CN114188815B - Lens-free focusing device and method of coherent array laser - Google Patents

Lens-free focusing device and method of coherent array laser Download PDF

Info

Publication number
CN114188815B
CN114188815B CN202111498665.6A CN202111498665A CN114188815B CN 114188815 B CN114188815 B CN 114188815B CN 202111498665 A CN202111498665 A CN 202111498665A CN 114188815 B CN114188815 B CN 114188815B
Authority
CN
China
Prior art keywords
optical microstructure
binary optical
laser
substrate
array laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111498665.6A
Other languages
Chinese (zh)
Other versions
CN114188815A (en
Inventor
王智勇
代京京
兰天
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Jingjing
Lan Tian
Wang Zhiyong
Beijing University of Technology
Original Assignee
Beijing University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Technology filed Critical Beijing University of Technology
Priority to CN202111498665.6A priority Critical patent/CN114188815B/en
Publication of CN114188815A publication Critical patent/CN114188815A/en
Application granted granted Critical
Publication of CN114188815B publication Critical patent/CN114188815B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a lens-free focusing device and method of a coherent array laser, comprising the following steps: the optical microstructure comprises a coherent array laser, a binary optical microstructure substrate and a binary optical microstructure; the binary optical microstructure is arranged on the output end of the coherent array laser through a binary optical microstructure substrate, the structural micro-element of the binary optical microstructure, the structural micro-element substrate of the binary optical microstructure substrate and the laser unit of the coherent array laser are vertically corresponding to each other, and a focused light beam is obtained after the phase modulation structure array. The invention utilizes the binary optical microstructure to enable the array beam to generate phase delay, thereby realizing the lens-free focusing effect; meanwhile, the binary optical microstructure is prepared on a chip by adopting a semiconductor process technology, so that the limitations of complex manufacturing process, large size and heavy weight of the traditional lens and errors caused by externally overlapped light paths are eliminated; the structure is simple, the preparation process is simple and cheap, and the realization is convenient.

Description

Lens-free focusing device and method of coherent array laser
Technical Field
The invention relates to the technical field of semiconductor laser chips, in particular to a lens-free focusing device and method of a coherent array laser.
Background
With the development of laser technology, high power and high beam quality lasers have become the pursuit of modern laser applications. However, the single aperture laser is affected by the gain saturation effect, the hole burning effect, the thermal effect and other factors, and thus cannot meet the requirement for a high-power laser. Therefore, the coherent combining array laser is one of the leading edge and hot spot of the current high-power laser technology research.
The focusing and changing of the laser beam is an effective means for controlling the laser energy distribution, which is essential in the fields of laser welding, laser marking, laser surgery, laser weapons, and the like. When the traditional lens is used for focusing, errors are easily generated when a light path is built, and the complexity is high; when the large array laser is focused, high-energy laser is radiated to the mirror surface, and the lens is subjected to thermal distortion and even breakage due to thermal stress generated on the lens; meanwhile, the lens has the defects of large size, heavy weight and complex processing.
In order to make up for the defects of the traditional lens, an on-chip integration process is adopted, the binary optical microstructure is used for replacing the traditional lens to generate a focusing effect, the structure is simple, the preparation process is simple, and the implementation is convenient.
Disclosure of Invention
In view of the above problems in the prior art, the present invention provides a lens-free focusing apparatus and method for a coherent array laser.
The invention discloses a lens-free focusing device of a coherent array laser, which comprises: the optical microstructure comprises a coherent array laser, a binary optical microstructure substrate and a binary optical microstructure;
the binary optical microstructure is arranged on the output end of the coherent array laser through the binary optical microstructure substrate, and the structural microelements of the binary optical microstructure, the structural microelement substrate of the binary optical microstructure substrate and the laser unit of the coherent array laser are vertically corresponding to each other;
the binary optical microstructure modulates the phase of the output beam of each laser unit to meet the phase transformation relation of the thin focusing lens; wherein the content of the first and second substances,
when the coherent array laser is a two-dimensional surface emission coherent array laser, the phase modulation function generated by the binary optical microstructure satisfies the relation:
Figure BDA0003401888130000021
when the coherent array laser is a one-dimensional surface emission coherent array laser, the phase modulation function generated by the binary optical microstructure satisfies the relation:
Figure BDA0003401888130000022
the thickness d of the structural micro-element of the binary optical microstructure satisfies the relational expression:
Figure BDA0003401888130000023
in the formula, i is an imaginary number unit, lambda is laser wavelength, f is equivalent focal length, the center of the laser array is taken as a coordinate origin, and x m 、y n The horizontal and vertical coordinates of the light-emitting unit in the mth column and the nth row respectively; n is 1 And n 2 Respectively the refractive index of the structure infinitesimal substrate and the refractive index of the structure infinitesimal;
Figure BDA0003401888130000024
for phase change, if
Figure BDA0003401888130000025
Then the integer multiple of 2 pi is removed.
As a further improvement of the invention, the binary optical microstructure generates a phase modulation effect on the laser beam of each laser unit of the coherent array laser.
As a further improvement of the invention, the structural microelements are all sub-wavelength thick.
As a further improvement of the invention, the binary optical microstructure is prepared by depositing an optical material with a dissimilar refractive index on the binary optical microstructure substrate after etching.
As a further improvement of the present invention, the refractive index of the structural infinitesimal is greater than the refractive index of the structural infinitesimal substrate material.
As a further improvement of the invention, the binary optical microstructure substrate is SiO 2 A substrate, the binary optical microstructure being Si 3 N 4 And (3) a layer.
The invention also discloses a preparation method of the lens-free focusing device of the coherent array laser, which comprises the following steps:
depositing a binary optical microstructure substrate on the output end of the coherent array laser;
calculating the thickness of each structural element in the binary optical microstructure, and etching the binary optical microstructure substrate based on the thickness of each structural element to form a step shape;
filling the etching grooves of the binary optical microstructure substrate to form a binary optical microstructure;
the coherent array laser beam finally obtains focused two-dimensional coherent laser output through the binary optical microstructure.
Compared with the prior art, the invention has the beneficial effects that:
the invention utilizes the binary optical microstructure to enable the array beam to generate phase delay, thereby realizing the lens-free focusing effect; meanwhile, the binary optical microstructure is prepared on a chip by adopting a semiconductor process technology, so that the limitations of complex manufacturing process, large size and heavy weight of the traditional lens and errors caused by externally overlapped light paths are eliminated; the structure is simple, the preparation process is simple and cheap, and the realization is convenient.
Drawings
