CN113953122A - Silicon carbide ingot bonding processing equipment and method capable of automatically centering - Google Patents
Silicon carbide ingot bonding processing equipment and method capable of automatically centering Download PDFInfo
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- CN113953122A CN113953122A CN202111585282.2A CN202111585282A CN113953122A CN 113953122 A CN113953122 A CN 113953122A CN 202111585282 A CN202111585282 A CN 202111585282A CN 113953122 A CN113953122 A CN 113953122A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 139
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 135
- 238000012545 processing Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title description 23
- 239000013078 crystal Substances 0.000 claims abstract description 113
- 238000003672 processing method Methods 0.000 claims abstract description 7
- 230000007246 mechanism Effects 0.000 claims description 24
- 238000005507 spraying Methods 0.000 claims description 23
- 239000007921 spray Substances 0.000 claims description 20
- 238000006073 displacement reaction Methods 0.000 claims description 18
- 230000009471 action Effects 0.000 claims description 4
- 238000004364 calculation method Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/04—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B11/00—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding
- F16B11/006—Connecting constructional elements or machine parts by sticking or pressing them together, e.g. cold pressure welding by gluing
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides silicon carbide crystal ingot bonding processing equipment and a silicon carbide crystal ingot bonding processing method capable of automatically centering, and belongs to the technical field of silicon carbide crystal ingot bonding. The invention relates to a silicon carbide crystal ingot bonding processing device capable of automatically centering, which comprises a distance measuring sensor, wherein the distance measuring sensor is used for measuring the center and edge profiles of a silicon carbide crystal ingot after end face grinding and modeling a two-dimensional curve, automatically, quickly and accurately searching the center of the silicon carbide crystal ingot and performing fitting calculation of a circle with a size required by bonding.
Description
Technical Field
The invention discloses a silicon carbide crystal ingot bonding processing device and method capable of automatically centering, and belongs to the technical field of silicon carbide crystal ingot bonding.
Background
The silicon carbide is an important third-generation semiconductor material developed after a first-generation semiconductor Si, a second-generation semiconductor GaAs or InP and the like, has the characteristics of wide forbidden band, high thermal conductivity, high breakdown field strength, high carrier saturation migration rate and the like, has irreplaceable advantages in the aspects of high temperature, high frequency, high power, microelectronic devices and the like and in extreme environment applications such as aerospace, military industry, nuclear energy and the like, and has great application potential.
The method is characterized in that a complete silicon carbide substrate is produced through a plurality of working procedures, the outer diameter grinding of a silicon carbide crystal ingot is an important one of the working procedures, the working procedure determines the axial deviation degree of a finished silicon carbide crystal ingot, the axial deviation degree is an important parameter in the product specification of the silicon carbide crystal ingot, and before the outer diameter grinding of the silicon carbide crystal ingot, the center of the silicon carbide crystal ingot is searched, and an end face boss on a cylindrical grinding machine is adhered to the end face of the silicon carbide crystal ingot by using adhesive wax (glue) so that the end face boss and the silicon carbide crystal ingot have good concentricity.
The existing method for searching the center of the silicon carbide crystal ingot is mainly to place an end surface boss on the end surface of the silicon carbide crystal ingot, then repeatedly measure the distance from the circular edge of the silicon carbide crystal ingot to the outer edge of a tool tightly attached to the end surface of the silicon carbide crystal ingot at different positions by using a vernier caliper, and then slowly correct the end surface boss to the center of the silicon carbide crystal ingot, or bond the sapphire crystal rod and a rod bonding boss by using the method disclosed in the sapphire crystal rod bonding process disclosed in the invention patent with the application publication number of CN104131355A, but the processes have more defects: firstly, because the round edge of the silicon carbide crystal ingot presents an irregular shape before the outer diameter is ground, a method for searching the center of the silicon carbide crystal ingot by using a vernier caliper has a large error, so that the operation is inconvenient, and because end face fixtures are required to be bonded on the upper end face and the lower end face of the silicon carbide crystal ingot, even if related tools are used, the two end face bosses and the upper end face and the lower end face of the silicon carbide crystal ingot are difficult to keep consistent concentricity respectively, when the concentricity deviation is too large, the grinding of the outer diameter of the silicon carbide crystal ingot in the outer diameter grinding process is not uniform, the machine needs to be stopped for multiple times to repeatedly adjust the position of the silicon carbide crystal ingot, and the risk of processing failure is caused, so that the workload and the processing time of workers are greatly increased; secondly, operators can easily collide with the edge of the silicon carbide ingot to cause edge breakage or drop in the process of bonding and adjusting the end face boss, so that the silicon carbide ingot is broken and scrapped, and the waste of resource cost is caused.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide silicon carbide crystal ingot bonding processing equipment and method capable of automatically centering so as to solve the problems in the background technology.
In order to achieve the first object, the invention provides a silicon carbide ingot bonding processing device.
The utility model provides a but carborundum crystal ingot bonding processing equipment of automatic centering, which comprises a machine body, still include the industrial computer, the annular workstation of setting on the machine body, sliding connection is at the telescopic cylinder on the machine body, fixed connection is first fixture on telescopic cylinder, the first bonding tool that links to each other with first fixture, fix the lift module on the machine body, second fixture with lift module fixed connection, install the location flat board on second fixture, the second bonding tool that links to each other with second fixture, range sensor with first fixture fixed connection, the bonding wax-spraying device of setting on the machine body.
Preferably, a positioning round hole is formed in the center of the positioning flat plate, and the second bonding jig is sleeved in the positioning round hole.
Preferably, the positioning plate is detachably mounted on the second clamping mechanism.
Preferably, the distance measuring sensor is one of a TOF depth sensor, a camera, an ultrasonic sensor and an infrared sensor.
Preferably, the device further comprises a needle-shaped bonding wax spray head fixedly connected with the first clamping mechanism, the bonding wax spray head is connected with the bonding wax spraying device, and the tip of the bonding wax spray head is arranged downwards.
Preferably, the device also comprises a horizontal displacement table, and the horizontal displacement table is fixedly connected with the telescopic cylinder and the bonding wax spray head.
Preferably, the industrial computer is connected with telescopic cylinder, first fixture, lifting module, second fixture, range finding sensor and bonding wax spraying device electricity.
In order to achieve the second object, namely, a silicon carbide ingot bonding processing method applicable to the above silicon carbide ingot bonding processing apparatus capable of self-centering, the present invention is achieved by the following technical solution.
A bonding processing method of a silicon carbide crystal ingot capable of automatically centering comprises the following steps:
s1, assembling and checking silicon carbide crystal ingot bonding processing equipment
Assembling and checking silicon carbide crystal ingot bonding processing equipment, setting a bonding program on an industrial personal computer in advance, putting the silicon carbide crystal ingot on a workbench, and preparing for bonding the silicon carbide crystal ingot;
s2, bonding the upper end face of the silicon carbide crystal ingot
Starting an industrial personal computer, measuring the two-dimensional profile and the coordinates of the silicon carbide crystal ingot through a distance measuring sensor, spraying wax on the upper end face of the silicon carbide crystal ingot by utilizing a preset algorithm program in the industrial personal computer, starting a telescopic cylinder and completing the bonding operation of a first bonding jig and the upper end face of the silicon carbide crystal ingot;
s3, bonding the lower end face of the silicon carbide crystal ingot
The telescopic cylinder returns to the original position, and the first bonding jig and the silicon carbide crystal ingot which are bonded together are driven to move upwards; the lifting module drives the second bonding jig to lift and perform wax spraying action on the end face of the second bonding jig, and then the telescopic cylinder is started to drive the silicon carbide ingot to move downwards until the lower end face of the silicon carbide ingot contacts the surface of the second bonding jig and maintains a certain pressure maintaining time, so that the bonding operation of the lower end face of the silicon carbide ingot and the second bonding jig is completed;
s4, taking down the silicon carbide crystal ingot
The first clamping mechanism releases the clamping of the first bonding jig, the telescopic cylinder returns, the second clamping mechanism releases the clamping of the second bonding jig, and the bonding of the silicon carbide crystal ingot is finished.
The invention has the beneficial effects that:
(1) the invention relates to a silicon carbide crystal ingot bonding processing device capable of automatically centering, which comprises a distance measuring sensor, wherein the distance measuring sensor is used for measuring the center and edge profiles of a silicon carbide crystal ingot after end face grinding and modeling a two-dimensional curve, automatically, quickly and accurately searching the center of the silicon carbide crystal ingot and performing fitting calculation of a circle with a size required by bonding.
(2) The invention relates to silicon carbide crystal ingot bonding processing equipment capable of automatically centering, which comprises a horizontal displacement table, an industrial personal computer and a distance measuring sensor, wherein the horizontal displacement table is combined with the industrial personal computer and the distance measuring sensor, the horizontal displacement table can realize the quick and accurate positioning of the end surface of a silicon carbide crystal ingot and the central position of a bonding jig, the end surface bonding efficiency of the silicon carbide crystal ingot and the bonding jig is improved, and the horizontal displacement table can also drive a wax spraying head to move, so that the wax spraying operation of the wax spraying head on a specific end surface according to a self-defined wax spraying track is ensured, and the bonding strength of the end surface of the silicon carbide crystal ingot and the bonding jig is ensured.
(3) The invention relates to silicon carbide crystal ingot bonding processing equipment capable of automatically centering, which comprises a telescopic cylinder and a lifting module, wherein the telescopic cylinder and the lifting module can be matched with other parts to drive a silicon carbide crystal ingot to move up and down, so that the two end surfaces of the silicon carbide crystal ingot are automatically bonded with a first bonding jig and a second bonding jig, the upper end surface and the lower end surface of the silicon carbide crystal ingot are bonded with the bonding jigs, the phenomenon that great errors exist in operation and measurement due to manual operation measurement and irregular round edges of the silicon carbide crystal ingot is avoided, further important parameters of products are influenced, and the bonding efficiency of the silicon carbide crystal ingot is improved.
(4) The invention relates to a silicon carbide crystal ingot bonding processing method capable of automatically centering, which applies an industrial personal computer and sets an automatic program in advance, and operators can realize the automatic bonding of two end surfaces of a silicon carbide crystal ingot with a first bonding jig and a second bonding jig respectively only by placing bonding jigs and the silicon carbide crystal ingot to corresponding positions, thereby solving the problems in the prior art and improving the bonding efficiency and the success rate of the silicon carbide crystal ingot.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic structural view of a self-centering silicon carbide ingot bonding apparatus according to the present invention;
FIG. 2 is a graph showing three wax-spraying traces according to the present invention.
In the figure: 1 board body, 2 industrial computers, 3 workstations, 4 telescopic cylinder, 5 first fixture, 6 first bonding tools, 7 lift modules, 8 second fixture, 9 location flat boards, 10 second bonding tools, 11 range finding sensor, 12 bonding wax injection device, 13 location round holes, 14 bonding wax shower nozzles, 15 horizontal displacement platform, 16 rubber hose.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
Example 1
As shown in fig. 1, a silicon carbide ingot bonding processing device capable of automatically centering, including board body 1, the industrial computer 2, fix annular workstation 3 on board body 1, sliding connection is at the telescopic cylinder 4 on board body 1, fixed connection is at the first fixture 5 on telescopic cylinder 4, the first bonding tool 6 who links to each other with first fixture 5, fix the lift module 7 on board body 1, second fixture 8 with lift module 7 fixed connection, install the dull and stereotyped 9 of location on second fixture 8, the second bonding tool 10 that links to each other with second fixture 8, range sensor 11 with first fixture 5 fixed connection, the bonding wax spray device 12 of setting on board body 1, acicular and with first fixture 5 fixed connection's bonding wax shower nozzle 14, horizontal displacement platform 15.
The industrial personal computer 2 is electrically connected with the telescopic cylinder 4, the first clamping mechanism 5, the lifting module 7, the second clamping mechanism 8, the distance measuring sensor 11 and the bonding wax spraying device 12.
The workbench 3 is fixed on the machine body 1 in a welding or threaded connection manner, and the center of the workbench 3 allows the second bonding jig 10 to pass through, so that the lifting module 7 drives the second bonding jig 10 to move up and down.
A positioning round hole 13 is formed in the center of the positioning flat plate 9, and the second bonding jig 10 is sleeved in the positioning round hole 13; the positioning flat plate 9 is detachably arranged on the second clamping mechanism 8, the positioning flat plate 9 comprises different models, positioning round holes 13 formed in the positioning flat plates 9 of different models are different in size and used for fixing silicon carbide crystal ingots of different sizes, and the silicon carbide crystal ingots are thin plates and are generally 4 inches (phi 100L 20-40 mm) or 6 inches (phi 150L 15-30 mm); in the embodiment, a 4-inch positioning flat plate 9 is selected, and a positioning round hole 13 with the size of 80mm is formed in the positioning flat plate and used for supporting a 4-inch silicon carbide ingot.
The distance measuring sensor 11 is one of a TOF depth sensor, a camera, an ultrasonic sensor and an infrared sensor.
The bonding wax spray head 14 is connected with the bonding wax spray device 12 through a rubber hose 16, and the tip of the bonding wax spray head 14 faces downwards.
The horizontal displacement table 15 is fixedly connected with the telescopic cylinder 4 and the bonding wax spray head 14.
Example 2
Different from embodiment 1, the groove of putting up of halfpace form can be opened in the center department of board body 1, workstation 3 is fixed on board body 1 with the mode of putting, be convenient for lifting module 7 drives second bonding tool 10 and sees through workstation 3 and reciprocates, and can change not unidimensional workstation 3 according to the size of carborundum ingot, workstation 3 makes the carborundum ingot of not unidimensional steadily put on board body 1, select 6 cun location flat board 9 in this embodiment, the size of the location round hole 13 of seting up on it is 130mm, a carborundum ingot for support 6 cun.
The first clamping mechanism 5 and the second clamping mechanism 8 are centering type chucks, which can be pneumatic three-jaw or four-jaw chucks, and are used for clamping the tail ends of the first bonding jig 6 or the second bonding jig 10.
The telescopic cylinder 4 and the lifting module 7 are cylinders provided with electromagnetic valves and delay valves, and the compressed air content and the pressure value in the cylinders can be controlled by the industrial personal computer 2 respectively.
Example 3
A bonding processing method of silicon carbide crystal ingots capable of automatically centering adopts the device in the embodiment 2, and comprises the following steps:
s1, assembling and checking silicon carbide crystal ingot bonding processing equipment
S11, checking whether the telescopic cylinder 4, the first clamping mechanism 5, the lifting module 7 and the second clamping mechanism 8 normally operate or not;
s12, fixing the first bonding jig 6 and the first clamping mechanism 5, namely fixing the first bonding jig 6 and the telescopic cylinder 4;
s13, selecting a 6-inch positioning flat plate 9 to be installed on a second clamping mechanism 8, sleeving the end part of a second bonding jig 10 in a positioning round hole 13 to fix the center of the second bonding jig 10, and clamping the second bonding jig 10 by using the second clamping mechanism 8;
s14, checking whether the silicon carbide ingot bonding processing equipment normally operates or not, wherein the parts to be checked specifically comprise a distance measuring sensor 11, a bonding wax spraying device 12, a bonding wax spraying nozzle 14 and a horizontal displacement table 15;
s15, setting a bonding program on the industrial personal computer 2 in advance
The bonding procedure includes: (1) predetermined origin of coordinates (X)0,Y0) And coordinate axes, which are automatically reset after the industrial personal computer 2 is operated to start up each time; (2) presetting fitting circle sizes of 4-inch and 6-inch silicon carbide crystal ingots, and setting a program for manually inputting the fitting circle sizes; (3) presetting adjustable modes of compressed air content and pressure values of cylinders in the telescopic cylinder 4 and the lifting module 7, and controlling the reciprocating motion of the telescopic cylinder 4 and the lifting module 7 in the silicon carbide crystal ingot bonding operation; (4) presetting three wax spraying track curves, namely a spiral curve, a point coating curve and a straight coating curve; (5) presetting or setting the type and related physicochemical properties of the manually input bonding wax, and automatically judging the selection of a wax spraying track curve, the corresponding line spacing or point spacing, the moving speed of the bonding wax spray head 14, the wax spraying coverage area and other related parameters by a setting program according to the type of the bonding wax;
s16, putting the silicon carbide crystal ingot on a workbench 3;
s2, bonding the upper end face of the silicon carbide crystal ingot
S21, defining that the telescopic cylinder 4 and the lifting module 7 are end ends when extending to the farthest end in a reciprocating motion manner, and classifying the telescopic cylinder 4 and the lifting module 7 as the ends when compressing to the minimum value in the reciprocating motion manner; starting the industrial personal computer 2, ensuring that the telescopic cylinder 4 is positioned at the resetting end, and ensuring that the first bonding jig 6 is not contacted with the upper end surface of the silicon carbide crystal ingot;
s22, the industrial personal computer 2 drives the distance measuring sensor 11 to move by controlling the horizontal displacement table 15 to move, and the distance measuring sensor 11 scans the silicon carbide crystal ingot to obtain a two-dimensional profile and profile coordinates of the silicon carbide crystal ingot;
s23, calculating coordinates (X) at the center of a fitting circle by utilizing a preset algorithm program in the industrial personal computer 2 and a scanning junction of the silicon carbide crystal ingotA,YA）；
S24, the industrial personal computer 2 drives the bonding wax spray head 14 to move by controlling the horizontal displacement platform 15, so that wax spraying action is carried out on the upper end face of the silicon carbide crystal ingot, and as the center of the telescopic cylinder 4 and the tip of the bonding wax spray head 14 have a certain relative distance, when the center of the telescopic cylinder 4 is coincided with the circle center of the silicon carbide crystal ingot, two coordinates are simultaneously recorded as (X)A,YA) The difference in the relative distance between the sticking wax nozzle 14 and the center of the telescopic cylinder 4 is (D)X,DY) The center value of the trace coverage circle of the wax jetting head 14 is (X)A+DX,YA+DY) The wax spraying trace curve is shown in fig. 2, wherein a is a spiral curve, b is a point coating curve, and c is a straight coating curve;
s25, the industrial personal computer 2 controls the horizontal displacement table 15 to drive the first bonding jig 6 to move, the center of the first bonding jig 6 is overlapped with the circle center of the silicon carbide crystal ingot, the telescopic cylinder 4 is started, the telescopic cylinder 4 drives the first bonding jig 6 to move downwards until the first bonding jig contacts with the upper end face of the silicon carbide crystal ingot and stops moving, the pressure value in the telescopic cylinder 4 reaches the maximum value at the moment, the delay valve is started, the pressure maintaining process is started, the pressure maintaining time is controlled within the range of 15-40min by controlling the delay valve, and the first bonding jig 6 is guaranteed to be bonded with the upper end face of the silicon carbide crystal ingot;
