CN114171629A - Heterojunction solar cell and photovoltaic module - Google Patents

Heterojunction solar cell and photovoltaic module Download PDF

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Publication number
CN114171629A
CN114171629A CN202010848132.5A CN202010848132A CN114171629A CN 114171629 A CN114171629 A CN 114171629A CN 202010848132 A CN202010848132 A CN 202010848132A CN 114171629 A CN114171629 A CN 114171629A
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layer
solar cell
heterojunction solar
thickness
intrinsic amorphous
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吴华德
姚铮
张达奇
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Jiaxing Canadian Solar Technology Research Institute
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Jiaxing Canadian Solar Technology Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a heterojunction solar cell and a photovoltaic module, wherein the heterojunction solar cell comprises a monocrystalline silicon substrate, a first intrinsic amorphous layer, a first doping layer, a first transparent conductive film layer and a first collector electrode which are sequentially arranged on the front surface of the monocrystalline silicon substrate in a stacking manner, a second intrinsic amorphous layer, a second doping layer, a second transparent conductive film layer and a second collector electrode which are sequentially arranged on the back surface of the monocrystalline silicon substrate, wherein the doping type of the second doping layer is opposite to that of the first doping layer; the thickness of the first intrinsic amorphous layer is less than the thickness of the second intrinsic amorphous layer; according to the invention, the thickness of the first intrinsic amorphous layer is relatively small, so that the short wave absorption of the front surface of the heterojunction solar cell can be effectively reduced, and the short circuit current of the heterojunction solar cell is improved; the second intrinsic amorphous layer is relatively thick, so that the passivation effect of the back of the heterojunction solar cell can be improved, and the open-circuit voltage of the heterojunction solar cell is improved.

Description

Heterojunction solar cell and photovoltaic module
Technical Field
The invention relates to the field of photovoltaic manufacturing, in particular to a heterojunction solar cell and a photovoltaic module.
Background
The heterojunction solar cell is a relatively high-efficiency crystalline silicon solar cell at present, combines the characteristics of a crystalline silicon cell and a silicon-based thin film cell, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency, more generated energy and the like. Fig. 1 is a schematic structural diagram of a heterojunction solar cell in the prior art, which sequentially includes, from top to bottom, a first collector electrode 51 ', a first transparent conductive film 41 ', a first doped amorphous layer 31 ', a first intrinsic amorphous layer 21 ', a single crystal silicon substrate 10 ', a second intrinsic amorphous layer 22 ', a second doped amorphous layer 32 ', a second transparent conductive film 42 ', and a second collector electrode 52 '.
The amorphous layers of the prior art heterojunction solar cells on both sides of the monocrystalline silicon substrate 10 'are typically of symmetrical design, in particular, the first intrinsic amorphous layer 21' and the second intrinsic amorphous layer 22 'have the same thickness, i.e. d1 ═ d 2'; the first doped amorphous layer 31 'and the second doped amorphous layer 32' have the same thickness. In the specific structure, when the thickness of the amorphous layer is too large, the short-wave absorption of the amorphous layer on the front surface of the heterojunction solar cell is serious, and the short-circuit current of the cell is reduced; when the thickness of the amorphous layer is too small, the passivation effect of the back surface of the heterojunction solar cell is poor, and the open-circuit voltage of the cell is reduced. In addition, the first doped amorphous layer 31 'in the prior art is usually doped amorphous silicon, and although the doped amorphous silicon has good contact with the first intrinsic amorphous layer 21', the short-circuit current of the heterojunction solar cell is reduced due to poor transmittance, which severely limits the efficiency of the heterojunction solar cell. The prior art has attempted to increase the transmittance by adjusting the hydrogen content of the first doped amorphous layer 31' to adjust the optical bandgap, which is not obvious.
In view of the above, there is a need to provide an improved solution to the above problems.
Disclosure of Invention
The present invention is designed to solve at least one of the problems of the prior art, and to achieve the above object, the present invention provides a heterojunction solar cell, which is specifically designed as follows.
A heterojunction solar cell, comprising: the solar cell comprises a monocrystalline silicon substrate, a first intrinsic amorphous layer, a first doping layer, a first transparent conductive film layer and a first collector electrode, wherein the first intrinsic amorphous layer, the first doping layer, the first transparent conductive film layer and the first collector electrode are sequentially arranged on the front surface of the monocrystalline silicon substrate in a stacking mode; the thickness of the first intrinsic amorphous layer is less than the thickness of the second intrinsic amorphous layer.
Further, the thickness of the first intrinsic amorphous layer is 4-6nm, and the thickness of the second intrinsic amorphous layer is 5-10 nm.
Further, the thickness of the second intrinsic amorphous layer is 6-8 nm.
Further, the first intrinsic amorphous layer and the second intrinsic amorphous layer are both amorphous silicon films.
Further, the first doping layer is a microcrystalline silicon oxide film or a microcrystalline silicon carbide film.
Further, the second doping layer is a microcrystalline silicon film.
Further, the thickness of the first doped layer is less than the thickness of the second doped layer.
Further, the thickness of the first doping layer is 4-8nm, and the thickness of the second doping layer is 5-15 nm.
Further, the monocrystalline silicon substrate is n-type monocrystalline silicon, the first doping layer is an n-type doping film, and the second doping layer is a p-type doping film.
Further, the thickness of the first transparent conductive film layer is not greater than the thickness of the second transparent conductive film layer.
The invention also provides a photovoltaic module which is provided with the heterojunction solar cell.
The invention has the beneficial effects that: in the heterojunction solar cell structure provided by the invention, because the thickness of the first intrinsic amorphous layer is smaller than that of the second intrinsic amorphous layer, the short-wave absorption of the front surface of the heterojunction solar cell can be effectively reduced and the short-circuit current of the heterojunction solar cell is improved due to the relatively small thickness of the first intrinsic amorphous layer; the second intrinsic amorphous layer is relatively thick, so that the passivation effect of the back of the heterojunction solar cell can be improved, the open-circuit voltage of the heterojunction solar cell is improved, and the photoelectric conversion efficiency of the heterojunction solar cell can be comprehensively optimized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts. The front and back sides referred to herein are only defined with respect to the positional relationship in the drawings of the embodiments, that is, the front side corresponds to the upper surface of the drawings, and the back side corresponds to the lower surface of the drawings.
FIG. 1 is a schematic diagram of a prior art heterojunction solar cell;
fig. 2 is a schematic diagram of an embodiment of a heterojunction solar cell of the invention.
In the drawing, 10 is a single crystal silicon substrate, 21 is a first intrinsic amorphous layer, 31 is a first doped layer, 41 is a first transparent conductive film layer, 51 is a first collector electrode, 22 is a second intrinsic amorphous layer, 32 is a second doped layer, 42 is a second transparent conductive film layer, and 52 is a second collector electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2, the heterojunction solar cell according to the present invention includes: the semiconductor device includes a single crystal silicon substrate 10, a first intrinsic amorphous layer 21, a first doped layer 31, a first transparent conductive film layer 41, and a first collector electrode 51 sequentially stacked on a front surface of the single crystal silicon substrate 10, and a second intrinsic amorphous layer 22, a second doped layer 32, a second transparent conductive film layer 42, and a second collector electrode 52 sequentially stacked on a rear surface of the single crystal silicon substrate 10.
In the implementation process, the front surface of the monocrystalline silicon substrate 10 corresponds to the light receiving surface of the heterojunction solar cell, and the back surface corresponds to the backlight surface of the heterojunction solar cell. The doping types of the first doped amorphous silicon layer 31 and the second doped amorphous silicon layer 32 are opposite, wherein one of the first doped amorphous silicon layer and the second doped amorphous silicon layer is doped in an n-type manner, namely doped with phosphorus; the other is p-type doping, i.e. boron doping is used.
In the present invention, the thickness of the first intrinsic amorphous layer 21 is smaller than that of the second intrinsic amorphous layer 22.
For the heterojunction solar cell, the influence of the light absorption effect of the light receiving surface on the photoelectric conversion efficiency of the cell is far larger than the influence of the light absorption effect of the backlight surface on the photoelectric conversion efficiency of the cell, and because the thickness of the first intrinsic amorphous layer 21 is relatively small, the loss of sunlight on the light receiving surface when the sunlight passes through the first intrinsic amorphous layer 21 can be effectively reduced, short-wave absorption on the front surface of the heterojunction solar cell can be reduced, and the short-circuit current of the heterojunction solar cell can be improved.
In addition, since the second intrinsic amorphous layer 22 is relatively thick, the passivation effect of the back surface of the heterojunction solar cell can be improved. Specifically, the thicker second intrinsic amorphous layer 22 not only has a better passivation effect, but also can reduce the adverse effect of defects caused by the introduction of the doping element in the second doping layer 32 on the passivation of the interface between the single crystal silicon substrate 10 and the second intrinsic amorphous layer 22 as much as possible. Thus, the open-circuit voltage of the heterojunction solar cell can be improved.
The invention can comprehensively optimize the photoelectric conversion efficiency of the heterojunction solar cell by designing the thickness of the first intrinsic amorphous layer 21 to be smaller than that of the second intrinsic amorphous layer 22.
In a specific embodiment, the first intrinsic amorphous layer 21 has a thickness of 4 to 6nm, and the second intrinsic amorphous layer 22 has a thickness of 4 to 10 nm. It is further preferable that the thickness of the second intrinsic amorphous layer 22 is 6 to 8 nm.
The first and second intrinsic amorphous layers 21 and 22 according to the present invention are both amorphous silicon films.
In the present invention, the first doped layer 31 is a microcrystalline silicon oxide film or a microcrystalline silicon carbide film. Compared with the amorphous silicon film related to the prior art, the microcrystalline silicon oxide film and the microcrystalline silicon carbide film have more excellent light transmittance, so that the short-circuit current of the heterojunction solar cell can be further improved compared with the prior art. In addition, the electrical conductivity of the microcrystalline silicon oxide film and the microcrystalline silicon carbide film is improved to a certain extent compared with that of an amorphous silicon film, an amorphous silicon oxide film and an amorphous silicon carbide film in the prior art, so that the series resistance of the heterojunction solar cell can be reduced, and the filling factor is improved.
Further, the second doping layer 32 according to the present invention is a microcrystalline silicon film. Compared with doped amorphous silicon, microcrystalline silicon oxide or microcrystalline silicon carbide, the doped microcrystalline silicon has higher conductivity, and the microcrystalline silicon film is selected as the second doping layer 32, so that the series resistance of the heterojunction solar cell can be reduced, and the filling factor is improved.
More preferably, the thickness of the first doped layer 31 is smaller than the thickness of the second doped layer 32. In the specific implementation process, the thickness of the first doped layer 31 is 4-8nm, and the thickness of the second doped layer 32 is 5-15 nm. For the heterojunction solar cell, since the thickness of the first doping layer 31 is relatively small, the loss of sunlight on the light receiving surface when the sunlight passes through the first doping layer 31 can be effectively reduced, and the heterojunction solar cell has better photoelectric conversion efficiency.
In some embodiments of the present invention, the single crystal silicon substrate is n-type single crystal silicon, the first doped layer 31 is an n-type doped film, and the second doped layer 32 is a p-type doped film. That is, the microcrystalline silicon oxide film or the microcrystalline silicon carbide film constituting the first doped layer 31 is doped with phosphorus, and the microcrystalline silicon film constituting the second doped layer 32 is doped with boron.
Further, in the present invention, the thickness of the first transparent conductive film layer 41 is less than or equal to the thickness of the second transparent conductive film layer 42. For the heterojunction solar cell, because the thickness of the first transparent conductive film layer 41 is relatively small, the loss of sunlight on the light receiving surface when the sunlight passes through the first transparent conductive film layer 41 can be effectively reduced, and the heterojunction solar cell can have better photoelectric conversion efficiency. In the specific implementation process, the total thickness of the first transparent conductive film 41 is optimally controlled to be 60-120nm, and 60-90nm is optimal.
Based on the above design of the invention, compared with the heterojunction solar cell provided by the prior art, the Efficiency (EFF), the open-circuit voltage Voc, the short-circuit current Isc and the fill factor FF of the heterojunction solar cell are all optimized and improved to a certain extent.
The invention also provides a photovoltaic module which is provided with the heterojunction solar cell.
The invention also discloses a specific manufacturing method of the heterojunction solar cell.
S1, silicon wafer processing: an n-type monocrystalline silicon wafer is selected, an HF solution with the dilution solubility of 5% is used for removing a surface oxide layer, a KOH or NaOH or tetramethyl ammonium hydroxide (TMAH) alcohol adding method is adopted, and a shallow pyramid structure is formed on the surface by utilizing the anisotropic corrosion of monocrystalline silicon, so that the monocrystalline silicon substrate 10 is formed.
S2, manufacturing the intrinsic layer, namely the doped layer thin film: a first intrinsic amorphous layer 21 and a first doping layer 31 are sequentially formed on the front surface of the n-type single crystal silicon substrate 10 through a PECVD process, and a second intrinsic amorphous layer 22 and a second doping layer 32 are sequentially formed on the back surface of the n-type single crystal silicon substrate 10.
S3, preparing a transparent conductive film: and respectively manufacturing a first transparent conductive film 41 and a second transparent conductive film 42 on two surfaces of the monocrystalline silicon substrate 10 on which the amorphous silicon thin film is manufactured by adopting PVD (physical vapor deposition), RPD (reverse plasma deposition) or magnetron sputtering deposition processes.
S4, manufacturing a collector: a layer of low-temperature conductive silver paste is printed on the first transparent conductive film 41 and the second transparent conductive film 42 respectively by a screen printing method, and then sintering is performed at a low temperature of 150-300 ℃ to form good ohmic contact, thereby forming a first collector 51 and a second collector 52.
It is understood that the first intrinsic amorphous layer 21, the first doped layer 31, the second intrinsic amorphous layer 22 and the second doped layer 32 are respectively formed in different coating chambers. In addition, in the four-layer amorphous layer plating process, before the corresponding amorphous layer is plated, the temperature and the pressure of the related plating chamber need to reach preset values, the temperature is usually 180 ℃, and the pressure is controlled to be 30-200 pa.
In order to optimize the passivation effect of the first and second intrinsic amorphous layers 21 and 22 on the single crystal silicon substrate 10, SiH is introduced during the specific manufacturing process of the first and second intrinsic amorphous layers 21 and 224And H2While, H can be adjusted2/SiH4So that the first and second intrinsic amorphous layers 21 and 22 have multiple intrinsic films with different characteristics, usually H2/SiH4The dilution ratio of (A) is in the range of 0 to 250.
In the formation of the first doped layer 31, SiH is added to the microcrystalline silicon oxide film4、H2、CO2And a first type of dopant gas is introduced into the vacuum chamber; if the film layer is a microcrystalline silicon carbide film, SiH is added4、H2、CH4And a first type of dopant gas is introduced into the vacuum chamber. In the specific implementation process, in order to realize the forming of the microcrystalline silicon oxide film or the microcrystalline silicon carbide film, the introduced H2And SiH4Has a large ratio of flow rates, which is generally larger than H in the case of amorphous silicon oxide or amorphous silicon carbide2And SiH4The flow rate ratio of (1).
In the fabrication of the second doped layer 32, SiH is added4、H2And a second type dopant gas is introduced into the vacuum chamber. Similarly, in the embodiment, the second doping layer 32 is made of microcrystalline silicon film, and H is introduced2And SiH4Also has a larger ratio of flow rates than H in the case of amorphous silicon2And SiH4The flow rate ratio of (1).
It should be understood that in the present invention, the first type dopant gas is referred to as PH3(Hydrogen phosphide) gas and B2H6One of the (diborane) gases, the second type dopant gas being PH3(Hydrogen phosphide) gas and B2H6The other of (diborane) gases.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.

Claims (11)

1. A heterojunction solar cell, comprising: the solar cell comprises a monocrystalline silicon substrate, a first intrinsic amorphous layer, a first doping layer, a first transparent conductive film layer and a first collector electrode, wherein the first intrinsic amorphous layer, the first doping layer, the first transparent conductive film layer and the first collector electrode are sequentially arranged on the front surface of the monocrystalline silicon substrate in a stacking mode; the thickness of the first intrinsic amorphous layer is less than the thickness of the second intrinsic amorphous layer.
2. The heterojunction solar cell of claim 1, wherein the thickness of the first intrinsic amorphous layer is 4-6nm and the thickness of the second intrinsic amorphous layer is 5-10 nm.
3. The heterojunction solar cell of claim 2, wherein the thickness of the second intrinsic amorphous layer is 6-8 nm.
4. The heterojunction solar cell of any of claims 1-3, wherein said first intrinsic amorphous layer and said second intrinsic amorphous layer are both amorphous silicon films.
5. The heterojunction solar cell of any of claims 1-3, wherein the first doped layer is a microcrystalline silicon oxide film or a microcrystalline silicon carbide film.
6. The heterojunction solar cell of any of claims 1-3, wherein said second doped layer is a microcrystalline silicon film.
7. The heterojunction solar cell of any of claims 1-3, wherein the thickness of the first doped layer is less than the thickness of the second doped layer.
8. The heterojunction solar cell of claim 7, wherein the thickness of the first doped layer is between 4 and 8nm and the thickness of the second doped layer is between 5 and 15 nm.
9. The heterojunction solar cell of any of claims 1-3, wherein said monocrystalline silicon substrate is n-type monocrystalline silicon, said first doped layer is an n-type doped film, and said second doped layer is a p-type doped film.
10. The heterojunction solar cell of any of claims 1-3, wherein the thickness of the first transparent conductive film layer is not greater than the thickness of the second transparent conductive film layer.
11. A photovoltaic module having a heterojunction solar cell according to any of claims 1 to 10.
CN202010848132.5A 2020-08-21 2020-08-21 Heterojunction solar cell and photovoltaic module Pending CN114171629A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060283499A1 (en) * 2005-02-25 2006-12-21 Sanyo Electric Co., Ltd. Photovoltaic cell
US20120097226A1 (en) * 2010-10-26 2012-04-26 Samsung Electronics Co., Ltd Solar cell and method of manufacturing the same
CN106057926A (en) * 2016-08-24 2016-10-26 常州天合光能有限公司 Passivated emitting electrode solar cell with laminated heterojunction structure and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060283499A1 (en) * 2005-02-25 2006-12-21 Sanyo Electric Co., Ltd. Photovoltaic cell
US20120097226A1 (en) * 2010-10-26 2012-04-26 Samsung Electronics Co., Ltd Solar cell and method of manufacturing the same
CN106057926A (en) * 2016-08-24 2016-10-26 常州天合光能有限公司 Passivated emitting electrode solar cell with laminated heterojunction structure and preparation method thereof

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