CN114184152B - Method for measuring thickness of accumulated material of seed crystal decomposition tank, storage medium and electronic equipment - Google Patents
Method for measuring thickness of accumulated material of seed crystal decomposition tank, storage medium and electronic equipment Download PDFInfo
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- CN114184152B CN114184152B CN202111467028.2A CN202111467028A CN114184152B CN 114184152 B CN114184152 B CN 114184152B CN 202111467028 A CN202111467028 A CN 202111467028A CN 114184152 B CN114184152 B CN 114184152B
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- 239000013078 crystal Substances 0.000 title claims abstract description 129
- 239000000463 material Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000003860 storage Methods 0.000 title claims abstract description 22
- 238000000354 decomposition reaction Methods 0.000 title claims description 7
- 238000009826 distribution Methods 0.000 claims abstract description 70
- 239000002002 slurry Substances 0.000 claims abstract description 51
- 238000009825 accumulation Methods 0.000 claims description 67
- 238000010586 diagram Methods 0.000 claims description 13
- 230000007613 environmental effect Effects 0.000 claims description 6
- 239000013590 bulk material Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 12
- 238000005259 measurement Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000004590 computer program Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007619 statistical method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
- G01B21/085—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness using thermal means
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Abstract
The invention provides a method for measuring the thickness of accumulated materials of a seed crystal decomposing tank, a storage medium and electronic equipment, wherein the method comprises the following steps: acquiring the temperature distribution of the outer surface of the seed crystal decomposing tank; obtaining the slurry temperature in the seed crystal decomposing tank; determining a target reference temperature according to the outer surface temperature distribution and the slurry temperature; and determining the thickness of the accumulated material of the seed crystal decomposing tank according to the target reference temperature and the outer surface temperature distribution. The method can measure the thickness of the accumulated material in the seed crystal decomposing tank based on the temperature of the outer surface of the seed crystal decomposing tank and the temperature of slurry in the seed crystal decomposing tank, so that the seed crystal decomposing tank is not required to stop running in the measuring process, and after the slurry is emptied, a technician enters the tank for measurement, thereby realizing the measurement of the thickness of the accumulated material, ensuring the normal production and improving the safety of the technician in the working process.
Description
Technical Field
The invention relates to the technical field of alumina production measurement, in particular to a method for measuring the thickness of accumulated materials of a crystal decomposing tank, a storage medium and electronic equipment.
Background
The seed crystal decomposing tank sometimes causes accumulation at the tank bottom due to the decrease in the intensity of stirring and mixing, thereby causing damage to the stirring equipment. Therefore, in order to find and remove the accumulated material in the seed crystal decomposing tank in time, in the related art, the seed crystal decomposing tank is usually withdrawn from the production process, and slurry in the tank is drained, and a technician enters the tank through a manhole of the seed crystal decomposing tank to measure the thickness of the accumulated material and clean the accumulated material.
However, the measurement mode requires that the seed crystal decomposing tank stops running, so that the normal production is affected, and on the other hand, the measurement of the accumulated materials with large height in the tank is difficult to realize.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art or related art.
To this end, a first aspect of the invention provides a method for measuring the thickness of a seed crystal decomposing tank.
A second aspect of the present invention provides a storage medium.
A third aspect of the invention provides an electronic device.
In view of this, according to a first aspect of an embodiment of the present application, a method for measuring a thickness of a seed crystal decomposing tank is provided, including:
acquiring the temperature distribution of the outer surface of the seed crystal decomposing tank;
obtaining the slurry temperature in the seed crystal decomposing tank;
Determining a target reference temperature according to the outer surface temperature distribution and the slurry temperature;
and determining the thickness of the accumulated material of the seed crystal decomposing tank according to the target reference temperature and the outer surface temperature distribution.
In one possible embodiment, the step of obtaining the temperature distribution of the outer surface of the seed crystal decomposing tank includes:
dividing the outer surface of the seed crystal decomposing tank into a plurality of blocks;
Respectively acquiring the temperature of the outer surface corresponding to each block;
establishing an outer surface temperature distribution map of the seed crystal decomposing tank according to the position of each block on the seed crystal decomposing tank and the outer surface temperature;
And determining the outer surface temperature distribution according to the outer surface temperature distribution map.
In one possible embodiment, the step of determining the target reference temperature from the exterior surface temperature profile and the slurry temperature comprises:
Determining an insignificant accumulation area of the seed crystal decomposing tank according to the outer surface temperature distribution and the slurry temperature;
The average temperature of the non-significant accumulation region is determined as the target reference temperature.
In one possible embodiment, the step of determining the non-significant accumulation region of the seed decomposer based on the external surface temperature distribution and the slurry temperature comprises:
Determining a first temperature difference for each of the outer surface temperatures and the slurry temperature;
comparing each first temperature difference value with a temperature difference threshold value;
under the condition that the first temperature difference value is smaller than the temperature difference threshold value, determining that a block corresponding to the first temperature difference value is an insignificant accumulation block;
wherein the non-significant accumulation region comprises at least one non-significant accumulation block.
In one possible embodiment, the step of determining the average temperature of the non-significant accumulation region as the target reference temperature comprises:
Determining an average value of the outer surface temperatures corresponding to the non-significant accumulation blocks as an average temperature;
The average temperature is determined as the target reference temperature.
In one possible embodiment, the step of determining the thickness of the bulk material of the seed decomposer based on the target reference temperature and the outer surface temperature distribution comprises:
determining a second temperature difference for each of the exterior surface temperatures and the target reference temperature;
Establishing a corresponding relation between the second temperature difference value and the thickness of the accumulated material;
and determining the thickness of the accumulated material according to the corresponding relation and the second temperature difference value.
In one possible embodiment, the method for measuring the thickness of the accumulated material in the seed decomposing tank further includes:
establishing a temperature difference distribution diagram of the seed crystal decomposer according to the position of each block on the seed crystal decomposer and the second temperature difference value;
And establishing a distribution diagram of the accumulation thickness of the seed crystal decomposer according to the position and the accumulation thickness of each block on the seed crystal decomposer.
In a possible embodiment, in the case where the outer surface of the seed crystal decomposing tank includes a plurality of outer surface sections, the method of measuring the bulk thickness of the seed crystal decomposing tank further includes:
respectively acquiring temperature distribution of a plurality of outer surface intervals;
determining a section target reference temperature corresponding to each outer surface section according to each temperature distribution and slurry temperature;
determining the thickness of the interval accumulation according to the interval target reference temperature and the temperature distribution;
Determining the thickness of the accumulated material according to the thicknesses of the accumulated materials in a plurality of intervals;
The external surface sections are divided based on the influence of the environmental temperature on the seed crystal decomposing tank.
In order to achieve the above object, according to a second aspect of the present invention, there is provided a storage medium including a stored program, wherein an apparatus in which the storage medium is controlled to execute the method for measuring the bulk thickness of the seed decomposing tank as set forth in any one of the first aspects when the program is run.
To achieve the above object, according to a third aspect of the present invention, there is provided an electronic device including at least one processor, and at least one memory connected to the processor; wherein the processor is configured to invoke the program instructions in the memory and execute the method for measuring the thickness of the accumulated material in the seed crystal decomposing tank as set forth in any one of the first aspect.
Compared with the prior art, the invention at least comprises the following beneficial effects: the invention provides a method for measuring the thickness of accumulated materials of a seed crystal decomposing tank, which comprises the following steps: acquiring the temperature distribution of the outer surface of the seed crystal decomposing tank; obtaining the slurry temperature in the seed crystal decomposing tank; determining a target reference temperature according to the outer surface temperature distribution and the slurry temperature; and determining the thickness of the accumulated material of the seed crystal decomposing tank according to the target reference temperature and the outer surface temperature distribution. According to the method, the thickness of the accumulated material in the seed crystal decomposing tank can be measured based on the temperature of the outer surface of the seed crystal decomposing tank and the temperature of the slurry in the seed crystal decomposing tank, so that in the measuring process, the operation of the seed crystal decomposing tank is not required to be stopped, the slurry is emptied, and then the slurry enters the tank for measurement by a technician, and the measurement of the thickness of the accumulated material is realized, and meanwhile, the normal production is ensured, and the safety of the technician in the operation process is improved. In addition, the method can also timely master the accumulation condition in the seed crystal decomposing tank based on the accumulation thickness by measuring the accumulation thickness, provide guidance for the specification of the accumulation cleaning strategy, and further be beneficial to prolonging the service life and the maintenance cost of equipment in the seed crystal decomposing tank.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the exemplary embodiments. The drawings are only for purposes of illustrating exemplary embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic flow chart of a method for measuring the bulk thickness of a seed decomposer according to one embodiment of the present application;
fig. 2 is a schematic block diagram of an electronic device according to the present application.