s3, bonding the lower end face of the silicon carbide crystal ingot
S31, the industrial personal computer 2 controls the telescopic cylinder 4 to do compression movement to drive the first bonding jig 6 to move upwards synchronously with the silicon carbide crystal ingot, so that the silicon carbide crystal ingot is not contacted with the workbench 3;
s32, the industrial personal computer 2 controls the lifting module 7 to drive the second bonding jig 10 to lift until the bonding wax sprayed by the bonding wax spray head 14 can be stably attached to the upper end face of the second bonding jig 10;
s33, the industrial personal computer 2 controls the horizontal displacement table 15 to move to further drive the bonding wax spray head 14 to move, the bonding wax spray head 14 conducts wax spraying action on the upper surface of the second bonding jig 10, the motion track of the bonding wax spray head 14 is obtained through comprehensive calculation according to a preset algorithm program in the industrial personal computer 2, the scanning result of the silicon carbide crystal ingot and a preselected wax spraying track curve, and the track curve coordinate of the bonding wax spray head 14 in the step S24 is (X) shown in the specificationA+DX,YA+DY) The same;
s34, the industrial personal computer 2 controls the horizontal displacement table 15 to move to drive the first bonding jig 6 and the silicon carbide crystal ingot to move synchronously, so that the circle center of the silicon carbide crystal ingot is superposed with the center of the second bonding jig 10;
s35, the industrial personal computer 2 controls the telescopic cylinder 4 to move, the telescopic cylinder 4 drives the silicon carbide crystal ingot to move downwards until the lower end face of the silicon carbide crystal ingot contacts the upper surface of the second bonding jig 10, the delay valve is started to start the pressure maintaining process, the pressure maintaining time is controlled within the range of 15-40min by controlling the delay valve, and the lower end face of the silicon carbide crystal ingot is guaranteed to be bonded with the second bonding jig 10;
s4, taking down the silicon carbide crystal ingot
S41, the first clamping mechanism 5 releases clamping of the first bonding jig 6, and the telescopic cylinder 4 returns;
s42, the second clamping mechanism 8 releases clamping of the second bonding jig 10, and the lifting module 7 returns;
s43, the first bonding jig 6, the silicon carbide crystal ingot and the second bonding jig 10 bonded together are taken down, and bonding of the silicon carbide crystal ingot is finished.
Comparative example 1
The sapphire ingot is bonded with a bonding bar boss by adopting the method disclosed in the invention patent with application publication number CN104131355A, and the method is used as a comparison of example 3.
Test example 1
To further verify the high efficiency of the silicon carbide ingot bonding method according to the present invention, the silicon carbide ingot bonding effects of example 3 and comparative example 1 were compared, and the roundness error of the ground silicon carbide ingot was measured, and the difficulty of detaching the silicon carbide ingot from the two bonding jigs was evaluated, and the results of the measurement of the roundness error and the difficulty of detaching the bonding jigs are shown in table 1.
TABLE 1 silicon carbide ingot bonding process effect
| Roundness error (mm) | Difficulty of disassembly | |
| Example 3 (parallel 1) | 0.037mm | Easy to use |
| Example 3 (parallel 2) | 0.031mm | Easy to use |
| Example 3 (parallel 3) | 0.034mm | Easy to use |
| COMPARATIVE EXAMPLE 1 (PARALLEL 1) | 0.23mm | Difficulty in |
| COMPARATIVE EXAMPLE 1 (PARALLEL 2) | 0.31mm | Difficulty in |
| COMPARATIVE EXAMPLE 1 (PARALLEL 3) | 0.29mm | Difficulty in |
From the specific evaluation and the above table it can be seen that: in comparative example 1, the roundness error of the sapphire crystal bar after drilling is in the range of 0.2mm to 0.4mm, when the error value is small, the disassembly difficulty of the sapphire crystal bar and the boss of the sticking bar is very large, further the boss of the sticking bar is seriously abraded on the surface after being used for several times, when the roundness error is large, the concentricity error which is described by the boss of the sticking bar and is less than or equal to 0.04mm cannot be caused, and the conditions that the gluing of the boss of the sticking bar is not uniform, the boss of the sticking bar is not firmly bonded with the sapphire crystal bar, redundant glue is extruded to the clearance between the sapphire crystal bar and the boss of the sticking bar when a pure aluminum pressure head is pressed down are caused no matter the roundness error, and the subsequent grinding effect of the sapphire crystal bar is poor or the boss of the sticking bar cannot be separated from the following conditions and the like: when the silicon carbide crystal ingot bonding processing method is adopted, the roundness error of the silicon carbide crystal ingot is below 0.02mm, the clamping error of the centering chucks of the first clamping mechanism 5 and the second clamping mechanism 8 is within 0.01mm, the error of the horizontal displacement table 15 is within 0.01mm, the roundness error of the assembled silicon carbide crystal ingot is integrally controlled to be below 0.04mm, rigid assembly does not exist in the whole process, the assembly and disassembly are simple and easy to implement, the precision of each component can be further ensured, the error after the assembly is ensured to be within a controllable range, and the bonding efficiency and the success rate of the silicon carbide crystal ingot are improved.
While there have been shown and described what are at present considered the fundamental principles and essential features of the invention and its advantages, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (8)
1. The utility model provides a but silicon carbide ingot bonding processing equipment of self-centering, includes board body (1), its characterized in that: still include industrial computer (2), annular workstation (3) of setting on board body (1), sliding connection telescopic cylinder (4) on board body (1), first fixture (5) of fixed connection on telescopic cylinder (4), first bonding tool (6) that link to each other with first fixture (5), lifting module (7) of fixing on board body (1), second fixture (8) with lifting module (7) fixed connection, install location flat board (9) on second fixture (8), second bonding tool (10) that link to each other with second fixture (8), range finding sensor (11) with first fixture (5) fixed connection, bonding wax spray device (12) of setting on board body (1).
2. A self-centering silicon carbide ingot bonding apparatus as claimed in claim 1, wherein: a positioning round hole (13) is formed in the center of the positioning flat plate (9), and the second bonding jig (10) is sleeved in the positioning round hole (13).
3. A self-centering silicon carbide ingot bonding apparatus as claimed in claim 2, wherein: the positioning flat plate (9) is detachably arranged on the second clamping mechanism (8).
4. A self-centering silicon carbide ingot bonding apparatus as claimed in claim 3, wherein: the distance measuring sensor (11) is one of a TOF depth of field sensor, a camera, an ultrasonic sensor and an infrared sensor.
5. The self-centering silicon carbide ingot bonding processing apparatus as claimed in claim 4, wherein: the wax sprayer is characterized by further comprising a needle-shaped bonding wax sprayer (14) fixedly connected with the first clamping mechanism (5), wherein the bonding wax sprayer (14) is connected with the bonding wax spraying device (12), and the tip of the bonding wax sprayer (14) faces downwards.
6. The self-centering silicon carbide ingot bonding processing apparatus as claimed in claim 5, wherein: the device also comprises a horizontal displacement table (15), wherein the horizontal displacement table (15) is fixedly connected with the telescopic cylinder (4) and the bonding wax spray head (14).
7. The self-centering silicon carbide ingot bonding processing apparatus as claimed in claim 6, wherein: the industrial personal computer (2) is electrically connected with the telescopic cylinder (4), the first clamping mechanism (5), the lifting module (7), the second clamping mechanism (8), the ranging sensor (11) and the bonding wax spraying device (12).
8. A silicon carbide ingot bonding processing method capable of self-centering, using the silicon carbide ingot bonding processing apparatus capable of self-centering according to any one of claims 1 to 7, characterized by comprising the steps of:
s1, assembling and checking silicon carbide crystal ingot bonding processing equipment
Assembling and checking silicon carbide crystal ingot bonding processing equipment, setting a bonding program on an industrial personal computer (2) in advance, putting the silicon carbide crystal ingot on a workbench (3) and preparing to bond the silicon carbide crystal ingot;
s2, bonding the upper end face of the silicon carbide crystal ingot
Starting an industrial personal computer (2), measuring the two-dimensional profile and the coordinates of the silicon carbide crystal ingot through a ranging sensor (11), performing wax spraying action on the upper end face of the silicon carbide crystal ingot by utilizing a preset algorithm program in the industrial personal computer (2), starting a telescopic cylinder (4) and completing the bonding operation of a first bonding jig (6) and the upper end face of the silicon carbide crystal ingot;
s3, bonding the lower end face of the silicon carbide crystal ingot
The telescopic cylinder (4) returns to the original position, and the first bonding jig (6) and the silicon carbide crystal ingot which are bonded together are driven to move upwards; the lifting module (7) drives the second bonding jig (10) to lift and spray wax on the end face of the second bonding jig (10), then the telescopic cylinder (4) is started to drive the silicon carbide crystal ingot to move downwards until the lower end face of the silicon carbide crystal ingot contacts the surface of the second bonding jig (10) and maintains a certain pressure maintaining time, and bonding operation between the lower end face of the silicon carbide crystal ingot and the second bonding jig (10) is completed;
s4, taking down the silicon carbide crystal ingot
The first clamping mechanism (5) releases the clamping of the first bonding jig (6), the telescopic cylinder (4) returns to the original position, the second clamping mechanism (8) releases the clamping of the second bonding jig (10), and the bonding of the silicon carbide crystal ingot is finished.
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Citations (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4474306A (en) * | 1982-10-29 | 1984-10-02 | Fuji Photo Film Co., Ltd. | Positioning and bonding method |
| WO2009101761A1 (en) * | 2008-02-15 | 2009-08-20 | Shin-Etsu Handotai Co., Ltd. | Cylindrical grinding equipment and grinding method |
| CN104131355A (en) * | 2014-07-28 | 2014-11-05 | 江苏吉星新材料有限公司 | Sapphire crystal rod sticking technology and device |
| CN204300063U (en) * | 2014-12-03 | 2015-04-29 | 衢州飞瑞特种陶瓷有限公司 | A kind of ceramic plunger bonding frame |
| JP2016127051A (en) * | 2014-12-26 | 2016-07-11 | 新日鐵住金株式会社 | Side face processing method of silicon carbide single crystal ingot |
| CN106064425A (en) * | 2015-04-15 | 2016-11-02 | 株式会社迪思科 | The generation method of wafer |
| CN106392322A (en) * | 2016-05-30 | 2017-02-15 | 安徽柯力电气制造有限公司 | Full-automatic patch gluing device |
| CN206368217U (en) * | 2016-12-29 | 2017-08-01 | 山东天岳先进材料科技有限公司 | A kind of stable suspension device for long crystal furnace |
| CN107327452A (en) * | 2017-06-28 | 2017-11-07 | 中国航发南方工业有限公司 | Shaft coupling bonding apparatus |
| CN107597504A (en) * | 2017-10-27 | 2018-01-19 | 中国科学院上海光学精密机械研究所 | Optical element original position automatic dispensing device and dispensing method |
| CN107682593A (en) * | 2016-08-02 | 2018-02-09 | 宁波舜宇光电信息有限公司 | It is double to take the photograph module assembling apparatus |
| TWI615515B (en) * | 2016-11-14 | 2018-02-21 | 友達晶材股份有限公司 | An upright ingot bonding system and method thereof |
| CN207139628U (en) * | 2017-09-16 | 2018-03-27 | 哈尔滨奥瑞德光电技术有限公司 | A kind of sapphire ingot centering clamp |
| CN108311340A (en) * | 2018-02-01 | 2018-07-24 | 普洛赛斯（苏州）智能装备有限公司 | A kind of manipulator control system and its working method for dispensing coating machine |
| CN108637833A (en) * | 2018-07-02 | 2018-10-12 | 哈尔滨奥瑞德光电技术有限公司 | A kind of combination unit for sapphire ingot automatic chamfering |
| CN109253137A (en) * | 2018-09-18 | 2019-01-22 | 合肥鸿坤通信工程有限公司 | A kind of filter disc location structure based on optic communication |
| US20190148164A1 (en) * | 2017-11-16 | 2019-05-16 | Disco Corporation | Wafer producing method and wafer producing apparatus |
| CN209256513U (en) * | 2018-12-19 | 2019-08-16 | 云南蓝晶科技有限公司 | Large-size sapphire crystal bar outer circle Precision Machining vertical machine |
| CN209890762U (en) * | 2019-01-30 | 2020-01-03 | 无锡中环应用材料有限公司 | Automatic stick sticking machine |
| CN210106422U (en) * | 2019-06-26 | 2020-02-21 | 苏州优晶光电科技有限公司 | Graphite sleeve shaft |
| CN111029292A (en) * | 2019-12-25 | 2020-04-17 | 山东天岳先进材料科技有限公司 | Bonding and separating device and method for crystal ingot |
| CN111055184A (en) * | 2019-12-31 | 2020-04-24 | 重庆市耀城玻璃制品有限公司 | Round glass polishing control system and method |
| CN210715909U (en) * | 2019-11-05 | 2020-06-09 | 台州艾特密封科技股份有限公司 | Self-lubricating sealing gasket convenient for double-side coating |
| CN111347348A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal centering and clamping device |
| CN111347347A (en) * | 2020-03-23 | 2020-06-30 | 哈尔滨奥瑞德光电技术有限公司 | Be used for sapphire crystal bar centering support |
| CN211890105U (en) * | 2020-03-26 | 2020-11-10 | 山西烁科晶体有限公司 | Bonding tool before rounding of silicon carbide ingot |
| CN212496826U (en) * | 2020-05-05 | 2021-02-09 | 福州紫凤光电科技有限公司 | Small-size pole crystal rounding burnishing machine |
-
2021
- 2021-12-23 CN CN202111585282.2A patent/CN113953122B/en active Active
Patent Citations (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4474306A (en) * | 1982-10-29 | 1984-10-02 | Fuji Photo Film Co., Ltd. | Positioning and bonding method |
| WO2009101761A1 (en) * | 2008-02-15 | 2009-08-20 | Shin-Etsu Handotai Co., Ltd. | Cylindrical grinding equipment and grinding method |
| CN101945732A (en) * | 2008-02-15 | 2011-01-12 | 信越半导体股份有限公司 | Cylindrical grinding apparatus and method for grinding |
| CN104131355A (en) * | 2014-07-28 | 2014-11-05 | 江苏吉星新材料有限公司 | Sapphire crystal rod sticking technology and device |
| CN204300063U (en) * | 2014-12-03 | 2015-04-29 | 衢州飞瑞特种陶瓷有限公司 | A kind of ceramic plunger bonding frame |
| JP2016127051A (en) * | 2014-12-26 | 2016-07-11 | 新日鐵住金株式会社 | Side face processing method of silicon carbide single crystal ingot |
| CN106064425A (en) * | 2015-04-15 | 2016-11-02 | 株式会社迪思科 | The generation method of wafer |
| CN106392322A (en) * | 2016-05-30 | 2017-02-15 | 安徽柯力电气制造有限公司 | Full-automatic patch gluing device |
| CN107682593A (en) * | 2016-08-02 | 2018-02-09 | 宁波舜宇光电信息有限公司 | It is double to take the photograph module assembling apparatus |
| TWI615515B (en) * | 2016-11-14 | 2018-02-21 | 友達晶材股份有限公司 | An upright ingot bonding system and method thereof |
| CN206368217U (en) * | 2016-12-29 | 2017-08-01 | 山东天岳先进材料科技有限公司 | A kind of stable suspension device for long crystal furnace |
| CN107327452A (en) * | 2017-06-28 | 2017-11-07 | 中国航发南方工业有限公司 | Shaft coupling bonding apparatus |
| CN207139628U (en) * | 2017-09-16 | 2018-03-27 | 哈尔滨奥瑞德光电技术有限公司 | A kind of sapphire ingot centering clamp |
| CN107597504A (en) * | 2017-10-27 | 2018-01-19 | 中国科学院上海光学精密机械研究所 | Optical element original position automatic dispensing device and dispensing method |
| US20190148164A1 (en) * | 2017-11-16 | 2019-05-16 | Disco Corporation | Wafer producing method and wafer producing apparatus |
| CN108311340A (en) * | 2018-02-01 | 2018-07-24 | 普洛赛斯（苏州）智能装备有限公司 | A kind of manipulator control system and its working method for dispensing coating machine |
| CN108637833A (en) * | 2018-07-02 | 2018-10-12 | 哈尔滨奥瑞德光电技术有限公司 | A kind of combination unit for sapphire ingot automatic chamfering |
| CN109253137A (en) * | 2018-09-18 | 2019-01-22 | 合肥鸿坤通信工程有限公司 | A kind of filter disc location structure based on optic communication |
| CN209256513U (en) * | 2018-12-19 | 2019-08-16 | 云南蓝晶科技有限公司 | Large-size sapphire crystal bar outer circle Precision Machining vertical machine |
| CN209890762U (en) * | 2019-01-30 | 2020-01-03 | 无锡中环应用材料有限公司 | Automatic stick sticking machine |
| CN210106422U (en) * | 2019-06-26 | 2020-02-21 | 苏州优晶光电科技有限公司 | Graphite sleeve shaft |
| CN210715909U (en) * | 2019-11-05 | 2020-06-09 | 台州艾特密封科技股份有限公司 | Self-lubricating sealing gasket convenient for double-side coating |
| CN111029292A (en) * | 2019-12-25 | 2020-04-17 | 山东天岳先进材料科技有限公司 | Bonding and separating device and method for crystal ingot |
| CN111055184A (en) * | 2019-12-31 | 2020-04-24 | 重庆市耀城玻璃制品有限公司 | Round glass polishing control system and method |
| CN111347347A (en) * | 2020-03-23 | 2020-06-30 | 哈尔滨奥瑞德光电技术有限公司 | Be used for sapphire crystal bar centering support |
| CN211890105U (en) * | 2020-03-26 | 2020-11-10 | 山西烁科晶体有限公司 | Bonding tool before rounding of silicon carbide ingot |
| CN111347348A (en) * | 2020-03-30 | 2020-06-30 | 福建北电新材料科技有限公司 | Crystal centering and clamping device |
| CN212496826U (en) * | 2020-05-05 | 2021-02-09 | 福州紫凤光电科技有限公司 | Small-size pole crystal rounding burnishing machine |
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