CN114196926A - Short-process high-efficiency preparation method of high-purity copper and copper alloy sputtering target material - Google Patents
Short-process high-efficiency preparation method of high-purity copper and copper alloy sputtering target material Download PDFInfo
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- CN114196926A CN114196926A CN202111401765.2A CN202111401765A CN114196926A CN 114196926 A CN114196926 A CN 114196926A CN 202111401765 A CN202111401765 A CN 202111401765A CN 114196926 A CN114196926 A CN 114196926A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/0081—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for slabs; for billets
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention provides a short-process high-efficiency high-purity copper and copper alloy sputtering target material preparation method, which comprises the following steps: firstly, preparing a high-purity square ingot; secondly, preparing a hot-rolled thick plate; step three, isothermal annealing heat treatment; fourthly, machining the target; and fifthly, post-processing. According to the invention, square cast ingots are adopted, and multiple steps in the traditional sputtering method are subjected to normalization treatment, namely, the square cast ingots are subjected to integral rolling deformation processing and heat treatment to obtain large-size plate blanks, and then the plate blanks are directly cut according to the blanking requirement of target finished products. Compared with the traditional preparation method, the short-flow high-efficiency method provided by the invention can obviously improve the production efficiency, reduce the production cost, is beneficial to realizing automation and is suitable for mass production.
Description
Technical Field
The invention relates to the technical field of metal target preparation, in particular to a short-process high-efficiency preparation method of a high-purity copper and copper alloy sputtering target.
Background
The high-purity metal sputtering target is widely applied to industries of information storage, integrated circuits, flat panel display, solar cells and the like, and various film functional materials are mainly obtained by a magnetron sputtering technology. As metal interconnect materials, copper and copper alloys have significant advantages in terms of low resistivity, high electromigration resistance, lower cost, higher wiring density, and narrower wiring width. In addition, trace alloying elements such as Al and Mn are added into the high-purity copper, and a spontaneous diffusion barrier layer or an interface barrier layer is formed by utilizing microalloying, so that the line width can be further reduced, and therefore, the high-purity copper and the copper alloy target material are the main direction of market competition in the future.
At present, the main production links of the preparation method of the high-purity copper and copper alloy target material comprise: smelting and casting to obtain a circular ingot, sawing the ingot into an ingot blank required by a single target, performing hot forging deformation on the single ingot blank, performing heat treatment to remove internal stress, performing rolling deformation on the single ingot blank, performing heat treatment to remove the internal stress, performing water jet cutting or linear cutting to obtain a target blank, machining the target blank, cleaning, drying and packaging. By adopting the preparation method, the preparation process is long, the efficiency is low, the cost is high, the automation degree is low, a large amount of manual operation is relied on, and the preparation method is suitable for single-piece production under the condition of multiple varieties and small batch, but is not suitable for mass production of the same model.
Aiming at the problems, the invention provides a short-flow high-efficiency preparation method of a high-purity copper and copper alloy sputtering target material, which adopts a square ingot, and carries out normalization treatment on links from the second step to the sixth step in the traditional sputtering method, namely, the square ingot is subjected to integral rolling deformation processing and heat treatment to obtain a large-size plate blank, and then the plate blank is directly cut according to the blanking requirement of a target material finished product. Compared with the traditional preparation method, the short-flow high-efficiency method provided by the invention can obviously improve the production efficiency, reduce the production cost, is beneficial to realizing automation and is suitable for mass production.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a short-process high-efficiency high-purity copper and copper alloy sputtering target material preparation method, so as to shorten the existing production process, improve the production efficiency, reduce the production cost and improve the automation level.
In order to solve the technical problems, the invention provides a short-process high-efficiency high-purity copper and copper alloy sputtering target material preparation method, which comprises the following steps:
firstly, preparing a high-purity square ingot, obtaining a high-purity metal melt through smelting, and obtaining a large-size square ingot by using a vertical ingot pulling mechanism;
secondly, preparing a hot-rolled thick plate, namely rolling and deforming the square cast ingot prepared in the first step by adopting a large-tonnage wide hot rolling mill, and controlling the final rolling thickness to obtain a plate blank with the target thickness;
step three, carrying out isothermal annealing heat treatment, namely carrying out isothermal annealing treatment by using a high-precision temperature control box type heat treatment furnace to remove residual stress;
fourthly, machining the target;
and fifthly, post-processing.
In the first step, vacuum induction melting or electron beam melting is adopted for melting.
The first step is to obtain a clean melt by vacuum induction melting or electron beam melting, and obtain a square ingot with a good surface and no defect inside by a lower ingot drawing mechanism in a semi-continuous casting mode under a vacuum state.
