CN114188824A - 780nm semiconductor laser with tunable wavelength - Google Patents
780nm semiconductor laser with tunable wavelength Download PDFInfo
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- CN114188824A CN114188824A CN202111556193.5A CN202111556193A CN114188824A CN 114188824 A CN114188824 A CN 114188824A CN 202111556193 A CN202111556193 A CN 202111556193A CN 114188824 A CN114188824 A CN 114188824A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims abstract description 18
- 238000001228 spectrum Methods 0.000 claims abstract description 12
- 230000006835 compression Effects 0.000 claims description 13
- 238000007906 compression Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000960 laser cooling Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4075—Beam steering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application is suitable for semiconductor laser technical field, provides a wavelength tunable 780nm semiconductor laser, and this laser includes: the device comprises a light beam transmission system, a volume Bragg grating, a temperature sensor and a heating unit; the light beam transmission system is used for compressing the fast axis emission angle of the incident light beam and rotating the fast axis and the slow axis of the incident light beam by 90 degrees; the volume Bragg grating is used for narrowing the spectrum of the light beam emitted by the light beam transmission system and locking the wavelength of the light beam; the temperature sensor is used for acquiring the real-time temperature of the volume Bragg grating; the heating unit is used for adjusting the temperature of the volume Bragg grating. The application provides a 780nm semiconductor laser which is simple in structure, wavelength-locked and tunable.
Description
Technical Field
The application belongs to the technical field of semiconductor lasers, and particularly relates to a 780nm semiconductor laser with a tunable wavelength.
Background
Laser with 780nm wavelength is widely applied to the fields of atomic physics, spectroscopy, atmospheric sensing, laser radar detection and the like. 780nm laser corresponding to D of alkali metal rubidium atom2The absorption line has irreplaceable effects in the fields of quantum information storage, laser cooling, quantum frequency standard, quantum entangled-state light source manufacturing and the like, and along with the rapid development of quantum communication technology, higher requirements on the performance of 780nm lasers are provided in the scientific community.
The commonly used 780nm semiconductor laser at present has a complex structure and strict requirements on conditions such as temperature, angle and the like, and is not suitable for large-scale application; or the structure is simple, but the emitted spectrum of the laser is wide, and the wavelength can seriously drift along with the change of the external temperature. Therefore, a wavelength-stable tunable 780nm semiconductor laser with high environmental adaptability and simple structure is needed.
Disclosure of Invention
In order to overcome the problems in the related art, the embodiment of the application provides a 780nm semiconductor laser with a tunable wavelength, and the 780nm laser with the tunable wavelength, which has a simple structure, good beam quality and can be locked and tuned, can be provided.
The application is realized by the following technical scheme:
in a first aspect, an embodiment of the present application provides a wavelength tunable 780nm semiconductor laser, including: the device comprises a light beam transmission system, a volume Bragg grating, a temperature sensor and a heating unit;
the light beam transmission system is used for compressing the fast axis emission angle of the incident light beam and rotating the fast axis and the slow axis of the incident light beam by 90 degrees;
the volume Bragg grating is used for narrowing the spectrum of the light beam emitted by the light beam transmission system and locking the wavelength of the light beam;
the temperature sensor is used for acquiring the real-time temperature of the volume Bragg grating;
the heating unit is used for adjusting the temperature of the whole Bragg grating.
In one possible implementation manner of the first aspect, the optical beam transmission system includes: a fast axis compression lens and a turning prism;
the surface of the fast axis compression mirror is an aspheric surface and is used for compressing the fast axis emission angle of the light beam to a preset angle and collimating the light beam;
the turning prism is used for rotating the light spot generated by the emergence of the fast axis compression mirror by 90 degrees to obtain a round far field light spot.
In one possible implementation manner of the first aspect, the semiconductor laser further includes a semiconductor laser array and a collimating lens group;
the semiconductor laser array is used for generating a plurality of continuous light beams with the wavelength of 780nm, and the collimating lens group is used for focusing and shaping the light beams with the wavelength of 780nm emitted by the volume Bragg grating and then outputting the light beams.
In one possible implementation form of the first aspect, the light beam transmission system, the volume bragg grating and the collimating lens group are coated with a 780nm high-transmittance film.
In a possible implementation manner of the first aspect, the semiconductor laser array includes a plurality of Bar bars, the number of the volume bragg gratings is multiple, and the plurality of Bar bars and the plurality of volume bragg gratings correspond to each other in number.
In one possible implementation of the first aspect, the heating unit is a resistive heater.
In one possible implementation manner of the first aspect, the resistive heater is mounted on the volume bragg grating, and the process of adjusting the temperature of the volume bragg grating by the resistive heater includes:
the resistance-type heater receives the real-time temperature of the temperature sensor, and the current of the heating resistor in the resistance-type heater is adjusted according to the real-time temperature and the preset temperature threshold value, so that the temperature of the resistance-type heater is adjusted.
In a possible implementation manner of the first aspect, the resistive heater adopts a temperature feedback algorithm, and the current of the heating resistor is adjusted according to the real-time temperature.
In a possible implementation manner of the first aspect, the volume bragg gratings, the temperature sensors and the heating units are all multiple, and the volume bragg gratings, the temperature sensors and the heating units are the same in number;
the resistance heater adopts a temperature feedback algorithm, and the current of the heating resistor is adjusted according to the real-time temperature of the corresponding volume Bragg grating, so that the real-time temperature of each volume Bragg grating is consistent.
In a second aspect, an embodiment of the present application provides an optical system, including: the first aspect provides a 780nm wavelength tunable semiconductor laser.
Compared with the prior art, the embodiment of the application has the advantages that:
the application discloses 780nm semiconductor laser specifically is: the semiconductor laser array emits light beams, a circular far-field light spot is obtained through optimization of a light beam transmission system, the wavelength is locked through the volume Bragg grating narrow spectrum, and finally the temperature of the volume Bragg grating is accurately controlled by using the temperature sensor and the heating unit, so that the wavelength can be tuned.
The application provides a 780nm semiconductor laser which is simple in structure, wavelength-locked and tunable.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the specification.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic diagram of a wavelength-locked tunable 780nm semiconductor laser for optimizing beam quality according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a beam delivery system according to an embodiment of the present application;
fig. 3 is a schematic diagram of spot transformation of a turning prism according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram illustrating the temperature control of the volume bragg grating according to an embodiment of the present disclosure.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It should also be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.
As used in this specification and the appended claims, the term "if" may be interpreted contextually as "when", "upon" or "in response to" determining "or" in response to detecting ". Similarly, the phrase "if it is determined" or "if a [ described condition or event ] is detected" may be interpreted contextually to mean "upon determining" or "in response to determining" or "upon detecting [ described condition or event ]" or "in response to detecting [ described condition or event ]".
Furthermore, in the description of the present application and the appended claims, the terms "first," "second," "third," and the like are used for distinguishing between descriptions and not necessarily for describing or implying relative importance.
Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.
In the prior art, the commonly used ways of generating 780nm laser mainly include two ways, one is to perform frequency doubling by using easily available laser in 1560nm band as fundamental frequency light, but this method needs to perform nonlinear frequency conversion, which results in a complex laser structure, and the nonlinear frequency conversion needs to consider phase matching, has strict requirements on conditions such as temperature and angle, and is not suitable for large-scale application; the second is a mode of directly generating 780nm laser by adopting a GaAs semiconductor laser, the laser has a simple structure and low price, but the quality of the emitted light beam is poor, the spectrum is wide, the wavelength can generate serious drift along with the change of the external temperature, and the precision requirements of the atomic physics and the quantum communication field on the spectrum width, the wavelength stability and the light beam quality are difficult to adapt.
Based on the above problems, the present application provides a 780nm semiconductor laser that has a simple structure, is wavelength-locked, and is tunable. Fig. 1 is a schematic diagram of a wavelength-locked tunable 780nm semiconductor laser for optimizing beam quality according to an embodiment of the present application. In this scenario, the method includes:
semiconductor laser array 100, beam delivery system 200, volume bragg grating 300, temperature sensor and heating unit 400, and collimating lens group 500.
In some embodiments, the semiconductor laser array 100 emits 780nm light beams, which are optimized by the light beam transmission system 200 to obtain a circular far-field light spot, and then the light beam is narrowed by the volume bragg grating 300 to lock the wavelength, and then the temperature sensor and the heating unit 400 are used to accurately control the temperature of the volume bragg grating to realize the wavelength tuning, and finally the light beam is focused and shaped by the collimating lens assembly 500 to be output.
This 780nm semiconductor laser will be described with reference to fig. 1.
The semiconductor laser array 100 can provide continuous laser light having a wavelength of 780 nm. However, due to the extreme asymmetry of the fast axis and slow axis luminescence and the multi-point luminescence characteristic of the semiconductor laser, the emitted light beam is a group of elliptical light spots, and the emission angle is large.
Alternatively, the semiconductor laser may be constituted by a plurality of stacked arrays.
Alternatively, the semiconductor laser may be composed of a plurality of Bar bars that emit light, but the light beam emitted by each Bar may have a significantly broadened spectrum due to the non-uniformity of the center wavelength.
In summary, the light beam emitted by the semiconductor laser array 100 has a wide spectrum and a large emission angle, and the wavelength changes under the influence of temperature, resulting in poor beam quality. Therefore, the semiconductor laser array is not suitable for scenes with strict requirements on 780nm, and can only be used as an input light source of the 780nm semiconductor laser in the application.
The light beam transmission system 200 is used for compressing the fast axis emission angle of the light beam emitted by the semiconductor laser array 100 and rotating the fast axis and the slow axis of the light beam by 90 degrees, so that the asymmetric remote emission light is shaped into an approximately circular light spot. As shown in the schematic diagram of the optical beam delivery system of fig. 2, with reference to fig. 2:
in some embodiments, the beam delivery system 200 includes a fast axis compression mirror 201 and a turning prism 202.
The fast axis compression mirror is used for compressing the fast axis emission angle of the semiconductor laser array emergent light beam to a preset angle and collimating the light beam.
For example, if the preset angle is set to 1 °. The fast axis compression mirror compresses the fast axis divergence angle of the light beam from the original 35 degrees to 1 degree, and the divergence characteristic of the light beam is improved after the light beam passes through the fast axis compression mirror.
Optionally, the fast axis compression mirror surface is aspheric.
The turning prism 202 is used for rotating the fast axis and the slow axis of the light spot generated by the emergence of the fast axis compression mirror by 90 degrees to obtain a nearly circular far field light spot. I.e. the x and y directions are interchanged, as shown in the schematic diagram of spot transformation of the turning prism shown in fig. 3.
In conclusion, the light beam transmission system realizes the cutting and rearrangement of the fast-axis collimation and the slow-axis light field through the fast-axis compression mirror and the turning prism, and the asymmetric far-field emission is smoothed into nearly circular light spots, so that the light beam quality is optimized.
Optionally, the surface of the light beam transmission system is coated with a 780nm high-transmittance film.
The volume bragg grating 300 is used to restrict laser oscillation that does not satisfy the bragg diffraction condition, narrow the spectrum of the light beam emitted by the light beam transmission system, and lock the wavelength of the light beam.
In some embodiments, the number of the volume bragg gratings corresponds to the number of the light emitting bars of the semiconductor laser one to one, so that wavelength selective feedback is provided for the laser resonant cavity, and only the light beam with the wavelength satisfying the bragg diffraction condition can be fed back and amplified, so that only the effective gain of the preset spectral range is increased, and the light beam outside the spectral range is transmitted and cannot be oscillated, so that the spectrum and the stable wavelength of the preset condition are obtained.
Optionally, the predetermined spectral range of the volume bragg grating may be limited to 780 ± 0.1 nm.
Optionally, the temperature coefficient of the volume bragg light is measured at 0.3 pm/deg.c.
Optionally, the surface of the volume bragg grating is plated with a 780nm high-transmittance film.
In summary, the volume bragg grating only emits the light beam in accordance with the preset spectral range, and the wavelength of the emitted light beam is locked to 780 ± 0.1 nm.
The temperature sensor and heating unit 400 is disposed on the volume bragg grating and is configured to acquire a real-time temperature of the volume bragg grating and adjust the temperature of the volume bragg grating in real time.
In some embodiments, fig. 4 is a schematic diagram of a principle of temperature control of a volume bragg grating according to an embodiment of the present application, and fig. 4:
according to the second law of thermodynamics, the heat gradually decreases with the spatial expansion without external intervention, so that the existence of the temperature gradient makes the real-time temperature of each volume bragg grating inconsistent. The volume Bragg grating is obviously influenced by temperature, and when the temperature of the volume Bragg grating changes, the wavelength of the emergent light beam also changes, so that spectrum expansion is caused.
In step 401, a temperature sensor obtains a real-time temperature of each volume bragg grating.
Illustratively, the number of the temperature sensors and the heating units is the same as the number of the volume bragg gratings. The temperature sensor is used for acquiring the real-time temperature of each volume Bragg grating.
In step 402, the heating unit adjusts the temperature of each volume bragg grating.
Illustratively, the heating unit receives the real-time temperature obtained in step 401, and adjusts the temperature of the heating unit according to the real-time temperature and a preset temperature threshold, so as to achieve the purpose of adjusting the temperature of the volume bragg grating.
Optionally, the heating unit is a resistive heater. The current passing through the heating resistor in the resistive heater can be adjusted, and the temperature of the resistive heater can be adjusted.
Optionally, a temperature feedback algorithm may be used to adjust the current through the heating resistor based on the real-time temperature.
In step 403, if the temperatures of the volume bragg gratings are consistent, the limited wavelengths are consistent, and the outgoing wavelength is locked.
Through step 402, the temperature of the volume Bragg grating is accurately controlled, the temperature of each volume Bragg grating is consistent, and the purpose of locking the wavelength to 780 +/-1 nm is achieved.
Optionally, a preset temperature threshold of the heating unit may be adjusted, the limiting wavelength of the light spot passing through the volume bragg grating is changed, and the wavelength is tunable.
In conclusion, the temperature sensor and the heating unit acquire the real-time temperature of the volume Bragg grating through the temperature sensor, and adjust the temperature of the volume Bragg grating through the heating unit, so that the purpose of locking the emergent wavelength and tuning the wavelength is achieved.
And the collimating lens group 500 is used for focusing and shaping the light beam with the wavelength of 780nm emitted by the volume Bragg grating and then outputting the light beam.
Illustratively, the number of output beams is the same as the number of Bar bars in the semiconductor laser array.
Optionally, the surface of the collimating lens group is plated with a 780nm high-transmittance film.
The application also provides an optical system which comprises all or part of the structure of the wavelength-tunable 780nm semiconductor laser.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (10)
1. A wavelength tunable 780nm semiconductor laser, comprising: the device comprises a light beam transmission system, a volume Bragg grating, a temperature sensor and a heating unit;
the light beam transmission system is used for compressing the fast axis emission angle of the incident light beam and rotating the fast axis and the slow axis of the incident light beam by 90 degrees;
the volume Bragg grating is used for narrowing the spectrum of the light beam emitted by the light beam transmission system and locking the wavelength of the light beam;
the temperature sensor is used for acquiring the real-time temperature of the volume Bragg grating;
the heating unit is used for adjusting the temperature of the volume Bragg grating.
