CN114189215A - Radio frequency power amplifying circuit and radio frequency front end module - Google Patents
Radio frequency power amplifying circuit and radio frequency front end module Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a radio frequency power amplifying circuit and a radio frequency front end module, wherein the radio frequency power amplifying circuit comprises an input conversion circuit, a Doherty power amplifier and a first power amplifier; an input conversion circuit configured to receive a radio frequency input signal and output a first radio frequency signal and a second radio frequency signal; the doherty power amplifier is coupled to the first output end of the input conversion circuit and is configured to receive a first radio frequency signal and output a first amplified signal; the first power amplifier is coupled to the second output terminal of the input conversion circuit and configured to receive the second radio frequency signal and output a second amplified signal. The technical scheme can ensure the linearity of the Doherty power amplifier in the radio frequency power amplifying circuit.
Description
Technical Field
The present invention relates to the field of radio frequency technologies, and in particular, to a radio frequency power amplifying circuit and a radio frequency front end module.
Background
Modern wireless communication devices or systems, such as fourth generation (4G) wireless communication devices and systems, and fifth generation (5G) wireless communication devices and systems, operate with modulated signals having high peak-to-average power ratios. As described above, in the conventional wireless communication device or system, the Doherty Power Amplifier (DPA) must maintain high linearity in a certain broadband frequency range, and therefore, it is a technical problem to be solved at present to improve the linearity of the doherty power amplifier in a certain broadband frequency range.
Disclosure of Invention
The embodiment of the invention provides a radio frequency power amplifying circuit and a radio frequency front end module, which are used for solving the problem of low linearity of a Doherty power amplifier in the radio frequency power amplifying circuit.
A radio frequency power amplifying circuit comprises an input conversion circuit, a Doherty power amplifier and a first power amplifier;
the input conversion circuit is configured to receive a radio frequency input signal and output a first radio frequency signal and a second radio frequency signal;
the doherty power amplifier is coupled to the first output terminal of the input conversion circuit and configured to receive the first radio frequency signal and output a first amplified signal;
the first power amplifier is coupled to the second output of the input conversion circuit and configured to receive the second radio frequency signal and output a second amplified signal.
Further, when the gain of the doherty power amplifier is in an upward trend, the gain of the first power amplifier is in a downward trend.
Further, the doherty power amplifier comprises a carrier amplifying circuit and a peak amplifying circuit, and when a first gain difference value is smaller than a first threshold value, the gain of the first power amplifier is in a descending trend, where the first gain difference value is a difference value between a descending amplitude of the gain of the carrier amplifying circuit and an ascending amplitude of the gain of the peak amplifying circuit in the same time period.
Further, when the gain of the doherty power amplifier is in a descending trend, the gain of the first power amplifier is in an ascending trend.
Further, the doherty power amplifier comprises a carrier amplifying circuit and a peak amplifying circuit;
the first power amplifier comprises a first power amplifier and a first bias circuit;
the first bias circuit is configured to provide a first bias signal to the first power amplifier to cause the gain of the first power amplifier to increase when the gain of the doherty power amplifier decreases.
Further, the first power amplifier operates in a class C state or a class AB state.
Further, the input conversion circuit includes a first balun, a first input terminal of the first balun is configured to receive a radio frequency input signal, a second input terminal of the first balun is connected to a ground terminal, a first output terminal of the first balun is connected to the input terminal of the doherty power amplifier, and a second output terminal of the first balun is connected to the input terminal of the first power amplifier.
Further, the radio frequency power amplification circuit further comprises an input impedance matching circuit configured such that an impedance of the doherty power amplifier input is the same as an impedance of the first power amplifier input.
Further, the radio frequency power amplification circuit further comprises an output impedance matching circuit configured such that an impedance of the doherty power amplifier output is the same as an impedance of the first power amplifier output.
A radio frequency front end module comprises the radio frequency power amplifying circuit.
The radio frequency power amplifying circuit comprises an input conversion circuit, a Doherty power amplifier and a first power amplifier; an input conversion circuit configured to receive a radio frequency input signal and output a first radio frequency signal and a second radio frequency signal; the doherty power amplifier is coupled to the first output end of the input conversion circuit and is configured to receive a first radio frequency signal and output a first amplified signal; the first power amplifier is coupled to the second output terminal of the input conversion circuit and configured to receive the second radio frequency signal and output a second amplified signal. When the gain of the Doherty power amplifier shows an expansion or compression trend, the first power amplifier adjusts the gain of the Doherty power amplifier, so that the gain flatness of the Doherty power amplifier is ensured, and the linearity of the Doherty power amplifier is further ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a circuit diagram of an rf power amplifier circuit according to an embodiment of the invention;
FIG. 2 is another circuit diagram of the RF power amplifier circuit according to an embodiment of the present invention;
FIG. 3 is another circuit diagram of the RF power amplifier circuit according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a gain curve of the rf power amplifier circuit according to an embodiment of the invention.
