CN114039573A - Surface acoustic wave resonator, surface acoustic wave filter, manufacturing method of surface acoustic wave resonator and manufacturing method of surface acoustic wave filter, and communication device - Google Patents
Surface acoustic wave resonator, surface acoustic wave filter, manufacturing method of surface acoustic wave resonator and manufacturing method of surface acoustic wave filter, and communication device Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02653—Grooves or arrays buried in the substrate
- H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
A surface acoustic wave resonator, a surface acoustic wave filter, a method for manufacturing the surface acoustic wave resonator and the surface acoustic wave filter, and a communication device are provided. The surface acoustic wave resonator comprises a piezoelectric material layer, an interdigital transducer and a dielectric layer; the interdigital transducer is positioned on one side of the piezoelectric material layer, the dielectric layer is positioned between the interdigital transducer and the piezoelectric material layer, the interdigital transducer comprises a first electrode and a second electrode, the first electrode comprises a plurality of first strip-shaped electrode parts, the second electrode comprises a plurality of second strip-shaped electrode parts, each first strip-shaped electrode part extends along a first direction, each second strip-shaped electrode part extends along the first direction, and the plurality of first strip-shaped electrode parts and the plurality of second strip-shaped electrode parts are arranged in a second direction. Thus, the surface acoustic wave resonator can reduce the electromechanical coupling coefficient thereof by providing the dielectric layer between the interdigital transducer and the piezoelectric material layer. In addition, the surface acoustic wave resonator can adjust the electromechanical coupling coefficient of the surface acoustic wave resonator by controlling the thickness of the dielectric layer.
Description
Technical Field
The embodiment of the disclosure relates to a surface acoustic wave resonator, a surface acoustic wave filter, a manufacturing method of the surface acoustic wave resonator and the surface acoustic wave filter, and a communication device.
Background
As communication technology advances from 2G to 5G, and even 6G, the number of communication bands increases (e.g., from 4 bands at 2G to more than 50 bands at 5G). Therefore, in order to improve the compatibility of different communication systems, the usage amount of the filter required by communication devices such as smart phones and the like is remarkably increased, and the large-scale growth of the filter market is promoted.
At present, in communication devices such as smart phones, a widely used rf filter is a surface acoustic wave filter, which can be used to extract signals of specific frequencies from a plurality of input rf signals. On the other hand, with the continuous development of communication technology and the development of radio frequency front end modularization, the market demand for filters tends to be complicated, high-end and small.
Disclosure of Invention
The embodiment of the disclosure provides a surface acoustic wave resonator, a surface acoustic wave filter, a manufacturing method of the surface acoustic wave resonator and the surface acoustic wave filter, and a communication device. By providing a dielectric layer between the interdigital transducer and the piezoelectric material layer, the surface acoustic wave resonator can reduce the electromechanical coupling coefficient of the surface acoustic wave resonator. In addition, the surface acoustic wave resonator can adjust the electromechanical coupling coefficient of the surface acoustic wave resonator by controlling the thickness of the dielectric layer. At least one resonator in the filter adopts the surface acoustic wave resonator with the adjustable electromechanical coupling coefficient, so that higher performance, such as better passband or roll-off performance, can be realized. On the other hand, the filter provided by the embodiment of the disclosure can also remove the dielectric layer between the piezoelectric material layer and the interdigital transducer in other resonators through an etching process to improve the steepness of the transition band of the filter.
At least one embodiment of the present disclosure provides a surface acoustic wave resonator, including: a layer of piezoelectric material; an interdigital transducer located on one side of the piezoelectric material layer; the dielectric layer is located between the interdigital transducer and the piezoelectric material layer, the interdigital transducer comprises a first electrode and a second electrode, the first electrode comprises a plurality of first strip-shaped electrode parts, the second electrode comprises a plurality of second strip-shaped electrode parts, each first strip-shaped electrode part extends along a first direction, each second strip-shaped electrode part extends along the first direction, the first strip-shaped electrode parts and the second strip-shaped electrode parts are arranged in a second direction, and the second direction is intersected with the first direction.
For example, in a surface acoustic wave resonator provided by an embodiment of the present disclosure, a material of the dielectric layer includes one or more of silicon oxide, silicon nitride, and silicon oxynitride.
For example, in a saw resonator provided in an embodiment of the present disclosure, the dielectric layer has a thickness in a range of 5 to 20 nm.
For example, in a surface acoustic wave resonator provided by an embodiment of the present disclosure, the plurality of first strip-shaped electrode portions and the plurality of second strip-shaped electrode portions are alternately arranged in the second direction.
For example, in the surface acoustic wave resonator provided by an embodiment of the present disclosure, at least two second strip-shaped electrode portions are disposed between two adjacent first strip-shaped electrode portions.
