CN114038927B - 一种高响应的铁电集成石墨烯等离子体太赫兹探测器 - Google Patents
一种高响应的铁电集成石墨烯等离子体太赫兹探测器 Download PDFInfo
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Abstract
本发明属于光电通信技术领域，具体涉及一种高响应的铁电集成石墨烯等离子体太赫兹探测器。解决了传统硅基器件平行石墨烯纳米带之间的电磁波传导困难的问题，主要方案包括以钛酸锶为基底，以镧锶锰氧为底电极，利用外延法在底电极上生长一层铁酸铋BFO，利用压电力显微镜或水印法获得两条平行的矩形局域极化电畴，然后在铁酸铋BFO上覆盖一层本征石墨烯，通过对底电极施加不同栅压，从而调整覆盖在矩形局域极化电畴上的石墨烯化学势，进而调整太赫兹探测器的吸收波段。
Description
技术领域
本发明属于光电通信技术领域，具体涉及一种太赫兹光电探测器。尤其涉及一种基于铁电基底的石墨烯太赫兹探测器的结构设计。
背景技术
太赫兹(THz)波是指频率在0.1～10THz(波长为3000～30μm)范围内的电磁波。是宏观经典理论向微观量子理论的过渡区，也是电子学向光子学的过渡区。由于过去缺乏高灵敏度的探测器和相对有效的太赫兹源，这一波段也被称为称为电磁波谱的“太赫兹空隙(THz gap)”。由于太赫兹可用带宽较大，可以实现超高速率的无线数据传输，并且在传感领域也有较大的应用可能性，近年来，对于太赫兹波段探测的研究持续发展革新，许多不同的高灵敏探测器以及太赫兹源被提出，为太赫兹研究道路提供了有意义的借鉴。
在红外(IR)和太赫兹(THz)范围内，当石墨烯与入射光相互作用时，出现表面等离子体激元(SPPs)和局域表面等离子体激元(LSPs)。SPP是在材料边界处激发的表面波；这些电荷波的激发是通过适当匹配***的自由空间和表面等离激元动量来实现的。另一方面，LSP是支撑在材料中的亚波长表面波，其特征尺寸与激发波长相当。后者有助于吸收机制，并导致吸收的增强。过去几年，石墨烯基吸收剂(GBA)备受关注。柯等人，报道了实现20％吸收的十字形石墨烯阵列吸收器；肖等人，提出了周期性石墨烯环阵列，并引入了良好的角极化容限，实现了25％的吸收；方等人，通过将石墨烯纳米盘阵列纳入有源器件达到30％的吸收。虽然单层石墨烯的最大吸收量相比其前辈有了很大的提高，但最大吸收量不超过30％。因此，设计一种具有较高吸光度的石墨烯吸收剂是一个亟待解决的问题。
发明内容
本发明的在于解决传统硅基器件平行石墨烯纳米带之间的电磁波传导困难的问题，进而实现了两条高化学势石墨烯纳米带激发的等离激元作用的耦合。
针对石墨烯光吸收低以及远红外波段探测困难的问题，本发明提出一种铁电基上的两条平行高化学势石墨烯纳米带作为探测敏感层的太赫兹吸收结构，该器件在谐振频率为3.85THz处具有超高响应度(23.21A/W)。器件的表面单胞结构由两条平行对称的高化学势石墨烯纳米带和其周围的本征石墨烯组成。
本发明为了解决上述技术问题，采用以下技术手段：
一种高响应的铁电集成石墨烯等离子体太赫兹探测器，以钛酸锶(STO)为基底，以镧锶锰氧(LSMO)为底电极，利用外延法在底电极上生长一层铁酸铋BFO，利用压电力显微镜(PFM)或水印法获得两条平行的矩形局域极化电畴，然后在铁酸铋BFO上覆盖一层本征石墨烯，通过对底电极施加不同栅压，从而调整覆盖在矩形局域极化电畴上的石墨烯化学势，进而调整太赫兹探测器的吸收波段。
上述技术方案中，两条平行的矩形局域极化电畴的长为0.5um，宽为0.1um，间隔为0.5um。
上述技术方案中，铁酸铋上覆盖的本征石墨烯的边长为1um。
上述技术方案中，覆盖在矩形局域极化电畴上的石墨烯的化学势为0.4eV。
上述技术方案中，未覆盖在矩形局域极化电畴上的石墨烯的化学势为0.01eV。
本发明的优点主要有：
1.本发明证明了双条特殊条带状石墨烯可在特定的铁电畴的影响下，体现出对远红外段具有高响应的特性。
2.本发明方法具有通用性，适用于所有铁电材料的极化对图案化石墨烯在光吸收方面的影响。
3.本发明采用在本征石墨烯内部引入两条平行高化学势石墨烯纳米带的方法，解决了传统硅基器件平行石墨烯纳米带之间的电磁波传导困难的问题，进而实现了两条高化学势石墨烯纳米带激发的等离激元作用的耦合。
4.本发明的采用两条平行高化学势石墨烯纳米带解决了传统硅基器件平行石墨烯纳米带之间的电磁波传导困难的问题，实现了两条平行高化学势石墨烯纳米带激发的等离激元作用的耦合，从而增强局域表面激元，在太赫兹波段增加了光吸收。由于常规器件石墨烯下面就是基底，两个石墨烯纳米带之间的电磁波传导需要增加一个石墨烯图案来连接从而产生损耗或者制作成本。而铁电基底的极化调控可以不需要做传导图案，只需要在特定的区域添加极化获得高化学势石墨烯区域。
5、本发明的两条平行高化学势石墨烯纳米带相比与方块形，矩形短边边缘激发的等离激元作用也会产生耦合，相互增强，而方块形边长较长，对角处激发的等离激元作用难以耦合。与扇形相比，矩形结构更简单，可调的图案参数基本一致，且不需要制作中间的三角形图案作为传导，而三角形图案光刻机的精度要求很高的，特别是顶点位置。
附图说明
图1为仿真器件的结构图以及BFO畴的形状示意图
图2-图5为在固定铁电畴的形状和大小以及向下极化区域石墨烯化学势为0.01eV的条件下，向上极化区域的石墨烯电化学势分别为0.4eV、0.6eV、0.7eV、0.8eV对应的太赫兹波段光吸收的曲线。
图6-图7为在极化方向向上的铁电畴长0.5um宽0.1um,间隔为0.5um，石墨烯电化学势为0.4eV，0.8eV；以及极化方向向下的铁电畴边长1um，石墨烯化学势为0.01eV时，不同电场分布图。
具体实施方式
为了便于理解，下面结合附图对本发明作进一步的说明。所描述的实例是本发明的一部分参数实例。基于本发明中的实例，本领域普通方法人员在没有做出创造性劳动的前提下获得的所有其他实例，都属于本发明的保护范围。
本发明提供了一种基于铁电材料和石墨烯的光电探测器，包括：以钛酸锶(STO)为基底，以镧锶锰氧(LSMO)为底电极，利用外延法生长一层BFO。
铁酸铋BFO为铁电材料，利用压电力显微镜(PFM)或水印法获得两条平行的矩形局域极化电畴。
单层石墨烯层，转移至极化的铁酸铋BFO之上。
利用FDTD solution仿真软件，设计器件结构和石墨烯的图案化。通过设置光源，放置监视器，计算设计器件整体的透射率、反射率、吸收率、以及表面电场强度分布情况。
更具体地，在模型中铁电畴的表现形式为石墨烯电化学势的高低变化，而铁电畴形状的变化体现在不同电化学势石墨烯的形状不同。
图1为器件的结构图以及单位BFO铁电畴的形状图。图1上图的结构中，从下至上分别为STO、LSMO、BFO，器件表面覆盖一层石墨烯。图1中可见单胞铁电畴的结构图，由两条平行对称的高化学势石墨烯纳米带和其周围的本征石墨烯组成。白色区域是高石墨烯化学势(极化方向向上)区域(两条平行对称的高化学势石墨烯纳米带)，黑色区域是本征石墨烯(极化方向向下)区域。通过利用FDTD solution仿真软件，改变不同区域与的石墨烯化学势，来实现不同的极化方向带来的影响。设置白色区域长为0.5um，宽为0.1um，间隔为0.5um，黑色区域边长为1um，材料分别设置为高化学势石墨烯以及本征化学势石墨烯，以实现黑色包裹白色区域的结构。仿真区域长宽(X,Y方向)均为1um，X,Y方向的边界条件为周期性边界条件，这样只计算一个单位区域就可以模拟大范围阵列耦合结构。Z方向的边界条件为PML，可以吸收所有电磁波。
图2为固定上述器件结构参数的情况下，不同石墨烯化学势对应的太赫兹波段吸收曲线。自上至下分别为0.4eV，0.6eV，0.7eV，0.8eV的石墨烯化学势对应的太赫兹波段吸收图。将向下极化区域(黑色区域)的石墨烯化学势设为0.01eV，向上极化区域(白色区域)的石墨烯化学势分别设为0.4eV、0.6eV、0.7eV、0.8eV。可以看出通过在底电极施加不同栅压调整不同的石墨烯化学势可以对器件的光吸收波段区域和强度进行调控，其中，随着石墨烯化学势的增加，吸收峰左移，0.4eV化学势下，光吸收峰最强。
图3为固定上述器件结构参数的情况下，不同石墨烯化学势对应的器件表面电场分布图。自上至下分别为0.4eV，0.8eV的石墨烯化学势对应的电场分布图。由图可见，电场最强的位置在白色条带与黑色区域交界处的两端，从而证实了该结构可以实现局域表面等离激元，从而增强石墨烯的光吸收能力。而不同的化学势不会影响局域表面等离激元的作用区域，只会影响强度，从而不影响吸收机制，证实了调控作用。
由上述图片可知，可以通过使用不同的铁电材料，施加不同的栅压来改变器件对光的选择性吸收。并利用上述器件结构，增强器件的光吸收强度。
Claims (4)
1.一种高响应的铁电集成石墨烯等离子体太赫兹探测器，其特征在于，以钛酸锶为基底，以镧锶锰氧为底电极，利用外延法在底电极上生长一层铁酸铋BFO，利用压电力显微镜或水印法获得两条平行的矩形局域极化电畴，然后在铁酸铋BFO上覆盖一层本征石墨烯，形成具有可调控的铁电极化基底、一对石墨烯纳米条带结构和间隔区域，利用铁电基底极化调节石墨烯的化学势，依靠铁电畴图案化的石墨烯条带结构，高导电本征石墨烯间隔区域以及可调控石墨烯等离激元耦合效应探测太赫兹波。
2.如权利要求1所述的一种高响应的铁电集成石墨烯等离子体太赫兹探测器，其特征在于，所述的图案化由一对平行对称的高化学势石墨烯纳米带和其周围的本征石墨烯组成。
3.如权利要求2所述的一种高响应的铁电集成石墨烯等离子体太赫兹探测器，其特征在于，石墨烯纳米条带长为0.5μm，宽为0.1μm，石墨烯电化学势为0.4eV或0.8eV。
4.如权利要求2所述的一种高响应的铁电集成石墨烯等离子体太赫兹探测器，其特征在于，本征石墨烯的边长为1μm，石墨烯的化学势为0.01eV。
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