CN114006594A - Bulk acoustic wave resonator and preparation method thereof - Google Patents
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- CN114006594A CN114006594A CN202111290290.4A CN202111290290A CN114006594A CN 114006594 A CN114006594 A CN 114006594A CN 202111290290 A CN202111290290 A CN 202111290290A CN 114006594 A CN114006594 A CN 114006594A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 51
- 230000002093 peripheral effect Effects 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000012530 fluid Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000000605 extraction Methods 0.000 claims description 33
- 238000002955 isolation Methods 0.000 claims description 21
- 239000007772 electrode material Substances 0.000 claims description 15
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000001259 photo etching Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XSBJUSIOTXTIPN-UHFFFAOYSA-N aluminum platinum Chemical compound [Al].[Pt] XSBJUSIOTXTIPN-UHFFFAOYSA-N 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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Abstract
Disclosed herein are a bulk acoustic wave resonator and a method of manufacturing the same, the bulk acoustic wave resonator including: the piezoelectric device comprises a top electrode, a piezoelectric material film, a bottom electrode and a substrate; the piezoelectric material film is provided with more than one second through hole; more than one third through hole is formed in the area defined by the outer peripheral outline of the bottom electrode; wherein the first through hole, the second through hole and the third through hole are used for passing corrosive fluid of etching the cavity on the substrate. According to the embodiment of the invention, under the condition that a sacrificial layer process, a substrate back surface photoetching process and a Bragg reflection layer do not need to be applied, the preparation process of the bulk acoustic wave resonator is simplified by etching corrosive fluid of a cavity on the substrate through the arranged first through hole, the second through hole and the third through hole.
Description
Technical Field
The present disclosure relates to, but not limited to, radio frequency communication technologies, and more particularly, to a bulk acoustic wave resonator and a method for fabricating the same.
Background
Micro-electromechanical system (MEMS) resonators are widely used in the field of radio frequency communications, and play an extremely important role in the manufacture of micro-filters, duplexers, multiplexers, and the like. The surface acoustic wave resonator in the related technology is mature in process, the resonant frequency can be adjusted through the change of a photoetching pattern, but due to the restriction of photoetching process conditions and the limitation of sound velocity in a piezoelectric material, the surface acoustic wave resonator is difficult to have higher electromechanical coupling coefficient and quality factor above 2.5 gigahertz (GHz), and the manufacturing process is difficult to be compatible with the processing process of a complementary metal oxide semiconductor, so that the surface acoustic wave resonator does not conform to the development trend of miniaturization and integration of electronic products. The bulk acoustic wave resonator in the related art can be applied to the ultrahigh frequency field, but the process is relatively complex, the thickness of the piezoelectric film is small when the resonant frequency is high, and the quality is difficult to guarantee. Lamb wave resonators can have high electromechanical coupling coefficients under ultrahigh frequency, but the requirements on photoetching equipment and process conditions are severe, and the intensity and the number of parasitic modes are more than those of bulk acoustic wave resonators.
Aluminum nitride is a piezoelectric material widely used in MEMS resonators in recent years, and has the advantages of stable chemical properties, good process repeatability, high thermal stability of material parameters, and the like. The main problems of the resonator based on aluminum nitride in manufacturing the filter with the center frequency of more than 3GHz are complex process, narrow process window, low electromechanical coupling coefficient and poor quality of aluminum nitride, and are difficult to meet the requirements of mass production. Therefore, there is a need for a resonator of a new structure that can meet the electrical requirements of uhf filters.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a bulk acoustic wave resonator and a preparation method thereof, which can reduce the requirement of the bulk acoustic wave resonator on a photoetching process and simplify the preparation process of the bulk acoustic wave resonator.
An embodiment of the present invention provides a bulk acoustic wave resonator, including: the piezoelectric device comprises a top electrode 1, a piezoelectric material film 2, a bottom electrode 3 and a substrate 4; wherein the content of the first and second substances,
more than one first through hole (1-1) is formed in the area defined by the peripheral outline of the top electrode (1), and more than one second through hole (2-1) is formed in the piezoelectric material film (2); more than one third through hole (3-1) is arranged in the area defined by the outer peripheral outline of the bottom electrode (3);
wherein the first via (1-1), the second via (2-1) and the third via (3-1) are used for etching corrosive fluids of a cavity on a substrate (4); the overlapping area of a first projection area of the second through hole (2-1) on the area defined by the peripheral contour of the top electrode (1) and the first through hole (1-1) is a first hollow area; the overlapping area of a second projection area of the second through hole (2-1) on the area defined by the peripheral outline of the bottom electrode (3) and the third through hole (3-1) is a second hollow area.
The embodiment of the invention also provides a preparation method of the bulk acoustic wave resonator, which comprises the following steps:
depositing a bottom electrode material and a bottom electrode extraction electrode material on the upper surface of the substrate, and carrying out graphical processing to obtain a bottom electrode extraction electrode and a bottom electrode containing a third through hole;
preparing a piezoelectric material film on the upper surface of the bottom electrode material;
etching the piezoelectric material film to obtain a second through hole;
depositing a top electrode material and a top electrode lead-out electrode material on the upper surface of the piezoelectric material film, and carrying out graphical processing to obtain a top electrode lead-out electrode and a top electrode comprising a first through hole;
corrosive fluid flows to the substrate etching cavity through the first through hole, the second through hole and the third through hole, and the bulk acoustic wave resonator is released;
the overlapping area of a first projection area of the second through hole on the area defined by the peripheral outline of the top electrode and the first through hole is a first hollow area; and the overlapping area of the second projection area of the second through hole on the area defined by the peripheral outline of the bottom electrode and the third through hole is a second hollow area.
The technical scheme of the application includes: the piezoelectric device comprises a top electrode 1, a piezoelectric material film 2, a bottom electrode 3 and a substrate 4; the area defined by the peripheral outline of the top electrode 1 is provided with more than one first through hole 1-1, and the piezoelectric material film 2 is provided with more than one second through hole 2-1; more than one third through hole 3-1 is arranged in the area defined by the peripheral outline of the bottom electrode 3; wherein the first through hole 1-1, the second through hole 2-1 and the third through hole 3-1 are used for etching corrosive fluid of a cavity on the substrate 4; the overlapping area of the first projection area of the second through hole 2-1 on the area defined by the peripheral outline of the top electrode 1 and the first through hole 1-1 is a first hollow area; the overlapping area of the second projection area of the second through hole 2-1 on the area defined by the peripheral outline of the bottom electrode 3 and the third through hole 3-1 is a second hollow area. According to the embodiment of the invention, under the condition that a sacrificial layer process, a substrate back surface photoetching process and a Bragg reflection layer do not need to be applied, the preparation process of the bulk acoustic wave resonator is simplified by etching corrosive fluid of a cavity on the substrate through the arranged first through hole 1-1, the second through hole 2-1 and the third through hole 3-1.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a perspective view of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the admittance curves of a bulk acoustic wave resonator in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of the admittance curves of a bulk acoustic wave resonator according to another embodiment of the present invention;
FIG. 5 is a schematic diagram of the admittance curves of a bulk acoustic wave resonator according to yet another embodiment of the present invention;
FIG. 6 is a two-dimensional partial schematic view of a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 7 is a schematic view of an isolation layer according to an embodiment of the present invention;
FIG. 8 is a notch diagram according to an embodiment of the present invention;
FIG. 9 is a schematic view of an isolation trench according to an embodiment of the present invention;
FIG. 10 is a schematic view of an extraction electrode according to an embodiment of the present invention;
FIG. 11 is a flow chart of a method of fabricating a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 12 is a schematic diagram illustrating a bulk acoustic wave resonator according to an embodiment of the present invention;
FIG. 13 is a schematic diagram illustrating a bulk acoustic wave resonator according to another embodiment of the present invention;
FIG. 14 is a schematic diagram illustrating a bulk acoustic wave resonator according to yet another embodiment of the present invention;
FIG. 15 is a schematic diagram illustrating a bulk acoustic wave resonator according to yet another embodiment of the present invention;
fig. 16 is a schematic composition diagram of a bulk acoustic wave resonator according to yet another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Fig. 1 is a perspective view of a bulk acoustic wave resonator according to an embodiment of the present invention, and fig. 2 is a cross-sectional view of the bulk acoustic wave resonator according to the embodiment of the present invention, as shown in fig. 1 and fig. 2, the bulk acoustic wave resonator according to the embodiment of the present invention includes: the piezoelectric device comprises a top electrode 1, a piezoelectric material film 2, a bottom electrode 3 and a substrate 4; wherein the content of the first and second substances,
the area defined by the peripheral outline of the top electrode 1 is provided with more than one first through hole 1-1, and the piezoelectric material film 2 is provided with more than one second through hole 2-1; more than one third through hole 3-1 is arranged in the area defined by the peripheral outline of the bottom electrode 3;
wherein, the first through hole 1-1, the second through hole 2-1 and the third through hole 3-1 are used for etching corrosive fluid of the cavity on the substrate 4; the overlapping area of the first projection area of the second through hole 2-1 on the area defined by the peripheral outline of the top electrode 1 and the first through hole 1-1 is a first hollow area; the overlapping area of the second projection area of the second through hole 2-1 on the area defined by the peripheral outline of the bottom electrode 3 and the third through hole 3-1 is a second hollow area.
