CN114031033B - Quantum bit three-dimensional integrated device based on phonon assistance - Google Patents
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Abstract
The invention provides a quantum bit three-dimensional integrated device based on phonon assistance, and aims to manufacture a three-dimensional electrode structure through a micro-nano processing technology and form an extensible quantum bit array on an electrode array by utilizing a plurality of carbon nano tubes. The carbon nano tube forms a quantum dot structure through voltage regulation to construct a quantum bit, a mechanical mode formed when the carbon nano tube vibrates can be used as a phonon cavity to provide and transmit phonons, and two-dimensional extensible integration of the quantum bit is realized by means of interaction between the quantum dot and the phonons and interaction between the phonons and the phonons. The device has small integral size and simple structure, is compatible with the existing microelectronic process, and is expected to realize the large-scale integration of the semiconductor quantum computing chip.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a quantum bit integrated array device based on phonon assistance.
Background
In recent years, the development of quantum information technology is rapid, and the quantum information technology has an important strategic position in the advanced technology field which is vigorously developed in various countries. Google, IBM, microsoft and other companies pay great attention to the commercial value of quantum computing, invest a great deal of capital and scientific research resources in the field of quantum computing, and the obtained achievements progress are successively published in top-level academic publications such as Nature and Science. In 2019, the Martinis team announces that human beings realize 'quantum dominance' for the first time in Nature published papers, and causes not little booming. The "Sycamore" processor developed by the Martinis team only takes 20 seconds to handle the problem that a traditional computer takes 10000 years to compute a result. The advent of the "Sycamore" processor has milestone significance in the field of quantum computing, which allows people to see the remarkable development potential of quantum computing, and has caused a hot tide in the research of quantum computing. Various quantum computing systems with features have appeared in the past, such as superconducting quantum computing, semiconductor quantum computing, ion trap quantum computing, topological quantum computing, and the like. We use quantum dots in one-dimensional nanowires (tubes) as qubits to construct an scalable three-dimensional quantum computing array device. The coupling of a plurality of quantum dots is realized through the interaction of the quantum dots and phonons and the interaction of the phonons and the phonons.
Disclosure of Invention
The invention provides a quantum bit three-dimensional integrated device based on phonon assistance, and aims to manufacture a three-dimensional electrode structure through a micro-nano processing technology and form an extensible quantum bit array on an electrode array by utilizing a plurality of carbon nano tubes. The carbon nano tube forms a quantum dot structure through voltage regulation to construct a quantum bit, a mechanical mode formed when the carbon nano tube vibrates can be used as a phonon cavity to provide and transmit phonons, and two-dimensional extensible integration of the quantum bit is realized by means of interaction between the quantum dot and the phonons and interaction between the phonons and the phonons. The device has small integral size and simple structure, is compatible with the existing microelectronic process, and is expected to realize the large-scale integration of the semiconductor quantum computing chip.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a quantum bit three-dimensional integrated device based on phonon assistance comprises a substrate, a quantum dot system, an auxiliary phonon cavity system and a three-dimensional electrode system, wherein the quantum dot system, the auxiliary phonon cavity system and the three-dimensional electrode system are formed on the substrate; the quantum dot system and the auxiliary sound cavity system are formed by a one-dimensional nanowire tube structure through regulation and control of an electrode system;
the quantum dot system: for use in forming a qubit to be used,
the auxiliary sound cavity system: the system is positioned between the two quantum dot systems and is used for realizing indirect coupling between different quantum dots by virtue of phonon-phonon interaction;
the three-dimensional electrode system is: comprises an inner electrode, an insulating layer, a dot matrix electrode and a connecting electrode;
the inner electrode: the inner electrode is used for connecting an external voltage source, a microwave source and measurement and control equipment and supplying power to the dot matrix electrode; the inner grid is positioned at the midpoint between two adjacent inner sources;
the insulating layer: located above the inner electrode and the substrate;
the lattice electrode is as follows: the quantum dot and sound cavity is positioned on the insulating layer and comprises an outer source electrode 611 and an outer grid electrode 612, the outer source electrode is used for carrying the quantum dot and the sound cavity, and the outer source electrode and the outer grid electrode are used for measuring and regulating the quantum dot and the sound cavity; the outer source electrodes form a rectangular array in the X and Y directions, and an outer grid 612 is arranged between the outer source electrodes 611 adjacent to each other in the X and Y directions; on the plane of the insulating layer, the direction in which the outer electrodes 611 and the outer gates 612 are alternately arranged from left to right is the X direction, and the Y direction is perpendicular to the X direction;
the connection electrode: the grid electrode is used for connecting the inner source electrode and the outer source electrode and connecting the inner grid electrode and the outer grid electrode;
the one-dimensional nanowire tube structure: the light-emitting diode is lapped or grows above an external source electrode of the dot matrix electrode to form a two-dimensional array in the X and Y directions; phonons formed by mechanical vibration of the one-dimensional nanowire tube structure are coupled with the quantum dot system, and a two-dimensional array constructed by a plurality of nanowire tubes is used for realizing integration of quantum bits;
the quantum bit three-dimensional integrated device regulates and controls quantum dots in a two-dimensional quantum bit mesh array formed by a plurality of one-dimensional nano-wire tubes through electrodes, and a plurality of quantum dot systems realize indirect coupling through an auxiliary phonon cavity system by means of the interaction of quantum dots and phonons and the interaction of phonons and phonons.
As a preferred mode, the one-dimensional nanowire tube structure is a carbon nanotube or a silicon nanowire.
Preferably, the auxiliary phonon cavity system and the quantum dot system are both formed by a one-dimensional nanowire tube structure.
Preferably, the three-dimensional electrode system includes 16 outer sources, 24 outer grids, 40 connecting electrodes, 16 inner sources, 24 inner grids, the 16 outer sources form a basic frame of the array device in a 4 × 4 structure, that is, 4 rows and 4 columns, and the 24 outer grids are distributed between the outer grids adjacent to each other in the X and Y directions.
As a preferred mode, the one-dimensional nanowire tube structure forms quantum dots through the regulation and control of voltage.
Preferably, the quantum dots and the sound cavities are arranged on the external source as a whole, and a total of 8 carbon nanotubes form a two-dimensional qubit net array, wherein 4 carbon nanotubes are transversely arranged on 4 transverse rows of external source electrodes, and the remaining 4 carbon nanotubes are longitudinally arranged on 4 longitudinal rows of external source electrodes.
Preferably, the insulating layer is made of silicon dioxide. The electrode is used for preventing the occurrence of leakage crosstalk between the electrodes, plays a role in protection and is used for supporting and connecting the electrodes.
Preferably, the width of each internal source electrode and the width of each internal grid electrode are 1 micron, the distance between every two adjacent internal source electrodes is 2 microns, the coating thicknesses of the internal source electrodes and the internal grid electrodes are both 25 nanometers, and the internal source electrodes and the internal grid electrodes are composed of gold with the thickness of 20 nanometers and titanium with the thickness of 5 nanometers; the coating speed is
Vacuum degree of 10 -7 mbar。
The working process and the working principle of the invention are as follows: and large-scale quantum bit coupling is realized on the array device by utilizing electron-phonon interaction and phonon-phonon interaction and taking the phonon cavity as a medium. The quantum dots formed by the one-dimensional nanowire tubes are coupled with phonon modes formed by mechanical vibration, and the phonon modes of adjacent oscillators are coupled with the phonon modes coupled with the quantum dots through the phonon cavities. The quantum dots on the array are coupled to the phonon cavity in the same way.
The beneficial effects of the invention are as follows: carbon nanotubes have the advantages of small size, light weight, high quality factor, etc., and are therefore selected as the main body of the array device. The whole size of the device is micron level, the external structure is simple, and integration in a certain scale on a quantum chip is expected to be realized. The manufacturing process is a traditional semiconductor micro-nano processing process and is easy for large-scale manufacturing.
Drawings
FIG. 1 is a schematic view of the overall structure of the apparatus of the present invention.
FIG. 2 is a schematic top view of the apparatus of the present invention.
FIG. 3 is a schematic front sectional view of the device of the present invention.
FIG. 4 is a schematic structural diagram of an inner electrode according to the present invention. The filled part is an internal source electrode, and the unfilled part is an internal gate electrode.
1 is a substrate, 2 is an insulating layer, 3 is a quantum dot system, 4 is an auxiliary sound cavity system, 5 is a one-dimensional nano-tube, 6 is a three-dimensional electrode system, 61 is a lattice electrode, 611 is an outer source electrode, 612 is an outer grid electrode, 62 is an inner electrode, 621 is an inner source electrode, 622 is an inner grid electrode, and 63 is a connecting electrode.
Detailed Description
The technical scheme of the invention is further explained by combining the drawings and the specific embodiment.
A quantum bit three-dimensional integrated device based on phonon assistance comprises a substrate, a quantum dot system, an auxiliary phonon cavity system and a three-dimensional electrode system, wherein the quantum dot system, the auxiliary phonon cavity system and the three-dimensional electrode system are formed on the substrate; the quantum dot system and the auxiliary sound cavity system are formed by a one-dimensional nanowire tube structure through regulation and control of an electrode system;
the quantum dot system: for use in forming a qubit to be used,
the auxiliary sound cavity system: the system is positioned between the two quantum dot systems and used for realizing indirect coupling between different quantum dots by virtue of phonon-phonon interaction;
the three-dimensional electrode system is: comprises an inner electrode, an insulating layer, a dot matrix electrode and a connecting electrode;
the inner electrode: the inner electrode is used for connecting an external voltage source, a microwave source and measurement and control equipment and supplying power to the dot matrix electrode; the inner grid is positioned at the midpoint between two adjacent inner sources;
the insulating layer: located above the inner electrode and the substrate;
the lattice electrode is as follows: the quantum dot and sound cavity is positioned on the insulating layer and comprises an outer source electrode 611 and an outer grid electrode 612, the outer source electrode is used for carrying the quantum dot and the sound cavity, and the outer source electrode and the outer grid electrode are used for measuring and regulating the quantum dot and the sound cavity; the outer source electrodes form a rectangular array in the X and Y directions, and an outer grid 612 is arranged between the outer source electrodes 611 adjacent to each other in the X and Y directions; on the plane of the insulating layer, the direction in which the outer electrodes 611 and the outer gates 612 are alternately arranged from left to right is the X direction, and the Y direction is perpendicular to the X direction;
the connection electrode: the grid electrode is used for connecting the inner source electrode and the outer source electrode and connecting the inner grid electrode and the outer grid electrode;
the one-dimensional nanowire tube structure: lapping or growing above the external source electrode of the dot matrix electrode to form a two-dimensional array in X and Y directions; phonons formed by mechanical vibration of the one-dimensional nanowire tube structure are coupled with a quantum dot system, and a two-dimensional array constructed by a plurality of nanowire tubes is used for realizing integration of quantum bits;
the quantum bit three-dimensional integrated device regulates and controls quantum dots in a two-dimensional quantum bit mesh array formed by a plurality of one-dimensional nano-wire tubes through electrodes, and a plurality of quantum dot systems realize indirect coupling through an auxiliary phonon cavity system by means of the interaction of quantum dots and phonons and the interaction of phonons and phonons.
The one-dimensional nanowire tube structure is a carbon nanotube or a silicon nanowire.
The auxiliary sound cavity system and the quantum dot system are both formed by a one-dimensional nanowire tube structure.
In this embodiment, the three-dimensional electrode system includes 16 outer sources, 24 outer grids, 40 connecting electrodes, 16 inner sources, and 24 inner grids, the 16 outer sources form a basic frame of the array device with a 4 × 4 structure, that is, 4 rows and 4 columns, and the 24 outer grids are distributed between the adjacent outer grids in the X and Y directions.
