CN114150381B - 一种碳化硅外延生长装置 - Google Patents
一种碳化硅外延生长装置 Download PDFInfo
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- CN114150381B CN114150381B CN202111350762.0A CN202111350762A CN114150381B CN 114150381 B CN114150381 B CN 114150381B CN 202111350762 A CN202111350762 A CN 202111350762A CN 114150381 B CN114150381 B CN 114150381B
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 119
- 239000007921 spray Substances 0.000 claims abstract description 21
- 239000012495 reaction gas Substances 0.000 claims abstract description 18
- 239000012159 carrier gas Substances 0.000 claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 47
- 230000002093 peripheral effect Effects 0.000 claims description 24
- 238000010926 purge Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 206010037544 Purging Diseases 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 5
- 238000009434 installation Methods 0.000 abstract description 4
- 238000005192 partition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202111350762.0A CN114150381B (zh) | 2021-11-15 | 2021-11-15 | 一种碳化硅外延生长装置 |
Applications Claiming Priority (1)
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CN202111350762.0A CN114150381B (zh) | 2021-11-15 | 2021-11-15 | 一种碳化硅外延生长装置 |
Publications (2)
Publication Number | Publication Date |
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CN114150381A CN114150381A (zh) | 2022-03-08 |
CN114150381B true CN114150381B (zh) | 2023-10-31 |
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CN202111350762.0A Active CN114150381B (zh) | 2021-11-15 | 2021-11-15 | 一种碳化硅外延生长装置 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114737254B (zh) * | 2022-06-09 | 2022-08-23 | 芯三代半导体科技(苏州)有限公司 | 一种碳化硅外延生长装置及生长工艺方法 |
CN115434009A (zh) * | 2022-09-30 | 2022-12-06 | 瀚天天成电子科技(厦门)有限公司 | 一种碳化硅外延生长源管路*** |
CN117089927B (zh) * | 2023-10-14 | 2024-01-23 | 芯三代半导体科技(苏州)有限公司 | 一种薄膜外延设备的气体吹扫***及吹扫方法 |
CN118007093B (zh) * | 2024-02-19 | 2024-07-26 | 江苏协鑫特种材料科技有限公司 | 一种用于碳化硅涂层生产的沉积炉进气结构 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004172386A (ja) * | 2002-11-20 | 2004-06-17 | Furukawa Co Ltd | 気相成長装置のガス吹き出し部 |
CN103074605A (zh) * | 2012-12-26 | 2013-05-01 | 光达光电设备科技(嘉兴)有限公司 | 喷淋头及化学气相沉积设备 |
CN103757606A (zh) * | 2013-12-31 | 2014-04-30 | 南昌黄绿照明有限公司 | 一种mocvd气路压差控制*** |
CN104131267A (zh) * | 2014-08-21 | 2014-11-05 | 哈尔滨师范大学 | 磁控溅射辅助的mocvd装置及方法 |
CN109423695A (zh) * | 2017-08-31 | 2019-03-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 掺杂源供应管路及化学气相沉积*** |
CN111560605A (zh) * | 2020-06-18 | 2020-08-21 | 北京北方华创微电子装备有限公司 | 原子层沉积设备的前驱体传输装置和前驱体传输方法 |
CN113302719A (zh) * | 2019-01-16 | 2021-08-24 | 株式会社电装 | 半导体制造装置 |
-
2021
- 2021-11-15 CN CN202111350762.0A patent/CN114150381B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004172386A (ja) * | 2002-11-20 | 2004-06-17 | Furukawa Co Ltd | 気相成長装置のガス吹き出し部 |
CN103074605A (zh) * | 2012-12-26 | 2013-05-01 | 光达光电设备科技(嘉兴)有限公司 | 喷淋头及化学气相沉积设备 |
CN103757606A (zh) * | 2013-12-31 | 2014-04-30 | 南昌黄绿照明有限公司 | 一种mocvd气路压差控制*** |
CN104131267A (zh) * | 2014-08-21 | 2014-11-05 | 哈尔滨师范大学 | 磁控溅射辅助的mocvd装置及方法 |
CN109423695A (zh) * | 2017-08-31 | 2019-03-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 掺杂源供应管路及化学气相沉积*** |
CN113302719A (zh) * | 2019-01-16 | 2021-08-24 | 株式会社电装 | 半导体制造装置 |
CN111560605A (zh) * | 2020-06-18 | 2020-08-21 | 北京北方华创微电子装备有限公司 | 原子层沉积设备的前驱体传输装置和前驱体传输方法 |
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CN114150381A (zh) | 2022-03-08 |
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Address after: 215000 building s, 104 Sumu Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: Xin San Dai Semiconductor Technology (Suzhou) Co.,Ltd. Country or region after: China Address before: 215000 building s, 104 Sumu Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee before: Core semiconductor technology (Suzhou) Co.,Ltd. Country or region before: China |
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