CN114032516A - Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment - Google Patents

Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment Download PDF

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Publication number
CN114032516A
CN114032516A CN202110769415.5A CN202110769415A CN114032516A CN 114032516 A CN114032516 A CN 114032516A CN 202110769415 A CN202110769415 A CN 202110769415A CN 114032516 A CN114032516 A CN 114032516A
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magnets
cathode target
magnet
yoke
source module
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CN114032516B (en
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李兵兵
杨顺贵
黄国栋
黄嘉宏
杨涛
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The application relates to a magnetic source module for magnetron sputtering equipment and the magnetron sputtering equipment, wherein the magnetic source module comprises a magnet module; the magnet module is rotatably arranged on the back of a cathode target of the magnetron sputtering equipment; the magnet module comprises a plurality of first magnets and a plurality of second magnets, wherein the polarities of one ends of the first magnets, which face away from the cathode target, are opposite to that of one ends of the second magnets, which face away from the cathode target. One part of the first magnets is a first electromagnet, and the other part of the first magnets is a first permanent magnet; and one part of the plurality of second magnets is a second electromagnet, and the other part of the plurality of second magnets is a second permanent magnet. The permanent magnet can generate a magnetic field without external intervention, so that the installation is convenient and the cost is lower; the size of the magnetic field can be controlled by changing the current supplied to the electromagnet, and the uniformity of the coating can be improved; and because the quantity of the electromagnets is only one part of the whole magnets, the quantity of the used wire harnesses is small, the wire harnesses are arranged simply, the financial resources required for purchasing the wire harnesses are small, and the labor cost and the material cost of the whole equipment are reduced.

Description

Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment
Technical Field
The application relates to the field of Physical Vapor Deposition (PVD), in particular to a magnetic source module for magnetron sputtering equipment and the magnetron sputtering equipment.
Background
In recent years, with the continuous development of industries such as functional thin film preparation, wearable equipment, flexible display, solar energy and the like in China, the PVD film forming technology is concerned and has become a development hotspot in the related field of semiconductors. The magnetron sputtering technique has the advantages of low film forming temperature, good film forming compactness, high growth rate, convenient regulation and control of process parameters, environmental friendliness and the like, and is widely applied to the industries of Aluminum Nitride (AlN) piezoelectric films, conductive films, Indium Tin Oxide (ITO) films, solar cells and Light-emitting diodes (LEDs).
The existing magnetron sputtering system mainly comprises a cathode target material, a substrate and a permanent magnet assembly, and the working principle of the magnetron sputtering system is that negative bias voltage is applied to the cathode target material so that sputtering gas is broken down to generate glow discharge. Ionized gas ions (generally argon (Ar) ions) generated during the discharge process accelerate to bombard the surface of the target under the action of a high-energy electric field. The ionized gas ions bombard the target surface, so that the atoms on the surface of the target material are separated from the target surface to become sputtering atoms and are finally deposited on the surface of the substrate; and on the other hand, secondary electrons are emitted from the surface of the target material and enter the glow discharge plasma region, the secondary electrons entering the plasma region move under the constraint action of the target surface magnetic field and continuously collide with sputtering gas atoms to ionize the sputtering gas atoms, and the target material atoms are continuously sputtered to the substrate.
However, with the continuous development of high-end manufacturing in China, various related fields put forward higher requirements on the thickness uniformity of the film prepared by magnetron sputtering, however, the cost of the current magnetron sputtering system is very high in order to meet the requirement of the thickness uniformity.
Disclosure of Invention
In view of the above deficiencies of the prior art, the present application aims to provide a magnetic source module for a magnetron sputtering apparatus and a magnetron sputtering apparatus, which aims to reduce the cost of the whole magnetron sputtering system while solving the problem of uniformity of large-target multi-substrate coating.
The present application provides in a first aspect a magnetic source module for a magnetron sputtering apparatus, comprising: a magnet module; the magnet module is rotatably arranged on the back of the cathode target of the magnetron sputtering equipment; the magnet module comprises a plurality of first magnets and a plurality of second magnets, wherein the polarities of the ends of the first magnets, which face away from the cathode target, and the polarities of the ends of the second magnets, which face away from the cathode target, are opposite; one part of the first magnets is a first electromagnet, and the other part of the first magnets is a first permanent magnet; and one part of the second magnets is a second electromagnet, and the other part of the second magnets is a second permanent magnet.
According to the magnetic source module, the permanent magnet can generate a magnetic field without external intervention in a mode of combining the electromagnet and the permanent magnet, so that the magnetic source module is convenient to install and low in cost; the size of the magnetic field can be controlled by changing the current supplied to the electromagnet, so that the coating uniformity can be improved; and because the quantity of the electromagnets is only one part of the whole magnets, the quantity of the used wire harnesses is small, the wire harnesses are arranged simply, the financial resources required for purchasing the wire harnesses are small, and the labor cost and the material cost of the whole equipment are greatly reduced. In conclusion, the combination of the electromagnet and the permanent magnet can ensure the uniformity of the coating and reduce the cost of the whole equipment.
In some embodiments, at least some of the first plurality of electromagnets are disposed in series, and/or at least some of the second plurality of electromagnets are disposed in series. Therefore, the coating uniformity can be well adjusted in a short time, and the condition that the magnetic field intensity is not obviously adjusted due to the fact that the first electromagnet and/or the second electromagnet are not concentrated is prevented.
In some embodiments, at least some of the first plurality of electromagnets are disposed in correspondence with at least some of the second plurality of electromagnets such that a toroidal magnetic field is generated therebetween. Therefore, the density of Ar ions ionized at the corresponding position can be quickly adjusted, and the speed of adjusting the uniformity of the coating film is improved.
In some embodiments, the first plurality of magnets forms an inner ring magnet assembly around a ring, the second plurality of magnets forms an outer ring magnet assembly around a ring, and the outer ring magnet assembly surrounds the inner ring magnet assembly around a ring. The inner and outer circles of magnets are arranged, the magnets are distributed uniformly, the uniformity of the generated magnetic field is increased, and the uniformity of the coated film can be improved. The magnet which is wound into two circles is particularly suitable for equipment with a small type of cathode target, when the type of the cathode target is small, the magnet is wound into two circles, so that an annular magnetic field can be formed in an effective space by the magnet, and the magnetic field intensity is strong.
Wherein a center of rotation of the magnet module is located between the inner ring magnet assembly and the outer ring magnet assembly. When the magnet module rotates, the rotating center and the vicinity of the rotating center are always provided with a stable magnetic field, and the situation that the magnetic field and the non-magnetic field alternate along with the rotation does not occur, so that the cathode target is uniformly consumed, and the coating uniformity can be improved.
In other embodiments, a plurality of the first magnets and a plurality of the second magnets form a magnet ring around one ring. The circle of magnets are arranged, the magnets are distributed uniformly, the uniformity of a generated magnetic field is increased, and the uniformity of a coated film can be improved. The magnet which is wound into a circle is particularly suitable for equipment with a large type of cathode target material, when the type of the cathode target material is large, the magnet is wound into a circle, the arrangement is convenient, and the magnetic field intensity is strong.
Wherein, the rotation center of the magnet module is positioned in the magnet ring and staggered with the center of the magnet ring. When the magnet module rotates, the rotating center and the vicinity of the rotating center are always provided with a stable magnetic field, and the situation that the magnetic field and the non-magnetic field alternate along with the rotation does not occur, so that the cathode target is uniformly consumed, and the coating uniformity can be improved.
In some embodiments, a projection of the center of rotation of the magnet module on the cathode target is located in a central region of the cathode target; projections of the first electromagnets on the cathode target are positioned in the middle area of the cathode target and/or in the edge area of the cathode target; projections of the second electromagnets on the cathode target are positioned in the middle area of the cathode target and/or in the edge area of the cathode target; the central area of the cathode target surrounds the central area of the cathode target, and the edge area of the cathode target surrounds the central area of the cathode target.
Therefore, the coating uniformity of the middle area and/or the edge area of the substrate can be adjusted by changing the magnitude of the current supplied to the first electromagnet and/or the second electromagnet, so that the condition that the middle area and the edge area are easy to have unevenness is improved.
In some embodiments, the magnet module further comprises a first yoke and a second yoke; the first yoke has a first surface, the second yoke has a second surface, and the first surface and the second surface face each other; and two ends of the plurality of first magnets are fixedly connected with the first surface and the second surface respectively, and two ends of the plurality of second magnets are fixedly connected with the first surface and the second surface respectively. First yoke and second yoke do not produce the magnetic field itself, only play magnetic line transmission effect in the magnetic circuit, first yoke and second yoke can restrict the outer diffusion of induction coil magnetic leakage.
In some embodiments, one of the first and second yokes includes a first sub-yoke fixed to the plurality of first magnets and a second sub-yoke fixed to the plurality of second magnets. Therefore, the first magnet and the second magnet can be connected well, the size of the first sub-magnetic yoke and the size of the second sub-magnetic yoke can be smaller, resources are saved, and the weight of the whole magnetic source module is reduced.
In some embodiments, the magnetic source module further includes a balance plate parallel to the first surface, one side of the balance plate is fixedly connected to the first yoke or the second yoke, and the other side of the balance plate extends away from the first yoke. In order to prevent the magnetic source module from shaking during rotation and increase the accuracy of film coating, the balance plate is arranged and is more specifically fixed at the position, close to the rotating shaft, of the first magnetic yoke, so that the effect of balancing the magnetic source module is achieved.
The second aspect of the present application provides a magnetron sputtering device, including sputtering chamber and the magnetic source module of any one of the first aspect of the present application, the magnetic source module set up in the sputtering chamber. After the magnetron sputtering equipment applies the magnetic source module, the thickness of a coating film on the substrate can be uniform, and the consistency is high.
Drawings
Fig. 1 is a schematic structural diagram of a magnetic source module according to an embodiment of the present disclosure.
Fig. 2 is a schematic structural diagram of a usage state of the magnetic source module shown in fig. 1.
Fig. 3 is a schematic structural diagram of another usage state of the magnetic source module shown in fig. 1.
Fig. 4 is a schematic structural diagram of a magnetic source module according to another embodiment of the present application.
Fig. 5 is a schematic view of the correspondence between the magnetic source module and the cathode target shown in fig. 1.
Fig. 6 is a schematic structural view of a distribution of the first and second magnets shown in fig. 1.
Fig. 7 is a schematic view showing another arrangement of the first and second magnets shown in fig. 1.
Fig. 8 is a structural diagram illustrating still another distribution of the first and second magnets shown in fig. 1.
Fig. 9 is a schematic structural diagram of a magnetic source module according to yet another embodiment of the present application.
Fig. 10 is a schematic structural diagram of a magnetic source module according to still another embodiment of the present application.
Fig. 11 is a schematic structural view of the magnetic source module shown in fig. 1 in another direction.
Fig. 12 is a schematic structural view of the magnetic source module shown in fig. 1 in another direction.
FIG. 13 is a schematic view of the magnetic source module shown in FIG. 1.
Description of reference numerals: 100-magnet module, 110-first magnet, 111-first electromagnet, 112-first permanent magnet, 120-second magnet, 121-second electromagnet, 122-second permanent magnet; 130-first yoke, 131-first surface, 140-second yoke, 141-first partial yoke, 142-second partial yoke, 150-balance plate, 160-rotation axis, 200-cathode target, 300-substrate, a-center region, b-middle region, c-edge region, d-plasma region.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The magnetron sputtering device is a device commonly used in the PVD film forming technology, and the more specific working principle of magnetron sputtering is that electrons collide with Ar atoms in the process of flying to a substrate under the action of an electric field E, so that Ar positive ions and new electrons are generated by ionization of the Ar atoms. Wherein, new electrons fly to the substrate, Ar ions are accelerated to fly to the cathode target under the action of an electric field, and bombard the surface of the target at high energy, so that the cathode target is sputtered. In the sputtering particles, neutral target atoms or molecules are deposited on a substrate to form a thin film, and the generated secondary electrons are subjected to an electric field and a magnetic field to drift in a direction indicated by E (electric field) × B (magnetic field), which is abbreviated as E × B drift, and the motion trajectory of the E × B drift is similar to a cycloid. In the moving process, electrons are bound in a plasma area of the magnetic field, and a large amount of Ar ions are ionized in the plasma area to bombard a cathode target material, so that a film layer is deposited on the substrate. As the number of collisions increases, the energy of the secondary electrons is depleted, gradually moving away from the target surface and eventually depositing on the substrate under the influence of the electric field E.
The thickness of the film layer at the sputtering position on the substrate is not uniform by the prior art. Non-uniform thickness of the film layer on the substrate directly affects the product yield of the substrate and the service life of the final finished product. In order to solve the problems, the existing method of generating a magnetic field by an electromagnet is totally adopted, and the size of the magnetic field is changed by adjusting the current supplied to the electromagnet, so that the thickness of a coating film is adjusted, and the uniformity of the coating film is improved.
However, the electromagnet needs to be electrified to generate a magnetic field, and after the electromagnet is completely adopted, the number of wire harnesses for supplying power to the electromagnet is extremely large, so that not only is the space occupied, but also the whole magnetron sputtering equipment assembling process is very complicated and consumes a long time, and a large amount of financial resources are also needed for purchasing the wire harnesses, so that the labor cost and the material cost of the whole equipment are very high.
Referring to fig. 1 to 3, fig. 1 is a schematic structural diagram of a magnetic source module according to an embodiment of the present application, fig. 2 is a schematic structural diagram of a use state of the magnetic source module shown in fig. 1, and fig. 3 is a schematic structural diagram of another use state of the magnetic source module shown in fig. 1. In order to solve the above problem, an embodiment of the present application provides a magnetic source module for a magnetron sputtering apparatus, where the magnetic source module includes a magnet module 100; the magnet module 100 is rotatably disposed on the back of the cathode target 200 of the magnetron sputtering apparatus. The substrate 300 to be coated is typically located on the front side of the cathode target 200.
The magnet module 100 includes a plurality of first magnets 110 and a plurality of second magnets 120, and the polarities of the ends of the first magnets 110 facing away from the cathode target 200 and the polarities of the ends of the second magnets 120 facing away from the cathode target 200 are opposite. A part of the plurality of first magnets 110 is a first electromagnet 111, and the other part is a first permanent magnet 112; some of the second magnets 120 are second electromagnets 121, and the other are second permanent magnets 122.
Because the polarities of the first magnet 110 and the second magnet 120 are opposite, a magnetic induction circuit is generated between the first magnet 110 and the second magnet 120, the secondary electrons swing and revolve along the magnetic induction line, and a large amount of Ar ions are ionized in the plasma region d to bombard the cathode target 200, thereby depositing a film on the substrate 300. The magnet modules are rotationally arranged, so that magnetic induction loops formed by the magnet modules correspond to all areas of the cathode target 200, and the coating uniformity is improved.
The first permanent magnet 112 and the second permanent magnet 122 have constant magnetism by themselves; the first electromagnet 111 and the second electromagnet 121 need to be connected with a wire harness to supply power to the first electromagnet 111 and the second electromagnet 121, and the first electromagnet 111 and the second electromagnet 121 have magnetism after being supplied with power. The magnitude of the current directly affects the magnitude of the magnetic field of the first electromagnet 111, and of course, the magnitude of the current also directly affects the magnitude of the magnetic field of the second electromagnet 121. The larger the current, the larger the magnetic field generated, and the smaller the current, the smaller the magnetic field generated. The magnetic field directly influences the density of the formed magnetic field, the larger the magnetic field is, the larger the density of the formed magnetic field is, the larger the density of the confined secondary electrons is, the more Ar ions are ionized, and the consumed cathode target material 200 is correspondingly increased; the smaller the magnetic field, the smaller the density of the formed magnetic field, and the smaller the density of the confined secondary electrons, the less the ionized Ar ions, and the corresponding decrease in the consumed cathode target 200.
Therefore, by varying the magnitude of the current supplied to the first electromagnet 111 and varying the magnitude of the current supplied to the second electromagnet 121, the magnitude of the magnetic field generated by the entire magnet module 100 can be controlled, thereby improving the coating uniformity. Specifically, for example, when it is found that after the previous substrate 300 is coated, a film layer at a certain position is thinner than other positions, and then the next substrate 300 is coated, the current supplied to the first electromagnet 111 and the second electromagnet 121 is increased, so that the sputtered target atoms are increased, the thickness of the thin position of the film layer is compensated, and the coating uniformity is improved. Of course, by the same token, when it is found that after the previous substrate 300 is coated, a film layer at a certain position is thicker than other positions, and then the next substrate 300 is coated, the current supplied to the first electromagnet 111 and the second electromagnet 121 is reduced, so that the sputtered target atoms are reduced, the position where the film layer is thicker is thinned, and the coating uniformity is improved.
That is, the magnetic source module provided by the embodiment of the application is in a mode of combining the electromagnet and the permanent magnet, wherein the permanent magnet can generate a magnetic field without external intervention, the installation is convenient, and the cost is low; the intensity of the magnetic field density can be controlled by changing the current supplied to the electromagnet, and the uniformity of the coating film can be improved; and because the quantity of the electromagnets is only one part of the whole magnets, the quantity of the used wire harnesses is small, the wire harnesses are arranged simply, the financial resources required for purchasing the wire harnesses are small, and the labor cost and the material cost of the whole equipment are greatly reduced. In summary, the magnetic source module provided by the embodiment of the application can ensure the uniformity of the coating film and reduce the cost of the whole equipment in a mode of combining the electromagnet and the permanent magnet.
In the above embodiment, each of the first and second electromagnets 111 and 121 may be made as follows: the iron core is used as a battery core, and then the coil is wound outside to form the battery. The first and second permanent magnets 112, 122 may each be made as follows: the alloy is prepared by one or more of permanent magnets such as permanent magnetic ferrite, neodymium iron boron (NdFeB) based permanent magnet, samarium cobalt (SmCo) based permanent magnet, manganese bismuth (MnBi) and aluminum nickel cobalt (AlNiCo), of course, alloy materials can also be adopted, and the raw materials for preparing the alloy can be as follows: neodymium, samarium, pure iron, aluminum, ferroboron, etc., which are not limited in this embodiment.
It is of course to be understood that at least some of the plurality of first electromagnets 111 are arranged in series and at least some of the plurality of second electromagnets 121 are arranged in series. Therefore, the coating uniformity can be well adjusted in a short time, and the condition that the magnetic field density is not obviously adjusted due to the fact that the first electromagnet 111 and/or the second electromagnet 121 are not concentrated is prevented.
It will also be understood by those skilled in the art that at least a portion of the plurality of first electromagnets 111 and at least a portion of the plurality of second electromagnets 121 are disposed to correspond such that a toroidal magnetic field can be generated therebetween. Therefore, the sputtering density of target atoms at the corresponding position can be quickly adjusted, and the speed of adjusting the coating uniformity is improved.
It will be understood by those skilled in the art that smaller magnet assemblies may be used in the case of smaller cathode targets 200, and larger magnet assemblies may be used in the case of larger cathode targets 200 depending on the coating uniformity. Then, a circle of magnet may be provided for the small-sized cathode target 200; two turns of magnet may be provided for a large size cathode target 200.
Specifically, in some embodiments, the first plurality of magnets 110 form an inner ring magnet assembly around one turn, and the second plurality of magnets 120 form an outer ring magnet assembly around one turn, the outer ring magnet assembly surrounding the inner ring magnet assembly. That is, the first magnet 110 and the second magnet 120 are arranged in inner and outer circles, and the polarities of the same ends of the inner and outer circles are opposite, so that a toroidal magnetic field can be formed. Under the action of the annular magnetic field, secondary electrons make swinging and whirling motion on the target surface in an approximately cycloid form, the motion path of the secondary electrons is longer, the secondary electrons are constrained in a plasma region d close to the target surface, and a large amount of Ar ions are ionized in the plasma region d to bombard the target material, so that high deposition rate is realized.
The inner and outer circles of magnets are arranged, the magnets are distributed uniformly, the uniformity of the generated magnetic field is increased, and the uniformity of the coated film can be improved. The magnet which is wound into two circles is particularly suitable for equipment with a large type of the cathode target 200, when the type of the cathode target 200 is large, the magnet is wound into two circles, so that an annular magnetic field with large density can be formed in an effective space by the magnet, and the use requirement can be met.
Illustratively, the center of rotation of the magnet module 100 is located between the inner and outer ring magnet assemblies. Then, when the magnet module 100 rotates, the stable magnetic field is always present at the rotation center and near the rotation center, and the situation that the magnetic field and the non-magnetic field alternate with each other does not occur along with the rotation, so that the cathode target 200 is uniformly consumed, and the coating uniformity can be improved.
For example, the inner ring magnet assembly may be wound in any one of a circular shape, an elliptical shape, a kidney shape, and a heart shape, and the outer ring magnet assembly may be wound in any one of a circular shape, an elliptical shape, a kidney shape, and a heart shape. By adopting the shapes, when the magnet module 100 rotates, the magnetic field intensity of each part of the generated annular magnetic field can be distributed more uniformly, so that the condition of local stronger or local weaker is prevented, and the coating uniformity is improved.
The shapes of the inner ring magnet assembly and the outer ring magnet assembly which are encircled can be set to be different according to actual space, so that the space is better utilized. In order to better generate the annular magnetic field, the inner ring magnet assembly and the outer ring magnet assembly are selected to be wound in the same shape.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a magnetic source module according to another embodiment of the present application. In another embodiment, a plurality of the first magnets 110 and a plurality of the second magnets 120 form a magnet ring around one circle, and a plurality of the first magnets 110 are continuously arranged and a plurality of the second magnets 120 are continuously arranged. That is, the plurality of first magnets 110 and the plurality of second magnets 120 are formed in a circle, so that a ring-shaped magnetic field can be formed, and finally, the effect of improving the uniformity of the coated film can be achieved.
The circle of magnets are arranged, the magnets are distributed uniformly, the uniformity of a generated magnetic field is increased, and the uniformity of a coated film can be improved. The magnet which is wound into a circle is particularly suitable for equipment with a small size of the cathode target 200, when the size of the cathode target 200 is small, the magnet is wound into a circle, the arrangement is convenient, and the magnetic field density can meet the use requirement of the small size cathode target 200.
For example, the shape of the magnet ring can be any one of a circle, an ellipse, a kidney shape and a heart shape, and the magnet ring is configured into the above shapes, so that when the magnet module 100 rotates, the magnetic field strength of each part of the generated annular magnetic field can be distributed more uniformly, and the situation that the magnetic field strength is locally stronger or locally weaker is prevented, thereby increasing the coating uniformity.
Illustratively, the center of rotation of the magnet module 100 is located within the magnet ring and offset from the center of the magnet ring. Therefore, when the magnet module 100 rotates, the stable magnetic field is always present at the rotation center and the vicinity thereof, and the situation of non-uniform magnetic field along with the rotation is avoided, so that the cathode target 200 is uniformly consumed, and the coating uniformity can be improved.
It is understood that the first electromagnet 111 and the second electromagnet 121 may be disposed at any position, and of course, a plurality of the first electromagnets 111 are disposed at least partially in series and a plurality of the second electromagnets 121 are disposed at least partially in series. The density of atoms sputtered from the portions of the cathode target 200 corresponding to the first electromagnets 111 and/or the second electromagnets 121 can be adjusted, i.e., the thickness of the corresponding portions of the substrate 300 to be coated can be adjusted.
In practical use, the first electromagnet 111 and/or the second electromagnet 121 may be disposed according to a position on the substrate 300 where a problem easily occurs in the thickness of the film layer.
Referring to fig. 5 to 10, fig. 5 is a schematic diagram illustrating a corresponding relationship between the magnetic source module shown in fig. 1 and a cathode target, fig. 6 is a schematic diagram illustrating a distribution structure of the first magnet and the second magnet shown in fig. 1, fig. 7 is a schematic diagram illustrating another distribution structure of the first magnet and the second magnet shown in fig. 1, fig. 8 is a schematic diagram illustrating another distribution structure of the first magnet and the second magnet shown in fig. 1, fig. 9 is a schematic diagram illustrating a structure of a magnetic source module according to another embodiment of the present application, and fig. 10 is a schematic diagram illustrating a structure of a magnetic source module according to yet another embodiment of the present application.
It will also be understood by those skilled in the art that, since the non-uniformity of the film is likely to occur at the edge and middle positions of the substrate 300 after the coating process is completed, the plurality of first electromagnets 111 and/or the plurality of second electromagnets 121 may be disposed at the middle region b or the edge region c of the corresponding cathode plate.
That is, the projection of the rotation center of the magnet module 100 on the cathode target 200 may be located in the central region a of the cathode target 200. Projections of the plurality of first electromagnets 111 on the cathode target 200 are located in a middle region b of the cathode target 200 and/or in an edge region c of the cathode target 200; projections of the second electromagnets 121 on the cathode target 200 are located in a central region b of the cathode target 200 and/or in an edge region c of the cathode target 200. The central region b of the cathode target 200 surrounds the central region a of the cathode target 200, and the edge region c of the cathode target 200 surrounds the central region b of the cathode target 200.
Referring to fig. 5, the central region a, the middle region b, and the edge region c are sequentially radiated outward from the center of the cathode target 200. Taking the cathode target 200 as a circle with a radius of 50cm as an example, the surface of the cathode target 200 facing the magnetic source module is a circle with a radius of 50 cm. The specific ranges of the central region a are as follows: the radius is within 10cm from the center of the surface of the cathode target 200 facing the magnet module 100. The specific ranges of the middle region b are as follows: ranging from the boundary of the central area a to a radius of between 20cm and 30 cm. The specific ranges of the edge region c are as follows: from the border of the middle region b to the extreme edge of the cathode target 200.
Specifically, the specific distribution positions of the first electromagnet 111 and the second electromagnet 121 may be as follows.
Referring to fig. 6, the first: the projections of the first electromagnets 111 on the cathode target 200 are located in the middle region b of the cathode target 200, and the projections of the second electromagnets 121 on the cathode target 200 are located in the middle region b of the cathode target 200. At this time, a toroidal magnetic field may be generated between the plurality of first electromagnets 111 and the plurality of second electromagnets 121, and the coating uniformity of the middle region b of the substrate 300 may be adjusted by varying the magnitude of the current supplied to the first electromagnets 111 and/or the second electromagnets 121, so that the situation in which the middle edge region is easily uneven may be improved.
Referring to fig. 7, second: projections of the plurality of first electromagnets 111 on the cathode target 200 are located in an edge region c of the cathode target 200, and projections of the plurality of second electromagnets 121 on the cathode target 200 are located in the edge region c of the cathode target 200. At this time, a toroidal magnetic field may be generated between the plurality of first electromagnets 111 and the plurality of second electromagnets 121, and the uniformity of the coating film on the edge area c of the substrate 300 may be adjusted by varying the magnitude of the current supplied to the first electromagnets 111 and/or the second electromagnets 121, so that the edge area c may be easily uneven.
Referring to fig. 8, thirdly, a projection of a part of the first electromagnet 111 on the cathode target 200 is located in the middle region b of the cathode target 200, and a projection of a part of the second electromagnet 121 on the cathode target 200 is located in the middle region b of the cathode target 200; the other part of the projection of the first electromagnet 111 on the cathode target 200 is located in the edge region c of the cathode target 200, and the other part of the projection of the second electromagnet 121 on the cathode target 200 is located in the edge region c of the cathode target 200. At this time, a part of the first electromagnet 111 and a part of the second electromagnet 121 are disposed correspondingly, and a toroidal magnetic field may be generated; by changing the magnitude of the current supplied to part of the first electromagnets 111 and/or part of the second electromagnets 121, the coating uniformity of the middle region b of the substrate 300 can be adjusted, so that the condition that the middle region b is easy to have unevenness is improved. The other part of the first electromagnet 111 and the other part of the second electromagnet 121 are correspondingly arranged and can generate a ring-shaped magnetic field; by changing the magnitude of the current supplied to the other part of the first electromagnet 111 and/or the other part of the second electromagnet 121, the coating uniformity of the edge area c of the substrate 300 can be adjusted, so that the condition that the edge area c is easy to have unevenness is improved.
Of course, it is understood that when it is required to simultaneously adjust the thickness of the film layer at the edge and the middle of the substrate 300, the current levels of all the first electromagnets 111 and all the second electromagnets 121 may be simultaneously adjusted.
Referring to fig. 9, fourth: projections of the plurality of first electromagnets 111 on the cathode target 200 are located in a central region b of the cathode target 200, and projections of the plurality of second electromagnets 121 on the cathode target 200 are located in an edge region c of the cathode target 200. At this time, a plurality of first electromagnets 111 may generate a toroidal magnetic field between the corresponding plurality of first permanent magnets 112; the thickness of the plated film in the middle of the substrate 300 can be adjusted by changing the magnitude of the current supplied to the first electromagnet 111. The plurality of second electromagnets 121 may generate a toroidal magnetic field with the plurality of second permanent magnets 122 corresponding thereto; the thickness of the coating film on the edge of the substrate 300 can be adjusted by changing the magnitude of the current supplied to the second electromagnet 121.
Referring to fig. 10, projections of a plurality of first electromagnets on the cathode target 200 are located in a central region b of the cathode target 200, projections of a part of second electromagnets on the cathode target 200 are located in the central region b of the cathode target 200, and projections of another part of second electromagnets on the cathode target 200 are located in an edge region c of the cathode target 200.
Referring to fig. 11 to 13, fig. 11 is a schematic structural view of the magnetic source module shown in fig. 1 in another direction, fig. 12 is a schematic structural view of the magnetic source module shown in fig. 1 in another direction, and fig. 13 is a schematic structural view of the magnetic source module shown in fig. 1 in yet another direction.
In some embodiments, the magnet module 100 further comprises a first yoke 130 and a second yoke 140; the first yoke 130 has a first surface 131, the second yoke 140 has a second surface, and the first surface 131 and the second surface face each other; both ends of the plurality of first magnets 110 are fixedly connected to the first surface 131 and the second surface, respectively, and both ends of the plurality of second magnets 120 are fixedly connected to the first surface 131 and the second surface, respectively. That is, the plurality of first magnets 110 and the plurality of second magnets 120 are each positioned between the first yoke 130 and the second yoke 140. The first yoke 130 and the second yoke 140 may be made of soft iron, a3 steel, soft magnetic alloy or ferrite material with relatively high magnetic permeability. The first yoke 130 and the second yoke 140 do not generate magnetic field by themselves, and only play a role of magnetic line transmission in a magnetic circuit, and the first yoke 130 and the second yoke 140 can restrain leakage flux of the induction coil from diffusing outwards.
Specifically, one of the first and second yokes 130 and 140 includes a first sub-yoke 141 and a second sub-yoke 142, the first sub-yoke 141 is fixed to the plurality of first magnets 110, and the second sub-yoke 142 is fixed to the plurality of second magnets 120. For convenience of description, taking the case where the first yoke 130 is integrally formed and the second yoke 140 includes the first sub-yoke 141 and the second sub-yoke 142, the first yoke 130 is integrally formed to prevent leakage flux from being diffused outward and to function as a support for the entire magnetic source module, and particularly, the first sub-yoke 141 and the second sub-yoke 142 are each formed in a ring shape, and a lower surface of the first sub-yoke 141 is in contact with an upper end surface of the first magnet 110 with reference to a direction in the drawing, so that a width of the first sub-yoke 141 may be set to be substantially identical to a width of an upper end surface of the first magnet 110. The lower surface of the second sub-yoke 142 is in contact with the upper end surface of the second magnet 120, and thus the width of the second sub-yoke 142 may be set to substantially coincide with the width of the upper end surface of the second magnet 120. Therefore, the first magnet 110 and the second magnet 120 can be well connected, and the volumes of the first sub-yoke 141 and the second sub-yoke 142 are smaller, so that resources are saved, and the weight of the whole magnetic source module is reduced.
More specifically, the magnetic source module is driven to rotate by the motor, wherein the first magnetic yoke 130 can be provided with the rotating shaft 160, the rotating shaft 160 is connected with the motor, the motor acts to drive the rotating shaft 160 to rotate, the rotating shaft 160 drives the first magnetic yoke 130 to rotate, and the first magnet 110, the second magnet 120 and the second magnetic yoke 140 are directly or indirectly fixed to the first magnetic yoke 130, so that the first magnetic yoke 130 rotates to drive the whole magnetic source module to rotate.
Because the magnetic source module can rotate, it is not necessary to provide a magnetic source module corresponding to the entire cathode target 200, and it is only necessary to enable the magnetic field to cover the entire cathode target 200 when the magnetic source module rotates. It has been mentioned above that the projection of the rotation center of the magnetic source module on the cathode target 200 is substantially coincident with the center of the cathode target 200, so long as the magnetic source module can cover about half of the area of the cathode target 200, the magnetic field can be made to correspond to the whole cathode target 200 after the magnetic source module rotates.
Therefore, the rotating shaft 160 is disposed on the first yoke 130 and is located at a position of the first yoke 130, which is closer to the edge, so that the magnetic field covers the entire cathode target 200 when the magnetic source module rotates.
In some embodiments, the magnetic source module further includes a balance plate 150 parallel to the first surface 131, one side of the balance plate 150 is fixedly connected to the first yoke 130 or the second yoke 140, and the other side of the balance plate 150 extends away from the first yoke 130. Since the rotation shaft 160 is located at a position closer to the edge of the first yoke 130, the magnetic source module may shake due to unstable center of gravity when rotating, thereby affecting the deposition. In order to prevent the magnetic source module from shaking during rotation and increase the accuracy of coating, the balance plate 150 is disposed, and the balance plate 150 is more specifically fixed to the first yoke 130 near the rotation shaft 160, thereby functioning to balance the magnetic source module.
Based on the magnetic source module provided in any of the above embodiments, the embodiment of the present application further provides a magnetron sputtering apparatus, which may further include a cathode target 200, a sputtering chamber, and other components besides the above magnetic source module, wherein the cathode target 200 and the magnetic source module are both disposed in the sputtering chamber, and the cathode target 200 directly faces the magnetic source module. This embodiment is not described in detail.
It should be understood that the application of the present application is not limited to the above examples, and that modifications or changes may be made by those skilled in the art based on the above description, and all such modifications and changes are intended to fall within the scope of the appended claims.

Claims (10)

1. A magnetic source module for a magnetron sputtering device, comprising: a magnet module; the magnet module is rotatably arranged on the back of the cathode target of the magnetron sputtering equipment;
the magnet module comprises a plurality of first magnets and a plurality of second magnets, wherein the polarities of the ends of the first magnets, which face away from the cathode target, and the polarities of the ends of the second magnets, which face away from the cathode target, are opposite;
one part of the first magnets is a first electromagnet, and the other part of the first magnets is a first permanent magnet; and one part of the second magnets is a second electromagnet, and the other part of the second magnets is a second permanent magnet.
2. The magnetic source module for a magnetron sputtering apparatus of claim 1, wherein at least a portion of the plurality of first electromagnets are disposed in series and/or at least a portion of the plurality of second electromagnets are disposed in series.
3. The magnetic source module for a magnetron sputtering apparatus of claim 1, wherein at least a portion of the plurality of first electromagnets and at least a portion of the plurality of second electromagnets are disposed in correspondence to each other so as to generate a toroidal magnetic field therebetween.
4. The magnetic source module for a magnetron sputtering apparatus of claim 1 wherein a plurality of the first magnets form an inner ring magnet assembly around one turn, a plurality of the second magnets form an outer ring magnet assembly around one turn, the outer ring magnet assembly surrounding the inner ring magnet assembly around one turn;
alternatively, a plurality of the first magnets and a plurality of the second magnets form a magnet ring around one ring.
5. The magnetic source module for a magnetron sputtering apparatus of claim 4 wherein a center of rotation of the magnet module is located between the inner ring magnet assembly and the outer ring magnet assembly; or the rotation center of the magnet module is positioned in the magnet ring and staggered with the center of the magnet ring.
6. The magnetic source module for the magnetron sputtering device according to claim 1, wherein a projection of a rotation center of the magnet module on the cathode target is located in a central region of the cathode target;
projections of the first electromagnets on the cathode target are positioned in the middle area of the cathode target and/or in the edge area of the cathode target; projections of the second electromagnets on the cathode target are positioned in the middle area of the cathode target and/or in the edge area of the cathode target; the central area of the cathode target surrounds the central area of the cathode target, and the edge area of the cathode target surrounds the central area of the cathode target.
7. The magnetic source module for a magnetron sputtering apparatus of any one of claims 1 to 6 wherein the magnet module further comprises a first yoke and a second yoke; the first yoke has a first surface, the second yoke has a second surface, and the first surface and the second surface face each other; and two ends of the plurality of first magnets are fixedly connected with the first surface and the second surface respectively, and two ends of the plurality of second magnets are fixedly connected with the first surface and the second surface respectively.
8. The magnetic source module for a magnetron sputtering apparatus of claim 7, wherein one of the first yoke and the second yoke comprises a first sub-yoke and a second sub-yoke, the first sub-yoke being fixed to the plurality of first magnets, the second sub-yoke being fixed to the plurality of second magnets.
9. The magnetic source module for a magnetron sputtering apparatus of claim 7, further comprising a balance plate parallel to the first surface, one side of the balance plate being fixedly connected to the first yoke or the second yoke, the other side of the balance plate extending away from the first yoke.
10. A magnetron sputtering apparatus comprising a sputtering chamber and the magnetic source module of any one of claims 1 to 9 disposed within the sputtering chamber.
CN202110769415.5A 2021-07-07 2021-07-07 Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment Active CN114032516B (en)

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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0555339A1 (en) * 1990-10-31 1993-08-18 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
JPH11158625A (en) * 1997-11-25 1999-06-15 Sony Corp Magnetron sputtering film forming device
CN101182631A (en) * 2006-11-14 2008-05-21 应用材料公司 Magnetron sputtering source, sputter coating system and method for coating a substrate
CN101285172A (en) * 2007-05-11 2008-10-15 胜倍尔超强镀膜(苏州)有限公司 Rotary magnetron sputtering target
CN101447274A (en) * 2008-09-26 2009-06-03 东莞宏威数码机械有限公司 Magnetic circuit mechanism, angstrom sciences therewith and production method thereof
US20090314631A1 (en) * 2008-06-18 2009-12-24 Angstrom Sciences, Inc. Magnetron With Electromagnets And Permanent Magnets
US20120048724A1 (en) * 2010-08-31 2012-03-01 Mcleod Paul S Cylindrical Magnetron Sputter Source Utilizing Halbach Magnet Array
CN102420091A (en) * 2011-11-24 2012-04-18 中国科学院电工研究所 Composite magnetic control sputtering cathode
CN202492570U (en) * 2012-03-15 2012-10-17 深圳市创益科技发展有限公司 Magnetron sputtering coating device for solar cell
CN104109840A (en) * 2014-07-09 2014-10-22 星弧涂层新材料科技(苏州)股份有限公司 Magnetron sputtering cathode with magnetic field scanning function
CN107083537A (en) * 2017-05-02 2017-08-22 霍尔果斯迅奇信息科技有限公司 New high target utilization ratio planar magnetic control sputtering cathode
CN110791742A (en) * 2019-12-20 2020-02-14 横店集团东磁股份有限公司 Magnetic source structure of magnetron sputtering cathode and method for adjusting magnetic field by using magnetic source structure
CN211112196U (en) * 2019-12-20 2020-07-28 横店集团东磁股份有限公司 Magnetic source structure of magnetron sputtering cathode

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0555339A1 (en) * 1990-10-31 1993-08-18 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
JPH11158625A (en) * 1997-11-25 1999-06-15 Sony Corp Magnetron sputtering film forming device
CN101182631A (en) * 2006-11-14 2008-05-21 应用材料公司 Magnetron sputtering source, sputter coating system and method for coating a substrate
US20080173535A1 (en) * 2006-11-14 2008-07-24 Applied Materials, Inc. Magnetron Sputtering Source, Sputter-Coating Installation, and Method for Coating a Substrate
CN101285172A (en) * 2007-05-11 2008-10-15 胜倍尔超强镀膜(苏州)有限公司 Rotary magnetron sputtering target
US20090314631A1 (en) * 2008-06-18 2009-12-24 Angstrom Sciences, Inc. Magnetron With Electromagnets And Permanent Magnets
CN101447274A (en) * 2008-09-26 2009-06-03 东莞宏威数码机械有限公司 Magnetic circuit mechanism, angstrom sciences therewith and production method thereof
US20120048724A1 (en) * 2010-08-31 2012-03-01 Mcleod Paul S Cylindrical Magnetron Sputter Source Utilizing Halbach Magnet Array
CN102420091A (en) * 2011-11-24 2012-04-18 中国科学院电工研究所 Composite magnetic control sputtering cathode
CN202492570U (en) * 2012-03-15 2012-10-17 深圳市创益科技发展有限公司 Magnetron sputtering coating device for solar cell
CN104109840A (en) * 2014-07-09 2014-10-22 星弧涂层新材料科技(苏州)股份有限公司 Magnetron sputtering cathode with magnetic field scanning function
CN107083537A (en) * 2017-05-02 2017-08-22 霍尔果斯迅奇信息科技有限公司 New high target utilization ratio planar magnetic control sputtering cathode
CN110791742A (en) * 2019-12-20 2020-02-14 横店集团东磁股份有限公司 Magnetic source structure of magnetron sputtering cathode and method for adjusting magnetic field by using magnetic source structure
CN211112196U (en) * 2019-12-20 2020-07-28 横店集团东磁股份有限公司 Magnetic source structure of magnetron sputtering cathode

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