CN114122661A - Mirror power combining/distributing network - Google Patents
Mirror power combining/distributing network Download PDFInfo
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- CN114122661A CN114122661A CN202111343010.1A CN202111343010A CN114122661A CN 114122661 A CN114122661 A CN 114122661A CN 202111343010 A CN202111343010 A CN 202111343010A CN 114122661 A CN114122661 A CN 114122661A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
The mirror image power synthesis/distribution network comprises a similar double-ridge waveguide outer cavity, wherein the top surface of the similar double-ridge waveguide outer cavity is provided with an opening, and the opening is sealed by a cover plate; the cover plate is provided with an inner conductor, and a coaxial feeder on the inner conductor is connected with the connector I; an inner conductor impedance transformation section is coaxially arranged on the inner conductor and the coaxial feeder line; the bottom surface of the quasi-double ridge waveguide outer cavity is provided with a circular opening corresponding to the coaxial feeder; in the cavity of the quasi-double-ridge waveguide outer cavity, the bottom surface of the quasi-double-ridge waveguide outer cavity and a circular opening are coaxially provided with an annular step-shaped quasi-double-ridge waveguide lower conductor step; in the quasi-double-ridge waveguide outer cavity, a plurality of micro-strip cavity grooves are arranged around the circle center, and quasi-double-ridge waveguide short circuit transformation sections are also arranged in the quasi-double-ridge waveguide outer cavity and communicated with the micro-strip cavity grooves; the microwave medium substrate comprises an annular substrate short circuit transition section and microstrip lines uniformly distributed on the substrate short circuit transition section along the circumference, the microstrip lines are positioned in the microstrip cavity groove, a plurality of connectors II are uniformly arranged on the periphery of the circumference of the quasi-double-ridge waveguide outer cavity, and the connectors II are connected with the microstrip lines.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a 6-18 GHZ mirror image power synthesis/distribution network.
Background
Power amplifiers are important components of microwave electronic systems, and the performance of a power amplifier directly affects the tactical performance of the equipment. Generally, the power output capability of a single device is rapidly reduced along with the increase of the working frequency, and the power output capability needs to be improved in order to meet the requirements of electronic equipment. On one hand, the output power of a single solid-state device is increased, and the solid-state device can replace vacuum devices such as a traveling wave tube and the like, so that the characteristics of small volume, light weight, low cost, high reliability and the like are realized; on the other hand, the output power of vacuum devices such as a traveling wave tube, a klystron and the like is synthesized in a power mode by adopting a low-loss and high-power-capacity synthesis structure, and the high-power application of kilowatt and even megawatt level can be met. Therefore, the power synthesis technology is a research hotspot of the current system, and particularly, the super-large scale power synthesis technology is a current research hotspot.
After many years of development of power synthesis, many forms of classification have been developed, and the common classification methods are chip-based power synthesis; circuit type power synthesis; synthesizing space power; hybrid power combining, and the like.
Chip-level power synthesis: the power synthesis is performed at the chip level, and due to factors such as the process conditions and the volume of the chip, although the output power of a single chip has been developed from tens of milliwatts before to tens of watts after the development of the three-generation semiconductor technology, the system has a huge gap from the requirement of the system.
Circuit type power synthesis: the synthesis mode is flexible and various, has different implementation forms, has some technical difficulties in the application of high power and super-octave bandwidth, and the synthesized power can reach KW level or even MW level in a low frequency band.
And (3) spatial power synthesis: the amplitude synthesis is carried out by utilizing the principle of superposition of arrival phases of the spatial electromagnetic waves, and the synthesis mode has the main advantages that the number of synthesis paths is arbitrary, and the synthesis of ultrahigh power can be realized;
hybrid power synthesis: the power synthesis technology which comprehensively utilizes and develops chip-level synthesis, circuit-level synthesis and space synthesis is flexible and diverse, and comprehensively utilizes the advantages of various synthesis modes to realize the ultra-high power synthesis of the system.
The image power synthesis belongs to a combination of circuit synthesis and space power synthesis, and is particularly suitable for power synthesis with arbitrary path number, wide band and ultra wide band. The difficulty of the super-large scale synthesis technology is that based on the traditional binary synthesis, with the increase of the number of synthesis paths, each stage of synthesis introduces one-stage additional loss, which causes the rapid synthesis efficiency, especially when the ultra-wideband and the broadband are applied, because of the superposition effect of the multi-stage power synthesis network, some points in the band can be superposed or offset in phase, local loss deterioration occurs, which often brings about great loss, thereby causing the rapid reduction of output power and the deterioration of system efficiency, and the heat accumulation of the whole system further has serious influence on the reliability of the system.
The traditional 6-18 GHz mirror image power synthesis/distribution network is mainly characterized in that a coaxial line is subjected to impedance transformation, the radial size of the coaxial line is enlarged to realize synthesis of multiple chips, the structural form is extremely difficult to process, the coaxial line needs to be split into parts of synthetic paths along the length direction, and then all fan-shaped blocks are combined together, and the structure of the network has the following characteristics:
1) the processing is difficult, the requirement on materials is extremely high, and the price is high;
2) the circular structure needs to cling the radiator to the circular surface, completely carries out circumferential heat dissipation, has limited heat dissipation capacity and cannot realize the synthesis of higher power;
3) the integrated module can not be tested independently almost, and the later maintenance is difficult;
4) the requirement on the processing precision is high, and the characteristic of high processing precision of a printed circuit cannot be adopted.
Disclosure of Invention
The invention aims to provide a mirror power synthesis/distribution network, which solves the problems in the prior art.
The purpose of the invention is mainly realized by the following technical scheme:
the mirror image power synthesis/distribution network comprises a connector I, an inner conductor and a similar double-ridge waveguide outer cavity, wherein the similar double-ridge waveguide outer cavity is internally provided with a cavity, the top surface of the similar double-ridge waveguide outer cavity is provided with an opening, and the opening at the top of the similar double-ridge waveguide outer cavity is sealed by a cover plate; the cover plate is provided with an inner conductor, and a coaxial feeder on the inner conductor is connected with the connector I; an inner conductor impedance transformation section is coaxially arranged on the inner conductor and the coaxial feeder line; the bottom surface of the quasi-double ridge waveguide outer cavity is provided with a circular opening corresponding to the coaxial feeder; in the cavity of the quasi-double-ridge waveguide outer cavity, the bottom surface of the quasi-double-ridge waveguide outer cavity and a circular opening are coaxially provided with an annular step-shaped quasi-double-ridge waveguide lower conductor step; a plurality of micro-strip cavity grooves are uniformly arranged around the circle center in the quasi-double-ridge waveguide outer cavity, and a quasi-double-ridge waveguide short circuit transformation section is also arranged in the quasi-double-ridge waveguide outer cavity and is communicated with the micro-strip cavity grooves;
the microwave medium substrate comprises an annular substrate short-circuit transition section and microstrip lines uniformly distributed on the substrate short-circuit transition section along the circumference, the microstrip lines are positioned in the microstrip cavity groove, a plurality of connectors II are uniformly arranged on the periphery of the circumference of the quasi-double-ridge waveguide outer cavity, and the connectors II are connected with the microstrip lines in a one-to-one correspondence manner.
As a preferred technical scheme, the inner conductor impedance transformation section comprises at least two sections, and the adjacent two sections of the inner conductor impedance transformation sections form a reduced order from inside to outside.
As a preferred technical scheme, the lower conductor step of the quasi-double-ridge waveguide is at least two sections, and the lower conductor step of the adjacent two sections of quasi-double-ridge waveguides forms a step-up from inside to outside.
As a preferred technical scheme, an annular limiting wall is arranged between the quasi-double-ridge waveguide short circuit transformation section and the quasi-double-ridge waveguide lower conductor step, and the inner annular surface of the microwave medium substrate abuts against the annular limiting wall.
As a preferred technical scheme, a plurality of through holes are arranged on the quasi-double-ridge waveguide short circuit transformation section, and the front conductor of the microwave dielectric substrate is connected to the ridge of the quasi-double-ridge waveguide in a through hole mode to realize the transformation of the ridge waveguide. As a preferred technical scheme, two ridges are provided with substrate impedance transformation sections at the positions of the substrate short circuit transition sections, which are close to the microstrip lines.
Compared with the prior art, the invention has the following beneficial effects:
(1) ultra-wideband and octave work: the power synthesis network can realize the full-band coverage work of 6-18 GHz;
(2) ultra-low insertion loss: the coaxial structure and the double-ridge waveguide step transformation structure are adopted, so that the ultralow insertion loss is realized;
(3) convenient chip integration: the transition section directly converts the double-ridge waveguide step transformation structure into a microstrip line structure convenient for integration with a chip, and the microstrip line structure is directly integrated with the chip.
(4) The heat conducting surface is positioned on the bottom surface of the quasi-double ridge waveguide outer cavity, and the heat exchange surface is very well designed.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is an exploded view of the present invention;
FIG. 2 is a cross-sectional view of the present invention;
FIG. 3 is a schematic structural diagram of a microwave dielectric substrate;
FIG. 4 is a schematic structural diagram of a double-ridge-like waveguide external cavity;
FIG. 5 is a schematic structural view of a cover plate;
FIG. 6 is a radial simulation model of the present invention;
FIG. 7 shows the radial simulation results (insertion loss) of the present invention;
FIG. 8 is a simulation result of return loss of the common terminal according to the present invention;
wherein the reference numerals are as follows:
the structure comprises a 1-type double-ridge waveguide outer cavity, a 101-type double-ridge waveguide lower conductor step I, a 102-type double-ridge waveguide lower conductor step II, a 103-type double-ridge waveguide lower conductor step III, a 104-type double-ridge waveguide short-circuit transformation section, a 105-microstrip cavity groove, a 2-cover plate, a 3-microwave dielectric substrate, a 301-substrate short-circuit gradual change section, a 302-microstrip line, a 303-substrate impedance transformation section, a 4-coaxial connector I, a 5-coaxial connector II, a 6-inner conductor, a 601-inner conductor impedance transformation section I, a 602-inner conductor impedance transformation section II, a 603-inner conductor impedance transformation section III, a 7-coaxial feeder line and an 8-heat exchange flat plate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Examples
As shown in fig. 1, the mirror image power distribution/synthesis network comprises a coaxial connector I, a cover plate, an inner conductor and a double-ridge-like waveguide external cavity. The similar double-ridge waveguide outer cavity is internally provided with a cavity, the top surface of the similar double-ridge waveguide outer cavity is provided with a circular opening, and the cover plate seals the circular opening at the top of the similar double-ridge waveguide outer cavity.
A heat exchange flat plate is arranged between the bottom surface of the quasi-double-ridge waveguide outer cavity and the input end connector, and the bottom surface of the quasi-double-ridge waveguide outer cavity is a circular plane.
The bottom surface of the cover plate is provided with an integrally formed inner conductor, and a coaxial feeder is arranged at the circle center of the bottom surface of the inner conductor and is welded with a contact pin of the coaxial connector I. Specifically, the bottom surface of the quasi-double ridge waveguide outer cavity is provided with a circular opening, and the heat exchange flat plate is provided with an avoidance port. The contact pin of the coaxial connector I is connected with the coaxial feeder line through an avoidance port on the heat exchange flat plate and a circular opening of the quasi-double-ridge waveguide outer cavity.
As shown in fig. 5, annular steps of gradually decreasing steps are sequentially formed on the bottom surface of the inner conductor adjacent to the coaxial feeder from inside to outside, and are an inner conductor impedance transformation section I, an inner conductor impedance transformation section II, and an inner conductor impedance transformation section III, respectively. The inner conductor impedance transformation section I, the inner conductor impedance transformation section II and the inner conductor impedance transformation section III are all used for gradually changing the electromagnetic field coaxial structure into a field structure in a waveguide structure form.
As shown in fig. 4, in the cavity of the quasi-double-ridge waveguide outer cavity, a gradually-rising annular step-shaped quasi-double-ridge waveguide lower conductor step I, a quasi-double-ridge waveguide lower conductor step II and a quasi-double-ridge waveguide lower conductor step III are sequentially arranged at the circular opening on the bottom surface of the quasi-double-ridge waveguide outer cavity from inside to outside.
In this embodiment, the cavity is formed by matching the impedance transformation section of the inner conductor with the lower conductor step of the double-ridge-like waveguide of the external cavity of the double-ridge-like waveguide, as shown in fig. 2.
In the quasi-double-ridge waveguide outer cavity, a plurality of 50-ohm micro-strip cavity grooves are uniformly arranged around the circle center, and an annular quasi-double-ridge waveguide short-circuit transformation section is also arranged in the quasi-double-ridge waveguide outer cavity and is communicated with the 50-ohm micro-strip cavity grooves. An annular limiting wall is arranged between the quasi-double-ridge waveguide short circuit transformation section and the quasi-double-ridge waveguide lower conductor step III, and the inner annular surface of the microwave dielectric substrate is abutted against the annular limiting wall, so that the limitation of the microwave dielectric substrate is realized, and the contact short circuit is realized.
As a preferable mode, the quasi-double-ridge waveguide short-circuit transformation section adopts the microwave printed board technology, and the front conductor of the microwave medium substrate is connected to the ridge of the quasi-double-ridge waveguide in a through hole mode to realize the transformation of the ridge waveguide.
Specifically, as shown in fig. 3, the microwave dielectric substrate includes an annular substrate short-circuit transition section and 50 ohm microstrip lines uniformly distributed on the substrate short-circuit transition section along the circumference. The 50 ohm microstrip line is positioned in the 50 ohm microstrip cavity groove. The 50 ohm microstrip cavity slot serves as a shield. And a plurality of coaxial connectors II are uniformly arranged on the periphery of the outer cavity of the quasi-double-ridge waveguide, and the coaxial connectors II are correspondingly connected with the 50 ohm microstrip lines one by one. Two ridges are arranged at the position of the substrate short circuit transition section, which is close to the microstrip line, and a substrate impedance transformation section is arranged on the two ridges, so that the waveguide low impedance is transformed into the high impedance transformation of the microstrip line.
Simulation results of the invention are shown in fig. 6-8, and design results show that:
in the frequency band range of 6-18 GHz, the input return loss of the synthetic network is larger than 20dB, the insertion loss of the radial power divider is in the range of 11.9-12.2 dB, and is equivalent to the theoretical loss (0 log (16) ═ 12), and the design target is achieved.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only illustrative of the present invention and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and logical principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. The mirror image power synthesis/distribution network is characterized by comprising a connector I, an inner conductor and a similar double-ridge waveguide outer cavity, wherein the similar double-ridge waveguide outer cavity is internally provided with a cavity, the top surface of the similar double-ridge waveguide outer cavity is provided with an opening, and a cover plate seals the opening at the top of the similar double-ridge waveguide outer cavity; the cover plate is provided with an inner conductor, and a coaxial feeder on the inner conductor is connected with the connector I; an inner conductor impedance transformation section is coaxially arranged on the inner conductor and the coaxial feeder line; the bottom surface of the quasi-double ridge waveguide outer cavity is provided with a circular opening corresponding to the coaxial feeder; in the cavity of the quasi-double-ridge waveguide outer cavity, the bottom surface of the quasi-double-ridge waveguide outer cavity and a circular opening are coaxially provided with an annular step-shaped quasi-double-ridge waveguide lower conductor step; a plurality of micro-strip cavity grooves are uniformly arranged around the circle center in the quasi-double-ridge waveguide outer cavity, and a quasi-double-ridge waveguide short circuit transformation section is also arranged in the quasi-double-ridge waveguide outer cavity and is communicated with the micro-strip cavity grooves;
the microwave medium substrate comprises an annular substrate short-circuit transition section and microstrip lines uniformly distributed on the substrate short-circuit transition section along the circumference, the microstrip lines are positioned in the microstrip cavity groove, a plurality of connectors II are uniformly arranged on the periphery of the circumference of the quasi-double-ridge waveguide outer cavity, and the connectors II are connected with the microstrip lines in a one-to-one correspondence manner.
2. The image power combining/splitting network of claim 1, wherein the inner conductor impedance transformation section comprises at least two sections, and two adjacent sections of the inner conductor impedance transformation section are stepped from inside to outside.
3. The mirror power combining/distributing network of claim 1, wherein the lower conductor step of the double-ridge-like waveguide is at least two segments, and the lower conductor step of the two adjacent segments of the double-ridge-like waveguide forms a step-up from inside to outside.
4. A mirror power combining/distributing network according to claim 1, wherein an annular limiting wall is provided between the double-ridge-like waveguide short-circuit transforming section and the lower conductor step of the double-ridge-like waveguide, and an inner annular surface of the microwave dielectric substrate abuts against the annular limiting wall.
5. A mirror power combining/distributing network according to claim 1, wherein the double-ridge-like waveguide short-circuit transforming section is provided with a plurality of through holes, and the transition of the ridge waveguide is realized by connecting the front conductor of the microwave dielectric substrate to the ridge of the double-ridge-like waveguide by means of the through holes.
6. An image power combining/splitting network according to claim 1, wherein a substrate impedance transformation is provided at two ridges next to the microstrip line at the substrate short transition.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116169451A (en) * | 2023-04-03 | 2023-05-26 | 石家庄烽瓷电子技术有限公司 | Three-dimensional packaged miniaturized power divider |
| CN116632486A (en) * | 2023-07-05 | 2023-08-22 | 西南科技大学 | 2-way single-ridge-to-double-ridge waveguide power distribution synthesis structure with 180-degree port phase difference |
| CN116799465A (en) * | 2023-07-05 | 2023-09-22 | 西南科技大学 | Ultra-wideband square coaxial power distribution synthesis structure |
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2021
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116169451A (en) * | 2023-04-03 | 2023-05-26 | 石家庄烽瓷电子技术有限公司 | Three-dimensional packaged miniaturized power divider |
| CN116169451B (en) * | 2023-04-03 | 2024-05-07 | 石家庄烽瓷电子技术有限公司 | Three-dimensional packaged miniaturized power divider |
| CN116632486A (en) * | 2023-07-05 | 2023-08-22 | 西南科技大学 | 2-way single-ridge-to-double-ridge waveguide power distribution synthesis structure with 180-degree port phase difference |
| CN116799465A (en) * | 2023-07-05 | 2023-09-22 | 西南科技大学 | Ultra-wideband square coaxial power distribution synthesis structure |
| CN116799465B (en) * | 2023-07-05 | 2024-03-15 | 西南科技大学 | Ultra-wideband square coaxial power distribution synthesis structure |
| CN116632486B (en) * | 2023-07-05 | 2024-03-15 | 西南科技大学 | 2-way single-ridge-to-double-ridge waveguide power distribution synthesis structure with 180-degree port phase difference |
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