CN114075687A - Electroplating carrier and electroplating method - Google Patents
Electroplating carrier and electroplating method Download PDFInfo
- Publication number
- CN114075687A CN114075687A CN202010849425.5A CN202010849425A CN114075687A CN 114075687 A CN114075687 A CN 114075687A CN 202010849425 A CN202010849425 A CN 202010849425A CN 114075687 A CN114075687 A CN 114075687A
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- Prior art keywords
- electroplating
- carrier
- bottom plate
- recess
- conductive
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- 238000009713 electroplating Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000003466 welding Methods 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 230000005611 electricity Effects 0.000 claims abstract description 3
- 239000003292 glue Substances 0.000 claims abstract description 3
- 238000007747 plating Methods 0.000 claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 238000013021 overheating Methods 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 25
- 230000008569 process Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000000565 sealant Substances 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012050 conventional carrier Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides an electroplating carrier and an electroplating method. Electroplating carrier includes positive pole bottom plate and wire loop, be provided with on the positive pole bottom plate and hold the recess, the circumference that holds the recess is provided with annular conducting layer, still be provided with the conductor wire on the positive pole bottom plate, the conductor wire is connected and the conductor wire extends to the direction of keeping away from and holding the recess with annular conducting layer electricity, the conductor wire ring inlays to be located and holds in the recess, and the wire welding on wire loop and the positive pole bottom plate, the welding point surface covering of wire loop and conductor wire has sealed glue, treat that the wafer of electroplating is located and hold the recess, and inlay the inboard of locating the wire loop. The electroplating carrier provided by the invention can effectively avoid scorching damage of the electroplating carrier caused by local overheating through the improved structural design, is beneficial to prolonging the service life of the electroplating carrier and reducing the production cost. The electroplating method using the electroplating carrier is beneficial to improving the electroplating quality and reducing the electroplating cost.
Description
Technical Field
The present invention relates to the field of semiconductor packaging, and more particularly, to an electroplating carrier and an electroplating method.
Background
The Wafer Level Packaging (WLP) technology is a process flow of cutting a wafer into individual independent finished chips after Packaging by using a whole wafer as a Packaging and testing object, which is greatly different from the conventional chip Packaging process. The size of the chip packaged by the WLP process can be reduced by more than 20% compared with the size of the chip packaged by the conventional process, and thus the WLP package has become the mainstream of the packaging market.
In the WLP packaging process, forming wafer bumps by an electroplating process to achieve electrical connection of devices is a crucial process, and the quality of the process is directly related to the electrical performance of the final product. In the conventional electroplating process of wafer bumps, a wafer to be electroplated is placed in an anode hanger and then is immersed in an electroplating solution together with the anode hanger. Specifically, the positive pole hanger includes electrically conductive bottom plate and wire loop, is provided with on the electrically conductive bottom plate and holds the recess, and the recess surface is provided with the conducting layer, is provided with many conductor wires along the circumference of recess. And fixing the conductive wire ring on the conductive bottom plate by using metal screws at six conductive parts of the conductive wire ring. Because ordinary electroplated metal screw can conduct heat, causes the fixed screw hole to damage, uses a period of back, and the screw can retreat, leads to conductive wire ring and conductive bottom plate contact failure, causes to generate heat and high temperature in the twinkling of an eye, leads to the anode hanger local scorching and leads to scrapping of whole anode hanger, and the scorching position is shown as the circle mark department of figure 1. Therefore, the anode hanger in the prior art has a short service life, which leads to an increase in production cost. In addition, if scorching occurs during the plating process, the scorched and melted particles may fall into the plating solution, causing contamination of the plating solution and contamination of the wafer, resulting in a decrease in plating quality.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide an electroplating carrier and an electroplating method, for solving the problems of the existing electroplating carrier, in which six conductive portions of a conductive wire loop fix the conductive wire loop on a conductive base plate through metal screws, the metal screws conduct heat to damage fixing threaded holes, and after a period of use, the screws retreat to cause poor contact between the conductive wire loop and the conductive base plate, instant heating and high temperature, resulting in partial burning of the anode carrier and scrapping of the whole anode hanger, resulting in reduction of service life of the anode hanger and increase of production cost.
In order to achieve the above and other related objects, the present invention provides an electroplating carrier, which includes an anode base plate and a conductive wire ring, wherein the anode base plate is provided with a receiving groove, the receiving groove is circumferentially provided with an annular conductive layer, the anode base plate is further provided with a conductive wire, the conductive wire is electrically connected to the annular conductive layer and extends in a direction away from the receiving groove, the conductive wire ring is embedded in the receiving groove and is welded to the conductive wire on the anode base plate, the surfaces of the conductive wire ring and the conductive wire are covered with a sealant, and a wafer to be electroplated is located in the receiving groove and is embedded inside the conductive wire ring.
Optionally, the number of the welding points of the conductive wire ring and the conductive wire is 6, and the 6 welding points are uniformly distributed at intervals along the circumferential direction of the conductive wire ring.
Optionally, the number of the conductive wires is 6, the number of the electrical connection points between the conductive wires and the annular conductive layer is 6, and the electrical connection points correspond to the welding points one to one.
Optionally, be provided with 6 evenly spaced apart's draw-in grooves on the positive pole bottom plate, the draw-in groove be located hold the circumference of recess and with hold the recess and be linked together, the wire loop includes ring body and 6 lugs along the even spaced apart distribution of ring body circumference, the lug one-to-one is located in the draw-in groove, the welding point corresponds to and is located on the lug.
Optionally, a conductive sheet is further disposed on the anode base plate and located at the periphery of the accommodating groove, and the conductive wire is electrically connected to the conductive sheet.
Optionally, a plurality of screw holes are uniformly distributed on the anode bottom plate along the circumferential direction, and the cover plate is fixed to the anode bottom plate through screws penetrating through the screw holes.
Optionally, the conductive wire ring is a titanium ring.
Optionally, the conductive line and the annular conductive layer are both electroplated metal material layers.
The invention also provides an electroplating method, wherein the electroplating carrier in any scheme is adopted to fix a wafer to be electroplated.
As described above, the electroplating carrier of the present invention has an improved structural design, the conductive wire ring is welded to the conductive wire on the anode base plate, and the welding point is sealed by the sealant for protection, so as to effectively avoid scorching damage of the electroplating carrier due to local overheating, which is helpful for prolonging the service life of the electroplating carrier and reducing the production cost. The electroplating method using the electroplating carrier is beneficial to improving the electroplating quality and reducing the electroplating cost.
Drawings
Fig. 1 is a schematic view showing a burnt position of an anode hanger in the prior art.
FIG. 2 is a schematic view of an anode base plate of an electroplating carrier according to the present invention.
Fig. 3 is a schematic structural view of a conductive wire ring of the electroplating carrier according to the present invention.
Description of the element reference numerals
1 anode base plate
11 accommodating groove
12 annular conductive layer
13 conductive wire
14 conductive sheet
15 screw hole
16 electrical connection points
17 conductive strip
2 conductive wire ring
21 ring body
22 bump
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to fig. 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
As shown in fig. 2 and fig. 3, the present invention provides an electroplating carrier, which includes an anode base plate 1 and a conductive wire ring 2, wherein the anode base plate 1 is provided with a receiving groove 11, the size and dimension of the receiving groove 11 are matched with the size and dimension of a wafer to be electroplated, an annular conductive layer 12 is arranged in the circumferential direction of the receiving groove 11, the anode base plate 1 is further provided with a conductive wire 13, the conductive wire 13 is electrically connected with the annular conductive layer 12, the conductive wire 13 extends in a direction away from the receiving groove 11, the conductive wire ring 2 is embedded in the receiving groove 11, the conductive wire ring 2 is welded to the conductive wire 13 on the anode base plate 1, the surfaces of the welding points of the conductive wire ring 2 and the conductive wire 13 are covered with a sealant, the wafer to be electroplated is located in the receiving groove 11 and is embedded inside the conductive wire ring 2, the wafer is electrically connected with an external power supply through the conductive wire ring 2 and the conductive wire 13. The electroplating carrier is characterized in that the anode base plate is provided with a conductive wire ring, the conductive wire ring is arranged on the anode base plate, and the conductive wire ring is arranged on the anode base plate.
