CN113948634A - Nerve synapse device, preparation method thereof and electronic equipment - Google Patents
Nerve synapse device, preparation method thereof and electronic equipment Download PDFInfo
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- 210000000225 synapse Anatomy 0.000 title abstract description 18
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 210000005036 nerve Anatomy 0.000 title abstract description 12
- 239000002090 nanochannel Substances 0.000 claims abstract description 75
- 239000007788 liquid Substances 0.000 claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 39
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002608 ionic liquid Substances 0.000 claims description 21
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 17
- 239000012266 salt solution Substances 0.000 claims description 17
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000002401 inhibitory effect Effects 0.000 claims description 9
- -1 1-butyl-3-methylimidazole hexafluorophosphate Chemical compound 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
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- 238000005530 etching Methods 0.000 claims description 5
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- 238000000034 method Methods 0.000 abstract description 18
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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Abstract
The invention provides a neurosynaptic device, a preparation method thereof and electronic equipment. The nano-channel and the first and second micro-channels are formed on a silicon substrate. The wall surface of the nanometer channel is deposited with alumina, the two ends of the nanometer channel are respectively communicated with the first micron channel and the second micron channel, the first liquid is arranged in the first micron channel and the nanometer channel, and the second liquid is arranged in the second micron channel and the nanometer channel and forms an immiscible interface with the first liquid in the nanometer channel. The positive charges are formed on the outer wall surface of the nano channel in a mode of hydrolyzing aluminum oxide, so that the inhibition type nerve synapse device is formed based on the expressed ion transport characteristics. The neurosynaptic device has the advantages of good process consistency, more stable performance, low cost and the like, and is beneficial to further integration of the neurosynaptic device.
Description
Technical Field
The invention relates to the technical fields of memristors, nanofluidic control, brain-like computing, artificial intelligence and the like, and particularly provides a neurosynaptic device, a preparation method thereof and electronic equipment.
Background
The memristor is a circuit device for expressing the relation between magnetic flux and electric charge, comprises a metal oxide memristor, a phase-change memristor, a ferroelectric memristor, a spin memristor, a two-dimensional material memristor, a polymer memristor and the like, and is very wide in application field. The memristor has nonlinear transmission characteristics, so the memristor is generally used as a neurosynaptic unit in the brain-like computing field, and the memristor is a neurosynaptic device in the brain-like computing field. However, due to the limitations of the prior art, the conventional neurosynaptic device has the problems of complex structure, complicated manufacturing process, or high device cost, for example, an auxiliary circuit is added to achieve some functions of the neurosynaptic device, and a more complex device internal structure is designed.
Therefore, how to optimize the structure of the neurosynaptic device and improve the manufacturing process of the neurosynaptic device become the key points of urgent research and the urgent technical problems to be solved by those skilled in the art.
Disclosure of Invention
In order to solve the problems of an excessively complex structure, an excessively complex manufacturing process and the like of the conventional neurosynaptic device, one or more embodiments of the invention can particularly provide a neurosynaptic device, a manufacturing method thereof and electronic equipment, so as to achieve the technical purposes of optimizing the structure of the device, improving the manufacturing process thereof and the like.
To achieve the above technical objects, the present invention provides a neurosynaptic device including, but not limited to, a silicon substrate, a nanochannel, a first microchannel, a second microchannel, a first liquid, a second liquid, a first electrode, a second electrode, and the like.
And the nano channel is formed on the silicon substrate. And alumina is deposited on the wall surface of the nano channel.
And the first micron channel is formed on the silicon substrate and is communicated with one end of the nano channel.
And the second micro channel is formed on the silicon substrate and is communicated with the other end of the nano channel.
A first liquid disposed within the first microchannel and the nanochannel.
And the second liquid is arranged in the second micron channel and the nano channel and forms an immiscible interface with the first liquid in the nano channel.
And one end of the first electrode extends into the first micron channel and is in contact with the first liquid.
And one end of the second electrode extends into the second micron channel and is in contact with the second liquid.
Wherein the electrical conductivity of the second liquid is greater than the electrical conductivity of the first liquid.
Further, the first liquid is an ionic liquid, and the second liquid is an inorganic salt solution.
Further, the ionic liquid is 1-butyl-3-methylimidazolium hexafluorophosphate, and the inorganic salt solution is a potassium chloride solution.
Further, the neurosynaptic device further comprises a first liquid injection hole.
And the first liquid injection hole is formed in the silicon substrate and is communicated with the first micron channel.
Further, the neurosynaptic device further comprises a second liquid injection hole.
And the second liquid injection hole is formed in the silicon substrate and is communicated with the second micron channel.
Further, the first electrode and the second electrode are both reference electrodes.
Further, the neurosynaptic device is an inhibitory type neurosynaptic device.
Further, the number of the nano-channels communicating the first micro-channel and the second micro-channel is one.
To achieve the above technical objects, the present invention can also provide a method for manufacturing a neurosynaptic device, which may include, but is not limited to, at least one of the following steps.
A silicon substrate is provided.
And forming a nano channel, a first micron channel and a second micron channel on the silicon substrate by photoetching and/or etching, and enabling two ends of the nano channel to be respectively communicated with the first micron channel and the second micron channel.
And depositing a layer of aluminum oxide on the wall surface of the nano channel.
And packaging the device, and injecting a first liquid into the first micron channel and injecting a second liquid into the second micron channel so as to form an immiscible interface in the nano channel.
And arranging a first electrode and a second electrode, wherein one end of the first electrode extends into the first micron channel and is in contact with the first liquid, and one end of the second electrode extends into the second micron channel and is in contact with the second liquid.
To achieve the above technical object, the present invention may further provide an electronic device including the neurosynaptic device according to any one of the embodiments of the present invention.
The invention has the beneficial effects that:
the invention deposits alumina on the nanometer channel for connecting the first micrometer channel and the second micrometer channel, and the nerve synapse device can form positive charges on the outer wall surface of the nanometer channel by hydrolyzing the alumina, so as to form an inhibition type nerve synapse device based on the expressed ion transport characteristics. In addition, silicon is used as a device substrate, the adhesion with aluminum oxide is good, the Young modulus is matched, and an aluminum oxide film with a reliable structure can be formed on a silicon substrate, but the problems that the adhesion with aluminum oxide is poor, the Young modulus is not matched, the aluminum oxide film structure cannot be formed and the like exist in a common PDMS (Polydimethylsiloxane) substrate; moreover, the silicon substrate-based neurosynaptic device has the advantages of good process consistency, more stable performance, low cost and the like, and is beneficial to further integration of the neurosynaptic device.
In addition, the alumina film-coated neurosynaptic device provided by the invention can be matched with a conventional neurosynaptic device without an alumina film for use, so as to form a complementary neurosynaptic device combination, realize the combination of an inhibition type neurosynaptic device and an excitation type neurosynaptic device, and store and calculate the two neurosynaptic devices in a hardware neural network as memristor units in a differential pair mode, so that the weight value in the neural network can be adjusted more flexibly, for example, the weight value in the neural network can be adjusted between a positive value and a negative value, and the efficiency of the neural network can be improved. Therefore, the invention greatly enriches the application field of the nano-fluid nerve synapse device. The invention also has the advantages of easy realization of the preparation process, high preparation yield, higher consistency of devices and the like.
Drawings
FIG. 1 shows a schematic diagram of a neurosynaptic device according to one or more embodiments of the present invention.
Fig. 2 is a schematic diagram illustrating the operation principle of the ionic liquid and the dielectric solution in the nanochannel according to one or more embodiments of the present invention, which increase and decrease with the voltage change.
FIG. 3 is a schematic diagram illustrating the operation of a neurosynaptic device according to one or more embodiments of the present invention.
FIG. 4 shows a schematic current-voltage characteristic (I-V characteristic) of an inhibitory neurosynaptic device in one or more embodiments of the present disclosure.
In the figure, the position of the upper end of the main shaft,
100. a silicon substrate.
200. A nanochannel.
300. A first micron channel.
400. A second micron channel.
500. A first electrode.
600. A second electrode.
700. A first pour hole.
800. And a second liquid injection hole.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The following explains and explains a neurosynaptic device, a method for manufacturing the neurosynaptic device, and an electronic device according to the present invention in detail with reference to the drawings.
As shown in FIG. 1, one or more embodiments of the present invention can provide a neurosynaptic device, in particular, an inhibitory type neurosynaptic device. The neurosynaptic device specifically includes, but is not limited to, a silicon substrate 100, a nanochannel 200, a first microchannel 300, a second microchannel 400, a first liquid, a second liquid, a first electrode 500, a second electrode 600, a first liquid injection hole 700, and a second liquid injection hole 800, so the present invention can provide a neurosynaptic device based on nanofluidic; more specifically, the invention can provide a nanofluidic-based inhibitory neurosynaptic device.
The nano-channel 200 is formed on the silicon substrate 100 as a nano-channel. The wall surface of the nano channel 200 in the embodiment of the invention is deposited with alumina, and specifically comprises that a layer of alumina is deposited on the bottom wall and the side wall of the nano channel 200; the nano-channel 200 is a channel whose size is on the nano-scale.
According to the invention, silicon is used as a substrate of the nano-channel 200, so that the silicon can be better adhered to deposited alumina, and the Young modulus of the silicon is matched with that of the alumina, so that an alumina film with a reliable structure is formed in the nano-channel 200, and the problem that the alumina film is easy to fall off in the conventional technology is solved.
The first micro channel 300 is formed on the silicon substrate 100 as a micro channel. The first micro channel 300 is a channel with a micron-scale size, and the first micro channel 300 is communicated with one end of the nano channel 200 in the embodiment of the present invention.
The second micro channel 400 is formed on the silicon substrate 100 as a micro flow channel. The second micro channel 400 belongs to a channel having a size of a micro scale. The second micro channel 400 in the present invention is communicated with the other end of the nano channel 200.
In the embodiment of the present invention, the number of the nano-channels 200 connecting the first micro-channel 300 and the second micro-channel 400 is one. Therefore, the embodiment of the invention forms a structure that one nanometer channel is connected with two micron channels, and has the advantages of simple structure, high reliability, easy integration and the like.
The first liquid is disposed in the first micro channel 300 and the nano channel 200, the first liquid in the embodiment of the present invention is an ionic liquid, the ionic liquid is a weak electrolyte liquid, and the ionic liquid is stored through the first micro channel 300.
The second liquid is disposed in the second micro channel 400 and the nano channel 200, the second liquid and the first liquid are incompatible with each other, and an immiscible interface is formed between the second liquid and the first liquid in the nano channel 200. It can be seen that in the embodiment of the present invention, the nano-channel 200 stores the ionic liquid and the inorganic salt solution, wherein the ionic liquid and the inorganic salt solution form an immiscible liquid-liquid interface in the nano-channel 200.
As shown in fig. 2, and in conjunction with fig. 3, the working principle of the present invention is: in the nano channel, the alumina on the wall surface of the nano channel of the inorganic salt solution is hydrolyzed to cause the charges on the outer wall surface of the nano channel to be positively charged, and then a double charge layer with negative charges is formed near the inner wall surface, so that the positive charges in the inorganic salt solution are reduced and the negative charges are increased; the invention can specifically push the movement of the liquid-liquid interface through double charges generated by negative ions, and after the electric field is removed, the movement of the liquid-liquid interface can be subjected to great fluid resistance due to the specific large viscosity coefficient of the ionic liquid, so that the liquid-liquid interface can move for a certain distance under the action of inertia and stop moving, and the conductance of the nano channel is changed under the action of the electric field, and the current conductance can be recorded by reading voltage. Wherein, D in fig. 2 of the present invention can be used to represent the length of the nanochannel, and W can be used to represent the length of the ionic liquid in the nanochannel.
Alternatively, the ionic liquid in one or more embodiments of the present invention is 1-butyl-3-methylimidazolium hexafluorophosphate [ Bmin+]
The inorganic salt solution is potassium chloride solution.
As shown in fig. 3, according to the fact that the conductivity of the inorganic salt solution is greater than that of the ionic liquid, the liquid-liquid interface changes in the nanochannel, and thus the conductance of the entire nanochannel changes significantly. Because the size magnitude of the first micron channel and the second micron channel is higher than the size of the nanometer channel by three magnitudes, the electric conductance of the ionic liquid and the inorganic salt solution in the micron channel can be ignored relative to the electric conductance of the ionic liquid and the inorganic salt solution in the nanometer channel; therefore, with the voltage applied, the vast majority of the voltage drops across the nanochannel. For a liquid-liquid interface in the nano channel, if the inorganic salt solution is increased, the conductance of the nano channel is increased; if the ionic liquid is increased, the conductance of the nano-channel is reduced. It should be understood that, since the ionic liquid is a liquid with a large viscosity coefficient, an external driving force (the external driving force is an applied voltage in the present invention) is required to move the liquid-liquid interface in the nanochannel. E in FIG. 3 is used to indicate the direction of the electric field, the right side of the nanochannel being larger
For representing Bmin+Ion, larger on the right side
For representing
Ions, smaller on the left side
For representing K+Smaller on the left side
Is used to represent Cl-。
As shown in FIG. 4, the I-V characteristic curve of the inhibitory neurosynaptic device of the present invention in a specific voltage range is obtained by a DC voltage scanning method, and the current variation with voltage in three cycles is a clockwise window.
The embodiment of the invention realizes that the conductance of the device is reduced when a positive voltage is applied to the device or the conductance of the device is increased when a negative voltage is applied to the device by changing the hydrolysis characteristic of the nano channel, so that the neural synapse device provided by the embodiment of the invention is particularly an inhibition type neural synapse device, belongs to an interface type memristor based on nanofluidic and having multivaluence and degeneration, and the interface type memristor provided by the embodiment is very close to the working mechanism of an ideal memristor.
One end of the first electrode 500 extends into the first microchannel 300, the first electrode 500 is in contact with the first liquid, and the first electrode 500 serves as a power-up end of the first liquid.
One end of the second electrode 600 extends into the second microchannel 400, the second electrode 600 contacts with the second liquid, and the second electrode 600 serves as a charging end of the second liquid. In embodiments of the present invention, both first electrode 500 and second electrode 600 are reference electrodes, such as Ag/AgCl reference electrodes.
A first injection hole 700 is formed in the silicon substrate 100, the first injection hole 700 is used for injecting an ionic liquid, and the first injection hole 700 communicates with the first microchannel 300.
A second liquid injection hole 800 is formed in the silicon substrate 100, the second liquid injection hole 800 is used for injecting an inorganic salt solution, and the second liquid injection hole 800 is communicated with the second micro channel 400.
Based on the same technical concept as the neurosynaptic device provided by the embodiment of the present invention, the present invention can also provide a method for manufacturing the neurosynaptic device, which may include, but is not limited to, one or more of the following steps.
First, a silicon substrate 100 is provided. The embodiment of the invention enhances the adhesion between the nano channel 200 and the alumina film in the subsequent process based on the silicon substrate 100, and the Young modulus of silicon is matched with that of alumina, so that the alumina film structure with a reliable structure is formed.
Secondly, a nano channel 200, a first micro channel 300 and a second micro channel 400 are formed on the silicon substrate 100 by means of photoetching and/or etching, and two ends of the nano channel 200 are respectively communicated with the first micro channel 300 and the second micro channel 400, namely, a nano channel and a micro channel are formed on the silicon substrate 100. In which, the embodiment of the present invention connects the first micro channel 300 and the second micro channel 400 through one nano channel 200.
In the embodiment of the invention, the silicon substrate 100 is subjected to photoetching treatment according to the designed process layout, specifically, electron beams are utilized to carry out photoetching on the silicon substrate 100, then development and etching are carried out to prepare the nano channel 200, and then the photoresist used in photoetching is removed by a dry method; in the embodiment of the present invention, the first micron channel 300 and the second micron channel 400 may be formed on the silicon substrate 100 in an overlay alignment manner.
And depositing a layer of aluminum oxide on the wall surface of the nano channel 200, specifically depositing a layer of aluminum oxide on the bottom wall and the side wall of the nano channel 200, so that the outer side wall surface of the channel is hydrolyzed and positively charged, and then processing the inhibitory type neurosynaptic device.
Alternatively, the method for depositing the aluminum oxide in the embodiment of the invention is Atomic Layer Deposition (ALD) to form a Layer of aluminum oxide film in the nano channel of the silicon substrate.
Then, device packaging is performed, and a first liquid is injected into the first microchannel 300 and a second liquid is injected into the second microchannel 400, so as to form an immiscible interface in the nanochannel 200.
In the embodiment of the invention, the device to be packaged is cleaned by plasma, and injection packaging is carried out by using PDMS (polydimethylsiloxane).
Optionally, in the embodiment of the present invention, an ionic liquid is injected into the first micron channel 300 as a first liquid, and an inorganic salt solution is injected into the second micron channel 400 as a second liquid.
Alternatively, in one or more embodiments of the invention, the ionic liquid is 1-butyl-3-methylimidazolium hexafluorophosphate and the inorganic salt solution is potassium chloride solution.
Specifically, in the embodiment of the present invention, 1-butyl-3-methylimidazolium hexafluorophosphate is injected through the first injection hole 700 formed in the silicon substrate 100, and a potassium chloride solution is injected through the second injection hole 800 formed in the silicon substrate 100.
Finally, the first electrode 500 and the second electrode 600 are disposed such that one end of the first electrode 500 extends into the first micro-channel 300 and contacts with the first liquid, and one end of the second electrode 600 extends into the second micro-channel 400 and contacts with the second liquid, thereby obtaining the inhibitory neurosynaptic device of the present invention.
Alternatively, embodiments of the present invention provide one reference electrode in contact with the first liquid as the first electrode 500 and another reference electrode in contact with the second liquid as the second electrode 600.
The preparation method of the neural synapse device is compatible with the traditional integrated circuit process, so that the preparation of the nano-fluid neural synapse array is easier, and meanwhile, the preparation method is convenient for being integrated with a peripheral control circuit, and has great promoting significance for the realization of the integrated nano-fluid neural synapse array. Meanwhile, the preparation method modifies the nano channel in a mode of depositing aluminum oxide by an atomic layer, so that the outer wall surface of the nano channel of the device is positively charged after the nano channel is hydrolyzed in inorganic salt solution, and the movement of a liquid-liquid interface is pushed by double charges generated by negative ions in the nano channel, so that the inhibition type nerve synapse is realized.
The preparation process of the neurosynaptic device has the advantages of simple flow, high preparation yield, high consistency of the device and the like, and can obtain an inhibition type neurosynaptic device with high reliability and high stability. The method changes the hydrolysis characteristic of the wall surface of the nano channel by modifying the nano channel by a semiconductor process method, thereby realizing an inhibition type nerve synapse device based on nanofluidic control and promoting the application and development of an interface type memristor.
The inhibitory type nerve synapse device provided by the invention can be combined with the existing excitatory type nerve synapse device to form a complementary nerve synapse device combination. In a hardware neural network, the two types of neural synapse devices are used as memristor units to be stored and calculated in a differential pair mode, so that the weight value in the neural network can be adjusted more flexibly, for example, the weight value in the neural network can be adjusted between a positive value and a negative value, and the efficiency of the neural network is improved. Therefore, the method greatly enriches the application field of the nano-fluid nerve synapse device, and has the advantages of high device preparation yield, good device consistency and the like.
The present invention can also provide an electronic device that may include, but is not limited to, a neurosynaptic device in any of the embodiments of the present invention. The electronic device related in the embodiment of the present invention refers to a device having at least one of a calculation function, a storage function, and a display function.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
In the description herein, references to the description of the term "the present embodiment," "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. A neurosynaptic device, comprising:
a silicon substrate;
a nano channel formed on the silicon substrate; alumina is deposited on the wall surface of the nano channel;
the first micron channel is formed on the silicon substrate and is communicated with one end of the nano channel;
the second micron channel is formed on the silicon substrate and is communicated with the other end of the nano channel;
a first liquid disposed within the first microchannel and the nanochannel;
the second liquid is arranged in the second micron channel and the nano channel and forms an immiscible interface with the first liquid in the nano channel;
a first electrode, one end of which extends into the first micron channel and is contacted with the first liquid;
one end of the second electrode extends into the second micron channel and is in contact with the second liquid;
wherein the electrical conductivity of the second liquid is greater than the electrical conductivity of the first liquid.
2. The neurosynaptic device of claim 1,
the first liquid is an ionic liquid;
the second liquid is an inorganic salt solution.
3. The neurosynaptic device of claim 2,
the ionic liquid is 1-butyl-3-methylimidazole hexafluorophosphate;
the inorganic salt solution is a potassium chloride solution.
4. The neurosynaptic device of claim 1, further comprising:
and the first liquid injection hole is formed in the silicon substrate and is communicated with the first micron channel.
5. The neurosynaptic device of claim 1, further comprising:
and the second liquid injection hole is formed in the silicon substrate and is communicated with the second micron channel.
6. The neurosynaptic device of claim 1,
the first electrode and the second electrode are both reference electrodes.
7. The neurosynaptic device of claim 1,
the neurosynaptic device is an inhibitory neurosynaptic device.
8. The neurosynaptic device of claim 1,
the number of the nanometer channels for communicating the first micron channel and the second micron channel is one.
9. A method of making a neurosynaptic device, comprising:
providing a silicon substrate;
forming a nano channel, a first micron channel and a second micron channel on the silicon substrate through photoetching and/or etching, and enabling two ends of the nano channel to be respectively communicated with the first micron channel and the second micron channel;
depositing a layer of aluminum oxide on the wall surface of the nano channel;
encapsulating a device, and injecting a first liquid into the first micron channel and injecting a second liquid into the second micron channel so as to form an immiscible interface in the nano channel;
and arranging a first electrode and a second electrode, wherein one end of the first electrode extends into the first micron channel and is in contact with the first liquid, and one end of the second electrode extends into the second micron channel and is in contact with the second liquid.
10. An electronic device comprising a neurosynaptic device according to any one of claims 1 to 8.
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