CN114147623B - Sapphire aspheric element shaping and combined polishing method based on temperature control magneto-rheological - Google Patents
Sapphire aspheric element shaping and combined polishing method based on temperature control magneto-rheological Download PDFInfo
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- CN114147623B CN114147623B CN202111334756.6A CN202111334756A CN114147623B CN 114147623 B CN114147623 B CN 114147623B CN 202111334756 A CN202111334756 A CN 202111334756A CN 114147623 B CN114147623 B CN 114147623B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a temperature-control magnetorheological-based sapphire aspheric element shaping and combined polishing method, which comprises the steps of controlling the temperature of a polishing environment at the optimal temperature for growth of a sapphire hydrated layer in the process of carrying out magnetorheological polishing on a sapphire aspheric element, and controlling the stability of the temperature in the polishing process through a constant temperature device, so that the surface of the sapphire aspheric element is converted into a softer sapphire hydrated layer to the greatest extent, and the efficient magnetorheological polishing removal of the sapphire aspheric element is realized. The method can convert the surface of the sapphire aspheric surface element into a softer sapphire hydration layer with the maximum efficiency, realizes the high-efficiency magnetorheological polishing removal of the sapphire aspheric surface element, solves the problem of low removal efficiency of the magnetorheological polishing sapphire material by using a temperature control mode, realizes the high-precision low-defect manufacture of the sapphire aspheric surface optical element, and improves the polishing efficiency while keeping the advantages of magnetorheological polishing.
Description
Technical Field
The invention relates to an optical element processing technology, in particular to a method for modifying and polishing a sapphire aspheric surface element based on temperature control magneto-rheological property.
Background
With the demands of optical systems for high performance, light weight and miniaturization, aspheric optical elements have greater degrees of freedom and flexibility than conventional planar and spherical elements, and can more effectively correct various aberrations, so that the manufacturing and processing of aspheric optical elements are becoming the key points of modern optical research.
Sapphire as a high hardness oxide crystal (Al) 2 O 3 ) The material has excellent optical, thermal, chemical and mechanical properties, is widely applied to the fields of LED substrates, optical communication polarizing plates, superconducting films, infrared detector windows and the like based on the excellent material characteristics, and particularly has an irreplaceable position in the aspect of being used as a base material of an optical element.
Ultra-precision polishing is usually used as the last process of processing, so that the surface of an element has ultra-smooth and nondestructive processing quality, the existing polishing mode of sapphire mainly adopts chemical mechanical polishing, and the sapphire surface is softened by using chemical components through adjusting the pH value of a polishing solution and is removed by mechanical energy. However, this method requires normal pressing, still leaves a few scratches on the surface after processing, and has less application in the field of polishing processing of aspheric elements.
Magnetorheological polishing is used as a flexible body polishing technology, the normal pressure is extremely low, the depth of abrasive particles pressed into a workpiece is shallow, materials are removed mainly through the shearing action, high-quality surfaces are obtained, surface and sub-surface damage is hardly generated, and high-surface-quality polishing of aspheric elements can be achieved. However, the mohs hardness of sapphire is 9, and the magnetorheological polishing removal efficiency is extremely low.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the method can convert the surface of the sapphire aspheric surface element into a softer sapphire hydrated layer with the maximum efficiency, realizes high-efficiency magnetorheological polishing removal of the sapphire aspheric surface element, solves the problem of low removal efficiency of a magnetorheological polishing sapphire material by using a temperature control mode, realizes high-precision low-defect manufacturing of the sapphire aspheric surface optical element, and improves the polishing efficiency while keeping the advantages of magnetorheological polishing.
In order to solve the technical problems, the invention adopts the technical scheme that:
a sapphire aspheric surface element shaping method based on temperature control magneto-rheological comprises the following steps: in the process of carrying out magneto-rheological polishing on the sapphire aspheric surface element, the temperature of the polishing environment is controlled to be the optimal temperature for growth of the sapphire hydrated layer, and the stability of the temperature in the polishing process is controlled by a constant temperature device, so that the surface of the sapphire aspheric surface element is converted into a softer sapphire hydrated layer to the greatest extent, and the high-efficiency magneto-rheological polishing removal of the sapphire aspheric surface element is realized.
Optionally, the optimal temperature for the growth of the sapphire hydrated layer is 75 ℃.
Optionally, the other process parameters in the process of performing magnetorheological polishing on the sapphire aspheric element include: the rotating speed is 220rpm, the flow is 100L/min, the compression depth coefficient is 0.20, the magnetic field intensity is 7A, and the abrasive particles in the magnetorheological fluid are diamond particles.
Optionally, the magnetorheological polishing on the sapphire aspheric element comprises: acquiring a magnetorheological processing removal function of the sapphire aspheric element, calculating residence time and a processing path according to the initial surface type and the removal function of the processed sapphire aspheric element, generating a processing code according to the residence time and the processing path, and performing magnetorheological shaping on a workpiece by using the processing code.
In addition, the invention also provides a sapphire aspheric element combined polishing method based on temperature control magneto-rheological, which comprises the following steps:
1) Carrying out numerical control grinding rough machining on the sapphire sample;
2) Carrying out magnetorheological roughing and shape modification on the sapphire sample, cleaning, and carrying out CCOS immersion polishing to remove residual intermediate frequency errors;
3) Cleaning the sapphire sample to remove large-size particle residues, detecting the surface shape and the comet tail defect of the sapphire sample, and skipping to execute the step 2 if the surface shape or the comet tail defect detection does not meet the requirement); otherwise, skipping to execute the next step;
4) Carrying out magneto-rheological fine modification on the sapphire sample by adopting the temperature-control magneto-rheological based sapphire aspheric element polishing method, cleaning and then carrying out CCOS immersion polishing;
5) Detecting the defects of the surface shape and the comet tail of the sapphire sample, and skipping to execute the step 4 if the defects of the surface shape or the comet tail are not met; otherwise, skipping to execute the next step;
6) And processing the sample piece which meets the index requirement after polishing by using an ion beam shape modification process to converge the surface shape error.
Optionally, when the CCOS immersion polishing is performed in step 2), the type of the polishing disk is damping cloth polishing disk, the polishing liquid is alumina polishing liquid, the cycle processing time is 15min, and the rule of the motion trajectory is selected so that the motion trajectory of the polishing particles is more disordered while the removal efficiency is ensured to achieve error randomization and surface smoothing.
Optionally, the pH value of the polishing solution is controlled to be 11, and the regulator is NaOH.
Optionally, the step 3) of cleaning the sapphire sample to remove large-size particle residues refers to cleaning the sapphire sample with clear water.
Optionally, the cleaning in step 4) refers to ultrasonic cleaning of the sapphire sample with ionized water, and then wiping with alcohol cotton.
Optionally, when the CCOS immersion polishing is performed in step 4), the polishing parameters are: the pH value is 11, the temperature is 50 ℃, the rotation is 2500rpm, the revolution is 2400rpm, the pressure is 0.20Mpa, and the processing time is 15min.
Compared with the prior art, the invention has the following advantages:
1. according to the phenomenon that the surface of the sapphire element is hydrolyzed to generate a softer AlO (OH) hydrated layer in the polishing process, the temperature of the polishing environment is controlled to be the optimal temperature for growth of the sapphire hydrated layer, and the temperature stability in the polishing process is controlled by the constant temperature device, so that the surface of the sapphire aspheric element can be converted into the softer sapphire hydrated layer at the maximum efficiency, the efficient magnetorheological polishing removal of the sapphire aspheric element is realized, the problem of low removal efficiency of a magnetorheological polishing sapphire material is solved by using a temperature control mode, the high-precision low-defect manufacturing of the sapphire aspheric optical element is realized, and the polishing efficiency is improved while the advantage of magnetorheological polishing is kept.
2. Compared with the traditional processing mode, the method has no multiple steps in operation and has greater feasibility; the device is simple, easy to operate, low in cost and good in effect.
3. The method is suitable for processing the plane, the spherical surface and the non-spherical surface of the sapphire material, and has high processing precision and strong practicability.
Drawings
FIG. 1 is a schematic flow chart of an embodiment of the combined polishing method according to the present invention.
FIG. 2 is a partial schematic diagram of temperature controlled CCOS immersion polishing in accordance with an embodiment of the present invention.
FIG. 3 is a schematic diagram of a temperature controlled magnetorheological finishing portion in an embodiment of the invention.
FIG. 4 is a graph of removal efficiency versus temperature for CCOS immersion polishing in accordance with an embodiment of the present invention.
FIG. 5 is a graph illustrating MR polishing removal efficiency versus temperature according to an embodiment of the present invention.
FIG. 6 is a graph comparing the removal efficiency per unit time for temperature controlled magnetorheological polishing and conventional magnetorheological polishing in accordance with an embodiment of the present invention.
FIG. 7 is a surface quality chart of a sample after combined machining according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below with reference to the preparation of a sapphire aspherical mirror of a certain type having a certain surface type error PV < 0.5 λ and a surface quality Ra < 2nm as an example of the sapphire aspherical element.
The embodiment provides a method for modifying a sapphire aspheric element based on temperature control and magnetorheological, which comprises the following steps: in the process of carrying out magneto-rheological polishing on the sapphire aspheric surface element, the temperature of the polishing environment is controlled to be the optimal temperature for growth of the sapphire hydrated layer, and the stability of the temperature in the polishing process is controlled through a constant temperature device, so that the surface of the sapphire aspheric surface element is converted into a softer sapphire hydrated layer to the greatest extent, and the efficient magneto-rheological polishing removal of the sapphire aspheric surface element is realized.
The optimum temperature for growth of the sapphire hydrated layer was tested to be 75 ℃.
In this embodiment, through performing an orthogonal experiment on different process parameters, a process parameter most beneficial to generation and removal of a softening layer is obtained, and specifically, other process parameters in the process of performing magnetorheological polishing on a sapphire aspheric element in this embodiment include: the rotating speed is 220rpm, the flow is 100L/min, the compression depth coefficient is 0.20, the magnetic field intensity is 7A, and the abrasive particles in the magnetorheological fluid are diamond particles.
In this embodiment, the magnetorheological polishing process for the sapphire aspheric element includes: acquiring a magnetorheological processing removal function of the sapphire aspheric element, calculating residence time and a processing path according to the initial surface type and the removal function of the processed sapphire aspheric element, generating a processing code according to the residence time and the processing path, and performing magnetorheological shaping on a workpiece by using the processing code.
As shown in fig. 1, this embodiment further provides a method for polishing a sapphire aspheric element combination based on temperature control and magnetorheological, including:
1) Carrying out numerical control grinding rough machining on the sapphire sample;
2) Carrying out magnetorheological rough modification on the sapphire sample, cleaning, and carrying out CCOS immersion polishing to remove residual intermediate frequency errors;
3) Cleaning the sapphire sample to remove large-size particle residues, detecting the surface shape and the comet tail defect of the sapphire sample, and skipping to execute the step 2 if the surface shape or the comet tail defect detection does not meet the requirement); otherwise, skipping to execute the next step;
4) Carrying out magneto-rheological fine modification on a sapphire sample by adopting the temperature-control magneto-rheological based sapphire aspheric element polishing method, cleaning and then carrying out CCOS immersion polishing;
5) Detecting the surface shape and the comet tail defect of the sapphire sample piece, and skipping to execute the step 4 if the surface shape or the comet tail defect detection does not meet the requirement); otherwise, skipping to execute the next step;
6) And processing the polished sample piece meeting the index requirement by using an ion beam shape modification process to converge the surface shape error.
In the embodiment, the sapphire aspheric surface element combined polishing method based on temperature control and magneto-rheological is characterized in that after numerical control grinding is carried out on a sapphire aspheric surface workpiece, rough modification is carried out on the sapphire aspheric surface workpiece by means of magneto-rheological polishing and CCOS immersion polishing, and an element surface meeting the requirements of an initial surface type and surface quality is obtained; and after rough shape modification and polishing, fine shape modification is carried out through the optimized parameters, namely: the CCOS polishing in the step 4) adopts optimized parameters, and the magneto-rheological polishing in the steps 2) and 4) adopts optimized parameters; and finally, further converging the surface shape error of the workpiece by adopting low-energy ion beam etching. Experiments show that the method realizes the high-efficiency, high-precision and ultra-smooth forming processing of the sapphire aspheric surface element.
It should be noted that, in the step 2), the magnetorheological rough modification may be performed on the sapphire sample according to a conventional rough modification technology, for example, in this embodiment, the magnetorheological rough modification technology is used as in the step 4) for convenience.
In the embodiment, the CCOS immersion polishing in the step 2) is only rough machining, and the machining mode is the traditional CCOS immersion polishing, so that a temperature control measure is not needed; in this embodiment, when the CCOS immersion polishing is performed in step 2), the type of the polishing disk is damping cloth, the polishing liquid is alumina polishing liquid, the polishing environment temperature is controlled at 50 ℃, the cycle processing time is 15min, and the rule of the motion trajectory is selected so that the removal efficiency is ensured and the motion trajectory of the polishing particles is more disordered to achieve error randomization and surface smoothing. When CCOS immersion polishing is carried out in the step 2), the size and the shape of the polishing disk can be selected according to the surface type of a workpiece to be processed.
As shown in fig. 2, when the CCOS immersion polishing is performed, the sapphire sample 2 is immersed in the alumina polishing solution 3, the CCOS small grinding head 1 also extends into the alumina polishing solution 3 to polish the sapphire sample 2, and the bottom of the container of the alumina polishing solution 3 is provided with a heating element 5 and a temperature controller 4 for controlling the heating element 5. In this embodiment, the heating element 5 is a Pi heating film (specifically, a hundred year old RBN-Pi-001 heating film), and the temperature controller 4 is a Pid controller (specifically, an andon 900U electronic temperature controller).
In this embodiment, the pH of the polishing solution is controlled to 11, and the adjusting agent is NaOH.
In this embodiment, the step 3) of cleaning the sapphire sample to remove the large-size particle residues refers to cleaning the sapphire sample with clear water, and washing away the large-size particle residues on the surface of the workpiece with the clear water.
As shown in fig. 3, when performing magnetorheological finishing on the sapphire sample in step 4), the sapphire sample 2 is fixed on a cast aluminum heating plate 9 (specifically, a xuankang XKDR50-600 type cast aluminum heating plate) through three calipers 10, the cast aluminum heating plate 9 is provided with a corresponding temperature controller 4, and the temperature controller 4 is also a Pid controller. And (3) performing magnetorheological fine modification on the upper side of the sapphire sample 2 by using a polishing wheel 7 and magnetorheological polishing liquid 6 by using the temperature-control magnetorheological-based sapphire aspheric element polishing method.
In this embodiment, the cleaning in step 4) refers to ultrasonic cleaning of the sapphire sample with ionized water, and then wiping with alcohol cotton.
In this embodiment, since the CCOS immersion polishing in step 4) is performed to form a fine shape, a temperature control measure is required. When CCOS immersion polishing is carried out in the step 4), the polishing parameters are as follows: the pH value is 11, the temperature is 50 ℃, the rotation is 2500rpm, the revolution is 2400rpm, the pressure is 0.20Mpa, and the processing time is 15min.
The diameter of the sapphire sample piece is 100mm, and full-caliber modification is carried out. The processing is carried out by adopting a ZYGO white light interferometer and an MST interferometer. The ZYGO white light interferometer is used for measuring the surface roughness, and the MST interferometer is used for measuring the surface shape. The initial profile PV of the sapphire was 0.937 λ with an RMS value of 2.088nm.
FIG. 4 is a graph of CCOS immersion polishing removal efficiency versus temperature, and FIG. 5 is a graph of magnetorheological polishing removal efficiency versus temperature; FIG. 6 is a graph comparing removal efficiency per unit time for temperature controlled magnetorheological polishing and conventional magnetorheological polishing; fig. 7 is a surface quality chart of a sample after combined machining. As can be seen from fig. 4 to 7, the removal efficiency of the magnetorheological polishing and the CCOS immersion polishing can be effectively improved by controlling the temperature during polishing, and meanwhile, the surface roughness can be kept better, and the sample piece processed by the combined process has better surface quality.
In summary, the method of the present embodiment is designed to research and explore a polishing removal mechanism of a sapphire material, and summarize the polishing removal mechanism and influencing factors of the sapphire material on the basis of the existing research situation, because the sapphire material is mainly subjected to chemical mechanical polishing in a conventional processing manner, scratches are remained, and the removal efficiency of the sapphire material by the magnetorheological polishing without surface and subsurface damages is very low, the temperature control and magnetorheological based sapphire aspheric element combined polishing method proposed for the problem realizes the magnetorheological polishing removal of the sapphire material by controlling the temperature of the polishing environment to 75 ℃ which is the optimal temperature for the growth of a sapphire hydrated layer (AlO (OH)), and converting the sapphire surface into softer AlO (OH) with the maximum efficiency. In addition, the ion beam has higher convergence efficiency on the surface shape and higher precision, and has little influence on the surface roughness. The combined processing technology adopts the immersion type polishing to repair the surface shape precision, so that the combined processing technology has better surface shape precision than the magneto rheological polishing, and simultaneously introduces the ion beam polishing to improve the surface shape precision by one grade, thereby obtaining a surface with high quality.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiments, and all technical solutions that belong to the idea of the present invention belong to the scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (9)
1. A sapphire aspheric element shape modifying method based on temperature control magneto-rheological is characterized by comprising the following steps: in the process of carrying out magneto-rheological polishing on the sapphire aspheric surface element, the temperature of the polishing environment is controlled to be the optimal temperature for growth of the sapphire hydrated layer, and the stability of the temperature in the polishing process is controlled by a constant temperature device, so that the surface of the sapphire aspheric surface element is converted into a softer sapphire hydrated layer at the maximum efficiency, the efficient magneto-rheological polishing removal of the sapphire aspheric surface element is realized, and the optimal temperature for growth of the sapphire hydrated layer is 75 ℃.
2. The temperature control magnetorheological-based sapphire aspheric element modification method according to claim 1, wherein the other process parameters in the magnetorheological polishing of the sapphire aspheric element comprise: the rotating speed is 220rpm, the flow is 100L/min, the compression depth coefficient is 0.20, the magnetic field intensity is 7A, and the abrasive particles in the magnetorheological fluid are diamond particles.
3. The temperature control magnetorheological-based sapphire aspheric element shaping method according to claim 2, wherein the magnetorheological polishing process for the sapphire aspheric element comprises the following steps: acquiring a magnetorheological processing removal function of the sapphire aspheric surface element, calculating residence time and a processing path according to the initial surface type of the processed sapphire aspheric surface element and the removal function, generating a processing code according to the residence time and the processing path, and performing magnetorheological shaping on a workpiece by using the processing code.
4. A sapphire aspheric element combined polishing method based on temperature control magneto-rheological is characterized by comprising the following steps:
1) Carrying out numerical control grinding rough machining on the sapphire sample;
2) Carrying out magnetorheological roughing and shape modification on the sapphire sample, cleaning, and carrying out CCOS immersion polishing to remove residual intermediate frequency errors;
3) Cleaning the sapphire sample to remove large-size particle residues, detecting the surface shape and the comet tail defect of the sapphire sample, and skipping to execute the step 2 if the surface shape or the comet tail defect detection does not meet the requirement); otherwise, skipping to execute the next step;
4) Carrying out magneto-rheological finishing on the sapphire sample by adopting the method for polishing the sapphire aspheric surface element based on temperature control magneto-rheological according to any one of claims 1 to 3, cleaning and then carrying out CCOS immersion polishing;
5) Detecting the defects of the surface shape and the comet tail of the sapphire sample, and skipping to execute the step 4 if the defects of the surface shape or the comet tail are not met; otherwise, skipping to execute the next step;
6) And processing the polished sample piece meeting the index requirement by using an ion beam shape modification process to converge the surface shape error.
5. The temperature-controlled magnetorheological-based sapphire aspheric element combined polishing method according to claim 4, wherein in the step 2) of CCOS immersion polishing, the type of the polishing disk is damping cloth polishing disk, the polishing liquid is alumina polishing liquid, the cycle processing time is 15min, and the motion trajectory rule is selected so that the removal efficiency is ensured and the motion trajectory of the polishing particles is more disordered to realize error randomization and surface smoothing.
6. The method for polishing sapphire aspheric element combination based on temperature control and magnetorheological of claim 5, wherein the pH value of the polishing solution is controlled at 11, and the conditioning agent is NaOH.
7. The temperature control magnetorheological-based sapphire aspheric element combined polishing method according to claim 6, wherein the step 3) of cleaning the sapphire sample to remove large-size particle residues is to clean the sapphire sample with clear water.
8. The method for polishing the sapphire aspheric element combination based on temperature control and magnetorheological finishing as claimed in claim 7, wherein the cleaning in the step 4) is ultrasonic cleaning of the sapphire sample with ionized water and then wiping with alcohol cotton.
9. The temperature control magnetorheological-based sapphire aspheric element combined polishing method according to claim 6, wherein the polishing parameters during the CCOS immersion polishing in the step 4) are as follows: the pH value is 11, the temperature is 50 ℃, the rotation is 2500rpm, the revolution is 2400rpm, the pressure is 0.20Mpa, and the processing time is 15min.
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| CN2721313Y (en) * | 2004-08-19 | 2005-08-31 | 西安工业学院 | Flexible polisher of non-spherical optical component |
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| CN102713027A (en) * | 2009-10-22 | 2012-10-03 | 先进再生能源有限责任公司 | Crystal growth methods and systems |
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| CN2721313Y (en) * | 2004-08-19 | 2005-08-31 | 西安工业学院 | Flexible polisher of non-spherical optical component |
| CN1833816A (en) * | 2005-11-23 | 2006-09-20 | 周海 | Nano-glass supersmooth processing technique of sapphire crystal sheet |
| CN110253147A (en) * | 2019-06-19 | 2019-09-20 | 浙江工业大学 | A kind of laser assisted hydration processing polished method |
| CN110202473A (en) * | 2019-06-27 | 2019-09-06 | 苏州宇瑞龙智能装备科技有限公司 | A kind of sapphire Internal Spherical Surface grinding skive |
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