FIG. 1 is a schematic structural diagram of a lensless focusing apparatus for a coherent array laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a light-emitting surface structure of a square surface-emitting coherent array laser according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a light-emitting surface structure of a one-dimensional surface-emitting coherent array laser according to an embodiment of the present invention;
fig. 4 is a schematic flow chart illustrating a process for manufacturing an 8-step binary optical microstructure according to an embodiment of the present invention.
In the figure:
1. a coherent array laser; 2-1, a binary optical microstructure substrate; 2-2, a binary optical microstructure; 3. a surface-emitting light source; 4. a side-emitting light source; 5. photoetching a mask layer; 6. SiO 2 2 A layer; 7. si 3 N 4 And (3) a layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the present invention provides a lens-free focusing device of a coherent array laser, comprising: the optical fiber laser comprises a coherent array laser 1, a binary optical microstructure substrate 2-1 and a binary optical microstructure 2-2, wherein the coherent array laser 1 is a laser formed by coherent synthesis of laser units arranged in a one-dimensional or two-dimensional array, the binary optical microstructure substrate 2-1 is a step-shaped structure which is formed by a plurality of structural infinitesimal substrates and has a high center and a low edge, and the binary optical microstructure 2-2 is a step-shaped structure which is formed by a plurality of structural infinitesimal substrates and is complementary with the binary optical microstructure substrate 2-1 and has a low center and a high edge; wherein the content of the first and second substances,
the binary optical microstructure 2-2 is arranged on the output end of the coherent array laser 1 through a binary optical microstructure substrate 2-1, and the structural microelements of the binary optical microstructure 2-2, the structural microelement substrate of the binary optical microstructure substrate 2-1 and the laser unit of the coherent array laser 1 are vertically corresponding;
the binary optical microstructure modulates the phase of the output beam of each laser unit to meet the phase transformation relation of the thin focusing lens; wherein the content of the first and second substances,
when the coherent array laser is a two-dimensional surface emitting coherent array laser as shown in fig. 2, the phase modulation function generated by the binary optical microstructure satisfies the relation:
Figure BDA0003401888130000041
the thickness d of the structural micro-element of the binary optical microstructure, the structural micro-element coordinate arranged in a two-dimensional array, the equivalent focal length, the structural micro-element refractive index, the structural micro-element substrate material refractive index and the laser wavelength satisfy the following relational expression:
Figure BDA0003401888130000042
when the coherent array laser is a one-dimensional surface emitting coherent array laser as shown in fig. 3, the phase modulation function generated by the binary optical microstructure satisfies the relation:
Figure BDA0003401888130000043
the thickness d of the structural micro-element of the binary optical microstructure, the structural micro-element coordinate arranged in a two-dimensional array, the equivalent focal length, the structural micro-element refractive index, the structural micro-element substrate material refractive index and the laser wavelength satisfy the following relational expression:
Figure BDA0003401888130000044
in the formula, i is an imaginary number unit, lambda is laser wavelength, f is equivalent focal length, the center of the laser array is taken as a coordinate origin, and x m 、y n The horizontal and vertical coordinates of the light-emitting unit in the mth column and the nth row respectively; n is 1 And n 2 Respectively the refractive index of the structure infinitesimal substrate and the refractive index of the structure infinitesimal;
Figure BDA0003401888130000045
for phase change, if
Figure BDA0003401888130000046
Then the integer multiple of 2 pi is removed.
Further, the binary optical microstructure 2-2 generates a phase modulation effect on the laser beam of each laser unit of the coherent array laser 1.
Further, the structural microelements are all sub-wavelength thick.
Further, the binary optical microstructure is prepared by depositing optical materials with different refractive indexes after etching on a binary optical microstructure substrate, and the refractive index of the structural infinitesimal is greater than that of the structural infinitesimal substrate material; preferably, the binary optical microstructure substrate is SiO 2 A substrate with a binary optical microstructure of Si 3 N 4 And (3) a layer.
As shown in fig. 4, the present invention provides a method for manufacturing a lensless focusing device of a coherent array laser, comprising:
depositing a binary optical microstructure substrate 2-1 on the output end of a coherent array laser 1;
calculating the thickness of each structural element in the binary optical microstructure 2-2, and etching the binary optical microstructure substrate 2-1 based on the thickness of each structural element to form a step shape;
filling an etched groove of the binary optical microstructure substrate 2-1 to form a binary optical microstructure 2-2;
the binary optical microstructure 2-2 performs phase modulation on the in-phase coherent array light beam output by the coherent array laser, the phase distribution of the array light beam passing through the binary optical microstructure meets the phase transformation relation of a discrete thin focusing lens, and finally the coherent array laser can obtain the laser output without lens focusing.
Example 1:
the invention discloses a method and a device for lens-free focusing of a coherent array laser, wherein the coherent array laser is a two-dimensional array laser which emits laser from the surface of a semiconductor chip substrate. The surface-emitting laser array of the present embodiment is formed by a regular quadrangular arrangement of surface-emitting light-emitting units as shown in fig. 2. After the binary optical microstructure is arranged at the output end of the coherent array laser, each sub-beam of the array beam is respectively subjected to phase modulation, and a phase delay function generated by each sub-beam meets the relation as follows:
Figure BDA0003401888130000051
the thickness d of the structural micro-element, the coordinate of the structural micro-element arranged in a two-dimensional array, the equivalent focal length, the refractive index of the structural micro-element substrate material and the laser wavelength satisfy the following relational expression:
Figure BDA0003401888130000052
wherein i is an imaginary unit; λ is the laser wavelength; f is the equivalent focal length; using the center of the laser array as the origin of coordinates, x m 、y n The horizontal and vertical coordinates of the light-emitting unit in the mth column and the nth row respectively; n is 1 And n 2 Respectively the refractive index of the structure infinitesimal substrate and the refractive index of the structure infinitesimal;
Figure BDA0003401888130000053
to delay the phaseA delay, if
Figure BDA0003401888130000054
Then the integer multiple of 2 pi is removed.
In this embodiment, the equivalent focal length is 10mm, the coherent array laser wavelength is 980nm, the period of the coherent array laser unit is 50 μm, the arrangement mode is 7 × 7, and the number of structural micro-elements with different thicknesses d is 9 through calculation according to the above formula. 3 photoetching masks are developed by adopting a binary optical technology to prepare an 8-step phase modulation microstructure.
Specifically, the preparation method of the binary optical microstructure comprises the following steps:
SiO with the thickness of 1.42 mu m is deposited at the output end of the coherent array laser by adopting PECVD technology 2 Layer of SiO 2 Coating photoetching mask layer 5 on the surface of layer 6, covering the mask layer 5 with mask plate, exposing and processing the mask layer, as shown in FIG. 4, etching step with height of 680nm by RIE process, repeating photoetching for 3 times on 3 mask plates, etching SiO after the second photoetching 2 The step height is 340 nm; etching SiO after the third photoetching 2 The step height is 170nm, and after the photoresist is removed, Si is filled in the etched groove by adopting a PECVD (plasma enhanced chemical vapor deposition) technology 3 N 4 Polishing the layer 7 to finally prepare a binary optical microstructure; the coherent array laser beam finally obtains focused two-dimensional coherent laser output through the binary optical microstructure.
Example 2:
the invention discloses a method and a device for lens-free focusing of a coherent array laser, wherein the coherent array laser is a one-dimensional array laser which emits laser from the edge of an active area of a semiconductor chip. The edge-emitting laser array of the present embodiment is formed by one-dimensional linear arrangement of edge-emitting light-emitting units as shown in fig. 3. After the binary optical microstructure is arranged at the output end of the coherent array laser, each sub-beam of the array beam is respectively subjected to phase modulation, and a phase delay function generated by each sub-beam meets the relation as follows:
Figure BDA0003401888130000061
the thickness d of the structural micro-element, the coordinate of the structural micro-element arranged in a two-dimensional array, the equivalent focal length, the refractive index of the structural micro-element substrate material and the laser wavelength satisfy the following relational expression:
Figure BDA0003401888130000062
wherein i is an imaginary unit; λ is the laser wavelength; f is the equivalent focal length; using the center of the laser array as the origin of coordinates, x m 、y n The horizontal and vertical coordinates of the light-emitting unit in the mth column and the nth row respectively; n is 1 And n 2 Respectively the refractive index of the structure infinitesimal substrate and the refractive index of the structure infinitesimal;
Figure BDA0003401888130000063
is a phase delay, if
Figure BDA0003401888130000064
Then the integer multiple of 2 pi is removed.
In the embodiment, the equivalent focal length is 10mm, the coherent array laser wavelength is 850nm, the period of the coherent array laser unit is 50 μm, the coherent array laser unit is in a 1 × 15 array arrangement mode, and the number of structural micro-elements with different thicknesses d is 8 through calculation of the formula. 3 photoetching masks are developed by adopting a binary optical technology to prepare an 8-step phase modulation microstructure. Specifically, the preparation method of the binary optical microstructure comprises the following steps:
SiO with the thickness of 1.23 mu m is deposited at the output end of the coherent array laser by adopting the PECVD technology 2 Layer of SiO 2 Coating photoetching mask layer 5 on the surface of layer 6, covering the mask layer 5 with mask plate, exposing and processing the mask layer, as shown in FIG. 4, etching step with height of 600nm by RIE process, repeating photoetching for 3 times on 3 mask plates, etching SiO after the second photoetching 2 The step height is 300 nm; etching SiO after the third photoetching 2 The step height is 150nm, after the photoresist is removed, Si is filled in the etched groove by adopting a PECVD (plasma enhanced chemical vapor deposition) technology 3 N 4 Polishing the layer 7 to finally prepare a binary optical microstructure; coherent array laserThe light beam finally obtains focused two-dimensional coherent laser output through the binary optical microstructure.
The invention has the advantages that:
the invention utilizes the binary optical microstructure to enable the array beam to generate phase delay, thereby realizing the lens-free focusing effect; meanwhile, the binary optical microstructure is prepared on a chip by adopting a semiconductor process technology, so that the limitations of complex manufacturing process, large size and heavy weight of the traditional lens and errors caused by externally overlapped light paths are eliminated; the structure is simple, the preparation process is simple and cheap, and the realization is convenient.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (7)

1. A lensless focusing apparatus for a coherent array laser, comprising: the optical microstructure comprises a coherent array laser, a binary optical microstructure substrate and a binary optical microstructure;
the binary optical microstructure is arranged on the output end of the coherent array laser through the binary optical microstructure substrate, the binary optical microstructure substrate is a step-shaped structure which is formed by a plurality of structural infinitesimal substrates and has high center and low edge, and the binary optical microstructure is a step-shaped structure which is formed by a plurality of structural infinitesimal substrates and has low center and high edge and is complementary with the binary optical microstructure substrate; the structure micro element of the binary optical microstructure, the structure micro element substrate of the binary optical microstructure substrate and the laser unit of the coherent array laser are vertically corresponding;
the binary optical microstructure modulates the phase of the output beam of each laser unit to meet the phase transformation relation of the thin focusing lens; wherein the content of the first and second substances,
when the coherent array laser is a two-dimensional surface emission coherent array laser, the phase modulation function generated by the binary optical microstructure satisfies the relation:
Figure FDA0003710949800000011
when the coherent array laser is a one-dimensional surface emission coherent array laser, the phase modulation function generated by the binary optical microstructure satisfies the relation:
Figure FDA0003710949800000012
the thickness d of the structural micro-element of the binary optical microstructure satisfies the relational expression:
Figure FDA0003710949800000013
in the formula, i is an imaginary number unit, lambda is laser wavelength, f is equivalent focal length, the center of the laser array is taken as a coordinate origin, and x m 、y n The horizontal and vertical coordinates of the light-emitting unit in the mth column and the nth row respectively; n is 1 And n 2 Respectively the refractive index of the structure infinitesimal substrate and the refractive index of the structure infinitesimal;
Figure FDA0003710949800000014
for phase change, if
Figure FDA0003710949800000015
Then the integer multiple of 2 pi is removed.
2. The lens-free focusing apparatus of claim 1, wherein the binary optical microstructure phase modulates the laser beam of each laser unit of the coherent array laser.
3. The lens-free focusing arrangement of a coherent array laser of claim 1, wherein the structural microelements are all sub-wavelength thick.
4. The lens-free focusing apparatus of a coherent array laser as claimed in claim 1, wherein the binary optical microstructure is prepared by depositing optical material with different refractive index on the binary optical microstructure substrate after etching.
5. The lens-free focusing arrangement of a coherent array laser as claimed in claim 1, wherein the refractive index of the structural infinitesimal is greater than the refractive index of the structural infinitesimal base material.
6. The lens-free focusing assembly of claim 5, wherein the binary optical microstructure substrate is SiO 2 A substrate, the binary optical microstructure being Si 3 N 4 And (3) a layer.
7. A method for preparing a lens-free focusing device of a coherent array laser as claimed in any one of claims 1 to 6, comprising:
depositing a binary optical microstructure substrate on the output end of the coherent array laser;
calculating the thickness of each structural element in the binary optical microstructure, and etching the binary optical microstructure substrate based on the thickness of each structural element to form a step shape;
filling the etching grooves of the binary optical microstructure substrate to form a binary optical microstructure;
the coherent array laser beam finally obtains focused two-dimensional coherent laser output through the binary optical microstructure.
CN202111498665.6A 2021-12-09 2021-12-09 Lens-free focusing device and method of coherent array laser Active CN114188815B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111498665.6A CN114188815B (en) 2021-12-09 2021-12-09 Lens-free focusing device and method of coherent array laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111498665.6A CN114188815B (en) 2021-12-09 2021-12-09 Lens-free focusing device and method of coherent array laser

Publications (2)

Publication Number Publication Date
CN114188815A CN114188815A (en) 2022-03-15
CN114188815B true CN114188815B (en) 2022-08-05

Family

ID=80604006

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111498665.6A Active CN114188815B (en) 2021-12-09 2021-12-09 Lens-free focusing device and method of coherent array laser

Country Status (1)

Country Link
CN (1) CN114188815B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103999304A (en) * 2012-01-18 2014-08-20 惠普发展公司,有限责任合伙企业 Integrated sub-wavelength grating element
CN108445555A (en) * 2018-05-09 2018-08-24 华南师范大学 Super surface lens
CN112117640A (en) * 2020-11-02 2020-12-22 北京工业大学 VCSEL (vertical cavity surface emitting laser) light splitting structure of substrate type diffractive optical element and preparation method
CN214957795U (en) * 2021-05-31 2021-11-30 华天慧创科技(西安)有限公司 VCSEL laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5494783A (en) * 1994-12-27 1996-02-27 Xerox Corporation Method of correcting non-uniform diffraction efficiency in a binary diffractive optical element
CN101231463A (en) * 2008-02-04 2008-07-30 哈尔滨工业大学 Method for making optical element base on ultraviolet stamping multiphase and continue relief structure
CN104297925B (en) * 2014-10-11 2016-07-13 北京工业大学 A kind of folding realizing femtosecond laser Diode laser spreads out the method for designing of hybrid element
JP2021089303A (en) * 2019-12-02 2021-06-10 キヤノン株式会社 Light source device and image projection device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103999304A (en) * 2012-01-18 2014-08-20 惠普发展公司,有限责任合伙企业 Integrated sub-wavelength grating element
CN108445555A (en) * 2018-05-09 2018-08-24 华南师范大学 Super surface lens
CN112117640A (en) * 2020-11-02 2020-12-22 北京工业大学 VCSEL (vertical cavity surface emitting laser) light splitting structure of substrate type diffractive optical element and preparation method
CN214957795U (en) * 2021-05-31 2021-11-30 华天慧创科技(西安)有限公司 VCSEL laser

Also Published As

Publication number Publication date
CN114188815A (en) 2022-03-15

Similar Documents

Publication Publication Date Title
US5212707A (en) Array of diffraction limited lasers and method of aligning same
JP5894529B2 (en) Laser device with brightness distribution that can be changed
US20200251882A1 (en) Vertical emitters with integral microlenses
JP2002026452A (en) Surface-emitting light source, method of manufacturing thereof, and light source for laser processing apparatus
CN109799611A (en) A kind of design method and its super structure lens of achromatism of the super structure lens of achromatism
US20180348451A1 (en) Laser module and laser processing apparatus
US20060086898A1 (en) Method and apparatus of making highly repetitive micro-pattern using laser writer
US20120140194A1 (en) Maskless Exposure Apparatus
CN109164518A (en) Super lens, preparation method and the optical module using it
WO2006022162A1 (en) Method for fabricating surface emission laser light source and surface emission laser light source
Fu et al. Semiconductor microlenses fabricated by one-step focused ion beam direct writing
JP2007003969A (en) Optical element
CN114188815B (en) Lens-free focusing device and method of coherent array laser
CN212276015U (en) Optical waveguide lens
JP2003202409A (en) Laser array and method of making the same
JP2001028456A (en) Semiconductor light emitting device
CN110646873A (en) Space optical laser reflector
JPH0637402A (en) Semiconductor-laser optical reflector element
JP2022075761A (en) Light emission device, light emission method, exposure device, exposure method, and device manufacturing method
TWI295383B (en) Lens, laser-arrangement and method for the production of a laser-arrangement
JP2001125040A (en) Laser irradiation optical system
CN108646429B (en) Structured light projector
KR20180060830A (en) Laser processing apparatus using spatial light modulator
JP2022160196A (en) Synthetic light generation device
CN103904537B (en) Laser instrument

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20230717

Address after: 100124 No. 100 Chaoyang District Ping Tian Park, Beijing

Patentee after: Beijing University of Technology

Patentee after: Wang Zhiyong

Patentee after: Dai Jingjing

Patentee after: Lan Tian

Address before: 100124 No. 100 Chaoyang District Ping Tian Park, Beijing

Patentee before: Beijing University of Technology