CN114127965B - Optoelectronic component - Google Patents

Optoelectronic component Download PDF

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Publication number
CN114127965B
CN114127965B CN202080050420.4A CN202080050420A CN114127965B CN 114127965 B CN114127965 B CN 114127965B CN 202080050420 A CN202080050420 A CN 202080050420A CN 114127965 B CN114127965 B CN 114127965B
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absorber
wavelength range
optoelectronic device
semiconductor chip
encapsulation
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CN114127965A (en
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丹尼尔·里希特
布伦丹·霍兰
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1003—Carbocyclic compounds
    • C09K2211/1007—Non-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1018—Heterocyclic compounds
    • C09K2211/1025—Heterocyclic compounds characterised by ligands
    • C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/18—Metal complexes
    • C09K2211/188—Metal complexes of other metals not provided for in one of the previous groups

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Device Packages (AREA)

Abstract

An optoelectronic component (100) is proposed, comprising: -at least one radiation-emitting semiconductor chip (1) which emits electromagnetic radiation in a first wavelength range (5) during operation; -an absorber (2), wherein the absorber (2) is mainly transmissive for the emitted electromagnetic radiation of the first wavelength range (5), and-the absorber (2) absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of the visible light of the ambient light (6) under irradiation with the ambient light (6).

Description

Optoelectronic component
Technical Field
An optoelectronic device is presented.
Disclosure of Invention
The object to be achieved is to propose an optoelectronic component which enables better contrast perception.
The optoelectronic component can have at least one semiconductor chip which emits electromagnetic radiation in a specific wavelength range. For example, the optoelectronic device is a semiconductor laser device or a light emitting diode.
According to at least one embodiment, the optoelectronic component comprises at least one radiation-emitting semiconductor chip which emits electromagnetic radiation in a first wavelength range during operation. Radiation-emitting semiconductor chips, for example light-emitting diode chips and/or laser diode chips, have epitaxially grown semiconductor layer sequences, which have active regions that are provided for generating electromagnetic radiation. The radiation-emitting semiconductor chip can emit electromagnetic radiation in operation, for example, from the UV radiation, the wavelength range of visible light and/or the infrared range. At least two radiation-emitting semiconductor chips, which emit electromagnetic radiation in different wavelength ranges, can be introduced side by side into the optoelectronic component.
According to at least one embodiment, an optoelectronic device has an absorber. The absorber is, for example, designed to transmit electromagnetic radiation of a specific, predefinable wavelength range on the one hand and to absorb electromagnetic radiation of another specific, predefinable wavelength range on the other hand. The absorber is, for example, formed as a layer or in a layer, which partially surrounds and/or covers the semiconductor chip. For example, multiple absorbers may also be incorporated into an optoelectronic device.
According to at least one embodiment, the absorber is predominantly transmissive to the emitted electromagnetic radiation of the first wavelength. By predominantly transmissive is meant that a substantial part of the emitted electromagnetic radiation of the first wavelength range of the semiconductor chip is not absorbed, but is transmitted by the absorber.
According to at least one embodiment, the absorber absorbs at least 70% of the total radiation intensity of the visible spectrum of ambient light under irradiation with ambient light. Preferably, the absorber absorbs at least 80% of the total radiation intensity of the visible spectrum of ambient light under irradiation with ambient light. Ambient light is produced by the electromagnetic spectrum of light of multiple colors that are mixed into white light. The ambient light has a continuous or near continuous spectrum. Thus, the ambient light is not composed of two or three colors, in particular. The light of sunlight and/or incandescent lamps is understood here to be, for example, ambient light. The ambient light is preferably sunlight. The absorber appears especially black under irradiation with ambient light.
The absorber is designed to absorb a substantial portion of the light emitted by the ambient light that is not transmitted by the absorber. This results in that a part of the ambient light is absorbed by the absorber and is not reflected, for example, on a mirror covered by the absorber. Hereby a black impression is achieved, which can enable a better contrast perception.
Electromagnetic radiation in the wavelength range of the visible light of the ambient light is thereby advantageously prevented from being reflected by the reflecting components of the optoelectronic component, which leads to a reduced contrast ratio. The reflecting component of the optoelectronic component is covered by the absorber in a targeted manner, so that reflection of electromagnetic radiation in the wavelength range of the visible light of the ambient light is partially prevented.
According to at least one embodiment, the optoelectronic component comprises a radiation-emitting semiconductor chip which emits electromagnetic radiation of a first wavelength range in operation and comprises an absorber, wherein the absorber is predominantly transmissive for the emitted electromagnetic radiation of the first wavelength range and absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of the visible light of the ambient light under irradiation with ambient light.
One concept of the present optoelectronic devices is to introduce absorbers into the optoelectronic devices in order to advantageously suppress reflections of ambient light impinging on the optoelectronic devices. Thereby achieving improved contrast. Furthermore, the emitted electromagnetic radiation of the first wavelength range of the semiconductor chip is predominantly transmitted by the absorber. The radiation may then be reflected, for example. This increases the efficiency of the device.
According to at least one embodiment, the absorber absorbs at most 50% of the emitted radiation of the first wavelength range of the semiconductor chip. In operation, a portion of the emitted electromagnetic radiation of the first wavelength range of the semiconductor chip is reflected back in the direction of the semiconductor chip, for example on the radiation exit side of the optoelectronic component. Advantageously, electromagnetic radiation of the first wavelength range of the semiconductor chip is then absorbed by the absorber only up to 50% and the remaining part not absorbed can be reflected off the device.
According to at least one embodiment, the absorber absorbs at most 25% of the electromagnetic radiation of the emitted first wavelength range of the semiconductor chip. Due to the good transmissivity of the electromagnetic radiation of the first wavelength range of the semiconductor chip, the brightness loss with respect to the absorber, which absorbs light independently of the wavelength, is reduced.
According to at least one embodiment, the optoelectronic component has three semiconductor chips. The three semiconductor chips emit electromagnetic radiation in a first wavelength range, in a second wavelength range and in a third wavelength range during operation. The three wavelength ranges are respectively different from each other. For example, three different colors of light are emitted, such as red, green, and blue.
The absorber is predominantly transmissive for the emitted electromagnetic radiation of the semiconductor chip in the first wavelength range, in the second wavelength range and in the third wavelength range.
The first wavelength range is for example in the electromagnetic spectrum between 610 nm and 700 nm, preferably between 610 nm and 640 nm. The second wavelength range is, for example, between 490 and 560 nanometers, and the third wavelength range is, for example, between 430 and 490 nanometers in the electromagnetic spectrum of visible light. The wavelength range of a particular color preferably has a bandwidth of at least 10 nanometers and at most 25 nanometers.
According to at least one embodiment, the absorbent body has an absorbent material and a matrix material. The material that acts as an absorber is a material that allows electromagnetic radiation of the first wavelength range of the semiconductor chip to be predominantly transmitted and additionally absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of visible light of ambient light under irradiation with ambient light.
As the base material, for example, silicone, epoxy, or hybrid material is used. The matrix material has preferably at least 10% by weight and at most 70% by weight of the absorbent material. Particularly preferably, the matrix material has at least 30% by weight and at most 70% by weight of the absorbent material. The absorbent body is for example constructed as a layer. The layer has a thickness of at least 500 nanometers and at most 5 micrometers. Preferably, the layer has a thickness of at least 1 micron and at most 3 microns.
According to at least one embodiment, the absorbent body has at least two absorbent materials and a matrix material. The material that acts as an absorber is preferably different. In this way, the transparency to electromagnetic radiation of the wavelength range of the semiconductor chip can advantageously be set in a targeted manner. It is particularly preferred that the absorber has an absorbing material which is predominantly transmissive for the first wavelength range, the second wavelength range and the third wavelength range of the semiconductor chip.
According to at least one embodiment, the material that acts as an absorber is or includes a chromophore. Chromophore means any part of the pigment or dye that makes its color possible. Preferably, an organic chromophore is used as the absorbing material, which has pi conjugated double bonds. Examples of organic chromophores for use herein are:
long-chain conjugated double bonds, as in, for example, carotenes or chlorophyll,
An aromatic group linked to an azo group, as for example in the azo dye methyl orange,
Quinone systems, such as, for example, the triarylmethane dyes alizarin, fuchsin or phenolphthalein,
Nitro compounds such as, for example, aromatic nitrodyes picric acid.
Pi conjugated double bonds are double bonds having a sequence of double bonds, single bonds, double bonds, single bonds. Meso boundary structures are created by pi conjugated double bonds, which are responsible for absorption properties, color, etc.
According to at least one embodiment, the material that acts as an absorber is or includes an organic semiconductor. The organic semiconductor is a semiconductor based on an organic material. Organic semiconductors can be divided into two classes via molar mass standards. One is a pi conjugated molecule and the other is a pi conjugated polymer. Herein, as pi conjugated molecules, at least one of the following materials is used as the absorbing material:
Linear condensed ring systems, for example oligoacenes, such as anthracene, pentacene and derivatives thereof or benzothiophenes,
Two-dimensional fused ring systems, such as perylene, PTCDA and derivatives thereof, naphthalene derivatives and hexabenzodione (Hexabenzocoronen),
Metal complexes, such as phthalocyanines,
Dendrimers, such as 4,4' -tris (N, N-diphenyl-amino) triphenylamine (TDATA),
Heterocyclic oligomers, such as oligothiophenes, oligophenylenevinylenes).
Furthermore, heterocyclic polymers and hydrocarbon chains may be used as pi-conjugated polymers. Heterocyclic polymers are, for example, polythiophenes, polyparaphenylene, polypyrroles, polyanilines. Hydrocarbon chains are, for example, polyacetylene and polysulfide.
Here, the material that acts as an absorber also includes pi conjugated molecules and/or pi conjugated polymers.
Organic semiconductors have proven to be particularly advantageous here as absorbing materials, since they can absorb relatively narrow bandwidths and can furthermore be set in a targeted manner by adjusting the functional groups, for example by substituents of the basic structure. Furthermore, organic semiconductors exhibit high stability, which is advantageous in optoelectronic components due to the high temperatures.
According to one embodiment, the material that acts as an absorber has a ligand consisting of a porphyrin derivative. Porphyrin derivatives are organic chemical dyes having four pyrrole rings which are cyclic-linked to each other by four methines. For example, carbon atoms of the pyrrole ring are substituted. Substituents of the pyrrole ring are, for example, substituted and unsubstituted alkyl groups, substituted and unsubstituted aryl groups, substituted and unsubstituted alkenyl groups, substituted and unsubstituted cycloalkyl groups, substituted and unsubstituted heterocycloalkyl groups, substituted and unsubstituted heteroaryl groups. Each porphyrin derivative has pi conjugated double bonds. In particular, the porphyrin derivative is not an azaporphyrin. This means that the pyrrole ring is not linked via an imino group, R 1-N＝CH-R2.
According to at least one embodiment, the carbon atom of the methine group of the porphyrin derivative is substituted. For example, a benzene substituent or a substituted benzene substituent may be used herein as a substituent.
According to at least one embodiment, the porphyrin derivative has the general formula:
Wherein R is independently selected from the group consisting of: substituted and unsubstituted aryl substituents, substituted and unsubstituted alkyl substituents, substituted and unsubstituted alkenyl substituents, substituted and unsubstituted cycloalkyl substituents, substituted and unsubstituted heterocycloalkyl substituents, substituted and unsubstituted heteroaryl substituents, hydrogen, and combinations thereof, or wherein the C atom is unsaturated between two adjacent-CR 2-CR2 -s. That is, a double bond, such as-cr=cr-, is formed between two adjacent R's, such as-CR 2-CR2 -.
By varying the combination of the substituents R and the different absorbing materials, the transmissivity for the wavelength range of the electromagnetic radiation of the semiconductor chip can be set particularly precisely. For example, an electron withdrawing substituent is selected as substituent R. Thereby, a main transmissivity of electromagnetic radiation in the first wavelength range of red is achieved. Advantageously, the transmissivity of electromagnetic radiation in the wavelength range of the semiconductor chip is controlled by combining a plurality of porphyrin derivatives having different substituents R as an absorbing material.
Examples of porphyrin derivatives as materials having an absorption function are shown below:
X may be independently selected from a hydrogen atom or a halogen atom. In particular X is selected from the group: H. br, F, cl, I. Preferably, X is a hydrogen atom or a bromine atom. R 3 and R 13 may be independently selected from substituted or unsubstituted alkyl groups. For example, R 3 is propyl and R 13 shows, for example, 13C atoms arranged saturated or unsaturated.
According to at least one embodiment, the material that acts as an absorber is or includes a zinc complex. The nitrogen atom coordinates preferentially to the zinc ion. Porphyrin derivatives are preferably used as ligands. Here, the N atom of the pyrrole ring coordinates to the zinc ion. The zinc complex can be predominantly transmissive to electromagnetic radiation in the green wavelength range of the semiconductor chip. For example, by changing from zinc metal ion to other metal ion, the main transmittance is set for the wavelength range of visible light.
According to at least one embodiment, the material that acts as an absorber has a ligand consisting of a porphyrin derivative and zinc ions as the central metal.
As zinc complex, for example, one of the following complexes is used:
residues X, R 3 and R 13 are defined above. Preferably, the absorber has zinc complexes and porphyrin derivatives as the absorbing material.
According to at least one embodiment, the optoelectronic component has a reflective lead frame or carrier. The reflective lead frame is, for example, a solderable metal lead frame in the form of a frame or comb for machine-manufacturing semiconductor chips or other electronic components. The lead frame is preferably connected to the semiconductor chip via a bond wire. Preferably, the lead frame is applied to an insulating carrier or insulating housing. Then, the semiconductor chip is applied on the lead frame. The lead frame is made of metal and is reflective.
According to at least one embodiment, the semiconductor chip is embedded in the encapsulation. The encapsulation preferably has silicone, epoxy or hybrid material. The encapsulation preferably has the same material as the matrix material of the absorbent body. The semiconductor chip is preferably laterally surrounded by the encapsulation. Particularly preferably, the semiconductor chip is completely surrounded laterally by the encapsulation.
According to at least one embodiment, the semiconductor chip and the absorber are applied directly side by side on the leadframe or carrier such that the absorber is arranged between the encapsulation and the leadframe or carrier. This means that the absorber is arranged as a thin layer beside the semiconductor chip on the leadframe or carrier. Alternatively, the material acting as an absorber is arranged directly as particles on the leadframe or carrier.
According to at least one embodiment, the semiconductor chip is embedded in the encapsulation and the semiconductor chip and the absorber are applied directly side by side on the leadframe or carrier such that the absorber is arranged between the encapsulation and the leadframe or carrier.
According to at least one embodiment, the absorber is introduced into the encapsulation. The absorbent body is introduced into the encapsulation as a layer and/or the absorbent material of the absorbent body is introduced into the encapsulation in the form of particles. The matrix material and the encapsulation of the absorbent body preferably have the same material or the encapsulation forms a matrix material into which the material acting as absorption is introduced.
According to at least one embodiment, the encapsulation material surrounds the encapsulation and the semiconductor chip and the absorber is applied on the encapsulation such that the absorber is arranged between the encapsulation and the encapsulation material. The coating material is preferably a silicone, epoxy or hybrid material. The cover material has, for example, a material that is different from the encapsulation and/or from the matrix material of the absorbent body. The absorber is applied as a layer onto the encapsulation and/or the absorbent material is arranged as particles onto the encapsulation.
According to at least one embodiment, the absorbent body is applied on the encapsulation. The absorbent body is preferably applied as a layer to the encapsulation.
According to at least one embodiment, the absorber at least partially covers the semiconductor chip. That is to say that the absorber is applied at least partially as a layer and/or as particles to the semiconductor chip as an absorbing material. This is possible because the absorber has a high transmissivity to light emitted by the semiconductor chip during operation. Additionally, the sides of the semiconductor chip may be coated with an absorber without loss of brightness.
In the production of optoelectronic components, the absorber and/or the absorbing material is preferably sprayed onto the encapsulation, onto the leadframe, onto the carrier and/or into the encapsulation. Additionally or alternatively, the absorber can also be introduced into a housing which encloses the semiconductor chip and the encapsulation. Furthermore, the absorbent body may be incorporated in a coating material which is applied onto the encapsulation.
The absorber can also be incorporated into or onto all components, that is to say into the encapsulation, onto the leadframe, onto the carrier, into the housing and/or into the encapsulating material.
According to at least one embodiment, the coating material has scattering particles. The scattering particles are constituted in the form of nanoparticles. Preferably, the scattering particles are selected from the group consisting of: tiO 2、SiO2、ZrO2、Al2O3、BATiO3、SrTiO3, TCO (transparent conductive oxide), nb 2O5、HfO2, znO.
One concept of the current optoelectronic devices is to suppress the reflection of ambient light on the leadframe or carrier by adding an absorber. Thereby creating a very good contrast and black impression.
Furthermore, the absorber described here allows the emitted electromagnetic radiation of the semiconductor chip to be transmitted predominantly. This may enable a particularly efficient device with good contrast.
A good black impression is achieved in an optoelectronic component with a conventional absorber, however, the brightness is lost. Here, an absorber material is used which absorbs approximately completely the electromagnetic radiation of the visible light of the ambient light. However, conventional absorber materials likewise absorb electromagnetic radiation in the wavelength range of the semiconductor chip approximately completely and are largely opaque to electromagnetic radiation in the wavelength range of the semiconductor chip.
The optoelectronic devices described herein may be particularly advantageous for use as pixels in video screens, TV devices, monitors or other display devices.
Drawings
Further advantageous embodiments and improvements of the optoelectronic component emerge from the examples described below in connection with the figures.
The drawings show:
FIG. 1 illustrates a schematic cross-sectional view of an optoelectronic device according to one embodiment;
FIG. 2 shows the chemical structural formula of zinc complex;
FIGS. 3, 4 and 5 illustrate absorption spectra of materials that function as absorption in the wavelength range of 300 nanometers to 800 nanometers, respectively, according to one embodiment;
FIG. 6 illustrates a schematic cross-sectional view of an optoelectronic device in a housing having three semiconductor chips, according to one embodiment;
fig. 7, 8 and 9 respectively show schematic cross-sectional views of an optoelectronic device having an encapsulation, a leadframe and an encapsulation material, according to one embodiment.
Elements of the same, same type or functioning are provided with the same reference numerals in the figures. The figures and the dimensional relationships of the elements shown in the figures to one another are not considered to be to scale. Rather, the individual elements, in particular the layer thicknesses, may be shown exaggerated for better illustration and/or for better understanding.
Detailed Description
The optoelectronic component 100 according to the exemplary embodiment of fig. 1 has a semiconductor chip 1, which emits electromagnetic radiation in a first wavelength range 5 during operation, and an absorber 2. The absorber 2 is applied, for example, on the semiconductor chip 1 and/or is arranged next to the semiconductor chip 1. The absorbent body 2 has at least one absorbent material 3 and a matrix material. The material 3 that acts as an absorber is, for example, or comprises, for example, a chromophore and/or an organic semiconductor. The matrix material is for example an epoxy, silicone or hybrid material.
The absorber 2 is mainly transmissive for the emitted electromagnetic radiation of the first wavelength range 5. By predominantly transmissive is meant that at most 50% of the electromagnetic radiation of the first wavelength range 5 of the semiconductor chip 1 is absorbed. Preferably, at most 25% of the emitted electromagnetic radiation of the first wavelength range 5 of the semiconductor chip 1 is absorbed by the absorber 2.
Further, the absorber 2 appears black under irradiation with ambient light 6. The ambient light 6 is generated by an electromagnetic spectrum of colors that are mixed into white light. The ambient light 6 is understood to be, in particular, sunlight. The absorber 2 absorbs at least 70% of the radiation intensity of the visible light of the ambient light 6. That is to say, the absorber 2 is configured such that it absorbs a large part of the wavelength range of the visible light of the ambient light 6 under irradiation and transmits predominantly the electromagnetic radiation of the emitted first wavelength range 5 of the semiconductor chip 1. Further, the absorber 2 mainly transmits a wavelength range of the ambient light 6 corresponding to the wavelength range of the semiconductor chip 1.
The chemical formula shown in fig. 2 shows a zinc complex as the material 3 that acts as an absorber.
Zinc complexes have porphyrin ligands that primarily transmit a selected range of wavelengths through the use of different substituents. The different substituents are shown in solid or dashed lines. Thus, porphyrin derivatives are suitable as ligands for the material 3 which acts as an absorber, since the porphyrin derivatives have conjugated pi-electron systems and can thus be set arbitrarily by different substituents. If electron withdrawing substituents such as bromobenzene are used, the electromagnetic radiation in the first wavelength range of red is predominantly transmissive to optoelectronic device 100. In addition to zinc metal, other metals having an effect on the absorption spectrum may be used. Preferably, the absorbent body has at least two absorbent materials.
Fig. 3 shows, by way of example, two absorption spectra of a conventional absorption material 12 and the absorption spectra of the absorption material 3 described here or of the absorber 2 described here with at least two absorption materials 3. The absorption spectrum of an optoelectronic device 100 with a conventional absorption-acting material 12 is shown with dotted lines. The absorption spectrum of the optoelectronic device 100 according to the invention is shown with solid lines.
The conventional absorbing material 12 absorbs approximately the full range of wavelengths from 300 nanometers to 800 nanometers in visible light. The absorber 2 of the optoelectronic component 100 preferably has at least two different absorbing materials 3. The absorbent material 3 may have the same basic structure, for example porphyrin derivatives, in which the substituents are different. The absorption spectrum is set by using different substituents. In fig. 3 it is shown that the absorber 2 is mainly transmissive in the green, blue and red wavelength ranges.
Fig. 4 shows two absorption spectra of different absorbent materials 3. The upper part of fig. 4 shows the zinc complex as the absorbing material 3 and the lower part of fig. 4 shows the absorption spectrum of the porphyrin derivative ligand as the absorbing material 3. The zinc complexes and porphyrin derivative ligands have different substituents R. Different substituents R result in different absorption spectra. The absorption spectrum is shown in the figure as a dotted, solid, dashed, thin or thick line. As can be seen from fig. 4, the different absorbing materials 3 show different absorption of electromagnetic radiation in the wavelength range of visible light.
In fig. 5, the absorption is plotted against the wavelength λ as in fig. 3 and 4. Two absorbent materials 3 are used as the absorbent body 2. It can be seen that electromagnetic radiation in the blue, green and red wavelength ranges is almost completely transmitted. The other wavelength range of visible light is mostly absorbed by the absorbing material 3 of the absorber 2 of the optoelectronic component 100.
The optoelectronic component 100 of fig. 6 according to one embodiment has three semiconductor chips 1. In operation, the semiconductor chip 1 emits electromagnetic radiation in the first wavelength range 5, in the second wavelength range 13 and in the third wavelength range 14. The semiconductor chip 1 emitting electromagnetic radiation in the first wavelength range 5 is shown with solid lines. The semiconductor chip 1 emitting electromagnetic radiation in the second wavelength range 13 is shown with dotted lines and the semiconductor chip 1 emitting electromagnetic radiation in the third wavelength range 14 is shown with thick dashed lines. The optoelectronic component 100 is introduced into the housing 8 and the semiconductor chips 1 are embedded next to one another in the encapsulation 9. The absorbent body 2 is present on the encapsulation 9 and/or below the encapsulation 9 and/or in the encapsulation 9. The encapsulation 9 has, for example, silicone, epoxy or hybrid material as material. The encapsulation 9 may have the same material as the matrix material of the absorbent body 2.
The semiconductor chip 1 is applied to a reflective lead frame 7. Advantageously, the incident light of the ambient light 6 is mostly absorbed by the absorber 2 and is not reflected by the reflecting lead frame 7. The absorber 2 is furthermore designed for allowing the transmission of the emitted electromagnetic radiation predominantly in the first wavelength range 5, in the second wavelength range 13 and in the third wavelength range 14. Furthermore, the absorber 2 allows the wavelength range of the ambient light 6 corresponding to the wavelength range of the semiconductor chip 1 to be mainly transmitted. The emitted electromagnetic radiation of the semiconductor chip 1 is reflected on the radiation exit side 15 in the direction of the lead frame 7 and thus largely transmitted or reflected by the absorber 2 without being absorbed by the absorber 2.
The embodiment in fig. 7 shows a housing 8 in which the semiconductor chip 1 is embedded in an encapsulation 9. The encapsulation material 10 is present on the encapsulation 9 and on the semiconductor chip 1. The semiconductor chip 1 is applied to a reflective lead frame 7, which is connected to the semiconductor chip 1 via a bond wire 11. The absorber 2 is applied directly beside the semiconductor chip 1 on the lead frame 7 such that the absorber 2 is arranged between the encapsulation 9 and the lead frame 7. The absorber 2 is formed here as a layer.
The cover material 10 has a silicone, epoxy or hybrid material and may be different from the matrix material of the encapsulation 9 or the absorber 2. Furthermore, for example, scattering particles are also additionally embedded in the coating material 10. The scattering particles are constituted as nanoparticles and may be selected from the group: tiO 2、SiO2、ZrO2、Al2O3、BaTiO3、SrTiO3, TCO (transparent conductive oxide), nb 2O5、HfO2, znO.
The embodiment of fig. 8 differs from the embodiment of fig. 7 in that the absorption body 2 is embedded in the encapsulation 9 as particles or as a layer.
The embodiment of fig. 9 differs from the embodiments of fig. 8 and 7 in that the absorption body 2 is applied on the encapsulation 9 such that the absorption body 2 is arranged between the encapsulation 9 and the wrapping material 10. The absorber 2 may at least partially cover the semiconductor chip 1.
Features and embodiments described in connection with the figures may be combined with each other according to further embodiments even if not all combinations are explicitly described. Furthermore, the embodiments described in connection with the figures may alternatively or additionally have further features according to the description in the summary section.
The present invention is not limited thereto by the description according to the embodiment. Rather, the invention includes any novel feature and any combination of features, in particular any combination of features in the examples, even if said feature or said combination itself is not explicitly indicated in the examples.
The present application claims priority from German patent application 10 2019 118 793.1, the disclosure of which is incorporated herein by reference.