For example, an embodiment of the present disclosure provides a surface acoustic wave resonator further including: and the adjusting capacitor comprises a first polar plate and a second polar plate, wherein the first polar plate is electrically connected with the first electrode, and the second polar plate is electrically connected with the second electrode.
For example, in a surface acoustic wave resonator provided by an embodiment of the present disclosure, the piezoelectric material layer includes a piezoelectric crystal or a piezoelectric ceramic.
For example, in a surface acoustic wave resonator provided by an embodiment of the present disclosure, the material of the interdigital transducer includes one or more of gold, tungsten, silver, titanium, platinum, aluminum, copper, and molybdenum.
For example, an embodiment of the present disclosure provides a surface acoustic wave resonator further including: the reflection electrode structure is located be provided with of piezoelectric material layer one side of interdigital transducer, the piezoelectric material layer includes first region and two second regions of arranging on the second direction, first region is located two between the second region, interdigital transducer is located first region, the reflection electrode structure is located the second is regional.
For example, in a surface acoustic wave resonator provided by an embodiment of the present disclosure, the dielectric layer is located only in the first region.
At least one embodiment of the present disclosure also provides a filter, including: a series branch including M series resonators; and N parallel branches, each of which comprises at least one parallel resonator, M series resonators in the series branches are arranged in series, a first end of each parallel branch is grounded, a second end of each parallel branch is connected with the series branch, M and N are positive integers greater than or equal to 2, and at least one of the M series resonators and the parallel resonators in the N parallel branches adopts the surface acoustic wave resonator.
For example, in a filter provided in an embodiment of the present disclosure, the surface acoustic wave resonators are used for the parallel resonators in N parallel branches.
For example, in a filter provided in an embodiment of the present disclosure, at least some of the M series resonators use the surface acoustic wave resonator.
For example, in a filter provided in an embodiment of the present disclosure, a part of M series resonators uses the surface acoustic wave resonator, and another part of M series resonators uses a thin film resonator, and the thin film resonator includes: a piezoelectric layer; and an electrode pattern located at one side of the piezoelectric layer and directly contacting the piezoelectric layer.
For example, in the filter provided in an embodiment of the present disclosure, in a series order of M series resonators, the surface acoustic wave resonator is used as a first series resonator and an M-th series resonator, and the thin film resonator is used as another series resonator among the M series resonators.
At least one embodiment of the present disclosure also provides a communication device including the filter of any one of the above embodiments.
At least one embodiment of the present disclosure further provides a method for manufacturing a filter, including: forming a dielectric material layer on the piezoelectric material layer; partially removing the dielectric material layer by adopting an etching process to form a dielectric layer and an opening region; and forming an interdigital transducer and an electrode pattern on one side of the piezoelectric material layer and the dielectric layer, wherein the interdigital transducer is positioned on one side of the dielectric layer far away from the piezoelectric material layer, the electrode pattern is positioned in the opening area and is in direct contact with the piezoelectric material layer, the interdigital transducer comprises a first electrode and a second electrode, the first electrode comprises a plurality of first strip-shaped electrode parts, the second electrode comprises a plurality of second strip-shaped electrode parts, each first strip-shaped electrode part extends along a first direction, each second strip-shaped electrode part extends along the first direction, the plurality of first strip-shaped electrode parts and the plurality of second strip-shaped electrode parts are arranged in a second direction, and the second direction is intersected with the first direction.
For example, in a method for manufacturing a filter provided by an embodiment of the present disclosure, the filter includes a series branch including M series resonators; and N parallel branches, each of which includes at least one parallel resonator, M of the series resonators in the series branches are arranged in series, a first end of each of the parallel branches is grounded, a second end of each of the parallel branches is connected with the series branch, M and N are positive integers greater than or equal to 2, and forming an interdigital transducer and an electrode pattern on one side of the piezoelectric material layer and the dielectric layer includes: forming the interdigital transducer on one side of the dielectric layer to form the parallel resonators of the N parallel branches and a portion of the M series resonators; and forming the electrode pattern in the open region of the dielectric layer to form another part of the M series resonators.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description relate only to some embodiments of the present disclosure and are not limiting to the present disclosure.
