CN113985951B - Semiconductor material vacuum multi-temperature-zone control method and system - Google Patents
Semiconductor material vacuum multi-temperature-zone control method and system Download PDFInfo
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- CN113985951B CN113985951B CN202111577106.4A CN202111577106A CN113985951B CN 113985951 B CN113985951 B CN 113985951B CN 202111577106 A CN202111577106 A CN 202111577106A CN 113985951 B CN113985951 B CN 113985951B
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Abstract
The invention relates to a semiconductor material vacuum multi-temperature-zone control method and a system, wherein the method comprises the steps of arranging a first refrigerating device and a second refrigerating device, the first refrigerating device is used for controlling the temperature of a first temperature zone, the second refrigerating device is used for controlling the temperature of a second temperature zone, arranging a first heat dissipation mechanism and a second heat dissipation mechanism, the first heat dissipation mechanism and the second heat dissipation mechanism are arranged side by side, the first heat dissipation mechanism is used for dissipating heat of the first refrigerating device, the second heat dissipation mechanism is used for dissipating heat of the second refrigerating device, and the working power of the first heat dissipation mechanism and the working power of the second heat dissipation mechanism are adjusted according to the temperature difference between a third storage position and a fourth storage position. The heat generated by the first refrigerating device and the second refrigerating device is dissipated through the first heat dissipation mechanism and the second heat dissipation mechanism, so that the heat dissipation efficiency of the first refrigerating device and the second refrigerating device is guaranteed, the temperature difference between the first temperature area and the second temperature area is guaranteed all the time, and the temperature of the first temperature area and the temperature of the second temperature area are prevented from being consistent.
Description
Technical Field
The invention relates to the technical field of industrial production, in particular to a method and a system for controlling a vacuum multi-temperature zone of a semiconductor material.
Background
Semiconductor materials are a class of electronic materials having semiconductor properties that can be used to fabricate semiconductor devices and integrated circuits. Semiconductor materials are commonly used for multi-temperature zone control, and temperature control of each temperature zone is realized in a refrigerator or a freezer.
However, since the temperature zones are separated by the thermal insulation board to reduce the heat transfer, the temperature of the zones is usually controlled by upper and lower zones, so that the temperature of the multi-temperature zone is effectively controlled.
However, the existing refrigerator or freezer has limitation on the temperature control and adjustment.
Disclosure of Invention
Therefore, the invention provides a method and a system for controlling a semiconductor material vacuum multi-temperature zone, which can solve the problem of limitation of the existing temperature control of the temperature zone.
In order to achieve the above object, the present invention provides a method for controlling a vacuum multiple temperature zone of a semiconductor material, comprising:
the method comprises the following steps that a first refrigerating device and a second refrigerating device are arranged, the first refrigerating device is used for controlling the temperature of a first temperature area, the second refrigerating device is used for controlling the temperature of a second temperature area, the first temperature area is used for storing a plurality of first storage substances, the second temperature area is used for storing a plurality of second storage substances, the first temperature area is arranged on the side face of the second temperature area, the temperature of the first temperature area is different from that of the second temperature area, the first temperature area is provided with a first storage bit, a second storage bit and a third storage bit, the second temperature area is provided with a fourth storage bit, a fifth storage bit and a sixth storage bit, the first storage bit, the second storage bit and the third storage bit are used for storing the first storage substances, and the fourth storage bit, the fifth storage bit and the sixth storage bit are used for storing the second storage substances;
the method comprises the following steps that a first heat dissipation mechanism and a second heat dissipation mechanism are arranged, the first heat dissipation mechanism and the second heat dissipation mechanism are arranged in parallel, the first heat dissipation mechanism is used for dissipating heat of a first refrigerating device, the second heat dissipation mechanism is used for dissipating heat of a second refrigerating device, and the first refrigerating device and the second refrigerating device can generate heat accumulation in the operation process, so that real-time temperature in a first temperature area and a second temperature area is influenced;
adjusting the working power of the first heat dissipation mechanism and the second heat dissipation mechanism according to the temperature difference between the third storage bit and the fourth storage bit; the first temperature zone is provided with a first temperature range, the temperatures of first storage substances stored in the first storage bit, the second storage bit and the third storage bit are all in the first temperature range T11-T12, wherein T11 represents a temperature minimum value of the first temperature range, T12 represents a temperature maximum value in the first temperature range, T11 is less than T12, all the storage bits of the first temperature zone are in the second temperature range T21-T22, T21 represents a temperature minimum value of the second temperature range, T22 represents a temperature maximum value in the second temperature range, T21 is less than T22, and the temperature of the first temperature zone is greater than that of the second temperature zone;
a standard temperature difference value delta T0 is preset, if the temperature difference delta T between the third storage bit and the fourth storage bit is = T3-T4, wherein T3 represents the temperature of the third storage bit, T4 represents the temperature of the fourth storage bit, and if the temperature difference delta T is smaller than or equal to the standard temperature difference value delta T0, the working power of the first heat dissipation mechanism is increased and the working power of the second heat dissipation mechanism is maintained, or the working power of the first heat dissipation mechanism is maintained and the working power of the second heat dissipation mechanism is reduced;
and if the temperature difference delta T is larger than the standard temperature difference delta T0, maintaining the working power of the first heat dissipation mechanism and the second heat dissipation mechanism.
Further, when the working power of the first heat dissipation mechanism is improved, a power adjustment coefficient k1 of the first heat dissipation mechanism is determined according to a temperature difference value between the actual temperature in the third storage bit and the lowest temperature value in the first temperature area and a temperature difference value between the actual temperature in the fourth storage bit and the highest temperature value in the second temperature area;
the first power adjustment coefficient k1= (T3-T11)/(T22-T4) of the first heat dissipation mechanism.
Further, when the working power of the second heat dissipation mechanism is reduced, a second power adjustment coefficient k2 of the second heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the highest temperature value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the lowest temperature value in the second temperature zone;
the power adjustment coefficient k2= (T12-T3)/(T4-T21) of the second heat dissipation mechanism.
Further, when the operating power of the first heat dissipation mechanism is adjusted by using the first power adjustment coefficient, the adjusted operating power of the first heat dissipation mechanism is P1' = P1 × (1 + k 1), where P1 is the standard operating power of the first heat dissipation mechanism.
Further, when the working power of the second heat dissipation mechanism is adjusted by using the second power adjustment coefficient, the adjusted working power of the second heat dissipation mechanism is P2' = P2 × |1-k1|, where P2 is the standard working power of the second heat dissipation mechanism.
Furthermore, the first heat dissipation mechanism and the third heat dissipation mechanism have the same structure, the first heat dissipation mechanism comprises a motor box, a main shaft, a connecting piece and fan blades, one side of the motor box is movably connected with the main shaft, and the main shaft and the motor box are linked through a shaft to form a rotating structure;
one side fixedly connected with connecting piece of main shaft, and the one end fixedly connected with flabellum of connecting piece, and flabellum evenly distributed is at the upper and lower both ends of connecting piece, first heat dissipation mechanism, second heat dissipation mechanism, first refrigerating plant, second refrigerating plant, first warm area, second warm area all set up in the protective housing.
Further, the bottom of the case of guard box still is provided with the support frame for support the guard box, there is the sealing door still through block post swing joint on the guard box, the sealing door sets up on the curb plate of guard box for seal the guard box, be provided with the mounting panel on the box of guard box, be provided with on the mounting panel the block post is used for the installation the sealing door, still be provided with on the sealing door and take the holding piece, open for the gripping the sealing door, the sealing door includes three main board of looking for the structure in the box is examined.
The invention also provides a semiconductor material vacuum multi-temperature zone control system applying the semiconductor material vacuum multi-temperature zone control method,
the temperature control system comprises a first refrigerating device, a second refrigerating device, a first heat dissipation mechanism and a second heat dissipation mechanism, wherein the first refrigerating device is used for controlling the temperature of a first temperature zone, the second refrigerating device is used for controlling the temperature of a second temperature zone, the first temperature zone is used for storing a plurality of first storage substances, the second temperature zone is used for storing a plurality of second storage substances, the first temperature zone is arranged on the side face of the second temperature zone, the temperature of the first temperature zone is different from that of the second temperature zone, the first temperature zone is provided with a first storage bit, a second storage bit and a third storage bit, the second temperature zone is provided with a fourth storage bit, a fifth storage bit and a sixth storage bit, the first storage substance is stored in the first storage bit, the second storage bit and the third storage bit, and the second storage bit is stored in the fourth storage bit, the fifth storage bit and the sixth storage bit; the first heat dissipation mechanism and the second heat dissipation mechanism are arranged side by side, the first heat dissipation mechanism is used for dissipating heat of the first refrigeration device, the second heat dissipation mechanism is used for dissipating heat of the second refrigeration device, and the first refrigeration device and the second refrigeration device can generate heat accumulation in the operation process, so that real-time temperature in the first temperature area and the second temperature area is influenced; adjusting the working power of the first heat dissipation mechanism and the second heat dissipation mechanism according to the temperature difference between the third storage bit and the fourth storage bit; the first temperature zone is provided with a first temperature range, the temperatures of first storage substances stored in the first storage bit, the second storage bit and the third storage bit are all in the first temperature range T11-T12, wherein T11 is less than T12, the storage bits of the first temperature zone are all in the second temperature range T21-T22, T21 is less than T22, and the temperature of the first temperature zone is higher than that of the second temperature zone;
a standard temperature difference value delta T0 is preset, if the temperature difference delta T between the third storage bit and the fourth storage bit is = T3-T4, wherein T3 represents the temperature of the third storage bit, T4 represents the temperature of the fourth storage bit, and if the temperature difference delta T is smaller than or equal to the standard temperature difference value delta T0, the working power of the first heat dissipation mechanism is increased and the working power of the second heat dissipation mechanism is maintained, or the working power of the first heat dissipation mechanism is maintained and the working power of the second heat dissipation mechanism is reduced;
and if the temperature difference delta T is larger than the standard temperature difference delta T0, maintaining the working power of the first heat dissipation mechanism and the second heat dissipation mechanism.
Further, when the working power of the first heat dissipation mechanism is improved, a power adjustment coefficient k1 of the first heat dissipation mechanism is determined according to a temperature difference value between the actual temperature in the third storage bit and the lowest temperature value in the first temperature area and a temperature difference value between the actual temperature in the fourth storage bit and the highest temperature value in the second temperature area;
a first power adjustment coefficient k1= (T3-T11)/(T22-T4) of the first heat dissipation mechanism; when the working power of the first heat dissipation mechanism is adjusted by using the first power adjustment coefficient, the adjusted working power of the first heat dissipation mechanism is P1' = P1 × (1 + k 1), wherein P1 is the standard working power of the first heat dissipation mechanism.
Further, when the working power of the second heat dissipation mechanism is reduced, a second power adjustment coefficient k2 of the second heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the highest temperature value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the lowest temperature value in the second temperature zone;
a power adjustment coefficient k2= (T12-T3)/(T4-T21) of the second heat dissipation mechanism; when the working power of the second heat dissipation mechanism is adjusted by using the second power adjustment coefficient, the adjusted working power of the second heat dissipation mechanism is P2' = P2 × |1-k1|, where P2 is the standard working power of the second heat dissipation mechanism.
Compared with the prior art, the invention has the advantages that the heat dissipation power of the first heat dissipation mechanism or the heat dissipation power of the second heat dissipation mechanism is determined through the relationship between the temperature difference of the third storage position and the fourth storage position and the preset standard temperature difference delta T0, in practical application, the first refrigeration device can effectively control the temperature of the first temperature zone in the working process, the second refrigeration device can control the temperature of the second temperature zone in the working process, but the first temperature zone and the second temperature zone are communicated and can generate heat exchange inevitably, so that the temperatures of the third storage position and the fourth storage position tend to be consistent, in the embodiment of the invention, in order to avoid the temperature of the first refrigeration device and the second refrigeration device tending to be consistent, the continuous working of the first refrigeration device and the second refrigeration device needs to be ensured, but the continuous working of the first refrigeration device and the second refrigeration device can generate more heat, the working efficiency of the first refrigerating device and the second refrigerating device is reduced, so that the heat generated by the first refrigerating device and the second refrigerating device is dissipated through the first heat dissipation mechanism and the second heat dissipation mechanism, the heat dissipation efficiency of the first refrigerating device and the second refrigerating device is ensured, the temperature difference between the first temperature zone and the second temperature zone is ensured to be always kept, and the temperature of the first temperature zone and the temperature of the second temperature zone are prevented from being consistent.
Particularly, the calculation method of the first power adjustment coefficient is specifically limited, so that the first power adjustment coefficient can meet the requirements of actual storage positions and threshold values of the temperature zone, the power adjustment of the first heat dissipation mechanism can better meet the actual requirements, the efficiency of the power adjustment is greatly improved, the accurate adjustment of the power of the first heat dissipation mechanism is realized, and the accuracy of temperature control of the temperature zone is improved.
Particularly, the calculation method of the second power adjustment coefficient is specifically limited, so that the second power adjustment coefficient can meet the requirements of actual storage positions and threshold values of the temperature zone, the power adjustment of the second heat dissipation mechanism can better meet the actual requirements, the efficiency of the power adjustment is greatly improved, the accurate adjustment of the power of the second heat dissipation mechanism is realized, and the accuracy of temperature control of the temperature zone is improved.
Particularly, the product of the adjustment coefficient and the power is increased on the basis of the rated power, so that the power of the first heat dissipation mechanism is adjusted more accurately, the stable output of the working power is ensured, the first heat dissipation mechanism is prevented from being damaged by overlarge power adjustment, and the service life of the first heat dissipation mechanism is prolonged.
Particularly, the spindle and the motor box are linked through the shaft to form a rotating structure, so that the inside of the motor box is protected, the damage is reduced, the spindle drives the connecting piece and the fan blades to rotate, and the air flowing speed inside is accelerated.
Drawings
Fig. 1 is a schematic flow chart of a method for controlling a vacuum multi-temperature-zone of a semiconductor material according to an embodiment of the present invention;
FIG. 2 is a schematic front view of a full-section structure of a semiconductor material vacuum multi-temperature-zone control system according to an embodiment of the present invention;
FIG. 3 is a schematic front view of a control system for a vacuum multi-temperature zone of a semiconductor material according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a sealing mechanism in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a heat dissipation mechanism according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a protection refrigeration device in an embodiment of the invention.
Detailed Description
In order that the objects and advantages of the invention will be more clearly understood, the invention is further described below with reference to examples; it should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention, and do not limit the scope of the present invention.
It should be noted that in the description of the present invention, the terms of direction or positional relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, which are only for convenience of description, and do not indicate or imply that the device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, it should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Referring to fig. 1, a method for controlling a vacuum multi-temperature zone of a semiconductor material according to an embodiment of the present invention includes:
step S100: the method comprises the following steps that a first refrigerating device and a second refrigerating device are arranged, the first refrigerating device is used for controlling the temperature of a first temperature area, the second refrigerating device is used for controlling the temperature of a second temperature area, the first temperature area is used for storing a plurality of first storage substances, the second temperature area is used for storing a plurality of second storage substances, the first temperature area is arranged on the side face of the second temperature area, the temperature of the first temperature area is different from that of the second temperature area, the first temperature area is provided with a first storage bit, a second storage bit and a third storage bit, the second temperature area is provided with a fourth storage bit, a fifth storage bit and a sixth storage bit, the first storage bit, the second storage bit and the third storage bit are used for storing the first storage substances, and the fourth storage bit, the fifth storage bit and the sixth storage bit are used for storing the second storage substances;
step S200: the method comprises the following steps that a first heat dissipation mechanism and a second heat dissipation mechanism are arranged, the first heat dissipation mechanism and the second heat dissipation mechanism are arranged in parallel, the first heat dissipation mechanism is used for dissipating heat of a first refrigerating device, the second heat dissipation mechanism is used for dissipating heat of a second refrigerating device, and the first refrigerating device and the second refrigerating device can generate heat accumulation in the operation process, so that real-time temperature in a first temperature area and a second temperature area is influenced;
step S300: adjusting the working power of the first heat dissipation mechanism and the second heat dissipation mechanism according to the temperature difference between the third storage bit and the fourth storage bit; the first temperature zone is provided with a first temperature range, the temperatures of first storage substances stored in the first storage bit, the second storage bit and the third storage bit are all in the first temperature range T11-T12, wherein T11 represents a temperature minimum value of the first temperature range, T12 represents a temperature maximum value in the first temperature range, T11 is less than T12, all the storage bits of the first temperature zone are in the second temperature range T21-T22, T21 represents a temperature minimum value of the second temperature range, T22 represents a temperature maximum value in the second temperature range, T21 is less than T22, and the temperature of the first temperature zone is greater than that of the second temperature zone;
a standard temperature difference value delta T0 is preset, if the temperature difference delta T between the third storage bit and the fourth storage bit is = T3-T4, wherein T3 represents the temperature of the third storage bit, T4 represents the temperature of the fourth storage bit, and if the temperature difference delta T is smaller than or equal to the standard temperature difference value delta T0, the working power of the first heat dissipation mechanism is increased and the working power of the second heat dissipation mechanism is maintained, or the working power of the first heat dissipation mechanism is maintained and the working power of the second heat dissipation mechanism is reduced;
and if the temperature difference delta T is larger than the standard temperature difference delta T0, maintaining the working power of the first heat dissipation mechanism and the second heat dissipation mechanism.
Specifically, in the embodiment of the invention, the heat dissipation power of the first heat dissipation mechanism or the heat dissipation power of the second heat dissipation mechanism is determined through the relationship between the temperature difference between the third storage location and the fourth storage location and the preset standard temperature difference value Δ T0, in practical application, the first refrigeration device can effectively control the temperature of the first temperature zone in the working process, the second refrigeration device can control the temperature of the second temperature zone in the working process, but the first temperature zone and the second temperature zone are communicated and inevitably generate heat exchange, so that the temperatures of the third storage location and the fourth storage location tend to be consistent, in order to avoid the temperature of the first refrigeration device and the temperature of the second refrigeration device tending to be consistent, the continuous working of the first refrigeration device and the second refrigeration device needs to be ensured, but the continuous working of the first refrigeration device and the second refrigeration device can generate more heat, the working efficiency of the first refrigerating device and the second refrigerating device is reduced, so that the heat generated by the first refrigerating device and the second refrigerating device is dissipated through the first heat dissipation mechanism and the second heat dissipation mechanism, the heat dissipation efficiency of the first refrigerating device and the second refrigerating device is ensured, the temperature difference between the first temperature zone and the second temperature zone is ensured to be always kept, and the temperature of the first temperature zone and the temperature of the second temperature zone are prevented from being consistent.
Specifically, when the working power of the first heat dissipation mechanism is increased, the power adjustment coefficient k1 of the first heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the lowest temperature value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the highest temperature value in the second temperature zone;
the first power adjustment coefficient k1= (T3-T11)/(T22-T4) of the first heat dissipation mechanism.
Specifically, the method for calculating the first power adjustment coefficient is specifically limited, so that the first power adjustment coefficient can meet the requirements of actual storage locations and thresholds of the temperature zone, the power adjustment of the first heat dissipation mechanism can better meet the actual requirements, the efficiency of the power adjustment is greatly improved, the accurate adjustment of the power of the first heat dissipation mechanism is realized, and the accuracy of temperature control of the temperature zone is improved.
Specifically, when the working power of the second heat dissipation mechanism is reduced, a second power adjustment coefficient k2 of the second heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the highest temperature value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the lowest temperature value in the second temperature zone;
the power adjustment coefficient k2= (T12-T3)/(T4-T21) of the second heat dissipation mechanism.
Specifically, the embodiment of the invention specifically limits the calculation method of the second power adjustment coefficient, so that the second power adjustment coefficient can meet the requirements of actual storage locations and threshold values of the temperature zone, the power adjustment of the second heat dissipation mechanism can better meet the actual requirements, the efficiency of the power adjustment is greatly improved, the accurate adjustment of the power of the second heat dissipation mechanism is realized, and the accuracy of temperature control of the temperature zone is improved.
Specifically, when the operating power of the first heat dissipation mechanism is adjusted by using the first power adjustment coefficient, the adjusted operating power of the first heat dissipation mechanism is P1' = P1 × (1 + k 1), where P1 is the standard operating power of the first heat dissipation mechanism.
Specifically, the product of the adjustment coefficient and the power is increased on the basis of the rated power, so that the power adjustment of the first heat dissipation mechanism is more accurate, the stable output of the working power is ensured, the damage to the first heat dissipation mechanism caused by overlarge power adjustment is prevented, and the service life of the first heat dissipation mechanism is prolonged.
Specifically, when the operating power of the second heat dissipation mechanism is adjusted by using the second power adjustment coefficient, the adjusted operating power of the second heat dissipation mechanism is P2' = P2 × |1-k1|, where P2 is the standard operating power of the second heat dissipation mechanism.