The annular conductive layer 12 is, as the name implies, a ring shape having a hollow inside (the hollow position corresponds to the accommodation area of the accommodation groove 11), and is disposed in the circumferential direction of the accommodation groove 11. To ensure electrical connection, for example, a plurality of radially-distributed conductive strips 17 are formed on the outer periphery of the annular conductive layer 12, and the annular conductive layer 12 and the conductive wires 13 are electrically connected through the conductive strips 17. As an example, the conductive wires 13 and the annular conductive layer 12 are both made of plated metal material layers, that is, the conductive wires 13 and the annular conductive layer 12 (including the conductive strips 17) are formed on the plate body of the anode base plate 1 by a plating process, which helps to enhance the stability of the whole structure, and simultaneously can prevent scratches from being left on the wafer due to collision friction between the structures and the wafer to be plated. The specific materials of the conductive line 13 and the annular conductive layer 12 may vary depending on the plating solution, and it is necessary to ensure that the conductive line does not undergo a substitution reaction with metal ions in the plating solution and is not corroded by the plating solution.
The sealant can be but not limited to heat dissipation silica gel, can reduce contact thermal resistance while playing a role in sealing, enhances the heat transfer of a contact interface, and avoids forming local hot spots.
As an example, a plurality of clamping grooves are provided on the anode base plate 1, which are uniformly spaced apart, for example, 6 clamping grooves are located in the circumferential direction of the receiving groove 11 (located outside the receiving groove 11 in the circumferential direction) and are communicated with the receiving groove 11, the conductive wire ring 2 includes a ring body 21 and a plurality of projections 22, for example, also 6 projections, which are uniformly spaced apart in the circumferential direction of the ring body 21, the projections 22 are located in the clamping grooves in a one-to-one correspondence, and the welding points are correspondingly located on the projections 22, so that correspondingly, the number of welding points of the conductive wire ring 2 and the conductive wire 13 is 6, and the 6 welding points are uniformly spaced apart in the circumferential direction of the conductive wire ring 2. And in a preferred example, the conductive wires 13 and the bumps 22 are welded in a one-to-one correspondence manner, so that the number of the conductive wires 13 is 6, the number of the electrical connection points 16 of the conductive wires 13 and the annular conductive layer 12 is also preferably 6, and the electrical connection points 16 and the welding points are in a one-to-one correspondence manner, namely the electrical connection points and the welding points are the same position points. With such an arrangement, it is helpful to ensure the electrical connection of the conductive wire loop 2 and the conductive wire 13 without affecting the loop body 21 of the conductive wire loop 2. Adopt the welding mode rather than adopting traditional metal screw fixed mode between wire ring and the conductor wire, can effectively avoid the metal screw among the prior art to conduct heat, cause fixed screw hole to damage, use a period of time after, the screw can retreat, lead to wire ring and bottom plate contact failure, cause and generate heat and high temperature in the twinkling of an eye, lead to the problem of carrier scorch loss, help prolonging the life of electroplating the carrier, reduction in production cost.
Of course, in other examples, the number of the bumps 22 on the conductive wire loop 2 is not limited to 6, and the number of the soldering points and the electrical connection points is not limited to 6, and other options are also available, but it is preferable that the number of the bumps 22, the number of the slots, the number of the soldering points, and the number of the conductive wires 13 are the same.
By way of example, the conductive wire loop 2 includes, but is not limited to, a titanium ring, which has good stability and helps to improve the service life of the entire electroplating carrier.
As an example, a plurality of screw holes 15 are uniformly distributed on the anode base plate 1 along the circumferential direction, the screw holes 15 are located at the periphery of the receiving groove 11, and the cover plate is fixed to the anode base plate 1 by screws passing through the screw holes 15. As an example, the cover plate is a rectangular plate (precisely, a circumferential rectangle), and a circular hole is disposed on the rectangular plate, and the circular hole corresponds to an area to be plated of the wafer. The wafer can be placed in the accommodating groove 11 of the anode base plate 1 with the surface to be plated facing downward. The cover plate can be made of nonmetal materials such as polytetrafluoroethylene.