In the figure: 10. an input conversion circuit; 20. a Doherty power amplifier; 30. a first power amplifier; 40. an output conversion circuit; 50. an input impedance matching circuit; 60. and an output impedance matching circuit.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity to indicate like elements throughout.
It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relationship terms such as "under …", "under …", "below", "under …", "above …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
The present embodiment provides a radio frequency power amplifying circuit, as shown in fig. 1, including an input converting circuit 10, a doherty power amplifier 20 and a first power amplifier 30; an input conversion circuit 10 configured to receive a radio frequency input signal and output a first radio frequency signal and a second radio frequency signal; the doherty power amplifier 20 is coupled to the first output terminal of the input conversion circuit 10, and configured to receive the first radio frequency signal and output a first amplified signal; the first power amplifier 30 is coupled to the second output terminal of the input conversion circuit 10, and configured to receive the second radio frequency signal and output a second amplified signal.
In a particular embodiment, the rf power amplifying circuit includes an input switching circuit 10, the input switching circuit 10 being configured to receive an rf input signal and output a first rf signal and a second rf signal. The radio frequency input signal is a radio frequency signal to be amplified. It should be noted that, the first rf signal and the second rf signal have the same magnitude, the phase difference between the first rf signal and the second rf signal is 180 degrees, and the doherty power amplifier 20 and the first power amplifier 30 are equivalent to two balanced amplification branches to amplify the first rf signal and the second rf signal respectively. In the present embodiment, the input converting circuit 10 may be any type or structure of existing circuit that can convert an rf input signal into a first rf signal and a second rf signal. Preferably, the input conversion circuit 10 is a balun.
In a specific embodiment, the rf power amplifying circuit further includes a doherty power amplifier 20 and a first power amplifier 30, the doherty power amplifier 20 being coupled to the first output terminal of the input converting circuit 10, configured to receive the first rf signal, and output a first amplified signal. The first power amplifier 30 is coupled to the second output terminal of the input conversion circuit 10, and configured to receive the second radio frequency signal and output a second amplified signal. The first amplified signal and the second amplified signal have the same magnitude, and the phase difference between the first amplified signal and the second amplified signal is 180 degrees.
In one embodiment, the doherty power amplifier 20 includes a signal splitter B21, a carrier amplifying circuit M21, a peak amplifying circuit M22, and a signal combiner B22.
As an example, an input terminal of the demultiplexer B21 is coupled to a first output terminal of the input conversion circuit 10, a first output terminal of the demultiplexer B21 is coupled to an input terminal of the carrier amplifying circuit M21, and a second output terminal of the demultiplexer B21 is coupled to an input terminal of the peak amplifying circuit M22, and is configured to perform demultiplexing on the first radio frequency signal, output the first carrier signal to the carrier amplifying circuit M21, and output the first peak signal to the peak amplifying circuit M22. The carrier amplification circuit M21 is configured to perform amplification processing on the first carrier signal and output a first carrier amplified signal. The peak amplification circuit M22 is configured to perform amplification processing on the first peak signal, and output a first peak amplified signal. A first input of the signal combiner B22 is coupled to the output of the carrier amplifying circuit M21, a second input of the signal combiner B22 is coupled to the output of the peak amplifying circuit M22, and an output of the signal combiner B22, which is the output of the doherty power amplifier 20, is configured to combine the first carrier amplified signal and the first peak amplified signal and output the first amplified signal.
In the present example, as shown by curve 1 in fig. 4, in the doherty power amplifier 20, when the power of the carrier amplifying circuit M21 reaches a preset power, for example: when the carrier amplifying circuit M21 approaches or reaches saturation, it is determined that the power of the carrier amplifying circuit M21 reaches a preset power, the peak amplifying circuit M22 starts to operate, at this time, due to the fact that the peak amplifying circuit M22 is connected, the overall impedance presented by the doherty power amplifier 20 decreases, so that the gain of the doherty power amplifier 20 starts to decrease, that is, the gain of the doherty power amplifier 20 is in a downward trend, and as the power of the peak amplifying circuit M22 gradually increases, the gain of the doherty power amplifier 20 starts to increase in a upward trend, so that the linearity of the doherty power amplifier 20 is not ideal.
In order to solve the above problem, in the present embodiment, by coupling the first power amplifier 30 to the second output terminal of the input conversion circuit 10, as shown by curve 2 in fig. 4, the carrier amplifying circuit M21 starts to operate simultaneously with the first power amplifier 30, the carrier amplifying circuit M21 amplifies the first radio frequency signal, and the first power amplifier 30 amplifies the second radio frequency signal. When the power of the carrier amplifying circuit M21 reaches the preset power, and the peak amplifying circuit M22 starts to operate, the gain of the doherty power amplifier 20 starts to decrease, and at this time, the gain of the first power amplifier 30 is made to be in an increasing trend, so that the gain loss of the doherty power amplifier 20 due to the decrease of the gain is compensated, and the flatness of the gain of the doherty power amplifier 20 is ensured. When the power of the peak amplifying circuit M22 gradually increases, the gain of the doherty power amplifier 20 changes from a downward trend to an upward trend, and at this time, the gain of the first power amplifier 30 is made to be a downward trend, so as to avoid the gain expansion phenomenon of the doherty power amplifier 20, and further achieve the purpose of improving the gain flatness of the doherty power amplifier 20. Curve 3 in fig. 4 is the gain curve of the doherty power amplifier 20 under the influence of the first power amplifier 30.
In the present embodiment, the radio frequency power amplifying circuit includes an input conversion circuit 10, a doherty power amplifier 20, and a first power amplifier 30; an input conversion circuit 10 configured to receive a radio frequency input signal and output a first radio frequency signal and a second radio frequency signal; the doherty power amplifier 20 is coupled to the first output terminal of the input conversion circuit 10, and configured to receive the first radio frequency signal and output a first amplified signal; the first power amplifier 30 is coupled to the second output terminal of the input conversion circuit 10, and configured to receive the second radio frequency signal and output a second amplified signal. The first power amplifier 30 adjusts the gain of the doherty power amplifier 20 when the gain of the doherty power amplifier 20 is expanded or compressed, so as to ensure the gain flatness of the doherty power amplifier 20 and further ensure the linearity of the doherty power amplifier 20.
Alternatively, as shown in fig. 3, the rf power amplifying circuit includes an output switching circuit 40, a first input terminal of the output switching circuit 40 is connected to the output terminal of the doherty power amplifier 20, and a second input terminal of the output switching circuit 40 is connected to the output terminal of the first power amplifier 30, and is configured to receive the first amplified signal and the second amplified signal and output the rf amplified signal. Optionally, the output conversion circuit 40 includes a second balun B41, a first input of the second balun B41 is connected to the output of the doherty power amplifier 20 and configured to receive the first amplified signal, a second input of the second balun B41 is connected to the output of the first power amplifier 30 and configured to receive the second amplified signal, a first output of the second balun B41 is configured to output the radio frequency amplified signal, and a first output of the second balun B41 is configured to be connected to the ground.
In one embodiment, the first power amplifier 30 is configured to decrease the gain of the first power amplifier 30 when the gain of the doherty power amplifier 20 increases.
In the present embodiment, the first power amplifier 30 is configured such that the gain of the first power amplifier 30 is in a downward trend while the doherty power amplifier 20 is in an upward trend. Since the gain of the doherty power amplifier 20 changes from a descending trend to an ascending trend, the gain of the doherty power amplifier 20 fluctuates greatly, and the linearity of the doherty power amplifier 20 is affected, so that the first power amplifier 30 of the present embodiment makes the gain of the first power amplifier 30 in a descending trend when the doherty power amplifier 20 is in the ascending trend, so as to maintain the flatness of the gain of the doherty power amplifier 20, and thus ensure the linearity of the doherty power amplifier 20.
In an embodiment, the doherty power amplifier 20 includes a carrier amplifier circuit M21 and a peak amplifier circuit M22, and the gain of the first power amplifier 30 is made to be in a downward trend when a first gain difference value is smaller than a first threshold, where the first gain difference value is a difference value between a downward amplitude of the gain of the carrier amplifier circuit M21 and an upward amplitude of the gain of the peak amplifier circuit M22 in the doherty power amplifier 20 in the same time period.
The first threshold value is a numerical value which is self-defined by a user according to actual requirements. In one embodiment, the first threshold is undesirably large to ensure the gain flatness of the doherty pa 20 and ensure that the gain of the first pa 30 is decreased in a proper time period.
In the present embodiment, the first gain difference value is a difference value between a falling amplitude of the gain of the carrier amplification circuit M21 in the doherty power amplifier 20 and a rising amplitude of the gain of the peak amplification circuit M22 in the doherty power amplifier 20. If the first gain difference is smaller than the first threshold, it indicates that the decrease of the gain of the carrier amplifier circuit M21 is close to the increase of the gain of the peak amplifier circuit M22 in the same time period, and the overall gain of the doherty power amplifier 20 tends to be flat. In an embodiment, when the carrier amplifier circuit M21 and the peak amplifier circuit M22 work together, the gain of the carrier amplifier circuit M21 starts to decrease, and the peak amplifier circuit M22 starts to increase, and initially, because the decreasing trend of the gain of the carrier amplifier circuit M21 is greater than the increasing trend of the peak amplifier circuit M22, the overall gain of the doherty power amplifier 20 still decreases, but as the power of the peak amplifier circuit M22 increases gradually, the decreasing trend of the gain of the carrier amplifier circuit M21 and the increasing trend of the peak amplifier circuit M22 reach a balance/the same at a certain time, and then the decreasing trend of the gain of the carrier amplifier circuit M21 is gradually less than the increasing trend of the peak amplifier circuit M22, so that the overall gain of the doherty power amplifier 20 starts to increase. In this embodiment, when the first gain difference is smaller than the first threshold, that is, when the downward trend of the gain of the carrier amplifier circuit M21 and the upward trend of the peak amplifier circuit M22 gradually tend to be the same, and the downward trend of the gain of the carrier amplifier circuit M21 starts to be smaller than the upward trend of the peak amplifier circuit M22, that is, when it is stated that the gain of the doherty power amplifier 20 is about to or starts to be in an upward trend, the gain of the first power amplifier 30 is in a downward trend, so that the phenomenon of gain expansion of the doherty power amplifier 20 is avoided, the gain flatness of the doherty power amplifier 20 is improved, and the purpose of improving the linearity of the doherty power amplifier 20 is achieved.
In an embodiment, the first power amplifier 30 is configured to increase the gain of the first power amplifier 30 when the gain of the doherty power amplifier 20 is decreased.
In the present embodiment, when the carrier amplifier circuit M21 and the peak amplifier circuit M22 work together, the gain of the carrier amplifier circuit M21 starts to decrease, the peak amplifier circuit M22 starts to increase, and the overall gain of the doherty power amplifier 20 still decreases as the decrease of the gain of the carrier amplifier circuit M21 is larger than the increase of the peak amplifier circuit M22. Therefore, in the embodiment, when the gain of the doherty power amplifier 20 is in a downward trend, the gain of the first power amplifier 30 is in an upward trend, so that the doherty power amplifier 20 is prevented from being reduced in gain, and the purpose of improving the linearity of the doherty power amplifier 20 is achieved.
In one embodiment, doherty power amplifier 20 includes a carrier amplifying circuit M21 and a peak amplifying circuit M22; the first power amplifier 30 includes a first power amplifier 30 and a first bias circuit; a first bias circuit configured to provide a first bias signal to the first power amplifier 30 to cause the gain of the first power amplifier 30 to increase when the gain of the doherty power amplifier 20 decreases.
In one implementation, the first power amplifier 30 includes the first power amplifier 30 and a first bias circuit; a first bias circuit configured to provide a first bias signal to the first power amplifier 30 to cause the gain of the first power amplifier 30 to increase when the gain of the doherty power amplifier 20 decreases. Illustratively, the first bias circuit is coupled to the input node of the first power amplifier 30, and controls the magnitude of the bias signal output by the first bias circuit to control the magnitude of the power of the first power amplifier 30, thereby achieving the purpose of controlling the magnitude of the gain of the first power amplifier 30. For example, when the gain of the doherty power amplifier 20 is in a downward trend, the first bias circuit is controlled to output a larger bias signal, and under the action of the larger bias signal, the gain of the first power amplifier 30 is gradually increased, so that the gain of the first power amplifier 30 is in an upward trend; when the gain of the doherty power amplifier 20 is in an ascending trend, the first bias circuit is controlled to output a smaller bias signal, and under the action of the smaller bias signal, the gain of the first power amplifier 30 is gradually reduced, so that the gain of the first power amplifier 30 is in a descending trend, the flatness of the gain of the doherty power amplifier 20 is maintained, and the purpose of improving the linearity of the doherty power amplifier 20 is achieved.