2. The wavelength tunable 780nm semiconductor laser of claim 1, wherein said optical beam delivery system comprises: a fast axis compression lens and a turning prism;
the surface of the fast axis compression mirror is an aspheric surface and is used for compressing the fast axis emission angle of the light beam to a preset angle and collimating the light beam;
the turning prism is used for rotating the light spot generated by the emergence of the fast axis compression mirror by 90 degrees to obtain a round far field light spot.
3. The wavelength tunable 780nm semiconductor laser of claim 1, wherein said semiconductor laser further comprises a semiconductor laser array and a collimating lens group;
the semiconductor laser array is used for generating a plurality of continuous light beams with the wavelength of 780nm, and the collimating lens group is used for focusing and shaping the light beams with the wavelength of 780nm emitted by the volume Bragg grating and then outputting the light beams.
4. The wavelength tunable semiconductor laser of claim 3, wherein said beam delivery system, said volume bragg grating, and said collimating lens group are each coated with a 780nm high transmission film.
5. The wavelength tunable 780nm semiconductor laser of claim 3, wherein the semiconductor laser array comprises a plurality of Bar strips, the number of the volume Bragg gratings is multiple, and the number of the Bar strips and the number of the volume Bragg gratings are in one-to-one correspondence.
6. The wavelength tunable 780nm semiconductor laser of claim 1, wherein said heating element is a resistive heater.
7. The wavelength tunable 780nm semiconductor laser of claim 1, wherein said resistive heater is mounted on said volume bragg grating, said resistive heater adjusting a temperature of said volume bragg grating comprising:
the resistance heater receives the real-time temperature of the temperature sensor, and the current of a heating resistor in the resistance heater is adjusted according to the real-time temperature and a preset temperature threshold value, so that the temperature of the resistance heater is adjusted.
8. The wavelength tunable 780nm semiconductor laser of claim 7, wherein said resistive heater employs a temperature feedback algorithm to adjust the current of the heating resistor based on said real-time temperature.
9. The wavelength tunable 780nm semiconductor laser of claim 7, wherein said volume bragg grating, said temperature sensor and said heating unit are all plural, and the number of said volume bragg grating, said temperature sensor and said heating unit is the same;
the resistance heater adopts a temperature feedback algorithm, and the current of the heating resistor is adjusted according to the real-time temperature of the corresponding volume Bragg grating, so that the real-time temperature of each volume Bragg grating is consistent.
10. An optical system comprising a wavelength tunable 780nm semiconductor laser according to any one of claims 1 to 9.
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| CN202111556193.5A CN114188824A (en) | 2021-12-17 | 2021-12-17 | 780nm semiconductor laser with tunable wavelength |
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| CN202111556193.5A CN114188824A (en) | 2021-12-17 | 2021-12-17 | 780nm semiconductor laser with tunable wavelength |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790067A (en) * | 2016-05-27 | 2016-07-20 | 昆山华辰光电科技有限公司 | Wavelength-locked semiconductor laser |
| CN112034651A (en) * | 2020-09-11 | 2020-12-04 | 北京熔煜科技发展有限公司 | Multi-primary color laser array side-entering type uniform light area light source of liquid crystal display |
| CN214478427U (en) * | 2021-04-28 | 2021-10-22 | 武汉锐科光纤激光技术股份有限公司 | Semiconductor laser |
| CN113644544A (en) * | 2021-08-11 | 2021-11-12 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking semiconductor laser system |
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2021
- 2021-12-17 CN CN202111556193.5A patent/CN114188824A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790067A (en) * | 2016-05-27 | 2016-07-20 | 昆山华辰光电科技有限公司 | Wavelength-locked semiconductor laser |
| CN112034651A (en) * | 2020-09-11 | 2020-12-04 | 北京熔煜科技发展有限公司 | Multi-primary color laser array side-entering type uniform light area light source of liquid crystal display |
| CN214478427U (en) * | 2021-04-28 | 2021-10-22 | 武汉锐科光纤激光技术股份有限公司 | Semiconductor laser |
| CN113644544A (en) * | 2021-08-11 | 2021-11-12 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking semiconductor laser system |
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