CN114124225B - Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film - Google Patents
Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film Download PDFInfo
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 230000003287 optical effect Effects 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000005253 cladding Methods 0.000 claims abstract description 26
- 238000005452 bending Methods 0.000 claims abstract description 6
- 230000007704 transition Effects 0.000 claims abstract description 3
- 238000010168 coupling process Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000013307 optical fiber Substances 0.000 description 7
- 230000010354 integration Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/27—Arrangements for networking
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
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- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The application provides a tunable integrated photo-generated microwave source chip and a tunable integrated photo-generated microwave source system based on a lithium niobate thin film, wherein the tunable integrated photo-generated microwave source chip and the tunable integrated photo-generated microwave source system comprise a substrate wafer, a lower cladding layer, the lithium niobate thin film and an upper cladding layer which are sequentially laminated from bottom to top; the lithium niobate thin film is provided with a lithium niobate optical waveguide; the lithium niobate optical waveguide comprises a mode spot transition waveguide, a first straight waveguide, a first bending waveguide, a second straight waveguide, a second bending waveguide, a third straight waveguide and an optical microcavity waveguide which are connected in sequence; a first metal electrode is arranged at a position on the upper cladding layer corresponding to the first straight waveguide; the first metal electrode, the mode spot-changing waveguide and the first straight waveguide together form a phase modulator; a second metal electrode is arranged on the upper cladding layer at a position corresponding to the optical microcavity waveguide; the second metal electrode, the third straight waveguide and the optical microcavity waveguide jointly form a high-Q micro resonator; and a detector connected with the output end of the high-Q micro resonator is also arranged on the lithium niobate thin film. The method is beneficial to realizing miniaturization and engineering of the photo-generated microwave source.
Description
Technical Field
The application relates to the technical field of photo-generated microwaves, in particular to a tunable integrated photo-generated microwave source chip and system based on a lithium niobate thin film.
Background
The photo-generated microwave technology is an optical technology for carrying microwave millimeter wave signals in optical signals and realizing the transmission of radio frequency signals in optical transmission media such as optical fibers, and in an optical carrier radio frequency system, the generation, conversion and modulation of the radio frequency signals are realized through the regulation and control of laser signals. The photo-generated microwave technology utilizes the advantages of low optical signal transmission loss, long transmission distance, interference resistance and the like in optical fiber communication, overcomes the defects of low upper frequency limit, large signal noise and the like of the traditional method for generating microwave and millimeter waves in an electrical mode, combines the advantages of microwave and optical fiber communication and becomes a research hot spot in the current optical fiber communication field.
The existing photo-generated microwave source system adopts more discrete components and has the characteristics of complex structure and larger volume. Therefore, the application provides a tunable integrated photo-generated microwave source chip and a tunable integrated photo-generated microwave source system based on a lithium niobate thin film.
Disclosure of Invention
The invention aims to solve the problems and provide a tunable integrated photo-generated microwave source chip and a tunable integrated photo-generated microwave source system based on a lithium niobate thin film.
In a first aspect, the present application provides a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film, including a substrate wafer, a lower cladding layer, a lithium niobate thin film and an upper cladding layer that are sequentially stacked from bottom to top; the lithium niobate thin film is provided with a lithium niobate optical waveguide; the lithium niobate optical waveguide comprises a mode spot transition waveguide, a first straight waveguide, a first bending waveguide, a second straight waveguide, a second bending waveguide, a third straight waveguide and an optical microcavity waveguide which are sequentially connected; a first metal electrode is arranged on the upper cladding layer at a position corresponding to the first straight waveguide; the first metal electrode, the spot-switching waveguide and the first straight waveguide together form a phase modulator; a second metal electrode is arranged on the upper cladding layer at a position corresponding to the optical microcavity waveguide; the second metal electrode, the third straight waveguide and the optical microcavity waveguide together form a high-Q micro resonator; and a detector connected with the output end of the high-Q micro resonator is also arranged on the lithium niobate thin film.
According to some embodiments of the present application, the first curved waveguide is in a circular arc shape, and the number of degrees of central angles subtended by the first curved waveguide is 90 °; the second curved waveguide is in a circular arc shape, and the degree of the central angle of the second curved waveguide is 90 degrees.
According to the technical solutions provided in some embodiments of the present application, the first metal electrode adopts a traveling wave electrode structure, which is used for high-speed phase tuning of the phase modulator.