List of reference numerals
100. Optoelectronic component
1. Semiconductor chip
2. Absorbent body
3. Absorbent material
5. First wavelength range
6. Ambient light
7. Lead frame
8. Shell body
9. Encapsulation part
10. Cladding material
11. Bonding wire
12. Conventional absorbent materials
13. Second wavelength range
14. Third wavelength range
15. Radiation exit side

Claims (16)

1. An optoelectronic device (100) having:
-at least one radiation-emitting semiconductor chip (1) which emits electromagnetic radiation in a first wavelength range (5) during operation; and
-An absorber (2), wherein
-The absorber (2) is predominantly transmissive for the emitted electromagnetic radiation of the first wavelength range (5), and
-The absorber (2) absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of visible light of the ambient light (6) under irradiation with the ambient light (6),
The absorber (2) comprises an absorbent material (3) and a matrix material,
-The absorbent material (3) has a ligand consisting of a porphyrin derivative, and
-Said porphyrin derivative (12) has the following general formula:
Wherein R is independently selected from the group consisting of: substituted and unsubstituted aryl substituents, substituted and unsubstituted alkyl substituents, substituted and unsubstituted alkenyl substituents, substituted and unsubstituted cycloalkyl substituents, substituted and unsubstituted heterocycloalkyl substituents, substituted and unsubstituted heteroaryl substituents, hydrogen, and combinations thereof or therein
Between two adjacent-CR 2-CR2 -the C atom is unsaturated.
2. The optoelectronic device (100) according to claim 1,
Wherein the absorber (2) absorbs at most 50% of the emitted electromagnetic radiation of the first wavelength range (5) of the semiconductor chip (1).
3. An optoelectronic device (100) according to claim 1 or 2,
Wherein the absorber (2) absorbs at most 25% of the emitted electromagnetic radiation of the first wavelength range (5) of the semiconductor chip (1).
4. An optoelectronic device (100) according to claim 1 or 2,
Wherein the optoelectronic component (100) has three semiconductor chips (1) which emit electromagnetic radiation in the first wavelength range (5), in the second wavelength range (13) and in the third wavelength range (14) during operation, wherein the absorber (2) is predominantly transmissive for electromagnetic radiation in the first wavelength range (5), in the second wavelength range (13) and in the third wavelength range.
5. An optoelectronic device (100) according to claim 1 or 2,
Wherein the absorber (2) comprises at least two absorbent materials (3) and the matrix material.
6. An optoelectronic device (100) according to claim 1 or 2,
Wherein the material (3) acting as an absorber is or comprises an organic semiconductor.
7. An optoelectronic device (100) according to claim 1 or 2,
Wherein the absorption material (3) is or comprises a Zn complex.
8. An optoelectronic device (100) according to claim 1 or 2,
Wherein the absorption device (100) has a reflection lead frame (7).
9. The optoelectronic device (100) according to claim 8,
-Wherein the semiconductor chip (1) is embedded in an encapsulation (9), and
-The semiconductor chip (1) and the absorber (2) are applied directly side by side on the lead frame (7) such that the absorber (2) is arranged between the encapsulation (9) and the lead frame (7).
10. The optoelectronic device (100) according to claim 9,
Wherein the absorber (2) is introduced into the encapsulation (9).
11. The optoelectronic device (100) according to claim 9,
Wherein a coating material (10) surrounds the encapsulation (9) and the semiconductor chip (1), and
The absorber (2) is applied on the encapsulation (9) such that the absorber (2) is arranged between the encapsulation (9) and the wrapping material (10).
12. The optoelectronic device (100) according to claim 9,
Wherein the absorbent body (2) is applied on the encapsulation (9).
13. An optoelectronic device (100) according to claim 1 or 2,
Wherein the absorber (2) at least partially covers the semiconductor chip (1).
14. An optoelectronic device (100) according to claim 1 or 2,
Wherein the absorbent material (3) has a zinc complex.
15. An optoelectronic device (100) according to claim 1 or 2,
Wherein the material (3) having an absorption function has a ligand composed of a porphyrin derivative and has zinc ions as a central metal.
16. An optoelectronic device (100) according to claim 1 or 2,
Wherein the porphyrin derivative is selected from the following formulas:
Wherein X is independently selected from the group consisting of: H. f, br, cl, I, and R 3 and R 13 are independently selected from substituted and unsubstituted alkyl groups.
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