CN113985522A - Micro-ring optical switch based on silicon-silicon nitride three-dimensional integration - Google Patents
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B2006/12038—Glass (SiO2 based materials)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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Abstract
A micro-ring optical switch based on silicon-silicon nitride three-dimensional integration is formed by forming a three-dimensional waveguide cross junction by horizontally arranged silicon waveguides and longitudinally arranged top silicon nitride waveguides, and is formed by vertically coupling with a silicon nitride waveguide cascade micro-ring in a middle layer. And the interlayer coupler is utilized to realize interlayer coupling between the silicon nitride waveguide in the middle layer and other two layers of waveguides and assist the optical signal to be converted between the three layers of waveguides. The invention utilizes the doping of the bottom silicon waveguide to form the micro heater, adjusts the resonance wavelength of the middle silicon nitride micro ring by electrifying two ends of the doped waveguide to generate heat, switches the path of the optical signal and has the advantage of low power consumption. When the wavelength of the optical signal matches the resonant wavelength of the microring, two optical signals in opposite directions can be routed simultaneously in the device. The optical switch structure of the invention has large processing tolerance, does not need extra power consumption to compensate the working wavelength offset, is not sensitive to temperature and does not need a complex control circuit.
Description
Technical Field
The invention relates to the technical field of optical switches, in particular to a micro-ring optical switch based on silicon-silicon nitride three-dimensional integration.
Background
The advent of the big data era has promoted the rapid development of high-speed data transmission in the fields of long-distance optical communication links, short-distance data centers, high-performance computing systems, even inter-chip and intra-chip optical interconnections, and the like. With the increase of data rate in a data center cluster switch, the existing electrical switching system faces various challenges such as power consumption and delay, and relies on high-capacity optical interconnection to realize communication connection among a plurality of servers, memories and computing resources. The optical switch is used as a key ring in an optical interconnection network, and the development of a large-scale optical switch with high speed, low loss, low power consumption and high transmission bandwidth has important significance for the development of a future data center network. The manufacturing process of the silicon-based photonic device is compatible with a mature CMOS (complementary metal oxide semiconductor) process, so that the silicon-based photonic device has the advantages of small size, low power consumption, low cost and the like, and has the potential of realizing large-scale optical switches in an integrated manner.
In recent years, silicon-based optical switches have been extensively studied. The silicon-based optical switch unit mainly comprises two structures of a Mach-Zehnder interferometer and a micro-ring resonator. The optical switch based on the Mach-Zehnder interferometer has a large transmission bandwidth, can realize the switching of a plurality of channels, but has a large phase shifter size required for realizing the state switching of the optical switch. Compared with the prior art, the optical switch based on the micro-ring resonator has the advantages of small size, low power consumption and the like due to the resonance characteristic, and is more suitable for large-scale expansion. However, the resonant wavelength of the micro-ring is easily affected by process errors and ambient temperature, and dynamic feedback adjustment of the micro-ring is required in practical application. The transmission spectral line of a single micro-ring is of a Lorentz type, the bandwidth is narrow, a structure that a plurality of micro-rings are connected in series or in parallel in a cascade mode can be adopted for improving the frequency spectrum bandwidth, and the structural complexity and the processing difficulty can be increased. Compared with silicon waveguide, the silicon nitride waveguide has small refractive index contrast with cladding material, so that the preparation tolerance of the waveguide size is large, the silicon nitride has small thermo-optic coefficient and is insensitive to temperature, and the silicon nitride waveguide can be used for solving the problems faced by a silicon-based micro-ring optical switch. The silicon nitride waveguide can be integrated with silicon on insulator commonly used for silicon-based photoelectronics, and provides a new dimension for the design of silicon optical devices.
The large-scale optical switch is composed of a plurality of unit devices, and the unit devices are connected through waveguides. When the scale of the unit device reaches a certain degree, a large amount of waveguide intersection is inevitably generated between the connected waveguides, and the optical field is scattered in a waveguide intersection region, so that serious loss and crosstalk are caused. Researchers at the university of toronto provide a multilayer silicon-based silicon nitride integrated platform, two layers of silicon nitride waveguides are integrated on a silicon waveguide layer, low-loss waveguide crossing is realized by utilizing the distance between the silicon waveguide and the top layer of silicon nitride waveguide, and transmission of optical signals among the three layers of waveguides is realized by utilizing the silicon nitride waveguide in the middle layer. By utilizing the silicon-silicon nitride overpass type waveguide crossing scheme, the loss is reduced by one order of magnitude compared with the traditional planar waveguide crossing optimization result. The advanced industrial research institute of japan and researchers at the university of columbia have reported optical switches based on a silicon-silicon nitride integrated platform in sequence, but because it is difficult to achieve both low-loss waveguide crossing and high-efficiency interlayer transmission with only one layer of silicon nitride waveguide, no advantage can be embodied.
The emergence of multilayer silicon-based silicon nitride integrated platforms is very advantageous for solving a plurality of problems of large-scale optical switches, but the existing implementation scheme is not mature, and the design scheme of the optical switch which fully exerts the advantages of the integrated platforms is not provided for a while.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a doped silicon heater type micro-ring optical switch based on silicon-silicon nitride three-dimensional integration. The optical switch has the advantages of simple structure and good stability, does not need extra power consumption to compensate process errors, and is easy to expand into a large-scale optical switch. The invention can fully exert the advantages of the three-dimensional integrated platform, simultaneously realize low-loss passive devices and high-performance active devices, and is beneficial to promoting the development of on-chip optoelectronic integrated devices.
The technical scheme adopted by the invention is as follows:
a micro-ring optical switch based on silicon-silicon nitride three-dimensional integration is characterized in that two layers of silicon nitride waveguides are integrated on a silicon waveguide, and the waveguide layers are isolated by silicon dioxide; the silicon waveguides are arranged in the transverse direction, and the silicon nitride waveguides at the top layer are arranged in the longitudinal direction to form a three-dimensional waveguide cross junction; the middle layer silicon nitride waveguide is bent into a ring and connected in series to form a plurality of cascade micro-rings, and the cascade micro-rings are respectively vertically coupled with the transverse silicon waveguide and the longitudinal top layer silicon nitride waveguide to form a three-dimensional integrated cascade micro-ring resonator; the silicon nitride waveguide in the middle layer is bent by 90 degrees to form a steering waveguide, and the steering waveguide is respectively connected with the silicon nitride-silicon nitride waveguide interlayer coupler and the silicon nitride-silicon waveguide interlayer coupler to be connected with the silicon nitride waveguide and the silicon waveguide on the top layer, so that the transmission of an optical signal in a three-dimensional structure is realized; and a ring-shaped structure is formed below the middle layer silicon nitride micro ring by utilizing the silicon waveguide and is doped to form the waveguide type micro heater, and the resonance wavelength of the middle layer silicon nitride micro ring is changed by electrifying the waveguide type micro heater to generate heat.
Both the silicon waveguide and the silicon nitride waveguide operate in a single mode condition.
The silicon waveguide and the middle layer silicon nitride waveguide are smaller than 0.5 mu m in the height direction, the two layers of silicon nitride waveguides are smaller than 0.5 mu m in the height direction, and the distance between the silicon waveguide and the top layer silicon nitride waveguide is larger than 0.8 mu m in the height direction, so that the low loss of the three-dimensional waveguide cross junction is ensured.
The waveguide interlayer coupler is composed of two reverse tapered waveguides with different heights, the width and the length of the two tapered waveguides are designed by adopting an evanescent wave coupling principle, and low-loss interlayer coupling can be realized.
The three-dimensional integrated cascade micro-ring resonator comprises a plurality of silicon nitride micro-rings, flat spectral response is realized by designing coupling coefficients among the silicon nitride micro-rings and coupling coefficients of the silicon nitride micro-rings, a silicon waveguide and a top silicon nitride waveguide, and the working bandwidth of the device is increased.
The waveguide type micro heater is directly formed by doping silicon waveguides, the structure of the waveguide type micro heater is also a micro-ring structure, the size of the waveguide type micro heater is slightly smaller than that of a silicon nitride micro ring, and low-power-consumption thermal phase shifting is realized.
The waveguide type micro-heater can reduce heat diffusion to the periphery by etching the air groove near the waveguide of the heating area, and can further etch the silicon substrate below the waveguide to prevent the heat from being dissipated from the substrate.
The silicon nitride micro-ring has a larger bending radius than the silicon waveguide, and can be further reduced in size through a Euler type bending design with a gradually changed curvature radius.
Compared with the prior art, the invention has the following beneficial effects:
1) the micro-ring resonator is made of silicon nitride materials, so that the process tolerance is large, the temperature is insensitive, and the state of the optical switch is calibrated without extra power consumption;
2) the advantages of silicon-silicon nitride three-dimensional integration are fully exerted, low-loss passive devices including waveguide cross junctions and waveguide interlayer couplers can be realized, silicon waveguides can be directly doped to form heaters, and thermal tuning efficiency is effectively improved;
3) the optical switch of the invention has simple structure and easy expansion, and is very suitable for realizing a large-scale optical switch by utilizing a cross connection mode.
Drawings
FIG. 1 is a schematic structural diagram of a micro-ring optical switch based on three-dimensional integration of silicon-silicon nitride according to the present invention;
FIG. 2 is a schematic structural diagram of a three-dimensional silicon-silicon nitride waveguide cross-junction of the present invention;
FIG. 3 is a schematic diagram of a waveguide coupler structure in a three-dimensional integrated cascaded micro-ring resonator of the present invention;
FIG. 4 is a schematic diagram of a 90 degree turn three dimensional waveguide interlayer coupler according to the present invention;
FIG. 5 is a schematic cross-sectional view of a phase shifter according to the present invention;
fig. 6 is a schematic diagram of the working principle of the optical switch of the present invention.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be purely exemplary of the invention and are not to be considered as limiting the scope of the invention.
As shown in fig. 1, the present invention provides a micro-ring optical switch based on silicon-silicon nitride three-dimensional integration. Two layers of silicon nitride waveguides (102, 103) are integrated on a silicon waveguide (101), and the waveguide layers are isolated by silicon dioxide; the silicon waveguides (101) are arranged in the transverse direction, and the top silicon nitride waveguides (103) are arranged in the longitudinal direction to form a three-dimensional waveguide cross junction (201); one end of the silicon waveguide (101) is used as an input end of an optical signal, and the other end of the silicon waveguide is used as a through end; the middle layer silicon nitride waveguide (102) forms a silicon nitride turning waveguide (104) through 90-degree bending, and forms a silicon nitride micro-ring (105) through 360-degree bending; one end of the top silicon nitride waveguide (103) is connected with the silicon nitride turning waveguide (104) through the silicon nitride-silicon nitride waveguide interlayer coupler (202), the silicon nitride turning waveguide (104) is connected with one end of the other silicon waveguide (101) through the silicon nitride-silicon waveguide interlayer coupler (203), and the other end of the silicon waveguide (101) serves as a cross end; the other end of the top silicon nitride waveguide (103) is connected with a silicon nitride turning waveguide (104) through a silicon nitride-silicon nitride waveguide interlayer coupler (202), the silicon nitride turning waveguide (104) is connected with one end of another silicon waveguide (101) through a silicon nitride-silicon waveguide interlayer coupler (203), and the other end of the silicon waveguide (101) serves as an uploading end; the N silicon nitride micro-rings (105) are connected in series to form a cascade silicon nitride micro-ring (301), wherein N is more than or equal to 1; the silicon waveguide (101) is bent into a ring shape below the silicon nitride micro-ring (105) and doped to form a waveguide type micro-heater (302), the waveguide type micro-heater (302) is electrified to generate heat, the resonance wavelength of the silicon nitride micro-ring (105) is changed, and then the optical signal on the working wavelength is switched on and off.
The following is a specific example:
the silicon waveguide and the silicon nitride waveguide both work in a single mode, the design supports the transmission of a transverse electric mode (TE) basic mode, the conventional size of the silicon waveguide working in a C wave band is 500nm multiplied by 220nm, and the conventional size of the silicon nitride waveguide is 1 mu m multiplied by 400 nm.
Fig. 2 shows a three-dimensional silicon-silicon nitride waveguide cross junction according to the present invention, in which the cross region is composed of a widened silicon ridge waveguide and a top silicon nitride strip waveguide, and the diffusion of the optical field can be reduced by using a larger distance between the two waveguides. The effective refractive index of the waveguide is slowly changed by using tapered waveguides to transition the wide waveguide to a single mode waveguide at the four ports.
In the three-dimensional integrated cascade micro-ring resonator structure, a straight waveguide is coupled with a micro-ring, and the micro-ring is coupled with the micro-ring through a directional coupler. The structure of coupling the silicon straight waveguide and the middle layer silicon nitride micro-ring is shown in fig. 3(a), because the difference of effective refractive indexes of the silicon waveguide and the silicon nitride waveguide in the conventional size is large, the coupling between the two layers of waveguides is not facilitated, the width of the silicon waveguide is reduced by utilizing the tapered waveguide, the binding capacity of the tapered waveguide on an optical field is weakened, and the mode field in the silicon waveguide and the silicon nitride micro-ring can interact through evanescent waves and then is coupled into the middle layer silicon nitride micro-ring from the silicon straight waveguide. Similarly, the middle layer silicon nitride micro-rings and the top layer silicon nitride straight waveguides are coupled through evanescent waves, and the structures are respectively shown in fig. 3(b) and (c).
Considering that the micro-rings are easily affected by process errors, the present embodiment sets the number of the series silicon nitride micro-rings to be N-2 when the operating bandwidth and the process errors of the device are measured. By utilizing a transmission matrix method, coupling coefficients of the silicon waveguide and the silicon nitride micro-ring, between the silicon nitride micro-rings and the top layer silicon nitride waveguide are designed, so that a larger bandwidth is obtained, and the performance of the device is improved.
Fig. 4 is a 90 ° steerable three-dimensional waveguide interlayer coupler structure of the present invention, comprising two interlayer couplers (202, 203) and a silicon nitride steerable waveguide (104). The silicon waveguide and the top silicon nitride waveguide are respectively arranged in the transverse direction and the longitudinal direction, the silicon nitride waveguide in the middle layer is utilized to complete 90-degree turning, and two conical waveguide structures in opposite directions are utilized between any two adjacent waveguide layers to complete mode field coupling, so that optical signals are transmitted between the three layers of waveguides.
FIG. 5(a) is a schematic cross-sectional view of a phase shifter according to the present invention. The ring-shaped silicon waveguide is lightly doped directly below the silicon nitride micro-ring, voltage is applied to two ends of the doped silicon waveguide to form a heat source, heat is conducted to the silicon nitride micro-ring in the middle layer, and the optical signal on the working wavelength is switched on and off by adjusting the resonance wavelength of the micro-ring. By etching air grooves near the heating zone waveguide, heat diffusion to the surroundings can be reduced (fig. 5(b)), and the silicon substrate under the waveguide can be further etched to prevent heat loss from the substrate (fig. 5 (c)). The micro-heater formed with the underlying silicon waveguide doping has a higher thermal tuning efficiency than the titanium nitride metal heater (fig. 5 (d)). The phase shifter has a response speed on the order of hundreds of microseconds.
Silicon nitride is used as a waveguide material, the effective refractive index of the silicon nitride is smaller than that of silicon, the constraint capacity of the silicon nitride on an optical field is weak, and the transmission loss caused by rough side walls can be relieved. But the corresponding waveguide bend radius would be larger, with a conventional 1 μm x 400nm size silicon nitride waveguide radius of 60 μm, the present example further reducing the bend radius by designing a Euler-type bend waveguide with a gradual change in radius of curvature.
Fig. 6 is a schematic diagram of the working principle of the optical switch of the present invention. When the optical signal with the working wavelength is not matched with the resonance wavelength of the micro-ring, the optical signal is transmitted along the original path, crosses the waveguide and is finally output from the through port, and the optical switch works in an 'off' state at the moment. When the doped silicon heater is used for adjusting the matching of the resonance wavelength of the micro-ring and the optical signal of the working wavelength, the optical signal is coupled into the silicon nitride micro-ring in the middle layer from the silicon waveguide, then is coupled into the silicon nitride waveguide in the top layer, completes continuous waveguide interlayer conversion after waveguide crossing, and finally is output from a crossing port, and at the moment, the optical switch works in an 'on' state. When the optical switch works in an 'on' state, the optical switch supports simultaneous transmission of optical signals with two paths of working wavelengths, and the two optical signals are processed in parallel along the clockwise direction and the anticlockwise direction by utilizing the cross end/the uploading end of the micro-ring, so that the signal capacity of transmission can be increased.
The above description is only one specific embodiment of the present invention, and it will be understood by those skilled in the art that these are merely examples, and that further modifications may be made on the basis of this embodiment in accordance with the principles of the present invention. The scope of the invention is therefore defined by the appended claims.
Claims (8)
1. A micro-ring optical switch based on silicon-silicon nitride three-dimensional integration is characterized by comprising a bottom silicon waveguide (101), and a middle silicon nitride waveguide (102) and a top silicon nitride waveguide (103) which are integrated on the silicon waveguide (101);
the silicon waveguides (101) are arranged in the transverse direction, and the top silicon nitride waveguides (103) are arranged in the longitudinal direction to form a three-dimensional waveguide cross junction (201); one end of the silicon waveguide (101) is used as an input end of an optical signal, and the other end of the silicon waveguide is used as a through end; the middle layer silicon nitride waveguide (102) forms a silicon nitride turning waveguide (104) through 90-degree bending, and forms a silicon nitride micro-ring (105) through 360-degree bending; one end of the top silicon nitride waveguide (103) is connected with the silicon nitride turning waveguide (104) through a silicon nitride-silicon nitride waveguide interlayer coupler (202), the silicon nitride turning waveguide (104) is connected with one end of the other silicon waveguide (101) through a silicon nitride-silicon waveguide interlayer coupler (203), and the other end of the silicon waveguide (101) serves as a cross end; the other end of the top silicon nitride waveguide (103) is connected with the silicon nitride turning waveguide (104) through a silicon nitride-silicon nitride waveguide interlayer coupler (202), the silicon nitride turning waveguide (104) is connected with one end of the other silicon waveguide (101) through a silicon nitride-silicon waveguide interlayer coupler (203), and the other end of the silicon waveguide (101) serves as an uploading end; the N silicon nitride micro-rings (105) are connected in series to form a cascade silicon nitride micro-ring (301), wherein N is more than or equal to 1; the silicon waveguide (101) is bent into a ring shape below the silicon nitride micro-ring (105) and doped to form a waveguide type micro-heater (302), the waveguide type micro-heater (302) is electrified to generate heat, the resonance wavelength of the silicon nitride micro-ring (105) is changed, and then the optical signal on the working wavelength is switched on and off.
2. The silicon-silicon nitride three-dimensional integration-based microring optical switch according to claim 1, wherein the silicon waveguide (101) and the middle layer silicon nitride waveguide (102) are spaced apart by less than 0.5 μm in the height direction, the middle layer silicon nitride waveguide (102) and the top layer silicon nitride waveguide (103) are spaced apart by less than 0.5 μm in the height direction, and the silicon waveguide (101) and the top layer silicon nitride waveguide (103) are spaced apart by more than 0.8 μm in the height direction, so that the loss of the three-dimensional waveguide cross-junction (201) is ensured to be low.
3. The silicon-silicon nitride three-dimensional integration-based micro-ring optical switch as claimed in claim 1, wherein the waveguide interlayer coupler (202, 203) is composed of two reverse tapered waveguides with different heights, and the width and length of the two tapered waveguides are designed by using evanescent wave coupling principle, so as to realize low-loss interlayer coupling.
4. The silicon-silicon nitride three-dimensional integration-based micro-ring optical switch according to claim 1, wherein by designing the coupling coefficient between each silicon nitride micro-ring (105) in the cascaded silicon nitride micro-ring (301) and the coupling coefficients of the cascaded silicon nitride micro-ring (301), the silicon waveguide (101) and the top silicon nitride waveguide (103), a flat spectral response is realized, and the operating bandwidth of the device is increased.
5. The silicon-silicon nitride three-dimensional integration-based microring optical switch according to claim 1, wherein the waveguide-type microheater (302) is directly formed by doping a silicon waveguide, has the same structure as the silicon nitride microring (105), has a slightly smaller size than the silicon nitride microring (105), and realizes low-power thermal phase shift.
6. The waveguide type micro-heater in claim 5, wherein the heat diffusion to the surroundings is reduced by etching air grooves in the vicinity of the waveguide in the heating zone, and the silicon substrate under the waveguide is further etched to prevent heat loss from the substrate.
7. The optical switch of claim 1, wherein the silicon nitride waveguide (102) is used to form a cascaded silicon nitride micro-ring (301), which has high process tolerance and does not require extra power consumption to compensate for the resonant wavelength shift caused by process error. Under the condition of no power-on, the resonance wavelength of the cascade silicon nitride micro-ring (301) is not on the working wavelength, and an input optical signal is output from the through end; under the condition of power-up, the resonant wavelength of the cascade silicon nitride micro-ring (301) is red-shifted to the working wavelength, and an input optical signal is output from a cross end to realize switching.
8. The silicon-silicon nitride based three-dimensional integrated micro-ring optical switch according to claim 1, wherein the waveguide layers are separated from each other by silicon dioxide.
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