The one-dimensional nanowire tube structure forms quantum dots through voltage regulation.
The quantum dots and the sound cavities are arranged on the external source as a whole, and a two-dimensional quantum bit net array is formed by 8 carbon nano tubes in total, wherein 4 carbon nano tubes are transversely arranged on the external source with 4 transverse rows, and the rest 4 carbon nano tubes are longitudinally arranged on the external source with 4 longitudinal rows.
The insulating layer is composed of silicon dioxide. The electrode is used for preventing the condition of leakage crosstalk between the electrodes, plays a role in protection and is used for supporting and connecting the electrodes.
The substrate is composed of intrinsic silicon and two microns of silicon oxide. This example produced devices based on 1cm by 1cm negative.
The substrate was cleaned, with acetone and deionized water for 1 minute each, and shaken with a sonicator.
After the substrate is washed, an inner source electrode and an inner grid electrode are manufactured in an electron beam exposure mode, and after marks are engraved near the electrodes, electron beam glue homogenizing, glue baking, electron beam exposure, development, electron beam coating and metal stripping are sequentially carried out. The structure of the internal source and the internal gate is shown in fig. 4.
The width of the inner source electrode and the inner grid electrode is 1 micrometer, the distance between two adjacent inner source electrodes is 2 micrometers, and the inner grid electrode is centrally positioned between the two adjacent inner source electrodes. The thickness of the coating film of the internal source electrode and the internal grid electrode is 25 nanometers, and the coating film is composed of 20 nanometers thick gold and 5 nanometers thick titanium. The coating speed is
Vacuum degree of 10 -7 mbar。
After the inner source electrode and the inner grid electrode are manufactured, silicon dioxide with the thickness of 100 nanometers of an overlay mark covers the substrate. Circular channels with a diameter of 50 nanometers are etched at the marked positions by hydrofluoric acid for manufacturing the connecting electrodes, the outer source electrodes and the outer grid electrodes.
The position of the channel is the position of the lattice electrode (the external source electrode and the external grid electrode), and after etching is completed, electron beam glue homogenizing, glue baking, electron beam exposure, development, electron beam coating and metal stripping are sequentially carried out to manufacture the connecting electrode, the external source electrode and the external grid electrode. And a metal column formed in the channel by part of the metal coating is a connecting electrode, and the electrode positioned on the outer surface of the silicon dioxide layer is a lattice electrode. The connecting electrode and the lattice electrode are made of gold.
The length and width of the lattice electrode are both 1 micrometer. Wherein the thickness of the coating film of the outer source electrode is 200 nanometers, and the thickness of the coating film of the outer grid electrode is 50 nanometers. The distance between two adjacent outer source electrodes is 2 microns, and the outer grid electrode is centrally positioned between the two adjacent outer source electrodes and is consistent with the distribution positions of the inner source electrodes and the inner grid electrode on the substrate. The coating speed is
Vacuum degree of 10 -7 mbar。
In practical application, the integrated device can be expanded to higher dimension according to the use requirement of the chip.
