CN113936844B - Transparent conductive electrode, preparation method thereof and electronic device - Google Patents

Transparent conductive electrode, preparation method thereof and electronic device Download PDF

Info

Publication number
CN113936844B
CN113936844B CN202010670908.9A CN202010670908A CN113936844B CN 113936844 B CN113936844 B CN 113936844B CN 202010670908 A CN202010670908 A CN 202010670908A CN 113936844 B CN113936844 B CN 113936844B
Authority
CN
China
Prior art keywords
metal
transparent conductive
substrate
transparent
nanowire network
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010670908.9A
Other languages
Chinese (zh)
Other versions
CN113936844A (en
Inventor
王硕
辛凯
刘云峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Priority to CN202010670908.9A priority Critical patent/CN113936844B/en
Priority to PCT/CN2021/104086 priority patent/WO2022012351A1/en
Publication of CN113936844A publication Critical patent/CN113936844A/en
Application granted granted Critical
Publication of CN113936844B publication Critical patent/CN113936844B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The application provides a transparent conductive electrode, a preparation method thereof and an electronic device, relates to the technical field of transparent conduction, and can reduce the sheet resistance of the transparent conductive electrode. The transparent conductive electrode comprises a transparent substrate, and a metal grid and a metal nanowire network which are embedded in the transparent substrate; the metal nanowire network is positioned in a mesh area of the metal grid; the transparent substrate includes a first surface located in a thickness direction; the metal grid and the metal nanowire network are exposed out of the first surface and are flush with the first surface; the transparent conductive electrode further includes: a transparent conductive modification layer; the transparent conductive modification layer covers the first surface, and the metal grids and the metal nanowire network exposed out of the first surface.

Description

Transparent conductive electrode, preparation method thereof and electronic device
Technical Field
The application relates to the technical field of transparent conduction, in particular to a transparent conductive electrode, a preparation method thereof and an electronic device.
Background
The transparent conductive electrode (also referred to as a transparent electrode for short) is widely applied to the fields of photoelectric conversion, information display, solid illumination and the like based on the light transmittance thereof, the conventional transparent electrode is mostly made of Transparent Conductive Oxide (TCO), and the sheet resistance of the formed transparent electrode is relatively high due to the relatively high resistivity of the TCO, especially in a flexible substrate scene, the sheet resistance of the transparent electrode can generally reach dozens of ohms or even hundreds of ohms, so that the resistance of the large-area transparent electrode can be greatly increased, and further the problem that the application of the transparent electrode is limited is caused.
Taking the application of a transparent electrode in a solar cell (also called as a photovoltaic cell) as an example, the transparent electrode is used as an important component of the solar cell, and since the sheet resistance of the transparent electrode is too high, the photoelectric conversion efficiency of the solar cell is seriously affected, the large-area solar cell usually adopts a mode of serially connecting a plurality of narrow strip-shaped sub-cells, so that the solar cell itself has lines visible to human eyes, and the application scene is further limited to a great extent; for example, electronic products such as intelligent wearing field, consumer electronics and the like have high requirements on visual performance and aesthetic degree, and the solar cell adopting a series connection mode of a plurality of narrow strip-shaped sub-cells cannot meet the requirements at present; therefore, it is necessary to design a transparent electrode with low sheet resistance to expand the application range of the solar cell.
Disclosure of Invention
The application provides a transparent conductive electrode, a preparation method thereof and an electronic device, which can reduce the sheet resistance of the transparent conductive electrode.
The application provides a transparent conductive electrode, which comprises a transparent substrate, and a metal grid and a metal nanowire network which are embedded in the transparent substrate; the metal nanowire network is positioned in a mesh area of the metal grid; the transparent substrate includes a first surface located in a thickness direction; the metal grid and the metal nanowire network are exposed out of the first surface and are flush with the first surface; the transparent conductive electrode further includes: a transparent conductive modification layer; the transparent conductive modification layer covers the first surface, and the metal grids and the metal nanowire network exposed out of the first surface.
In the transparent conductive electrode provided by the application, the transparent conductive modification layer is arranged on the surface of the transparent substrate embedded with the metal grid and the metal nanowire network, on one hand, the metal grid and the metal nanowire network are arranged to be exposed out of the surface of the transparent substrate and directly contact with the transparent conductive modification layer, so that the metal nanowire network can provide an auxiliary high-conductivity path for the transverse migration of carriers for the transparent conductive modification layer, and the metal grid efficiently collects the carriers (taking the application of the transparent conductive electrode in a photocell as an example), so that the square resistance of the transparent conductive electrode is effectively reduced; on the other hand, the metal grid, the metal nanowire network and the transparent substrate are arranged to be flush with the surface of one side, which is in contact with the transparent conductive modification layer, so that the defects that the transparent conductive modification layer is out of work or generates large leakage current due to steps or puncture caused by unevenness below the transparent conductive modification layer are avoided.
In some possible implementations, the transparent substrate further includes a second surface located opposite the first surface; the metal grid and the metal nanowire network are not exposed out of the second surface; so as to avoid unnecessary electrical connection (such as short circuit) between the transparent conductive electrode and other circuits or devices on the second surface side during the use process of the transparent conductive electrode.
In some possible implementations, the surface of the metal nanowire network embedded in the transparent substrate is covered with oxide nanoparticles; the metal nanowire is more compact at the lapping position, the contact resistance of the metal nanowire at the lapping position is also reduced, the conductivity of the metal nanowire network is also improved, the sheet resistance of the transparent conductive electrode is further reduced, and the conductivity of the transparent conductive electrode is improved.
In some possible implementations, the metal nanowire network is a silver nanowire network.
In some possible implementations, the transparent conductive modification layer includes one or more of transparent conductive oxide, transparent conductive polymer, carbon nanotube, and graphene.
In some possible implementations, the transparent substrate is a flexible substrate.
Embodiments of the present application also provide an electronic device including a transparent conductive electrode as provided in any one of the foregoing possible implementations.
In some possible implementations, the electronic device includes a photovoltaic cell; at least one electrode in the photocell adopts a transparent conductive electrode.
The embodiment of the present application further provides a preparation method of a transparent conductive electrode, including: forming a colloidal layer on a substrate; forming a hollow grid groove on the colloid layer to obtain a colloid pattern layer; forming metal grids on the substrate in the grid grooves of the colloid pattern layer, and removing the colloid pattern layer; forming a metal nanowire network on the substrate positioned in the mesh region of the metal mesh; forming a polymer transparent film layer on the substrate on which the metal grids and the metal nanowire networks are formed so as to embed the metal grids and the metal nanowire networks in the polymer transparent film layer; stripping the polymer transparent film layer, the metal grids embedded in the polymer transparent film layer and the metal nanowire networks from the substrate to obtain a transparent conductive substrate; and forming a transparent conductive modification layer on the surface of the stripping side of the transparent conductive substrate.
By adopting the manufacturing method, the metal grid and the metal nanowire network are manufactured on the substrate, then the polymer transparent film layer (namely the transparent substrate serving as the transparent conductive electrode) is formed, namely the metal grid and the metal nanowire network are embedded into the transparent substrate by adopting a reverse embedding process, on one hand, the metal grid and the metal nanowire network can be exposed out of the surface of the transparent substrate and directly contacted with the transparent conductive modification layer, so that the metal nanowire network can provide an auxiliary high-conductivity path for transverse migration of current carriers for the transparent conductive modification layer, and the metal grid can efficiently collect the current carriers (taking the application of the transparent conductive electrode in a photocell as an example), thereby effectively reducing the sheet resistance of the transparent conductive electrode; on the other hand, under the condition that the planarization treatment is carried out without an additional complex planarization process (such as chemical or mechanical polishing treatment), the metal grid, the metal nanowire network and the transparent substrate are ensured to be coplanar (namely, an interface with zero step and ultra-low roughness) at one side contacting with the transparent conductive modification layer, so that the smoothness of the transparent conductive modification layer is ensured, and the defects that the transparent conductive modification layer is failed or generates large leakage current due to the step or the puncture caused by the unevenness below the transparent conductive modification layer are avoided.
In some possible implementations, forming the hollowed grid grooves on the colloid layer to obtain the colloid pattern layer includes: and forming a hollow grid groove on the colloid layer by adopting a photoetching method or a nano-imprinting method.
In some possible implementations, forming a metal grid on the substrate within the grid grooves of the gum pattern layer includes: forming a metal grid on the substrate in the grid groove of the colloid pattern layer by adopting a selective electroplating process; wherein, the substrate is a conductive substrate.
In some possible implementations, forming a metal nanowire network on a substrate located at a mesh area of the metal mesh comprises: and filling a solution containing the nano metal wires into the mesh area of the metal grid by adopting a coating process to form a metal nano wire network on the substrate in the mesh area of the metal grid.
In some possible implementations, forming the metal nanowire network on the substrate located at the mesh region of the metal mesh comprises: and filling a solution containing the nano metal wires and the oxide nanoparticles into the mesh area of the metal grid by adopting a coating process so as to form a metal nanowire network with the surface covered with the oxide nanoparticles on the substrate in the mesh area of the metal grid.
The solution containing the oxide nano particles and the metal nano wires can provide a capillary force in the solvent evaporation process, the oxide nano particles are randomly gathered on the surfaces of the metal nano wires, particularly the surfaces of the lapping positions of the metal nano wires, so that the metal nano wires are more compact in the lapping positions, the contact resistance of the metal nano wires in the lapping positions is reduced, and the conductivity of the metal nano wire network is also improved.
In some possible implementations, the forming the metal nanowire network on the substrate located at the mesh area of the metal mesh comprises: firstly, filling a solution containing nano metal wires to a mesh area of a metal grid by adopting a coating process to form a metal nanowire network, and then filling a solution containing oxide nanoparticles to the mesh area of the metal grid by adopting the coating process to form the metal nanowire network with oxide nanoparticles covered on the surface on a substrate in the mesh area of the metal grid.
The solvent evaporation process can provide capillary force, and the oxide nano particles are randomly gathered on the surface of the metal nanowire network, especially on the surface of the lapping position of the metal nanowires, so that the metal nanowires can be more compact in the lapping position, the contact resistance of the metal nanowires at the lapping position is reduced, and the conductivity of the metal nanowire network is improved.
Drawings
Fig. 1 is an exploded schematic structural diagram of a transparent conductive electrode according to an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view of the transparent conductive electrode of FIG. 1;
fig. 3 is a schematic structural diagram of a partial film layer of a transparent conductive electrode according to an embodiment of the present disclosure;
fig. 4 is a flowchart of a method for manufacturing a transparent conductive electrode according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a process for manufacturing a transparent conductive electrode according to an embodiment of the present application;
fig. 6 is a structural schematic of a photovoltaic cell provided in an embodiment of the present application.
Detailed Description
To make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly described below with reference to the drawings in the present application, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first," "second," and the like in the description examples and claims of this application and in the drawings are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, nor order. Furthermore, the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover a non-exclusive inclusion, such as a list of steps or elements. A method, system, article, or apparatus is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such process, system, article, or apparatus. "upper," "lower," and the like are used only in relation to the orientation of the components in the drawings, which directional terms are relative terms that are used for descriptive and clarifying purposes and that will vary accordingly depending upon the orientation in which the components in the drawings are placed.
The embodiment of the present application provides a transparent conductive electrode, as shown in fig. 1 (an exploded schematic view) and fig. 2 (a cross-sectional schematic view of fig. 1), which includes a transparent substrate 1 (having non-conductivity) and a metal mesh 2, a metal nanowire network 3 embedded in the transparent substrate 1; wherein, the metal nanowire network 3 is located in the mesh area C of the metal grid 2.
Referring to fig. 3 (a part of the film layers is omitted), the transparent substrate 1 includes a first surface A1 (may also be referred to as an upper surface) on a first side and a second surface A2 (may also be referred to as a lower surface) on a second side in a thickness direction DD'; on the first side of the transparent conductive electrode in the thickness direction DD', the metal mesh 2 and the metal nanowire network 3 are exposed out of the first surface A1 and flush with the first surface A1; that is, the metal mesh 2, the metal nanowire network 3 and the transparent substrate 1 are coplanar at a first side.
In addition, as shown in fig. 2, the transparent conductive electrode further includes: the transparent conductive modification layer 4 covers the first surface A1 of the transparent substrate 1, and the metal grid 2 and the metal nanowire network 3 exposed from the first surface A1. That is to say, the transparent conductive modification layer 4 directly contacts the metal mesh 2 and the metal nanowire network 3 exposed out of the transparent substrate 1; thus, taking the use of the transparent conductive electrode in the photovoltaic cell as an example, the metal nanowire network can provide an auxiliary high-conductivity path for the lateral migration of the carriers in the transparent conductive modification layer, and the metal mesh can efficiently collect the carriers, that is, the metal mesh and the metal nanowire network promote the lateral migration and efficient collection of the carriers; thereby enabling the sheet resistance of the transparent conductive electrode to be greatly reduced.
In addition, it can be understood that, in the transparent conductive electrode provided by the application, the metal grid 2, the metal nanowire network 3 and the transparent substrate 1 are coplanar on the first side, so that the transparent conductive modification layer on the upper side of the transparent substrate 1 can be ensured to have good flatness, and the defects that the transparent conductive modification layer is out of order or generates large leakage current due to the fact that the transparent conductive modification layer is stepped or pierced due to unevenness below the transparent conductive modification layer are avoided.
In summary, in the transparent conductive electrode provided in the present application, the transparent conductive modification layer is disposed on the surface of the transparent substrate embedded with the metal mesh and the metal nanowire network, on one hand, the metal mesh and the metal nanowire network are disposed to expose on the surface of the transparent substrate and directly contact with the transparent conductive modification layer, so that the metal nanowire network can provide an auxiliary high conductive path for lateral migration of carriers to the transparent conductive modification layer, and efficiently collect the carriers through the metal mesh (taking the application of the transparent conductive electrode in a photovoltaic cell as an example), thereby effectively reducing the square resistance of the transparent conductive electrode; on the other hand, the metal grid, the metal nanowire network and the transparent substrate are arranged to be flush with the surface of one side, which is in contact with the transparent conductive modification layer, so that the defects that the transparent conductive modification layer is out of work or generates large leakage current due to steps or puncture caused by unevenness below the transparent conductive modification layer are avoided.
It can be understood here that, compare in the correlation technique that the square resistance of transparent conductive electrode is too big, need increase transparent conductive electrode's thickness and reduce its square resistance, cause transparent conductive electrode's transmittance to reduce, the transparent conductive electrode of this application is effectual to have reduced the square resistance to the transmittance of transparent conductive electrode has just also been guaranteed.
On the basis, referring to fig. 2, in order to avoid unnecessary electrical connection (for example, short circuit, etc.) between the transparent conductive electrode and other circuits or devices on the second surface A2 side in the using process of the transparent conductive electrode, in some possible implementation manners, neither the metal mesh 2 nor the metal nanowire network 3 may be exposed out of the second surface A2 of the transparent substrate 1.
Of course, according to actual requirements, if the transparent conductive electrode is required to be electrically conductive on the second surface A2, the metal mesh 2 may be disposed to expose the second surface A2, which is not specifically limited in the present application, and the following embodiments are all described by taking the example that neither the metal mesh 2 nor the metal nanowire network 3 exposes the second surface A2 of the transparent substrate 1.
The following further describes the specific arrangement of the transparent substrate 1, the metal mesh 2, the metal nanowire network 3, and the transparent conductive modification layer 4.
The transparent substrate 1 in the present application may be a flexible substrate, but is not limited thereto. In the embodiments of the present application, the transparent substrate 1 is described as an example of a flexible substrate.
The material used for the transparent substrate 1 is not limited in this application. For example, the transparent substrate 1 may be one or more of polyethylene terephthalate (PET), polyethylene naphthalate (PEN), cyclic Olefin Copolymer (COC), polyimide (PI), norland optical cement (NOA 63), polyvinyl alcohol (PVA), polydimethylsiloxane (PDMS), or polymethyl methacrylate (PMMA).
The application is not particularly limited to the metal material used for the metal grid 2. For example, the metal material used for the metal grid 2 may include one or more of copper (Cu), silver (Ag), gold (Au), aluminum (Al), nickel (Ni), and zinc (Zn), which is not limited in this application.
In addition, the shape of the mesh region of the metal mesh 2 is not limited in the present application, and may be, for example, one or a mixture of more of regular hexagons, rectangles, squares, diamonds, triangles, or other random interconnection patterns.
In some possible realisations, the thickness of the metal grid 2 is between 0.5 μm and 15 μm, i.e. the thickness of the grid of the metal grid 2 is between 0.5 μm and 15 μm; of course, the present invention is not limited thereto, and may be set as needed in practice.
In some possible implementations, the width of the metal grid 2 is 0.5 μm to 10 μm, i.e. the width of the grid forming the metal grid 2 is 0.5 μm to 10 μm; of course, the present invention is not limited thereto, and may be set as needed in practice.
In some possible implementations, the ratio of the thickness to the width of the grid of the metal grid 2 is greater than 1.
In some possible realisations, the total area of the metal grid 2 accounts for less than 20% of the total area of the transparent substrate 1; that is, the sum of the projected areas of the metal grids 2 on the transparent substrate 1 accounts for less than 20% of the total area of the transparent substrate 1; of course, the present invention is not limited thereto, and may be set as needed in practice.
The metal material used for the metal nanowire network 3 is not particularly limited, and for example, the metal material used for the metal nanowire network 3 may be gold or silver (i.e., gold nanowire network or silver nanowire network).
Schematically, taking the metal nanowire network 3 as a silver nanowire (AgNWs) network as an example, the AgNWs network may be obtained by evaporating and drying a solution containing silver nanowires (AgNWs) in a forming process, and reference may be specifically made to the method embodiments provided subsequently.
In some possible implementations, the aspect ratio of AgNWs is greater than or equal to 1000; illustratively, the length of AgNWs can be 1-200 μm, and the diameter of AgNWs is 5-100 nm; the AgNWs network may have a thickness in the range of 10nm to 100nm.
The material used for the transparent conductive modification layer 4 is not limited in this application. For example, the transparent conductive modification layer 4 may be one or more of transparent conductive oxide, transparent conductive polymer, carbon Nanotubes (CNTs), and graphene.
Illustratively, the transparent conductive oxide may be one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), antimony-doped tin oxide (ATO), gallium-doped zinc oxide (GZO), and boron-doped zinc oxide (BZO); the transparent conductive polymer may be PEDOT PSS.
In some possible implementations, the thickness of the transparent conductive modification layer 4 may be 10nm to 150nm; of course, the present invention is not limited thereto, and may be set as needed in practice.
In addition, in some possible realisations, in the transparent conductive electrode, a network of metallic nanowires 3 is embedded in a transparent substrate 1, the surface of which is covered with oxide nanoparticles.
Illustratively, in some embodiments, the oxide nanoparticles covering the surface of the metal nanowire network 3 are prepared by processing the surface of the metal nanowire network 3 with a solution containing the oxide nanoparticles, and the oxide nanoparticles in the solution can provide a capillary force in the process of solvent evaporation, so as to continuously gather on the surface of the metal nanowire network 3 and the lap joint position thereof, so that the metal nanowires are closer at the lap joint position (i.e., the node position of the metal nanowire network 3), that is, the contact resistance of the metal nanowires at the lap joint position is reduced, the conductivity of the metal nanowire network is improved, the sheet resistance of the transparent conductive electrode is reduced, and the conductivity of the transparent conductive electrode is improved.
Of course, for the specific manufacturing method of the oxide nanoparticles covered on the surface of the metal nanowire network 3, reference may be made to the manufacturing method provided in the subsequent embodiments, and details are not described here.
The specific material of the oxide nanoparticles covered on the surface of the metal nanowire network 3 is not limited in the present application, and may be selected and set as required in practice.
Illustratively, in some possible implementations, the metal oxide nanoparticles can be titanium dioxide (TiO) 2 ) Zirconium dioxide (ZrO) 2 ) Silicon dioxide (SiO) 2 ) Aluminum oxide (Al) 2 O 3 ) Zinc oxide (ZnO), tin oxide (SnO) 2 ) One or more of (a).
In some possible implementations, a conductive polymer coating (e.g., PEDOT: PSS) may be coated on the surface of the oxide nanoparticles covering the surface of the metal nanowire network 3, thereby enhancing the mechanical stability of the metal nanowire network, providing a stronger bonding force to the metal nanowire network, improving the adhesion between the metal nanowire network and the substrate, and simultaneously performing an isolation protection function on the metal nanowires.
The embodiment of the present application further provides a preparation method of a transparent conductive electrode, as shown in fig. 4, the preparation method includes:
step 01, referring to fig. 5 (a), forms a colloidal layer 11 on a substrate 10.
Of course, before the colloidal layer 11 is formed on the substrate 10, it is generally necessary to perform a process such as cleaning and drying on the substrate 10.
In the present application, the type of the substrate 10 is not limited, and may be a conductive substrate or a non-conductive substrate, and may be actually selected according to a manufacturing process (specifically, refer to a step of subsequently manufacturing the metal grid 2); the following embodiments of the present application are all schematically illustrated by taking a conductive substrate as an example of the substrate 10.
For example, the substrate 10 may be made of conductive glass such as ITO glass or FTO glass, but is not limited thereto.
Illustratively, the colloidal layer 11 may be made of photoresist, liquid photo-curable material, thermosetting material, or the like, but is not limited thereto.
In some possible implementations, the step 01 may include: a colloidal layer 11 is formed on a substrate 10 using ITO glass by spin coating a photoresist.
Specifically, the FTO conductive glass (i.e., the substrate 10) is selected, ultrasonic cleaning and drying treatment are performed on the FTO conductive glass in a detergent, deionized water, ethanol or isopropanol solution, a photoresist is spin-coated on the surface of the FTO conductive glass, the thickness of the spin-coated photoresist is at least equal to the required metal grid thickness (for example, 8 μm) after curing, and then the FTO conductive glass is heated, cured and cooled to form the colloidal layer 11.
Step 02, referring to fig. 5 (b), forming a hollow grid groove S on the colloidal layer 10 to obtain a colloidal pattern layer 11'.
The mode that forms fretwork grid slot S on colloidal layer 10 is not do the restriction in this application, can select to set up as required in the reality.
Illustratively, in some possible implementations, step 02 may include: a photoetching method or a nano-imprinting method is adopted to form a hollowed grid groove S on the colloidal layer 10, so that the conductive glass (namely the substrate 10) is exposed in the area of the grid groove S.
The shape of the mesh region where the hollowed grid grooves S are formed on the colloidal layer 10 may be set as required, and the mask pattern of the photolithography mask or the imprint pattern of the imprint template may be set as required, which is not limited in the present application. Illustratively, the mesh area of the mesh groove S may be reused in one or more forms of regular hexagon, rectangle, square, diamond, triangle or other random interconnected mesh patterns; of course, according to the actually selected manufacturing process, the cross section of the grid groove S may be in other shapes such as a trapezoid, a rectangle, a rivet shape, etc., which is not specifically limited in this application, and fig. 5 (b) is only schematically illustrated by a trapezoid.
Illustratively, in some possible implementation manners, step 02 may include performing exposure, development, cleaning, drying, and the like on the photoresist layer (i.e., the colloidal layer 11), forming a hollow grid groove S in the photoresist layer, and exposing the upper surface of the FTO conductive glass at the bottom of the grid groove S; the mesh area of the grid groove S is square, the line spacing of the square is 80 micrometers (namely the width of the mesh), the cross section of the photoresist of the mesh area is trapezoidal, the narrow side of the trapezoid is 3 micrometers, the wide side of the trapezoid is 4 micrometers, and the depth of the trapezoid is 8 micrometers.
In step 03, referring to fig. 5 (c), the metal mesh 2 is formed on the substrate in the mesh grooves S of the colloid pattern layer 11', and the colloid pattern layer 11' is removed (refer to fig. 5 (d)). Wherein, the plan view of the metal grid 2 can refer to fig. 1.
In the present application, the manner of forming the metal grid 2 on the substrate 10 located in the grid grooves S of the colloid pattern layer 11' in the step 03 is not limited.
In some possible implementations, a selective plating process may be used to form the metal mesh 2 on the substrate 10 (using a conductive substrate) within the mesh grooves S of the colloid pattern layer 11'.
Illustratively, a selective copper electroplating process may be employed to fill and level the metal copper on the upper surface of the grid trench S to form a dense copper metal grid, and the dense copper metal grid is cleaned and dried with deionized water or distilled water.
It should be understood that the width, etc. of the grid grooves S of the colloid pattern layer 11' directly determine the thickness, width, etc. of the grid of the metal grid 2 formed in step 03, therefore, in practice, the thickness of the colloid layer 11 should be controlled in step 01, and the width, depth and spacing of the grid grooves S should be designed as required in step 02 to meet the requirements of the metal grid 2. For example, in order to meet the electrical conductivity requirement of the metal grid 2, the ratio of the thickness to the width of the grid of the metal grid 2 may be set to be greater than 1.
In addition, for removing the colloid pattern layer 11 'in step 03, the colloid pattern layer 11' outside the metal grid 2 may be removed by using a process such as photolithography or etching, so that only the metal grid 2 remains on the surface of the substrate 10. For example, the remaining photoresist pattern (i.e., the colloid pattern layer 11') may be cleaned by acetone, so that the copper metal mesh is completely exposed on the surface of the FTO conductive glass, and is cleaned, dried, and the like; at this time, the substrate 10 is exposed at the mesh region C of the metal mesh 2 (see fig. 5 (d)).
Step 04, referring to fig. 5 (e), forms a metal nanowire network 3 on the substrate 10 located in the mesh area C of the metal mesh 2. Fig. 1 may be referred to as a plan view of the metal nanowire network 3.
In this application, the specific manner of forming the metal nanowire network 3 is not limited, and for example, to form the silver nanowire network, in some possible implementation manners, a solution containing the metal nanowires (AgNWs) may be filled into the mesh area C of the metal mesh 2 by a coating process, and the solvent is volatilized by processes such as air drying and heating, so as to form the silver nanowire network 3 on the substrate 10 in the mesh area C of the metal mesh 2.
The coating process used for forming the silver nanowire network may be a spray printing process, a blade coating process, a spin coating process, an inkjet printing process, and the like, which is not limited in this application. Of course, the process of filling the solution containing the nano metal wires (AgNWs) into the mesh regions C of the metal mesh 2 may include a process of treating the solution remaining on the surface of the metal mesh 2 one or more times so as to fill the remaining solution into the mesh regions C of the metal mesh 2 as completely as possible.
Illustratively, agNWs solution with an average length-diameter ratio of about 1000 (such as AgNWs with a diameter of 30nm and a length of 20-50 μm, and the solvent can be ethanol, isopropanol, etc.) can be uniformly filled in the mesh area of the copper metal mesh by a blade coating method, and the AgNWs network is formed after air drying.
Step 05, referring to fig. 5 (f), a polymer transparent film layer 1 '(i.e. the transparent substrate 1) is formed on the substrate 10 on which the metal mesh 2 and the metal nanowire network 3 are formed, so as to embed the metal mesh 2 and the metal nanowire network 3 in the polymer transparent film layer 1'.
In some possible implementation manners, a thermoplastic transparent high polymer material may be adopted, and the transparent film layer (i.e., the transparent high polymer film layer 1') completely covering the metal mesh 2 and the metal nanowire network 3 is formed by heating to a temperature higher than the glass transition temperature, and performing hot pressing and subsequent cooling treatment.
In some possible implementations, the transparent polymer film layer 1' may also be formed by curing a polymer precursor that can be dissolved in a solvent and cured after the solvent is volatilized, or by thermally curing or photocuring an uncrosslinked polymer precursor.
Illustratively, a transparent Polyimide (PI) precursor solution is coated and heated to cure, so as to obtain a transparent PI film (i.e., a polymer transparent film layer 1') covering a copper metal mesh and a silver nanowire network, and the thickness of the film is controlled to be about 50 μm.
In this case, it can be understood that the lower surfaces of the polymer transparent film layer 1', the metal mesh 2, and the metal nanowire network 3 are all in direct contact with the substrate 10, and the lower surfaces of the polymer transparent film layer 1', the metal mesh 2, and the metal nanowire network 3 are in the same plane.
Step 06, referring to fig. 5 (g), peeling the whole of the polymer transparent film layer 1', the metal mesh 2 embedded in the polymer transparent film layer 1' and the metal nanowire network 3 from the substrate 10 to obtain the transparent conductive substrate M.
It can be understood that, in the transparent conductive substrate M obtained after peeling, the metal mesh 2 and the metal nanowire network 3 are both embedded in the polymer transparent film layer 1', and at the surface a on the peeled side of the transparent conductive substrate M, the metal mesh 2 and the metal nanowire network 3 are exposed out of the polymer transparent film layer 1', and the surfaces of the polymer transparent film layer 1', the metal mesh 2 and the metal nanowire network 3 on the peeled side are coplanar.
Step 07, referring to fig. 5 (h), a transparent conductive modification layer 4 is formed on the surface a of the transparent conductive substrate M on the peeling side.
Illustratively, one or more of ITO, FTO, AZO, ATO, GZO, BZO, conductive polymers (such as PEDOT: PSS, etc.), carbon Nanotubes (CNT), graphene, etc. may be deposited on the surface a of the peeling side of the transparent conductive substrate M by a deposition process to form the transparent conductive modification layer 4, so as to obtain the composite transparent conductive electrode. The ITO, FTO, AZO, ATO, GZO, BZO, etc. may adopt deposition processes such as magnetron sputtering, electron beam evaporation, etc., and the conductive polymer (such as PEDOT: PSS, etc.), carbon Nanotube (CNT), graphene may adopt other deposition processes.
In some possible implementation manners, a 50nm ITO thin film (i.e. the transparent conductive modification layer 4) may be deposited on the surface a of the stripped side of the transparent conductive substrate M by magnetron sputtering, so as to obtain a composite transparent conductive electrode.
In summary, according to the manufacturing method of the present application, the metal mesh and the metal nanowire network are manufactured on the substrate, and then the polymer transparent film layer (i.e. the transparent substrate serving as the transparent conductive electrode) is formed, i.e. the metal mesh and the metal nanowire network are embedded into the transparent substrate by using the "reverse embedding process", on one hand, the metal mesh and the metal nanowire network can be exposed out of the surface of the transparent substrate and directly contact with the transparent conductive modification layer, so that the metal nanowire network can provide an auxiliary high conductive path for lateral migration of carriers to the transparent conductive modification layer, and the metal mesh efficiently collects the carriers (taking the application of the transparent conductive electrode in the photovoltaic cell as an example), thereby effectively reducing the sheet resistance of the transparent conductive electrode; on the other hand, under the condition that additional complex planarization process (such as chemical or mechanical polishing process) is not needed to carry out planarization treatment, the metal grid, the metal nanowire network and the transparent substrate are ensured to be coplanar on one side in contact with the transparent conductive modification layer (namely, an interface with zero step and ultralow roughness is provided), the smoothness of the transparent conductive modification layer is further ensured, and the defects that the transparent conductive modification layer is out of order or generates larger leakage current due to the fact that the lower part of the transparent conductive modification layer is uneven and has steps or is pierced are avoided.
In addition, in order to ensure that the metal nanowire network 3 formed in the step 04 is tighter at the nanowire lapping position, the contact resistance of the metal nanowires at the lapping position is also reduced, and the conductivity of the metal nanowire network is improved; a metal nanowire network 3 having a surface covered with oxide nanoparticles may be formed through step 04.
For example, in some possible implementations, a solution containing nano metal wires and oxide nanoparticles may be filled into the mesh area of the metal mesh 2 using a coating process to form the metal nanowire network 3 with the oxide nanoparticles covered on the surface on the substrate 10 of the mesh area of the metal mesh 2.
Schematically, the catalyst may contain TiO 2 The nanometer particles and AgNWs dispersion solution or sol-gel solution are processed by evaporation, drying and the like to form a TiO2 nanometer particle coated AgNWs network.
It is understood that, since the AgNWs and TiO2 nanoparticles are dried to form a film by means of a mixed solution, a very small amount of TiO2 nanoparticles may be present on the surface of the AgNWs network in contact with the substrate 10; in this case, the TiO2 nanoparticles located at the surface of the AgNWs network on the side of the lift-off surface may be removed after the lift-off process is performed in step 06; of course, the purge may not be performed.
For another example, in some possible implementation manners, the solution containing the metal nanowires may be filled into the mesh area of the metal mesh to form the metal nanowire network by using a coating process, and then the solution containing the oxide nanoparticles may be filled into the mesh area of the metal mesh by using a coating process, so as to form the metal nanowire network 3 with the surface covered with the oxide nanoparticles on the substrate 10 in the mesh area of the metal mesh 2.
Illustratively, the solution containing AgNWs may be subjected to evaporation, drying, or the like to form an AgNWs network; then, further using a catalyst containing TiO 2 And (3) processing the dispersed solution or sol-gel solution of the nano particles at a low temperature (80 ℃), drying and the like to form the AgNWs network coated by the TiO2 nano particles.
The surfaces are covered with TiO for the two types of formation 2 As for the manner of forming the AgNWs network of nanoparticles, it can be understood that the network contains TiO 2 The dispersion solution of the nano particles can provide capillary force in the solvent evaporation process, so that the capillary force is gathered on the metal nano wires and the surfaces of the metal nano wire lap joints, the metal nano wires can be more compact at the lap joints (namely, the node positions of the metal nano wire network 3), the contact resistance of the metal nano wires at the lap joints is reduced, and the conductivity of the metal nano wire network is also improved.
Of course, in some possible implementation manners, after the AgNWs network is formed, the AgNWs network may be fused at the overlapping position by heating, so as to reduce the contact resistance of the metal nanowire at the overlapping position and improve the conductivity of the metal nanowire network.
The present application also provides an electronic device comprising any one of the foregoing transparent conductive electrodes.
The electronic device is not limited in the application, and the electronic device may be a photovoltaic cell (also referred to as a solar cell), an organic light emitting diode, a touch screen, a liquid crystal display panel, a transparent electromagnetic shield, a transparent 5G antenna, or other electronic products or devices including the electronic device.
The application scene of the electronic device is not limited, and the electronic device is taken as a photocell, so that the photocell can be applied to the field of intelligent wearable equipment and other fields such as consumer electronics equipment, and the photoelectric energy collection is realized to prolong the endurance; the smart wearable device may include, but is not limited to, smart glasses, goggles, watches, bracelets, headsets, AR (augmented reality)/VR (virtual reality), and the like, and the smart consumer electronics device may include, but is not limited to, a mobile phone, a tablet, a notebook, a smart speaker, a portable smart router, and the like.
The transparent conductive electrode provided in the embodiments of the present application is further described below in conjunction with a photovoltaic cell.
As shown in fig. 6, in some possible implementations, the photovoltaic cell may include a bottom electrode E1, a first buffer layer B1, an active layer L, a second buffer layer B2, and a top electrode E2, which are sequentially stacked; of course, the photovoltaic cell may also include other components or layers, which are not limited in this application. One of the first buffer layer B1 and the second buffer layer B2 is an electron transport layer, and the other is a hole transport layer; the active layer L is a light absorbing material, such as a perovskite material or an organic material, and absorbs photons to generate electron-hole pairs.
Taking the first buffer layer B1 as an electron transport layer and the second buffer layer B2 as a hole transport layer as an example, after receiving light irradiation, the active layer L absorbs photons to be excited to generate electron-hole pairs, the electrons are transported to the bottom electrode E1 through the first buffer layer B1, the holes are transported to the top electrode E2 through the second buffer layer B2, and the bottom electrode E1 and the top electrode E2 collect charges to supply power to an external circuit.
In order to ensure that the active layer L can effectively receive the incident light, at least one of the bottom electrode E1 and the top electrode E2 may adopt the transparent conductive electrode provided in the embodiment of the present application.
For example, in some possible implementations, the bottom electrode E1 may adopt any one of the transparent conductive electrodes provided in the foregoing embodiments, and the top electrode E2 may adopt a silver thin film as a conductive electrode; for another example, in some possible implementations, the top electrode E2 may be any one of the transparent conductive electrodes provided in the foregoing embodiments, and the bottom electrode E1 may be a silver thin film as a conductive electrode; for another example, in some possible implementations, the bottom electrode E1 and the top electrode E2 may both adopt any one of the transparent conductive electrodes provided in the foregoing embodiments. Of course, as for the materials and the setting of the relevant parameters used for each film layer (e.g. B1, L, B2) located between the bottom electrode E1 and the top electrode E2 in the photovoltaic cell, reference may be made to the related art, and details are not described herein.
For example, the photocell is arranged in the intelligent glasses, the photocell can be attached to the inner side of the lens, and under the condition, external light enters the photocell after passing through the lens; for another example, the photocell may be attached to the outer side of the lens, in which case the external light is incident on the photocell first; for another example, a double-layer lens can be arranged, the photovoltaic cell is clamped between the double-layer lens, and the lens plays a certain role in protecting the photovoltaic cell; this is not particularly limited by the present application.
Through the practical detection of applying the transparent conductive electrode to the photocell, the sheet resistance of the transparent conductive electrode of some embodiments of the application can be reduced to about 0.1 omega, and the conductivity of the transparent conductive electrode is improved by about thousand times compared with that of a conventional ITO transparent electrode. Based on its high conductivity, by a wide margin the efficiency of photocell has been promoted to can satisfy single photocell to the demand of large tracts of land, and then can satisfy wearable equipment or consumer electronics equipment to pleasing to the eye demand, promoted the time of endurance simultaneously by a wide margin.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (13)

1. A transparent conductive electrode, comprising a transparent substrate, and a metal mesh, a metal nanowire network embedded in the transparent substrate; the metal nanowire network is positioned in a mesh area of the metal grid;
the transparent substrate includes a first surface in a thickness direction;
the metal grid and the metal nanowire network are exposed out of the first surface and are flush with the first surface;
the transparent conductive electrode further includes: a transparent conductive modification layer; the transparent conductive modification layer covers the first surface, the metal grid and the metal nanowire network exposed out of the first surface.
2. The transparent conductive electrode of claim 1,
the transparent substrate further comprises a second surface located opposite the first surface;
the metal grid and the metal nanowire network are not exposed out of the second surface.
3. The transparent conductive electrode according to claim 1 or 2,
the surface of the metal nanowire network embedded in the transparent substrate is covered with oxide nanoparticles.
4. The transparent conductive electrode according to any one of claims 1 to 3,
the metal nanowire network is a silver nanowire network.
5. The transparent conductive electrode according to any one of claims 1 to 4,
the transparent conductive modification layer comprises one or more of transparent conductive oxide, transparent conductive polymer, carbon nano tube and graphene.
6. The transparent conductive electrode according to any one of claims 1 to 5, wherein the transparent substrate is a flexible substrate.
7. An electronic device comprising the transparent conductive electrode according to any one of claims 1 to 6.
8. The electronic device of claim 7, wherein the electronic device comprises a photovoltaic cell; at least one electrode in the photovoltaic cell employs the transparent conductive electrode.
9. A method for preparing a transparent conductive electrode, comprising:
forming a colloidal layer on a substrate;
forming a hollow grid groove on the colloid layer to obtain a colloid pattern layer;
forming a metal grid on the substrate positioned in the grid groove of the colloid pattern layer, and removing the colloid pattern layer;
forming a metal nanowire network on the substrate located in the mesh region of the metal mesh;
forming a polymer transparent film layer on the substrate on which the metal mesh and the metal nanowire network are formed, so as to embed the metal mesh and the metal nanowire network in the polymer transparent film layer;
stripping the polymer transparent film layer, the metal grids embedded in the polymer transparent film layer and the metal nanowire networks from the substrate to obtain a transparent conductive substrate;
and forming a transparent conductive modification layer on the surface of the stripping side of the transparent conductive substrate.
10. The method for preparing a transparent conductive electrode according to claim 9,
the forming of the hollowed grid grooves on the colloid layer to obtain the colloid pattern layer comprises:
and forming a hollow grid groove on the colloid layer by adopting a photoetching method or a nano-imprinting method.
11. The method for preparing a transparent conductive electrode according to claim 9 or 10,
the forming of the metal grid on the substrate positioned in the grid groove of the colloid pattern layer comprises:
forming metal grids on the substrate in the grid grooves of the colloid pattern layer by adopting a selective electroplating process; wherein the substrate is a conductive substrate.
12. The method for producing a transparent conductive electrode according to any one of claims 9 to 11,
the forming a metal nanowire network on the substrate located at the mesh area of the metal mesh comprises:
and filling a solution containing the nano metal wires into the mesh area of the metal grid by adopting a coating process so as to form a metal nano wire network on the substrate in the mesh area of the metal grid.
13. The method for producing a transparent conductive electrode according to any one of claims 9 to 11,
the forming a metal nanowire network on the substrate located at the mesh area of the metal mesh comprises:
filling a solution containing nano metal wires and oxide nanoparticles to the mesh area of the metal grid by adopting a coating process so as to form a metal nanowire network with the surface covered with the oxide nanoparticles on the substrate in the mesh area of the metal grid;
or, firstly, filling a solution containing metal nanowires into the mesh area of the metal grid by adopting a coating process to form a metal nanowire network, and then filling a solution containing oxide nanoparticles into the mesh area of the metal grid by adopting the coating process to form the metal nanowire network with oxide nanoparticles covered on the surface on the substrate in the mesh area of the metal grid.
CN202010670908.9A 2020-07-13 2020-07-13 Transparent conductive electrode, preparation method thereof and electronic device Active CN113936844B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202010670908.9A CN113936844B (en) 2020-07-13 2020-07-13 Transparent conductive electrode, preparation method thereof and electronic device
PCT/CN2021/104086 WO2022012351A1 (en) 2020-07-13 2021-07-01 Transparent conductive electrode, preparation method therefor, and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010670908.9A CN113936844B (en) 2020-07-13 2020-07-13 Transparent conductive electrode, preparation method thereof and electronic device

Publications (2)

Publication Number Publication Date
CN113936844A CN113936844A (en) 2022-01-14
CN113936844B true CN113936844B (en) 2023-02-03

Family

ID=79273570

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010670908.9A Active CN113936844B (en) 2020-07-13 2020-07-13 Transparent conductive electrode, preparation method thereof and electronic device

Country Status (2)

Country Link
CN (1) CN113936844B (en)
WO (1) WO2022012351A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115645696A (en) * 2022-12-13 2023-01-31 山东百多安医疗器械股份有限公司 Double-cuff nerve monitoring tracheal cannula

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102103541B1 (en) * 2005-08-12 2020-04-23 캄브리오스 필름 솔루션스 코포레이션 Nanowires-based transparent conductors
US9977327B2 (en) * 2013-03-25 2018-05-22 Korea Electronics Technology Institute Photosensitive coating composition, coating conductive film using photosensitive coating composition, and method for forming coating conductive film
KR101549999B1 (en) * 2013-10-08 2015-09-07 주식회사 고려이노테크 Transparent Electrode Substrate Using Metal Nanowire
CN104795130B (en) * 2014-01-20 2017-12-05 中国科学院苏州纳米技术与纳米仿生研究所 Transparent conductive film and preparation method thereof
CN106229080B (en) * 2016-08-26 2018-01-05 华南理工大学 Low resistance electrically conducting transparent network film for flexible electronic device and preparation method thereof
KR101911603B1 (en) * 2016-09-09 2018-10-24 고려대학교 산학협력단 Metal mesh transparent electrode
CN108075040A (en) * 2016-11-07 2018-05-25 中国科学院苏州纳米技术与纳米仿生研究所 Flexible OLED base materials and preparation method thereof
CN108335781A (en) * 2018-02-11 2018-07-27 无锡博硕珈睿科技有限公司 Composite conductive thin film, preparation method, its application, product with heating film
CN108550424A (en) * 2018-03-22 2018-09-18 佛山市顺德区中山大学研究院 A kind of conductive film and the method for promoting conductive film electric conductivity
CN109285640A (en) * 2018-11-20 2019-01-29 西安交通大学 A kind of transparent conductive film and its preparation method and application
CN109890190B (en) * 2019-03-27 2021-01-19 西安交通大学 Transparent electromagnetic shielding film and preparation method thereof
CN110021462B (en) * 2019-05-17 2020-05-05 青岛五维智造科技有限公司 Manufacturing method and application of embedded metal grid flexible transparent electrode

Also Published As

Publication number Publication date
CN113936844A (en) 2022-01-14
WO2022012351A1 (en) 2022-01-20

Similar Documents

Publication Publication Date Title
US9860993B2 (en) Grid and nanostructure transparent conductor for low sheet resistance applications
US8187906B2 (en) Method for fabricating composite substances for thin film electro-optical devices
US9253890B2 (en) Patterned conductive film, method of fabricating the same, and application thereof
TWI510993B (en) Touch screen sensing module, manufacturing method thereof and display device
TWI726741B (en) Touch panel and narrow border display
TWM563063U (en) Touch panel and trace structure thereof
CN110045862B (en) Capacitive touch device and manufacturing method thereof
CN106159040B (en) A kind of method that Whote-wet method prepares flexible metal network transparency electrode
CN103824894B (en) Solar cell with reflector
US10329660B2 (en) Flexible transparent thin film
CN108885515A (en) There is the Nanowire contacts pad of enhancing adhesiveness to metal interconnection structure
CN105489784B (en) Electrode and its application prepared by the preparation method and this method of compliant conductive electrode
KR102216418B1 (en) Embedded electrode substrate for transparent light emitting device display and method for manufacturing thereof
CN113066604A (en) Conductive film and preparation method thereof
CN113936844B (en) Transparent conductive electrode, preparation method thereof and electronic device
CN104978058B (en) Circuit element and its manufacturing method
JP2016126843A (en) Functional particle arrangement sheet and manufacturing method thereof and electrophoresis display medium using the same
CN105988621A (en) Touch screen and manufacturing method thereof
CN203276888U (en) Conductive film of touch screen
CN113258006B (en) Perovskite battery structure containing grid lines and preparation method thereof
CN210142513U (en) Ultrathin composite transparent conductive film
CN106273903A (en) Composite membrane and manufacture method, touch screen
CN113126829A (en) Touch panel and manufacturing method thereof
TW201419316A (en) Transparent conductive body and preparation method thereof
TW201906187A (en) Solar cell, method for producing same, and solar cell module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant