CN113963835A - Diamond Schottky type beta radiation volt effect miniature nuclear battery - Google Patents

Diamond Schottky type beta radiation volt effect miniature nuclear battery Download PDF

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Publication number
CN113963835A
CN113963835A CN202110999510.4A CN202110999510A CN113963835A CN 113963835 A CN113963835 A CN 113963835A CN 202110999510 A CN202110999510 A CN 202110999510A CN 113963835 A CN113963835 A CN 113963835A
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diamond
thickness
source
layer
beta
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CN202110999510.4A
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张光辉
刘玉敏
林坤宇
桑天贵
王物达
罗朝君
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East China Institute of Technology
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East China Institute of Technology
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials

Abstract

The invention provides a diamond Schottky type beta radiation volt effect micro nuclear battery, which comprises: the beta radioactive source provides energy-carrying beta particles; the diamond moderator moderates the high-energy beta particles emitted by the pure beta radiation source to obtain low-energy beta particles; the diamond Schottky diode absorbs the energy-carrying beta particles and converts the energy of the energy-carrying beta particles into electric energy; the battery case protects the internal structure of the battery and shields the unused energy-carrying beta particles and secondary gamma rays. Because the diamond material has the characteristics of large forbidden band width, strong radiation resistance, excellent electrical property of the highly doped diamond, high temperature resistance, high pressure resistance, extremely high chemical inertness and the like, the beta radiation volt effect micro nuclear battery based on the diamond material has high energy conversion efficiency, stable output, long service life and simple protection.

Description

Diamond Schottky type beta radiation volt effect miniature nuclear battery
Technical Field
The invention relates to a battery device for converting decay energy of radioactive nuclide into electric energy by using a semiconductor device, belonging to the technical field of nuclear energy utilization.
Background
In recent years, with the progress of science and technology, the development and application of micro-electromechanical systems have been rapidly developed. They are generally characterized by small size, low power, light weight, easy movement, stable performance, low cost, and implantability. However, further development of microelectromechanical systems has been limited by the lack of miniature power supplies. Common miniature power sources include miniature fuel cells, miniature chemical cells, miniature internal combustion engines, and miniature solar cells. However, none of these micro-batteries can meet the micro-power requirements of micro-electromechanical devices well. First, micro fuel cells, micro chemical cells and micro internal combustion engines require constant refueling from the outside or intermittent recharging. At the same time, they are inefficient in energy conversion and difficult to miniaturize to the micron and even nanometer scale required by micro-electromechanical systems. Secondly, although solar cells have the characteristics of cleanness, safety, mature technology and the like and can be miniaturized to micron or even nanometer level by adopting a micro-nano processing technology, the solar cells cannot normally work in dark or sunlight unstable environments. Finally, nuclear batteries are an ideal choice for power supplies of micro-electromechanical systems due to the characteristics of miniaturization, integration, high energy density, long service life, independence on external energy and the like.
At present, a beta radiation volt effect micro nuclear battery based on semiconductor devices (PN junctions, PIN junctions and Schottky diodes) is applied to the fields of aeronautical and astronautic detection, deep sea and deep land detection, meteorological monitoring in severe environment areas such as high mountain polar regions, medical instruments and the like. The operating principle of this type of nuclear battery is: when the energy-carrying beta particles interact with a semiconductor material, a large number of electron-hole pairs are generated, the built-in electric field of the semiconductor device can separate the radiation electron-hole pairs in the depletion layer and then sweep out the region completely, and the charge collection efficiency is 100%. The radiation electron-hole pairs outside the depletion layer can be separated only by diffusing into the depletion layer and then are respectively collected by the positive electrode and the negative electrode, so that the charge collection efficiency of the region outside the depletion layer is low. The radioactive source in a betavoltaic effect miniature nuclear battery is generally pure beta decay and releases relatively low energy beta particles. Pure diamond is a good insulator, the resistivity is very high, but the resistivity of the doped diamond can be reduced by many orders of magnitude, so that the doped diamond becomes a typical semiconductor material, and the doped diamond has the advantages of large forbidden band width, high saturated carrier (electron and hole) mobility, good thermal conductivity and chemical inertness, large electron density, strong radiation resistance and the like. The research result shows that: these advantages of diamond material contribute to the improvement of the service life and energy conversion efficiency of beta-radiometric volt effect micro nuclear batteries. In particular, diamond schottky diodes are an ideal choice for beta-radiation volt effect micro nuclear batteries.
Disclosure of Invention
The invention provides a diamond Schottky type beta radiation volt effect based miniature nuclear battery, which is a device for converting decay energy of a radioactive source into electric energy by processing and integrating a pure beta radioactive source, a diamond moderator and a diamond Schottky diode by utilizing a mature preparation process. The nuclear battery of the type is an ideal micro power supply for a micro electro mechanical system due to high energy conversion efficiency, strong radiation resistance, stable output and long service life.
In order to achieve the purpose, the technical solution of the invention is as follows:
a diamond Schottky type beta radiation volt effect micro nuclear battery (see figure 1 and description of the figures).
The pure beta radioactive source (1) is a sheet-shaped cylindrical solid radioactive source. Selected from tritium sources (3HXTi), a source of nickel-63: (63Ni), promethium-147 source (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y). Further, considering the self-absorption effect of beta-emitting source, tritium source: (3HXTi) is less than 2 μm thick; a source of nickel-63 (63Ni) is less than 3 μm; (promethium-147 source: (147Pm2O3) Is less than 43 μm; strontium/yttrium-90 source (90Sr/90Y) is less than 1 cm.
Said can be disassembledThe diamond moderator (2) is cylindrical and has the same radius as the pure beta radioactive source (1). The thickness of the diamond moderator (2) is changed to moderate the high-energy beta particles emitted by the pure beta radiation source to obtain low-energy beta particles which are lower than the energy threshold of the diamond Schottky diode for resisting radiation damage and meet the requirement of the output power of the micro electro mechanical system. Further, the tritium source (A), (B), (C) and C) a) and a) and (C) a)3HXTi), a source of nickel-63: (63Ni), promethium-147 source (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) the thicknesses of the diamond moderator (2) in the corresponding nuclear battery are less than 0.2 μm, 23 μm, 50 μm and 3.2mm, respectively. Among them, the diamond moderator (2) is mainly applied to the source of promethium-147 (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) corresponding nuclear batteries.
The diamond Schottky diode is cylindrical, the radius of the diamond Schottky diode is the same as that of the pure beta radioactive source (1), and a P-type high-doped diamond substrate layer (3), a P-type low-doped diamond buffer layer (4), an intrinsic diamond layer (5) and a Schottky electrode layer (6) are sequentially stacked in the diamond Schottky diode.
The P-type highly-doped diamond substrate layer (3) is a (001) oriented boron-doped diamond layer, the thickness of the P-type highly-doped diamond substrate layer is less than 200nm, and the concentration of doped boron atoms is NA>1×1018cm-3(ii) a Further, the P-type highly-doped diamond substrate layer (3) is an implanted front electrode of the nuclear battery.
The P-type low-doped diamond buffer layer (4) is a (001) oriented diamond epitaxial layer and is doped with boron atom concentration NA<1×1014cm-3And the thickness is less than 20 nm.
Said tritium source (A)3HXTi), a source of nickel-63: (63Ni), promethium-147 source (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) the thickness of the intrinsic diamond (5) is less than 0.2 μm, 23 μm, 50 μm and 3.2mm, respectively.
The Schottky electrode layer (6) is of a field plate structure, and the thickness is less than 30 nm. Further, the Schottky electrode layer (6) is a metal composite layer formed by a single metal layer or a plurality of single metal layers formed by a plurality of metals. Furthermore, the work function of the metal material in the metal layer of the Schottky electrode layer (6) which is in contact with the intrinsic diamond layer (5) is smaller than the forbidden band width of diamond.
And a first lead and a second lead are respectively and correspondingly arranged on the P-type highly-doped diamond substrate layer (3) and the Schottky electrode (6), and the diamond Schottky diode is obtained by packaging after annealing.
The battery housing (7) and its removable portion (8) are of a cubic structure. Furthermore, the battery shell (7) and the detachable part (8) thereof are made of high polymer polyethylene plastic with low density, and the thickness is less than 1.5 cm.
In conclusion, the invention provides a technical scheme of a diamond Schottky type beta radiation volt effect micro nuclear battery by combining the self-absorption effect of a radioactive source, the ionization range of the radioactive source in a transduction material, the preparation technology of the diamond Schottky diode and radiation protection. The technical scheme greatly improves the energy conversion efficiency and the energy output power of the nuclear battery, prolongs the service life of the nuclear battery and has stable performance.
Drawings
Fig. 1 is an axial cross-sectional schematic view of the diamond schottky type beta-radiation volt effect micro nuclear battery.
Fig. 2 is a top view of the diamond schottky type beta-radiative volt effect micro nuclear battery.
Detailed Description
The main contents of the research of the beta radiation volt effect micro nuclear battery comprise: the self-absorption effect of a beta radioactive source, the back scattering of energy-carrying beta particles on the surface of a material, the ionization range of the energy-carrying beta particles in a transduction material, the nuclear battery preparation process and the nuclear battery output performance research. The research result shows that: the diamond Schottky diode is an ideal transducer device of a beta radiation volt effect miniature nuclear battery.
The self-absorption phenomenon is generated by the interaction between the energy-carrying beta particles of the decay of the beta radioactive source and the radioactive source. This phenomenon results in that as the thickness of the beta radiation source increases, the surface emergent power thereof increases continuously and then approaches a saturation value. AGenerally, a source of tritium(s) ((iii))3HXTi), a source of nickel-63: (63Ni), promethium-147 source (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) is about 2 mu m, 3 mu m, 43 mu m and 1cm respectively when the surface emergent power reaches a saturation value. Therefore, the thickness of the cylindrical solid sheet-shaped pure beta radioactive source (1) is smaller than the thickness corresponding to the surface emergent power reaching the saturation value. That is, the tritium source (A), (B), (C) and C) a3HXTi) is less than 2 μm thick; a source of nickel-63 (63Ni) is less than 3 μm; (promethium-147 source: (147Pm2O3) Less than 43 μm thick and a strontium/yttrium-90 source (b90Sr/90Y) is less than 1 cm.
In order to obtain low-energy beta particles which are lower than the energy threshold of the diamond Schottky diode for resisting radiation damage and meet the requirement of the output power of a micro-electro-mechanical system by slowing the high-energy beta particles emitted by the pure beta radioactive source, a diamond slowing body is arranged in the nuclear battery. Generally, a source of tritium(s) ((iii))3HXTi), a source of nickel-63: (63Ni), promethium-147 source (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) ionization ranges within the diamond material are around 0.2, 23, 50 and 3.2mm, respectively. Thus, the tritium source described in the present invention (A), (B), (C) and C)3HXTi), a source of nickel-63: (63Ni), promethium-147 source (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) the thickness of the diamond moderator (2) with adjustable thickness is less than 0.2 μm, 23 μm, 50 μm and 3.2mm respectively. Further, the diamond moderator (2) is mainly used in the source of promethium-147 (1)147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) corresponding nuclear batteries.
In order to optimize the performance of the diamond Schottky diode-based beta radiation volt effect micro nuclear battery, a P-type highly-doped diamond film is used as an implanted electrode in the diamond Schottky type beta radiation volt effect micro nuclear battery to reduce the back scattering energy loss of energy-carrying beta particles on the surface of a nuclear battery energy conversion device; further, compared with an N-type diamond film, the P-type diamond film is used as the emitting layer of the nuclear battery, so that the charge collection efficiency in the nuclear battery can be effectively improved; furthermore, matching the ionization range of the beta source inside the transducer device to its intrinsic layer region is a critical issue for enhancing the nuclear battery. Finally, compared with the metal with higher work function, the metal with lower work function is beneficial to improving the height of the P-M type diamond Schottky barrier, reducing the leakage current of the diamond Schottky diode and improving the open-circuit voltage and the energy conversion efficiency of the nuclear battery.
The diamond Schottky diode is internally and sequentially stacked with a P-type high-doped diamond substrate layer (3), a P-type low-doped diamond buffer layer (4), an intrinsic diamond layer (5) and a Schottky electrode layer (6), and the preparation method is as follows:
step 1: synthesizing a P-type highly-doped diamond substrate layer (3) by adopting a chemical vapor deposition technology, wherein the crystal orientation is (001), the thickness is less than 200nm, and the boron atom doping concentration is NA>1×1018cm-3. Further, the P-type highly-doped diamond substrate layer (3) is an implanted front electrode of the nuclear battery.
Step 2: epitaxially growing a P-type low-doped diamond buffer layer (4) on the P-type high-doped diamond substrate layer (3) by adopting a chemical vapor deposition technology, wherein the N-type low-doped diamond buffer layer is doped with boron atom with concentrationA<1×1014cm-3And the thickness is less than 20 nm.
And step 3: and (3) epitaxially growing an intrinsic diamond layer (5) on the P-type low-doped diamond buffer layer (4) prepared in the step (2) by adopting a chemical vapor deposition technology. Further, the intrinsic diamond layer (5) is matched to the extent of ionization of the pure beta-emitting source in diamond, and thus the tritium source(s) ((5))3HXTi), a source of nickel-63: (63Ni), promethium-147 source (147Pm2O3) And a strontium/yttrium-90 source (C90Sr/90Y) the thickness of the intrinsic diamond layer (5) is less than 0.2 μm, 23 μm, 50 μm and 3.2mm, respectively.
And 4, step 4: and (3) performing surface treatment on the intrinsic diamond layer (5) prepared in the step (3) to form an oxygen termination surface state. Further, surface cleaning was performed using acetone, deionized water, and ultrasonic waves.
And 5: the Schottky electrode layer 6 is of a field plate structure, and the thickness is less than 30 nm. And (3) depositing a metal single metal layer (such as metal hafnium) with the work function smaller than the forbidden band width of the diamond on the surface of the intrinsic diamond layer (5) prepared in the step (4) by adopting an electron beam evaporation coating technology to form a Schottky electrode layer (6), or depositing a plurality of metal composite layers of the single metal layer (such as titanium, nickel, platinum, gold and aluminum) on the metal layer (such as metal hafnium) with the work function smaller than the forbidden band width of the diamond to form the Schottky electrode layer (6).
Step 6: and a first lead and a second lead are respectively and correspondingly arranged on the P-type highly-doped diamond substrate layer (3) and the Schottky electrode (6). Further, the annealing treatment of the diamond PIM Schottky diode is completed under the protection of a nitrogen atmosphere. Further, the diamond PIM schottky diode is packaged.
The battery housing (7) and its removable portion (8) are of a cubic structure. Furthermore, the battery shell (7) and the detachable part (8) thereof are made of high polymer polyethylene plastic with low density, and the thickness is less than 1.5 cm.
The specific embodiment of the invention details the theoretical basis and the specific technical scheme of the design of the diamond Schottky type beta radiation volt effect micro nuclear battery. It should be noted that the above description is only a specific example of the present invention, and it is not intended to limit the design and fabrication of the nuclear battery of the present invention. Further, any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present invention are included in the protection scope of the present invention. Furthermore, for simplicity and clarity of illustration, the drawing figures illustrate only typical structures and omit certain well-known structures to avoid unnecessarily obscuring the description, and the cross-sections of the drawing figures are not necessarily drawn to scale.
Description of the reference numerals
[ invention ]
(1): pure beta radioactive source
(2): detachable diamond moderator
(3): p-type highly-doped diamond substrate layer
(4): p-type low-doped diamond buffer layer
(5): intrinsic diamond layer
(6): schottky electrode layer
(7): battery case
(8): a battery housing removable portion.

Claims (9)

1. A diamond Schottky type beta radiation volt effect miniature nuclear battery, comprising:
a beta radiation source;
a detachable diamond moderator body;
the diamond Schottky diode is internally and sequentially stacked and arranged into a P-type high-doped diamond substrate layer, a P-type low-doped diamond buffer layer, an intrinsic diamond layer and a Schottky electrode layer;
a battery housing having a removable portion.
2. The diamond schottky type beta-radiation volt effect micro nuclear battery as claimed in claim 1, wherein the beta radiation source is a tritium source (tritium) with a thickness less than 2 μm3HXTi), a nickel-63 source having a thickness of less than 3 μm: (63Ni), a promethium-147 source having a thickness of less than 43 μm (147Pm2O3) Or a strontium/yttrium-90 source having a thickness of less than 1cm (90Sr/90Y)。
3. The diamond schottky type beta-radiationvodkeeffect micro nuclear battery as in claim 1, wherein the thickness of the detachable diamond moderator is in the tritium source(s) ((r))3HXTi) less than 0.2 μm in a corresponding nuclear cell, the thickness of the detachable diamond moderator being in a nickel-63 source (63Less than 23 μm in Ni-equivalent nuclear cells, said detachable diamond moderator being at a promethium-147 source (thickness: 23 μm with no: 23 μm) with a: 23 μm in Ni) thickness of said detachable diamond-23 μm, and thickness of said detachable diamond-23 μm, of said detachable diamond-147, in core-23 μm, in core-1, in thickness of said detachable-equivalent, of said detachable-to-of said detachable-core-moderating, in core-to-23 μm, in core-based core-based-core-to-based battery, in core-to-core-based on147Pm2O3) Less than 50 μm in the corresponding nuclear battery,Or the thickness of the detachable diamond moderator body is in the strontium/yttrium-90 source (90Sr/90Y) less than 3.2mm in the corresponding nuclear cell.
4. The diamond schottky type beta-radiation volt effect micro nuclear cell as in claim 1, wherein said diamond schottky diode comprises a P-type highly doped diamond substrate layer synthesized by chemical vapor deposition technique, said P-type highly doped diamond substrate layer having a thickness of less than 200nm, said P-type highly doped diamond substrate layer having a boron atom concentration N doped thereinA>1×1018cm-3And the P-type highly-doped diamond substrate layer is an implanted front electrode of the nuclear battery.
5. The diamond schottky type beta-radiation volt effect micro nuclear cell as in claim 1, wherein said diamond schottky diode comprises a P-type low doped diamond buffer layer formed by chemical vapor deposition technique, said P-type low doped diamond buffer layer having a concentration of doped boron atoms NA<1×1014cm-3And the thickness of the P type low-doped diamond buffer layer is less than 20 nm.
6. The diamond schottky type beta-radiation volt effect micro nuclear battery as in claim 1, wherein said diamond schottky diode includes an intrinsic diamond layer made using chemical vapor deposition techniques, the thickness of said intrinsic diamond layer matching the ionization range of said beta radiation source in diamond.
7. The diamond schottky type beta-radiationvodkeeffect micronuclear cell of claim 6 wherein the thickness of the intrinsic diamond layer is at the tritium source(s) ((r))3HXTi) less than 0.2 μm in the corresponding nuclear cell, and the intrinsic diamond layer has a thickness of nickel-63 source: (63Ni) less than 23 μm in nuclear cells, said intrinsic diamond layer having a thickness of promethium-147 source(s) ((II)147Pm2O3) Corresponding coreLess than 50 μm in the cell, or the thickness of the intrinsic diamond layer is in the strontium/yttrium-90 source: (90Sr/90Y) less than 3.2mm in the corresponding nuclear cell.
8. The diamond schottky type beta-radiation volt effect micro nuclear battery as claimed in claim 1, wherein said schottky electrode layer is a field plate structure, said schottky electrode layer having a thickness of less than 30 nm; the Schottky electrode layer comprises a single metal layer with work function smaller than the forbidden bandwidth of the diamond deposited on the surface of the intrinsic diamond layer by adopting an electron beam evaporation coating technology, or a metal composite layer deposited on the single metal layer with work function smaller than the forbidden bandwidth of the diamond.
9. The diamond schottky type beta radiation volt effect microbattery of claim 1 wherein said cell housing is a cube structure, said cell housing is constructed of low density polymer polyethylene plastic, and said cell housing has a thickness of less than 1.5 cm.
CN202110999510.4A 2021-08-29 2021-08-29 Diamond Schottky type beta radiation volt effect miniature nuclear battery Pending CN113963835A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130264907A1 (en) * 2012-04-05 2013-10-10 Raytheon Company Betavoltaic battery with diamond moderator and related system and method
CN108492905A (en) * 2018-05-28 2018-09-04 吉林大学 A kind of diamond PIM Schottky types β radiation volta effect nuclear battery
CN210223589U (en) * 2018-06-08 2020-03-31 吉林大学 Silicon carbide PIN junction type β radiation volt effect based nuclear battery

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130264907A1 (en) * 2012-04-05 2013-10-10 Raytheon Company Betavoltaic battery with diamond moderator and related system and method
CN108492905A (en) * 2018-05-28 2018-09-04 吉林大学 A kind of diamond PIM Schottky types β radiation volta effect nuclear battery
CN210223589U (en) * 2018-06-08 2020-03-31 吉林大学 Silicon carbide PIN junction type β radiation volt effect based nuclear battery

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