CN114035256B - Large-angle incidence range long-wave pass filter and preparation method thereof - Google Patents
Large-angle incidence range long-wave pass filter and preparation method thereof Download PDFInfo
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- CN114035256B CN114035256B CN202111426565.2A CN202111426565A CN114035256B CN 114035256 B CN114035256 B CN 114035256B CN 202111426565 A CN202111426565 A CN 202111426565A CN 114035256 B CN114035256 B CN 114035256B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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Abstract
The application provides a large-angle incidence range long-wave pass filter and a preparation method thereof, wherein the large-angle incidence range long-wave pass filter comprises a first filter and a second filter; the first optical filter includes: a first substrate; the first film is prepared on the surface of the first substrate and comprises a high refractive index material and a low refractive index material; the second filter includes: the second substrate is a silicon wafer; a second film comprising a high refractive index material, prepared on a side of the second substrate relatively close to the first substrate; a third film comprising a high refractive index material disposed on a side of the second substrate opposite the second film; and the colloid is arranged between the second film and the first substrate and is used for gluing the first optical filter and the second optical filter, and under the premise of ensuring the transmittance, the absorption characteristic of the silicon wafer is utilized to filter the short wave light in a specific range, so that the transmittance of the specific long wave in a large-angle incidence range and the cutoff rate of the specific short wave are realized.
Description
Technical Field
The application relates to the technical field of optical films, in particular to a long-wave pass filter with a large angle incidence range and a preparation method thereof.
Background
The laser has the characteristics of directionality, monochromaticity, high brightness, coherence and the like, can effectively realize long-distance transmission with high energy, has a small atmospheric attenuation coefficient of 1064nn laser, is mature and reliable in YAG laser technology working in the wave band, and has very wide application in the national defense fields of laser ranging, laser guidance, photoelectric countermeasure and the like.
The large-angle incidence range long-wave pass filter is required to ensure that the spectrum radiation with the incidence angle range of 1064nm of 0-48 degrees enters the corresponding detector, and the spectrum of 400-930nm is filtered.
At present, the development of a long-wave pass filter with a large incident angle range is mainly realized by utilizing the intrinsic absorption effect of materials. Because of the long-wave-pass characteristic of the material from opaque to transparent in the intrinsic absorption limit, the material can be used as a substrate or a film material in the practical filter design. The existing material can only meet the transmittance requirement of the optical filter 1064nm when the cut-off wavelength of silicon (Si) is 1000nm, but the transmittance of 0.3mm silicon is 35.6% at 1064nn, the absorption reaches 20%, the thickness of a silicon plate is less than 0.2mm (absorption 13.5%), and the plate with the thickness has low plate strength and cannot be used. If Si is used as a coating material to be deposited on an H-K9L glass substrate, the thickness of a silicon film is not less than 0.1mm in order to obtain the effective cut-off degree of 400nm-930nm, and the film adhesion, the film quality, the film stress and the like of the thickness have problems, so that the process cannot be realized.
Disclosure of Invention
In view of the foregoing drawbacks or shortcomings of the prior art, the present application is directed to a long-pass filter with a large angle incidence range and a method for manufacturing the same.
In a first aspect, the present application provides a long-wave pass filter with a large angle incidence range, including:
a first filter, the first filter comprising:
a first substrate;
the first film is prepared on the surface of the first substrate and comprises a high refractive index material and a low refractive index material;
a second filter, the second filter comprising:
the second substrate is a silicon wafer;
a second film comprising a high refractive index material prepared on a side of the second substrate relatively close to the first substrate;
a third film comprising a high refractive index material prepared on a side of the second substrate relatively away from the first substrate;
and the colloid is arranged between the first film and the first substrate and is used for gluing the first optical filter and the second optical filter.
According to the technical scheme provided by the embodiment of the application, the first basic film system structure of the first optical filter is as follows:
A/αH 1 βL/S 1
wherein A representsAir, H 1 Represents the high refractive index material, L represents the low refractive index material, S 1 And alpha and beta represent the first substrate, and the optical thickness of the alpha and beta is 1/4 wavelength.
According to the technical scheme provided by the embodiment of the application, the second basic film system structure of the second optical filter is as follows:
A/γH 2 /S 2 /ηH 3
wherein H is 2 S being the high refractive index material of the second film 2 For the silicon wafer, H 3 And gamma, eta are 1/4 wavelength optical thickness for the high refractive index material of the third film.
According to the technical scheme provided by the embodiment of the application, the thickness of the silicon wafer is 0.2mm.
According to the technical scheme provided by the embodiment of the application, the H is as follows 1 Is a high refractive index material H4, and the L is a low refractive index material SiO 2 The S is 1 Is H-K9L glass.
According to the technical scheme provided by the embodiment of the application, the H is as follows 2 And H 3 Is the high refractive index material H4.
According to the technical scheme provided by the embodiment of the application, the preparation methods of the first film, the second film and the third film are ion beam assisted electron beam evaporation methods.
In a second aspect, the present application provides a method for preparing the long-wave pass filter with a large angle incidence range, which includes the following steps:
setting a first substrate;
setting a reference wavelength of the large-angle incidence range;
constructing a first basic film system structure:
calculating and optimizing the transmittance of the first basic film system structure at the reference wavelength to obtain a first optimized film system structure;
preparing a first film with the first optimized film system structure on the surface of the first substrate to obtain a first optical filter;
setting a silicon wafer as a second substrate;
setting a target cut-off wavelength of the large-angle incidence range;
constructing a second basic film system structure;
calculating and optimizing the transmittance of the second basic film system structure at the reference wavelength to obtain a second optimized film system structure;
preparing a second film with the second optimized film structure on the second substrate to obtain a second optical filter;
and gluing the first optical filter and the second optical filter to obtain a final optical filter.
According to the technical scheme provided by the embodiment of the application, the second optimized film system structure comprises a second film and a third film which are prepared on the two sides of the second substrate and are made of high-refraction materials.
In summary, the application provides a long-wave pass filter with a large angle incidence range, which comprises a first filter and a second filter, wherein the transmittance of the first filter is improved by preparing a first film comprising a high refractive index material and a low refractive index film material on the surface of a first substrate, and the transmittance of a specific long-wave light with a large angle incidence range and the cutoff of a specific short wave are realized by plating a second film and a third film with the high refractive index material on the two sides of a silicon wafer.
Drawings
Fig. 1 is a schematic structural diagram of a long-wave pass filter with a large incident range according to an embodiment of the present application;
fig. 2 is a flowchart of a method for preparing a long-wave pass filter with a large angle incidence range according to an embodiment of the present application:
fig. 3 is a spectrum chart of a long-wave pass filter with a large incident range according to an embodiment of the present application.
Detailed Description
The application is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be noted that, for convenience of description, only the portions related to the application are shown in the drawings.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
Example 1
As mentioned in the background art, in order to solve the problems in the prior art, the present application provides a long-wave pass filter with a large angle incidence range, as shown in fig. 1, including:
a first filter, the first filter comprising:
a first substrate;
the first film is prepared on the surface of the first substrate and comprises a high refractive index material and a low refractive index material;
a second filter, the second filter comprising:
the second substrate is a silicon wafer;
a second film comprising a high refractive index material prepared on a side of the second substrate relatively close to the first substrate;
a third film comprising a high refractive index material prepared on a side of the second substrate relatively away from the first substrate;
and the colloid is arranged between the first film and the first substrate and is used for gluing the first optical filter and the second optical filter.
The transmittance of the first optical filter is improved by preparing the first film comprising the high refractive index material and the low refractive index film material on the surface of the first substrate, and the transmittance of the specific range short wave light is filtered by plating the second film and the third film with the high refractive index material on the two sides of the silicon wafer on the premise of ensuring the transmittance, so that the transmittance of the specific long wave in a large angle incidence range and the cutoff of the specific short wave are realized.
Further, the first basic film structure of the first optical filter is:
A/αH 1 βL/S 1
wherein A represents air, H 1 Represents the high refractive index material, L represents the low refractive index material, S 1 And alpha and beta represent the first substrate, and the optical thickness of the alpha and beta is 1/4 wavelength.
Preferably, the H 1 Is a high refractive index material H4, and the L is a low refractive index material SiO 2 The S is 1 The glass is H-K9L glass, the thickness is 2mm, the diameter is 30mm, the surface aperture N is less than or equal to 4, the local aperture delta N is less than or equal to 1, the non-parallelism is less than 1', and the surface finish degree B=V.
Further, the second basic film structure of the second optical filter is:
A/γH 2 /S 2 /ηH 3
wherein H is 2 S being the high refractive index material of the second film 2 For the silicon wafer, H 3 And gamma, eta are 1/4 wavelength optical thickness for the high refractive index material of the third film.
Preferably, the thickness of the silicon wafer is 0.2mm, the silicon wafer has the functions of cutting off unnecessary wave bands and improving the absorption rate of the unnecessary wave bands, so that the thickness of the silicon wafer is required, if the thickness is too thick, the transmittance is influenced, if the thickness is too thin, the processing is not easy, and in addition, the bonding is relatively laborious. In order to ensure the transmittance and the cut-off rate, the thickness of the silicon wafer is set to be 0.2mm, the diameter of the silicon wafer is 29.2mm, the surface aperture N is less than or equal to 4, the local aperture delta N is less than or equal to 1, the non-parallelism is less than 3', and the surface finish degree B=V; preferably, the H 2 And H 3 Is the high refractive index material H4.
Further, the preparation methods of the first film, the second film and the third film are ion beam assisted electron beam evaporation methods. Common coating processes for optical materials include: the ion beam assisted electron beam evaporation method selected in the embodiment has the advantages of high evaporation rate, accurate positioning, simple process, low coating cost, capability of avoiding evaporation and pollution of crucible materials, and the like.
Example 2
The application provides a preparation method of the long-wave pass filter with the large angle incidence range, which comprises the following steps:
setting a first substrate; in this embodiment, the first substrate is H-K9L glass.
Setting a reference wavelength of the large-angle incidence range; the incident angle range is 0-48 degrees, and the reference wavelength is 1064nm.
Constructing a first basic film system structure:
A/αH 1 βL/S 1
wherein A represents air, H 1 Represents a high refractive index material H4, L represents the low refractive index material SiO 2 ，S 1 Representing the first substrate H-K9L glass, and alpha and beta are 1/4 wavelength optical thickness.
Calculating and optimizing the transmittance of the first basic film structure at the reference wavelength to obtain a first optimized film structure; based on a numerical optimization algorithm, obtaining alpha and beta of the first basic film system structure, wherein the first optimized film system structure is as follows: A/0.53H 1 1.35L/S 1
Preparing a film with the first optimized film structure on the surface of the first substrate to obtain a first optical filter;
setting a silicon wafer as a second substrate; since the light transmittance of the cut-off band is reduced in addition to the desired light transmittance, the spectrum of 400nm to 930nm is filtered out in this embodiment, and the thickness of the silicon wafer is selected to be 0.2mm in order to obtain an effective cut-off rate in the 400nm to 930nm band.
Constructing a second basic film system structure:
A/γH 2 /S 2 /ηH 3
wherein H is 2 And H 3 Is a high refractive index material H4, S 2 Is the silicon wafer.
Calculating and optimizing the transmittance of the second basic film system structure at the reference wavelength to obtainA second optimized film system structure; specifically, the second optimized film structure includes a second film and a third film with high refraction materials, wherein the second film and the third film are prepared on two sides of the second substrate, and gamma and eta of the second basic film structure are obtained based on a numerical optimization algorithm, so that the second optimized film structure is A/1.06H 2 /S 2 /1.06H 3 。
And preparing a film with the second optimized film structure on the surface of the second substrate to obtain a second optical filter.
The steps for preparing thin film deposition on the first substrate H-K9L glass and the second substrate silicon wafer are as follows:
1. vacuum chamber cleaning: firstly, cleaning a vacuum chamber protective screen, an electrode, a baffle plate and a tool of a film plating machine by using a sand blasting machine, wherein after cleaning, a film layer cannot be attached to the surface of a cleaned piece;
2. cleaning before film coating: sequentially dipping absorbent gauze and absorbent cotton cloth in a mixed solution of ethanol and diethyl ether (1:1) to wipe the surface of the vacuum chamber, and checking the surface by a 'gas-cutting method' until no greasy dirt, dust particles and scratches exist;
3. vacuum chamber preparation: placing a proper amount of high refractive index material H4 and low refractive index material silicon dioxide into an electron gun crucible (for a 1000mm film plating machine, H4 and SiO2 are respectively 100g and 150 g), blowing the surface of a substrate by using an ear washing ball, and immediately closing a vacuum chamber door;
4. the first optical filter film layer is plated with: the vacuum degree in the vacuum chamber is not lower than 2 multiplied by 10 < -3 > Pa, a rotary switch is turned on, a rotary working frame is turned on, baking is performed, the baking temperature is set, and then an electron gun deflection power supply, a filament power supply and gun high voltage are sequentially turned on; opening an ion source, cleaning a substrate for 5min by using an ion beam, wherein the ion source adopts argon as working gas, the purity of the working gas is not less than 99.995%, the gas flow is 18sccm-22sccm (the optimal value is 20 sccm), and performing film deposition by using an ion beam assisted electron beam evaporation method; heating the substrate H-K9L glass to 250+/-10 ℃ and keeping for 1H; h according to the first optimized film system structure 4 And SiO 2 Alternately evaporating to the firstThe coating surface of the substrate.
Wherein, the deposition parameters of the coating material are as follows, for H4 film deposition: the argon gas flow of the ion source is 18+/-2 sccm, the oxygen gas flow is 25+/-3 sccm, the ion source beam pressure is 180-250V, the ion source beam current is 80-120V, the electron gun current is regulated, the film material is fully and uniformly pre-melted, a baffle is opened, and the deposition rate is controlled to be 0.2-0.5nm/s; the process parameter is adopted to deposit the H4 film, so that the aggregation density of the film layer can be improved, the absorption and scattering loss of the film layer is small, and the film layer has strong adhesive force; for SiO 2 Film deposition: 18+/-2 sccm of argon gas flow of an ion source, 12+/-2 sccm of oxygen gas flow, 180-220V of beam pressure of the ion source, 80-110V of beam pressure of the ion source, adjustment of current of an electron gun, full and uniform pre-melting of a film material, opening of a baffle plate and 0.5-1nm/s of deposition rate; by adopting the process parameter to deposit the SiO2 film, the aggregation density of the film layer can be improved, and the environmental adaptability of the silicon dioxide film can be improved.
5. The first substrate is cooled: in vacuum of not less than 2X 10 -3 Pa, cooling to 80+/-8 ℃, closing the vacuumizing system, and taking out the first optical filter after the vacuum chamber is cooled to room temperature;
6. the second optical filter film layer is plated with: and (3) repeating the steps 1-4, wherein in the fourth step, only H4 is plated on two sides of the second substrate silicon wafer according to the second optimized film system structure. And cooling the second substrate after plating is completed, and taking out the plated second optical filter.
Gluing the first filter and the second filter to obtain a final filter, the gluing comprising the steps of:
1. preparation: the gluing work is kept clean, and air flow is reduced as much as possible during the work; the bonding surface is cleaned by dipping the cotton cloth in the mixed solution of ethanol and ethanol (1:1), and the bonding surface is inspected by a magnifying glass under the transmitted light until the bonding surface meets the requirement; preparing the substrate aperture pairing, wherein the aperture high and the aperture low are matched together in principle;
2. and (3) gluing: and dipping a proper amount of epoxy glue on the bonding surface by using a clean glass rod, slightly rotating and swinging the bubbles and redundant glue on the glue layer by force after bonding the silicon wafer and the H-K9L substrate, ensuring that bubbles, impurities and the like cannot exist in the glue layer, ensuring that the thickness of the glue layer is uniform, and wiping the redundant glue on the edge by using absorbent cotton cloth.
3. Curing: and placing the glued optical filter at normal temperature for 72 hours for curing.
As shown in FIG. 3, the abscissa is the wave band, the ordinate is the transmittance, the average transmittance of the final filter in the pass band reaches 83%, the average transmittance of the cut-off band 400-930nm is less than 0.5%, the spectral range can be limited to inhibit the background interference, and the target resolution is improved.
The principles and embodiments of the present application have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present application and its core ideas. The foregoing is merely illustrative of the preferred embodiments of this application, and it is noted that there is objectively no limit to the specific structure disclosed herein, since numerous modifications, adaptations and variations can be made by those skilled in the art without departing from the principles of the application, and the above-described features can be combined in any suitable manner; such modifications, variations and combinations, or the direct application of the inventive concepts and aspects to other applications without modification, are contemplated as falling within the scope of the present application.
Claims (4)
1. The utility model provides a wide-angle incidence scope long wave pass filter which characterized in that: comprises a first optical filter and a second optical filter; the first filter includes:
a first substrate;
the first film is prepared on the surface of the first substrate and comprises a high refractive index material and a low refractive index material;
the second filter includes:
the second substrate is a silicon wafer;
a second film comprising a high refractive index material prepared on a side of the second substrate relatively close to the first substrate;
a third film comprising a high refractive index material prepared on a side of the second substrate relatively away from the second film;
the colloid is arranged between the second film and the first substrate and is used for gluing the first optical filter and the second optical filter;
the first basic film system structure of the first optical filter is as follows:
A/αH 1 βL/S 1
wherein A represents air, H 1 Represents the high refractive index material, L represents the low refractive index material, S 1 Representing the first substrate, wherein alpha and beta are 1/4 wavelength optical thickness;
the second basic film system structure of the second optical filter is as follows:
A/γH 2 /S 2 /ηH 3
wherein H is 2 S being the high refractive index material of the second film 2 For the silicon wafer, H 3 γ, η are 1/4 wavelength optical thickness for the high refractive index material of the third film;
the thickness of the silicon wafer is 0.2mm; the H is 1 Is a high refractive index material H4, and the L is a low refractive index material SiO 2 The S is 1 Is H-K9L glass; the H is 2 And H 3 Is the high refractive index material H4.
2. The high angle incidence range long-pass filter according to claim 1, wherein: the preparation methods of the first film, the second film and the third film are ion beam assisted electron beam evaporation methods.
3. A method for manufacturing a long-wave pass filter with a large angle incidence range according to any one of claims 1 to 2, comprising the steps of:
setting a first substrate;
setting a reference wavelength of the large-angle incidence range;
constructing a first basic film system structure:
calculating and optimizing the transmittance of the first basic film structure at the reference wavelength to obtain a first optimized film structure;
preparing a film with the first optimized film structure on the surface of the first substrate to obtain a first optical filter;
setting a silicon wafer as a second substrate;
constructing a second basic film system structure;
calculating and optimizing the transmittance of the second basic film system structure at the reference wavelength to obtain a second optimized film system structure;
preparing a film with the second optimized film structure on the second substrate to obtain a second optical filter;
and gluing the first optical filter and the second optical filter to obtain a final optical filter.
4. The method for manufacturing a long-wave pass filter with a large angle incidence range according to claim 3, wherein: the second optimized film system structure comprises a second film and a third film which are prepared on the two sides of the second substrate and provided with high-refraction materials.
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| CN111736252A (en) * | 2020-06-05 | 2020-10-02 | 浙江晶驰光电科技有限公司 | Near-infrared transmission optical filter and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6035768B2 (en) * | 2012-02-16 | 2016-11-30 | セイコーエプソン株式会社 | Interference filters, optical modules, and electronics |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106291793A (en) * | 2016-11-04 | 2017-01-04 | 天津津航技术物理研究所 | A kind of short-wave infrared narrow band pass filter and preparation method thereof |
| CN107479191A (en) * | 2017-08-15 | 2017-12-15 | 天津津航技术物理研究所 | A kind of the laser rectangle optical filter and design method of visible optical depth cut-off |
| CN110146948A (en) * | 2018-11-26 | 2019-08-20 | 上海欧菲尔光电技术有限公司 | A kind of silicon base long wave leads to infrared fileter and preparation method thereof |
| CN111736252A (en) * | 2020-06-05 | 2020-10-02 | 浙江晶驰光电科技有限公司 | Near-infrared transmission optical filter and preparation method thereof |
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