CN114005603A - Method for improving conductivity of nano-silver film - Google Patents
Method for improving conductivity of nano-silver film Download PDFInfo
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- CN114005603A CN114005603A CN202111287339.0A CN202111287339A CN114005603A CN 114005603 A CN114005603 A CN 114005603A CN 202111287339 A CN202111287339 A CN 202111287339A CN 114005603 A CN114005603 A CN 114005603A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
Abstract
The invention discloses a method for improving the conductivity of a nano-silver film, which is to prepare a nano-oxide film on a substrate, then prepare a nano-Ag film on the nano-oxide film and further obtain the substrate/oxide/Ag film. The method can obviously reduce the conductive threshold thickness of the nano Ag film and improve the conductivity of the nano Ag film.
Description
Technical Field
The invention relates to the field of nano-silver films, in particular to a method for improving the conductivity of a nano-silver film.
Background
Compared with the common silver film, the nano silver film has larger specific surface area and higher surface activity, is applied to the fields of biosensing, biomedicine, environmental management, catalysis, electric conduction, heat conduction and the like due to unique optical, electric and biological characteristics, and has wide application prospect.
Although bulk silver is good in conductivity, when scaled down to the nanometer scale, the conductivity of the nanosilver film is weak. At present, the threshold thickness (i.e. the minimum thickness for conducting) of the nano silver film is large, which limits the application of the nano silver film in the electrode. Therefore, the method for improving the conductivity of the nano-silver film and reducing the thickness of the conductivity threshold value has important significance for expanding the application of the nano-silver film.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method for improving the conductivity of a nano silver film, which aims to improve the conductivity of the nano silver film, reduce the conductive threshold thickness of the nano silver film and facilitate the wide application of the nano silver film in the aspect of electrodes.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for improving the conductivity of a nano-silver film is characterized by comprising the following steps: firstly, preparing a nano oxide film on a substrate, then preparing a nano Ag film on the nano oxide film, and further obtaining a substrate/oxide/Ag film (the structure of which is shown in figure 1), thereby reducing the conductive threshold thickness of the nano Ag film and improving the conductivity of the nano Ag film.
Further, the substrate includes, but is not limited to, glass.
Further, the nano oxide film is an insulating film, including but not limited to TiO2Thin film or CeO2A film. Therefore, the nano-oxide film on the substrate has no conductivity, and the conductivity of the substrate/oxide/Ag film only comes from the single-layer nano-Ag film.
Further, the preparation method of the substrate/oxide/Ag film includes but is not limited to vacuum evaporation plating, vacuum magnetron sputtering plating or chemical method.
Furthermore, when the nano Ag film is prepared by adopting the same parameters, the conductive threshold thickness of the nano Ag film on the substrate/oxide film is smaller than that of the nano Ag film on the substrate.
Furthermore, when the nanometer Ag film with the same thickness is prepared by adopting the same parameters, the sheet resistance of the substrate/oxide/Ag film is far smaller than that of the substrate/Ag film.
Further, a layer of oxide film can be further prepared on the substrate/oxide/Ag film to form a substrate/oxide/Ag/oxide film, the structure of which is shown in FIG. 2.
The invention has the beneficial effects that:
1. the structure of the substrate/Ag film is shown in FIG. 3, compared with the threshold thickness of the nano Ag film in the substrate/Ag film, the substrate/TiO film in the invention2Nano Ag film in Ag film is conductiveThe threshold thickness is effectively reduced by 20%.
2. When the nano Ag film is prepared by adopting the same parameters, the sheet resistance of the substrate/oxide/Ag film or the substrate/oxide/Ag/oxide film is far lower than that of the substrate/Ag film, and the conductivity of the nano Ag film is obviously improved by the substrate/oxide/Ag or the substrate/oxide/Ag/oxide film structure.
Drawings
FIG. 1 is a schematic structural diagram of a substrate/oxide/Ag thin film;
FIG. 2 is a schematic structural diagram of a substrate/oxide/Ag/oxide film;
FIG. 3 is a schematic view of the structure of the substrate/Ag film.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, specific embodiments accompanied with figures and examples are described in detail below. The following disclosure is merely exemplary and illustrative of the inventive concept, and those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.
Example 1
This example utilizes vacuum evaporation plating technique to prepare glass/Ag film, glass/TiO2Ag (8nm) film and glass/TiO2/Ag(8nm)/TiO2The structure of the film is respectively shown in fig. 3, fig. 1 and fig. 2, and the specific preparation process comprises the following steps:
step 1, ultrasonically cleaning a glass substrate, and drying for later use.
Step 2, vacuumizing a vacuum chamber of the evaporation coating machine, wherein when the pressure of the vacuum chamber is less than 1 multiplied by 10-3After Pa, plating 1nm TiO on the glass substrate2A film.
Step 3, when the pressure of the vacuum chamber is less than 1 multiplied by 10-3After Pa: in glass/TiO2Plating 8nm Ag film on the film to obtain glass/TiO2Ag (8nm) film; coating on glass substrateThe Ag films (8nm and 10nm) with the same thickness are obtained to obtain a glass/Ag (8nm) film and a glass/Ag (10nm) film,
step 4, in the glass/TiO2Further preparing a layer of TiO with the same thickness as the first layer on the/Ag (8nm) film2Thin film, glass/TiO obtained2/Ag(8nm)/TiO2A film.
And 5, testing the sheet resistance through a four-probe resistivity tester.
glass/Ag film, glass/TiO prepared in this example2Ag (8nm) film, glass/TiO2/Ag(8nm)/TiO2The sheet resistance of the film is shown in table 1, and it can be seen that: glass/TiO2Ag film and glass/TiO2/Ag/TiO2The conductive threshold thickness of the nano Ag film in the film is less than or equal to 8nm and is 10nm lower than the conductive threshold thickness of the nano Ag film in the substrate/Ag film; glass/TiO2(1nm)/Ag (8nm) and glass/TiO2(1nm)/Ag(8nm)/TiO2The sheet resistances of the (1nm) films are respectively 11.7 omega/sq and 12.1 omega/sq, the conductivity is excellent, and the glass/Ag (8nm) film is not conductive.
TABLE 1
Thus, in combination with table 1, it can be confirmed that: substrate/TiO2the/Ag film structure can reduce the threshold thickness of the nano Ag film by 20 percent, and obviously improve the conductivity of the nano Ag film.
The present invention is not limited to the above exemplary embodiments, and any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method for improving the conductivity of a nano-silver film is characterized by comprising the following steps: firstly, preparing a nano oxide film on a substrate, then preparing a nano Ag film on the nano oxide film, and further obtaining the substrate/oxide/Ag film, thereby reducing the conductive threshold thickness of the nano Ag film and improving the conductivity of the nano Ag film.
2. The method for improving the conductivity of the nano-silver thin film according to claim 1, wherein the method comprises the following steps: the nano oxide film is an insulating film.
3. The method for improving the conductivity of the nano-silver thin film according to claim 1 or 2, wherein the method comprises the following steps: the nano oxide film is TiO2Thin film or CeO2A film.
4. The method for improving the conductivity of the nano-silver thin film according to claim 1, wherein the method comprises the following steps: the preparation method of the substrate/oxide/Ag film is vacuum evaporation plating, vacuum magnetron sputtering plating or a chemical method.
5. The method for improving the conductivity of the nano-silver thin film according to claim 1, wherein the method comprises the following steps: when the nano Ag film is prepared by adopting the same parameters, the conductive threshold thickness of the nano Ag film on the substrate/oxide film is smaller than that of the nano Ag film on the substrate.
6. The method for improving the conductivity of the nano-silver thin film according to claim 1, wherein the method comprises the following steps: when the nanometer Ag film with the same thickness is prepared by adopting the same parameters, the sheet resistance of the substrate/oxide/Ag film is smaller than that of the substrate/Ag film.
7. A composite film based on a substrate/oxide/Ag thin film structure obtained by the method of any one of claims 1 to 6.
8. The composite film of claim 7, wherein: an oxide film can be arranged on the Ag film to form a substrate/oxide/Ag/oxide film structure.
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| CN202111287339.0A CN114005603A (en) | 2021-11-02 | 2021-11-02 | Method for improving conductivity of nano-silver film |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526480B1 (en) * | 1968-06-21 | 1977-02-22 | ||
| CN101697288A (en) * | 2009-10-13 | 2010-04-21 | 福建师范大学 | Transparent conductive film of metal silver/metal oxide and preparation method thereof |
| CN102219179A (en) * | 2010-04-19 | 2011-10-19 | 中国科学院理化技术研究所 | Silver doped titanium dioxide thin film and preparation method thereof |
| CN206595046U (en) * | 2017-04-06 | 2017-10-27 | 蚌埠玻璃工业设计研究院 | Nano silver wire transparent conductive film |
| CN206812540U (en) * | 2017-05-24 | 2017-12-29 | 合肥威迪变色玻璃有限公司 | A kind of compound transparent electricity conductive film |
| CN108456850A (en) * | 2018-03-07 | 2018-08-28 | 深圳大学 | A kind of Sandwich film and the preparation method and application thereof |
| CN109961874A (en) * | 2017-12-14 | 2019-07-02 | Tcl集团股份有限公司 | A kind of conductive film and preparation method thereof |
| CN112885503A (en) * | 2021-01-12 | 2021-06-01 | 南开大学 | Preparation method and application of ultrathin silver-based OMO (organic molybdenum oxide) composite transparent conductive film |
-
2021
- 2021-11-02 CN CN202111287339.0A patent/CN114005603A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526480B1 (en) * | 1968-06-21 | 1977-02-22 | ||
| CN101697288A (en) * | 2009-10-13 | 2010-04-21 | 福建师范大学 | Transparent conductive film of metal silver/metal oxide and preparation method thereof |
| CN102219179A (en) * | 2010-04-19 | 2011-10-19 | 中国科学院理化技术研究所 | Silver doped titanium dioxide thin film and preparation method thereof |
| CN206595046U (en) * | 2017-04-06 | 2017-10-27 | 蚌埠玻璃工业设计研究院 | Nano silver wire transparent conductive film |
| CN206812540U (en) * | 2017-05-24 | 2017-12-29 | 合肥威迪变色玻璃有限公司 | A kind of compound transparent electricity conductive film |
| CN109961874A (en) * | 2017-12-14 | 2019-07-02 | Tcl集团股份有限公司 | A kind of conductive film and preparation method thereof |
| CN108456850A (en) * | 2018-03-07 | 2018-08-28 | 深圳大学 | A kind of Sandwich film and the preparation method and application thereof |
| CN112885503A (en) * | 2021-01-12 | 2021-06-01 | 南开大学 | Preparation method and application of ultrathin silver-based OMO (organic molybdenum oxide) composite transparent conductive film |
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