Detailed Description
Exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art.
As shown in fig. 1, according to a first aspect of the embodiment of the present application, a method for measuring a thickness of a bulk material in a seed crystal decomposing tank is provided, including: steps 101 to 104.
Step 101: acquiring the temperature distribution of the outer surface of the seed crystal decomposing tank;
specifically, the outer surface temperature distribution of the seed crystal decomposing tank is used for reflecting the temperature conditions of each position on the outer surface of the seed crystal decomposing tank, and by acquiring the outer surface temperature distribution of the seed crystal decomposing tank, the temperature difference conditions of each position on the outer surface can be analyzed accordingly.
When the accumulation exists on the inner groove wall of the part of the seed crystal decomposition groove, the accumulation can prevent the slurry from contacting with the covered inner groove wall, so that compared with the inner groove wall without the accumulation or with small accumulation thickness, the inner groove wall with large accumulation or accumulation thickness is less influenced by the slurry temperature. Further, when the accumulation conditions at the respective positions on the inner wall of the seed crystal decomposing tank are not uniform, the difference between the temperatures at the respective positions of the outer surface is exhibited when the outer surface temperature distribution of the seed crystal decomposing tank is obtained, and the accumulation conditions in the seed crystal decomposing tank can be analyzed based on the difference in the outer surface temperatures.
Step 102: obtaining the slurry temperature in the seed crystal decomposing tank;
Specifically, by acquiring the slurry temperature in the seed crystal decomposing tank, the temperature condition of the material in the tank can be mastered in time, and further basis and reference are provided for determining the thickness of the accumulated material.
Step 103: determining a target reference temperature according to the outer surface temperature distribution and the slurry temperature;
Specifically, the analysis is performed in combination with the outer surface temperature of the seed crystal decomposing tank and the slurry temperature inside the seed crystal decomposing tank, and the difference between the outer surface temperature and the slurry temperature can be obtained, so that the target reference temperature is determined based on the difference.
Step 104: and determining the thickness of the accumulated material of the seed crystal decomposing tank according to the target reference temperature and the outer surface temperature distribution.
Specifically, the deviation of the temperature of each position of the outer surface of the seed crystal decomposing tank relative to the target reference temperature is analyzed based on the target reference temperature, a large degree of temperature deviation indicates that thicker accumulated material exists on the inner tank wall of the portion corresponding to the position, and a small degree of temperature deviation indicates that the thickness of the accumulated material on the inner tank wall of the portion corresponding to the position is small, so that the thickness of the accumulated material of the seed crystal decomposing tank can be determined based on the target reference temperature and the outer surface temperature distribution.
In summary, the method can measure the thickness of the accumulated material in the seed crystal decomposing tank based on the temperature of the outer surface of the seed crystal decomposing tank and the temperature of the slurry in the seed crystal decomposing tank, so that in the measuring process, the operation of the seed crystal decomposing tank is not required to be stopped, and the slurry is emptied, and then the slurry is measured by a technician in the tank, thereby ensuring the normal production and improving the safety of the technician in the operation process while the measurement of the thickness of the accumulated material is realized.
In addition, the method can also timely master the accumulation condition in the seed crystal decomposing tank based on the accumulation thickness by measuring the accumulation thickness, provide guidance for the specification of the accumulation cleaning strategy, and further be beneficial to prolonging the service life and the maintenance cost of equipment in the seed crystal decomposing tank.
In some possible examples, the obtaining of the external surface temperature distribution of the seed crystal decomposing tank may include, but is not limited to, measuring the temperature of the external surface of the seed crystal decomposing tank by infrared scanning, or monitoring the temperature by uniformly arranging a plurality of temperature sensors on the external surface of the seed crystal decomposing tank.
