CN114047163B - Terahertz frequency band plasma sensor and working method thereof - Google Patents
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Abstract
The invention provides a terahertz frequency band plasma sensor and a working method thereof. The sensor comprises a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is separated from the first resonator by a certain distance, and the first resonator is separated from the second resonator by a certain distance; during detection, an object to be detected is combined with the sensor to cause the change of the SPPs wave propagation constant in the sensor, so that the first resonator and the second resonator are in resonance coupling, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the identification of the change of the dielectric constant of the object to be detected is realized.
Description
Technical Field
The invention belongs to the technical field of terahertz frequency band plasma sensor design, and particularly relates to a terahertz frequency band plasma sensor and a working method thereof.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
Along with the continuous development of terahertz technology, the corresponding high-sensitivity sensor has important application value in the fields of biological detection, food safety, medical imaging and the like. However, because of the limitation of terahertz source resolution and terahertz wave-substance interaction, the terahertz sensing technical index is difficult to break through. In recent years, the scientific community has proposed an artificial material applied to the terahertz frequency band, namely dirac semi-metal, also called "3D graphene". Similar to graphene materials, dirac semi-metals can also excite surface plasma polarized waves (SPPs) on the surface of the dirac semi-metals by adjusting the material parameters of the dirac semi-metals, and the enhancement fields generated by the SPPs can break through diffraction limits so as to realize photonic devices with sub-wavelength scale.
In an atomic system driven by laser, coupling between a continuous state and a discrete state generates a quantum interference effect and a distinct reflection peak in its absorption band, which is called electromagnetic induced transparent reflection (EIR). At present, the condition for generating the EIR effect in an atomic system is very harsh, and the resonance coupling between micro-nano structures of a low-dimensional material can also generate the similar EIR effect, and the unique field energy distribution generated in the reflection window of the micro-nano structures can have potential application in the fields of biological sensing, nonlinear optics and the like.
At present, the terahertz frequency band sensing technology mainly utilizes electromagnetic waves to realize resolution performance of sub-wavelength scale by local electromagnetic resonance on the surface of the metamaterial, and can realize higher resolution and sensitivity. However, the biosensor based on the metamaterial structure adopts a complex periodic structure, so that the requirements on the size and the processing precision are very strict, and meanwhile, the adhesion characteristic of the object to be detected is also strictly required, so that the detection sensitivity and the reliability of the biosensor are required to be further improved.
Disclosure of Invention
In order to solve the problems, the invention provides a terahertz frequency band plasma sensor and a working method thereof.
According to some embodiments, the present invention employs the following technical solutions:
In a first aspect, the invention provides a terahertz frequency band plasma sensor.
A terahertz frequency band plasma sensor comprises a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is separated from the first resonator by a certain distance, and the first resonator is separated from the second resonator by a certain distance;
During detection, an object to be detected is combined with the sensor to cause the change of the SPPs wave propagation constant in the sensor, so that the first resonator and the second resonator are in resonance coupling, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the identification of the change of the dielectric constant of the object to be detected is realized.
Further, the transmission waveguide, the first resonator and the second resonator are all of a double-layer dirac semi-metal clamping silicon material structure.
Further, the dirac semi-metal material thickness is set to 0.2 μm.
Further, the fermi level corresponding to the dirac semi-metal material is set to be E F =0.050 eV.
Further, the distance between the two dirac semi-metals is w=40 μm.
Further, the relative dielectric constant of the silicon material is 11.9.
Further, the transmission waveguide is spaced apart from the first resonator by a distance unequal to the distance by which the first resonator is spaced apart from the second resonator.
Further, the length of the first resonator is the same as the length of the second resonator.
Further, the first resonator and the second resonator have the same resonance frequency.
In a second aspect, the invention provides a working method of a terahertz frequency band plasma sensor
A working method of a terahertz frequency band plasma sensor comprises the following steps:
During detection, an object to be detected is combined with the terahertz frequency band plasma sensor in the first aspect, so that the change of the SPPs wave propagation constant in the sensor is caused, resonance coupling is caused between the first resonator and the second resonator, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the identification of the change of the dielectric constant of the object to be detected is realized.
Compared with the prior art, the invention has the beneficial effects that:
the sensor provided by the invention has the advantages of simple structure, stable performance, high sensitivity and high quality factor.
Compared with the traditional metamaterial structure sensor, the sensor provided by the invention has the advantages that the relative dielectric constant range of the detectable object of the sensor is 1.0-2.5, and the sensor has a larger modulation space.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention.