In one embodiment, the first power amplifier 30 operates in a class C state or a class AB state. Since the gain curve of the first power amplifier 30 is in a first rising and then falling trend when the first power amplifier 30 is in the class C state or the class AB state, that is, the trend is opposite to the trend of the gain curve of the doherty power amplifier 20 after the carrier amplifying circuit M21 is saturated, in this embodiment, the gain of the first power amplifier 30 is in a falling trend when the gain of the doherty power amplifier 20 is in the class C state or the class AB state, so that the gain of the first power amplifier 30 is in a rising trend, and the gain of the first power amplifier 30 is in a rising trend when the gain of the doherty power amplifier 20 is in a falling trend, thereby improving the gain flatness of the doherty power amplifier 20 and further achieving the purpose of improving the linearity of the doherty power amplifier 20.
In one embodiment, as shown in fig. 1, the input switching circuit 10 includes a first balun B11, a first input terminal of the first balun B11 is configured to receive the rf input signal, a second input terminal of the first balun B11 is connected to the ground terminal, a first output terminal of the first balun B11 is connected to the input terminal of the doherty power amplifier 20, and a second output terminal of the first balun B11 is connected to the input terminal of the first power amplifier 30.
In this embodiment, the input conversion circuit 10 includes a first balun B11, and is configured to receive a radio frequency input signal by configuring a first input terminal of the first balun B11 to receive the radio frequency input signal, connecting a second input terminal of the first balun B11 to a ground terminal, connecting a first output terminal of the first balun B11 to an input terminal of the doherty power amplifier 20, and connecting a second output terminal of the first balun B11 to an input terminal of the first power amplifier 30, so as to receive the radio frequency input signal and output a first radio frequency signal and a second radio frequency signal with the same magnitude and 180 degrees phase difference.
In one embodiment, as shown in fig. 3, the rf power amplifying circuit further includes an input impedance matching circuit 50, the input impedance matching circuit 50 being configured such that the impedance of the input of the doherty power amplifier 20 is the same as the impedance of the input of the first power amplifier 30.
In a specific embodiment, the rf power amplifying circuit further includes an input impedance matching circuit 50, a first input terminal of the input impedance matching circuit 50 is connected to a first output terminal of the input converting circuit 10, a second input terminal of the input impedance matching circuit 50 is connected to a second output terminal of the input converting circuit 10, a first output terminal of the input impedance matching circuit 50 is connected to an input terminal of the doherty power amplifier 20, and a second output terminal of the input impedance matching circuit 50 is connected to an input terminal of the first power amplifier 30, so that the impedance of the input terminal of the doherty power amplifier 20 is the same as the impedance of the input terminal of the first power amplifier 30, thereby ensuring the balance between the first rf signal and the second rf signal and enabling the first rf signal and the second rf signal to be normally amplified.
In a particular embodiment, the input impedance matching circuit 50 includes a first impedance matching circuit and a second impedance matching circuit. The first impedance matching circuit has one end connected to the first output terminal of the input conversion circuit 10 and the other end connected to the input terminal of the doherty power amplifier 20. One end of the second impedance matching circuit is connected to the second output terminal of the input conversion circuit 10, and the other end is connected to the input terminal of the first power amplifier 30. Alternatively, the first impedance matching circuit and the second impedance matching circuit may be, for example, a circuit composed of a capacitor and a resistor, or other circuits capable of achieving impedance matching.
In one embodiment, as shown in fig. 3, the rf power amplifier circuit further includes an output impedance matching circuit 60, the output impedance matching circuit 60 being configured such that the impedance at the output of the doherty power amplifier 20 is the same as the impedance at the output of the first power amplifier 30.
In this embodiment, the rf power amplifier circuit further includes an output impedance matching circuit 60, a first input terminal of the output impedance matching circuit 60 is connected to the output terminal of the doherty power amplifier 20, and a second input terminal of the output impedance matching circuit 60 is connected to the output terminal of the first power amplifier 30, so that the impedance of the output terminal of the doherty power amplifier 20 is the same as the impedance of the output terminal of the first power amplifier 30, so as to ensure the balance between the first amplified signal and the second amplified signal.
