CN1141733C - Array type optical probe scanning IC photoetching method - Google Patents
Array type optical probe scanning IC photoetching method Download PDFInfo
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- CN1141733C CN1141733C CNB011205989A CN01120598A CN1141733C CN 1141733 C CN1141733 C CN 1141733C CN B011205989 A CNB011205989 A CN B011205989A CN 01120598 A CN01120598 A CN 01120598A CN 1141733 C CN1141733 C CN 1141733C
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- silicon chip
- integrated circuit
- optical probe
- array
- alignment
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Abstract
The present invention belongs to the manufacturing field of microfine engineering. The method uses an array optical probe scanning photoetching process to manufacture an integrated circuit so as to make the minimum line width of the integrated circuit less than 0.1 mu m, at the same time the method has the characteristics of high speed and high efficiency. The present invention can greatly simplify the manufacturing process of the integrated circuit, and provides a novel effective approach for manufacturing super-large-scale integrated circuits.
Description
Technical field
The invention belongs to fine engineering and make the field, particularly array type optical probe scanning is made the method for integrated circuit.
Background technology
The scale of integrated circuit is increasing, and is also more and more littler to the requirement of integrated circuit live width.The making of integrated circuit at present, the incident light wavelength has been reduced to 260nm, and the numerical aperture of lens reaches 0.8, and the live width of circuit minimum reaches 0.18 μ m, near physics limit.The manufacture method of existing integrated circuit mainly is the optical projection manufacture method, and as shown in Figure 1, its making step is as follows:
1) makes the different mask graph plate 3 of a cover;
2) collector lens 2 converges the light that light source 1 sends, and forms corresponding pattern by mask 3 and projection objective 4 on silicon chip 5, thereby makes the photoresist layer sensitization that scribbles on the silicon chip 5 finish photoetching;
3) silicon chip of sensitization is spread, technologies such as doping are finished fixing the sensitization figure;
4) wash original photoresist off, on silicon chip, be coated with new photoresist again;
5) use different mask graph plates to repeat above-mentioned steps, thereby produce a slice integrated circuit.
This method once can only be processed a slice integrated circuit, and also has following shortcomings:
One, owing to be subjected to the restriction of lens numerical aperture and optical source wavelength, the minimum widith of circuit groove reaches the limit of, and is difficult to continue to reduce.
Two, the scheme of this projection is whenever done circuit kit all needs to make mask set, certainly will increase cost of manufacture, especially for small lot batch manufacture.
Summary of the invention
The objective of the invention is to propose a kind of method of array type optical probe scanning photoetching making integrated circuit, utilize the array optical probe scanning to inscribe, can finish groove simultaneously a plurality of integrated circuit (IC) chip for overcoming the weak point of prior art.Can realize ultrahigh resolution, reduce lithographic line width greatly.In addition, can simplify inscription technology to the data direct forming in the computer, avoid dependence for mask.
The method of a kind of array type optical probe scanning photoetching making integrated circuit that the present invention proposes may further comprise the steps:
3) place the sensitization silicon chip that scribbles photoresist on precision stage, and silicon chip is carried out coarse positioning, travelling table is in processing space then;
4) the light probe unit with any two vertical or horizontal interval maximums in the optical probe array is used as pinpoint light probe unit 1
1iWith 1
Mi(or 1
I1With 1
In) on silicon chip, scan separately, make the signal of record silicon chip information, silicon pad alignment and correction when being used for alignment;
5) with each light probe unit 1 in the optical probe array
11～1
MnRespectively automatic focusing is to silicon chip surface, and precision stage is along the reciprocal high-speed motion of certain direction (be made as X to), and along perpendicular to (be made as Y to) accurate stepping.Meanwhile unify each unit light source switch state of synchronization modulation probe array according to integrated circuit pattern by computer; Finish repeatedly inscription to a plurality of integrated circuit (IC) chip on the same silicon chip;
6) travelling table takes out silicon chip outside working space;
7) silicon chip with photoetching spreads, and technologies such as doping are finished fixing to the sensitization figure, wash original photoresist off, are coated with new photoresist again on silicon chip;
8) this silicon chip is carried out the alignment second time, at first the sensitization silicon chip is aimed at said two pinpoint probe units, make itself and last time Working position be complementary, carry out 5 after accurately aiming at)-7) step;
9) repetition 8) step is carried out repeatedly alignment, diffusion and doping, finishes the making to a plurality of integrated circuits.
The integrated circuit pattern signal processing of the computer that relates in the inventive method, and computer control processes, moving etc. of precision stage all belongs to routine techniques, is not described in detail at this.
The present invention has following characteristics:
The first, the present invention utilizes optical probe effectively to reduce the width of groove, under the condition of using shorter light source, adopt near field technique just luminous point can be reduced to 0.1 μ m, guarantee photoetching minimum feature d≤0.1 μ m, if reduce optical source wavelength, can also continue to reduce line width.
The second, the efficient height of photoetching of the present invention, probe array is parallel to be inscribed owing to adopted, and can process a plurality of integrated circuit units simultaneously, makes the time of finishing a plurality of integrated circuit (IC) chip be reduced to identical with the time of inscribing single circuit chip.
Three, the present invention can directly generate integrated circuit with the circuitous pattern in the computer, need not to carry out the making of mask, thereby has simplified traditional ic manufacturing process greatly.
Description of drawings
Fig. 1 is traditional IC photoetching method schematic diagram.
Fig. 2 is the loading and unloading schematic diagram of silicon chip in the array type optical probe scanning of present embodiment.
Fig. 3 is the work schematic diagram of the optical probe array of present embodiment.
Fig. 4 is the flow chart of the computer controlled laser operating state of present embodiment.Between identical.
Three, the present invention can directly generate integrated circuit with the circuitous pattern in the computer, need not to carry out the making of mask, thereby has simplified traditional ic manufacturing process greatly.
Description of drawings
Fig. 1 is traditional IC photoetching method schematic diagram.
Fig. 2 is the loading and unloading schematic diagram of silicon chip in the array type optical probe scanning of present embodiment.
Fig. 3 is the work schematic diagram of the optical probe array of present embodiment.
Fig. 4 is the flow chart of the computer controlled laser operating state of present embodiment.
Embodiment
The embodiment of the method for a kind of array type optical probe scanning photoetching making integrated circuit that the present invention proposes is described with reference to the accompanying drawings as follows shown in Fig. 2,3:
The optical probe array of present embodiment is the square array of the 40*40 that lined up by 1600 probe units, its X all can regulate by computer to the interval to Y, adjustable range is 8mm-20mm, regulates numerical value and determines according to the size that will inscribe integrated circuit (IC) chip.Light probe unit 1 with any two vertical or horizontal interval maximums in the optical probe array
1iWith 1
Mi(or 1
I1With 1
In) as pinpoint light probe unit, have the ability of read and write simultaneously.When inscribing circuit pattern, all identical with the motion and the on off state of other unit.Carrying out accurately on time, they can read the signal on the silicon chip, guarantee that same silicon chip is complementary the position in each inscription process.Whole unit 1
11～1
MnIn remove above-mentioned two special elements and be writing unit, only have the function that silicon chip is inscribed.Probe unit adopts the optical probe technology, utilizes the near field to reduce the minimum dimension of luminous point greatly.Single probe unit constitutes linear array by 100 semiconductor lasers, makes the size of luminous point to regulate, to adapt to the different live widths in the integrated circuit.The used laser of light probe all is the 407nm laser in the present embodiment, and the numerical aperture of object lens is 0.95.
The precision stage of present embodiment adopts air-floating apparatus, can be along X to reciprocal high-speed motion, and its precision is controlled by optical interferometer 51 and 52, and can be along Y to accurate stepping, and precision is controlled by piezoelectric ceramic.It can also finish the loading and unloading of silicon chip along Y to moving to outside the working space.Its overall dimension is roughly 700mm * 400mm, and kinematic accuracy is 0.02 μ m, and movement velocity is 1000mm/s during scanning, line width is adjustable, inscribe the circuit unit of a 20mm * 20mm size, only need about 10 minutes, and this also is the time of finishing 1600 chip block photoetching on the silicon chip simultaneously.
The concrete making step of present embodiment is as follows: Lu Shangdian, and control the Kai Heguan of laser switch according to the gained result.Switching signal is divided into 1600 the tunnel through logic control, finishes control to 1600 lasers through power amplification, guarantees that they have same operating state.Precision stage 3 can be along X to reciprocal high-speed motion, its precision respectively by X to Y to optical interferometer 61 and 62 controls, and can be along Y to accurate stepping, precision is controlled by piezoelectric ceramic.The on off state of the motion conjunction with semiconductors laser by precision stage 3 is finished the inscription to a plurality of integrated circuit (IC) chip simultaneously.The probe unit 1 that is used to aim at
1iWith 1
MiWhat make is the signal that is used for fine alignment, and other unit make integrated circuit (IC) chip.
7) travelling table 3 takes out silicon chip 2 outside working space.
8) silicon chip with sensitization spreads, and technologies such as doping are finished fixing the sensitization figure.Wash original photoresist off, on silicon chip, be coated with new photoresist again.
9) above-mentioned silicon chip is carried out the alignment second time, at first the sensitization silicon chip is aimed at.(Fig. 21 to be used for the accurate read-write probe unit of aiming in the probe array
1iWith 1
Mi), obtain the 4th step and the 6th to go on foot the registration signal make, and write signal on the silicon chip no longer.Move and the Z axle rotates by computer control precision stage XY direction, make its with last time Working position be complementary, accurately aim at the back and finish the alignment second time according to the flow process in the 6th to the 8th step.
10) repeat the 9th step and carry out repeatedly alignment, diffusion and doping, finish making integrated circuit.
Claims (1)
1, a kind of method of array type optical probe scanning photoetching making integrated circuit may further comprise the steps:
1) in computer, finishes original integrated circuit pattern signal processing, control processing with this figure signal by computer;
2) constitute the optical probe array by m * n light probe unit, according to the size that will inscribe circuitous pattern, adjust distance between each probe unit by computer control, make the optical probe array cover whole silicon chip to be processed, it is constant to be fixed after adjusting, and constitutes processing space;
3) place the sensitization silicon chip that scribbles photoresist on precision stage, and silicon chip is carried out coarse positioning, travelling table is in processing space then;
4) the light probe unit with any two vertical or horizontal interval maximums in the optical probe array scans on silicon chip separately as pinpoint light probe unit, makes the signal of record silicon chip information, silicon pad alignment and correction when being used for alignment;
5) automatic focusing is distinguished to silicon chip surface in each light probe unit in the optical probe array, precision stage along X to reciprocal high-speed motion, and along Y to accurate stepping, meanwhile unify each unit light source switch state of synchronization modulation probe array according to integrated circuit pattern, finish repeatedly inscription a plurality of integrated circuit (IC) chip on the same silicon chip by computer;
6) travelling table takes out silicon chip outside working space;
7) silicon chip with photoetching spreads, and doping process is finished fixing to the sensitization figure, washes original photoresist off, is coated with new photoresist again on silicon chip;
8) this silicon chip is carried out the alignment second time, at first the sensitization silicon chip is aimed at said two pinpoint probe units, make itself and last time Working position be complementary, carry out 5 after accurately aiming at)-7) step;
9) repetition 8) step is carried out repeatedly alignment, diffusion and doping, finishes the making to a plurality of integrated circuits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011205989A CN1141733C (en) | 2001-07-26 | 2001-07-26 | Array type optical probe scanning IC photoetching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011205989A CN1141733C (en) | 2001-07-26 | 2001-07-26 | Array type optical probe scanning IC photoetching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1333553A CN1333553A (en) | 2002-01-30 |
| CN1141733C true CN1141733C (en) | 2004-03-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011205989A Expired - Fee Related CN1141733C (en) | 2001-07-26 | 2001-07-26 | Array type optical probe scanning IC photoetching method |
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| Country | Link |
|---|---|
| CN (1) | CN1141733C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101169591B (en) * | 2006-10-23 | 2010-08-11 | 上海华虹Nec电子有限公司 | Lens imaging system for overlay accuracy and its feeding and calibration method |
| US20100196661A1 (en) * | 2009-01-30 | 2010-08-05 | Duerig Urs T | Method for patterning nano-scale patterns of molecules on a surface of a material |
| US11187521B2 (en) * | 2020-04-28 | 2021-11-30 | Mitutoyo Corporation | Rotating chromatic range sensor system with calibration object and method |
| CN111983272B (en) * | 2020-08-14 | 2021-02-12 | 强一半导体（苏州）有限公司 | Method for manufacturing guide plate MEMS probe structure |
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2001
- 2001-07-26 CN CNB011205989A patent/CN1141733C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1333553A (en) | 2002-01-30 |
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