CN113937620A - High-power single transverse mode semiconductor laser and control method thereof - Google Patents

High-power single transverse mode semiconductor laser and control method thereof Download PDF

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CN113937620A
CN113937620A CN202111024380.9A CN202111024380A CN113937620A CN 113937620 A CN113937620 A CN 113937620A CN 202111024380 A CN202111024380 A CN 202111024380A CN 113937620 A CN113937620 A CN 113937620A
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ridge waveguide
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CN113937620B (en
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张敏明
杨思康
刘德明
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3421—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer structure of quantum wells to influence the near/far field

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Abstract

The invention discloses a high-power single transverse mode semiconductor laser and a control method thereof, wherein the laser comprises an N-surface electrode, an N-type substrate, a lower limiting layer, a multi-quantum well active region, an upper limiting layer, a P-type upper cladding layer, a P-type waveguide layer and a P-surface electrode, the P-type waveguide layer comprises a first ridge waveguide array and a second ridge waveguide array which are axially symmetrical, the first ridge waveguide array is a gain waveguide array and has a gain coefficient gammaaThe second ridge waveguide array is a loss waveguide array and has a loss coefficient gammabThe first ridge waveguide array and the second ridge waveguide array are coupled with each other and have a coupling coefficient k of a fundamental mode0And first order mode coupling coefficient k1Gain coefficient γ of the first ridge waveguideaAnd the loss coefficient gamma of the second ridge waveguidebIs independently adjustable and satisfies k0<(γa‑γb)/2<κ1The area of an active region is increased by arranging the first ridge waveguide array so as to improve the output optical power of the laser, and a high-order mode is filtered by breaking the space-time symmetry, so that single transverse mode lasing is realized.

Description

High-power single transverse mode semiconductor laser and control method thereof
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to a high-power single transverse mode semiconductor laser and a control method thereof.
Background
The semiconductor laser has the advantages of low cost, small volume, batch production and the like, and becomes a core component in the wide application field. Among them, a high-power semiconductor laser having a good far-field characteristic is receiving wide attention, and plays a crucial role in the fields of pump light sources, material processing, biomedicine, free space optical communication, laser radar, and the like. The improvement of the output light power of the laser and the guarantee of the single-mode characteristic are important research directions for improving the far-field characteristic.
Widening the active region in the lateral and longitudinal directions is the most common method for increasing the output power, but in order to ensure the single transverse mode characteristic of the laser, a mode filter is usually required to be designed to filter out higher-order modes, such as a tapered waveguide structure and a coupled waveguide structure. The laser array is another means for improving the output light power of the laser, the laser power can be effectively improved by integrating a plurality of lasers together, but the laser array supports a plurality of spatial modes, and in order to ensure the single transverse mode characteristic of the laser, a reverse waveguide or a super-symmetric laser array coupled by a leakage mode is required to be adopted to filter a high-order mode and improve the far-field characteristic of the laser. However, the method has a complex structure, is difficult to expand to a larger-scale laser array, and limits further improvement of the output light power of the laser array.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a high-power single transverse mode large-scale semiconductor laser array and a control method thereof, and aims to filter a high-order mode through space symmetry-time symmetry by utilizing the difference of coupling coefficients of a fundamental mode and the high-order mode, realize single transverse mode lasing and improve the far-field characteristic of an array laser.
To achieve the above object, according to one aspect of the present invention, there is provided a high power single transverse mode semiconductor laser comprising an N-face electrode, an N-type substrate, a lower confinement layer, a multiple quantum well active region, an upper confinement layer, a P-type upper cladding layer, a P-type waveguide layer and a P-face electrode stacked in this order, wherein,
the P-type waveguide layer comprises a first ridge waveguide arrayThe array comprises a first ridge waveguide array and a second ridge waveguide array, the first ridge waveguide array and the second ridge waveguide array are axially symmetrical, the P-surface electrode comprises a first electrode and a second electrode which are insulated from each other, the first electrode covers the first ridge waveguide array, the second electrode covers the second ridge waveguide array, the first ridge waveguide array and the second ridge waveguide array are coupled with each other and have a fundamental mode coupling coefficient kappa0And first order mode coupling coefficient k1The first ridge waveguide array is used for increasing the area of an active region to improve the output optical power of the laser, and is a gain waveguide array with a gain coefficient gammaaThe second ridge waveguide array is used for filtering high-order modes in the ridge waveguide array, and is a loss waveguide array and has a loss coefficient gammabA gain coefficient γ of the first ridge waveguideaAnd a loss coefficient γ of the second ridge waveguidebIs independently adjustable and satisfies k0<(γa-γb)/2<κ1。
Preferably, the method further comprises forming an ion implantation region between the first ridge waveguide array and the second ridge waveguide array, wherein the ion implantation region is used for forming an insulation region between the first ridge waveguide array and the second ridge waveguide array, and avoiding the mutual influence of the injection currents of the first ridge waveguide array and the second ridge waveguide array, so that the gain coefficient gamma of the first ridge waveguide is enabled to be gammaaAnd a loss coefficient γ of the second ridge waveguidebIs independently adjustable.
Preferably, the first electrode and the second electrode are respectively connected with different currents, the current connected to the first electrode is used for adjusting the gain coefficient of the first ridge waveguide array, and the current connected to the second electrode is used for adjusting the loss coefficient of the second ridge waveguide array.
According to another aspect of the present invention, there is provided a high power single transverse mode semiconductor laser control method, comprising:
providing a semiconductor structure, wherein the semiconductor structure comprises an N-surface electrode, an N-type substrate, a lower limiting layer, a multi-quantum well active region, an upper limiting layer, a P-type upper cladding layer, a P-type waveguide layer and a P-surface electrode which are sequentially stacked, the P-type waveguide layer comprises a first ridge waveguide array and a second ridge waveguide array, the first ridge waveguide array and the second ridge waveguide array are in axial symmetry, the P-surface electrode comprises a first electrode and a second electrode which are mutually insulated, the first electrode covers the first ridge waveguide array, the second electrode covers the second ridge waveguide array, the first ridge waveguide array is used for increasing the area of the active region to improve the output optical power of a laser, and the second ridge waveguide array is used for filtering a high-order mode in the ridge waveguide array;
controlling the mutual coupling of the first ridge waveguide array and the second ridge waveguide array, and having a fundamental mode coupling coefficient k0And first order mode coupling coefficient k1；
Controlling the first ridge waveguide array to be a gain waveguide array and having a gain coefficient gammaa(ii) a Controlling the second ridge waveguide array to be a loss waveguide array and having a loss coefficient gammab(ii) a A gain coefficient γ of the first ridge waveguideaAnd a loss coefficient γ of the second ridge waveguidebIs independently adjustable and satisfies k0<(γa-γb)/2<κ1。
Preferably, the first ridge waveguide array is controlled to be a gain waveguide array and has a gain coefficient γaThe method comprises the following steps: applying a current to a first electrode to control a gain coefficient γ of the first ridge waveguide arrayaThe second ridge waveguide array is a loss waveguide array and has a loss coefficient gammab(ii) a Comprising applying a current to a second electrode to control a loss factor γ of the second ridge waveguide arrayb。
Preferably, the current applied to the first electrode is a forward bias current and the current applied to the second electrode is a reverse bias current.
Preferably, the forward bias current applied to the first electrode is larger than a threshold current of the semiconductor laser for exciting laser light.
In general, with the above technical solution, the P-type waveguide layer comprises a ridge waveguide array structure capable of increasing the active areaThe area of the region, thereby increasing the output optical power of the laser. Meanwhile, the P-type waveguide layer specifically comprises two symmetrical ridge waveguide arrays, coupling exists between the two ridge waveguide arrays, and the gain coefficient gamma of one waveguide arrayaLoss coefficient gamma with another waveguide arraybSatisfies kappa0<(γa-γb)/2<κ1Wherein (γ)a-γb) And/2 is smaller than the first-order coupling coefficient, so that the high-order mode keeps the space-time symmetry and is uniformly distributed between the two arrays, and the high-order mode can not be radiated without gain and loss, thereby filtering the high-order mode. And (gamma)a-γb) And/2 is larger than the coupling coefficient of the fundamental mode, so that the fundamental mode breaks the space-time symmetry and is split into two modes, wherein one mode is lossy and cannot be excited, and the other mode has gain and can be excited, thereby realizing single transverse mode excitation and improving the far field characteristic of the array laser. The method is simple in design and can be easily expanded to a larger-scale laser array. In addition, the scheme does not need a special epitaxial structure, can be completed through one-time epitaxy and common photoetching, and has the advantages of simple preparation and low production cost.
Drawings
Fig. 1 is a schematic structural diagram of a high-power single transverse mode semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating gain and loss tuning ranges for single transverse mode lasing, according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a mode field distribution of single transverse mode lasing according to an embodiment of the present invention;
fig. 4 is a far-field distribution diagram of a light field of single transverse mode lasing according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 is a cross-sectional view of a high power single transverse mode semiconductor laser, which includes: the N-type planar waveguide structure comprises an N-surface electrode 1, an N-type substrate 2, a lower limiting layer 3, a multi-quantum well active region 4, an upper limiting layer 5, a P-type upper cladding layer 6, a P-type waveguide layer 8 and a P-surface electrode 9. The P-type waveguide layer 8 includes two sets of ridge waveguide arrays, which are a first ridge waveguide array and a second ridge waveguide array, respectively, and the first ridge waveguide array and the second ridge waveguide array are axisymmetric. Correspondingly, the P-plane electrode 9 also includes a first electrode and a second electrode insulated from each other, the first electrode covers the first ridge waveguide array, and the second electrode covers the second ridge waveguide array. The semiconductor structure under the first electrode forms one resonant cavity, the semiconductor structure under the second electrode forms the other resonant cavity, the two resonant cavities are coupled with each other, the coupling coefficients of different modes are different, and the first-order mode coupling coefficient kappa1Higher than the coupling coefficient of fundamental mode kappa0. Wherein the first ridge waveguide array is used for increasing the area of the active region to improve the output optical power of the laser, is modulated into a gain waveguide and has a gain coefficient gammaaA second ridge waveguide array for filtering high order modes in the ridge waveguide array, the second ridge waveguide array being tuned to a loss coefficient and having a loss coefficient γbWherein the first-order mode coupling coefficient k1Coefficient of coupling of fundamental mode κ0A gain coefficient gammaaAnd loss coefficient gammabSatisfies kappa0<(γa-γb)/2<κ1。
There is coupling between two sets of ridge waveguide arrays, and the propagation constants of different modes of the laser array can be expressed as:
Figure BDA0003242599520000051
wherein, betamIs the propagation constant of different modes, gammaaAnd gammabGain and loss coefficients, k, of two ridge waveguide arrays, respectivelymIs a coupling coefficient of different modes, wherein the coupling coefficient of the higher order mode is higher than that of the lower order modeAnd (4) counting. The applicant has found that when (gamma)a-γb)/2<κmIn time, the m-order mode keeps the space-time symmetry and is uniformly distributed between the two groups of arrays, so that the laser can not be fired without gain and loss. When (gamma)a-γb)/2>κmIn time, the m-order mode breaks the space-time symmetry and is split into two modes, wherein one mode is lossy and cannot lase, and the other mode has gain and can lase. Therefore, by designing appropriate coupling coefficient, gain coefficient and loss coefficient to satisfy k0<(γa-γb)/2<κ1. The basic mode can break the space-time symmetry to realize the laser, and the other high-order modes still keep the space-time symmetry and cannot realize the laser, thereby realizing the single transverse mode laser.
In one embodiment, as shown in fig. 1, the high power single transverse mode semiconductor laser further includes an ion implantation region 7, and the ion implantation region 7 is located in the P-type upper cladding layer between the two sets of ridge waveguide arrays. An insulating area is formed by proton injection, so that mutual influence of injection currents of the two resonant cavities is avoided, and the gain coefficients and the coupling coefficients of the two resonant cavities are independently adjustable.
In an embodiment, the first electrode and the second electrode are respectively connected with different currents, the current connected to the first electrode is used for adjusting a gain coefficient of the first ridge waveguide array, and the current connected to the second electrode is used for adjusting a loss coefficient of the second ridge waveguide array. When the laser is in an operating state, wherein the first electrode is injected with a large current to provide gain, and the second electrode is injected with a small current or is reversely biased to provide loss. The gain factor and the loss factor can be controlled by controlling the injection current.
In one embodiment, the two sets of ridge waveguide arrays are symmetrical to each other, and the widths of the waveguides in each set of ridge waveguide arrays are the same. In one embodiment, the waveguides in each set of ridge waveguide arrays are equally spaced. In a specific embodiment, the array number N of each group of ridge waveguide arrays is 18, the waveguide width is 1.2 microns, the waveguide spacing is 0.8 microns, and the etching depth is 2 microns. The tuning ranges of the gain coefficient and the loss coefficient of the two corresponding sets of ridge waveguide arrays are shown in fig. 2, which illustrates that the laser arrays can realize single transverse mode lasing in a larger range. FIG. 3 is a diagram showing the mode field distribution of the laser array in the embodiment based on the above preferred parameters. In the embodiment of the invention, only the fundamental mode breaks the space-time symmetry and is split into two modes, wherein one mode is distributed in the loss waveguide array and can not be excited, and the other mode is distributed in the gain waveguide array and can be excited. The other modes keep space-time symmetry and are uniformly distributed in the gain waveguide array and the loss waveguide array, and the laser cannot be emitted. Therefore, the laser array in the embodiment of the invention realizes single transverse mode lasing. The far field distribution characteristics are shown in fig. 4, the half maximum width of the slow-axis far field divergence angle is 1.8 °, and the half maximum width of the fast-axis far field divergence angle is 40 °. It should be noted that the above parameters are parameters of the preferred embodiment of the present invention, but the above parameters are not limited to the above parameters, and other waveguide widths, waveguide intervals and etching depths may be used.
The application also relates to a control method of the high-power single transverse mode semiconductor laser, which comprises the following steps:
step S100: providing a semiconductor structure, wherein the semiconductor structure comprises an N-surface electrode, an N-type substrate, a lower limiting layer, a multi-quantum well active region, an upper limiting layer, a P-type upper cladding layer, a P-type waveguide layer and a P-surface electrode which are sequentially stacked, the P-type waveguide layer comprises a first ridge waveguide array and a second ridge waveguide array, the first ridge waveguide array and the second ridge waveguide array are in axial symmetry, the P-surface electrode comprises a first electrode and a second electrode which are mutually insulated, the first electrode covers the first ridge waveguide array, the second electrode covers the second ridge waveguide array, the first ridge waveguide array is used for increasing the area of the active region to improve the output optical power of a laser, and the second ridge waveguide array is used for filtering a high-order mode in the ridge waveguide array; .
As shown in fig. 1, a semiconductor structure is provided, comprising: the N-type planar waveguide structure comprises an N-surface electrode 1, an N-type substrate 2, a lower limiting layer 3, a multi-quantum well active region 4, an upper limiting layer 5, a P-type upper cladding layer 6, a P-type waveguide layer 8 and a P-surface electrode 9. The P-type waveguide layer 8 includes two sets of ridge waveguide arrays, which are a first ridge waveguide array and a second ridge waveguide array, respectively, and the first ridge waveguide array and the second ridge waveguide array are axisymmetric. Correspondingly, the P-plane electrode 9 also includes a first electrode and a second electrode insulated from each other, the first electrode covers the first ridge waveguide array, and the second electrode covers the second ridge waveguide array. The semiconductor structure under the first electrode forms a resonant cavity, the semiconductor structure under the second electrode forms another resonant cavity, and the two resonant cavities are coupled with each other. The above semiconductor structure is described above and will not be described herein.
Step S200: controlling the mutual coupling of the first ridge waveguide array and the second ridge waveguide array, and having a fundamental mode coupling coefficient k0And first order mode coupling coefficient k1(ii) a Controlling the first ridge waveguide array to be a gain waveguide array and having a gain coefficient gammaa(ii) a Controlling the second ridge waveguide array to be a loss waveguide array and having a loss coefficient gammab(ii) a A gain coefficient γ of the first ridge waveguideaAnd a loss coefficient γ of the second ridge waveguidebIs independently adjustable and satisfies k0<(γa-γb)/2<κ1。
Specifically, a current is applied to the first electrode to control the gain coefficient γ of the first ridge waveguide arrayaApplying a current to a second electrode to control a loss factor γ of the second ridge waveguide arrayb. The current applied to the first electrode is a forward bias current, the current applied to the second electrode is a reverse bias current, and the forward bias current applied to the first electrode is larger than a threshold current of the semiconductor laser for exciting laser.
In the application, the P-type waveguide layer comprises a ridge waveguide array structure, and the ridge waveguide array structure can increase the area of an active region, so that the output optical power of the laser is improved. Meanwhile, the P-type waveguide layer specifically comprises two symmetrical ridge waveguide arrays, coupling exists between the two ridge waveguide arrays, and the gain coefficient gamma of one waveguide arrayaLoss coefficient gamma with another waveguide arraybSatisfies kappa0<(γa-γb)/2<κ1Wherein (γ)a-γb) The/2 is less than the first-order coupling coefficient, so that the high-order mode keeps the space-time symmetry and is uniformly dividedDistributed between two arrays, and has no gain and no loss and can not radiate, so as to filter out high-order mode. And (gamma)a-γb) And/2 is larger than the coupling coefficient of the fundamental mode, so that the fundamental mode breaks the space-time symmetry and is split into two modes, wherein one mode is lossy and cannot be excited, and the other mode has gain and can be excited, thereby realizing single transverse mode excitation and improving the far field characteristic of the array laser. The method is simple in design and can be easily expanded to a larger-scale laser array. In addition, the scheme does not need a special epitaxial structure, can be completed through one-time epitaxy and common photoetching, and has the advantages of simple preparation and low production cost
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (7)

1. A high-power single transverse mode semiconductor laser is characterized by comprising an N-surface electrode, an N-type substrate, a lower limiting layer, a multi-quantum well active region, an upper limiting layer, a P-type upper cladding layer, a P-type waveguide layer and a P-surface electrode which are sequentially stacked, wherein,
the P-type waveguide layer comprises a first ridge waveguide array and a second ridge waveguide array, the first ridge waveguide array and the second ridge waveguide array are axisymmetric, the P-surface electrode comprises a first electrode and a second electrode which are insulated from each other, the first electrode covers the first ridge waveguide array, the second electrode covers the second ridge waveguide array, the first ridge waveguide array and the second ridge waveguide array are coupled with each other and have a fundamental mode coupling coefficient kappa0And first order mode coupling coefficient k1The first ridge waveguide array is used for increasing the area of an active region to improve the output optical power of the laser, and is a gain waveguide array with a gain coefficient gammaaThe second ridge waveguide array is used for filtering high-order modes in the ridge waveguide array, and is a loss waveguide array and has a loss coefficient gammabA gain coefficient γ of the first ridge waveguideaAnd a loss coefficient γ of the second ridge waveguidebIs independently adjustable and satisfies k0<(γa-γb)/2<κ1。
2. The high power single transverse mode semiconductor laser as claimed in claim 1 further comprising an ion implantation region formed between the first ridge waveguide array and the second ridge waveguide array for forming an insulating region between the first ridge waveguide array and the second ridge waveguide array to prevent the first ridge waveguide array and the second ridge waveguide array from being affected by the injection current so that the gain coefficient γ of the first ridge waveguide arrayaAnd a loss coefficient γ of the second ridge waveguidebIs independently adjustable.
3. The high power single transverse mode semiconductor laser of claim 1, wherein the first electrode and the second electrode are each coupled to a different current, the current coupled to the first electrode being used to adjust the gain coefficient of the first ridge waveguide array, and the current coupled to the second electrode being used to adjust the loss coefficient of the second ridge waveguide array.
4. A control method of a high-power single transverse mode semiconductor laser is characterized by comprising the following steps:
providing a semiconductor structure, wherein the semiconductor structure comprises an N-surface electrode, an N-type substrate, a lower limiting layer, a multi-quantum well active region, an upper limiting layer, a P-type upper cladding layer, a P-type waveguide layer and a P-surface electrode which are sequentially stacked, the P-type waveguide layer comprises a first ridge waveguide array and a second ridge waveguide array, the first ridge waveguide array and the second ridge waveguide array are in axial symmetry, the P-surface electrode comprises a first electrode and a second electrode which are mutually insulated, the first electrode covers the first ridge waveguide array, the second electrode covers the second ridge waveguide array, the first ridge waveguide array is used for increasing the area of the active region to improve the output optical power of a laser, and the second ridge waveguide array is used for filtering a high-order mode in the ridge waveguide array;
controlling the mutual coupling of the first ridge waveguide array and the second ridge waveguide array, and having a fundamental mode coupling coefficient k0And first order mode coupling coefficient k1；
Controlling the first ridge waveguide array to be a gain waveguide array and having a gain coefficient gammaa(ii) a Controlling the second ridge waveguide array to be a loss waveguide array and having a loss coefficient gammab(ii) a A gain coefficient γ of the first ridge waveguideaAnd a loss coefficient γ of the second ridge waveguidebIs independently adjustable and satisfies k0<(γa-γb)/2<κ1。
5. The method of claim 4 wherein the first ridge waveguide array is controlled to be a gain waveguide array and has a gain factor γaThe method comprises the following steps: applying a current to a first electrode to control a gain coefficient γ of the first ridge waveguide arrayaThe second ridge waveguide array is a loss waveguide array and has a loss coefficient gammab(ii) a Comprising applying a current to a second electrode to control a loss factor γ of the second ridge waveguide arrayb。
6. The method of claim 5 wherein the current applied to the first electrode is a forward bias current and the current applied to the second electrode is a reverse bias current.
7. The method of claim 6 wherein the forward bias current applied to the first electrode is greater than a threshold current for lasing of the semiconductor laser.
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