortest time, and thus the exposure trigger signals exp_t1 to exp_tm correspond to cases where the luminance is low to high, respectively.
In some embodiments, the correspondence between pixel blocks and the local control unit may be changed, for example, a plurality of pixel blocks are controlled by one local control unit.
The pixel array 1 in the image sensor 200 of the present application may be disposed on a first semiconductor die, the plurality of local control units and the global control unit 202 may be disposed on a second semiconductor die other than the first semiconductor die, and the first semiconductor die and the second semiconductor die may be packaged in a 3D or 2.5D package mode, but the present application is not limited thereto.
The application also proposes an electronic device comprising the image sensor 200. In particular, electronic devices to which the present application is applicable include, but are not limited to, mobile communication devices, ultra mobile personal computer devices, portable entertainment devices, and other electronic devices having data interaction capabilities. The mobile communication device is characterized by having a mobile communication function and mainly aims at providing voice and data communication. Such terminals include: smart phones (e.g., iPhone), multimedia phones, functional phones, and low-end phones, etc. Ultra mobile personal computer devices belong to the category of personal computers, have computing and processing functions, and generally have mobile internet access characteristics. Such terminals include: PDA, MID, and UMPC devices, etc., such as iPad. The portable entertainment device may display and play multimedia content. The device comprises: audio, video players (e.g., iPod), palm game consoles, electronic books, and smart toys and portable car navigation devices.
The design of the application can directly obtain a single image with high dynamic range effect through one-time sensing without increasing the hardware complexity of the pixel unit. In particular, the present application can control the exposure time of the pixel unit only by using the signal TX without increasing the number of control signals of the pixel unit, and thus without increasing the complexity of the interface for controlling the pixel array 1.
The foregoing description briefly sets forth features of certain embodiments of the application in order to provide a thorough understanding of the various aspects of the present disclosure to those skilled in the art. It will be appreciated by those skilled in the art that the present disclosure may be readily utilized as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. It will be apparent to those skilled in the art that such equivalent embodiments are within the spirit and scope of the present disclosure, and that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.
Claims (11)
1. A pixel cell, comprising:
a floating diffusion region;
a reset select transistor coupled between the floating diffusion region and a first reference voltage, the reset select transistor being turned on according to a reset signal for a first period of time before a first trigger point in a read cycle, and being turned off for a second period of time after the first trigger point in the read cycle;
a photodiode coupled to a second reference voltage;
a transfer transistor coupled between the photodiode and the floating diffusion region for performing gate control between the photodiode and the floating diffusion region;
a source follower transistor coupled to the floating diffusion region and the first reference voltage for generating an output voltage according to a voltage gain of the source follower transistor and a voltage of the floating diffusion region; and
a row select transistor coupled to the source follower transistor, the row select transistor selectively turned on according to a row select transistor signal to output a sensing result;
wherein the transfer transistor transitions from a non-conductive state to a conductive state at a second trigger point in the first period of time in the read cycle to reset the photodiode with the first reference voltage, the transfer transistor transitioning to a non-conductive state after maintaining the conductive state for a first predetermined time; and
the transfer transistor is changed from a non-conductive state to a conductive state at a third trigger point in the second period of time in the reading period so that charges in the photodiode enter the floating diffusion region, and is changed to the non-conductive state after maintaining the conductive state for a second predetermined time;
wherein the time difference between the second trigger point and the third trigger point dynamically changes at different ones of the read cycles.
2. The pixel cell of claim 1, wherein a time difference between the second trigger point and the first trigger point dynamically changes at different ones of the read cycles.
3. The pixel cell of claim 1, wherein a time difference between the first trigger point and the third trigger point is fixed at different ones of the read cycles.
4. A pixel array comprising:
a first pixel block and a second pixel block each comprising at least one pixel cell according to any one of claims 1 to 3;
wherein, in the same reading period, a time difference between the second trigger point and the third trigger point of the pixel units in the first pixel block and a time difference between the second trigger point and the third trigger point of the pixel units in the second pixel block are different.
5. A local control unit for controlling a first pixel block or a second pixel block in a pixel array according to claim 4, wherein the local control unit is coupled to the pixel units in the first pixel block or the second pixel block and generates a transfer transistor control signal to control the transfer transistors in the pixel units, wherein the local control unit dynamically changes the time difference between the second trigger point and the third trigger point for different read periods to equivalently control the exposure time length of the pixel units in each read period.
6. The local control unit of claim 5, wherein the local control unit selects one of a plurality of exposure trigger signals to generate the pass transistor control signal according to an exposure time length selection signal, wherein the plurality of exposure trigger signals are different in phase from each other.
7. The local control unit of claim 6, wherein the local control unit selects one of a plurality of exposure trigger signals to determine the second trigger point of the pass transistor control signal in accordance with an exposure time length selection signal.
8. The local control unit of claim 7, wherein the local control unit further generates the pass transistor control signal in accordance with a read signal, the read signal being used to determine the third trigger point.
9. An image sensor, comprising:
the pixel array of claim 4;
two local control units as claimed in claim 8, coupled to the first pixel block and the second pixel block, respectively; and
the global control unit is used for generating the exposure time length selection signal, the exposure trigger signals and the readout signals to the local control units and generating the reset signal and the row selection transistor signals to the first pixel block and the second pixel block.
10. The image sensor of claim 9, wherein the pixel array is disposed on a first semiconductor die, and the plurality of local control units and the global control unit are disposed on a second semiconductor die.
11. An electronic device, comprising:
the image sensor of any one of claims 9 to 10.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| PCT/CN2021/110559 WO2023010335A1 (en) | 2021-08-04 | 2021-08-04 | Pixel unit, pixel array and related local control unit, image sensor and electronic device |
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| CN114208156B true CN114208156B (en) | 2023-10-27 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1798275A (en) * | 2004-12-20 | 2006-07-05 | 索尼株式会社 | Solid-state imaging device and method for driving the same |
| WO2007083951A1 (en) * | 2006-01-19 | 2007-07-26 | Mtekvision Co., Ltd. | Image sensor and controlling method thereof |
| CN102387316A (en) * | 2010-08-31 | 2012-03-21 | 比亚迪股份有限公司 | Pixel unit and image sensor with high dynamic range |
| KR20120115886A (en) * | 2011-04-11 | 2012-10-19 | 엘지이노텍 주식회사 | Pixel, pixel array, image sensor including the same and method for operating the image sensor |
| CN108470742A (en) * | 2018-03-22 | 2018-08-31 | 上海晔芯电子科技有限公司 | Hdr image sensor pixel structure and imaging system |
| CN110383824A (en) * | 2018-10-09 | 2019-10-25 | 深圳市汇顶科技股份有限公司 | Imaging sensor, semiconductor structure and the method for operating imaging sensor |
| CN111447385A (en) * | 2020-03-17 | 2020-07-24 | 深圳市南北微电子技术有限公司 | Global shutter image sensor pixel structure and signal sampling and reading method thereof |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8847136B2 (en) * | 2011-01-02 | 2014-09-30 | Pixim, Inc. | Conversion gain modulation using charge sharing pixel |
| CN102752559B (en) * | 2011-04-18 | 2015-07-22 | 原相科技股份有限公司 | High-dynamic range image sensing circuit and high-dynamic range image reading method |
| CN102547159B (en) * | 2012-02-16 | 2014-01-22 | 中国科学院上海高等研究院 | Wide-dynamic range image sensor and control method thereof |
| US9185307B2 (en) * | 2012-02-21 | 2015-11-10 | Semiconductor Components Industries, Llc | Detecting transient signals using stacked-chip imaging systems |
| KR101483356B1 (en) * | 2013-03-07 | 2015-01-15 | 주식회사 동부하이텍 | Image sensor |
| US9319611B2 (en) * | 2013-03-14 | 2016-04-19 | Apple Inc. | Image sensor with flexible pixel summing |
| US9961279B1 (en) * | 2016-12-20 | 2018-05-01 | Omnivision Technologies, Inc. | Blooming free high dynamic range image sensor read out architecture using in-frame multi-bit exposure control |
| US10250828B1 (en) * | 2017-12-21 | 2019-04-02 | SmartSens Technology (U.S.), Inc. | Global shutter image sensor with anti-blooming pixel and knee point self-calibration |
| TWI692978B (en) * | 2018-07-10 | 2020-05-01 | 廣州印芯半導體技術有限公司 | Image sensor and pixel array circuit thereof |
| US10756129B2 (en) * | 2019-01-10 | 2020-08-25 | Semiconductor Components Industries, Llc | Image sensors having imaging pixels with ring-shaped gates |
| CN110677604B (en) * | 2019-10-12 | 2024-02-20 | 南京威派视半导体技术有限公司 | Pixel unit of voltage domain global exposure image sensor and control method thereof |
-
2021
- 2021-08-04 CN CN202180004874.2A patent/CN114208156B/en active Active
- 2021-08-04 WO PCT/CN2021/110559 patent/WO2023010335A1/en unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1798275A (en) * | 2004-12-20 | 2006-07-05 | 索尼株式会社 | Solid-state imaging device and method for driving the same |
| WO2007083951A1 (en) * | 2006-01-19 | 2007-07-26 | Mtekvision Co., Ltd. | Image sensor and controlling method thereof |
| CN102387316A (en) * | 2010-08-31 | 2012-03-21 | 比亚迪股份有限公司 | Pixel unit and image sensor with high dynamic range |
| KR20120115886A (en) * | 2011-04-11 | 2012-10-19 | 엘지이노텍 주식회사 | Pixel, pixel array, image sensor including the same and method for operating the image sensor |
| CN108470742A (en) * | 2018-03-22 | 2018-08-31 | 上海晔芯电子科技有限公司 | Hdr image sensor pixel structure and imaging system |
| CN110383824A (en) * | 2018-10-09 | 2019-10-25 | 深圳市汇顶科技股份有限公司 | Imaging sensor, semiconductor structure and the method for operating imaging sensor |
| CN111447385A (en) * | 2020-03-17 | 2020-07-24 | 深圳市南北微电子技术有限公司 | Global shutter image sensor pixel structure and signal sampling and reading method thereof |
Non-Patent Citations (3)
| Title |
|---|
| CMOS image sensor using pixel aperture technique for single-chip 2D and 3D imaging;Byoung-Soo Choi et al.;《2017 IEEE SENSORS》;全文 * |
| TDI CMOS图像传感器曝光时间优化方法研究;何春良 等;《光学学报》;全文 * |
| 基于多次曝光技术的大动态范围CMOS图像传感器研究;高志远;《中国优秀硕士学位论文全文数据库（电子期刊）》;全文 * |
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