In some examples, the step of obtaining the external surface temperature distribution of the seed crystal decomposing tank includes:
dividing the outer surface of the seed crystal decomposing tank into a plurality of blocks;
Respectively acquiring the temperature of the outer surface corresponding to each block;
establishing an outer surface temperature distribution map of the seed crystal decomposing tank according to the position of each block on the seed crystal decomposing tank and the outer surface temperature;
And determining the outer surface temperature distribution according to the outer surface temperature distribution map.
Specifically, by dividing the outer surface of the seed crystal decomposing tank into a plurality of blocks and acquiring the outer surface temperature corresponding to each block, the outer surface temperature distribution map of the seed crystal decomposing tank can be established based on the position of each block on the seed crystal decomposing tank and in combination with the outer surface temperature corresponding to each block, so that the outer surface temperature distribution map can be determined according to the outer surface temperature distribution map. Through the mode of the illustration, the temperature distribution condition of the outer surface of the seed crystal decomposing tank can be more visual and is convenient to understand, and convenience and intuitiveness of the thickness measurement process of the accumulated materials are improved.
In some examples, the step of determining the target reference temperature from the exterior surface temperature profile and the slurry temperature includes:
Determining an insignificant accumulation area of the seed crystal decomposing tank according to the outer surface temperature distribution and the slurry temperature;
The average temperature of the non-significant accumulation region is determined as the target reference temperature.
Specifically, based on the outer surface temperature distribution of the seed crystal decomposing tank, the outer surface temperature of each position of the outer surface of the seed crystal decomposing tank can be obtained, and by analyzing the difference between the outer surface temperature and the slurry temperature, the serious accumulation condition on the inner tank wall of the part corresponding to each position can be determined, so that the significant accumulation region and the insignificant accumulation region of the seed crystal decomposing tank, in which the accumulation is serious, can be determined, and the average temperature of the insignificant accumulation region is taken as the target reference temperature.
In some examples, the step of determining the non-significant accumulation region of the seed decomposer based on the external surface temperature profile and the slurry temperature comprises:
Determining a first temperature difference for each of the outer surface temperatures and the slurry temperature;
comparing each first temperature difference value with a temperature difference threshold value;
under the condition that the first temperature difference value is smaller than the temperature difference threshold value, determining that a block corresponding to the first temperature difference value is an insignificant accumulation block;
wherein the non-significant accumulation region comprises at least one non-significant accumulation block.
Specifically, the temperature difference threshold may be set according to the thickness of the groove wall and the material of the groove wall of the seed crystal decomposing groove, so that classification of the plurality of blocks may be achieved by determining a first temperature difference between the outer surface temperature corresponding to each block and the slurry temperature, and comparing each obtained first temperature difference with the temperature difference threshold.
Wherein, under the condition that the first temperature difference is smaller than the temperature difference threshold value, the temperature of the outer surface of the block corresponding to the first temperature difference is close to the slurry temperature, thicker accumulated materials are not formed on the inner groove wall of the part corresponding to the position of the block, and the block can be divided into non-obvious accumulated material blocks; when the first temperature difference is greater than or equal to the temperature difference threshold, the difference between the external surface temperature of the block corresponding to the first temperature difference and the slurry temperature is larger, and thicker accumulated materials exist on the inner groove wall of the part corresponding to the curved block position, and the block can be divided into significant accumulated material blocks.
It will be appreciated that the heat of the slurry in the seed crystal decomposing tank is transferred to the outer surface of the seed crystal decomposing tank by heat conduction, for example, if thicker accumulated materials exist on the inner tank wall of the seed crystal decomposing tank, the heat of the slurry is lost greatly in the conduction process, so that the temperature of the outer tank wall at the corresponding position is smaller and has obvious difference with the temperature of the slurry. Similarly, if thinner accumulated materials exist on the inner groove wall of the seed crystal decomposing groove or even no accumulated materials exist, the loss of the heat of the slurry in the process of transferring to the slurry is smaller, and therefore the temperature of the outer groove wall at the corresponding position is larger and is close to the temperature of the slurry. Further, by analyzing the difference between the outer surface temperature and the slurry temperature corresponding to each block, the significant accumulation region and the non-significant accumulation region of the seed crystal decomposing tank can be determined.
In some examples, the step of determining the average temperature of the non-significant accumulation region as the target reference temperature includes:
Determining an average value of the outer surface temperatures corresponding to the non-significant accumulation blocks as an average temperature;
The average temperature is determined as the target reference temperature.
Specifically, the average temperature of the non-significant accumulation region may be determined by calculating an average value of the outer surface temperatures corresponding to the non-significant accumulation regions, and taking the average temperature as the target reference temperature. And determining the thickness of the accumulated material by utilizing the target reference temperature and combining the temperature distribution of the outer surface of the seed crystal decomposing tank, and providing guidance for the establishment of a cleaning strategy of the accumulated material.
In some examples, the step of determining the bulk thickness of the seed decomposer from the target reference temperature and the outer surface temperature distribution comprises:
determining a second temperature difference for each of the exterior surface temperatures and the target reference temperature;
Establishing a corresponding relation between the second temperature difference value and the thickness of the accumulated material;
and determining the thickness of the accumulated material according to the corresponding relation and the second temperature difference value.
Specifically, by determining the second temperature difference between the outer surface temperature corresponding to each block and the target reference temperature, the deviation of each outer surface temperature from the target reference temperature can be analyzed. By establishing a corresponding relation between the second temperature difference and the accumulation thickness and based on the corresponding relation and the second temperature difference, the accumulation condition corresponding to each block can be obtained, and the accumulation thickness of the seed crystal decomposer is further determined.
It should be noted that, the correspondence between the second temperature difference and the accumulation thickness is related to the tank parameters of the seed crystal decomposing tank, a proportional model of the seed crystal decomposing tank for practical use in production may be established in the early stage of experimental study, and a calibration test of the accumulation thickness and the second temperature difference is performed based on the proportional model, and a graph, a table or a formula capable of reflecting the correspondence between the second temperature difference and the accumulation thickness is obtained by performing statistical analysis on experimental data.
It should be understood that the foregoing manner is merely illustrative of one possible manner of obtaining the correspondence between the second temperature difference and the thickness of the accumulation material, and is not representative of the correspondence being obtained only by the foregoing manner, and the manner of obtaining the correspondence between the second temperature difference and the thickness of the accumulation material may include, but is not limited to, a test, a simulation, etc., and the expression form of the correspondence between the second temperature difference and the thickness of the accumulation material includes, but is not limited to, a correspondence table, a correspondence graph, or a formula.
In some examples, the method of measuring the bulk thickness of the seed decomposer further comprises:
establishing a temperature difference distribution diagram of the seed crystal decomposer according to the position of each block on the seed crystal decomposer and the second temperature difference value;
And establishing a distribution diagram of the accumulation thickness of the seed crystal decomposer according to the position and the accumulation thickness of each block on the seed crystal decomposer.
Specifically, by establishing the temperature difference distribution diagram and the accumulated material thickness distribution diagram of the seed crystal decomposing tank, the temperature distribution situation and the accumulated material distribution situation of each position on the seed crystal decomposing tank can be more intuitively displayed in a graphical mode, so that guidance is further conveniently provided for formulating an accumulated material cleaning strategy, and the efficiency and the effect of accumulated material cleaning work are improved.
In some examples, where the outer surface of the seed decomposer includes a plurality of outer surface intervals, the method of measuring the bulk thickness of the seed decomposer further comprises:
respectively acquiring temperature distribution of a plurality of outer surface intervals;
determining a section target reference temperature corresponding to each outer surface section according to each temperature distribution and slurry temperature;
determining the thickness of the interval accumulation according to the interval target reference temperature and the temperature distribution;
Determining the thickness of the accumulated material according to the thicknesses of the accumulated materials in a plurality of intervals;
The external surface sections are divided based on the influence of the environmental temperature on the seed crystal decomposing tank.
Specifically, based on the environmental temperature influence condition of the seed crystal decomposing tank, the outer surface of the seed crystal decomposing tank can be divided into a plurality of outer surface sections, so that the plurality of outer surface sections are respectively subjected to targeted analysis according to the external environmental difference of the outer surface of the seed crystal decomposing tank, the measurement accuracy of the accumulated material thickness is improved, and the influence of the external environmental temperature of the seed crystal decomposing tank on the external surface temperature is eliminated.
In the case where the outer surface of the seed crystal decomposing tank includes a plurality of outer surface sections, the temperature distribution of the plurality of outer surface sections may be obtained, respectively; determining a section target reference temperature corresponding to each outer surface section according to each temperature distribution and slurry temperature; thus, according to the interval target reference temperature and the temperature distribution of the outer surface interval, determining the interval accumulation thickness corresponding to each outer surface interval; furthermore, the thicknesses of the accumulated materials in the plurality of regions are integrated, and the thickness of the accumulated materials in the seed crystal decomposing tank is determined.
The seed crystal decomposing tank is usually installed in the open air because the entire volume of the seed crystal decomposing tank is large, the diameter is about 20m, and the height is about 40 m. Thus, the outer surface temperature of the seed crystal decomposing tank may be changed to a certain degree by the influence of the external environment temperature. For example, the outer surface temperature of the portion of the seed crystal decomposing tank irradiated with sunlight may be higher than the outer surface temperature of the portion not irradiated with sunlight; for another example, the outer surface temperature of the windward side of the seed crystal decomposing tank may be slightly lower than the outer surface temperature of the leeward side. Therefore, in order to eliminate the influence of the ambient temperature, the outer surface of the seed crystal decomposing tank may be divided into a plurality of sections based on the influence of the ambient temperature, and the temperature distribution corresponding to the plurality of outer surface sections may be acquired, and further, the thickness determination of the accumulated material may be performed independently based on the temperature distribution of the plurality of outer surface sections.
According to a second aspect of the embodiments of the present application, there is also provided a storage medium having a program stored thereon, the program when executed controlling an apparatus in which the storage medium is located to perform the steps of the method for measuring a bulk thickness of a seed crystal decomposing tank as set forth in any one of the first aspect.
According to a third aspect of an embodiment of the present application, there is also provided an electronic device 200, as shown in fig. 2, comprising at least one processor 201, and at least one memory 202 connected to the processor 201; wherein the processor 201 is configured to invoke program instructions in the memory 202 to perform steps of implementing the method for measuring the bulk thickness of the seed decomposer as set forth in any one of the first aspects above.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the application; it will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions; these computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable flow management device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable flow management device, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In one typical configuration, an electronic device may include one or more processors (CPUs), memory, and a bus; the electronic device may also include input/output interfaces, network interfaces, and the like.
The memory may include volatile memory, random Access Memory (RAM) and/or nonvolatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM), in a computer readable medium, the memory including at least one memory chip; memory is an example of a storage medium.
Storage media, including both permanent and non-permanent, removable and non-removable media, may be used to implement information storage by any method or technology; the information may be computer readable instructions, data structures, modules of a program, or other data; examples of storage media for a computer include, but are not limited to, phase change memory (PRAM), static Random Access Memory (SRAM), dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), read Only Memory (ROM), electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, read only optical disk read only memory (CD-ROM), digital Versatile Disks (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices, or any other non-transmission medium, which can be used to store information that can be accessed by a computing device; storage media, as defined herein, does not include transitory computer readable media (transmission media), such as modulated data signals and carrier waves.
The terms "first," "second," "third," "fourth" and the like in the description and in the claims and drawings, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order; it is to be understood that the data so used may be interchanged where appropriate such that the embodiments described herein may be implemented in other sequences than those illustrated or otherwise described herein.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus; without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
It will be appreciated by those skilled in the art that embodiments of the present application may be provided as a method, system, or computer program product; accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects; furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
Computer program code for carrying out operations for embodiments of the present application may be written in one or more programming languages, or combinations thereof, including an object oriented programming language such as Common Lisp, python, C++, objective-C, smalltalk, delphi, java, swift, C #, perl, ruby, javaScript, and PHP and conventional procedural programming languages such as Fortran, ALGOL, COBOL, PL/I, BASIC, pascal and C and the like and any one of the other programming languages such as Lisp, tcl, prolog, visual basic. NET, SQL and R and the like; the program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server; in the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computer (for example, through the Internet using an Internet service provider).
The above is only an example of the present application and is not intended to limit the present application; various modifications and variations of the present application will be apparent to those skilled in the art; any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the application are to be included in the scope of the claims of the present application.
Claims (9)
1. The method for measuring the thickness of the accumulated material of the seed crystal decomposing tank is characterized by comprising the following steps of:
Acquiring the temperature distribution of the outer surface of the seed crystal decomposing tank;
Acquiring the slurry temperature in the seed crystal decomposing tank;
determining a target reference temperature from the outer surface temperature distribution and the slurry temperature;
Determining the thickness of the accumulated material of the seed crystal decomposing tank according to the target reference temperature and the outer surface temperature distribution;
The step of determining a target reference temperature from the outer surface temperature distribution and the slurry temperature includes:
Determining an insignificant accumulation area of the seed crystal decomposing tank according to the outer surface temperature distribution and the slurry temperature;
And determining the average temperature of the non-significant accumulation region as the target reference temperature.
2. The method for measuring a thickness of a bulk material of a seed crystal decomposing tank according to claim 1, wherein the step of obtaining an outer surface temperature distribution of the seed crystal decomposing tank comprises:
Dividing the outer surface of the seed crystal decomposing tank into a plurality of blocks;
Respectively acquiring the temperature of the outer surface corresponding to each block;
Establishing an outer surface temperature distribution map of the seed crystal decomposition tank according to the position of each block on the seed crystal decomposition tank and the outer surface temperature;
And determining the outer surface temperature distribution according to the outer surface temperature distribution map.
3. The method of measuring the bulk thickness of a seed decomposer as set forth in claim 2, wherein said step of determining an insignificant bulk area of said seed decomposer based on said outer surface temperature distribution and said slurry temperature comprises:
determining a first temperature difference for each of said outer surface temperatures and said slurry temperature;
comparing each of the first temperature differences with a temperature difference threshold;
Under the condition that the first temperature difference value is smaller than the temperature difference threshold value, determining the block corresponding to the first temperature difference value as an insignificant accumulation block;
wherein the non-significant accumulation region comprises at least one non-significant accumulation block.
4. A method of measuring a bulk thickness of a seed decomposer as defined in claim 3, wherein the step of determining an average temperature of the non-significant bulk region as the target reference temperature comprises:
Determining an average value of the outer surface temperatures corresponding to the non-significant accumulation blocks as the average temperature;
And determining the average temperature as the target reference temperature.
5. The method of measuring a bulk thickness of a seed decomposer according to claim 2, wherein the step of determining a bulk thickness of the seed decomposer based on the target reference temperature and the outer surface temperature distribution comprises:
determining a second temperature difference for each of the exterior surface temperatures and the target reference temperature;
establishing a corresponding relation between the second temperature difference value and the thickness of the accumulated material;
and determining the thickness of the accumulated material according to the corresponding relation and the second temperature difference value.
6. The method for measuring a bulk thickness of a seed decomposer as set forth in claim 5, further comprising:
Establishing a temperature difference distribution diagram of the seed crystal decomposition tank according to the position of each block on the seed crystal decomposition tank and the second temperature difference value;
and establishing a distribution diagram of the accumulation thickness of the seed crystal decomposer according to the position of each block on the seed crystal decomposer and the accumulation thickness of the block.
7. The method for measuring the bulk thickness of a seed crystal decomposing tank according to claim 1, wherein in a case where an outer surface of the seed crystal decomposing tank includes a plurality of outer surface sections, the method for measuring the bulk thickness of the seed crystal decomposing tank further comprises:
respectively acquiring temperature distribution of a plurality of outer surface intervals;
Determining a zone target reference temperature corresponding to each of the outer surface zones according to each of the temperature profiles and the slurry temperature;
Determining the thickness of interval accumulation according to the interval target reference temperature and the temperature distribution;
Determining the thickness of the accumulated material according to the thicknesses of the accumulated materials in the intervals;
The external surface sections are divided based on the influence of the environmental temperature on the seed crystal decomposing tank.
8. A storage medium comprising a stored program, wherein the program, when run, controls an apparatus in which the storage medium is located to perform the method for measuring the bulk thickness of the seed decomposing tank according to any one of claims 1 to 7.
9. An electronic device comprising at least one processor and at least one memory coupled to the processor, wherein the processor is configured to invoke program instructions in the memory to perform the method of measuring the bulk thickness of a seed decomposer as defined in any one of claims 1 to 7.
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