In a particular embodiment, the output impedance matching circuit 60 includes a third impedance matching circuit and a fourth impedance matching circuit. Alternatively, the third impedance matching circuit and the fourth impedance matching circuit may be, for example, a circuit composed of a capacitor and a resistor, or other circuits capable of realizing impedance matching.
The present embodiment provides a radio frequency front end module, including the radio frequency power amplifying circuit.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A radio frequency power amplifying circuit is characterized by comprising an input conversion circuit, a Doherty power amplifier and a first power amplifier;
the input conversion circuit is configured to receive a radio frequency input signal and output a first radio frequency signal and a second radio frequency signal;
the doherty power amplifier is coupled to the first output terminal of the input conversion circuit and configured to receive the first radio frequency signal and output a first amplified signal;
the first power amplifier is coupled to the second output of the input conversion circuit and configured to receive the second radio frequency signal and output a second amplified signal.
2. The rf power amplifier circuit as claimed in claim 1, wherein the gain of the first power amplifier is down-going while the gain of the doherty power amplifier is up-going.
3. The rf power amplifier circuit as claimed in claim 2, wherein the doherty power amplifier includes a carrier amplifier circuit and a peaking amplifier circuit, and the gain of the first power amplifier is decreased when a first gain difference is smaller than a first threshold, and the first gain difference is a difference between a decrease of the gain of the carrier amplifier circuit and an increase of the gain of the peaking amplifier circuit in a same time period.
4. The rf power amplifier circuit as claimed in claim 1, wherein the gain of the first power amplifier increases when the gain of the doherty power amplifier decreases.
5. The radio frequency power amplification circuit of claim 1, wherein the doherty power amplifier comprises a carrier amplification circuit and a peaking amplification circuit;
the first power amplifier comprises a first power amplifier and a first bias circuit;
the first bias circuit is configured to provide a first bias signal to the first power amplifier to cause the gain of the first power amplifier to increase when the gain of the doherty power amplifier decreases.
6. The radio frequency power amplification circuit of claim 1, wherein the first power amplifier operates in a class C state or a class AB state.
7. The radio frequency power amplification circuit of claim 1, wherein the input conversion circuit comprises a first balun having a first input configured to receive a radio frequency input signal, a second input coupled to ground, a first output coupled to the input of the doherty power amplifier, and a second output coupled to the input of the first power amplifier.
8. The radio frequency power amplification circuit of claim 1, further comprising an input impedance matching circuit configured such that an impedance of the doherty power amplifier input is the same as an impedance of the first power amplifier input.
9. The radio frequency power amplification circuit of claim 1, further comprising an output impedance matching circuit configured such that an impedance of the doherty power amplifier output is the same as an impedance of the first power amplifier output.
10. A radio frequency front end module comprising the radio frequency power amplification circuit of any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111272163.1A CN114189215A (en) | 2021-10-29 | 2021-10-29 | Radio frequency power amplifying circuit and radio frequency front end module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111272163.1A CN114189215A (en) | 2021-10-29 | 2021-10-29 | Radio frequency power amplifying circuit and radio frequency front end module |
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| Publication Number | Publication Date |
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| CN114189215A true CN114189215A (en) | 2022-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111272163.1A Pending CN114189215A (en) | 2021-10-29 | 2021-10-29 | Radio frequency power amplifying circuit and radio frequency front end module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114915266A (en) * | 2022-05-11 | 2022-08-16 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency amplifying circuit and radio frequency front end module |
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| WO2019084911A1 (en) * | 2017-11-03 | 2019-05-09 | Telefonaktiebolaget Lm Ericsson (Publ) | Doherty power amplifier and radio frequency device comprising the same |
| CN112968679A (en) * | 2021-02-08 | 2021-06-15 | 锐石创芯（深圳）科技有限公司 | Push-pull power amplification system and radio frequency front-end module |
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| CN1805273A (en) * | 2005-01-12 | 2006-07-19 | 华为技术有限公司 | Method for improving efficiency of power amplifier |
| CN1976217A (en) * | 2005-12-01 | 2007-06-06 | 安德鲁公司 | Power amplifier with high gain and high efficiency |
| CN106374845A (en) * | 2015-07-22 | 2017-02-01 | 安普林荷兰有限公司 | Amplifier device and electronic equipment including same |
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| CN114915266B (en) * | 2022-05-11 | 2023-08-11 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency amplifying circuit and radio frequency front-end module |
| WO2023216847A1 (en) * | 2022-05-11 | 2023-11-16 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency amplification circuit and radio frequency front-end module |
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Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |
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