As an example, a conducting strip 14 is further disposed on the anode base plate 1, and is located at the periphery of the accommodating groove 11, and the conducting wire 13 is electrically connected with the conducting strip 14. The anode base plate 1 can be also provided with a suspension window, so that the whole electroplating carrier can be conveniently fixed.
When the electroplating carrier is used, the surface to be electroplated of the wafer to be electroplated can be placed downwards into the accommodating groove 11 of the anode base plate 1 (the edge of the wafer is provided with a metal seed layer, for example, a 2.5um sputtered copper layer is connected with the annular conductive layer 12 on the anode base plate 1, the electroplating solution is separated from the edge sputtered copper layer by a sealing ring), and the wafer is sealed on the anode base plate 1 by a cover plate (the anode base plate 1 and the cover plate are locked by screws). That is, the region of the front wafer to be plated contacts the plating solution, the conductive sheet 14 is inserted into the cathode conductive seat and connected to the anode, and then the electroplating process is completed by electrifying.
The inventors have tried the plating carrier of the present invention several times in a factory. Trial results show that the service life of the plating carrier of the present invention can be extended by more than 20% compared to conventional carriers (in terms of the number of wafers that can be processed by a single plating carrier). At present, the electroplating carrier is already popularized and used in the factory where the inventor is located.
The invention also provides an electroplating method, wherein the electroplating carrier in any scheme is adopted to fix the wafer to be electroplated in the electroplating process, after the wafer and the electroplating carrier are fixed, the wafer and the electroplating carrier are put into electroplating solution, and the electroplating process is finished according to the set electroplating parameters (including electroplating time, electroplating size, electroplating solution concentration and the like). The electroplating method of the present invention is the same as the conventional electroplating method except for the difference that the electroplating carrier of the present invention is used, and the details thereof are not described herein since they are well known to those skilled in the art. The electroplating method using the electroplating carrier has the advantages that the electroplating carrier is not burnt due to local overheating, the pollution of electroplating liquid is not needed, the service life of the electroplating carrier can be greatly prolonged, the electroplating cost is reduced, and the electroplating quality is improved.
As described above, the present invention provides an electroplating carrier and an electroplating method. Electroplating carrier includes positive pole bottom plate and wire loop, be provided with on the positive pole bottom plate and hold the recess, the circumference that holds the recess is provided with annular conducting layer, still be provided with the conductor wire on the positive pole bottom plate, the conductor wire with annular conducting layer electricity is connected just the conductor wire is kept away from the direction that holds the recess extends, the wire loop inlays to be located hold in the recess, just the wire loop with the wire welding on the positive pole bottom plate, the wire loop with the welding point surface covering of conductor wire has sealed glue, treats that the wafer of electroplating is located hold in the recess, and inlays to be located the inboard of wire loop. The electroplating carrier is characterized in that the anode base plate is provided with a conductive wire ring, the conductive wire ring is arranged on the anode base plate, and the conductive wire ring is arranged on the anode base plate. The electroplating method using the electroplating carrier is beneficial to improving the electroplating quality and reducing the electroplating cost. The invention can be applied to the electroplating of the wafer and can be popularized to other environments needing electroplating operation. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. The utility model provides an electroplating carrier, its characterized in that, electroplating carrier includes positive pole bottom plate and conducting wire ring, be provided with on the positive pole bottom plate and hold the recess, the circumference that holds the recess is provided with annular conducting layer, still be provided with the conductor wire on the positive pole bottom plate, the conductor wire with annular conducting layer electricity is connected just the conductor wire is kept away from the direction that holds the recess extends, the conductor wire ring inlays to be located hold in the recess, just the conductor wire ring with the conducting wire welding on the positive pole bottom plate, the conductor wire ring with the welding point surface of conductor wire covers there is sealed glue, and the wafer of treating electroplating is located hold in the recess, and inlay and locate the inboard of conductor wire ring.
2. The plating carrier of claim 1, wherein: the welding point of conducting wire ring sum conducting wire is 6, 6 welding points along the even interval distribution of circumference of conducting wire ring.
3. The plating carrier of claim 2, wherein: the number of the conductive wires is 6, the number of the electric connection points of the conductive wires and the annular conductive layer is 6, and the electric connection points correspond to the welding points one to one.