The thickness of the square cast ingot is preferably 100-300 mm.
In the second step, before hot rolling, the square ingot in the first step is preheated at 400-600 ℃ for 2-6 hours, the ingot can be heated along with the furnace, and when the temperature reaches a set value, the furnace temperature fluctuation at each part of the heat treatment furnace is not more than +/-5 ℃.
In the second step, the final rolling thickness is determined by rolling deformation calculation, and the deformation is 60-90% generally.
And in the third step, the heat treatment temperature is 200-300 ℃, the heat preservation time is 1-3 hours, the plate blank can be heated along with the furnace, and when the temperature is measured, the furnace temperature fluctuation at each part of the heat treatment furnace is not more than +/-5 ℃.
And the fourth step is specifically to cut the metal target blank by water jet cutting or linear cutting, and process the front, back and side of the target blank by a numerical control machine tool to obtain a target finished product.
And the fifth step comprises ultrasonic cleaning, vacuum drying and plastic packaging.
The invention has the advantages of
1. The ingot is a square ingot instead of a round ingot used in the traditional process, and has the advantages that the square ingot can be directly subjected to hot rolling deformation without forging and cogging, the production flow is simplified, and a foundation is laid for the normalization of target blank deformation processing.
2. The deformation normalization of the target blank is that the whole ingot is subjected to deformation heat treatment to obtain the target size and the microstructure and then is cut and discharged for machining and forming a plurality of target materials.
Drawings
FIG. 1 is a flow chart of the present invention for preparing a short-flow high-efficiency high-purity copper and copper alloy sputtering target material;
FIG. 2 is a metallographic microstructure of an EMI high purity copper target;
FIG. 3 is a schematic diagram showing the finished dimensions of an EMI high-purity copper target.
Detailed Description
The invention provides a short-process high-efficiency preparation method of a high-purity copper and copper alloy sputtering target material, which comprises the following steps:
firstly, preparing a high-purity square ingot, obtaining a high-purity metal melt through smelting, and obtaining a large-size square ingot by using a vertical ingot pulling mechanism;
secondly, preparing a hot-rolled thick plate, namely rolling and deforming the square cast ingot prepared in the first step by adopting a large-tonnage wide hot rolling mill, and controlling the final rolling thickness to obtain a plate blank with the target thickness;
step three, carrying out isothermal annealing heat treatment, namely carrying out isothermal annealing treatment by using a high-precision temperature control box type heat treatment furnace to remove residual stress;
fourthly, machining the target;
and fifthly, post-processing.
In the first step, vacuum induction melting or electron beam melting is adopted for melting.
The first step is to obtain a clean melt by vacuum induction melting or electron beam melting, and obtain a square ingot with a good surface and no defect inside by using a lower ingot drawing mechanism in a semi-continuous casting mode under a vacuum state, wherein the thickness dimension is 100-300 mm. The square ingot has the advantages that the square ingot is directly subjected to hot rolling deformation without forging treatment, and the subsequent processing deformation process can be simplified.
In the second step, before hot rolling, the square ingot in the first step is preheated at 400-600 ℃ for 2-6 hours, the ingot can be heated along with the furnace, and when the temperature reaches a set value, the furnace temperature fluctuation at each part of the heat treatment furnace is not more than +/-5 ℃. The thermometer is the time for starting heat preservation when the furnace is heated to a specified temperature, taking 400 ℃/3h as an example, the time for reaching the temperature is the temperature rise of the ingot along with the furnace, the time for starting to be timed and the heat preservation for 3h when the furnace temperature reaches 400 ℃, and the time of the temperature rise process is not included in 3 h.
In the second step, the final rolling thickness is determined by rolling deformation calculation, and the deformation is 60-90% generally.
And in the third step, the heat treatment temperature is 200-300 ℃, the heat preservation time is 1-3 hours, the plate blank can be heated along with the furnace, and when the temperature is measured, the furnace temperature fluctuation at each part of the heat treatment furnace is not more than +/-5 ℃.
And the fourth step is specifically to cut the metal target blank by water jet cutting or linear cutting, and process the front, back and side of the target blank by a numerical control machine tool to obtain a target finished product.
The water jet cutter is adopted to cut the target blank meeting the drawing requirements, the advantages of meeting the production requirements of target blanks with different shapes and complex shapes by adopting computer programming design and having high production efficiency and good process repeatability are achieved.
The front profile, the flange, the side face and the back plate of the target are machined to a finished product by adopting numerical control vertical lathe/vertical milling, and the method has the advantage of high machining precision. The target finished product comprises high-purity copper and copper alloy targets which are 12 inches, 8 inches, 6 inches, 4 inches and below and are applied to integrated circuit magnetron sputtering.
And the fifth step comprises ultrasonic cleaning, vacuum drying and plastic packaging.
Preferably, a finished target cleaning, drying and packaging production line is built in the fifth step, and the surface quality can meet the electronic grade requirement according to the process operations of ultrasonic cleaning, blow-drying, vacuum inner packaging, intermediate packaging, outer packaging, inspection and boxing.
In the invention, the purity of the high-purity copper and copper alloy target material is 99.99 percent (4N), 99.995 percent (4N5), 99.999 percent (5N) and 99.9999 percent (6N), the oxygen content is less than or equal to 10ppm, and the carbon content is less than or equal to 5 ppm.
The high-purity copper alloy target comprises but is not limited to a high-purity copper-manganese alloy target (the content of Mn element is 0.2-1.0 at%) and a high-purity copper-aluminum alloy target (the content of Al element is 0.05-1.0 at%).
Embodiments of the present invention will be described in detail below with reference to examples and drawings, by which how to apply technical means to solve technical problems and achieve a technical effect can be fully understood and implemented.
Example 1
A12-inch EMI type high-purity copper target with the purity of 4N5 is manufactured, and the whole process is shown in a figure 1:
smelting and casting: the raw material adopts a high-purity electrolytic copper plate, the purity is more than or equal to 99.999 percent, the oxygen content is less than or equal to 15ppm, the carbon content is less than or equal to 10ppm, and the surface is clean and has no oxidation and no oil stain. The electrolytic copper plate is gradually heated to full melting in a vacuum induction melting furnace according to the power supply power of 20-40-60-100-120 kw. The melt is transferred to a casting ladle after being refined and degassed for 10-15 min, and then is kept stand for 5-10 min and then is cast, the ingot pulling speed is 30-60 mm/min, and the specification of the ingot is that the width is multiplied by the thickness and the length is multiplied by 200 multiplied by 150 multiplied by 1000mm3。
Hot rolling: before hot rolling, preheating the square ingot at 500 ℃/3h, heating the ingot along with a furnace, and timing when the temperature is reached, wherein the furnace temperature fluctuation at each part of a heat treatment furnace is not more than +/-5 ℃. And (3) rapidly transferring the ingot to a hot rolling process after the ingot is discharged from the furnace, and performing bidirectional rolling deformation on the square ingot by using a large-tonnage wide hot rolling mill, wherein the deformation pass is 150 → 135 → 121 → 102 → 87 → 70 → 56 → 45 → 37 → 29 → 25, and the total deformation is 83%.
Heat treatment; and (3) carrying out isothermal annealing heat treatment on the hot-rolled plate blank at the temperature of 250 ℃/2h to remove residual stress, heating the ingot along with the furnace, and when the temperature is up, enabling the furnace temperature fluctuation at each part of the heat treatment furnace not to exceed +/-5 ℃. And leveling the slab when the slab is hot after the slab is discharged from the furnace. The metallographic microstructure of the slab is shown in FIG. 2, and the average grain size is 80 μm.
Cutting: according to the EMI high-purity copper target process drawing, a metal target blank with the width multiplied by the thickness multiplied by the length of 145 multiplied by 25 multiplied by 800mm3 is cut by a water jet cutter, and the subsequent machining process is carried out.
Machining: and (3) processing the front surface, the back surface and the side surface of the target blank by using a numerical control end mill to obtain a target finished product, wherein a finished product dimension schematic diagram of the EMI high-purity copper target is shown in figure 3.
Cleaning, drying and packaging: ultrasonic cleaning, vacuum drying and plastic packaging are adopted. According to the process operation of preparation → ultrasonic cleaning → drying → vacuum inner packing → middle packing → outer packing → inspection → packing, the surface quality reaches the requirement of electronic grade.
All of the above mentioned intellectual property rights are not intended to be restrictive to other forms of implementing the new and/or new products. Those skilled in the art will take advantage of this important information, and the foregoing will be modified to achieve similar performance. However, all modifications or alterations are based on the new products of the invention and belong to the reserved rights.
The foregoing is directed to preferred embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. However, any simple modification, equivalent change and modification of the above embodiments according to the technical essence of the present invention are within the protection scope of the technical solution of the present invention.
Claims (10)
1. A short-process high-efficiency high-purity copper and copper alloy sputtering target preparation method is characterized by comprising the following steps: the method comprises the following steps:
firstly, preparing a high-purity square ingot, obtaining a high-purity metal melt through smelting, and obtaining a large-size square ingot by using a vertical ingot pulling mechanism;
secondly, preparing a hot-rolled thick plate, namely rolling and deforming the square cast ingot prepared in the first step by adopting a large-tonnage wide hot rolling mill, and controlling the final rolling thickness to obtain a plate blank with the target thickness;
step three, carrying out isothermal annealing heat treatment, namely carrying out isothermal annealing treatment by using a high-precision temperature control box type heat treatment furnace to remove residual stress;
fourthly, machining the target;
and fifthly, post-processing.
2. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1, which is characterized in that: in the first step, vacuum induction melting or electron beam melting is adopted for melting.
3. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1 or 2, which is characterized by comprising the following steps: the first step is to obtain a clean melt by vacuum induction melting or electron beam melting, and obtain a square ingot with a good surface and no defect inside by a lower ingot drawing mechanism in a semi-continuous casting mode under a vacuum state.
4. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1 or 2, which is characterized by comprising the following steps: the thickness of the square cast ingot is 100-300 mm.
5. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1 or 2, which is characterized by comprising the following steps: in the second step, before hot rolling, the square ingot in the first step is preheated at 400-600 ℃ for 2-6 hours, the ingot can be heated along with the furnace, and when the temperature reaches a set value, the furnace temperature fluctuation at each part of the heat treatment furnace is not more than +/-5 ℃.
6. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1 or 2, which is characterized by comprising the following steps: in the second step, the final rolling thickness is determined by rolling deformation calculation, and the deformation is 60-90% generally.
7. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1 or 2, which is characterized by comprising the following steps: and in the third step, the heat treatment temperature is 200-300 ℃, the heat preservation time is 1-3 hours, the plate blank can be heated along with the furnace, and when the temperature is measured, the furnace temperature fluctuation at each part of the heat treatment furnace is not more than +/-5 ℃.
8. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1 or 2, which is characterized by comprising the following steps: and the fourth step is specifically to cut the metal target blank by water jet cutting or linear cutting, and process the front, back and side of the target blank by a numerical control machine tool to obtain a target finished product.
9. The method for preparing the short-flow high-efficiency high-purity copper and copper alloy sputtering target material according to claim 1 or 2, which is characterized by comprising the following steps: and the fifth step comprises ultrasonic cleaning, vacuum drying and plastic packaging.
10. The target material prepared by the short-process high-efficiency high-purity copper and copper alloy sputtering target material preparation method is 1-9.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534350A (en) * | 2012-02-27 | 2012-07-04 | 湖南中精伦金属材料有限公司 | Manufacturing method of novel iron-base alloy target |
| CN103667768A (en) * | 2013-12-24 | 2014-03-26 | 济源豫金靶材科技有限公司 | Silver target manufacturing method |
| CN109778126A (en) * | 2019-03-13 | 2019-05-21 | 安泰天龙（天津）钨钼科技有限公司 | A kind of preparation method of high-densit Ultra-fine Grained large scale molybdenum target material |
| CN110218981A (en) * | 2019-06-28 | 2019-09-10 | 先导薄膜材料（广东）有限公司 | A kind of copper gallium target and preparation method thereof |
| CN111286703A (en) * | 2020-03-31 | 2020-06-16 | 贵研铂业股份有限公司 | Nickel-platinum alloy sputtering target material and preparation method thereof |
| CN111451314A (en) * | 2020-04-01 | 2020-07-28 | 东莞市欧莱溅射靶材有限公司 | Preparation method of high-purity copper rotary target |
-
2021
- 2021-11-19 CN CN202111401765.2A patent/CN114196926A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534350A (en) * | 2012-02-27 | 2012-07-04 | 湖南中精伦金属材料有限公司 | Manufacturing method of novel iron-base alloy target |
| CN103667768A (en) * | 2013-12-24 | 2014-03-26 | 济源豫金靶材科技有限公司 | Silver target manufacturing method |
| CN109778126A (en) * | 2019-03-13 | 2019-05-21 | 安泰天龙（天津）钨钼科技有限公司 | A kind of preparation method of high-densit Ultra-fine Grained large scale molybdenum target material |
| CN110218981A (en) * | 2019-06-28 | 2019-09-10 | 先导薄膜材料（广东）有限公司 | A kind of copper gallium target and preparation method thereof |
| CN111286703A (en) * | 2020-03-31 | 2020-06-16 | 贵研铂业股份有限公司 | Nickel-platinum alloy sputtering target material and preparation method thereof |
| CN111451314A (en) * | 2020-04-01 | 2020-07-28 | 东莞市欧莱溅射靶材有限公司 | Preparation method of high-purity copper rotary target |
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