Fig. 1 is a schematic cross-sectional view of a surface acoustic wave resonator according to an embodiment of the present disclosure;
fig. 2 is a schematic plan view of a surface acoustic wave resonator according to an embodiment of the present disclosure;
fig. 3 is a schematic plan view of another saw resonator according to an embodiment of the present disclosure;
fig. 4 is a schematic cross-sectional view of another saw resonator according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of another saw resonator provided in an embodiment of the present disclosure;
fig. 6A is a schematic plan view of a filter according to an embodiment of the disclosure;
fig. 6B is a schematic diagram of an equivalent circuit of a filter according to an embodiment of the disclosure;
fig. 7 is a schematic cross-sectional view of a thin-film resonator according to an embodiment of the present disclosure;
fig. 8 is a transmission characteristic curve of a filter according to an embodiment of the present disclosure;
fig. 9 is a schematic diagram illustrating a method for manufacturing a filter according to an embodiment of the disclosure; and
fig. 10 is a schematic diagram of a communication device according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be described clearly and completely with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
Unless otherwise defined, features such as "parallel," "perpendicular," and "the same" used in the embodiments of the present disclosure include cases such as "parallel," "perpendicular," "the same," and the like in a strict sense, and cases such as "substantially parallel," "substantially perpendicular," "substantially the same," and the like, include a certain error. For example, "approximately" as described above may mean that the difference value of the compared objects is 10% or within 5% of the average value of the compared objects. When the number of one component or element is not particularly specified in the following of the embodiments of the present disclosure, it means that the component or element may be one or more, or may be understood as at least one. "at least one" means one or more, and "a plurality" means at least two. The "same layer arrangement" in the embodiments of the present disclosure refers to a relationship between a plurality of film layers formed by the same material after the same step (e.g., one-step patterning process). The "same layer" herein does not always mean that the thickness of the plurality of film layers is the same or that the height of the plurality of film layers in the cross-sectional view is the same.
In the study, the inventors of the present application noted that: as the frequency bands required to be supported by the radio frequency front end module are more and more, the interval between adjacent filters is smaller and smaller; under the condition that the frequency temperature coefficient and the quality factor of the filter are not adjustable, the adjustment of the steepness of the transition band of the filter has very important significance for the filter.
At least one embodiment of the present disclosure provides a surface acoustic wave resonator. The surface acoustic wave resonator comprises a piezoelectric material layer, an interdigital transducer and a dielectric layer; the interdigital transducer is positioned on one side of the piezoelectric material layer, and the dielectric layer is positioned between the interdigital transducer and the piezoelectric material layer. Thus, the surface acoustic wave resonator can reduce the electromechanical coupling coefficient thereof by providing the dielectric layer between the interdigital transducer and the piezoelectric material layer. In addition, the surface acoustic wave resonator can adjust the electromechanical coupling coefficient of the surface acoustic wave resonator by controlling the thickness of the dielectric layer.
At least one embodiment of the present disclosure also provides a filter. The filter comprises a series branch and N parallel branches; the series branch comprises M series resonators, and each parallel branch comprises at least one parallel resonator; m series resonators in the series branches are arranged in series, the first end of each parallel branch is grounded, the second end of each parallel branch is connected between two adjacent series resonators, M and N are positive integers greater than or equal to 2, at least one of the M series resonators and the parallel resonators in the N parallel branches adopts any one of the surface acoustic wave resonators, namely the surface acoustic wave resonator provided with the dielectric layer between the piezoelectric material layer and the interdigital transducer. While the electromechanical coupling coefficients of different resonators in a typical filter are similar, the disclosed embodiments provide that at least one resonator in the filter employs a surface acoustic wave resonator with an adjustable electromechanical coupling coefficient, thereby achieving higher performance, such as better passband or roll-off performance. On the other hand, the filter provided by the embodiment of the disclosure can also remove the dielectric layer between the piezoelectric material layer and the interdigital transducer in other resonators through an etching process to improve the steepness of the transition band of the filter.
At least one embodiment of the present disclosure further provides a method for manufacturing a filter, where the method for manufacturing a filter includes: forming a dielectric material layer on the piezoelectric material layer; partially removing the dielectric material layer by adopting an etching process to form a dielectric layer and an opening region; and forming an interdigital transducer and an electrode pattern on one side of the piezoelectric material layer and the dielectric layer, wherein the interdigital transducer is positioned on one side of the dielectric layer away from the piezoelectric material layer, and the electrode pattern is positioned in the opening area and is in direct contact with the piezoelectric material layer. The interdigital transducer and the corresponding piezoelectric material layer formed on the dielectric layer may form the above-described surface acoustic wave resonator, and the electrode pattern formed in the opening region and the corresponding piezoelectric material layer may form another resonator (hereinafter, referred to as a thin film resonator for distinction) having a different electromechanical coupling coefficient. Therefore, the manufacturing method of the filter can partially remove the dielectric material layer through an etching process to form the dielectric layer and the opening area so as to enable different resonators in the filter to have different electromechanical coupling coefficients, and therefore higher performance, such as better passband or roll-off performance, can be achieved. In addition, the manufacturing method of the filter also has the advantages of simple process, lower cost and the like.
At least one embodiment of the present disclosure also provides a communication device. The communication device comprises the filter, so that the communication device also has higher performance and lower cost.
Hereinafter, a surface acoustic wave resonator, a filter, a method for manufacturing the same, and a communication device according to embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
An embodiment of the present disclosure provides a surface acoustic wave resonator. Fig. 1 is a schematic cross-sectional view of a surface acoustic wave resonator according to an embodiment of the present disclosure. As shown in fig. 1, the surface acoustic wave resonator 100 includes a piezoelectric material layer 110, an interdigital transducer 120, and a dielectric layer 130; the interdigital transducer 120 is located at one side of the piezoelectric material layer 110, and drives the piezoelectric material layer 110 to generate a surface acoustic wave by using an inverse piezoelectric effect, or receives an electric signal generated by the piezoelectric material layer 110 due to the piezoelectric effect; dielectric layer 130 is located between interdigital transducer 120 and piezoelectric material layer 110.
In the surface acoustic wave resonator provided by the embodiment of the present disclosure, by providing the dielectric layer between the interdigital transducer and the piezoelectric material layer, the surface acoustic wave resonator can reduce the electromechanical coupling coefficient of the surface acoustic wave resonator. In addition, the surface acoustic wave resonator can adjust the electromechanical coupling coefficient of the surface acoustic wave resonator by controlling the thickness of the dielectric layer. On the other hand, the mode that the dielectric coupling coefficient of the surface acoustic wave resonator is adjusted by adding the dielectric layer also has the advantages of simple process, lower cost and the like.
For example, the thickness of the dielectric layer per nanometer may correspond to a drop in the electromechanical coupling coefficient of about 1%.
In some examples, the material of the dielectric layer 130 may include one or more of silicon oxide, silicon nitride, and silicon oxynitride. Of course, the embodiments of the present disclosure include, but are not limited to, other dielectric materials may be used for the dielectric layer.
In some examples, the thickness of the dielectric layer 130 may range from 5 to 20 nanometers. Thus, the surface acoustic wave resonator can have a good performance. It should be noted that the thickness range of the dielectric layer is a trade-off result after comprehensively considering the performance of the filter; if the thickness of the dielectric layer is less than 5 nanometers, the film quality of the dielectric layer is poor; if the thickness of the dielectric layer is more than 25 nm, the quality factor of the surface acoustic wave resonator is lowered, and the insertion loss of a filter using the surface acoustic wave resonator is increased.
Of course, the thickness of the dielectric layer may be other values, including but not limited to the above.
In some examples, the piezoelectric material layer 110 includes a piezoelectric crystal or a piezoelectric ceramic. Of course, embodiments of the present disclosure include, but are not limited to, other types of piezoelectric materials for the piezoelectric material layer.
In some examples, the material of the piezoelectric material layer 110 may be aluminum nitride (AlN), doped aluminum nitride (doped AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO)3) Quartz (Quartz), potassium niobate (KNbO)3) And lithium tantalate (LiTaO)3) One or more of (a). Of course, the disclosed embodiments include, but are not limited to, the piezoelectric material layer may also be a piezoelectric thin film composite structure, such as a lithium tantalate piezoelectric thin film/silicon dioxide/silicon substrate composite structure.
In some examples, the material of the interdigital transducer 120 may include one or more of gold, tungsten, silver, titanium, platinum, aluminum, copper, and molybdenum. Of course, the material of the interdigital transducer can be other conductive materials, including but not limited to the embodiments disclosed herein.
Fig. 2 is a schematic plan view of a surface acoustic wave resonator according to an embodiment of the present disclosure. As shown in fig. 2, the interdigital transducer 120 includes a first electrode 121 and a second electrode 122; the first electrode 121 includes a plurality of first strip-shaped electrode portions 1210, and the second electrode 122 includes a plurality of second strip-shaped electrode portions 1220; each first strip-shaped electrode portion 1210 extends along the first direction X, each second strip-shaped electrode portion 1220 extends along the first direction X, and the plurality of first strip-shaped electrode portions 1210 and the plurality of second strip-shaped electrode portions 1220 are arranged in the second direction Y, which intersects the first direction. It should be noted that, in fig. 2, the number of each strip-shaped electrode portion is only illustrative, and the embodiment of the disclosure is not limited in particular here.
For example, the second direction may be perpendicular to the first direction. Of course, the embodiments of the present disclosure include, but are not limited to, the second direction and the first direction may not be perpendicular.
In some examples, as shown in fig. 2, the plurality of first strip electrode parts 1210 and the plurality of second strip electrode parts 1220 are alternately arranged in the second direction. That is, only one second strip electrode portion 1220 is disposed between two adjacent first strip electrode portions 1210, and only one first strip electrode portion 1210 is disposed between two adjacent second strip electrode portions 1220. So set up, this surface acoustic wave resonator has higher electromechanical coupling coefficient.
In some examples, as shown in fig. 2, the first electrode 121 further includes a first bus bar 1215 connected to ends of the plurality of first strip-shaped electrode parts 1210, thereby forming a comb-tooth-shaped structure; the second electrode 122 further includes a second bus bar 1225 connected to ends of the plurality of second strip-shaped electrode portions 1220, thereby forming a comb-tooth-shaped structure.
In some examples, as shown in fig. 2, the surface acoustic wave resonator 100 further includes a reflective electrode structure 140, the reflective electrode structure 140 being located on a side of the piezoelectric material layer 110 on which the interdigital transducer 120 is disposed. The piezoelectric material layer 110 includes a first region 112 and two second regions 114 arranged in the second direction Y, the first region 112 being located between the two second regions 114, the interdigital transducer 120 being located in the first region 112, and the reflective electrode structure 140 being located in the second region 114. That is, the reflection electrode structures 140 are located on both sides of the interdigital transducer 120 in the second direction Y. The reflective electrode structure 140 can be used to reflect surface acoustic waves generated by the interdigital transducer 120.
In some examples, as shown in fig. 2, the reflective electrode structure 140 may include a plurality of third strip electrode parts 141 arranged in the second direction Y and third bus bars 142 connecting the plurality of third strip electrode parts 141, so that an electrode structure having a grid shape may be formed.
Fig. 3 is a schematic plan view of another saw resonator according to an embodiment of the present disclosure. As shown in fig. 3, the interdigital transducer 120 includes a first electrode 121 and a second electrode 122; the first electrode 121 includes a plurality of first strip-shaped electrode portions 1210, and the second electrode 122 includes a plurality of second strip-shaped electrode portions 1220; each first strip-shaped electrode part 1210 extends along the first direction X, each second strip-shaped electrode part 1220 extends along the first direction X, the plurality of first strip-shaped electrode parts 1210 and the plurality of second strip-shaped electrode parts 1220 are arranged in the second direction Y, and at least two second strip-shaped electrode parts 1220 are arranged between two adjacent first strip-shaped electrode parts 1210, so that the condition that the first strip-shaped electrode parts and the second strip-shaped electrode parts are alternately arranged can be changed, and the electromechanical coupling coefficient can be reduced. Thus, the surface acoustic wave resonator adjusts the electromechanical coupling coefficient by having at least two second strip-shaped electrode portions disposed between two adjacent first strip-shaped electrode portions.
Fig. 4 is a schematic cross-sectional view of another saw resonator according to an embodiment of the present disclosure. As shown in fig. 4, the piezoelectric material layer 110 includes a first region 112 and two second regions 114 arranged in the second direction Y, the first region 112 being located between the two second regions 114, the interdigital transducer 120 being located in the first region 112, and the reflective electrode structure 140 being located in the second region 114. At this time, the dielectric layer 130 is only located in the first region 112, that is, the dielectric layer 130 is only disposed between the interdigital transducer 120 and the piezoelectric material layer 110, and is not disposed between the reflective electrode structure 140 and the piezoelectric material layer 110.
Of course, embodiments of the present disclosure include, but are not limited to, referring to fig. 1, the dielectric layer 130 may also be disposed between the reflective electrode structure 140 and the piezoelectric material layer 100, so that a patterning process of the dielectric layer may be saved.
Fig. 5 is a schematic diagram of another saw resonator according to an embodiment of the present disclosure. As shown in fig. 5, the surface acoustic wave resonator 100 may further include an adjustment capacitor 150, the adjustment capacitor 150 including a first plate 151 and a second plate 152; the first electrode plate 151 is electrically connected to the first electrode 121, and the second electrode plate 152 is electrically connected to the second electrode 122. Thus, the surface acoustic wave resonator can adjust the electromechanical coupling coefficient by connecting an adjusting capacitor in parallel.
It is to be noted that the surface acoustic wave resonator shown in fig. 5 may also include a dielectric layer as shown in fig. 1, and an interdigital transducer as shown in fig. 3 may also be employed. That is, several ways of adjusting the electromechanical coupling coefficient of the surface acoustic wave resonator described above may be combined with each other.
An embodiment of the present disclosure also provides a filter. Fig. 6A is a schematic plan view of a filter according to an embodiment of the disclosure; fig. 6B is a schematic diagram of an equivalent circuit of a filter according to an embodiment of the disclosure. As shown in fig. 6A and 6B, the filter 200 includes a series branch 201 and N parallel branches 202; the series branch 201 includes M series resonators 210, and each parallel branch 202 includes at least one parallel resonator 220; m series resonators 210 in the series branch 201 are arranged in series, a first end of each parallel branch 202 is grounded, a second end of each parallel branch 202 is connected with the series branch 201, and M and N are positive integers greater than or equal to 2; at least one of the M series resonators 210 and the parallel resonator 220 in the N parallel arms 202 employs the surface acoustic wave resonator 100 of any of the above. That is, at least one of the resonators in the filter employs the surface acoustic wave resonator 100 of any one of the above.
The electromechanical coupling coefficients of different resonators in a common filter are the same, so that the performance and parameter changes of the filter comprising a plurality of resonators are limited to a certain extent, and the requirements of the current market are difficult to meet. However, in the filter provided by the embodiment of the present disclosure, since the above-described surface acoustic wave resonator can adjust the electromechanical coupling coefficient of the surface acoustic wave resonator by disposing the dielectric layer between the interdigital transducer and the piezoelectric material layer, the filter can achieve higher performance, such as better passband or roll-off performance, by employing at least one resonator with the above-described surface acoustic wave resonator whose electromechanical coupling coefficient is adjustable. On the other hand, the filter provided by the embodiment of the disclosure can also remove the dielectric layer between the piezoelectric material layer and the interdigital transducer in other resonators through an etching process to improve the steepness of the transition band of the filter.
In some examples, as shown in fig. 6A and 6B, the parallel resonators 220 in the N parallel branches 202 each employ a saw resonator 100, thereby having better performance.
In some examples, as shown in fig. 6A and 6B, at least some of the M series resonators 210 employ the surface acoustic wave resonator 100 described above, whereby the steepness of the filter transition band can be improved.
In some examples, as shown in fig. 6A and 6B, a part of the M series resonators 210 employs the surface acoustic wave resonator 100, and another part of the M series resonators 210 employs the thin film resonator 230.
Fig. 7 is a schematic cross-sectional view of a thin-film resonator according to an embodiment of the present disclosure. As shown in fig. 7, the thin film resonator 230 includes a piezoelectric layer 231 and an electrode pattern 232, and the electrode pattern 232 is located on one side of the piezoelectric layer 231 and is disposed in direct contact with the piezoelectric layer 231. That is, the thin film resonator 230 is not provided with a dielectric layer between the piezoelectric layer and the electrode pattern.
In some examples, as shown in fig. 6A and 6B, the piezoelectric material layer 110 of the surface acoustic wave resonator 100 and the piezoelectric layer 231 of the thin film resonator 230 may be the same layer; the interdigital transducer 120 of the surface acoustic wave resonator 100 is disposed on the same layer as the electrode pattern 232 of the thin film resonator 230.
In some examples, as shown in fig. 6A and 6B, in the series order of M series resonators, the surface acoustic wave resonator 100 is used for the first series resonator 210 and the M-th series resonator 210 among the M series resonators 210 arranged in series, and the thin film resonator 230 described above is used for the other series resonators among the M series resonators 210.
Fig. 8 is a transmission characteristic curve of a filter according to an embodiment of the disclosure. As shown in fig. 8, curve 1 is a filter in which all the resonators use surface acoustic wave resonators, and curve 2 is a filter shown in fig. 6A and 6B. It can be seen that the steepness of the transition band of the filter can be improved by using the thin film resonator as the series resonator except for the first series resonator and the nth series resonator among the M series resonators, i.e., removing the dielectric layer of the series resonator except for the first series resonator and the nth series resonator among the M series resonators.
An embodiment of the present disclosure further provides a manufacturing method of the filter. Fig. 9 is a schematic diagram illustrating a manufacturing method of a filter according to an embodiment of the disclosure. As shown in fig. 9, the method of manufacturing the filter includes the following steps S101 to S103.
Step S101: forming a dielectric material layer on the piezoelectric material layer;
step S102: partially removing the dielectric material layer by adopting an etching process to form a dielectric layer and an opening region; and
step S103: and forming an interdigital transducer and an electrode pattern on one side of the piezoelectric material layer and the dielectric layer, wherein the interdigital transducer is positioned on one side of the dielectric layer away from the piezoelectric material layer, and the electrode pattern is positioned in the opening area and is in direct contact with the piezoelectric material layer.
In the method for manufacturing a filter according to the embodiment of the present disclosure, the interdigital transducer and the corresponding piezoelectric material layer formed on the dielectric layer may form the surface acoustic wave resonator, and the electrode pattern formed in the opening region and the corresponding piezoelectric material layer may form the thin film resonator. Therefore, the manufacturing method of the filter can partially remove the dielectric material layer through an etching process to form the dielectric layer and the opening area so as to enable different resonators in the filter to have different electromechanical coupling coefficients, and therefore higher performance, such as better passband or roll-off performance, can be achieved. In addition, the manufacturing method of the filter also has the advantages of simple process, lower cost and the like.
In some examples, a filter may include a series arm comprising M series resonators; and each parallel branch comprises at least one parallel resonator, M series resonators in the series branches are connected in series, the first end of each parallel branch is grounded, the second end of each parallel branch is connected with the series branches, and M and N are positive integers greater than or equal to 2. At this time, the above-mentioned forming of the interdigital transducer and the electrode pattern on one side of the piezoelectric material layer and the dielectric layer includes: forming an interdigital transducer on one side of the dielectric layer to form a parallel resonator of the N parallel branches and a part of the M series resonators; and forming an electrode pattern in the opening region of the dielectric layer to form another part of the M series resonators. It should be noted that, the specific structure of the filter can be referred to the related description of fig. 6A and fig. 6B.
At least one embodiment of the present disclosure also provides a communication device. Fig. 10 is a schematic diagram of a communication device according to an embodiment of the present disclosure. As shown in fig. 10, the communication device 300 includes the filter 200. The communication device comprises the filter, so that the communication device also has higher performance and lower cost.
In some examples, the communication device includes, but is not limited to, an intermediate product such as a radio frequency front end, a filtering and amplifying module, and may also be an end product such as a smart phone, WIFI, or an unmanned aerial vehicle.
The following points need to be explained:
(1) in the drawings of the embodiments of the present disclosure, only the structures related to the embodiments of the present disclosure are referred to, and other structures may refer to general designs.
(2) Features of the disclosure in the same embodiment and in different embodiments may be combined with each other without conflict.
The above is only a specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present disclosure, and shall be covered by the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (18)
1. A surface acoustic wave resonator comprising:
a layer of piezoelectric material;
an interdigital transducer located on one side of the piezoelectric material layer; and
a dielectric layer,
wherein the dielectric layer is located between the interdigital transducer and the piezoelectric material layer, the interdigital transducer comprises a first electrode and a second electrode, the first electrode comprises a plurality of first strip-shaped electrode parts, the second electrode comprises a plurality of second strip-shaped electrode parts,
each first strip-shaped electrode part extends along a first direction, each second strip-shaped electrode part extends along the first direction, the plurality of first strip-shaped electrode parts and the plurality of second strip-shaped electrode parts are arranged in a second direction, and the second direction is intersected with the first direction.
2. The surface acoustic wave resonator according to claim 1, wherein a material of said dielectric layer comprises one or more of silicon oxide, silicon nitride, and silicon oxynitride.
3. The surface acoustic wave resonator according to claim 1, wherein a thickness of said dielectric layer is in a range of 5-20 nm.
4. The surface acoustic wave resonator according to any one of claims 1 to 3, wherein the plurality of first strip-like electrode portions and the plurality of second strip-like electrode portions are alternately arranged in the second direction.
5. The surface acoustic wave resonator according to any one of claims 1 to 3, wherein at least two of said second strip-like electrode portions are provided between two adjacent ones of said first strip-like electrode portions.
6. The surface acoustic wave resonator according to any one of claims 1 to 3, further comprising:
the adjusting capacitor comprises a first polar plate and a second polar plate,
the first polar plate is electrically connected with the first electrode, and the second polar plate is electrically connected with the second electrode.
7. The surface acoustic wave resonator according to any one of claims 1 to 3, wherein said piezoelectric material layer comprises a piezoelectric crystal or a piezoelectric ceramic.
8. The surface acoustic wave resonator according to any one of claims 1 to 3, wherein the material of the interdigital transducer includes one or more of gold, tungsten, silver, titanium, platinum, aluminum, copper, and molybdenum.
9. The surface acoustic wave resonator according to any one of claims 1 to 3, further comprising:
a reflective electrode structure located on a side of the piezoelectric material layer where the interdigital transducer is disposed,
wherein the piezoelectric material layer includes a first region and two second regions arranged in the second direction, the first region being located between the two second regions, the interdigital transducer being located in the first region, and the reflective electrode structure being located in the second region.
10. The surface acoustic wave resonator according to claim 9, wherein said dielectric layer is located only in said first region.
11. A filter, comprising:
a series branch including M series resonators; and
n parallel branches, each of the parallel branches including at least one parallel resonator,
wherein M series resonators in the series branch are arranged in series, a first end of each parallel branch is grounded, a second end of each parallel branch is connected with the series branch, M and N are positive integers greater than or equal to 2,
at least one of the M series resonators and the parallel resonators in the N parallel arms employs the surface acoustic wave resonator according to any one of claims 1 to 10.
12. The filter of claim 11, wherein the surface acoustic wave resonators are employed for the parallel resonators in each of the N parallel branches.
13. The filter of claim 11, wherein at least some of the M series resonators employ the saw resonators.
14. The filter of claim 13, wherein a part of the M series resonators employs the surface acoustic wave resonator, and another part of the M series resonators employs a thin film resonator, the thin film resonator comprising:
a piezoelectric layer; and
an electrode pattern on one side of the piezoelectric layer and in direct contact with the piezoelectric layer.
15. The filter according to claim 14, wherein, in the series order of the M series resonators, the surface acoustic wave resonator is employed for a first one of the series resonators and an M-th one of the series resonators, and the thin film resonator is employed for the other ones of the M series resonators.
16. A communication device comprising a filter according to any of claims 11-15.
17. A method of making a filter, comprising:
forming a dielectric material layer on the piezoelectric material layer;
partially removing the dielectric material layer by adopting an etching process to form a dielectric layer and an opening region; and
forming an interdigital transducer and an electrode pattern on one side of the piezoelectric material layer and the dielectric layer,
wherein the interdigital transducer is located on one side of the dielectric layer far away from the piezoelectric material layer, the electrode pattern is located in the opening area and is in direct contact with the piezoelectric material layer, the interdigital transducer comprises a first electrode and a second electrode, the first electrode comprises a plurality of first strip-shaped electrode parts, the second electrode comprises a plurality of second strip-shaped electrode parts,
each first strip-shaped electrode part extends along a first direction, each second strip-shaped electrode part extends along the first direction, the plurality of first strip-shaped electrode parts and the plurality of second strip-shaped electrode parts are arranged in a second direction, and the second direction is intersected with the first direction.
18. The method of claim 17, wherein the filter comprises a series arm comprising M series resonators; and N parallel branches, each of the parallel branches including at least one parallel resonator, M of the series resonators in the series branches being arranged in series, a first end of each of the parallel branches being grounded, a second end of each of the parallel branches being connected to the series branch, M and N being positive integers greater than or equal to 2,
forming an interdigital transducer and an electrode pattern on one side of the piezoelectric material layer and the dielectric layer includes:
forming the interdigital transducer on one side of the dielectric layer to form the parallel resonators of the N parallel branches and a portion of the M series resonators; and
forming the electrode pattern in the open region of the dielectric layer to form another part of the M series resonators.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117097293A (en) * | 2023-08-24 | 2023-11-21 | 常州承芯半导体有限公司 | Surface acoustic wave resonator device, filter, duplexer, and method of forming surface acoustic wave resonator device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144507A (en) * | 1976-09-29 | 1979-03-13 | Texas Instruments Incorporated | Surface acoustic wave resonator incorporating coupling transducer into reflecting arrays |
| JPH1197973A (en) * | 1997-09-24 | 1999-04-09 | Murata Mfg Co Ltd | Surface wave device |
| CN1498455A (en) * | 2002-03-06 | 2004-05-19 | ���µ�����ҵ��ʽ���� | Surface acoustic wave filter, balance type circuit and communication apparatus |
| CN101939911A (en) * | 2008-02-05 | 2011-01-05 | 株式会社村田制作所 | Boundary acoustic wave device |
| CN204615783U (en) * | 2012-08-29 | 2015-09-02 | 株式会社村田制作所 | Acoustic wave device and filter apparatus |
| CN108121889A (en) * | 2018-02-11 | 2018-06-05 | 海宁市瑞宏科技有限公司 | A kind of SAW filter resonator structure with horizontal mould inhibition |
| CN109983696A (en) * | 2016-11-25 | 2019-07-05 | 株式会社村田制作所 | Acoustic wave filter device |
| CN110858763A (en) * | 2018-08-22 | 2020-03-03 | 天工方案公司 | Multilayer piezoelectric substrate |
-
2022
- 2022-01-07 CN CN202210012242.7A patent/CN114039573A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144507A (en) * | 1976-09-29 | 1979-03-13 | Texas Instruments Incorporated | Surface acoustic wave resonator incorporating coupling transducer into reflecting arrays |
| JPH1197973A (en) * | 1997-09-24 | 1999-04-09 | Murata Mfg Co Ltd | Surface wave device |
| CN1498455A (en) * | 2002-03-06 | 2004-05-19 | ���µ�����ҵ��ʽ���� | Surface acoustic wave filter, balance type circuit and communication apparatus |
| CN101939911A (en) * | 2008-02-05 | 2011-01-05 | 株式会社村田制作所 | Boundary acoustic wave device |
| CN204615783U (en) * | 2012-08-29 | 2015-09-02 | 株式会社村田制作所 | Acoustic wave device and filter apparatus |
| CN109983696A (en) * | 2016-11-25 | 2019-07-05 | 株式会社村田制作所 | Acoustic wave filter device |
| CN108121889A (en) * | 2018-02-11 | 2018-06-05 | 海宁市瑞宏科技有限公司 | A kind of SAW filter resonator structure with horizontal mould inhibition |
| CN110858763A (en) * | 2018-08-22 | 2020-03-03 | 天工方案公司 | Multilayer piezoelectric substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117097293A (en) * | 2023-08-24 | 2023-11-21 | 常州承芯半导体有限公司 | Surface acoustic wave resonator device, filter, duplexer, and method of forming surface acoustic wave resonator device |
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