CN113948964A - Active semiconductor optical frequency comb laser and light emission chip - Google Patents
Active semiconductor optical frequency comb laser and light emission chip Download PDFInfo
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- CN113948964A CN113948964A CN202111196075.8A CN202111196075A CN113948964A CN 113948964 A CN113948964 A CN 113948964A CN 202111196075 A CN202111196075 A CN 202111196075A CN 113948964 A CN113948964 A CN 113948964A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04J—MULTIPLEX COMMUNICATION
- H04J14/00—Optical multiplex systems
- H04J14/02—Wavelength-division multiplex systems
- H04J14/0201—Add-and-drop multiplexing
- H04J14/0202—Arrangements therefor
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
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Abstract
An active semiconductor optical-frequency comb laser comprising: a gain section which is a ridge waveguide type semiconductor laser; a saturable absorber having the same shape as the gain section structure and no greater size than the gain section; the electric isolation part is distributed between the gain part and the saturable absorber, and an electric isolation cut is formed between the gain part and the saturable absorber; wherein the gain section and the saturable absorber have a plurality of segments connected by the electrically isolated section. According to the active semiconductor optical frequency comb laser and the light emitting chip, the high-order mode-locked laser is adopted to pass through the multi-section gain area, high-order mode locking at frequency comb intervals of more than 100GHz can be achieved through the long-cavity semiconductor mode-locked laser, and meanwhile, the wide comb tooth distance, flat topping and high-bandwidth optical frequency comb laser are finally achieved by utilizing the high-bandwidth advantage of non-uniform broadening of quantum dots.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of photoelectrons, in particular to an active semiconductor optical frequency comb laser and an optical emission chip.
[ background of the invention ]
The internet technology developed at a high speed brings massive data to be stored and transmitted, and accordingly higher requirements are put on bandwidth of optical communication and data centers. Compared with the coherent communication technology for long-distance transmission, the wavelength division multiplexing technology has the characteristics of high bandwidth and low cost. However, most of the current technologies are 4-wave CWDM \ DWDM technologies, and future co-package technologies will adopt 8-channel or even 16-channel wavelength division multiplexing. The increased number of channels requires 8 or more semiconductor lasers of different wavelengths per optical module, which presents significant challenges to both chip cost and module power consumption.
Therefore, if a single laser can output multiple wavelengths, the problems of multiple wavelengths and module power consumption can be solved. The quantum dot laser can be used for manufacturing a mode-locked laser to generate a frequency comb, however, if the quantum dot laser is used for replacing a high-speed laser array, the laser itself is required to generate an optical frequency comb (greater than 50GHz) with large frequency interval, and the two-section mode-locked laser with the traditional design is difficult to generate frequency comb laser with wide comb tooth distance. At present, wavelength division multiplexing adopts a plurality of laser chips with different wavelengths to assemble a light emitting component in a packaging mode, and due to the problem of the yield of the lasers, the manufacturing cost of the light emitting component is greatly increased by the plurality of lasers with different stable wavelengths.
[ summary of the invention ]
The invention aims to provide an active semiconductor optical frequency comb laser and an optical transmitting chip which are low in cost and power consumption and easy to use.
The purpose of the invention is realized by the following technical scheme:
an active semiconductor optical-frequency comb laser comprising:
an active semiconductor optical-frequency comb laser comprising:
a gain section which is a ridge waveguide type semiconductor laser;
a saturable absorber having the same shape as the gain section structure and no greater size than the gain section;
the electric isolation part is distributed between the gain part and the saturable absorber, and an electric isolation cut is formed between the gain part and the saturable absorber;
wherein the gain section and the saturable absorber have a plurality of segments connected by the electrically isolated section.
In one embodiment, the gain part forms N-order mode locking by equally dividing the total cavity length of the laser into N sections, the N sections of the gain part are connected through N-1 sections of the saturable absorber, and each section of the gain part accounts for 1/N of the total cavity length of the active semiconductor optical frequency comb laser.
In one embodiment, N is 4.
In one embodiment, the gain section is a quantum dot laser gain.
In one embodiment, the active layer in the gain section is comprised of a quantum dot material.
In one embodiment, the electrically isolated portion is formed by ion implantation or etching.
In one embodiment, the back end of the active semiconductor optical frequency comb laser is provided with a distributed Bragg reflection grating.
In one embodiment, the outlet end of the active semiconductor optical frequency comb laser is provided with a semiconductor optical amplifier.
A light emitting chip comprising an active semiconductor optical frequency comb laser as claimed in any one of the preceding claims.
In one embodiment, the active semiconductor optical frequency comb laser generates laser light:
sequentially passes through a demultiplexer and a modulator array and is output through a multiplexer or an optical fiber array;
or, the modulated wavelengths are coupled and output through the shared waveguide sequentially through the micro-ring modulator array.
Compared with the prior art, the invention has the following beneficial effects: according to the active semiconductor optical frequency comb laser and the light emitting chip, the high-order mode-locked laser is adopted to pass through a multi-section gain area, high-order mode locking at frequency comb intervals of more than 100GHz can be achieved through the long-cavity semiconductor mode-locked laser, and meanwhile, the wide comb tooth distance, flat topping and high-bandwidth optical frequency comb laser are finally achieved by utilizing the high-bandwidth advantage of non-uniform broadening of quantum dots; according to the active semiconductor optical frequency comb laser provided by the invention, a multi-wavelength light source can be generated only by one frequency comb laser, and the comb tooth distance of the frequency comb can reach more than 100G, so that the future commercial requirement is met; in addition, the power of the optical frequency comb of the quantum dot laser can be further improved through the on-chip integration DBR and SOA technology, and a high-power frequency comb light source with a wide frequency comb distance can be realized; the corresponding light emitting chip has the advantages of low cost and power consumption.
[ description of the drawings ]
FIG. 1 is a top view of an active semiconductor optical comb laser according to the present invention;
FIG. 2 is a schematic diagram of an embodiment of an active semiconductor optical comb laser according to the present invention;
FIG. 3 is a schematic diagram of another embodiment of an active semiconductor optical comb laser in accordance with the present invention;
FIG. 4 is a schematic diagram of an embodiment of a light emitting chip in the present invention;
fig. 5 is a schematic view of another embodiment of the light emitting chip of the present invention.
[ detailed description ] embodiments
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be considered limiting of the scope of the present application. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention of the present application, the meaning of "a plurality" is two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art through specific situations.
FIG. 1 is a top view of an active semiconductor optical comb laser according to the present invention; FIG. 2 is a schematic diagram of an embodiment of an active semiconductor optical comb laser according to the present invention; FIG. 3 is a schematic diagram of another embodiment of an active semiconductor optical comb laser in accordance with the present invention; FIG. 4 is a schematic diagram of an embodiment of a light emitting chip in the present invention; FIG. 5 is a schematic view of another embodiment of a light emitting chip according to the present invention
Referring to fig. 1, an active semiconductor optical frequency comb laser includes: gain section 20, saturable absorber 30, electrically isolated section. The gain section 20 is a ridge waveguide semiconductor laser, and preferably, an InAs quantum dot laser structure may be employed to improve the broad spectral performance of the mode-locked laser. The saturable absorber 30 has the same structure shape and size as the gain section 20, and is not larger than the gain section, specifically, the saturable absorber 30 has the same structure as the gain section 20, but the length of the saturable absorber 30 is designed not to exceed the length of the gain section 20, and preferably, the length of the saturable absorber 30 is designed to be 5% -20% of the length of the gain section 20. The electrical isolation section is distributed between the gain section 20 and the saturable absorber 30, and an electrical isolation cut-off 40 is formed between the gain section 20 and the saturable absorber 30, and the electrical isolation cut-off 40 is used for ensuring an electrical isolation effect. Wherein the gain section 20 and the saturable absorber 30 have several segments connected to each other by electrically isolated portions. The structure of the embodiment forms the multi-section gain part 20 and the saturable absorber 30, and can realize high-power and wide-comb-tooth-distance high-order mode-locked laser output.
In one embodiment, the gain sections 20 are N-order mode locked by equally dividing the total laser cavity length by N segments, the N-segment gain sections 20 are connected by N-1 segment saturable absorbers 30, and each segment gain section 20 occupies 1/N (N is N) of the total cavity length of the active semiconductor optical comb laser. Preferably, N is 4 (four), i.e., four-order mode locking is employed. If the total cavity length of the optical frequency comb laser is L, each section of the gain part 20 occupies 1/n of the total cavity length of the active semiconductor optical frequency comb laser, namely the length is 1/nL, so as to finally form the n-order quantum dot optical frequency comb laser. Each section of gain section 20 occupies 1/4 of the total cavity length of the active semiconductor optical frequency comb laser, thus forming a fourth order quantum dot optical frequency comb laser.
In one embodiment, the gain section 20 is a quantum dot laser gain. Due to the non-uniform broadening characteristic of the quantum dots, the gain of the laser with wider gain, smaller fluctuation and larger power is realized by using the quantum dot laser.
In one of the embodiments, the active layer in the gain section 20 is composed of quantum dot material. Quantum dots are an important low-dimensional semiconductor material, and the size of each of the three dimensions is not larger than twice the exciton bohr radius of the corresponding semiconductor material. Quantum dots are generally spherical or spheroidal, often with diameters between 2-20 nm. Common quantum dots are composed of IV, II-VI, IV-VI or III-V elements. Specific examples are silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, indium arsenide quantum dots, and the like. The quantum dot material in this embodiment preferably adopts indium gallium arsenide (InGaAs)/indium arsenide (InAs) material, and the active layer is formed by the InGaAs/InAs material and the corresponding pad structure.
The high-order mode-locked laser is manufactured by using quantum dot materials to generate the optical frequency comb with the frequency comb interval larger than 100GHz, and the optical frequency comb is integrated with a passive filter or a micro-ring modulator array, so that the modulation rate of a single channel above 100GHz can be met, and Tb-level light emission is realized. The output power of the frequency comb laser can be further improved by integrating DBR feedback and a Semiconductor Optical Amplifier (SOA) on a chip, and the frequency comb laser can be used as an ideal frequency comb light source in a future wavelength division multiplexing system.
In one embodiment, the electrically isolated portion is formed by ion implantation or etching. Knocking out atoms or molecules in the material by ion implantation to form electrically isolated portions; etching removes the portion of the material to be removed by etching to form the electrically isolated portion. In the present embodiment, the material to be ion-implanted or etched is the gain section 20 described above; the ion implantation or etching, respectively, terminates above the active region material. .
Referring to fig. 2, in one embodiment, a Distributed Bragg Reflector (DBR) grating 50 is disposed at the back end of the active semiconductor optical comb laser. The distributed Bragg reflection grating 50 is integrated at a single end of the laser to form a band-pass filter, and the wavelength with the required bandwidth is subjected to mode selection, so that the overall power output of the laser is improved. Referring to fig. 3, further, the output end (emitting end) of the active semiconductor optical comb laser is provided with a semiconductor optical amplifier 60 (SOA). The method comprises the steps of integrating a semiconductor optical amplifier at the outlet end of a laser on the basis of an integrated DBR (distributed bragg reflector), further improving the light output power, integrating DBRs at two ends of a device before entering the SOA due to the fact that the SOA changes the cavity length of the whole device, integrating SOA parts on a light output chip, and designing an output light waveguide with an angle to reduce the reflectivity, wherein the general angle is 5-9 degrees. Meanwhile, an antireflection film needs to be further deposited on the light-emitting end face so as to further reduce the influence of external reflection on the laser.
In one embodiment, the active semiconductor optical frequency comb laser is mainly used for high-bandwidth optical transceiver modules based on wavelength division multiplexing and optical interconnection chips. Optical interconnection mainly refers to data transmission inside a chip, among chips and between boards through light such as laser, and has the advantages of high band and low energy consumption compared with the traditional electrical interconnection.
The embodiment of the invention also discloses a light emitting chip, which comprises the active semiconductor optical frequency comb laser 1 as a laser source of the chip.
Referring to fig. 4, in one embodiment, the laser generated by the active semiconductor optical comb laser 1 passes through a demultiplexer 2(deMUX) and a modulator array 3 in sequence, and is output through a multiplexer 4(MUX) or an optical fiber array. The optical frequency comb generated by the quantum dot frequency comb laser is divided into multiple wavelength channels through a demultiplexer (deMUX), each channel is modulated by a modulator array 3, and the multiple wavelength channels are multiplexed and output through a multiplexer 4; meanwhile, the transmission can be carried out by the optical fiber array without integrating the MUX. Both methods can realize a high-bandwidth transmitting chip with low power consumption and low cost. Referring to fig. 5, or another structure is adopted, that is, laser generated by the active semiconductor optical frequency comb laser 1 passes through the micro-ring modulator array 5 in sequence, and the modulated wavelength is coupled and output through the shared waveguide. The wavelength can be modulated while multiplexing/demultiplexing the wavelength by the micro-ring modulator array 5. The quantum dot frequency comb laser can be used at the transmitting end to generate multi-wavelength laser, each wavelength laser is modulated through the micro-ring modulator array 5, and the modulated wavelength is coupled and output through a shared waveguide to form the light emitter. And the multi-wavelength signal can be demultiplexed at the receiving end by utilizing the filtering function of the micro-ring and received by the photoelectric detector array 6, thereby completing the function of the receiver. The micro-ring modulator array 5, the demultiplexer 2 and the photodetector array 6 can be integrated by silicon optical technology, so that an integrated transceiver chip with high speed, high density, high bandwidth and low cost is realized.
The invention can realize high-power and wide comb tooth distance high-order mode-locked laser output by constructing a multi-section gain and saturable absorber, thereby meeting the index requirements of a wavelength division multiplexing system on a multi-wavelength laser. Meanwhile, the quantum dot laser has the non-uniform broadening characteristic, the spectral output with large bandwidth can be realized, and in addition, the quantum dots can optimize the dispersion factor through the growth structure, so that the optical frequency comb output with wide flat top can be realized through optimizing dispersion compensation, and the requirement of a wavelength division multiplexing system on the laser is further met.
Compared with the prior art, the invention has the following beneficial effects: according to the active semiconductor optical frequency comb laser and the light emitting chip, the high-order mode-locked laser is adopted to pass through a multi-section gain area, high-order mode locking at frequency comb intervals of more than 100GHz can be achieved through the long-cavity semiconductor mode-locked laser, and meanwhile, the wide comb tooth distance, flat topping and high-bandwidth optical frequency comb laser are finally achieved by utilizing the high-bandwidth advantage of non-uniform broadening of quantum dots; according to the active semiconductor optical frequency comb laser provided by the invention, a multi-wavelength light source can be generated only by one frequency comb laser, and the comb tooth distance of the frequency comb can reach more than 100G, so that the future commercial requirement is met; in addition, the power of the optical frequency comb of the quantum dot laser can be further improved through the on-chip integration DBR and SOA technology, and a high-power frequency comb light source with a wide frequency comb distance can be realized; the corresponding light emitting chip has the advantages of low cost and power consumption.
In light of the foregoing description of the preferred embodiments according to the present application, it is to be understood that various changes and modifications may be made without departing from the spirit and scope of the invention. The technical scope of the present application is not limited to the contents of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. An active semiconductor optical frequency comb laser, comprising:
a gain section which is a ridge waveguide type semiconductor laser;
a saturable absorber having the same shape as the gain section structure and no greater size than the gain section;
the electric isolation part is distributed between the gain part and the saturable absorber, and an electric isolation cut is formed between the gain part and the saturable absorber;
wherein the gain section and the saturable absorber have a plurality of segments connected by the electrically isolated section.
2. The active semiconductor-optical-frequency comb laser according to claim 1, wherein the gain section is N-order mode-locked by dividing the total laser cavity length by N sections, the N sections being connected by N-1 sections of the saturable absorber, each section of the gain section occupying 1/N of the total cavity length of the active semiconductor-optical-frequency comb laser.
3. The active semiconductor-optical-frequency comb laser as claimed in claim 2, wherein N is 4.
4. The active semiconductor optical-frequency comb laser of claim 1, wherein the gain section is a quantum dot laser gain.
5. The active semiconductor-optical-frequency comb laser as claimed in claim 4, wherein the active layer in the gain section is composed of a quantum dot material.
6. The active semiconductor optical-frequency comb laser as claimed in claim 1, wherein the electrically isolated section is formed by ion implantation or etching.
7. The active semiconductor-optical-frequency comb laser as claimed in claim 1, wherein a distributed bragg reflection grating is provided at a rear end of the active semiconductor-optical-frequency comb laser.
8. The active semiconductor-optical-frequency comb laser as claimed in claim 7, wherein a semiconductor optical amplifier is provided at an exit end of the active semiconductor-optical-frequency comb laser.
9. An optical transmission chip comprising the active semiconductor optical-frequency comb laser according to any one of claims 1 to 8.
10. The light emitting chip of claim 9, wherein the active semiconductor optical-frequency comb laser generates laser light that:
sequentially passes through a demultiplexer and a modulator array and is output through a multiplexer or an optical fiber array;
or, the modulated wavelengths are coupled and output through the shared waveguide sequentially through the micro-ring modulator array.
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| CN108347283A (en) * | 2018-03-09 | 2018-07-31 | 中国科学院西安光学精密机械研究所 | Coherent optical communication system based on microcavity soliton crystal frequency comb |
| CN112421378A (en) * | 2020-11-18 | 2021-02-26 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser |
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