According to some embodiments of the present application, the second metal electrode adopts a lumped electrode structure for center frequency tuning of the high Q micro resonator.
According to the technical solutions provided in some embodiments of the present application, the optical microcavity waveguide is in a micro-ring or micro-disk structure.
According to the technical scheme provided by some embodiments of the present application, the detector is an InGaAs high-speed detector, and the heterogeneous integration is performed by adopting an end-face coupling or flip-chip vertical coupling method.
According to some embodiments of the present disclosure, the second metal electrode is disposed on the third straight waveguide and/or the optical microcavity waveguide.
According to the technical scheme provided by certain embodiments of the application, the thickness of the lithium niobate thin film is 300-1000 nm.
According to some embodiments of the present application, the upper cladding layer and the lower cladding layer are silicon dioxide layers, respectively.
According to some embodiments of the present application, the substrate wafer is a surface polished silicon wafer.
In a second aspect, the present application provides a tunable integrated photo-generated microwave source system including the tunable integrated photo-generated microwave source chip based on a lithium niobate thin film, the tunable integrated photo-generated microwave source system further including: an electrical amplifier, a radio frequency coupler, and a light source; light emitted by the light source is emitted into the detector after passing through the phase modulator and the high-Q micro resonator, the detector converts an optical signal into a radio-frequency electric signal, and the radio-frequency electric signal is amplified by the electric amplifier and then is input into the radio-frequency coupler; the output end of the radio frequency coupler is used as the output end of the tunable integrated photo-generated microwave source system and is connected to the input end of the phase modulator.
Compared with the prior art, the beneficial effect of this application: the method integrates discrete optical elements (a phase modulator, a high Q micro resonator and a detector) on a chip level, replaces a long optical fiber and a radio frequency filter in a traditional photo-generated microwave source system by the high Q micro resonator, so that the volume is remarkably reduced, and the miniaturization and engineering of a photo-generated microwave source are facilitated; and the optical microcavity of the high-Q micro resonator adopts a lithium niobate thin film material, so that the function of electric tuning can be realized.
Drawings
Fig. 1 is a schematic structural diagram of a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film according to embodiment 1 of the present application;
fig. 2 is a schematic cross-sectional view of a lithium niobate optical waveguide of a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film provided in example 1 of the present application;
fig. 3 is a schematic structural diagram of a tunable integrated photo-generated microwave source chip (optical microcavity waveguide is a micro-ring structure) based on a lithium niobate thin film according to embodiment 1 of the present application;
fig. 4 is a schematic structural diagram of a tunable integrated photo-generated microwave source chip (optical microcavity waveguide is a micro-disc structure) based on a lithium niobate thin film according to embodiment 2 of the present application;
fig. 5 is a schematic structural diagram of a tunable integrated photo-generated microwave source system according to embodiment 3 of the present application.
The text labels in the figures are expressed as:
1. a base wafer; 2. a lower cladding layer; 3. a lithium niobate thin film; 4. lithium niobate optical waveguide; 4-1, a mode spot-switching waveguide; 4-2, a first straight waveguide; 4-3, a first curved waveguide; 4-4, a second straight waveguide; 4-5, a second curved waveguide; 4-6, a third straight waveguide; 4-7, an optical microcavity waveguide; 5. an upper cladding layer; 6. a phase modulator; 7. a high Q microresonator; 8. a detector; 9. a first metal electrode; 10. a second metal electrode; 11. an electrical amplifier; 12. a radio frequency coupler; 13. a light source.
Detailed Description
In order that those skilled in the art may better understand the technical solutions of the present application, the following detailed description of the present application is provided by way of example and illustration only, and should not be construed to limit the scope of the present application in any way.
Example 1
Referring to fig. 1 to 3, the present embodiment provides a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film, which includes a substrate wafer 1, a lower cladding layer 2, a lithium niobate thin film 3 and an upper cladding layer 5 that are sequentially stacked from bottom to top; wherein the base wafer 1 is a surface-polished silicon wafer, and the upper cladding layer 5 and the lower cladding layer 2 are silicon dioxide layers, respectively; the thickness of the lithium niobate thin film 3 is 300-1000 nm.
The lithium niobate thin film 3 is provided with a lithium niobate optical waveguide 4, namely the lithium niobate optical waveguide 4 is manufactured in the lithium niobate thin film 3 and is manufactured by adopting a dry etching process; as shown in fig. 3, the lithium niobate optical waveguide 4 includes a mode spot-switching waveguide 4-1, a first straight waveguide 4-2, a first curved waveguide 4-3, a second straight waveguide 4-4, a second curved waveguide 4-5, a third straight waveguide 4-6, and an optical microcavity waveguide 4-7, which are sequentially connected; a first metal electrode 9 is arranged on the upper cladding 5 at a position corresponding to the first straight waveguide 4-2, namely, the first metal electrode 9 is positioned on the upper surface of the upper cladding 5; the first metal electrode 9, the spot-switching waveguide 4-1 and the first straight waveguide 4-2 together form a phase modulator 6; a second metal electrode 10 is arranged on the upper cladding 5 at a position corresponding to the optical microcavity waveguide 4-7, namely, the second metal electrode 10 is positioned on the upper surface of the upper cladding 5; the second metal electrode 10, the third straight waveguide 4-6 and the optical microcavity waveguide 4-7 together form a high-Q micro resonator 7; in this embodiment, the optical microcavity waveguides 4-7 adopt a micro-ring structure; and a detector 8 connected with the output end of the high-Q micro resonator 7 is also arranged on the lithium niobate film 3.
Further, the first curved waveguide 4-3 is in a circular arc shape, and the number of degrees of the central angle subtended by the first curved waveguide is 90 degrees; the second curved waveguide 4-5 is circular arc-shaped, and subtends a central angle of 90 degrees.
Further, the first metal electrode 9 adopts a traveling wave electrode structure for high-speed phase tuning of the phase modulator 6; the second metal electrode 10 adopts a lumped electrode structure for center frequency tuning of the high Q microresonator 7.
Further, the detector 8 is an InGaAs high-speed detector, and is heterogeneous integrated by adopting an end-face coupling or flip-chip vertical coupling method. According to the flip-chip vertical coupling method, the detector is reversely arranged on the lithium niobate thin film waveguide by using the index matching adhesive, and light in the lithium niobate thin film waveguide can be coupled into the photosensitive layer of the detector in an evanescent wave coupling mode because the refractive index of the photosensitive region of the detector is larger than that of the lithium niobate thin film waveguide layer.
Optionally, the second metal electrode 10 is disposed on the third straight waveguide 4-6 and/or the optical microcavity waveguide 4-7.
In use, the light beam sequentially passes through the phase modulator 6, the high-Q microresonator 7 and the detector 8, specifically, the light beam sequentially passes through the mode spot-switching waveguide 4-1, the first straight waveguide 4-2, the first curved waveguide 4-3, the second straight waveguide 4-4, the second curved waveguide 4-5 and the third straight waveguide 4-6, enters the optical microcavity waveguide 4-7 of the micro-ring structure, and then enters the detector 8 through the output end of the optical microcavity waveguide 4-7.
The tunable integrated photo-generated microwave source chip based on the lithium niobate thin film provided by the embodiment integrates discrete optical elements on chip level, replaces long optical fibers and a radio frequency filter in a traditional photo-generated microwave source system by utilizing a high-Q micro resonator, remarkably reduces the volume and is beneficial to realizing miniaturization and engineering of the photo-generated microwave source; the optical microcavity of the high-Q micro resonator is made of a lithium niobate thin film material, so that the function of electric tuning can be realized; for realizing the electric tuning function, particularly, because the lithium niobate film has an electro-optical effect, the second metal electrode is arranged on the optical microcavity waveguide, and adopts a lumped electrode structure, the second metal electrode can be used for tuning the center frequency of the high-Q micro resonator, particularly, the refractive index of the lithium niobate film is changed by adjusting the voltage loaded on the second metal electrode, and further, the resonance wavelength is changed, so that the electric tuning function is realized.
Example 2
The present embodiment provides a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film, which is different from embodiment 1 in that: in the embodiment, the optical microcavity waveguide 4-7 adopts a micro-ring structure, and in the embodiment, the optical microcavity waveguide 4-7 adopts a micro-disk structure, as shown in fig. 4.
Example 3
Referring to fig. 5, the present embodiment provides a tunable integrated photo-generated microwave source system based on a lithium niobate thin film, which includes a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film as described in embodiment 1, and further includes an electrical amplifier 11, a radio frequency coupler 12, and a light source 13; wherein said light source 13 is arranged close to said phase modulator 6, in particular close to said spot-converting waveguide 4-1 of said phase modulator 6; the electrical amplifier 11 is a GaAs low-noise radio frequency amplifier, and the noise coefficient is less than or equal to 2; the radio frequency coupler 12 is a GaAs radio frequency coupler, and the coupling coefficient is between 15 and 20 dB.
When the tunable integrated photo-generated microwave source system based on the lithium niobate thin film is used, light emitted by the light source 13 enters the phase modulator 6 in the lithium niobate thin film chip through the mode spot conversion waveguide 4-1, then enters the optical microcavity waveguide 4-7 of the high-Q micro resonator 7 through the first straight waveguide 4-2, the first curved waveguide 4-3, the second straight waveguide 4-4, the second curved waveguide 4-5 and the third straight waveguide 4-6, and the optical signal output from the high-Q micro resonator 7 is converted into a radio-frequency electric signal by the detector 8, and the radio-frequency electric signal is amplified by the electric amplifier 11 and then enters the radio-frequency coupler 12; after passing through the radio frequency coupler 12, the microwave signal is divided into two paths, one path is input into the phase modulator 6 to form a loop, when the loop gain is more than 1, the microwave signal is oscillated, and finally, a stable microwave signal is oscillated and output through the other path of the radio frequency coupler 12.
The tunable integrated photo-generated microwave source system based on the lithium niobate thin film adopts a phase modulator to integrate a high Q micro resonator in series and to perform chip-level hybrid integration with an InGaAs type detector, replaces an intensity modulator, a long optical fiber and an electric radio frequency filter in the traditional photo-generated microwave source system by utilizing the photon filtering and time-delay functions of the high Q micro resonator, realizes the conversion from the phase modulator to the intensity modulation, and feeds back to the phase modulator through an electric amplifier and a radio frequency coupler to form an oscillation loop, thus forming the integrated photo-generated microwave source. If the gain of the oscillation loop is higher than the loss, a stable microwave resonance signal output is generated, and the resonance frequency is determined by the resonance frequency of the high Q micro-resonator. By controlling the voltage applied to the second metal electrode 10 on the high-Q microresonator 7, the high-Q microresonator resonant frequency is tunable, resulting in a tunable microwave signal generated by the photogenerated microwave source.
The tunable integrated photo-generated microwave source system based on the lithium niobate thin film provided by the invention adopts the lithium niobate thin film photon integration and isomerism integration technology, integrates a phase modulator, a high Q micro resonator and a detector in a single chip, overcomes the discrete device components in the traditional photo-generated microwave source, improves the system integration level and miniaturization, solves the problem of poor reliability of the long fiber photo-generated microwave source in the prior art, improves the miniaturization and engineering level of the photo-generated microwave source, and meets the development requirement of a microwave photon radar system.
Specific examples are set forth herein to illustrate the principles and embodiments of the present application, and the description of the examples above is only intended to assist in understanding the methods of the present application and their core ideas. The foregoing is merely a preferred embodiment of the present application, and it should be noted that, due to the limited nature of text, there is an objectively infinite number of specific structures, and that, to those skilled in the art, several improvements, modifications or changes can be made, and the above technical features can be combined in a suitable manner, without departing from the principles of the present invention; such modifications, variations and combinations, or the direct application of the concepts and aspects of the invention in other applications without modification, are intended to be within the scope of this application.
Claims (9)
1. The tunable integrated photo-generated microwave source chip based on the lithium niobate thin film is characterized by comprising a base wafer (1), a lower cladding layer (2), a lithium niobate thin film (3) and an upper cladding layer (5) which are sequentially laminated from bottom to top; the lithium niobate thin film (3) is provided with a lithium niobate optical waveguide (4); the lithium niobate optical waveguide (4) comprises a mode spot transition waveguide (4-1), a first straight waveguide (4-2), a first bending waveguide (4-3), a second straight waveguide (4-4), a second bending waveguide (4-5), a third straight waveguide (4-6) and an optical microcavity waveguide (4-7) which are connected in sequence; a first metal electrode (9) is arranged at a position corresponding to the first straight waveguide (4-2) on the upper cladding (5); the first metal electrode (9), the spot-switching waveguide (4-1) and the first straight waveguide (4-2) together form a phase modulator (6); a second metal electrode (10) is arranged at a position corresponding to the optical microcavity waveguide (4-7) on the upper cladding (5); the second metal electrode (10), the third straight waveguide (4-6) and the optical microcavity waveguide (4-7) together form a high-Q micro resonator (7); the lithium niobate thin film (3) is also provided with a detector (8) connected with the output end of the high Q micro resonator (7); the second metal electrode (10) adopts a lumped electrode structure for center frequency tuning of the high-Q microresonator (7).
2. The tunable integrated photo-generated microwave source chip based on lithium niobate thin film according to claim 1, wherein the first curved waveguide (4-3) is circular arc-shaped with a central angle degree of 90 °; the second curved waveguide (4-5) is arc-shaped, and the degree of the central angle subtended by the second curved waveguide is 90 degrees.
3. The tunable integrated photo-generated microwave source chip based on lithium niobate thin film according to claim 1, characterized in that the first metal electrode (9) adopts a traveling wave electrode structure for high-speed phase tuning of the phase modulator (6).
4. The tunable integrated photo-generated microwave source chip based on lithium niobate thin film according to claim 1, wherein the optical microcavity waveguide (4-7) is a micro-ring or micro-disc structure.
5. The tunable integrated photo-generated microwave source chip based on lithium niobate thin film according to claim 1, wherein the detector (8) is an InGaAs high-speed detector, which is heterogeneous integrated by adopting an end-face coupling or flip-chip vertical coupling method.
6. The tunable integrated photo-generated microwave source chip based on lithium niobate thin film according to claim 1, characterized in that the second metal electrode (10) is arranged on the third straight waveguide (4-6) and/or the optical microcavity waveguide (4-7).
7. The tunable integrated photo-generated microwave source chip based on lithium niobate thin film according to claim 1, characterized in that the thickness of the lithium niobate thin film (3) is 300-1000 nm.
8. The tunable integrated photo-generated microwave source chip based on lithium niobate thin film according to claim 1, characterized in that the upper cladding layer (5) and the lower cladding layer (2) are respectively silicon dioxide layers; the base wafer (1) is a surface polished silicon wafer.
9. A tunable integrated photo-generated microwave source system comprising a tunable integrated photo-generated microwave source chip based on a lithium niobate thin film according to any of claims 1-8, further comprising: an electrical amplifier (11), a radio frequency coupler (12) and a light source (13); light emitted by the light source (13) is emitted into the detector (8) after passing through the phase modulator (6) and the high-Q micro resonator (7), the detector (8) converts an optical signal into a radio-frequency electric signal, and the radio-frequency electric signal is amplified by the electric amplifier (11) and then is input into the radio-frequency coupler (12); the output end of the radio frequency coupler (12) is used as the output end of the tunable integrated photo-generated microwave source system and is connected to the input end of the phase modulator (6).
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108225297A (en) * | 2016-12-09 | 2018-06-29 | 黑龙江工业学院 | A kind of SiO 2 waveguide and the vertical coupled resonance type integrated optical gyroscope of LiNbO_3 film |
| CN111736370A (en) * | 2020-06-12 | 2020-10-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | Thin-film lithium niobate-based integrated chip and preparation method thereof |
| CN111897146A (en) * | 2020-09-15 | 2020-11-06 | 上海航天科工电器研究院有限公司 | Photonic crystal micro-ring modulator chip based on lithium niobate thin film |
Family Cites Families (1)
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| US11204535B2 (en) * | 2019-05-17 | 2021-12-21 | Shanghai Jiao Tong University | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108225297A (en) * | 2016-12-09 | 2018-06-29 | 黑龙江工业学院 | A kind of SiO 2 waveguide and the vertical coupled resonance type integrated optical gyroscope of LiNbO_3 film |
| CN111736370A (en) * | 2020-06-12 | 2020-10-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | Thin-film lithium niobate-based integrated chip and preparation method thereof |
| CN111897146A (en) * | 2020-09-15 | 2020-11-06 | 上海航天科工电器研究院有限公司 | Photonic crystal micro-ring modulator chip based on lithium niobate thin film |
Non-Patent Citations (1)
| Title |
|---|
| 郑伟等.《光电振荡器最新研究进展》.《光通信技术》,2021,全文. * |
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