In the embodiment of the invention, a first through hole 1-1 and a third through hole 3-1 are respectively arranged in the regions defined by the peripheral outlines of a top electrode 1 and a bottom electrode 3; in an exemplary embodiment, the top electrode 1 has only a first via 1-1, and the bottom electrode 3 has only a third via 3-1.
According to the embodiment of the invention, under the condition that a sacrificial layer process, a substrate back surface photoetching process and a Bragg reflection layer do not need to be applied, the preparation process of the bulk acoustic wave resonator is simplified by etching corrosive fluid of a cavity on the substrate through the arranged first through hole 1-1, the second through hole 2-1 and the third through hole 3-1.
In an exemplary embodiment, the sizes and positions of the first through hole 1-1, the second through hole 2-1, and the third through hole 3-1 according to the embodiments of the present invention may be analyzed and set by those skilled in the art according to the volumes of the corrosive fluids, the positions of the cavities, and the etching rate of the substrate.
In one illustrative example, corrosive fluids in embodiments of the invention may include: xenon difluoride. In an exemplary embodiment, the corrosive fluid of embodiments of the present invention may be determined by one skilled in the art based on the material of the substrate.
In an illustrative example, the material of the substrate of the present embodiment may be silicon or silicon carbide, and the substrate 4 is etched by a corrosive fluid to obtain a cavity; according to the embodiment of the invention, the substrate is used for weakening the vibration of the piezoelectric material film 2, the top electrode 1 and the bottom electrode 3 at the edge of the bulk acoustic wave resonator, so that the suppression of a parasitic mode is realized.
In an exemplary embodiment, the piezoelectric material film 2 according to the embodiment of the present invention is composed of one or more layers of any one of the following piezoelectric materials:
aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lithium tantalate, and lead zirconate titanate.
In an exemplary embodiment, the projections of the top electrode 1 on the plane of the top of the bottom electrode 3 are all located in the area defined by the outer contour of the bottom electrode 3.
In an exemplary embodiment, the ratio of the area of the first through-hole 1-1 to the area of the region defined by the outer peripheral contour of the top electrode 1 according to the embodiment of the present invention is a first predetermined ratio.
In an exemplary embodiment, the ratio of the area of the second through-hole 2-1 to the area of the region defined by the outer peripheral contour of the top electrode 1 is a second predetermined ratio.
In an exemplary embodiment, the ratio of the area of the third through-hole 3-1 to the area of the region circumscribed by the outer peripheral contour of the top electrode 1 is a third predetermined ratio.
In an illustrative example, the first predetermined ratio in the embodiment of the present invention is greater than 0.001 but less than 0.7; the second predetermined ratio is greater than 0.001 but less than 0.7; the third predetermined ratio is greater than 0.001 but less than 0.7.
In an exemplary embodiment, the first preset ratio, the second preset ratio and the third preset ratio of the embodiment of the present invention may be adjusted by a person skilled in the art based on the performance of the prepared bulk acoustic wave resonator, and in an exemplary embodiment, the first preset ratio, the second preset ratio and the third preset ratio of the embodiment of the present invention may be greater than 0.01 but less than 0.09.
In an exemplary embodiment, the ratio of the area of the upper surface of the cavity of the substrate 4 of the present embodiment to the area of the region defined by the outer peripheral contour of the top electrode 1 is a fourth predetermined ratio.
In an exemplary embodiment, the fourth predetermined ratio in the embodiment of the present invention is greater than 0.8 but less than 4.
In an exemplary embodiment, the ratio of the area of the first hollow area to the area of the peripheral outline delineating area of the top electrode 1 is a fifth preset ratio;
the ratio of the area of the second hollow area to the area of the peripheral outline delineating area of the top electrode 1 is a sixth preset ratio;
wherein the fifth predetermined ratio is greater than 0.001 but less than 0.7; the sixth predetermined ratio is greater than 0.001 but less than 0.7.
In an exemplary embodiment, the fifth preset ratio and the sixth preset ratio of the embodiment of the present invention may be adjusted by a person skilled in the art based on the performance of the prepared bulk acoustic wave resonator, and in an exemplary embodiment, the fifth preset ratio and the sixth preset ratio of the embodiment of the present invention may be greater than 0.01 but less than 0.09. In an exemplary embodiment, when the top electrode 1 and the bottom electrode 3 are made of aluminum, the piezoelectric material film 2 is made of aluminum nitride, the substrate 4 is made of silicon, the outer peripheral contours of the upper surfaces of the top electrode 1 and the bottom electrode 3 are circular, and the radius of the top electrode 1 and the radius of the bottom electrode 3 are both larger than the radius of the upper surface of the cavity of the substrate 4; the values of the parameters are shown in table 1; fig. 3 is a schematic diagram of the admittance curves of a bulk acoustic wave resonator according to an embodiment of the present invention, the admittance curves of the bulk acoustic wave resonator having a radius of 58 micrometers (μm) at the upper surface of the cavity on the substrate 4, over a small frequency range; FIG. 4 is a schematic diagram of the admittance curves of a bulk acoustic wave resonator according to another embodiment of the present invention, the admittance curves of the bulk acoustic wave resonator having a radius of 58 μm at the upper surface of the cavity on the substrate 4 over a large frequency range; the ratio of the area of the upper surface of the cavity on the substrate 4 to the area of the region defined by the outer peripheral contour of the top electrode 1 is a fourth preset ratio; series resonance frequency f of bulk acoustic wave resonator designed based on parameters in table 1 in embodiment of the inventions4.876 gigahertz (GHz), parallel resonance frequency fpAt 5.024GHz, the calculated electromechanical coupling coefficient was 7.27%. Under the combination of the parameters, the radiuses of the upper surfaces of the cavities on the substrate 4 are smaller than the radiuses of the top electrode and the bottom electrode, so that the vibration of the piezoelectric material film and the electrodes at the edge of the bulk acoustic wave resonator is weakened, and the parasitic mode caused by the edge of the bulk acoustic wave resonator is inhibited. If the radius of the upper surface of the cavity on the substrate 4 is larger than the top and bottom electrodesRadius of electrodes, e.g. r3At 62 μm, the admittance curve of the bulk acoustic wave resonator over a small frequency range, as shown in fig. 5, compares fig. 3 with fig. 5, where the admittance curve of fig. 5 has more parasitic modes.
| Parameter(s) | Number per micron | Parameter(s) | Number per micron | Parameter(s) | Number per micron |
| x1 | 5 | r1 | 60 | ht | 0.07 |
| x2 | 4 | r2 | 60 | hp | 1 |
| x3 | 5 | r3 | 58 | hb | 0.07 |
TABLE 1
FIG. 6 is a schematic two-dimensional partial view of a bulk acoustic wave resonator according to an embodiment of the present invention, as shown in FIG. 6, with the two-dimensional partial structure rotated 360 along the rotation axis 9 to form a three-dimensional bulk acoustic wave resonator; suppose that: the top electrode 1 and the bottom electrode 3 are circular; the number of the first through holes 1-1 is 1 and the first through holes are circular, and the number of the second through holes 2-1 is 1 and the second through holes are circular; the number of the third through holes 3-1 is 1 and the third through holes are circular; the center of the first through hole 1-1 is the geometric center of the top electrode 1, the center of the second through hole 2-1 is the geometric center of the piezoelectric material film 2, the third through hole 3-1 is the geometric center of the bottom electrode 3, and the meaning of each parameter in the figure is respectively as follows: x is the number of1Is the radius, x, of the first through-hole 1-12Is the radius, x, of the second through-hole 2-13Is the radius of the third through-hole 3-1, r1Is the radius of the top electrode 1, r2Radius of the bottom electrode 3, r3Is the radius of the upper surface of the cavity, htIs the thickness of the top electrode 1, hpIs the thickness h of the piezoelectric material film 2bIs the bottom electrode 3 thickness. In the embodiment of the invention, when the first through hole 1-1, the second through hole 2-1 and the third through hole 3-1 are all round, the three-dimensional structures neglecting the top electrode extraction electrode 5 and the bottom electrode extraction electrode 8 can be formed by rotating around the central axis by using a two-dimensional geometric model, thereby being beneficial to modeling and simulation. Series resonant frequency f in the embodiments of the present inventionsAnd parallel resonant frequency fpDetermining the electromechanical coupling coefficient of bulk acoustic wave resonators
Is expressed by a first-order Taylor approximation formula as:
in an exemplary embodiment, an admittance curve is obtained based on bulk acoustic wave resonator parameters, and an expression of a piezoelectric equation for obtaining the admittance curve is as follows:
T＝cS-eE
D＝εE-eS
wherein T is a stress matrix, c is a piezoelectric material rigidity matrix, S is a strain matrix, E is a piezoelectric stress matrix, E is the electrostatic field intensity, D is the electric displacement, and epsilon is a piezoelectric material dielectric matrix; adjusting the resonant frequency and the electromechanical coupling coefficient of the bulk acoustic wave resonator according to a piezoelectric stress matrix e, wherein the piezoelectric stress matrix is as follows:
wherein e15, e22, e24, e31 and e33 are the piezoelectric coefficients of the piezoelectric material in the corresponding direction respectively; based on the equation, determining a theoretical admittance curve of the bulk acoustic wave resonator by using a finite element simulation method and adjusting geometric parameters; and manufacturing the bulk acoustic wave resonator, testing to obtain an actual admittance curve of the bulk acoustic wave resonator, further adjusting the geometric dimension and the process parameters according to the actual admittance curve, and finally determining the geometric dimension and the process parameters for preparing the bulk acoustic wave resonator meeting the requirements.
In an illustrative example, the first through-hole 1-1 in the embodiment of the present invention is in any one of the following shapes: circular, elliptical, regular polygonal, trapezoidal and pentagonal;
in an illustrative example, the second through-hole 2-1 in the embodiment of the present invention is any one of the following shapes: circular, elliptical, regular polygonal, trapezoidal and pentagonal;
in an exemplary embodiment, the third through hole 3-1 in the embodiment of the present invention is any one of the following shapes: circular, elliptical, regular polygonal, trapezoidal and pentagonal.
In an exemplary embodiment, the shape of the outer peripheral outline of the second projection area formed by projecting the top electrode 1 on the plane of the top of the bottom electrode 3 includes any one of the following:
circular, elliptical, regular polygonal, trapezoidal and pentagonal. In one illustrative example, embodiments of the present invention provide a regular polygon comprising: equilateral polygons, rectangles, and the like.
In one illustrative example, the top electrode 1 of the present embodiment is composed of one or more layers of conductive material;
in an illustrative example, the conductive material in the embodiment of the present invention includes a conductive compound or any one of the following conductive simple substances: gold, aluminum, copper, titanium, molybdenum, and platinum.
In one illustrative example, the bottom electrode 3 of embodiments of the present invention is comprised of one or more layers of conductive material;
in an illustrative example, the conductive material in the embodiment of the present invention includes a conductive compound or any one of the following conductive simple substances: gold, aluminum, copper, titanium, molybdenum, and platinum.
In an exemplary embodiment, the top electrode 1 in the embodiment of the invention adopts an aluminum-platinum double-layer electrode, the double-layer electrode deposits aluminum first and then deposits platinum, and the platinum is used as an anti-oxidation protective layer to prevent the upper surface of the aluminum layer from being oxidized, so that the long-term service reliability of the device is improved;
in an exemplary embodiment, the bottom electrode 3 in the embodiment of the invention adopts an aluminum-platinum double-layer electrode, the double-layer electrode deposits aluminum first and then deposits platinum, and the platinum is used as an anti-oxidation protective layer to prevent the upper surface of the aluminum layer from being oxidized, so that the long-term service reliability of the device is improved; the quality of the grown aluminum nitride is better when the upper surface of the bottom electrode 3 is platinum.
In an exemplary embodiment, the bulk acoustic wave resonator according to an embodiment of the present invention further includes: a top electrode extraction electrode 5;
an isolation layer 6 or a cavity 7 is arranged between the top electrode extraction electrode 5 and the piezoelectric material film 2;
the isolation layer 6 or the cavity 7 is used for isolating the top electrode extraction electrode 5 from the piezoelectric material film 2.
Fig. 7 is a schematic diagram of an isolation layer according to an embodiment of the present invention, and as shown in fig. 7, an isolation layer 6 is disposed between the top electrode extraction electrode 5 and the piezoelectric material film 2, and the isolation layer 6 isolates the top electrode extraction electrode 5 from the piezoelectric material film 2; in an exemplary embodiment, the isolation layer 6 of the present invention may be formed by deposition.
In an exemplary embodiment, the top electrode extraction electrode 5 of the embodiment of the present invention is provided with a notch 3-2 with a preset shape at the position of the fourth projection area of the bottom electrode 3;
wherein the area of the gap 3-2 includes a fourth projection area.
FIG. 8 is a schematic view of a notch according to an embodiment of the present invention, as shown in FIG. 8, a notch 3-2 is formed on the bottom electrode 3; the embodiment of the invention is based on the arrangement of the notch 3-2, and inhibits a parasitic mode caused by the superposition of the projection areas of the top electrode extraction electrode 5 and the bottom electrode 3.
In an illustrative example, the bulk acoustic wave resonator of the embodiment of the invention further includes a top electrode extraction electrode 5 and a bottom electrode extraction electrode 8, and the piezoelectric material film 2 is etched with an isolation groove 2-2;
the projection of the isolation groove 2-2 on the plane where the top of the bottom electrode 3 is located in the area formed by the bottom electrode 3 and the bottom electrode extraction electrode 8; the isolation groove 2-2 is located in the middle region formed by the outer peripheral contour of the region composed of the bottom electrode 3 and the bottom electrode lead-out electrode 8 and the outer peripheral contour of the top electrode 1.
In an exemplary embodiment, the top electrode 1 and the bottom electrode 3 are circular, the isolation trench 2-2 is in a fan-shaped ring shape, the inner radius of the isolation trench 2-2 is larger than the outer radius of the top electrode 1, and the outer radius of the isolation trench 2-2 is smaller than the outer radius of the bottom electrode 3.
Fig. 9 is a schematic diagram of an isolation trench according to an embodiment of the present invention, and as shown in fig. 9, in the embodiment of the present invention, propagation of an acoustic wave from an active region of a bulk acoustic wave resonator to the periphery is effectively suppressed by the isolation trench 2-2, so that mutual influence between a plurality of bulk acoustic wave resonators with small intervals is reduced.
In an exemplary embodiment, the bulk acoustic wave resonator according to an embodiment of the present invention further includes: a bottom electrode extraction electrode 8; in an illustrative example, the bulk acoustic wave resonator of the embodiment of the present invention may include two or more top electrode extraction electrodes 5 and two or more bottom electrode extraction electrodes 8; fig. 10 is a schematic diagram of the extraction electrodes according to the embodiment of the present invention, and as shown in fig. 10, the bulk acoustic wave resonator includes two top electrode extraction electrodes 5 and two bottom electrode extraction electrodes 8.
Fig. 11 is a flowchart of a method for manufacturing a bulk acoustic wave resonator according to an embodiment of the present invention, as shown in fig. 11, including:
1102, preparing a piezoelectric material film on the upper surface of the bottom electrode material; here, the method of preparing the piezoelectric material thin film includes deposition.
1103, etching the piezoelectric material film to obtain a second through hole;
1104, depositing a top electrode material and a top electrode extraction electrode material on the upper surface of the piezoelectric material film, and carrying out graphical processing to obtain a top electrode extraction electrode and a top electrode comprising a first through hole;
the overlapping area of the first projection area of the second through hole on the area defined by the peripheral outline of the top electrode and the first through hole is a first hollow area; the overlapping area of the second projection area of the second through hole on the area defined by the peripheral outline of the bottom electrode and the third through hole is a second hollow area.
Fig. 12 to 16 are diagrams illustrating a step-by-step production of a bulk acoustic wave resonator according to an embodiment of the present invention; as shown in fig. 12, the bottom electrode 3 of the bulk acoustic wave resonator obtained in step 1101 is executed, and the bottom electrode 3 includes a third through hole 3-1 therein; as shown in fig. 13, the piezoelectric material thin film 2 of the bulk acoustic wave resonator obtained in step 1102 is executed; as shown in fig. 13, step 1103 is executed to etch the piezoelectric material film 2, so as to form a second through hole 2-1; as shown in fig. 14, the top electrode 1 of the bulk acoustic wave resonator obtained in step 1104 is executed, and the top electrode 1 includes a first through hole 1-1; as shown in fig. 15, step 1105 is performed to flow a corrosive fluid through the first via, the second via, and the third via to the substrate etch cavity to release the bulk acoustic wave resonator.
According to the embodiment of the invention, the bottom electrode is directly deposited on the substrate, so that the thinner piezoelectric material can have good crystal face orientation and lower surface roughness; a sacrificial layer process, a substrate back surface photoetching process and a Bragg reflection layer are not needed, so that the process is simpler; the vibration of the piezoelectric material film and the electrode at the edge of the resonator is weakened by using the substrate, so that the parasitic mode is suppressed; when the first through hole, the second through hole and the third through hole are all circular, the three-dimensional structure of the bulk acoustic wave resonator neglecting the top electrode leading-out electrode and the bottom electrode leading-out electrode can be formed by rotating a two-dimensional geometric model around a central shaft, and modeling simulation is facilitated. The embodiment of the invention can flexibly adjust the area of the upper surface of the substrate material cavity to be close to or even smaller than the area of the effective area of the bulk acoustic wave resonator, ensures that the area supported by the substrate exists between the adjacent resonators under the condition of extremely small distance between the adjacent resonators, effectively relieves the bending problem of the piezoelectric resonator electrode and the piezoelectric material film in the ultrahigh frequency filter with high integration level, and further improves the electrical characteristics of the resonators and the filter.
"one of ordinary skill in the art will appreciate that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art. ".
Claims (11)
1. A bulk acoustic wave resonator comprising: the piezoelectric ceramic comprises a top electrode (1), a piezoelectric material film (2), a bottom electrode (3) and a substrate (4); wherein the content of the first and second substances,
more than one first through hole (1-1) is formed in the area defined by the peripheral outline of the top electrode (1), and more than one second through hole (2-1) is formed in the piezoelectric material film (2); more than one third through hole (3-1) is arranged in the area defined by the outer peripheral outline of the bottom electrode (3);
wherein the first via (1-1), the second via (2-1) and the third via (3-1) are used for etching corrosive fluids of a cavity on a substrate (4); the overlapping area of a first projection area of the second through hole (2-1) on the area defined by the peripheral contour of the top electrode (1) and the first through hole (1-1) is a first hollow area; the overlapping area of a second projection area of the second through hole (2-1) on the area defined by the peripheral outline of the bottom electrode (3) and the third through hole (3-1) is a second hollow area.
2. The bulk acoustic wave resonator according to claim 1, characterized in that the film (2) of piezoelectric material is composed of one or more layers of any one of the following piezoelectric materials:
aluminum nitride, scandium-doped aluminum nitride, lithium niobate, lithium tantalate, and lead zirconate titanate.
3. The bulk acoustic resonator according to claim 1, characterized in that the projections of the top electrode (1) onto the plane of the top of the bottom electrode (3) are all located within the area defined by the peripheral contour of the bottom electrode (3).
