CN114005926A - Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof - Google Patents
Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof Download PDFInfo
- Publication number
- CN114005926A CN114005926A CN202111269510.5A CN202111269510A CN114005926A CN 114005926 A CN114005926 A CN 114005926A CN 202111269510 A CN202111269510 A CN 202111269510A CN 114005926 A CN114005926 A CN 114005926A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- emitting diode
- thickness
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 156
- 229910052751 metal Inorganic materials 0.000 claims abstract description 156
- 230000004888 barrier function Effects 0.000 claims abstract description 41
- 230000008020 evaporation Effects 0.000 claims description 68
- 238000001704 evaporation Methods 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 58
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 16
- 230000017525 heat dissipation Effects 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 339
- 239000000463 material Substances 0.000 description 13
- 239000010931 gold Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 238000003892 spreading Methods 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- 229910009815 Ti3O5 Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- -1 light emitting diode Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Abstract
The invention relates to the technical field of semiconductors, in particular to a heat conduction layer, a light emitting diode, a semiconductor device and a preparation method thereof. The heat conduction layer of the light emitting diode comprises a metal bonding layer, a metal reflection layer, a metal barrier layer and a heat conduction metal layer which are sequentially arranged. According to the invention, the heat conduction layer is arranged to play a role in improving the heat conduction coefficient of the chip, so that the heat dissipation effect is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a heat conduction layer, a light emitting diode, a semiconductor device and a preparation method thereof.
Background
A Light Emitting Diode (abbreviated as LED) is a semiconductor Light Emitting device manufactured by using the P-N junction electroluminescence principle of a semiconductor. The LED has the advantages of no pollution, high brightness, low power consumption, long service life, low working voltage, easy miniaturization and the like. Since the development of gallium nitride (GaN) -based LEDs was successful in the 90 s of the 20 th century, the luminance of LEDs has been increasing with the progress of research, and the application field has become wider. With the increasing efficiency of power GaN-based LEDs, it is an unsettling trend to replace the existing illumination sources with GaN-based LED semiconductor lamps. However, semiconductor lighting is going to enter thousands of households, and many problems need to be solved, wherein the most central problem is the service life caused by uneven light emitting efficiency and heat dissipation.
In the prior art, a method for improving heat dissipation of a diode includes: the original BT (Bismaleimide Triazine, BT resin substrate material) plate is replaced by a high-thermal-conductivity material in the LED die bonding area, and the high-thermal-conductivity material is copper, ceramic or other thermal-conductivity materials. The LED chip is fixedly crystallized on the high-heat-conduction material, and the high-temperature glue covers the LED chip to enable the LED chip to be directly contacted with the high-heat-conduction material, so that heat generated by the LED can be quickly conducted downwards to the driving plate, and the heat dissipation performance is improved. The technical problems of poor heat-conducting property (45W/mk) and poor packaging and heat-dissipating effects of a chip in the prior art exist.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The invention aims to provide a heat conduction layer of a light emitting diode, which aims to solve the technical problems of poor heat conduction performance of a chip and poor packaging and heat dissipation effects in the prior art; the heat conduction layer can improve the heat conduction coefficient of the chip, and further plays a role in improving the heat conduction performance of the chip.
Another object of the present invention is to provide a light emitting diode with good heat dissipation effect.
Another object of the present invention is to provide a semiconductor device having an excellent heat dissipation effect.
Another object of the present invention is to provide a method for manufacturing a semiconductor device, which is simple and easy to implement.
In order to achieve the above purpose of the present invention, the following technical solutions are adopted:
the heat conducting layer comprises a metal bonding layer, a metal reflecting layer, a metal blocking layer and a heat conducting gold layer which are sequentially arranged.
In one embodiment, the metallic bonding layer includes at least one of a Ti layer, a Cr layer, and a Rh layer;
and/or the thickness of the metal bonding layer is 10-50A.
In one embodiment, the metal reflective layer comprises an Al layer and/or an Ag layer;
and/or the thickness of the metal reflecting layer is 16-20 KA.
In one embodiment, the thermally conductive metal layer comprises an Au layer and/or a Cu layer;
and/or the thickness of the heat-conducting metal layer is 9-20 KA.
In one embodiment, the metal barrier layer includes at least one of a Pt layer, a Ti layer, and a Ni layer;
in one embodiment, the thickness of the metal barrier layer is 4.7KA to 10.3 KA;
in one embodiment, the metal barrier layer includes a first Ti layer, a first Pt layer, a second Ti layer, and a first Ni layer in this order, and the first Ti layer is connected to the metal reflective layer;
in one embodiment, the first Ti layer has a thickness of 1.5KA to 2.5KA, the first Pt layer has a thickness of 1.5KA to 2.5KA, the second Ti layer has a thickness of 0.2KA to 0.8KA, and the first Ni layer has a thickness of 2KA to 5 KA.
A light emitting diode comprising at least:
the LED light-emitting unit at least comprises a substrate and a light-emitting diode (LED) light-emitting unit, wherein the substrate is provided with an upper surface and a lower surface; the epitaxial structure layer at least comprises an N-type semiconductor layer, a multi-quantum well active layer and a P-type semiconductor layer; the P electrode is arranged on the epitaxial structure layer and is electrically connected with the P type semiconductor layer; the N electrode is arranged on the epitaxial structure layer and is electrically connected with the N-type semiconductor layer;
and the heat conduction layer is arranged on the lower surface of the substrate and sequentially comprises the metal bonding layer, the metal reflection layer, the metal barrier layer and the heat conduction metal layer in the direction away from the epitaxial structure layer.
Preferably, a DBR reflective layer is further included between the lower surface of the substrate and the thermally conductive layer.
A semiconductor device comprises the light emitting diode and a bearing substrate for bearing the light emitting diode.
A method of making a semiconductor device, comprising:
(1) LED light-emitting unit forming: the method comprises the steps of epitaxial structure growth, electrode manufacturing and heat conduction layer deposition, and specifically comprises the following steps:
firstly, providing a growth substrate, wherein the growth substrate comprises an upper surface and a lower surface, and epitaxially growing an N-type semiconductor layer, a multi-quantum well active layer and a P-type semiconductor layer on the upper surface of the substrate;
secondly, manufacturing electrodes, and forming a P electrode electrically connected with the P type semiconductor layer and an N electrode electrically connected with the N type semiconductor layer on the epitaxial structure;
finally, the metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat conducting metal layer are sequentially deposited on the lower surface of the substrate;
(2) and a step of bonding with a bearing substrate: and providing a bearing substrate, and fixing the LED light-emitting unit on the bearing substrate through an adhesive.
In one embodiment, the deposition conditions of the metal bonding layer include: the evaporation rate is 0.4A/S-0.6A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;
in one embodiment, the evaporation conditions of the metal reflective layer include: the evaporation rate is 4.5A/S-5.5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;
in one embodiment, the evaporation conditions of the metal barrier layer include: the evaporation rate is 0.5A/S-5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-70 ℃;
in one embodiment, the evaporation conditions of the heat conductive metal layer include: the evaporation rate is 14A/S-16A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃.
In one embodiment, the metal barrier layer has a Ti layer deposition rate of 0.4A/S to 0.6A/S, a Pt layer deposition rate of 0.6A/S to 0.8A/S, and a Ni layer deposition rate of 5.5A/S to 6.5A/S.
Compared with the prior art, the invention has the beneficial effects that:
(1) the light-emitting diode is provided with the metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat-conducting metal layer, and the layers are mutually coordinated and matched to play a role, so that the heat conductivity coefficient of a chip can be improved, and the function of improving the heat conductivity of the chip is further played; in addition, the use of noble metals is reduced, and the cost is saved.
(2) The light-emitting diode provided by the invention contains the heat conduction layer, has good light reflection effect and heat dissipation effect, improves the light-emitting efficiency of the light-emitting diode and prolongs the service life of the light-emitting diode.
(3) The semiconductor device of the invention also has excellent heat dissipation effect, and the preparation method is simple and easy to implement.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a light emitting diode according to the present invention;
fig. 2 is a schematic structural diagram of a semiconductor device of the present invention.
Reference numerals:
the LED comprises a 1-light emitting diode, a 2-bearing substrate, a 3-heat conduction layer, a 31-metal bonding layer, a 32-metal reflection layer, a 33-metal barrier layer, a 34-heat conduction metal layer, a 4-substrate, a 5-epitaxial structure, a 51-N type semiconductor layer, a 52-multi-quantum well active layer, a 53-P type semiconductor layer, a 6-electrode structure, a 61-current expansion layer, a 62-P electrode, a 63-N electrode and a 7-packaging structure.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
According to one aspect of the invention, the invention relates to a heat conducting layer of a light emitting diode, wherein the heat conducting layer comprises a metal bonding layer, a metal reflecting layer, a metal barrier layer and a heat conducting metal layer which are sequentially arranged.
The light-emitting diode is sequentially provided with the metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat-conducting metal layer, and the layers are mutually coordinated and matched to play a role, so that the heat conductivity coefficient of a chip can be improved, and the function of improving the heat conductivity of the chip is further played; in addition, the use of noble metals is reduced, and the cost is saved.
In some embodiments, the metallic bonding layer includes at least one of a Ti layer, a Cr layer, and a Rh layer.
The metal bonding layer is arranged to increase the adhesion of the electrode, so that the metal electrode and the substrate form ohmic contact.
In some embodiments, the metal bonding layer may be a Ti layer, a Cr layer, or an Rh layer, or a combination of a Ti layer and a Cr layer, or a Ti layer and an Rh layer, or a combination of a Ti layer, a Cr layer, and an Rh layer in that order, or a Cr layer, an Rh layer, a Cr layer, and a Ti layer in that order, etc., i.e., may be a repeating stack of layers of different materials.
In some embodiments, the metal bonding layer has a thickness of 10A to 50A. The thickness of the metal bonding layer of the present invention is specifically 12A, 15A, 17A, 20A, 22A, 25A, 27A, 30A, 32A, 35A, 37A, 40A, 42A, 45A, 47A, or 49A, but other values within the above range may be selected, and the thickness is not limited herein. According to the invention, the metal bonding layer with a proper thickness is arranged, so that the effect of increasing the electrode adhesion can be better played.
In some embodiments, the metal reflective layer comprises an Al layer and/or an Ag layer.
The metal reflecting layer can reflect the light transmitted to the bottom back to the interior of the chip, and finally reflects the light out of the chip, so that the light emitting efficiency is improved.
In some embodiments, the metal reflective layer may be an Al layer or an Ag layer, or an Al layer and an Ag layer in this order, or an Al layer, an Ag layer, and an Al layer in this order, and so on, i.e., may be a repeated stack of different material layers.
In some embodiments, the metal reflective layer has a thickness of 16KA to 20 KA. The thickness of the metal reflective layer is specifically 16.2KA, 16.5KA, 16.7KA, 17KA, 17.5KA, 18KA, 18.5KA, 19KA, 19.5KA, or 19.7KA, etc., although other values within the above range may be selected, and is not limited herein. The metal reflecting layer with the thickness can better improve the light emitting efficiency.
In some embodiments, the thermally conductive metal layer comprises an Au layer and/or a Cu layer.
The heat-conducting metal layer has high heat-conducting performance and needs to meet the requirement of inactive property.
In some embodiments, the heat-conducting metal layer may be an Au layer or a Cu layer, or an Au layer and a Cu layer in sequence, or an Au layer, a Cu layer and an Au layer in sequence, and so on, that is, may be a repeated superposition of different material layers.
In some embodiments, the thickness of the heat-conducting metal layer is 9KA to 20 KA. The thickness of the heat-conducting metal layer is specifically 10KA, 11KA, 12KA, 13KA, 14KA, 15KA, 16KA, 17KA, 18KA, 19KA, or 20KA, and other values within the above range may be selected, which is not limited herein. The invention adopts the heat-conducting metal layer with the thickness range, and can achieve better heat-conducting effect.
In some embodiments, the metal barrier layer includes at least one of a Pt layer, a Ti layer, and a Ni layer.
Pt is a good atomic diffusion barrier but there is no way to plate thicker due to the higher stress. Therefore, the combination of Ti and Ni and/or the combination of Ti and Pt can be used as the barrier layer of the metal reflecting layer to prevent the metal of the metal reflecting layer from diffusing upwards, and the barrier layer has higher reliability than the barrier layer which directly uses Pt and can achieve better barrier effect.
In some embodiments, the metal barrier layer has a thickness of 4.7KA to 10.3 KA. The thickness of the metal barrier layer is specifically 5KA, 5.5KA, 6KA, 6.5KA, 7KA, 7.5KA, 8KA, 9KA, or 10 KA.
In some embodiments, the metal barrier layer includes a first Ti layer, a first Pt layer, a second Ti layer, and a first Ni layer in this order, and the first Ti layer is connected to the metal reflective layer.
In some embodiments, the first Ti layer has a thickness of 1.5KA to 2.5KA, the first Pt layer has a thickness of 1.5KA to 2.5KA, the second Ti layer has a thickness of 0.2KA to 0.8KA, and the first Ni layer has a thickness of 2KA to 5 KA.
According to the invention, the metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat-conducting metal layer with proper thicknesses are arranged, and the layers are mutually coordinated and matched to play a role, so that the heat conductivity coefficient of the chip can be improved, and the heat-conducting property of the chip can be further improved.
According to another aspect of the invention, the invention also relates to a light emitting diode comprising at least:
the LED light-emitting unit at least comprises a substrate and a light-emitting diode (LED) light-emitting unit, wherein the substrate is provided with an upper surface and a lower surface; the epitaxial structure layer at least comprises an N-type semiconductor layer, a multi-quantum well active layer and a P-type semiconductor layer; the P electrode is arranged on the epitaxial structure layer and is electrically connected with the P type semiconductor layer; the N electrode is arranged on the epitaxial structure layer and is electrically connected with the N-type semiconductor layer;
and the heat conduction layer is arranged on the lower surface of the substrate and sequentially comprises the metal bonding layer, the metal reflection layer, the metal barrier layer and the heat conduction metal layer in the direction away from the epitaxial structure layer.
The LED light-emitting unit further comprises a current spreading layer, and the current spreading layer comprises a P electrode current spreading layer and/or an N electrode current spreading layer. The N electrode current spreading layer is in direct contact with the N type semiconductor layer, and the P electrode current spreading layer is in direct contact with the P type semiconductor layer.
According to the invention, the alloy is plated on one surface of the substrate, so that the effect of improving the heat conductivity coefficient of the raw material is achieved, and the effect of improving the heat dissipation performance of the chip is achieved.
Substrates of the present invention include, but are not limited to, sapphire and silicon carbide.
According to another embodiment of the present invention, a DBR reflective layer is further included between the lower surface of the substrate and the thermally conductive layer. The reflective layer may be composed of alternating layers of high and low refractive index materials. Wherein the high refractive index layer material is selected from TiO and TiO2、Ti3O5、Ti2O3、Ta2O5、ZrO2Or any combination of the foregoing; the material of the low refractive index layer is selected from SiO2、SiNx、Al2O3Or any combination of the foregoing.
According to another aspect of the invention, the invention also relates to a semiconductor device, which comprises the light emitting diode and a bearing substrate for bearing the light emitting diode.
The carrier substrate may be a Printed Circuit Board (PCB), a flexible printed circuit board (FCB), a ceramic substrate, or a composite substrate. Besides being responsible for bearing the light emitting diode, the heat generated by the light emitting diode is further led out, and the heat dissipation effect is further achieved. The light emitting diodes may be a quaternary or ternary series of light emitting diodes that emit light in the colors red, blue, green, yellow, etc.
Further, the semiconductor device further comprises a packaging structure. The packaging structure is formed by forming a transparent packaging material on the light emitting diode by using a dispensing technology, and then heating and hardening the transparent packaging material for forming; the transparent encapsulating material is an organic insulating material with high light penetration characteristic, such as epoxy resin (epoxy), polyimide (Poly-imide), silicon gel (silicon resin), or a mixture thereof.
According to another aspect of the present invention, the present invention also relates to a method for manufacturing a semiconductor device, comprising:
(1) LED light-emitting unit forming: the method comprises the steps of epitaxial structure growth, electrode manufacturing and heat conduction layer deposition, and specifically comprises the following steps:
firstly, providing a growth substrate, wherein the growth substrate comprises an upper surface and a lower surface, and epitaxially growing an N-type semiconductor layer, a multi-quantum well active layer and a P-type semiconductor layer on the upper surface of the substrate;
secondly, manufacturing electrodes, and forming a P electrode electrically connected with the P type semiconductor layer and an N electrode electrically connected with the N type semiconductor layer on the epitaxial structure;
finally, the metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat conducting metal layer are sequentially deposited on the lower surface of the substrate;
(2) and a step of bonding with a bearing substrate: and providing a bearing substrate, and fixing the LED light-emitting unit on the bearing substrate through an adhesive.
The preparation method of the semiconductor device is simple and easy to implement.
In some embodiments, the thermally conductive layer is disposed on the substrate by evaporation.
The metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat conducting metal layer in the heat conducting layer are plated layer by layer in an evaporation mode.
In one embodiment, the deposition conditions of the metal bonding layer include: the evaporation rate is 0.4A/S-0.6A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;
in one embodiment, the evaporation conditions of the metal reflective layer include: the evaporation rate is 4.5A/S-5.5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;
in one embodiment, the evaporation conditions of the metal barrier layer include: the evaporation rate is 0.5A/S-5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-70 ℃;
in one embodiment, the evaporation conditions of the heat conductive metal layer include: the evaporation rate is 14A/S-16A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃.
In one embodiment, the metal barrier layer has a Ti layer deposition rate of 0.4A/S to 0.6A/S, a Pt layer deposition rate of 0.6A/S to 0.8A/S, and a Ni layer deposition rate of 5.5A/S to 6.5A/S.
According to the invention, through the arrangement of the evaporation conditions, the plating of each layer in the heat conduction layer can be better realized, and the heat conduction effect of the diode, namely the heat dissipation effect of the diode is improved.
The invention will be further explained with reference to specific examples.
Fig. 1 is a schematic structural diagram of a light emitting diode according to the present invention.
Fig. 2 is a schematic structural diagram of a semiconductor device of the present invention.
Example 1
A light emitting diode 1 comprising: an LED light-emitting unit, the said LED light-emitting unit includes the substrate 4 at least, have a upper surface and a lower surface; an epitaxial structure 5 at least comprising an N-type semiconductor layer 51, a multi-quantum well active layer 52 and a P-type semiconductor layer 53; an electrode structure 6 comprising: a P-electrode 62 disposed on the epitaxial structure 5 layer and electrically connected to the P-type semiconductor layer 53, an N-electrode 63 disposed on the epitaxial structure 5 layer and electrically connected to the N-type semiconductor layer 51, and a current spreading layer 61, wherein the current spreading layer 61 is in direct contact with the P-type semiconductor layer 53;
the heat conduction layer 3 is arranged on the lower surface of the substrate 4 and sequentially comprises the metal bonding layer 31, the metal reflection layer 32, the metal barrier layer 33 and the heat conduction metal layer 34 in the direction away from the epitaxial structure 5 layer;
the metal bonding layer 31 is a Ti layer with the thickness of 10A;
the metal reflecting layer 32 is an Al layer and has the thickness of 16 KA;
the metal barrier layer 33 sequentially comprises a first Ti layer, a first Pt layer, a second Ti layer and a first Ni layer, and the first Ti layer is connected with the metal reflecting layer 32; the thickness of the first Ti layer is 1KA, the thickness of the first Pt layer is 2KA, the thickness of the second Ti layer is 0.5KA, and the thickness of the first Ni layer is 3 KA;
the heat conducting metal layer 34 is an Au layer with a thickness of 9 KA.
Example 2
A semiconductor device comprising the light emitting diode 1 of embodiment 1, a carrier substrate 2 for carrying the light emitting diode 1 and a package structure 7;
the preparation method of the semiconductor device comprises the following steps:
(1) LED light-emitting unit forming: the method comprises the steps of growing the epitaxial structure 5, manufacturing the electrode structure 6 and depositing the heat conduction layer 3, and specifically comprises the following steps:
firstly, providing a growth substrate 4 which comprises an upper surface and a lower surface, and epitaxially growing an N-type semiconductor layer 51, a multi-quantum well active layer 52 and a P-type semiconductor layer 53 on the upper surface of the substrate 4;
secondly, manufacturing electrodes, and forming a P electrode 62 electrically connected with the P-type semiconductor layer 53 and an N electrode 63 electrically connected with the N-type semiconductor layer 51 on the epitaxial structure 5;
finally, depositing a metal bonding layer 31, a metal reflecting layer 32, a metal barrier layer 33 and a heat conducting metal layer 34 on the lower surface of the substrate 4 in sequence;
the deposition conditions of the metal adhesive layer 31 include: the evaporation rate is 0.5A/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature;
the evaporation conditions of the metal reflective layer 32 include: the evaporation rate is 5A/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature;
the evaporation conditions of the metal barrier layer 33 include: the evaporation rate of the first Ti layer is 0.5A/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature; the evaporation rate of the first Pt layer is 0.7A/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature; the evaporation rate of the second Ti layer is 0.5A/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature; the evaporation rate of the first Ni layer is 6A/S, the vacuum degree is 1E-6pa, and the evaporation temperature is 70 ℃;
the evaporation conditions of the heat conductive metal layer 34 include: the evaporation rate is 15A/S, the vacuum degree is 1E-6pa, and the evaporation temperature is normal temperature.
(2) Bonding with the carrier substrate 2: providing a bearing substrate 2, and fixing the LED light-emitting unit on the bearing substrate 2 through an adhesive; and then the light emitting diode 1 is packaged by the packaging structure 7.
Example 3
A light emitting diode 1 is provided, except that the metal bonding layer 31 is a Cr layer, the metal reflecting layer 32 is an Ag layer, the metal blocking layer 33 is a first Ti layer and a first Pt layer in sequence, the heat conducting metal is a Cu layer, and other conditions are the same as those of embodiment 1.
A semiconductor device comprising the light emitting diode 1 of the present embodiment, and a carrier substrate 2 and a package structure 7 for carrying the light emitting diode 1;
the semiconductor device was fabricated in the same manner as in example 2.
Example 4
A light-emitting diode 1, except that the metal bond coat 31 is Ti layer and Rh layer, the thickness of Ti layer is 15A, the thickness of Rh layer is 20A; the metal reflecting layer 32 is an Al layer and an Ag layer, the thickness of the Al layer is 10KA, and the thickness of the Ag layer is 10 KA; the heat conductive metal layer 34 is an Au layer and a Cu layer, the thickness of the Au layer is 10KA, the thickness of the Cu layer is 10KA, and other conditions are the same as those in embodiment 1.
A semiconductor device comprising the light emitting diode 1 of the present embodiment, and a carrier substrate 2 for carrying the light emitting diode 1;
the semiconductor device was fabricated in the same manner as in example 2.
Example 5
A light-emitting diode 1, except the thickness of the metal bonding layer 31 is 30A, the thickness of the metal reflecting layer 32 is 18KA, the thickness of the first Ti layer is 1.5KA, the thickness of the first Pt layer is 2.5KA, the thickness of the second Ti layer is 0.7KA, and the thickness of the first Ni layer is 5 KA; the thickness of the heat-conducting metal layer 34 is 15 KA; the evaporation rate of the metal bonding layer 31 is 0.4A/S; the evaporation rate of the metal reflecting layer 32 is 6A/S; in the metal barrier layer 33, the evaporation rate of the first Ti layer is 0.6A/S, the evaporation rate of the first Pt layer is 0.8A/S, the evaporation rate of the second Ti layer is 0.4A/S, and the evaporation rate of the first Ni layer is 5.5A/S; the evaporation rate of the heat conductive metal layer 34 was 16A/S, and the other conditions were the same as in example 1.
A semiconductor device comprising the light emitting diode 1 of the present embodiment, and a carrier substrate 2 and a package structure 7 for carrying the light emitting diode 1;
the semiconductor device was fabricated in the same manner as in example 2.
Example 6
A light-emitting diode 1, except the thickness of the metal bonding layer 31 is 50A, the thickness of the metal reflecting layer 32 is 20KA, the thickness of the first Ti layer is 2KA, the thickness of the first Pt layer is 1.5KA, the thickness of the second Ti layer is 0.3KA, and the thickness of the first Ni layer is 4 KA; the thickness of the heat-conducting metal layer 34 is 16 KA; the evaporation rate of the metal bonding layer 31 is 0.6A/S; the evaporation rate of the metal reflecting layer 32 is 8A/S; in the metal barrier layer 33, the evaporation rate of the first Ti layer is 0.4A/S, the evaporation rate of the first Pt layer is 0.6A/S, the evaporation rate of the second Ti layer is 0.6A/S, and the evaporation rate of the first Ni layer is 6.5A/S; the evaporation rate of the heat conductive metal layer 34 was 14A/S, and the other conditions were the same as in example 1.
A semiconductor device comprising the light emitting diode 1 of the present embodiment, and a carrier substrate 2 and a package structure 7 for carrying the light emitting diode 1;
the semiconductor device was fabricated in the same manner as in example 2.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The heat conduction layer of the light-emitting diode is characterized by comprising a metal bonding layer, a metal reflection layer, a metal barrier layer and a heat conduction metal layer which are sequentially arranged.
2. A thermally conductive layer of a light emitting diode according to claim 1, wherein the metallic bonding layer comprises at least one of a Ti layer, a Cr layer, and a Rh layer;
and/or the thickness of the metal bonding layer is 10-50A.
3. A thermally conductive layer of a light emitting diode according to claim 1, wherein the metal reflective layer comprises an Al layer and/or an Ag layer;
and/or the thickness of the metal reflecting layer is 16-20 KA.
4. The thermally conductive layer of a light emitting diode of claim 1, wherein the thermally conductive metal layer comprises an Au layer and/or a Cu layer;
and/or the thickness of the heat-conducting metal layer is 9-20 KA.
5. A heat conductive layer for a light emitting diode according to claim 1, characterized by comprising at least one of the following features (1) to (4):
(1) the metal barrier layer comprises at least one of a Pt layer, a Ti layer and a Ni layer;
(2) the thickness of the metal barrier layer is 4.7-10.3 KA;
(3) the metal barrier layer sequentially comprises a first Ti layer, a first Pt layer, a second Ti layer and a first Ni layer, and the first Ti layer is connected with the metal reflecting layer;
(4) the thickness of the first Ti layer is 1.5-2.5 KA, the thickness of the first Pt layer is 1.5-2.5 KA, the thickness of the second Ti layer is 0.2-0.8 KA, and the thickness of the first Ni layer is 2-5 KA.
6. A light emitting diode, comprising at least:
the LED light-emitting unit at least comprises a substrate and a light-emitting diode (LED) light-emitting unit, wherein the substrate is provided with an upper surface and a lower surface; the epitaxial structure layer at least comprises an N-type semiconductor layer, a multi-quantum well active layer and a P-type semiconductor layer; the P electrode is arranged on the epitaxial structure layer and is electrically connected with the P type semiconductor layer; the N electrode is arranged on the epitaxial structure layer and is electrically connected with the N-type semiconductor layer;
and the heat conduction layer is arranged on the lower surface of the substrate and sequentially comprises the metal bonding layer, the metal reflection layer, the metal barrier layer and the heat conduction metal layer in the direction far away from the epitaxial structure layer according to any one of claims 2 to 5.
7. A semiconductor device comprising the light-emitting diode according to claim 6, and a carrier substrate for carrying the light-emitting diode.
8. A method of manufacturing a semiconductor device, comprising:
(1) LED light-emitting unit forming: the method comprises the steps of epitaxial structure growth, electrode manufacturing and heat conduction layer deposition, and specifically comprises the following steps:
firstly, providing a growth substrate, wherein the growth substrate comprises an upper surface and a lower surface, and epitaxially growing an N-type semiconductor layer, a multi-quantum well active layer and a P-type semiconductor layer on the upper surface of the substrate;
secondly, manufacturing electrodes, and forming a P electrode electrically connected with the P type semiconductor layer and an N electrode electrically connected with the N type semiconductor layer on the epitaxial structure;
finally, depositing the metal bonding layer, the metal reflecting layer, the metal barrier layer and the heat conducting metal layer in sequence on the lower surface of the substrate according to any one of claims 2 to 5;
(2) and a step of bonding with a bearing substrate: and providing a bearing substrate, and fixing the LED light-emitting unit on the bearing substrate through an adhesive.
9. The method for manufacturing a semiconductor device according to claim 8, comprising at least one of the following features (1) to (4):
(1) the evaporation conditions of the metal bonding layer comprise: the evaporation rate is 0.4A/S-0.6A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;
(2) the evaporation conditions of the metal reflecting layer comprise: the evaporation rate is 4.5A/S-5.5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃;
(3) the evaporation conditions of the metal barrier layer comprise: the evaporation rate is 0.5A/S-5A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-70 ℃;
(4) the evaporation conditions of the heat-conducting metal layer comprise: the evaporation rate is 14A/S-16A/S, the vacuum degree is more than 0 and less than or equal to 1E-6pa, and the evaporation temperature is 25-30 ℃.
10. The method for manufacturing a semiconductor device according to claim 9, wherein in the metal barrier layer, a deposition rate of the Ti layer is 0.4A/S to 0.6A/S, a deposition rate of the Pt layer is 0.6A/S to 0.8A/S, and a deposition rate of the Ni layer is 5.5A/S to 6.5A/S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269510.5A CN114005926B (en) | 2021-10-29 | 2021-10-29 | Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269510.5A CN114005926B (en) | 2021-10-29 | 2021-10-29 | Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114005926A true CN114005926A (en) | 2022-02-01 |
| CN114005926B CN114005926B (en) | 2024-02-27 |
Family
ID=79925005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111269510.5A Active CN114005926B (en) | 2021-10-29 | 2021-10-29 | Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114005926B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020063521A1 (en) * | 1997-11-17 | 2002-05-30 | Salam Hassan Paddy Abdel | High power led lamp |
| US20070278496A1 (en) * | 2006-06-05 | 2007-12-06 | Yuh-Ren Shieh | Light emitting diode |
| US20080283859A1 (en) * | 2007-05-18 | 2008-11-20 | Delta Electronics, Inc. | Light-emitting diode apparatus and manufacturing method thereof |
| CN201450017U (en) * | 2008-12-26 | 2010-05-05 | 世纪晶源科技有限公司 | Single electrode LED chip structure |
| KR20100090830A (en) * | 2009-02-09 | 2010-08-18 | 주식회사 두성에이텍 | Method of manufacturing light emitting diode unit and light emitting diode unit manufactured by the method |
| US20100301359A1 (en) * | 2009-05-26 | 2010-12-02 | Ming-Hsiung Liu | Light Emitting Diode Package Structure |
| CN101929610A (en) * | 2008-12-26 | 2010-12-29 | 深圳世纪晶源华芯有限公司 | Large-power forward LED chip structure |
| CN102185075A (en) * | 2011-04-07 | 2011-09-14 | 大连美明外延片科技有限公司 | Light-emitting diode with bonding reflecting layer and manufacturing method thereof |
| CN103746047A (en) * | 2013-12-13 | 2014-04-23 | 华灿光电(苏州）有限公司 | A light emitting diode manufacturing method and a light emitting diode produced by adopting the method |
| CN104916771A (en) * | 2014-03-12 | 2015-09-16 | 山东浪潮华光光电子股份有限公司 | Substrate-replaced normally-mounted GaN-based light-emitting diode chip and preparation method thereof |
| CN108538981A (en) * | 2018-03-26 | 2018-09-14 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108767102A (en) * | 2018-03-26 | 2018-11-06 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
-
2021
- 2021-10-29 CN CN202111269510.5A patent/CN114005926B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020063521A1 (en) * | 1997-11-17 | 2002-05-30 | Salam Hassan Paddy Abdel | High power led lamp |
| US20070278496A1 (en) * | 2006-06-05 | 2007-12-06 | Yuh-Ren Shieh | Light emitting diode |
| US20080283859A1 (en) * | 2007-05-18 | 2008-11-20 | Delta Electronics, Inc. | Light-emitting diode apparatus and manufacturing method thereof |
| CN201450017U (en) * | 2008-12-26 | 2010-05-05 | 世纪晶源科技有限公司 | Single electrode LED chip structure |
| CN101929610A (en) * | 2008-12-26 | 2010-12-29 | 深圳世纪晶源华芯有限公司 | Large-power forward LED chip structure |
| KR20100090830A (en) * | 2009-02-09 | 2010-08-18 | 주식회사 두성에이텍 | Method of manufacturing light emitting diode unit and light emitting diode unit manufactured by the method |
| US20100301359A1 (en) * | 2009-05-26 | 2010-12-02 | Ming-Hsiung Liu | Light Emitting Diode Package Structure |
| CN102185075A (en) * | 2011-04-07 | 2011-09-14 | 大连美明外延片科技有限公司 | Light-emitting diode with bonding reflecting layer and manufacturing method thereof |
| CN103746047A (en) * | 2013-12-13 | 2014-04-23 | 华灿光电(苏州）有限公司 | A light emitting diode manufacturing method and a light emitting diode produced by adopting the method |
| CN104916771A (en) * | 2014-03-12 | 2015-09-16 | 山东浪潮华光光电子股份有限公司 | Substrate-replaced normally-mounted GaN-based light-emitting diode chip and preparation method thereof |
| CN108538981A (en) * | 2018-03-26 | 2018-09-14 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108767102A (en) * | 2018-03-26 | 2018-11-06 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114005926B (en) | 2024-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10199360B2 (en) | Wire bond free wafer level LED | |
| US9716213B2 (en) | Thin film light emitting diode | |
| EP1936704B1 (en) | Semiconductor light emitting device package | |
| CN103594584B (en) | Light emitting semiconductor device and its manufacture method and luminaire | |
| KR100694784B1 (en) | Flip-chip electrode light-emitting element formed by multilayer coatings | |
| US8536584B2 (en) | High voltage wire bond free LEDS | |
| US9172002B2 (en) | Light-emitting device having a patterned substrate | |
| CN1731592A (en) | Flip-chip bonded structure light-emitting diode and its manufacture method | |
| KR100674875B1 (en) | Flip chip type light emitting device | |
| CN110444559B (en) | Micro-LED array and preparation method thereof | |
| CN114005926A (en) | Heat conduction layer, light emitting diode, semiconductor device and preparation method thereof | |
| US8455882B2 (en) | High efficiency LEDs | |
| KR101115533B1 (en) | Flip chip Light-emitting device and Method of manufacturing the same | |
| KR100707100B1 (en) | Light emitting diode and method for manufacturing there of | |
| CN104409601A (en) | Flip light-emitting diode chip with double reflection layers | |
| CN204257692U (en) | There is the upside-down mounting LED chip of double reflecting layers | |
| US20150084078A1 (en) | Light-Emitting Diode Having Diamond-Like Carbon Layer and Manufacturing Method and Application Thereof | |
| TW548857B (en) | A light-emitting semiconductor device with a surface-mounted and flip-chip structure | |
| KR102256630B1 (en) | A light emittng device package | |
| KR101611517B1 (en) | Led light module with improved reliability | |
| TW201205732A (en) | Package structure of LED light emitting device | |
| KR20100054501A (en) | Flip-chip type nitride semiconductor light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |