CN114000121B - Strain diamond growth doping method based on MBE method and epitaxial structure - Google Patents

Strain diamond growth doping method based on MBE method and epitaxial structure Download PDF

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CN114000121B
CN114000121B CN202210003978.8A CN202210003978A CN114000121B CN 114000121 B CN114000121 B CN 114000121B CN 202210003978 A CN202210003978 A CN 202210003978A CN 114000121 B CN114000121 B CN 114000121B
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CN114000121A (en
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刘胜
沈威
吴改
梁康
郭宇铮
汪启军
王诗兆
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Wuhan University WHU
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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Abstract

The invention discloses a strained diamond growth doping method based on an MBE method and an epitaxial structure. Sequentially extending a gradual change buffer layer and a relaxation layer on the substrate layer by an MBE method, finally extending a strain diamond layer on the relaxation layer, and doping by the MBE method. In the growth and doping processes of the MBE strain diamond, the components of materials in the gradual change buffer layer and the relaxation layer can be accurately controlled, an atomic-level smooth surface is obtained, the lattice constant of the relaxation layer material is larger than that of the diamond material, the diamond is in a tensile strain state, and the doping efficiency of the diamond is further improved.

Description

Strain diamond growth doping method based on MBE method and epitaxial structure
Technical Field
The invention belongs to the technical field of diamond semiconductors, relates to a diamond doping technology, and particularly relates to a strained diamond growth doping method and an epitaxial structure based on an MBE (molecular beam epitaxy) method.
Background
Diamonds, also known as "diamonds", exist in nature and have emerged in human society by 4000 years ago as an indicator of wealth and esteem due to their beautiful and hard appearance. The modern diamond age originated in 1866 when it was discovered that diamond ore was extremely large in south africa, and later companies, including delbrus, uk, promoted diamond premium jewelry to consumers worldwide. However, diamond is suitable for basic materials in various electronic devices due to its unique inherent physical properties such as high hardness, wide bandgap, high thermal conductivity, and high electron mobility. However, natural diamond is expensive, so that it has little development in the scientific and industrial fields, and until 1955, the american general electric company realizes artificial synthesis of diamond by a high temperature and high pressure method for the first time, so that the artificial synthesis of diamond technology starts to be rapidly developed, and the price is gradually reduced; correspondingly, the application of the artificial diamond with the reduced cost in the fields of wide-bandgap semiconductors, ultraviolet photoelectric devices, electron-emitting devices, sensors and the like is also rapidly promoted. By doping with elements such as nitrogen or boron, diamond can have the properties of an n-type semiconductor and a p-type semiconductor, respectively. As a third generation semiconductor, diamond is also called a final semiconductor, but its n-type doping is still a worldwide problem.
Diamond p-type doping can be achieved by doping with boron elements. The problem of diamond n-type doping is not well solved yet. The commonly used n-type doping is phosphorus doping, but the van der waals radius of phosphorus atoms is larger than that of carbon atoms, the formation energy of doped diamond is larger, high doping rate is difficult to form, and the electrical performance of n-type diamond doping is limited.
The Molecular Beam Epitaxy (MBE) method is a method for growing single crystal materials. The molecular beam epitaxy chamber is an environment with high vacuum or ultra-high vacuum. The most important aspect of molecular beam epitaxy is the low growth rate, which enables precise control of the thickness, structure and composition of diamond and other materials. Compared with a microwave plasma vapor deposition method (MPCVD method), the temperature of molecular beam epitaxial growth is lower, so that the interface lattice mismatch effect caused by the heat effect and the diffusion influence of substrate impurities on the epitaxial layer are reduced.
Disclosure of Invention
Aiming at the doping problem of diamond, the invention provides a strain diamond growth doping method based on an MBE method and a strain doped diamond epitaxial structure obtained based on the method, so that the doping concentration and the electrical property of diamond are improved.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a strain diamond growth doping method based on an MBE method is characterized by comprising the following steps:
step 1: substrate layer preparation: fixing the substrate layer on an MBE sample rack, and heating the substrate layer;
step 2, MBE growth XaC1-aGradual buffer layer: generating epitaxial atomic beam containing X atomic beam and carbon atomic beam from beam source furnace, spraying onto substrate layer, and growing XaC1-aA graded buffer layer;
step 3, MBE growth XbC1-bRelaxed layer: generating epitaxial atomic beam containing X atomic beam and carbon atomic beam from beam source furnace, and spraying the epitaxial atomic beam onto XaC1-aGrowing X on the graded buffer layerbC1-bA relaxed layer;
and 4, step 4: MBE grows and dopes a strain diamond film layer: generating epitaxial atomic beam containing doped atomic beam and carbon atomic beam from beam source furnace, and spraying the epitaxial atomic beam onto XbC1-bRelaxing the layer, growing diamond and doping diamond to form the MBE strain doped diamond film layer;
wherein X is a lattice constant adjusting element, C is carbon, and a is XaC1-aWherein the ratio of the elements X, b is XbC1-bThe proportion of the medium X element; by adjusting the ratio of X tobC1-bThe lattice constant of the relaxation layer is larger than that of the MBE strain doped diamond film layer.
Further, in the direction perpendicular to the substrate layer, XaC1-aThe value of a in the graded buffer layer is gradually increased or reduced, namely, as the growth progresses, XaC1-aThe proportion of the X element in the gradual buffer layer changes in a gradient way.
The invention also provides a strain doped diamond epitaxial structure based on the MBE method, which is characterized in that: comprises the step of epitaxially growing X on a substrate layer sequentially from top to bottom in the vertical direction by an MBE methodaC1-aGraded buffer layer, XbC1-bThe device comprises a relaxation layer and an MBE strain doped diamond film layer, wherein an X element is a lattice constant adjusting element, and a C element is a carbon element; by adjusting the ratio of X tobC1-bThe lattice constant of the relaxation layer is larger than that of the MBE strain doped diamond film layerThe lattice constant of (2).
Preferably, the thickness of the substrate layer is 0.1 μm-10 mm;
preferably, X isaC1-aThe thickness of the gradual buffer layer is 0.001 mu m-10 mm;
preferably, X isbC1-bThe thickness of the relaxation layer is 0.001 μm-10 mm;
preferably, the thickness of the MBE strain doped diamond film layer is 0.001-10 mm;
and, XbC1-bThe thickness of the relaxation layer is larger than that of the MBE strain doped diamond film layer.
The principle of the invention is as follows:
said XbC1-bThe lattice constant of the single crystal material of the relaxation layer is larger than that of the diamond of the MBE strain doped diamond film layer when X isbC1-bWhen the single crystal material of the relaxation layer is matched with the lattice constant of the MBE strain diamond film, the MBE strain doped diamond film layer can be subjected to tensile stress, and then biaxial tensile strain is generated in the X direction and the Y direction, and atoms are stretched by the tensile stress during the growth of the diamond, so that doping elements can enter the diamond more favorably, and the doping concentration and the electrical property of the diamond are improved. .
Said XaC1-aThe thickness of the gradual buffer layer is larger than XbC1-bThickness of the relaxed layer, XbC1-bThe thickness of the relaxation layer is larger than that of the MBE strain doped diamond film layer so as to maintain the tensile strain state of the diamond layer and be more beneficial to the doped elements to enter the diamond.
A64-atom diamond model is constructed through simulation, and the forming energy of phosphorus doping under each strain condition is calculated based on a first principle. When the diamond is not strained, the phosphorus atom formation energy is 3.26 eV; when the diamond biaxial tensile strain is 4%, the phosphorus atom formation energy is 1.15 eV; when the diamond is biaxially tensile strained 8%. Thus, it was demonstrated that biaxial tensile strain is beneficial for reducing the dopant formation energy and further increasing the dopant concentration.
The invention has the advantages that:
in the growth and doping processes of the MBE strain diamond, the components of materials in the gradual change buffer layer and the relaxation layer can be accurately controlled, an atomic-level smooth surface is obtained, the lattice constant of the relaxation layer material is larger than that of the diamond material, the diamond is in a tensile strain state, and the doping efficiency of the diamond is further improved.
Drawings
Fig. 1 is a structural diagram of strained diamond growth and doping based on the MBE method.
Fig. 2 is a flow chart of strained diamond growth and doping based on MBE method.
Fig. 3 is a strain diagram of a strained diamond film.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
The invention is described in further detail below with reference to the following figures and specific examples:
as shown in figure 1, the invention provides a strain doped diamond epitaxial structure based on an MBE method, which comprises the step of sequentially epitaxially growing X on a substrate layer from top to bottom in the vertical direction by the MBE methodaC1-aGraded buffer layer, XbC1-bThe device comprises a relaxation layer and an MBE strain doped diamond film layer, wherein an X element is a lattice constant adjusting element, and a C element is a carbon element; by adjusting the ratio of X tobC1-bThe lattice constant of the relaxation layer is larger than that of the MBE strain doped diamond film layer. So as to maintain the tensile strain state of the diamond layer and be more beneficial to the doping elements entering the diamond.
Said XaC1-aGraded buffer layer, XbC1-bThe relaxation layer and the MBE strain doped diamond film layer are in a vacuum environment during epitaxial growth, and the pressure of a vacuum cavity is 10-3To 10-13Pa。
As a preferred embodiment, the epitaxial growth rate of each layer of material is 1 μm/h to 1 atomic layer/s.
As shown in fig. 1, the vertical thickness of the substrate layer material is between Z = Z4 and Z = Z3.
As shown in FIG. 1, XaC1-aThe vertical thickness of the graded buffer layer is between Z = Z3 and Z = Z2.
As shown in FIG. 1, XbC1-bThe vertical thickness of the relaxed layer is between Z = Z2 and Z = Z1.
As shown in fig. 1, the vertical thickness of the strained diamond layer is between Z = Z1 and Z = Z0.
The substrate layer is made of a silicon single crystal material, or a diamond single crystal material, or a silicon carbide single crystal material.
Said XaC1-aThe material of the gradual change buffer layer is XaC1-a。
Said XaC1-aThe X element accounts for a/1 ratio in the material, and the C element accounts for (1-a)/1.
Said XbC1-bThe material of the relaxation layer is XbC1-bA single crystal material.
Said XbC1-bThe X element accounts for b/1, and the C element accounts for (1-b)/1.
The above ratios are all molar ratios.
The material of the MBE strain doped diamond film layer is a diamond single crystal material.
The X is germanium element or silicon element, and the C is carbon element.
The numerical value of the a is as follows: a is more than or equal to 1 and more than or equal to 0.
The numerical value of the b is as follows: 1> b > 0.
When the substrate layer is a silicon single crystal material, the X element is a silicon element; when Z = Z3, a = 1; when Z = Z2, 1>a>0, and a = b; xaC1-aThe value of a gradually decreases as Z changes from Z3 to Z2 in the vertical direction of the graded buffer layer.
When the substrate layer is a diamond single crystal material, the X element is a silicon element or a germanium element; when Z = Z2, a = 0; when Z = Z1, 1 ≧ a>0, and a = b; xaC1-aIn the vertical direction of the graded buffer layer, Z is fromThe value of a gradually increases as Z2 changes to Z1.
When the substrate layer is a silicon carbide single crystal material, the X element is a silicon element; when Z = Z3, a = 0.5; when Z = Z2, 0.5>a>0, and a = b; xaC1-aThe value of a gradually decreases as Z changes from Z3 to Z2 in the vertical direction of the graded buffer layer.
Said XbC1-bThe relaxed layer, in the vertical direction, has a constant value of b.
Said XbC1-bThe lattice constant of the single crystal material of the relaxation layer (the size of the lattice constant is set as A1) is larger than the diamond lattice constant of the MBE strain doped diamond thin film layer (the size of the lattice constant is set as A2), and the two relations are as follows: a1>A2, and A1<（1+9%）×A2。
As a preferred embodiment, the thickness of the substrate layer is 0.1 μm to 10 mm.
As a preferred embodiment, said XaC1-aThe thickness of the gradual buffer layer is 0.001 mu m-10 mm.
As a preferred embodiment, said XbC1-bThe thickness of the relaxation layer is 0.001 μm to 10 mm.
As a preferred embodiment, the thickness of the MBE strain doped diamond film layer is 0.001 mu m-10 mm.
As shown in fig. 2, the introduced epitaxial atom beam is a silicon/germanium atom beam, a carbon atom beam, a doping atom beam, but is not limited thereto.
The doping atom beam is a phosphorus, oxygen, arsenic, sulfur atom beam, but is not limited thereto.
As a preferred embodiment, the mean free path of the atomic beam needs to be much larger than the distance from the source furnace exit to the substrate.
The doping gas is used for doping when growing the MBE strained diamond layer, and is mainly n-type doping, but is not limited thereto.
As shown in FIG. 3, XbC1-bThe lattice constant of the single crystal material of the relaxation layer is larger than that of the diamond of the MBE strain doped diamond film layer when X isbC1-bSingle crystal material of relaxation layer and crystal lattice of MBE strain diamond filmWhen the constants are matched, the MBE strain doped diamond film layer can be subjected to tensile stress, and then biaxial tensile strain is generated in the X direction and the Y direction.
Said XaC1-aThe thickness of the gradual buffer layer is larger than XbC1-bThickness of the relaxed layer, XbC1-bThe thickness of the relaxation layer is larger than that of the MBE strain doped diamond film layer so as to maintain the tensile strain state of the diamond layer.
A64-atom diamond model is constructed, and the forming energy of phosphorus doping under each strain condition is calculated based on the first principle. When the diamond is not strained, the phosphorus atom formation energy is 3.26 eV; when the diamond biaxial tensile strain is 4%, the phosphorus atom formation energy is 1.15 eV; when the diamond is biaxially tensile strained 8%. Thus, it was demonstrated that biaxial tensile strain is beneficial for reducing the dopant formation energy and further increasing the dopant concentration.
The invention also provides a strain diamond growth and doping method based on the MBE method, which comprises the following steps:
step 1: the substrate layer is ready for operation. And fixing the substrate layer on an MBE sample frame, and heating the substrate layer at the temperature of 100-2000 ℃ as a preferred embodiment.
Step 2: MBE growth XaC1-aA graded buffer layer. An epitaxial atomic beam containing X atomic beams and carbon atomic beams is generated from a beam source furnace and sprayed on the substrate layer. As a preferred embodiment, in the spraying process, the ratio of the flow rate of the X atom beam to the flow rate of the carbon atom beam is controlled to be about a: (1-a). As a preferred embodiment, the beam equivalent pressure of the X atom beam is 10-1~10-10Pa。
When X is germanium element (Ge), a beam of germanium atoms is ejected from the beam source furnace to produce GeaC1-aA graded buffer layer. When X is silicon element (Si), then silicon atom beam is ejected from the beam source furnace to prepare SiaC1-aA graded buffer layer.
As a preferred embodiment, X in step 2aC1-aThe epitaxial time of the gradual change buffer layer is more than or equal to 1 s.
And step 3: MBE growth XbC1-bAnd (4) relaxing the relaxed layer. Generating epitaxial atomic beam containing X atomic beam and carbon atomic beam from beam source furnace, and spraying the epitaxial atomic beam onto XaC1-aAnd the gradual buffer layer. Fixing the flux of the X atom beam so that XbC1-bThe X component of the relaxed layer remains constant in the vertical direction. When X is germanium element (Ge), a beam of germanium atoms is ejected from the beam source furnace to produce GebC1-bAnd (4) relaxing the relaxed layer. When X is silicon element (Si), then silicon atom beam is ejected from the beam source furnace to prepare SibC1-bAnd (4) relaxing the relaxed layer. As a preferred embodiment, in the spraying process, the ratio of the flow rate of the X atom beam to the flow rate of the carbon atom beam is controlled to be about b: (1-b). As a preferred embodiment, the beam equivalent pressure of the X atom beam is 10-1-10-10Pa。
As a preferred embodiment, X in step 3bC1-bThe epitaxial time of the relaxation layer is 1s or more.
And 4, step 4: MBE grows and dopes the strain diamond film layer. Generating epitaxial atomic beam containing doping atomic beam and carbon atomic beam from beam source furnace, and spraying to XbC1-bAnd (4) relaxing the relaxed layer. While growing diamond, diamond is doped. As a preferred embodiment, the beam equivalent pressure of the carbon atom beam is 10-1-10-10Pa, the beam equivalent pressure of the doped atom beam is 10-1-10- 10Pa。
As a preferred embodiment, the epitaxial time of the strained diamond thin film layer in step 4 is 1s or more.
The above embodiments are merely illustrative of the present invention and are not to be construed as limiting the invention. Although the present invention has been described in detail with reference to the embodiments, it should be understood by those skilled in the art that various combinations, modifications or equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and the technical solution of the present invention is covered by the claims of the present invention.

Claims (10)

1. A strain diamond growth doping method based on an MBE method is characterized by comprising the following steps:
step 1: substrate layer preparation: fixing the substrate layer on an MBE sample rack, and heating the substrate layer;
step 2, MBE growth XaC1-aGradual buffer layer: generating epitaxial atomic beam containing X atomic beam and carbon atomic beam from beam source furnace, spraying onto substrate layer, and growing XaC1-aA graded buffer layer;
step 3, MBE growth XbC1-bRelaxed layer: generating epitaxial atomic beam containing X atomic beam and carbon atomic beam from beam source furnace, and spraying the epitaxial atomic beam onto XaC1-aGrowing X on the graded buffer layerbC1-bA relaxed layer;
and 4, step 4: MBE grows and dopes a strain diamond film layer: generating epitaxial atomic beam containing doped atomic beam and carbon atomic beam from beam source furnace, and spraying the epitaxial atomic beam onto XbC1-bRelaxing the layer, growing diamond and doping diamond to form the MBE strain doped diamond film layer;
wherein X is a lattice constant adjusting element, C is carbon, and a is XaC1-aWherein the ratio of the elements X, b is XbC1-bThe proportion of the medium X element; by adjusting the ratio of X tobC1-bThe lattice constant of the relaxation layer is larger than that of the MBE strain doped diamond film layer.
2. The MBE process-based strained diamond growth doping method of claim 1, wherein: said XaC1-aGraded buffer layer, XbC1-bThe relaxation layer and the MBE strain doped diamond film layer are in a vacuum environment during epitaxial growth, and the pressure of a vacuum cavity is 10-3To 10-13Pa。
3. The MBE process-based strained diamond growth doping method of claim 1, wherein: the substrate layer is made of any one of a silicon single crystal material, a diamond single crystal material and a silicon carbide single crystal material.
4. The MBE process-based strained diamond growth doping method of claim 1, wherein: the X element is germanium or silicon.
5. The MBE process-based strained diamond growth doping method of claim 1, wherein: by adjusting the proportion of the X element, the X is enabled to beaC1-aThe lattice constant of the gradual buffer layer during initial growth is the same as or similar to that of the substrate, and the lattice constant is equal to that of X after the growth is finishedbC1-bThe relaxed layers are the same or similar.
6. The MBE method based strained diamond growth doping method of any one of claims 1 to 5, wherein: in the step 1, the heating temperature of the substrate is 100-2000 ℃.
7. The MBE method based strained diamond growth doping method of any one of claims 1 to 5, wherein: in the epitaxial growth from step 2 to step 4, the beam equivalent pressure of the X atom beam, the beam equivalent pressure of the carbon atom beam and the beam equivalent pressure of the doped atom beam are all 10-1-10-10Pa。
8. The MBE method based strained diamond growth doping method of any one of claims 1 to 5, wherein: in the step 4, the doped atomic beam is any one or more of phosphorus, oxygen, arsenic and sulfur.
9. The MBE method based strained diamond growth doping method of any one of claims 1 to 5, wherein: the thickness of the substrate layer is 0.1 mu m-10 mm;
said XaC1-aThe thickness of the gradual buffer layer is 0.001 mu m-10 mm;
said XbC1-bThe thickness of the relaxation layer is 0.001 μm-10 mm;
the thickness of the MBE strain doped diamond film layer is 0.001 mu m-10 mm;
and, XbC1-bThe thickness of the relaxation layer is larger than that of the MBE strain doped diamond film layer.
10. A strain doped diamond epitaxial structure based on an MBE method is characterized in that: comprises the step of epitaxially growing X on a substrate layer sequentially from top to bottom in the vertical direction by an MBE methodaC1-aGraded buffer layer, XbC1-bThe device comprises a relaxation layer and an MBE strain doped diamond film layer, wherein an X element is a lattice constant adjusting element, and a C element is a carbon element; by adjusting the ratio of X tobC1-bThe lattice constant of the relaxation layer is larger than that of the MBE strain doped diamond film layer.
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