CN114124020A - Broadband TC-SAW device and preparation method thereof - Google Patents
Broadband TC-SAW device and preparation method thereof Download PDFInfo
- Publication number
- CN114124020A CN114124020A CN202111434266.3A CN202111434266A CN114124020A CN 114124020 A CN114124020 A CN 114124020A CN 202111434266 A CN202111434266 A CN 202111434266A CN 114124020 A CN114124020 A CN 114124020A
- Authority
- CN
- China
- Prior art keywords
- saw device
- film layer
- layer
- broadband
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229910003460 diamond Inorganic materials 0.000 claims description 15
- 239000010432 diamond Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 14
- 238000010168 coupling process Methods 0.000 abstract description 14
- 238000005859 coupling reaction Methods 0.000 abstract description 14
- 229910052681 coesite Inorganic materials 0.000 description 13
- 229910052906 cristobalite Inorganic materials 0.000 description 13
- 229910052682 stishovite Inorganic materials 0.000 description 13
- 229910052905 tridymite Inorganic materials 0.000 description 13
- 239000002131 composite material Substances 0.000 description 7
- 229910003327 LiNbO3 Inorganic materials 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02653—Grooves or arrays buried in the substrate
- H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention belongs to the technical field of filters. Specifically, the invention provides a broadband TC-SAW device, which comprises a single crystal piezoelectric film layer, a temperature compensation layer, a high sound velocity film layer and a substrate layer which are sequentially stacked. The invention also provides a preparation method of the broadband TC-SAW device. The device has the advantages of large organic electric coupling coefficient, small temperature coefficient and higher Q value.
Description
Technical Field
The invention belongs to the technical field of filter devices, and particularly relates to a broadband TC-SAW device and a preparation method thereof.
Background
With the development of mobile communication technology and the congestion of frequency Band resources, a terminal communication frequency Band is developed from the traditional 2.7GHz to a higher frequency, and the newly-added frequency Band is mostly a wider broadband at present, for example, a Band42 frequency Band covers 3400 MHz-3600 MHz, and the 1dB relative bandwidth requirement reaches 6%; the Band41 frequency Band covers 2469 MHz-2690 MHz, and the relative bandwidth requirement of 1dB reaches 8%; the n79 frequency band covers 4400 MHz-5000 MHz, and the 1dB relative bandwidth requirement is nearly 13%; the n78 frequency band covers 3300 MHz-3800 MHz, and the 1dB relative bandwidth is closer to 14%; for the low frequency Band71, a wide frequency Band is also required: the frequency band covers 617MHz to 652MHz, and the relative bandwidth requirement of 1dB reaches 6 percent.
For the 5G communication base station end, the requirement of wider bandwidth is also put forward, if n260 requires the frequency band to cover 37 GHz-40 GHz, the 1dB relative bandwidth requirement reaches 8%; the n257 requires the frequency band to cover 26.5 GHz-29.5 GHz, and the 1dB relative bandwidth requirement reaches 11%; the n258 requires the frequency band to cover 24.25 GHz-27.5 GHz, and the 1dB relative bandwidth requirement reaches 12.5%.
In military communication equipment, due to the miniaturization of equipment and the transceiving of broadband signals, such as the miniaturization requirements of radio frequency front ends of military handsets, radio stations, navigation and the like and transceiving modules, the traditional LC filter and dielectric filter can realize low loss of broadband within the frequency range of 0.5-5 GHz, but the size is more than 10mm multiplied by 5mm, the size is large, and the miniaturization requirement cannot be met.
The traditional low-loss SAW filter is limited by an electromechanical coupling coefficient, and the relative bandwidth of the leaky surface wave low-loss filter on the lithium tantalate material is generally within 5%; the leaky surface wave low-loss filter on the 41-64 degree Y-cut lithium niobate material generally has a relative bandwidth within 11%; the bandwidth expansion of about 1 to 3 percent can be realized by an external matching mode.
The larger electromechanical coupling coefficient is selected on the premise of realizing the SAW large-bandwidth filter, the electromechanical coupling coefficient of the SH wave of the 0-90-degree Y-cut lithium niobate material reaches 20-35 percent, and the low-loss filter with the relative bandwidth of 10-30 percent can be realized. The lithium niobate material with the Y-cut of 0-90 degrees can be used for manufacturing a broadband low-loss filter, but the temperature coefficient of the lithium niobate material is usually above-80 ppm/DEG C, and can cause the temperature drift of 1.2 percent of the relative bandwidth within the full temperature range of-55 ℃ to +85 ℃, so that a composite material with large electromechanical coupling coefficient, small temperature coefficient and higher Q value needs to be searched.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a Temperature compensated surface acoustic wave filter (TC-SAW) with a wide band and a small Temperature coefficient, so as to solve the problem that the existing SAW filter can not meet the market demand.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows: a broadband TC-SAW device comprises a single crystal piezoelectric film layer, a temperature compensation layer, a high sound velocity film layer and a substrate layer which are sequentially stacked.