Claims (8)
1. A quantum bit three-dimensional integrated device based on phonon assistance is characterized in that:
the device comprises a substrate, a quantum dot system, an auxiliary phonon cavity system and a three-dimensional electrode system, wherein the quantum dot system, the auxiliary phonon cavity system and the three-dimensional electrode system are formed on the substrate; the quantum dot system and the auxiliary sound cavity system are formed by a one-dimensional nanowire tube structure through regulation and control of an electrode system;
the quantum dot system: for forming a qubit;
the auxiliary sound cavity system: the system is positioned between the two quantum dot systems and is used for realizing indirect coupling between different quantum dots by virtue of phonon-phonon interaction;
the three-dimensional electrode system is: comprises an inner electrode, an insulating layer, a dot matrix electrode and a connecting electrode;
the internal electrode: the inner electrode is used for connecting an external voltage source, a microwave source and measurement and control equipment and supplying power to the dot matrix electrode; the inner grid is positioned at the midpoint between two adjacent inner grids;
the insulating layer: located above the inner electrode and the substrate;
the lattice electrode is as follows: the quantum dot and sound cavity is positioned on the insulating layer and comprises an outer source electrode (611) and an outer grid electrode (612), the outer source electrode is used for carrying the quantum dot and the sound cavity, and the outer source electrode and the outer grid electrode are used for measuring and regulating the quantum dot and the sound cavity; the outer source electrodes form a rectangular array in the X and Y directions, and an outer grid electrode (612) is arranged between the outer source electrodes (611) adjacent to each other in the X and Y directions; on the plane of the insulating layer, the direction in which the outer source electrodes (611) and the outer grid electrodes (612) are alternately arranged from left to right is the X direction, and the Y direction is vertical to the X direction;
the connection electrode: the grid electrode is used for connecting the inner source electrode and the outer source electrode and connecting the inner grid electrode and the outer grid electrode;
the one-dimensional nanowire tube structure: the light-emitting diode is lapped or grows above an external source electrode of the dot matrix electrode to form a two-dimensional array in the X and Y directions; phonons formed by mechanical vibration of the one-dimensional nanowire tube structure are coupled with the quantum dot system, and a two-dimensional array constructed by a plurality of nanowire tubes is used for realizing integration of quantum bits;
the quantum bit three-dimensional integrated device regulates and controls quantum dots in a two-dimensional quantum bit mesh array formed by a plurality of one-dimensional nano-wire tubes through electrodes, and a plurality of quantum dot systems realize indirect coupling through an auxiliary phononic cavity system by means of the interaction of the quantum dots and phonons and the interaction of the phonons and the phonons.
2. The three-dimensional integrated apparatus based on phonon assist qubits of claim 1, wherein: the one-dimensional nanowire tube structure is a carbon nanotube or a silicon nanowire.
3. The three-dimensional integrated apparatus based on phonon assist qubits of claim 1, wherein: the auxiliary sound cavity system and the quantum dot system are both formed by a one-dimensional nanowire tube structure.
4. The three-dimensional integrated apparatus based on phonon assist qubits of claim 1, wherein:
the three-dimensional electrode system comprises 16 outer sources, 24 outer grids, 40 connecting electrodes, 16 inner sources and 24 inner grids, the 16 outer sources form a basic frame of the array device in a 4-by-4 structure, namely 4 transverse rows and 4 longitudinal columns, and the 24 outer grids are distributed between the adjacent outer grids in the X and Y directions.
5. The three-dimensional integrated qubit based on phonon assist of claim 1 wherein: the one-dimensional nanowire tube structure forms quantum dots through voltage regulation.
6. The three-dimensional integrated apparatus based on phonon assist qubits of claim 1, wherein: the quantum dots and the phonon cavities are integrally lapped on the external source, and a two-dimensional quantum bit net-shaped array is formed by 8 carbon nano tubes in total, wherein 4 carbon nano tubes are transversely lapped on the external source of 4 transverse rows, and the rest 4 carbon nano tubes are longitudinally lapped on the external source of 4 longitudinal rows.
7. The three-dimensional integrated apparatus based on phonon assist qubits of claim 1, wherein: the insulating layer is composed of silicon dioxide.
8. The three-dimensional integrated qubit based on phonon assist of claim 1 wherein: the width of each internal source electrode and the width of each internal grid electrode are 1 micron, the distance between every two adjacent internal source electrodes is 2 microns, the coating thicknesses of the internal source electrodes and the internal grid electrodes are both 25 nanometers, and the internal source electrodes and the internal grid electrodes are composed of gold with the thickness of 20 nanometers and titanium with the thickness of 5 nanometers; the coating speed is
Vacuum degree of 10 -7 mbar。/>
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