FIG. 1 is a side view block diagram of a terahertz frequency band plasma sensor shown in the present invention;
Fig. 2 (a) is a graph showing the reflection spectrum of the sensor under the conditions of d=g=5 μm, w=40 μm, L 1＝L2 =90 μm, h=50 μm and ε r =1 according to the second embodiment of the present invention;
FIG. 2 (b) is a graph showing the Hz component of the sensor magnetic field at an operating frequency of 1.17THz, corresponding to the point A in the reflectance spectrum, according to the second embodiment of the present invention;
FIG. 2 (c) is a graph showing the Hz component of the sensor magnetic field at an operating frequency of 1.20THz, corresponding to point B in the reflectance spectrum, according to a second embodiment of the present invention;
FIG. 2 (d) is a graph of the Hz component of the sensor magnetic field at an operating frequency of 1.23THz, corresponding to point C in the reflectance spectrum, according to a second embodiment of the present invention;
fig. 3 is a graph of a reflection spectrum of a sensor under the condition that a fermi level of the second embodiment of the invention is E F =0.040-0.060 eV;
fig. 4 (a) is a graph of a reflection spectrum of the sensor at a distance d= 2.5,5,7.5, 10 μm between the waveguide and the first resonator according to the second embodiment of the present invention;
fig. 4 (b) is a graph of the reflection spectrum of the sensor when the distance g= 2.5,5,7.5, 10, 12.5 μm between two resonators in the second embodiment of the present invention;
Fig. 5 is a graph showing a distribution of reflection peak frequencies of a sensor according to a change in a thickness h of an object to be measured when epsilon r =1.5 in the second embodiment of the present invention;
Fig. 6 (a) is a graph of reflectance spectrum of the sensor under conditions that dielectric constant of the object to be measured is epsilon r = 1.0,1.5,2.0 and 2.5 in the second embodiment of the present invention;
FIG. 6 (b) is a graph showing the sensitivity distribution of the sensor under different dielectric constants of the test object according to the second embodiment of the present invention;
Fig. 7 is a graph showing reflection spectra of a sensor in different resonant modes when the relative dielectric constant epsilon r of an object to be measured is 1.0 and 1.5 in accordance with the second embodiment of the present invention.
The specific embodiment is as follows:
the invention will be further described with reference to the drawings and examples.
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present invention. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
In the present invention, the terms such as "upper", "lower", "horizontal" and the like refer to the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, but are merely relational terms used for convenience in describing the structural relationships of the various components or elements of the present invention, and are not meant to designate any one component or element of the present invention, and are not meant to limit the present invention.
Example 1
The embodiment provides a terahertz frequency band plasma sensor.
A terahertz frequency band plasma sensor comprises a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is separated from the first resonator by a certain distance, and the first resonator is separated from the second resonator by a certain distance;
During detection, an object to be detected is combined with the sensor to cause the change of the SPPs wave propagation constant in the sensor, so that the first resonator and the second resonator are in resonance coupling, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the identification of the change of the dielectric constant of the object to be detected is realized.
As shown in fig. 1, the sensor is composed of a transmission waveguide and two resonators with the same size, and the transmission waveguide and the resonator are both composed of a double-layer dirac semi-metal clamped silicon (Si) material. The to-be-detected object is combined with the sensor, so that the change of the SPPs wave propagation constant in the sensor can be caused, the transparent window in the reflection spectrum is shifted, and finally, the identification of different to-be-detected objects is realized. Compared with the traditional metamaterial structure sensor, the relative dielectric constant range of the sensor is 1.0-2.5, and the sensor has a large modulation space.
The sensor structure of this embodiment is composed of one transmission waveguide and two resonators of the same size, and both the transmission waveguide and resonator structure are composed of a double-layer dirac semi-metal clamped silicon (Si) material. The dirac half-metal material thickness is set to 0.2 μm, the corresponding fermi level is set to E F = 0.050eV, the distance w between the two dirac half-metals = 40 μm, and the length between the two resonators is L 1＝L2 = 90 μm, respectively. The relative dielectric constant of dielectric silicon (Si) is 11.9, the thickness of the object to be measured is h, and the value range of the relative dielectric constant epsilon r is 1.0-2.5. The coupling distance between the transmission waveguide and the first resonator is d, and the coupling distance between the first resonator and the second resonator is g. The terahertz plasma sensor performance indexes comprise sensor sensitivity S and a quality factor FOM. Wherein s=df/dn, df is the reflection peak frequency offset, and dn is the refractive index change of the object to be measured; fom=s/FWHM, which is the transparent window half maximum width value corresponding to the reflection peak. In general, the greater the sensor sensitivity S and figure of merit FOM values, the better the overall performance of the sensor. The sensor designed by the embodiment has the advantages of simple structure, stable performance, high sensitivity and high quality factor.