4. The bulk acoustic resonator according to claim 1, characterized in that the ratio of the area of the first through hole (1-1) to the area of the peripheral outline-bounding region of the top electrode (1) is a first preset ratio;
the ratio of the area of the second through hole (2-1) to the area of the peripheral outline delineating region of the top electrode (1) is a second preset ratio;
the ratio of the area of the third through hole (3-1) to the area of the peripheral outline delineating region of the top electrode (1) is a third preset ratio;
wherein the first predetermined ratio is greater than 0.001 but less than 0.7; the second predetermined ratio is greater than 0.001 but less than 0.7; the third predetermined ratio is greater than 0.001 but less than 0.7.
5. The bulk acoustic resonator according to claim 1, characterized in that the ratio of the area of the upper surface of the cavity on the substrate (4) to the area of the area circumscribed by the peripheral outline of the top electrode (1) is a fourth predetermined ratio;
wherein the fourth predetermined ratio is greater than 0.8 but less than 4.
6. The bulk acoustic resonator according to claim 1, characterized in that the ratio of the area of the first hollowed-out area to the area of the peripherally contoured circumscribing area of the top electrode (1) is a fifth predetermined ratio;
the ratio of the area of the second hollow area to the area of the peripheral outline delineating area of the top electrode (1) is a sixth preset ratio;
wherein the fifth predetermined ratio is greater than 0.001 but less than 0.7; the sixth predetermined ratio is greater than 0.001 but less than 0.7.
7. The bulk acoustic wave resonator according to claim 1, characterized in that the first via hole (1-1) is in any one of the following shapes: circular, elliptical, regular polygonal, trapezoidal and pentagonal;
the second through hole (2-1) is in any one of the following shapes: circular, elliptical, regular polygonal, trapezoidal and pentagonal;
the third through hole (3-1) is in any one of the following shapes: circular, elliptical, regular polygonal, trapezoidal and pentagonal.
8. The bulk acoustic wave resonator according to any of claims 1 to 7, characterized in that the top electrode (1) consists of one or more layers of conductive material; and/or the presence of a gas in the gas,
the bottom electrode (3) is composed of one or more layers of conductive materials.
9. The bulk acoustic resonator according to any one of claims 1 to 7, further comprising a top electrode extraction electrode (5);
an isolation layer (6) or a cavity (7) is arranged between the top electrode leading-out electrode (5) and the piezoelectric material film (2); alternatively, the first and second electrodes may be,
a notch (3-2) with a preset shape is arranged at the position of the fourth projection area of the top electrode leading-out electrode (5) on the bottom electrode (3);
wherein the area of the gap (3-2) comprises the fourth projection area; the isolation layer (6) or the cavity (7) is used for isolating the top electrode extraction electrode (5) and the piezoelectric material film (2).
10. The bulk acoustic wave resonator according to any one of claims 1 to 7, further comprising a top electrode extraction electrode (5) and a bottom electrode extraction electrode (8), wherein the piezoelectric material film (2) is etched with an isolation groove (2-2);
the projection of the isolation groove (2-2) on the plane where the top of the bottom electrode (3) is located in an area formed by the bottom electrode (3) and the bottom electrode extraction electrode (8); the isolation groove (2-2) is positioned in a middle area formed by the outer peripheral outline of an area formed by the bottom electrode (3) and the bottom electrode extraction electrode (8) and the outer peripheral outline of the top electrode (1).
11. A method for preparing a bulk acoustic wave resonator comprises the following steps:
depositing a bottom electrode material and a bottom electrode extraction electrode material on the upper surface of the substrate, and carrying out graphical processing to obtain a bottom electrode extraction electrode and a bottom electrode containing a third through hole;
preparing a piezoelectric material film on the upper surface of the bottom electrode material;
etching the piezoelectric material film to obtain a second through hole;
depositing a top electrode material and a top electrode lead-out electrode material on the upper surface of the piezoelectric material film, and carrying out graphical processing to obtain a top electrode lead-out electrode and a top electrode comprising a first through hole;
corrosive fluid flows to the substrate etching cavity through the first through hole, the second through hole and the third through hole, and the bulk acoustic wave resonator is released;
the overlapping area of a first projection area of the second through hole on the area defined by the peripheral outline of the top electrode and the first through hole is a first hollow area; and the overlapping area of a second projection area of the second through hole on the area defined by the peripheral outline of the bottom electrode and the third through hole is a second hollow area.
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