CN114078833A - 具有至少两个在基底上接触的功率半导体布置的功率模块 - Google Patents
具有至少两个在基底上接触的功率半导体布置的功率模块 Download PDFInfo
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Abstract
本发明涉及具有至少两个在基底上接触的功率半导体布置的功率模块,其中,该功率模块具有至少两个在基底(4)上接触的、布置在壳体(18)中的功率半导体布置(6、8)。为改进功率模块(2)的可靠性,提出功率半导体布置(6、8)分别具有至少一个半导体构件(10),其中,壳体(18)在相对置的侧(20、22)上具有功率接口(DCp、DCn、AC),其中,基底(4)具有从功率接口(DCp、DCn、AC)到功率半导体布置(6、8)的馈电线(24),其中,馈电线(24、28、30)布置在基底(4)上,使得实现对称的电流引导。
Description
技术领域
本发明涉及一种具有至少两个在基底上接触的、布置在壳体中的功率半导体布置的功率模块。
本发明还涉及一种具有至少一个这种功率模块的变流器。
此外,本发明涉及一种用于制造这种功率模块的方法。
背景技术
通常,在这种变流器中,通过壳体密封的功率模块(例如经由实心金属板)拧在散热器上。变流器例如是整流器、逆变器、变频器或直流变压器。这种功率模块的最大输出功率尤其通过壳体和于此相关的外部尺寸被限制。半导体构件和电流轨道关于结构空间的布置的优化能够尤其导致,使得例如半导体构件的并联在电和热方面非优化地布置,由此,半导体构件的功率损耗不对称地分布,并且半导体构件本身不同强度地发热。此外,能够发生相邻布置的半导体构件相互(尤其非常强烈地)加热,从而造成功率模块失效。
专利申请文件US 2016/172995 A1描述了一种功率半导体模块,功率半导体模块能够减小上部/下部支线之间电感的变化,并且减小通过电感的变化引起的电流的变化。功率半导体模块包括电路块(上部/下部支线)、第一和第二正电极端子、第一和第二负电极端子以及第一和第二交流电端子,其中,每个电路块通过自淬灭的半导体元件的串联配置。此外,存在将自放电的半导体元件与直流和交流端子连接的第一和第二布线图。功率半导体模块的轮廓具有基本上为四边形的表面。
发明内容
在这样的背景下,本发明的任务在于改进功率模块的可靠性。
根据本发明的任务通过功率模块实现,功率模块具有至少两个在基底上接触的、布置在壳体中的功率半导体布置,其中,功率半导体布置分别具有至少一个半导体构件,其中,壳体在相对置的侧上具有功率接口,其中,基底具有从功率接口到功率半导体布置的馈电线,其中,馈电线布置在基底上,使得实现对称的电流引导,其中,第一功率接口和第二功率接口布置在壳体的至少一个第一侧上,其中,第一功率半导体布置布置在第二功率半导体布置与壳体的第一侧上的功率接口之间,其中,布置在基底上的、连接第二功率接口与第二功率半导体布置的馈电线两侧地并且对称地延伸经过第一功率半导体布置。
根据本发明的任务还通过具有至少一个这种功率模块的变流器实现。
此外,根据本发明的任务通过一种用于制造这种功率模块的方法实现,其中,基底(尤其以材料结合而)与基板连接,其中,壳体与基板液体密封地连接,并且其中,产生功率接口与基底的连接。
在下面提及的关于功率模块的优点和优选的设计方案能够有意义地转移到变流器和方法上。
本发明基于以下考虑,即通过半导体构件的对称的驱控改进功率模块的可靠性。半导体构件是至少两个在基底上接触的功率半导体布置的部分。基底具有介电材料层,介电材料层具有(尤其双侧的)金属喷镀。介电材料层例如是25μm至400μm、尤其50μm至250μm厚,并且包括陶瓷材料(例如氮化铝或氧化铝)或有机材料(例如聚酰胺)。金属喷镀例如结构化地实施的并且由铜制造。半导体构件例如实施为晶体管、尤其绝缘栅双极晶体管(IGBT)、金属氧化物半导体场效应晶体管(MOSFET)或场效应晶体管或二极管。至少一个反并联二极管尤其被分配给至少一个晶体管。
功率半导体布置布置在(尤其共同的)壳体中。壳体在相对置的侧上具有功率接口,其中,基底具有从功率接口到功率半导体布置的馈电线。馈电线例如被实施为平面的,其中,实施为平面的馈电线是尤其基底的结构化的金属喷镀的部分。通过馈电线布置在基底上使得实现对称的电流引导的方法,实现了半导体构件的对称的驱控。对称的电流引导例如导致在并联的半导体构件上总负载的均匀分配,由此优化功率模块的寿命。
第一功率接口和第二功率接口布置在壳体的至少一个第一侧上,其中,第一功率半导体布置布置在第二功率半导体布置与壳体的第一侧上的功率接口之间。功率接口和功率半导体布置的这种布置是节省空间的并且能够(尤其关于并联连接的半导体构件之间的动态电流分布)实现布局的对称的结构和对称的电流引导,由此优化功率模块的寿命。
布置在基底上的、连接第二功率接口与第二功率半导体布置的馈电线双侧地并且对称地经过第一功率半导体延伸地布置。馈电线例如U形或V形地围绕第一功率半导体延伸布置。馈电线的这种对称的布置导致对称的电流引导,由此,相同地控制(尤其并联的)半导体构件。
这种均匀的控制导致功率模块的寿命的优化。
另外的实施方式提出,布置在基底上的馈电线基本上关于纵轴线轴对称地延伸地布置。馈电线的这种轴对称的布置导致(尤其并联的)半导体构件的均匀的控制。
另外的实施方式提出,壳体具有(尤其平行于纵轴线延伸的)突起部,其中,馈电线至少部分地布置在突起部的下方。特别地,壳体框架在壳体的突起部下方缩回,从而提供更大的、例如适用于更宽的馈电线的基底面积。此外,半导体构件能够以更远的间距彼此放置,这导致热传播和因此相关的改进的散热。通过改进的散热改进了功率模块的可靠性并且提高了功率模块的寿命。
另外的实施方式提出,突起部具有用于产生与功率半导体布置键合连接(Bondverbindung)的焊盘。通过突起部能够实现具有更少寄生特征的更短的键合连接,这导致功率模块的效率的提高。
另外的实施方式提出,突起部遮盖至少10%的基底表面。部分布置在突起部下方的基底通过这种突起部具有至少扩大了11%的面积,从而能够实现功率模块的更高的功率密度。
另外的实施方式提出,馈电线经由连接板与第二功率半导体布置连接。连接板实施为弯曲或折叠的金属板,金属板例如由铜制造并且以材料结合而与基底的金属喷镀连接。尤其与压接引线相比,这种连接板具有高的导电性能和低的损耗。
另外的实施方式提出,第一功率接口与第二功率接口实施为用于至少一个半桥的直流接口。根据经验,这种布线被证明特别有利。
另外的实施方式提出,第一功率半导体布置的半导体构件与基底的第一金属喷镀以材料结合而连接,并且其中,第二功率半导体布置的半导体构件与基底的第二金属喷镀以材料结合而连接,并且其中,第一金属喷镀为与第二金属喷镀隔离地布置。例如第一功率半导体布置的半导体构件与第二功率半导体布置的半导体构件相应地并联连接,从而例如实施为半桥的功率模块能够通过布局的简单的改变而容易地并且低成本地扩展。
另外的实施方式提出,基底包括两个彼此电隔离的基底部分,其中,第一功率半导体布置布置在第一基底部分上并且第二功率半导体布置布置在第二基底部分上。基底的分离导致热传播以及因此改进的散热。通过改进的散热改进了功率模块的可靠性并且提供了功率模块的寿命。
附图说明
下面,根据在附图中示出的实施例进一步描述和解释本发明。
附图示出:
图1示出功率模块的第一实施方式的示意性图示;
图2示出功率模块的第二实施方式的示意性图示;
图3示出功率模块的第三实施方式的示意性图示;和
图4示出功率模块的第三实施方式的三维截面。
下面解释的实施例是本发明优选的实施例。在实施例中实施方式所描述的部件分别表示本发明各个相互独立的待考虑的特征,特征还分别相互独立地改进本发明,并且因此也应单独或以除所示组合以外的组合视为本发明的组成部分。另外,所描述的实施方式也能够通过本发明的另外的已描述的特征来补充。
相同的附图表及在不同的附图中具有相同的含义。
具体实施方式
图1示出功率模块2的第一实施方式的示意性图示。功率模块2具有两个在基底4上接触的具有半导体构件10的功率半导体布置6、8。半导体构件10示例性地实施为晶体管T、尤其是绝缘栅双极晶体管(IGBTs)、金属氧化物半导体场效应晶体管(MOSFETs)或场效应晶体管或二极管D。功率半导体布置6、8例如分别具有三个晶体管T和三个二极管D。一个反并联二极管D尤其被分配给至少一个晶体管T。多个半导体构件10是可变的。例如第一功率半导体布置6能够具有两个晶体管T、两个(尤其反并联)二极管D,他们尤其棋盘形地布置,而两个功率半导体布置8具有两个晶体管T和两个(尤其反并联)二极管D时。
基底4包括两个彼此电绝缘的基底部分4a、4b,其中,第一功率半导体布置6布置在第一基底部分4a上,并且第二功率半导体布置8布置在第二基底部分4b上。基底4也能够构造为一件式的。基底4的基底部分4a、4b分别具有厚度为25μm至400μm之间、尤其50μm至250μm之间的介电材料层12,介电材料层包括陶瓷材料(例如氮化铝或氧化铝)或有机材料(例如聚酰胺)。此外,基底4的基底部分4a、4b分别具有(尤其结构化的)双侧的金属喷镀14,金属喷镀例如由铜制造。基底4的基底部分4a、4b以材料结合而与基板16连接,基板例如由铝或铝合金制成。通过焊接或烧结形成到基板16的材料结合的连接。
具有功率半导体布置6、8的基底4布置在壳体18中,壳体在功率模块2的相对置的面20、22上具有功率接口DCp、DCn、AC。例如在壳体18的第一侧20上布置有实施为直流功率接口的第一功率接口DCn和第二功率接口DCp,其中,第一功率半导体布置6布置在壳体18的第一侧20上、在第二功率半导体布置8与功率接口DCp、DCn之间。壳体18的第二侧22上布置有示例性地实施为交流功率接口的第三功率接口AC。功率模块2例如实施为半桥。
在基底4上布置有馈电线24,馈电线连接第二功率接口DCp与第二功率半导体布置8,双侧地并且对称地经过第一功率半导体布置6延伸地布置。布置在基底4上的馈电线24还实施为基本上关于纵轴线26轴对称地延伸,其中,实现对称的电流引导。对称的电流引导导致在并联的半导体构件10上总负载的均匀分配,由此,优化了功率模块2的寿命。连接第二功率接口DCp与第二功率半导体布置8的馈电线24经由连接板25与第二功率半导体布置(8)连接。这种连接板25例如由铜制造并且尤其与压接引线相比具有高的导电性能和低的损耗。
同样地,连接第一功率接口DCn与第一功率半导体布置6的馈电线28在连接第二功率接口DCp与第二功率半导体布置8的馈电线24之间居中地布置在基底4上,以实现对称的电流引导,这对功率模块2的寿命有积极作用。特别地,连接第一功率接口DCn与第一功率半导体布置6的馈电线28同样实施为基本上关于纵轴线26轴对称地延伸。此外,连接第三功率接口AC与第二功率半导体布置8的馈电线30实施为基本上关于纵轴线26轴对称地延伸,其中,实现对称的电流引导。连接第三功率接口AC与第二功率半导体布置8的馈电线30具有例如配置用于电流测量的分流器32,其中,分流器32同样基本上关于纵轴线26轴对称地布置。
图2示出功率模块2的第二实施方式的示意性图示,其中,第一功率半导体布置6被划分为三个基本上同样尺寸的、平行延伸并且关于纵轴线26轴对称布置的部分布置6a、6b、6c。部分布置6a、6b、6c例如分别具有带有反并联二极管D的晶体管T。连接第二功率接口DCp与第二功率半导体布置8的馈电线24在部分布置6a、6b、6c之间关于纵轴线26轴对称地布置,其中,实现对称的电流引导,由此得出最佳的热传播。图2中功率模块2的另外的实施方式对应图1中的实施方式。
图3示出功率模块2的第三实施方式的示意性图示,其中,示出了到半导体构件10和馈电线24、28、30的键合连接34。功率半导体布置6、8的半导体构件10布置在基底4上,使得载流的键合连接34基本上平行于纵轴线26延伸。
功率模块2的壳体18具有基本上平行于纵轴线26延伸的突起部36,其中,馈电线24至少部分地布置在突起部36的下方。突起部36例如遮盖至少10%的基底表面38。此外,突起部36具有用于产生与功率半导体布置6、8键合连接的焊盘40。图3中功率模块2的另外的实施方式对应图1中的实施方式。
图4示出功率模块2的第三实施方式的三维截面。因为壳体18的黏结表面不完全由壳体材料支撑,馈电线24部分位于壳体18的突起部36的下方。通过突起部获得结构空间,从而半导体构件10能够进一步分开地放置,由此,通过热传播带来改进的散热。通过附加的结构空间馈电线24能够被设计地更宽,这导致更高的导电性能。焊盘40与容纳在壳体18中的引脚42、尤其压配引脚或焊接引脚连接,经由焊盘形成到半导体构件10的键合连接34。为了清楚起见,在图4中没有示出另外的键合连接34。图4中功率模块2的另外的实施方式对应图3中的实施方式。