Specifically, the embodiment of the invention reduces the product of the adjustment coefficient and the power on the basis of the rated power, so that the power adjustment of the second heat dissipation mechanism is more accurate, the stable output of the working power is ensured, the damage to the second heat dissipation mechanism caused by overlarge power adjustment is prevented, and the service life of the second heat dissipation mechanism is prolonged.
Specifically, the first heat dissipation mechanism and the third heat dissipation mechanism have the same structure, the first heat dissipation mechanism comprises a motor box, a main shaft, a connecting piece and fan blades, one side of the motor box is movably connected with the main shaft, and the main shaft and the motor box are linked through a shaft to form a rotating structure;
one side fixedly connected with connecting piece of main shaft, and the one end fixedly connected with flabellum of connecting piece, and flabellum evenly distributed is at the upper and lower both ends of connecting piece, first heat dissipation mechanism, second heat dissipation mechanism, first refrigerating plant, second refrigerating plant, first warm area, second warm area all set up in the protective housing.
Specifically, the rotating structure is formed by the spindle and the motor box through shaft linkage, so that the interior of the motor box is protected, the damage is reduced, the spindle drives the connecting piece and the fan blades to rotate, and the air flowing speed in the interior is increased.
Particularly, the bottom of the case of guard box still is provided with the support frame for support the guard box, there is the sealing door still through block post swing joint on the guard box, the sealing door sets up on the curb plate of guard box for seal the guard box, be provided with the mounting panel on the box of guard box, be provided with on the mounting panel the block post is used for the installation the sealing door, still be provided with on the sealing door and hold the piece, open for the gripping the sealing door, the sealing door includes three main board of looking for the structure in the box is examined.
Particularly, the mounting plate is used for butt joint and fixation, the connection with the box body is firmer, butt joint is carried out through the clamping column for use, the sealing mechanism is matched to facilitate connection and installation of equipment, the rotating shaft is used for connection, the main visual board is convenient to connect and open for use, the holding block is fixedly connected with the main visual board and coincides with the horizontal central line of the main visual board, an operator can conveniently hold, pull and open for use, the overall operation rapidness of the equipment is improved, the supporting frame is connected with the box body through welding, the operator can conveniently move the equipment, the bottom of the supporting frame is placed, and the stability of the equipment is improved.
The embodiment of the invention also provides a semiconductor material vacuum multi-temperature-zone control system, which comprises: the temperature control system comprises a first refrigerating device, a second refrigerating device, a first heat dissipation mechanism and a second heat dissipation mechanism, wherein the first refrigerating device is used for controlling the temperature of a first temperature zone, the second refrigerating device is used for controlling the temperature of a second temperature zone, the first temperature zone is used for storing a plurality of first storage substances, the second temperature zone is used for storing a plurality of second storage substances, the first temperature zone is arranged on the side face of the second temperature zone, the temperature of the first temperature zone is different from that of the second temperature zone, the first temperature zone is provided with a first storage bit, a second storage bit and a third storage bit, the second temperature zone is provided with a fourth storage bit, a fifth storage bit and a sixth storage bit, the first storage substance is stored in the first storage bit, the second storage bit and the third storage bit, and the second storage bit is stored in the fourth storage bit, the fifth storage bit and the sixth storage bit; the first heat dissipation mechanism and the second heat dissipation mechanism are arranged side by side, the first heat dissipation mechanism is used for dissipating heat of the first refrigeration device, the second heat dissipation mechanism is used for dissipating heat of the second refrigeration device, and the first refrigeration device and the second refrigeration device can generate heat accumulation in the operation process, so that real-time temperature in the first temperature area and the second temperature area is influenced; adjusting the working power of the first heat dissipation mechanism and the second heat dissipation mechanism according to the temperature difference between the third storage bit and the fourth storage bit; the first temperature zone is provided with a first temperature range, the temperatures of first storage substances stored in the first storage bit, the second storage bit and the third storage bit are all in the first temperature range T11-T12, wherein T11 represents a temperature minimum value of the first temperature range, T12 represents a temperature maximum value in the first temperature range, T11 is less than T12, all the storage bits of the first temperature zone are in the second temperature range T21-T22, T21 represents a temperature minimum value of the second temperature range, T22 represents a temperature maximum value in the second temperature range, T21 is less than T22, and the temperature of the first temperature zone is greater than that of the second temperature zone;
a standard temperature difference value delta T0 is preset, if the temperature difference delta T between the third storage bit and the fourth storage bit is = T3-T4, wherein T3 represents the temperature of the third storage bit, T4 represents the temperature of the fourth storage bit, and if the temperature difference delta T is smaller than or equal to the standard temperature difference value delta T0, the working power of the first heat dissipation mechanism is increased and the working power of the second heat dissipation mechanism is maintained, or the working power of the first heat dissipation mechanism is maintained and the working power of the second heat dissipation mechanism is reduced;
and if the temperature difference delta T is larger than the standard temperature difference delta T0, maintaining the working power of the first heat dissipation mechanism and the second heat dissipation mechanism.
Specifically, when the working power of the first heat dissipation mechanism is increased, the power adjustment coefficient k1 of the first heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the lowest temperature value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the highest temperature value in the second temperature zone;
a first power adjustment coefficient k1= (T3-T11)/(T22-T4) of the first heat dissipation mechanism; when the working power of the first heat dissipation mechanism is adjusted by using the first power adjustment coefficient, the adjusted working power of the first heat dissipation mechanism is P1' = P1 × (1 + k 1), wherein P1 is the standard working power of the first heat dissipation mechanism.
Specifically, when the working power of the second heat dissipation mechanism is reduced, a second power adjustment coefficient k2 of the second heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the highest temperature value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the lowest temperature value in the second temperature zone;
a power adjustment coefficient k2= (T12-T3)/(T4-T21) of the second heat dissipation mechanism; when the working power of the second heat dissipation mechanism is adjusted by using the second power adjustment coefficient, the adjusted working power of the second heat dissipation mechanism is P2' = P2 × |1-k1|, where P2 is the standard working power of the second heat dissipation mechanism.
The semiconductor material vacuum multi-temperature-zone control system in the embodiment of the invention applies the semiconductor material vacuum multi-temperature control method, comprises the same or corresponding technical characteristics, can achieve the same technical effect, and is not repeated herein.
Specifically, as shown in fig. 2 to 6, a semiconductor material vacuum multi-temperature-zone control system includes a box 1, a housing 6 is fixedly connected to an inner wall of the box 1, a placing block 7 is disposed below the inner wall of the housing 6, a heat dissipation mechanism 8 is disposed above the placing block 7, a protective refrigeration device 9 is disposed on a top of the heat dissipation mechanism 8, the protective refrigeration device 9 includes a frame 901, a cover 902 and a connector 903, the cover 902 is made of a refrigeration semiconductor material, and central axes of the box 1 and the housing 6 are overlapped. Casing 6 with place piece 7 and be connected through the welding, closely laminate between the below surface of placing the top surface of piece 7 and heat dissipation mechanism 8, protection refrigerating plant 9 is located heat dissipation mechanism 8's top, closely laminate between the below surface of frame 901 inner wall surface and cover 902, constitute detachable construction between cover 902 and connector link 903 and the frame 901.
In the embodiment, the front surface of the box body 1 is fixedly connected with the mounting plate 2, and the mounting plate 2 is connected with the box body 1 through welding; during operation, the installation plate 2 and the box body 1 are in butt joint and fixed, so that the components are connected more firmly. The inner side of the mounting plate 2 is provided with a clamping column 3, one end of the clamping column 3 is movably connected with a sealing mechanism 4, and a rotating structure is formed between the clamping column 3 and the sealing mechanism 4; during operation, an operator can conveniently butt joint, clamp and fix the sealing mechanism 4 through the clamping column 3, and the clamping column 3 is used for connection and rotation.
In this embodiment, the sealing mechanism 4 includes a main viewing plate 401, a rotating shaft 402 and a holding block 403, wherein the rotating shaft 402 is disposed on one side of the main viewing plate 401, and the main viewing plate 401 is fixedly connected to one side of the rotating shaft 402; during operation, the pivot 402 that connects through main board 401 is connected and is opened, and the block post 3 through connecting the block carries out rotation assistance, conveniently carries out opening of main board 401 and uses. A holding block 403 is fixedly connected to the main viewing plate 401, and the holding block 403 coincides with the horizontal center line of the main viewing plate 401; during operation, an operator can hold the holding block 403 conveniently to pull and open, and the operation and use rapidness of the whole equipment are improved.
In the embodiment, a support frame 5 is arranged below the box body 1, and the support frame 5 is connected with the box body 1 through welding; during operation, the bottom of the supporting frame 5 is placed and supported, so that the equipment is more stable when being placed and fixed. The heat dissipation mechanism 8 comprises a motor case 801, a main shaft 802, a connecting piece 803 and fan blades 804, wherein the main shaft 802 is movably connected to one side of the motor case 801, and the main shaft 802 and the motor case 801 are linked through a shaft to form a rotating structure; first warm area is used for depositing a plurality of first storage material, the second warm area is used for depositing a plurality of second storage material, and first warm area sets up in the side of second warm area, and the temperature of first warm area is different with the temperature of second warm area, first warm area is provided with first storage bit, second storage bit and third storage bit, the second warm area is provided with fourth storage bit, fifth storage bit and sixth storage bit, deposit first storage material in first storage bit 11, second storage bit 12 and the third storage bit 13, and fourth storage bit 14, fifth storage bit 15 and sixth storage bit 16 are deposit the second material during operation, carry out the protection of inside motor through motor case 801 and use, reduce inside destructiveness, make things convenient for the connection of main shaft 802 to use simultaneously. In this embodiment, one side of the main shaft 802 is fixedly connected with a connecting member 803, and one end of the connecting member 803 is fixedly connected with fan blades 804, and the fan blades 804 are uniformly distributed at the upper and lower ends of the connecting member 803; during operation, the main shaft 802 is connected and rotated to drive the connecting piece 803 and the fan blade 804 to rotate and open for use, so that the fan blade 804 can run more stably.
So far, the technical solutions of the present invention have been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of the present invention is obviously not limited to these specific embodiments. Equivalent changes or substitutions of related technical features can be made by those skilled in the art without departing from the principle of the invention, and the technical scheme after the changes or substitutions can fall into the protection scope of the invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention; various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A method for controlling a semiconductor material vacuum multi-temperature zone is characterized by comprising the following steps:
the method comprises the steps that a first refrigerating device and a second refrigerating device are arranged, the first refrigerating device is used for controlling the temperature of a first temperature area, the second refrigerating device is used for controlling the temperature of a second temperature area, the first temperature area is used for storing a plurality of first storage substances, the second temperature area is used for storing a plurality of second storage substances, the first temperature area is arranged on the side face of the second temperature area, the temperature of the first temperature area is different from that of the second temperature area, the first temperature area is provided with a first storage bit, a second storage bit and a third storage bit, the second temperature area is provided with a fourth storage bit, a fifth storage bit and a sixth storage bit, the first storage bit, the second storage bit and the third storage bit are used for storing the first storage substances, and the fourth storage bit, the fifth storage bit and the sixth storage bit are used for storing the second storage substances;
the method comprises the following steps that a first heat dissipation mechanism and a second heat dissipation mechanism are arranged, the first heat dissipation mechanism and the second heat dissipation mechanism are arranged in parallel, the first heat dissipation mechanism is used for dissipating heat of a first refrigerating device, the second heat dissipation mechanism is used for dissipating heat of a second refrigerating device, and the first refrigerating device and the second refrigerating device can generate heat accumulation in the operation process, so that real-time temperature in a first temperature area and a second temperature area is influenced;
adjusting the working power of the first heat dissipation mechanism and the second heat dissipation mechanism according to the temperature difference between the third storage bit and the fourth storage bit; the first temperature zone is provided with a first temperature range, the temperatures of first storage substances stored in the first storage bit, the second storage bit and the third storage bit are all in the first temperature range T11-T12, wherein T11 represents a temperature minimum value of the first temperature range, T12 represents a temperature maximum value in the first temperature range, T11 is less than T12, all the storage bits of the second temperature zone are in the second temperature range T21-T22, T21 represents a temperature minimum value of the second temperature range, T22 represents a temperature maximum value in the second temperature range, T21 is less than T22, and the temperature of the first temperature zone is greater than that of the second temperature zone;
a standard temperature difference value delta T0 is preset, if the temperature difference delta T between the third storage bit and the fourth storage bit is = T3-T4, wherein T3 represents the temperature of the third storage bit, T4 represents the temperature of the fourth storage bit, and if the temperature difference delta T is smaller than or equal to the standard temperature difference value delta T0, the working power of the first heat dissipation mechanism is increased and the working power of the second heat dissipation mechanism is maintained, or the working power of the first heat dissipation mechanism is maintained and the working power of the second heat dissipation mechanism is reduced;
and if the temperature difference delta T is larger than the standard temperature difference delta T0, maintaining the working power of the first heat dissipation mechanism and the second heat dissipation mechanism.
2. The method for controlling a vacuum multi-temperature zone of a semiconductor material according to claim 1,
when the working power of the first heat dissipation mechanism is improved, a first power adjustment coefficient k1 of the first heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the temperature minimum value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the temperature maximum value in the second temperature zone;
the first power adjustment coefficient k1= (T3-T11)/(T22-T4) of the first heat dissipation mechanism.
3. The method for controlling a vacuum multi-temperature zone of a semiconductor material according to claim 2,
when the working power of the second heat dissipation mechanism is reduced, determining a second power adjustment coefficient k2 of the second heat dissipation mechanism according to the temperature difference between the actual temperature in the third storage bit and the temperature maximum value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the temperature minimum value in the second temperature zone;
a second power adjustment coefficient k2= (T12-T3)/(T4-T21) of the second heat dissipation mechanism.
4. The method as claimed in claim 3, wherein when the operating power of the first heat dissipation mechanism is adjusted by the first power adjustment factor, the operating power of the first heat dissipation mechanism after adjustment is P1' = P1 × (1 + k 1), where P1 is the standard operating power of the first heat dissipation mechanism.
5. The method for controlling the vacuum multi-temperature-zone of semiconductor material according to claim 4, wherein when the second power adjustment coefficient is used to adjust the operating power of the second heat dissipation mechanism, the adjusted operating power of the second heat dissipation mechanism is P2' = P2 x 1-k1, wherein P2 is the standard operating power of the second heat dissipation mechanism.
6. The method for controlling the vacuum multi-temperature-zone of the semiconductor material according to claim 5, wherein the first heat dissipation mechanism and the second heat dissipation mechanism have the same structure, the first heat dissipation mechanism comprises a motor box, a main shaft, a connecting piece and fan blades, one side of the motor box is movably connected with the main shaft, and the main shaft and the motor box are linked through a shaft to form a rotating structure;
one side fixedly connected with connecting piece of main shaft, and the one end fixedly connected with flabellum of connecting piece, and flabellum evenly distributed is at the upper and lower both ends of connecting piece, first heat dissipation mechanism, second heat dissipation mechanism, first refrigerating plant, second refrigerating plant, first warm area, second warm area all set up in the protective housing.
7. The semiconductor material vacuum multi-temperature-zone control method as claimed in claim 6, wherein a support frame is further arranged at the bottom of the protection box for supporting the protection box, a sealing door is further movably connected to the protection box through a clamping column, the sealing door is arranged on a side plate of the protection box for sealing the protection box, a mounting plate is arranged on a box body of the protection box, the clamping column is arranged on the mounting plate for mounting the sealing door, a holding block is further arranged on the sealing door for grasping and opening the sealing door, and the sealing door comprises three main viewing plates for checking a structure in the box body.
8. A semiconductor material vacuum multi-temperature zone control system to which the semiconductor material vacuum multi-temperature zone control method according to any one of claims 1 to 7 is applied,
the temperature control system comprises a first refrigerating device, a second refrigerating device, a first heat dissipation mechanism and a second heat dissipation mechanism, wherein the first refrigerating device is used for controlling the temperature of a first temperature zone, the second refrigerating device is used for controlling the temperature of a second temperature zone, the first temperature zone is used for storing a plurality of first storage substances, the second temperature zone is used for storing a plurality of second storage substances, the first temperature zone is arranged on the side face of the second temperature zone, the temperature of the first temperature zone is different from that of the second temperature zone, the first temperature zone is provided with a first storage bit, a second storage bit and a third storage bit, the second temperature zone is provided with a fourth storage bit, a fifth storage bit and a sixth storage bit, the first storage substance is stored in the first storage bit, the second storage bit and the third storage bit, and the second storage bit is stored in the fourth storage bit, the fifth storage bit and the sixth storage bit; the first heat dissipation mechanism and the second heat dissipation mechanism are arranged side by side, the first heat dissipation mechanism is used for dissipating heat of the first refrigeration device, the second heat dissipation mechanism is used for dissipating heat of the second refrigeration device, and the first refrigeration device and the second refrigeration device can generate heat accumulation in the operation process, so that real-time temperature in the first temperature area and the second temperature area is influenced; adjusting the working power of the first heat dissipation mechanism and the second heat dissipation mechanism according to the temperature difference between the third storage bit and the fourth storage bit; the first temperature zone is provided with a first temperature range, the temperatures of first storage substances stored in the first storage bit, the second storage bit and the third storage bit are all in the first temperature range T11-T12, wherein T11 represents a temperature minimum value of the first temperature range, T12 represents a temperature maximum value in the first temperature range, T11 is less than T12, all the storage bits of the second temperature zone are in the second temperature range T21-T22, T21 represents a temperature minimum value of the second temperature range, T22 represents a temperature maximum value in the second temperature range, T21 is less than T22, and the temperature of the first temperature zone is greater than that of the second temperature zone;
a standard temperature difference value delta T0 is preset, if the temperature difference delta T between the third storage bit and the fourth storage bit is = T3-T4, wherein T3 represents the temperature of the third storage bit, T4 represents the temperature of the fourth storage bit, and if the temperature difference delta T is smaller than or equal to the standard temperature difference value delta T0, the working power of the first heat dissipation mechanism is increased and the working power of the second heat dissipation mechanism is maintained, or the working power of the first heat dissipation mechanism is maintained and the working power of the second heat dissipation mechanism is reduced;
and if the temperature difference delta T is larger than the standard temperature difference delta T0, maintaining the working power of the first heat dissipation mechanism and the second heat dissipation mechanism.
9. The semiconductor material vacuum multi-temperature-zone control system of claim 8,
when the working power of the first heat dissipation mechanism is improved, a first power adjustment coefficient k1 of the first heat dissipation mechanism is determined according to the temperature difference between the actual temperature in the third storage bit and the temperature minimum value in the first temperature zone and the temperature difference between the actual temperature in the fourth storage bit and the temperature maximum value in the second temperature zone;
a first power adjustment coefficient k1= (T3-T11)/(T22-T4) of the first heat dissipation mechanism; when the working power of the first heat dissipation mechanism is adjusted by using the first power adjustment coefficient, the adjusted working power of the first heat dissipation mechanism is P1' = P1 × (1 + k 1), wherein P1 is the standard working power of the first heat dissipation mechanism.
10. The semiconductor material vacuum multi-temperature-zone control system according to claim 9, wherein when the operating power of the second heat dissipation mechanism is reduced, the second power adjustment coefficient k2 of the second heat dissipation mechanism is determined according to a temperature difference between the actual temperature in the third storage bit and the maximum temperature value in the first temperature zone and a temperature difference between the actual temperature in the fourth storage bit and the minimum temperature value in the second temperature zone;
a second power adjustment coefficient k2= (T12-T3)/(T4-T21) of the second heat dissipation mechanism; when the working power of the second heat dissipation mechanism is adjusted by using the second power adjustment coefficient, the adjusted working power of the second heat dissipation mechanism is P2' = P2 × |1-k1|, where P2 is the standard working power of the second heat dissipation mechanism.
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| JP2736160B2 (en) * | 1990-09-26 | 1998-04-02 | 株式会社東芝 | Refrigerator temperature controller |
| EP0715136B1 (en) * | 1994-11-30 | 2001-12-19 | Samsung Electronics Co., Ltd. | Method for controlling a refrigerator temperature by controlling cool air discharge direction |
| KR100268502B1 (en) * | 1998-07-30 | 2000-10-16 | 윤종용 | Uniform cooling apparatus for refrigerator and control method thereof |
| CN101413747B (en) * | 2007-10-19 | 2012-07-25 | 苏州三星电子有限公司 | Improved refrigerator with temperature-variable room |
| CN201787789U (en) * | 2010-08-21 | 2011-04-06 | 徐州市精英电器技术有限公司 | Freezing temperature and refrigerating temperature digital display controller |
| CN109606062A (en) * | 2018-12-20 | 2019-04-12 | 浙江合众新能源汽车有限公司 | A kind of energy-efficient dual temperature area automatic air condition and its working method |
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