CN114190003A - Thick film re-electroplated ceramic substrate and preparation method thereof - Google Patents
Thick film re-electroplated ceramic substrate and preparation method thereof Download PDFInfo
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- CN114190003A CN114190003A CN202111466541.XA CN202111466541A CN114190003A CN 114190003 A CN114190003 A CN 114190003A CN 202111466541 A CN202111466541 A CN 202111466541A CN 114190003 A CN114190003 A CN 114190003A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 99
- 238000009713 electroplating Methods 0.000 claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052802 copper Inorganic materials 0.000 claims abstract description 40
- 239000010949 copper Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002002 slurry Substances 0.000 claims abstract description 18
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000007639 printing Methods 0.000 claims abstract description 13
- 239000002335 surface treatment layer Substances 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 11
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 238000001723 curing Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 238000001029 thermal curing Methods 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 4
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000016 photochemical curing Methods 0.000 claims description 3
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 125000004494 ethyl ester group Chemical group 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000010931 gold Substances 0.000 abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract 1
- 239000004332 silver Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0085—Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a thick film re-electroplating ceramic substrate and a preparation method thereof. The preparation method comprises the following steps: firstly, printing thick film metal slurry on the surface of a ceramic substrate, and sintering to form a thick film conductive layer; then printing conductive glue and insulating glue in the non-thick film conductive layer area to be used as an electroplating conductive layer and an electroplating mask layer respectively; then, electroplating and depositing a copper layer on the surface of the thick film conductive layer by an electroplating process, and dissolving the electroplating conductive layer and the electroplating mask layer by a solvent after the electroplating is finished; and finally, depositing a surface treatment layer on the electroplated copper layer and the thick film conductive layer by a chemical plating process to obtain the thick film re-electroplated ceramic substrate. According to the preparation method, the ceramic substrate is prepared through thick film printing and re-electroplating technologies, the preparation process is simple, patterning processes such as photoetching development and the like are omitted, meanwhile, expensive gold-based slurry is replaced by low-cost conductive slurry, and the manufacturing cost is effectively reduced.
Description
Technical Field
The invention belongs to the technical field of electronic device manufacturing, and particularly relates to a thick film re-electroplated ceramic substrate and a preparation method thereof.
Background
Compared with traditional packaging substrates such as Printed Circuit Boards (PCB), metal circuit boards (MCPCB) and the like, the ceramic circuit board has the advantages of good heat conduction and heat resistance, small thermal expansion coefficient, high insulation, corrosion resistance, radiation resistance and the like, and is widely applied to the fields of aerospace, weaponry, deep sea drilling and the like.
At present, in order to ensure the service stability of military devices and prolong the service life of the devices, gold-based slurry is generally printed on the surface of a ceramic substrate and then sintered to prepare a ceramic circuit board. In order to meet the requirement of large current transmission, gold-based slurry with high gold content must be used, and even multiple screen printing and sintering are required. However, the gold-based paste is expensive, which greatly increases the manufacturing cost of the electronic device. Therefore, the industry considers that the thick film printed ceramic circuit board is prepared by adopting silver-based and copper-based slurry, but because the silver circuit layer has poor electromigration resistance (the circuit layer can generate short circuit, open circuit and the like after long-term service), the copper-based slurry has complex sintering process and high difficulty, is easy to oxidize at high temperature and seriously influences the service stability of devices. Therefore, it is necessary to improve the existing ceramic circuit board preparation technology to meet the application requirements of military electronic devices in severe environments such as high temperature, large temperature change, high humidity and the like.
Disclosure of Invention
Aiming at the defects or the improvement requirements of the prior art, the invention provides a thick film re-electroplated ceramic substrate which specifically comprises a ceramic substrate, a thick film conductive layer, an electroplated copper layer and a surface treatment layer. The thick film re-electroplating ceramic substrate prepared by combining the screen printing technology and the electroplating technology saves the process steps of traditional circuit board photoetching development and the like, has simple preparation process, and effectively reduces the manufacturing cost by adopting low-cost metal slurry to replace expensive gold-based slurry. In addition, the thickness of a copper layer can be effectively regulated and controlled through an electroplating technology, the current carrying capacity of the ceramic circuit board is greatly improved, the radio frequency loss is reduced, and the packaging requirements of military devices such as high power, high frequency and the like are met.
The invention provides a thick film re-electroplating ceramic substrate which comprises a ceramic substrate, a thick film conductive layer, an electroplating copper layer and a surface treatment layer, wherein the thick film conductive layer is prepared by adopting screen printing metal slurry and a sintering process, the electroplating copper layer is directly deposited on the thick film conductive layer, and the electroplating copper layer and the thick film conductive layer are coated by the surface treatment layer.
Wherein the thickness of the thick film conductive layer is 10-30 μm.
Wherein the metal slurry is conductive silver slurry, conductive copper slurry or conductive nickel slurry, and the sintering temperature is 150-800 ℃.
Wherein the thickness of the electroplated copper layer is 30-300 μm.
Wherein the surface treatment layer is Ag, Ni-Au or Ni-Pd-Au, and the thickness is 3-10 μm.
Accordingly, according to one aspect of the present invention, there is provided a method of preparing a thick film re-electroplated ceramic substrate, characterized in that it comprises the steps of:
(1) uniformly printing metal slurry on the surface of the ceramic substrate by a screen printing technology, and forming a thick film conductive layer after sintering;
(2) conducting glue is screen-printed on the non-thick film conducting layer area of the ceramic substrate, and an electroplating conducting layer is formed by solidification;
(3) screen printing insulating glue on the surface area of the electroplated conductive layer of the ceramic substrate, and curing to form an electroplated mask layer;
(4) putting the ceramic substrate obtained in the step (3) into an electroplating solution, and depositing a copper layer on the surface of the thick film conductive layer through an electroplating process;
(5) putting the ceramic substrate obtained in the step (4) into a solvent, and dissolving to remove the electroplating conducting layer and the electroplating mask layer;
(6) and (5) putting the ceramic substrate obtained in the step (5) into chemical plating solution, and depositing a surface treatment layer on the electroplated copper layer and the thick film conductive layer through a chemical plating process to obtain a thick film re-electroplated ceramic substrate.
Further, in the step (1), the thickness of the screen printing layer is 10 to 30 μm.
Further, in the step (1), the metal paste is conductive silver paste, conductive copper paste or conductive nickel paste, and the sintering temperature is 150-800 ℃.
Further, in the step (2), the conductive adhesive is conductive silver adhesive, conductive copper adhesive, conductive polymer or conductive carbon adhesive, the printing thickness is 10-30 μm, and the curing mode is thermal curing or light curing, which is the same as the thickness of the thick film conductive layer.
Further, in the step (3), the insulating glue is high temperature resistant resin such as Polyimide (PI), liquid crystal resin (LCP), benzocyclobutene (BCB), ABF, etc., the printing thickness is 30-300 μm, and the curing manner is thermal curing or photo curing.
Further, in the step (4), the thickness of the electroplated copper layer is 30-300 μm, which is the same as the thickness of the electroplated mask layer.
Further, in the step (5), the solvent is one of sodium hydroxide solution, absolute ethyl alcohol, acetone, diethyl ether, butyl ester, ethyl ester, or vinyl chloride, and a combination thereof.
Further, in the step (6), the surface treatment layer is Ag, Ni-Au or Ni-Pd-Au, and the thickness is 3-10 μm.
Generally, compared with the prior art, the technical scheme of the invention has the advantages that the preparation process is simple, the high-performance ceramic circuit board can be prepared by the screen printing and electroplating technologies, the complicated processes such as photoetching and developing of the traditional circuit board and the investment of expensive equipment are omitted, the thickness of a copper layer can be effectively regulated and controlled by the electroplating technology, the current-carrying capacity of the ceramic circuit board can be greatly improved, and the radio frequency loss is reduced. More importantly, the technical scheme of the patent conception avoids using high-cost gold-based slurry, utilizes low-cost metal slurry as a conducting layer, and combines an electroplating thickening process to meet the requirements of military devices on high-temperature, high-current and high-reliability packaging.
Drawings
FIG. 1 is a schematic diagram of a thick film re-electroplated ceramic substrate structure according to the present invention.
FIG. 2 is a flow chart of a thick film re-electroplated ceramic substrate preparation process provided by the present invention.
The reference symbols associated with the figures are as follows:
11 denotes a ceramic substrate, 12 denotes a thick film conductive layer, 13 denotes an electroplated copper layer, 14 denotes a surface treatment layer, 21 denotes a ceramic substrate, 22 denotes a thick film conductive layer, 23 denotes an electroplated conductive layer, 24 denotes an electroplated mask layer, 25 denotes an electroplated copper layer, and 26 denotes a surface treatment layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention. In addition, the technical features mentioned in the embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 2, embodiment 1 provides a method for preparing a thick film re-electroplated ceramic substrate, which specifically includes the following steps:
step 1, printing metal silver paste on the surface of an aluminum nitride ceramic substrate by a screen printing technology, and sintering to form a thick film conductive silver layer, wherein the sintering temperature is 750 ℃, and the thickness of the conductive silver layer is 10 microns;
step 2, screen-printing conductive silver paste on a non-thick film conductive layer region of the aluminum nitride ceramic substrate, and performing heat curing at 150 ℃ for 30 minutes to form an electroplated conductive layer with the thickness of about 10 microns;
step 3, printing liquid crystal resin (LCP) glue on a steel mesh on the surface of the aluminum nitride ceramic substrate electroplating conductive layer, and forming an electroplating mask layer after thermocuring, wherein the thickness is 300 mu m;
step 4, putting the ceramic substrate obtained in the step 3 into a copper electroplating solution, and depositing a copper layer on the thick film conductive layer region through electroplating, wherein the thickness of the copper layer is 300 microns and is the same as that of the LCP glue layer;
step 5, putting the ceramic substrate obtained in the step 4 into a combined solvent of acetone and butyl ester, ultrasonically dissolving for 30 minutes, and removing the electroplating conductive layer and the electroplating mask layer;
and 6, putting the ceramic substrate obtained in the step 5 into Ni-Au chemical plating solution, and depositing a Ni-Au layer with the total thickness of 3.0 mu m on the electroplated copper layer and the thick film conductive layer by using a chemical plating technology to prepare a thick film re-electroplated ceramic substrate.
Example 2
Referring to fig. 2, embodiment 2 provides a method for preparing a thick film re-electroplated ceramic substrate, which specifically includes the following steps:
step 1, printing metal copper paste on the surface of an alumina ceramic substrate by a screen printing technology, and forming a thick film conductive copper layer after sintering, wherein the sintering temperature is 680 ℃, and the thickness of the conductive copper layer is 30 microns;
step 2, printing conductive silver paste on the non-thick film conductive layer area of the alumina ceramic substrate in a thick film mode, and performing thermocuring at 100 ℃ for 120 minutes to form an electroplating conductive layer, wherein the thickness is 30 microns;
step 3, thick film printing polyimide glue on the electroplating conductive layer region of the alumina ceramic substrate, and thermally curing at 200 ℃ for 60 minutes to form an electroplating mask layer with the thickness of 30 mu m;
step 4, putting the ceramic substrate obtained in the step 3 into a copper electroplating solution, and depositing a copper layer on the surface of the thick-film conductive copper layer by electroplating, wherein the thickness of the copper layer is 30 microns and is the same as that of the PI glue layer;
step 5, putting the ceramic substrate obtained in the step 4 into a combined solvent of ether and chloroethylene, ultrasonically dissolving for 20 minutes, and removing the electroplating conductive layer and the electroplating mask layer;
and 6, putting the ceramic substrate obtained in the step 5 into Ni-Pd-Au chemical plating solution, and depositing a Ni-Pd-Au layer with the total thickness of 10 mu m on the electroplated copper layer and the thick film conductive layer by using a chemical plating technology to prepare a thick film re-electroplated ceramic substrate.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of this invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of this invention should be included within the scope of protection of this invention.
Claims (9)
1. A thick film re-electroplating ceramic substrate comprises a ceramic substrate, a thick film conductive layer, an electroplating copper layer and a surface treatment layer, and is characterized in that the thick film conductive layer is prepared by adopting screen printing metal slurry and a sintering process, the electroplating copper layer is directly deposited on the thick film conductive layer, and the electroplating copper layer and the thick film conductive layer are coated by the surface treatment layer.
2. The thick film repolarized ceramic substrate of claim 1 wherein said thick film conductive layer is 10-30 μm thick.
3. The thick film re-electroplated ceramic substrate of claim 1, wherein said metal paste is conductive silver paste, conductive copper paste or conductive nickel paste, and the sintering temperature is 150-800 ℃.
4. A thick film repolarized ceramic substrate according to any one of claims 1 to 3 wherein said electroplated copper layer is 30 to 300 μm thick.
5. A thick film re-electroplated ceramic substrate of any of claims 1 to 3, wherein the surface treatment layer is Ag, Ni-Au or Ni-Pd-Au with a thickness of 3 to 10 μm.
6. A method of preparing a thick film repolarized ceramic substrate according to any one of claims 1 to 5 comprising the steps of:
(a) coating metal slurry on the surface of a ceramic substrate by a screen printing technology, and forming a thick film conductive layer after sintering;
(b) conducting glue is screen-printed on the non-thick film conducting layer area of the ceramic substrate, and an electroplating conducting layer is formed after solidification;
(c) screen printing insulating glue on the surface of the ceramic substrate electroplating conductive layer, and forming an electroplating mask layer after curing;
(d) putting the ceramic substrate obtained in the step (c) into an electroplating solution, and depositing an electroplating copper layer on the surface of the thick film conductive layer through an electroplating process;
(e) putting the ceramic substrate obtained in the step (d) into a solvent, and dissolving to remove the electroplating conductive layer and the electroplating mask layer;
(f) and (e) putting the ceramic substrate obtained in the step (e) into chemical plating solution, and depositing a surface treatment layer on the electroplated copper layer and the thick film conductive layer by using a chemical plating technology to obtain a thick film electroplated ceramic substrate.
7. The method for preparing a thick film re-electroplated ceramic substrate as claimed in claim 6, wherein said conductive paste is conductive silver paste, conductive copper paste, conductive polymer or conductive carbon paste, the printing thickness is 10-30 μm, the same as the thickness of the thick film conductive layer, and the curing method is thermal curing or photo curing.
8. The method for preparing a thick film re-electroplated ceramic substrate of any one of claims 6 to 7, wherein the insulating paste is Polyimide (PI), liquid crystal resin (LCP), benzocyclobutene (BCB), ABF high temperature resistant resin, the printing thickness is 30 to 300 μm, the same thickness as the electroplated copper layer, and the curing mode is thermal curing or photo curing.
9. The method of any one of claims 6-7, wherein the solvent is one of sodium hydroxide solution, absolute ethanol, acetone, ethyl ether, butyl ester, ethyl ester, or vinyl chloride, and combinations thereof.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111466541.XA CN114190003A (en) | 2021-12-03 | 2021-12-03 | Thick film re-electroplated ceramic substrate and preparation method thereof |
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| CN202111466541.XA CN114190003A (en) | 2021-12-03 | 2021-12-03 | Thick film re-electroplated ceramic substrate and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115474345A (en) * | 2022-09-14 | 2022-12-13 | 东华大学 | Method for manufacturing ceramic fabric circuit based on screen printing and chemical deposition |
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2021
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115474345A (en) * | 2022-09-14 | 2022-12-13 | 东华大学 | Method for manufacturing ceramic fabric circuit based on screen printing and chemical deposition |
| CN115474345B (en) * | 2022-09-14 | 2023-04-28 | 东华大学 | Ceramic fabric circuit manufacturing method based on screen printing and chemical deposition |
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