4. The plating carrier of claim 2, wherein: the anode bottom plate is provided with 6 clamping grooves which are evenly distributed at intervals, the clamping grooves are located the circumferential direction of the accommodating groove and communicated with the accommodating groove, the conductive wire ring comprises a ring body and 6 convex blocks which are evenly distributed at intervals along the circumferential direction of the ring body, the convex blocks are in one-to-one correspondence in the clamping grooves, and the welding points are correspondingly located on the convex blocks.
5. The plating carrier of claim 1, wherein: the anode bottom plate is also provided with a conducting strip which is positioned at the periphery of the accommodating groove, and the conducting wire is electrically connected with the conducting strip.
6. The plating carrier of claim 1, wherein: the anode bottom plate is evenly distributed with a plurality of screw holes along the circumferential direction, and the cover plate is fixed with the anode bottom plate through screws penetrating through the screw holes.
7. The plating carrier of claim 1, wherein: the conductive wire ring is a titanium ring.
8. The plating carrier of claim 1, wherein: the conductive wire and the annular conductive layer are both electroplated metal material layers.
9. An electroplating method, wherein the electroplating carrier of any one of claims 1-8 is used to fix a wafer to be electroplated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010849425.5A CN114075687A (en) | 2020-08-21 | 2020-08-21 | Electroplating carrier and electroplating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010849425.5A CN114075687A (en) | 2020-08-21 | 2020-08-21 | Electroplating carrier and electroplating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114075687A true CN114075687A (en) | 2022-02-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010849425.5A Pending CN114075687A (en) | 2020-08-21 | 2020-08-21 | Electroplating carrier and electroplating method |
Country Status (1)
| Country | Link |
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| CN (1) | CN114075687A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115496031A (en) * | 2022-11-15 | 2022-12-20 | 苏州浪潮智能科技有限公司 | Design method, device, equipment and medium of chip test carrier plate |
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| CN202671687U (en) * | 2012-06-08 | 2013-01-16 | 东莞市开美电路板设备有限公司 | Plating jig for package substrates |
| JP3218713U (en) * | 2018-08-24 | 2018-11-01 | 深▲せん▼市創智成功科技有限公司 | Conductive ring, power supply device using conductive ring, and electroplating jig using power supply device |
| CN109321963A (en) * | 2018-11-20 | 2019-02-12 | 吉姆西半导体科技（无锡）有限公司 | Electroplating cathode hanger |
| CN209323026U (en) * | 2018-11-20 | 2019-08-30 | 吉姆西半导体科技（无锡）有限公司 | Electroplating cathode hanger |
| CN210237824U (en) * | 2019-06-20 | 2020-04-03 | 大连达利凯普科技有限公司 | Hanger for gold plating of single-layer capacitor |
| CN212451704U (en) * | 2020-08-21 | 2021-02-02 | 中芯长电半导体（江阴）有限公司 | Electroplating carrier |
-
2020
- 2020-08-21 CN CN202010849425.5A patent/CN114075687A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202671687U (en) * | 2012-06-08 | 2013-01-16 | 东莞市开美电路板设备有限公司 | Plating jig for package substrates |
| JP3218713U (en) * | 2018-08-24 | 2018-11-01 | 深▲せん▼市創智成功科技有限公司 | Conductive ring, power supply device using conductive ring, and electroplating jig using power supply device |
| CN109321963A (en) * | 2018-11-20 | 2019-02-12 | 吉姆西半导体科技（无锡）有限公司 | Electroplating cathode hanger |
| CN209323026U (en) * | 2018-11-20 | 2019-08-30 | 吉姆西半导体科技（无锡）有限公司 | Electroplating cathode hanger |
| CN210237824U (en) * | 2019-06-20 | 2020-04-03 | 大连达利凯普科技有限公司 | Hanger for gold plating of single-layer capacitor |
| CN212451704U (en) * | 2020-08-21 | 2021-02-02 | 中芯长电半导体（江阴）有限公司 | Electroplating carrier |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115496031A (en) * | 2022-11-15 | 2022-12-20 | 苏州浪潮智能科技有限公司 | Design method, device, equipment and medium of chip test carrier plate |
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