Working principle: the sensor of this embodiment is implemented by using electromagnetic induced transparent reflection (EIR) effect generated by mutual coupling between two resonators, and generating an obvious reflection peak at the input end of the transmission waveguide. The first resonator and the second resonator used by the sensor are the same size and have the same resonant frequency. The SPPs wave transmitted in the transmission waveguide is coupled into the first resonator first, and F-P resonance is generated in the resonator when the relation beta L=2mpi is satisfied in the first resonator, m=1, 2 …, wherein m is the order of the F-P resonance, L is the length of the resonator, and beta is the propagation constant of the SPPs wave in the resonator. The coupling of electromagnetic energy into the second resonator while the first resonator resonates will cause destructive interference between the two resonators to produce the EIR effect and induce a transparent reflection peak in the waveguide reflection spectrum. The transmission waveguide and resonator structure in the sensor are regarded as an air/object to be detected/dirac semi-metal/silicon/dirac semi-metal/object to be detected/air model, and the Maxwell boundary condition equation is utilized to calculate the propagation constant beta value of SPPs waves in the structure. The change of the relative dielectric constant epsilon r of the object to be detected can cause the change of the propagation constant beta value so as to shift the resonant frequency of the resonator, and the shift of the resonant frequency can cause the change of the reflection spectrum of the sensor so as to realize the sensing characteristic.
The sensor of the embodiment is a waveguide resonance coupling structure sensor, the enhancement field generated by SPPs wave transmitted in the sensor can break through diffraction limit in sub-wavelength scale, so that the sensor structure is more compact, and the generated local field can greatly inhibit loss and obtain larger reflection peak value.
When the thickness of the object to be measured in the sensor reaches the saturation thickness, the sensing characteristic of the object to be measured cannot change along with the increase of the thickness of the object to be measured, and the sensor has strong stability. By adjusting the fermi level of the dirac semi-metallic material, a larger modulation space can be achieved without changing the sensor structure. Meanwhile, higher sensitivity and quality factor can be obtained by improving the resonance order in the sensor, so that the performance of the sensor is further improved.
Example two
The embodiment provides a terahertz frequency band plasma sensor.
A working method of a terahertz frequency band plasma sensor comprises the following steps:
During detection, an object to be detected is combined with the terahertz frequency band plasma sensor in the first aspect, so that the change of the SPPs wave propagation constant in the sensor is caused, resonance coupling is caused between the first resonator and the second resonator, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the identification of the change of the dielectric constant of the object to be detected is realized.
In order to study the electromagnetic response of the invented sensor, numerical simulation was performed on the designed sensor using a time domain finite difference method. Fig. 2 (a) is a reflection spectrum of a sensor designed under the conditions that the parameters d=g=5 μm, w=40 μm, L 1＝L2 =90 μm, and the relative dielectric constant epsilon r =1 of the object to be measured. It can be seen that a significant reflection peak occurs between frequencies 1.0 and 1.3 THz. Fig. 2 (b) - (d) show the magnetic field Hz component diagrams at operating frequencies f=1.17, 1.20 and 1.23THz, corresponding to points A, B and C in the reflection spectrum of fig. 2 (a), respectively. Destructive interference due to the mutual coupling between the two resonators splits the resonant frequency into two reflection valleys, corresponding to points a and C in fig. 2 (a). It can be seen that the electromagnetic energy in the transmission trough points a and C is concentrated in resonator 1 and resonator 2, respectively. A significant reflection peak is generated between the two valleys and a significant electromagnetic field enhancement is obtained in both resonators, the magnetic field Hz component distribution of which is shown in fig. 2 (d). In general, we refer to the band range between points a and C as a transparent window. The simultaneous significant enhancement of the electromagnetic fields in both resonators at the reflection peak B point maximizes the energy interaction with the analyte, which is highly desirable in sensor design.
Due to the unique electrically tunable nature of dirac semi-metallic materials, free adjustment of the reflection window peak position can be achieved by adjusting their fermi level values. As can be seen from fig. 3, as the fermi level E F increases, the position of the reflection window shifts blue while ensuring that the shape of the entire reflection spectrum remains substantially unchanged. Since the resonant frequency of the resonator depends on the value of the propagation constant beta in which the SPPs are transmitted, while the magnitude of the beta varies with the fermi level E F of the dirac half-metal. It follows that by adjusting the fermi level of the dirac semi-metallic material, a larger modulation space can be achieved without changing the sensor structure.
To analyze the performance of the inventive sensor, FIG. 4 shows a reflection spectrum of the change in coupling distance between the transmission waveguide and the resonator within the sensor. As the coupling distance d increases, the reflection peak and the two valleys in the reflection spectrum also increase, as shown in fig. 4 (a). But the change in coupling distance d has little effect on the shift of the entire transparent reflection window. Meanwhile, fig. 4 (b) shows a graph of reflection spectrum when the distance g between the two resonators is changed. The bandwidth of the reflection window gradually decreases as the reflection peak blue shifts with increasing coupling distance g. While a smaller window bandwidth is advantageous for increasing the FOM value of the sensor and thus the performance of the sensor. Thus, in the sensor design, the optimal coupling distance between the transmission waveguide and the resonator takes d=5 μm, g=12.5 μm.
The change in the reflection peak of the sensor depends on the propagation constant β value of the SPPs wave transmitted within the sensor resonator. When epsilon r = 1.5, h >10 μm, the propagation constant β value remains constant, resulting in the reflection peak frequency of the sensor remaining substantially unchanged, as shown in fig. 5. Meanwhile, when epsilon r is taken to be 2.0 and 2.5, the corresponding reflection peak frequency is basically unchanged when the thickness h of the object to be detected is more than 10 mu m. It can be seen that the sensor has reached a saturation thickness for the analyte when the analyte thickness h=10μm. Therefore, when the thickness h of the object to be detected is more than 10 mu m, the sensing characteristic of the sensor does not change along with the increase of h, so that the sensor has stronger stability.
Fig. 6 (a) shows a graph of the reflectance spectrum of the sensor under conditions where the relative permittivity of the test object is epsilon r = 1.0,1.5,2.0 and 2.5. In order that the thickness of the object to be measured does not affect the propagation constant in the resonator, we take the thickness of the object to be measured, h=50 μm. The reflection spectrum is correspondingly red shifted along with the increase of the dielectric constant epsilon r of the object to be detected, so that the offset of the reflection spectrum is realized. Fig. 6 (b) is a sensitivity profile of the sensor under different relative dielectric constant conditions. The sensor sensitivity increases with increasing dielectric constant values, but also increases due to the FWHM values within their corresponding reflection windows. Therefore, when epsilon r =1, the FOM value corresponding to the sensor is the maximum value, and can reach 3.2.
The sensitivity and FOM value of the sensor can be improved by improving the resonant order of the resonator in the sensor, so that the overall performance of the sensor is improved. FIG. 7 is a graph showing the reflectance spectrum of the sensor when the relative dielectric constant ε r of the sample is 1.0 and 1.5. The propagation constant beta value of SPPs wave transmitted in the resonator is increased along with the increase of the working frequency; while a high value of the propagation constant may further improve the sensitivity of the sensor. The mode 2 sensitivity can reach 120GHz/RIU, and the corresponding FOM value is increased to 4.2 relative to the FOM of 3.2 under the condition of 48 in the mode 1.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The terahertz frequency band plasma sensor is characterized by comprising a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is separated from the first resonator by a certain distance, and the first resonator is separated from the second resonator by a certain distance; the transmission waveguide, the first resonator and the second resonator are all double-layer dirac semi-metal silicon material clamping structures; the length of the first resonator is the same as that of the second resonator, and the first resonator and the second resonator have the same resonance frequency;
During detection, an object to be detected is combined with the sensor to cause the change of the SPPs wave propagation constant in the sensor, so that the first resonator and the second resonator are in resonance coupling to generate an electromagnetic induction transparent reflection effect, a transparent window in a reflection spectrum is shifted, and the identification of the change of the dielectric constant of the object to be detected is realized; wherein, the resonance coupling between the two resonators generates destructive interference to split the resonance frequency into two reflection valleys; electromagnetic energy in the reflection valley is concentrated within the first resonator and the second resonator, respectively; a distinct reflection peak is generated between the two reflection valleys and a significant electromagnetic field enhancement is obtained in both resonators.
2. The terahertz frequency band plasma sensor according to claim 1, wherein the dirac semi-metallic material thickness is set to 0.2 μm.
3. The terahertz frequency band plasma sensor according to claim 1, wherein a fermi level corresponding to the dirac semi-metallic material is set to E F = 0.050eV.
4. The terahertz frequency band plasma sensor according to claim 1, wherein the distance between the two-layer dirac half-metals is w=40 μm.
5. The terahertz frequency band plasma sensor according to claim 1, wherein the relative dielectric constant of the silicon material is 11.9.
6. The terahertz frequency band plasmon sensor of claim 1 wherein the transmission waveguide is spaced apart from the first resonator by a distance that is unequal to the distance by which the first resonator is spaced apart from the second resonator.
7. The working method of the terahertz frequency band plasma sensor is characterized by comprising the following steps of:
During detection, the to-be-detected object is combined with the terahertz frequency band plasma sensor according to any one of claims 1 to 6, so that the change of the propagation constant of SPPs waves in the sensor is caused, the first resonator and the second resonator are resonantly coupled, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the identification of the change of the dielectric constant of the to-be-detected object is realized.
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