Wherein the single crystal piezoelectric thin film layer is made of lithium niobate or lithium tantalate. Different cut shapes can be provided according to different electromechanical coupling coefficient and temperature coefficient requirements. Further, the cutting shape of the lithium tantalate material is 0-60 degree Y-cut, and the cutting shape of the lithium niobate material is 0-90 degree Y-cut. Furthermore, the thickness of the single crystal piezoelectric film layer is 0.05-10 times of the wavelength. For the broadband filter, a piezoelectric thin film material with a large electromechanical coupling coefficient needs to be selected.
Wherein the temperature compensation layer is silicon dioxide grown by Physical Vapor Deposition (PVD) sputtering or Chemical Vapor Deposition (CVD). Further, the thickness of the temperature compensation layer is 0.1-10 times of the wavelength. Generally, the temperature coefficient is decreased as the thickness of silica is increased, but the electromechanical coupling coefficient and the Q value may be increased or decreased, in consideration of a combination of parameters such as the electromechanical coupling coefficient, the resonator Q value, and the temperature coefficient.
Wherein the high acoustic velocity thin film layer is made of Diamond (Diamond) or sapphire (sapphire). Because the surface waves they excite have a faster speed of sound. Further, the thickness of the high sound velocity film layer is 0.1-10 times of the wavelength.
Wherein the substrate layer is made of silicon or silicon carbide. And the like with good heat dissipation. The thickness is 50 times wavelength or more.
And further, the device also comprises an interdigital transducer, wherein the interdigital transducer is positioned between any two adjacent layers of the single crystal piezoelectric film layer, the temperature compensation layer, the high sound velocity film layer and the substrate layer.
In addition, the invention also provides a preparation method of the broadband TC-SAW device, which is characterized in that the single crystal piezoelectric film layer, the temperature compensation layer, the high sound velocity film layer and the substrate layer are sequentially laminated for preparation.
Compared with the prior art, the invention has the beneficial effects that:
1. the device has the advantages of large organic electric coupling coefficient, small temperature coefficient and higher Q value.
2. Compared with a common broadband filter, the temperature coefficient is smaller.
Drawings
FIG. 1 is a schematic structural diagram of a broadband TC-SAW device provided by the invention;
FIG. 2 is a diagram showing the influence of single crystal piezoelectric thin film layers made of lithium niobate materials with different cut angles on impedance characteristics of a broadband TC-SAW device provided by the invention;
FIG. 3 is a temperature coefficient variation with temperature compensation layer thickness rule of a broadband TC-SAW device provided by the invention;
FIG. 4 is a rule of electromechanical coupling coefficient of a broadband TC-SAW device provided by the invention varying with thickness of a temperature compensation layer;
FIG. 5 is a rule of BOED-Q value of a broadband TC-SAW device varying with thickness of a temperature compensation layer according to the present invention;
FIG. 6 is a typical impedance simulation result of a resonator with a thickness of 800nm for a broadband TC-SAW device provided by the invention;
FIG. 7 is a graph of vibration displacement at different locations of a finger of a broadband TC-SAW device having a characteristic frequency of 1877MHz in accordance with the present invention;
FIG. 8 is a graph of vibration displacement at different positions of a finger of 1922MHz characteristic frequency of a broadband TC-SAW device provided by the invention;
FIG. 9 is a graph of vibration displacement at different positions of a finger of 2916MHz characteristic frequency of a broadband TC-SAW device provided by the invention;
FIG. 10 is a graph of vibration displacement at different locations of a finger at 3105MHz characteristic frequency of a wideband TC-SAW device provided by the present invention;
FIG. 11 is a graph showing the impedance of a wide band TC-SAW device as a function of electrode thickness in accordance with the present invention;
FIG. 12 is a graph showing the BOED-Q value of a broadband TC-SAW device varying with the thickness of an electrode according to the present invention;
FIG. 13 is a YX-LiNbO broadband TC-SAW device provided by the invention3/SiO2Simulation diagram of broadband filter on/Diamond/Si structure.
Wherein: 1-a single crystal piezoelectric thin film layer; 2-a temperature compensation layer; 3-a high sound velocity film layer; 4-a substrate layer; 5-interdigital transducers.
Detailed Description
For a better understanding of the present invention, the following further illustrates the present invention with reference to the accompanying drawings and specific examples, but the present invention is not limited to the following examples.
Example 1:
the invention provides a method for preparing a LiNbO3/SiO2The wide-band TC-SAW device made of/Diamond/Si composite structure adopts LiNbO as a single crystal piezoelectric film layer3The thickness is 10 wavelengths, and the cutting angle is 10 degrees Y; the temperature compensation layer adopts SiO2The thickness is 10 wavelengths; the high sound velocity film layer adopts Diamond (Diamond) with the thickness of 10 wavelengths; the substrate layer is made of silicon and has the thickness of 50 wavelengths, and the interdigital transducer is arranged on the single crystal piezoelectric film layer.
Example 2:
the invention provides a method for preparing a LiNbO3/SiO2The wide-band TC-SAW device made of/Diamond/Si composite structure adopts LiNbO as a single crystal piezoelectric film layer3The thickness is 10 wavelengths, and the cutting angle is 15 degrees Y; the temperature compensation layer adopts SiO2The thickness is 10 wavelengths; the high sound velocity film layer adopts Diamond (Diamond) with the thickness of 10 wavelengths; the substrate layer is made of silicon and has the thickness of 50 wavelengths, and the interdigital transducer is arranged on the single crystal piezoelectric film layer.
Example 3:
the invention provides a method for preparing a LiNbO3/SiO2Broadband TC-SAW device made of/sapphire/Si composite structure, wherein single crystal piezoelectric film layer adopts LiNbO3The thickness is 5 wavelengths, and the cutting angle is 10 degrees Y; the temperature compensation layer adopts SiO2The thickness is 5 wavelengths; the high sound velocity thin film layer is made of sapphire (sapphire with thickness of 5 waves)Length; the substrate layer is made of silicon, the thickness of the substrate layer is 60 wavelengths, and the interdigital transducer is arranged on the single crystal piezoelectric film layer.
Example 4:
the invention provides a method for preparing a LiTaO3/SiO2Broadband TC-SAW device made of/sapphire/Si composite structure, wherein LiTaO is adopted as single crystal piezoelectric thin film layer3The thickness is 2 wavelengths, and the cutting angle is 10 degrees Y; the temperature compensation layer adopts SiO2The thickness is 6 wavelengths; the high sound velocity thin film layer is made of sapphire (sapphire with the thickness of 8 wavelengths; the substrate layer is made of silicon with the thickness of 60 wavelengths, and the interdigital transducer is arranged on the single crystal piezoelectric thin film layer.
Example 5:
in view of the process compatibility with IC and temperature coefficient, the invention provides LiNbO prepared in example 13/SiO2The wide-band TC-SAW device has a/Diamond/Si composite structure.
FIG. 2 calculates lithium niobate under different cut angles, respectively, and it can be seen that there is a clutter mode at the low end outside the band, when the cut angles are 10 ° and 15 ° Y-cut lithium niobate, the clutter excitation at the left side is weakest, and here, 10 ° Y-cut LiNbO is selected3/SiO2/Diamond/Si. To ensure the temperature coefficient, different SiO were first investigated2The change rule of temperature coefficient under the thickness is that LiNbO is cut at 10 degrees Y3The film is taken as an example, and the temperature coefficient, the electromechanical coupling coefficient and the Q value are shown in the attached figures 3-5 along with SiO2Thickness variation, wherein the diamond film thickness is 1 micron.
The thickness of the diamond film used in fig. 6 is 1 μm, and it can be seen that four characteristic modes of this structure exist at 1877MHz, 1922MHz, 2916MHz and 3105, and stress distributions in three directions were calculated using the multilayer FEM/BEM to determine the modes of the four modes, respectively (as shown in fig. 7 to 10).
It is calculated that where 1922MHz is SH wave, its electromechanical coupling coefficient is large, about 29.2%, and for the broadband low loss filter, it is to use the SH wave mode and suppress other modes.
Fig. 11 and 12 calculate the admittance characteristics and Bode-Q values of the resonators with different metal electrode thicknesses, and it can be seen that when the film thickness is about 8%, the Q value reaches the maximum, and the electromechanical coupling coefficient reaches 28.5%.
Using 10LiNbO3/SiO2The composite structure of/Diamond/Si is designed into a simple 4-order impedance element low-loss filter, and the simulation result is shown in fig. 13, and it can be seen that the 3dB relative bandwidth reaches 20% when the temperature coefficient is 40 ppm/deg.c. Therefore, the technology can realize a broadband TC-SAW filter, and the effectiveness of the method is fully proved. The broadband TC-SAW device is a broadband TC-SAW device.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. A broadband TC-SAW device is characterized by comprising a single crystal piezoelectric film layer, a temperature compensation layer, a high sound velocity film layer and a substrate layer which are sequentially stacked from top to bottom.
2. The wideband TC-SAW device according to claim 1, wherein: the single crystal piezoelectric film layer is made of lithium niobate or lithium tantalate.
3. The wideband TC-SAW device according to claim 2, wherein: the cutting type of the lithium tantalate material is 0-60 degree Y-cut, and the cutting type of the lithium niobate material is 0-90 degree Y-cut.
4. The wideband TC-SAW device according to claim 1, wherein: the temperature compensation layer is silicon dioxide grown by physical vapor deposition sputtering or chemical vapor deposition.
5. The wideband TC-SAW device according to claim 1, wherein: the high-speed sound velocity thin film layer is made of diamond or sapphire.
6. The wideband TC-SAW device according to claim 1, wherein: the thickness of the single crystal piezoelectric film layer is 0.05-10 times of the wavelength; the thickness of the temperature compensation layer is 0.1-10 times of the wavelength; the thickness of the high-sound-velocity film layer is 0.1-10 times of wavelength.
7. The wideband TC-SAW device according to claim 1, wherein: the substrate layer is made of silicon or silicon carbide.
8. A wideband TC-SAW device according to any one of claims 1-7, wherein: the piezoelectric ceramic chip further comprises an interdigital transducer, wherein the interdigital transducer is positioned between any two adjacent layers of the single crystal piezoelectric film layer, the temperature compensation layer, the high sound velocity film layer and the substrate layer.
9. A method for manufacturing a broadband TC-SAW device according to any one of claims 1 to 8, wherein said single crystal piezoelectric thin film layer, temperature compensation layer, high acoustic velocity thin film layer and substrate layer are sequentially laminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111434266.3A CN114124020A (en) | 2021-11-29 | 2021-11-29 | Broadband TC-SAW device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111434266.3A CN114124020A (en) | 2021-11-29 | 2021-11-29 | Broadband TC-SAW device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114124020A true CN114124020A (en) | 2022-03-01 |
Family
ID=80371271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111434266.3A Pending CN114124020A (en) | 2021-11-29 | 2021-11-29 | Broadband TC-SAW device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114124020A (en) |
-
2021
- 2021-11-29 CN CN202111434266.3A patent/CN114124020A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10454447B2 (en) | Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof | |
| US7688161B2 (en) | Acoustic wave device and filter using the same | |
| US10128814B2 (en) | Guided surface acoustic wave device providing spurious mode rejection | |
| US11177791B2 (en) | High quality factor transducers for surface acoustic wave devices | |
| US7659653B2 (en) | Acoustic wave device and filter | |
| KR101516653B1 (en) | Elastic surface wave filter device | |
| KR100804407B1 (en) | Boundary acoustic wave device manufacturing method | |
| RU2534372C2 (en) | Device and method of cascade connection of filters of different materials | |
| US20040246077A1 (en) | Filter circuit | |
| US20050127794A1 (en) | Surface acoustic wave device and manufacturing method thereof | |
| CN107404302B (en) | Composite Surface Acoustic Wave (SAW) device having an absorption layer for suppressing spurious signal response | |
| CN112088490A (en) | SAW device with composite substrate for ultra high frequencies | |
| WO2019206534A1 (en) | Saw resonator, rf filter, multiplexer and method of manufacturing a saw resonator | |
| CN112953436A (en) | SAW-BAW hybrid resonator | |
| WO2024077955A1 (en) | Surface acoustic wave filter having multiple transmission zero points, and signal processing circuit | |
| CN112929004A (en) | Acoustic wave resonator, filter, multiplexer and wafer | |
| CN110383685A (en) | Acoustic wave device, high-frequency front-end circuit and communication device | |
| KR20030003654A (en) | Surface acoustic wave device | |
| CN112655150B (en) | Elastic wave device, high-frequency front-end circuit, and communication device | |
| CN112468109A (en) | Heterogeneous layered piezoelectric substrate suitable for high-frequency and broadband surface acoustic wave device | |
| US20230104405A1 (en) | Acoustic wave device with multilayer piezoelectric substrate for reduced spurious signals | |
| CN114124020A (en) | Broadband TC-SAW device and preparation method thereof | |
| CN115664370A (en) | Plate wave filter with multiple transmission zeros and signal processing circuit | |
| CN114070257A (en) | Acoustic wave device, filter and multiplexer | |
| US12052011B2 (en) | High quality factor transducers for surface acoustic wave devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |