CN114112061A - Method and system for rapidly measuring temperature of welding head of transistor type welding power supply on line - Google Patents
Method and system for rapidly measuring temperature of welding head of transistor type welding power supply on line Download PDFInfo
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Abstract
The invention discloses a method and a system for quickly measuring the temperature of a welding head of a transistor type welding power supply on line, the system comprises an eyepiece aiming type optical lens, a photoelectric detector, an I/V conversion circuit, an amplification circuit, an AD acquisition card, a single chip microcomputer, an upper computer, an OLED display screen and a key, wherein the I/V conversion circuit performs I/V conversion on a weak current signal generated by the photoelectric detector arranged behind the eyepiece aiming type optical lens and then amplifies the weak current signal through the amplification circuit, the AD acquisition card and the single chip microcomputer perform analog quantity acquisition on an amplified voltage signal, the single chip microcomputer performs temperature calculation on the acquired voltage analog quantity and displays the voltage analog quantity in real time through the OLED display screen, the key connected with the single chip microcomputer can be used for parameter setting, and the upper computer is used for filtering and temperature calculation of the collected voltage value and displaying a temperature curve and peak temperature in real time. The invention can realize high-precision and rapid temperature measurement in the temperature range of 300-800 ℃.
Description
Technical Field
The invention belongs to the field of radiation temperature measurement, and relates to a method and a system for quickly measuring the instantaneous heat release of a tiny target on line based on a brightness temperature measurement method.
Background
Modern temperature measurement methods mainly include two types: contact and non-contact thermometry. Wherein the non-contact temperature measurement is mainly radiation temperature measurement. Along with the perfection of radiation temperature measurement theory and the continuous improvement of thermal radiation sensor performance, its temperature measurement precision constantly improves, and measuring speed also constantly accelerates, and the range of application is also wider and wider, has greatly compensatied that contact temperature measurement measuring speed is slow, to the measured object temperature field distribution produce the influence and can't carry out temperature measurement to very high temperature etc. not enough. For the temperature measurement of a welding head, at present, the welding condition of the whole area is almost researched at home and abroad in a theoretical simulation stage or by adopting an infrared imager. Therefore, the method of measuring the actual temperature is adopted, and the method for directly obtaining the temperature of the welding head has important significance and value for developing subsequent welding research and product screening.
Disclosure of Invention
The invention provides a rapid on-line temperature measuring system and method for a welding head of a transistor type welding power supply, aiming at solving the problems that the tip of the welding head of the transistor type welding power supply is small, the heat release time is short during working, and the temperature measurement is inconvenient to adopt other modes. The invention is suitable for temperature measurement of instantaneous heat release at the tip of the welding head with the diameter of 0.3mm, has simple structure and low cost of a measurement system, and can realize high-precision and rapid temperature measurement in a temperature range of 300-800 ℃.
The purpose of the invention is realized by the following technical scheme:
the utility model provides a quick on-line measuring system of transistor-type welding power bonding tool temperature, includes eyepiece aiming formula optical lens, photoelectric detector, I/V converting circuit and amplifier circuit, AD acquisition card, singlechip, host computer, OLED display screen, button, wherein:
the photoelectric detector is arranged behind the eyepiece aiming type optical lens;
the eyepiece aiming type optical lens is connected with the I/V conversion circuit and the amplifying circuit;
the upper computer is connected with the I/V conversion and amplification circuit through an AD acquisition card;
the single chip microcomputer is respectively connected with the I/V conversion circuit, the amplifying circuit, the OLED display screen and the keys;
the I/V conversion circuit is used for carrying out I/V conversion on a weak current signal generated by a photoelectric detector arranged behind an eyepiece aiming type optical lens and then amplifying the weak current signal through an amplifying circuit, an AD acquisition card and a single chip microcomputer are used for carrying out analog quantity acquisition on the amplified voltage signal, the single chip microcomputer is used for carrying out temperature calculation on the acquired voltage analog quantity and displaying the voltage analog quantity in real time through an OLED display screen, a key connected with the single chip microcomputer can be used for parameter setting, and an upper computer is used for filtering and temperature calculation on the acquired voltage value and displaying a temperature curve and peak temperature in real time.
A method for rapidly measuring the temperature of a welding head of a transistor type welding power supply on line by using the system comprises the following steps:
the method comprises the following steps: supplying power to the system, placing an eyepiece aiming type optical lens at a position 60mm away from a welding head, and aligning the eyepiece at a small hole at the tip end of the welding head;
step two: the photoelectric detector receives the energy of the instantaneous heat release of the welding head through the ocular aiming type optical lens and outputs a current signal;
step three: I/V conversion is carried out on weak current signals obtained by the photoelectric detector by using an I/V conversion circuit, then voltage signals are amplified by an amplifying circuit and are transmitted to an AD acquisition card and a singlechip;
step four: the AD acquisition card and the singlechip simultaneously carry out analog quantity acquisition on the amplified voltage signals and convert the voltage signals into digital quantity corresponding to the voltage signals;
step five: the single chip microcomputer calculates the temperature of the voltage value after AD conversion, displays the voltage value in real time through an OLED display screen, and sets parameters through keys; and the upper computer performs filtering and temperature calculation on the voltage value acquired by the AD acquisition card and displays a temperature curve and peak temperature in real time.
Compared with the prior art, the invention has the following advantages:
1. the temperature measurement target is small, and the temperature measurement can be carried out on the target with the minimum diameter of 0.3 mm.
2. The temperature measuring speed is high, the temperature measuring speed exceeds 2000 temperature points per second, the continuous ignition time of the transistor type welding power supply is between 100 microseconds and several milliseconds, and the temperature of a welding head can be continuously measured in real time.
3. The radiation temperature measurement method is not in contact with the measured object, and the normal welding work of the transistor type welding power supply is not influenced.
4. And an approximate Lambert body method is adopted to measure the temperature, so that the real temperature of the welding head is obtained, and the influence caused by emissivity in other methods is avoided.
Drawings
FIG. 1 is a diagram of the composition of a weld head temperature measurement system;
FIG. 2 is a schematic diagram of an eyepiece collimation type optical path structure;
FIG. 3 is a lens diagram;
FIG. 4 is a schematic diagram of an amplifier circuit;
FIG. 5 is a functional diagram of system software;
fig. 6 is a diagram of a spot welding head.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings, but not limited thereto, and any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention shall be covered by the protection scope of the present invention.
The invention provides a rapid on-line temperature measurement system for a welding head of a transistor type welding power supply, which comprises an eyepiece aiming type optical lens, a photoelectric detector, an I/V conversion circuit, an amplification circuit, an AD acquisition card, a single chip microcomputer, an upper computer, an OLED display screen and keys, wherein:
the photoelectric detector is arranged behind the eyepiece aiming type optical lens;
the eyepiece aiming type optical lens is connected with the I/V conversion circuit and the amplifying circuit;
the upper computer is connected with the I/V conversion circuit and the amplifying circuit through an AD acquisition card;
the single chip microcomputer is respectively connected with the I/V conversion circuit, the amplifying circuit, the OLED display screen and the keys;
the I/V conversion circuit is used for carrying out I/V conversion on a weak current signal generated by a photoelectric detector arranged behind an eyepiece aiming type optical lens and then amplifying the weak current signal through an amplifying circuit, an AD acquisition card and a single chip microcomputer are used for carrying out analog quantity acquisition on the amplified voltage signal, the single chip microcomputer is used for carrying out temperature calculation on the acquired voltage analog quantity and displaying the voltage analog quantity in real time through an OLED display screen, a key connected with the single chip microcomputer can be used for parameter setting, and an upper computer is used for filtering and temperature calculation on the acquired voltage value and displaying a temperature curve and peak temperature in real time.
A method for rapidly measuring the temperature of a welding head of a transistor type welding power supply on line by using the system comprises the following steps:
the method comprises the following steps: supplying power to the system, placing an eyepiece aiming type optical lens at a position 60mm away from a welding head, and aligning the eyepiece at a small hole at the tip end of the welding head;
step two: the photoelectric detector receives the energy of the instantaneous heat release of the welding head through the ocular aiming type optical lens and outputs a current signal; calculating the emissivity of the cavity black body of the small hole at the tip of the welding head, and regarding the emissivity as a black body
Thirdly, I/V conversion is carried out on weak current signals obtained by the photoelectric detector by using an I/V conversion circuit, then voltage signals are amplified by an amplifying circuit and are transmitted to an AD acquisition card and a singlechip;
step four: the AD acquisition card and the singlechip simultaneously carry out analog quantity acquisition on the amplified voltage signals and convert the voltage signals into digital quantity corresponding to the voltage signals;
fifthly, the single chip microcomputer calculates the temperature of the voltage value after AD conversion, displays the voltage value in real time through an OLED display screen, and sets parameters through keys; and the upper computer performs filtering and temperature calculation on the voltage value acquired by the AD acquisition card and displays a temperature curve and peak temperature in real time.
In the invention, the photoelectric detector is a G12183-010K type photoelectric detector of the Nippon Korea company.
In the invention, the eyepiece aiming type optical lens has eyepiece focusing and objective focusing functions, an optical filter with the central wavelength of 2290nm, the bandwidth of 30nm and the transmittance of more than 85 percent is arranged in the lens, an object to be measured is amplified by three times, and the lens is 10cm away from the tip of a welding head; the zinc selenide material lens with the bandwidth of 0.8-2.3 mu m and the transmittance of more than 95 percent is selected as the lens.
In the invention, the first stage of the I/V conversion circuit and the amplifying circuit adopts a chip AD820 packaged by SOIC, the second stage and the third stage adopt a chip OP27 packaged by SOIC, and other resistance and capacitance devices are 0805 packaged.
In the invention, the AD acquisition card is selected from a USB2892 type AD acquisition card of Beijing Altai company.
In the invention, the emissivity of the blackbody cavity is calculated for the small hole at the tip of the welding head by adopting an approximate Lambert body method, and the small hole is taken as a blackbody.
Example (b):
as shown in fig. 1, the system for rapidly measuring the temperature of the welding head of the transistor welding power supply provided by this embodiment includes an eyepiece aiming optical lens with microscopic amplification, a G12183-010K infrared detector of hamamatsu, an I/V conversion circuit and an amplification circuit, a USB2892 AD acquisition card (16 bits, acquisition speed 1MS/s) of beijing altai, a STM32F103ZET6 single chip microcomputer minimum system, a 0.96 inch 12864OLED display, a key and an upper computer, wherein:
the I/V conversion circuit and the amplifying circuit are connected with the optical lens, the AD acquisition card and the singlechip; the upper computer is connected with the AD acquisition card and comprises an AD acquisition card configuration, a data acquisition system and a temperature calculation system; the OLED display screen and the keys are connected with the single chip microcomputer.
The I/V conversion circuit and the amplifying circuit are powered by a +/-10V double power supply, the AD acquisition card is powered by +10V, and the singlechip is powered by + 5V. The I/V conversion circuit and the amplifying circuit carry out IV conversion, amplification and filtering on weak signals of the infrared detector arranged behind the eyepiece aiming type optical lens, the AD acquisition card and the single chip microcomputer carry out analog quantity acquisition on amplified voltage signals and convert the analog quantity signals into digital quantity corresponding to the amplified voltage signals, the single chip microcomputer carries out temperature calculation on the acquired voltage values and displays the voltage values in real time through an OLED screen, and a key connected with the single chip microcomputer can carry out parameter setting. And the upper computer performs filtering and temperature calculation on the acquired amplified voltage signal and displays a temperature curve and a peak temperature in real time.
The temperature measurement by using the welding head temperature measurement system of the transistor welding power supply comprises the following specific steps:
the method comprises the following steps: the AD acquisition card, the amplifying circuit and the STM32F103ZET6 type single chip microcomputer are powered by a +/-10V and +5V three-way output linear voltage stabilizing power supply.
Step two: the eyepiece aiming optical lens is placed 10cm from the welding head and aiming light is directed at the small hole above the tip of the welding head.
In this step, the eyepiece aiming type optical lens is provided with a narrow band filter with a center wavelength of 2290nm and a bandwidth of 30nm, and magnifies the target to be measured by three times, and the eyepiece aiming type optical lens is composed of a lens group, and the structure of the eyepiece aiming type optical lens is shown in fig. 2. In the system, the objective source is clearly imaged by adopting an eyepiece focusing and objective lens focusing mode, and the objective source is filled in the whole field of view to the maximum extent. As the target is 0.3mm and the minimum detection area of the detector is 1mm, a field lens is added to enlarge the visual field, the incident flux is increased, and the target source to be detected is enabled to fill the visual field of the whole detector. The working principle of the whole optical system is that the main objective lens converges the radiation energy of the target source on the reflector, and a small hole with the same size as the detector is reserved in the center of the reflector, so that the detector receives useful information to the maximum extent. Other information is received by human eyes through reflection of the reflector, and the human eyes observe through the ocular lens to carry out aiming, so that the system achieves the best measuring effect. Useful information passes through the field lens, light with useless wavelength is filtered by the optical filter, and final energy information is received by the detector. The specific design is as follows:
the infrared detector adopts a G12183-010K type detector of the Nippon Hamamatsu company, and the performance indexes are as follows:
the parameters were calculated as follows:
calculating target source parameters
Assuming that the target source is a black body, according to the Wien displacement law:
λmT＝b (1)；
in the formula, λmIs the peak wavelength; b is constant, b is 2898 μm · K.
The radiation temperature of the target source, T1260K, can be found.
According to stefan boltzmann's law:
M0(T)＝σT4 (2)；
in the formula, M0(T) is blackbody radiation emittance in W/m2(ii) a Sigma is Stefan-Boltzmann constant, and sigma is 5.6696 multiplied by 10-8W·m-2·K。
The radiation emittance M of the target source can be obtained0＝142900.78W/m2。
The radiation power of the target source is:
φ＝M0S＝142900.78×π×(0.15×10-3)2＝0.0101010609W (3)；
the target source is calculated according to a Lambert radiator, and the radiation intensity in a hemispherical surface is as follows:
second aperture calculation of optical system
Noise Equivalent Power (Noise Equivalent Power) is abbreviated as NEP and is defined as: the required incident infrared radiation power at a signal-to-noise ratio of 1. The noise equivalent power of the G12183-10K type detector at the peak wavelength is 1 × 10-12W/Hz1 /2The effective power of the noise at the peak wavelength can be obtained.
The frequency of the light wave with the wavelength of 2.3 μm is:
noise equivalent power:
the calculation formula of the signal-to-noise ratio is as follows:
in the formula, PSInputting power for the signal; pNIs the noise power.
According to the concept of noise equivalent power, the noise power can be obtained:
when the SNR is 10, the input power at this time can be obtained from equation (6): pS＝9.7658×10-5W。
The sphericity of the clear aperture of the incident system can be obtained according to the radiation intensity of the target source:
according to the definition of sphericity:
the clear aperture area S is 5.64925 × 10-4m2。
The radius of the clear aperture is:
S＝πR2 (10)；
since the radius R was 13.4097mm, the clear aperture radius R was 15 mm.
The physical diagram is shown in figure 3.
Step three: the output signal of the infrared detector is subjected to I/V conversion and amplification by an I/V conversion circuit and an amplification circuit, two-stage amplification and one-stage inversion are adopted, and the I/V conversion circuit and the amplification circuit are shown in FIG. 4. Because the detector selected by the system is a photodiode, the detector can output in the form of current after receiving an optical signal, and can also output in the form of voltage after being applied with a load. But the output in the form of current will have better linearity. So I/V conversion circuitry is required to convert the current signal to the voltage signal required by our subsequent signal acquisition processing section. Because the output signal of the detector is very small after the detector obtains energy from the target source, an amplifying circuit is added to facilitate the subsequent acquisition and processing of the signal. The voltage signal acquisition of two modes is carried out by adopting a USB2892 type AD acquisition card and an STM32F103ZET6 type singlechip of Beijing Altai company. And the processing result is displayed through the upper computer and the OLED display screen. And (4) adopting a standard cavity type black body radiation source to calibrate the temperature. The software functional diagram of the upper computer is shown in FIG. 5. The upper computer acquires analog quantity information by driving a data acquisition card. And when the upper computer obtains a plurality of groups of original analog quantity data, filtering processing is carried out, and interference caused by accidental factors is eliminated. And then substituting the more ideal data after filtering into a fitting equation obtained after calibration, finally performing true temperature calculation by combining the numerical value of the emissivity, and performing temperature curve display, data storage and the like.
In this step, the calibration is a piecewise fit using a least squares method. The fitting formula is:
y＝A1·exp(-x/t1)+y0 (11)；
wherein x is temperature in units; y is a voltage value in mV; a. the1And y0Is the parameter to be determined.
Step four: and measuring the true temperature of the welding head by adopting an approximate Lambert body method.
In this step, the bond head is physically as shown in fig. 6. The depth of the small hole in the welding head is 3.2mm, the diameter is 0.5mm, the emissivity of the welding head material is 0.55, and the cavity black body emissivity epsilon of the small hole is calculated by using a Gouffe calculation method0Computing. The calculation formula is as follows:
in the above formula:
in the above two formulae, A: the area of the small hole of the welding head; st: the inner surface area of the cavity; epsilon: the emissivity of the material at the wavelength of 2.3 mu m; r: the radius of the opening; l: the depth of the hole.
Finally solved to obtain epsilon0Is 0.98. The actual temperature of the welding head is obtained by measuring the temperature of the small hole of the approximate blackbody cavity, and the calculation formula is as follows:
in the formula, epsilon0: cavity black body emissivity, Ts: bright temperature, T: actual temperature, c2: second radiation constant, λ: wavelength, λc: a certain wavelength,. epsilon0(λ, T): the cavity blackbody incidence at temperature T at wavelength λ.
Claims (10)
1. The utility model provides a quick on-line measuring system of transistor-type welding power bonding tool temperature which characterized in that the system includes eyepiece aiming type optical lens, photoelectric detector, I/V converting circuit and amplifier circuit, AD acquisition card, singlechip, host computer, OLED display screen, button, wherein:
the photoelectric detector is arranged behind the eyepiece aiming type optical lens;
the eyepiece aiming type optical lens is connected with the I/V conversion circuit and the amplifying circuit;
the upper computer is connected with the I/V conversion and amplification circuit through an AD acquisition card;
the single chip microcomputer is respectively connected with the I/V conversion circuit, the amplifying circuit, the OLED display screen and the keys;
the I/V conversion circuit is used for carrying out I/V conversion on a weak current signal generated by a photoelectric detector arranged behind an eyepiece aiming type optical lens and then amplifying the weak current signal through an amplifying circuit, an AD acquisition card and a single chip microcomputer are used for carrying out analog quantity acquisition on the amplified voltage signal, the single chip microcomputer is used for carrying out temperature calculation on the acquired voltage analog quantity and displaying the voltage analog quantity in real time through an OLED display screen, a key connected with the single chip microcomputer can be used for parameter setting, and an upper computer is used for filtering and temperature calculation on the acquired voltage value and displaying a temperature curve and peak temperature in real time.
2. The system for rapid on-line measurement of the temperature of the welding head of the transistor welding power supply according to claim 1, wherein the photodetector is a G12183-010K type photodetector.
3. The system of claim 1, wherein the eyepiece aiming optical lens has eyepiece focusing and objective focusing functions, and an optical filter having a center wavelength of 2290nm, a bandwidth of 30nm, and a transmittance of greater than 85% is disposed in the lens.
4. The system for rapidly measuring the temperature of the welding head of the transistor type welding power supply in an online manner as claimed in claim 1 or 3, wherein the eyepiece aiming type optical lens is composed of a lens group, and the lens is a zinc selenide material lens with the bandwidth of 0.8-2.3 μm and the transmittance of more than 95%.
5. The system for rapidly measuring the bonding head temperature of the transistor type welding power supply according to claim 1, wherein the I/V conversion circuit and the amplifying circuit adopt a chip AD820 packaged by SOIC at the first stage, adopt a chip OP27 packaged by SOIC at the second stage and the third stage, and adopt 0805 packages as other resistance and capacitance devices.
6. The system for rapidly measuring the welding head temperature of the transistor type welding power supply according to claim 1, wherein the AD acquisition card is a USB2892 type AD acquisition card.
7. A method for rapid on-line measurement of the temperature of the horn of a transistor welding power supply using the system of any one of claims 1 to 6, characterized in that it comprises the steps of:
the method comprises the following steps: supplying power to the system, placing an eyepiece aiming type optical lens at a position 60mm away from a welding head, and aligning the eyepiece at a small hole at the tip end of the welding head;
step two: the photoelectric detector receives the energy of the instantaneous heat release of the welding head through the ocular aiming type optical lens and outputs a current signal;
thirdly, I/V conversion is carried out on weak current signals obtained by the photoelectric detector by using an I/V conversion circuit, then voltage signals are amplified by an amplifying circuit and are transmitted to an AD acquisition card and a singlechip;
step four: the AD acquisition card and the singlechip simultaneously carry out analog quantity acquisition on the amplified voltage signals and convert the voltage signals into digital quantity corresponding to the voltage signals;
fifthly, the single chip microcomputer calculates the temperature of the voltage value after AD conversion, displays the voltage value in real time through an OLED display screen, and sets parameters through keys; and the upper computer performs filtering and temperature calculation on the voltage value acquired by the AD acquisition card and displays a temperature curve and peak temperature in real time.
8. The method of claim 7 wherein the eyepiece aiming optical lens is located 10cm from the tip of the horn.
9. The method for rapidly measuring the temperature of the welding head of the transistor type welding power supply in an online manner according to claim 7, wherein in the upper computer and the single chip microcomputer, the temperature calculation formula is as follows:
in the formula, epsilon0: cavity black body emissivity, Ts: bright temperature, T: actual temperature, c2: second radiation constant, λ: wavelength, λc: a certain wavelength,. epsilon0(λ, T): the cavity blackbody incidence at temperature T at wavelength λ.
10. The method of claim 9, wherein calculating the cavity blackbody emissivity e0The calculation formula of (a) is as follows:
in the formula, A: the area of the small hole of the welding head; st: the inner surface area of the cavity; epsilon: the emissivity of the material at the wavelength of 2.3 mu m; r: the radius of the opening; l: the depth of the hole.
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