综上,本发明涉及一种功率模块2,功率模块具有至少两个在基底4上接触的、布置在壳体18中的功率半导体布置6、8。为改进功率模块2的可靠性提出,功率半导体布置6、8分别具有至少一个半导体构件10,其中,壳体18在相对置的侧20、22上具有功率接口DCp、DCn、AC,其中,基底4具有从功率接口DCp、DCn、AC到功率半导体布置6、8的馈电线24,其中,馈电线24、28、30布置在基底4上,使得实现对称的电流引导。
Claims (13)
1.一种功率模块(2),所述功率模块具有至少两个在基底(4)上接触的、布置在壳体(18)中的功率半导体布置(6、8),其中,所述功率半导体布置(6、8)分别具有至少一个半导体构件(10),其中,所述壳体(18)在相对置的侧(20、22)上具有功率接口(DCp、DCn、AC),其中,所述基底(4)具有从所述功率接口(DCp、DCn、AC)到所述功率半导体布置(6、8)的馈电线(24),其中,所述馈电线(24、28、30)布置在所述基底(4)上,使得实现对称的电流引导,其中,第一功率接口(DCn)和第二功率接口(DCp)布置在所述壳体(18)的至少一个第一侧(20)上,其中,第一功率半导体布置(6)布置在第二功率半导体布置(8)与所述壳体(18)的所述第一侧(20)上的功率接口(DCp、DCn)之间,其中,布置在所述基底(4)上的、连接所述第二功率接口(DCp)与所述第二功率半导体布置(8)的馈电线(24)双侧地并且对称地经过所述第一功率半导体布置(6)延伸地布置。
2.根据权利要求1所述的功率模块(2),其中,布置在所述基底(4)上的所述馈电线(24)布置为基本上关于纵轴线(26)轴对称地延伸。
3.根据权利要求1或2所述的功率模块(2),其中,所述壳体(18)具有尤其平行于纵轴线(26)延伸的突起部(36),其中,所述馈电线(24)布置为至少部分在所述突起部(36)的下方。
4.根据权利要求3所述的功率模块(2),其中,所述突起部(36)具有用于产生与功率半导体布置(6、8)键合连接(34)的焊盘(40)。
5.根据权利要求3或4所述的功率模块(2),其中,所述突起部(36)遮盖至少10%的基底表面(38)。
6.根据前述权利要求中任一项所述的功率模块(2),其中,所述馈电线(24)经由连接板(25)与所述第二功率半导体布置(8)连接。
7.根据前述权利要求中任一项所述的功率模块(2),其中,所述第一功率接口(DCn)和所述第二功率接口(DCp)实施为用于至少一个半桥的直流接口。
8.根据前述权利要求中任一项所述的功率模块(2),其中,所述第一功率半导体布置(6)的半导体构件(10)与所述基底(4)的第一金属喷镀(14a)以材料结合而连接,并且其中,所述第二功率半导体布置(8)的半导体构件(10)与所述基底(4)的第二金属喷镀(14b)以材料结合而连接,并且其中,所述第一金属喷镀(14a)布置为与所述第二金属喷镀(14b)隔离。
9.根据前述权利要求中任一项所述的功率模块(2),其中,所述基底(4)包括两个彼此电隔离的基底部分(4a、4b),其中,所述第一功率半导体布置(6)布置在第一基底部分(4a)上并且所述第二功率半导体布置(8)布置在第二基底部分(4b)上。
10.一种具有至少一个根据权利要求1至9中任一项所述的功率模块(2)的变流器。
11.一种用于制造根据权利要求1至9中任一项所述的功率模块(2)的方法,其中,基底(4)与基板(16)尤其以材料结合而连接,其中,壳体(18)与所述基板(16)液体密封地连接,并且其中,产生功率接口(DCp、DCn、AC)与所述基底(4)的连接。
12.根据权利要求11所述的方法,其中,所述功率接口(DCp、DCn、AC)分别经由键合连接(34)与所述基底(4)连接。
13.根据权利要求11或12所述的方法,其中,所述壳体(18)至少部分填充有浇铸材料。
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