CN113934095A - Wavelength conversion device, projector, and phosphor ceramic member - Google Patents
Wavelength conversion device, projector, and phosphor ceramic member Download PDFInfo
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- CN113934095A CN113934095A CN202110701893.2A CN202110701893A CN113934095A CN 113934095 A CN113934095 A CN 113934095A CN 202110701893 A CN202110701893 A CN 202110701893A CN 113934095 A CN113934095 A CN 113934095A
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
- G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2066—Reflectors in illumination beam
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Multimedia (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Projection Apparatus (AREA)
- Optical Filters (AREA)
- Luminescent Compositions (AREA)
Abstract
The present invention addresses the problem of providing a wavelength conversion device, a projector, and a phosphor ceramic member that have high light utilization efficiency. A wavelength conversion device (1) is used for a projector (100) and emits reflected light (L2) containing fluorescence upon receiving excitation light (L1), and comprises a substrate (10) having a light reflection surface (13), and a phosphor ceramic layer (20) which is located above the light reflection surface (13) and contains a first crystal phase having a garnet structure, wherein the visible light reflectance of the light reflection surface (13) is 95-100%, the density of the phosphor ceramic layer (20) is 97-100% of the theoretical density, and the film thickness of the phosphor ceramic layer (20) is 50 [ mu ] m or more and less than 120 [ mu ] m.
Description
Technical Field
The present invention relates to a wavelength conversion device, a projector using the same, and a phosphor ceramic member.
Background
Conventionally, a wavelength conversion device used for a projector is known.
For example, patent document 1 discloses a wavelength conversion device including a substrate having a circular shape in plan view and a phosphor layer (phosphor ceramic member) provided along the circumferential direction of the substrate, and being rotatable by a motor connected to the center of the substrate. In patent document 1, the wavelength conversion device functions as a reflective phosphor wheel in a projector, and the fluorescence emitted from the phosphor layer of the wavelength conversion device is used as light (projection light) emitted from the projector.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2019-66880
Disclosure of Invention
Problems to be solved by the invention
However, the conventional wavelength conversion device, projector, and phosphor ceramic member have a problem of low light utilization efficiency. Accordingly, the present invention provides a wavelength conversion device, a projector, and a phosphor ceramic member with high light utilization efficiency.
Means for solving the problems
A wavelength conversion device according to one embodiment of the present invention is used for a projector, receives excitation light and emits reflected light including fluorescence, and includes a substrate having a light reflection surface, and a phosphor ceramic layer located above the light reflection surface and including a first crystal phase having a garnet structure, wherein the light reflection surface has a visible light reflectance of 95% to 100%, the density of the phosphor ceramic layer is 97% to 100% of a theoretical density, and the thickness of the phosphor ceramic layer is 50 [ mu ] m or more and less than 120 [ mu ] m.
A projector according to an aspect of the present invention includes an excitation light source that emits excitation light, and the wavelength conversion device that receives the excitation light and emits reflected light including fluorescence.
A phosphor ceramic member according to an embodiment of the present invention is a phosphor ceramic member for use in a projector, including a first crystal phase having a garnet structure and a second crystal phase having a structure other than the garnet structure, wherein a density of the phosphor ceramic member is 97% to 100% of a theoretical density, and a film thickness of the phosphor ceramic member is 50 μm or more and less than 300 μm.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, a wavelength conversion device, a projector, and a phosphor ceramic member with high light utilization efficiency can be provided.
Drawings
Fig. 1 is a perspective view of a wavelength conversion device of an embodiment.
Fig. 2 is a cross-sectional view showing a cross-section of the wavelength conversion device at line II-II in fig. 1.
Fig. 3 is a perspective view showing an external appearance of the projector according to the embodiment.
Fig. 4 is a schematic diagram showing an optical system of a projector according to an embodiment.
Fig. 5A is a schematic view showing a wavelength conversion device and an aperture member of the embodiment.
Fig. 5B is a schematic diagram showing a wavelength conversion device and an aperture member of a comparative example of the embodiment.
Fig. 6 is a graph showing the evaluation results of the wavelength conversion devices of examples of the embodiment and comparative examples.
Fig. 7 is a diagram showing the evaluation results of the wavelength conversion device of the example of the embodiment.
Fig. 8 is a perspective view of a wavelength conversion device according to modification 1.
Fig. 9 is a cross-sectional view showing a cross-section of the wavelength conversion device at the line IX-IX of fig. 8.
Fig. 10 is an SEM image showing a cross section of the phosphor ceramic layer of the example of modification 1.
Fig. 11 is a graph showing the evaluation results of the wavelength conversion device of the example of modification 1.
Fig. 12 is a perspective view of a fluorescent ceramic member according to modification 2.
Description of the symbols
1 wavelength conversion device
10 base plate
11 substrate body
12 light reflecting layer
13 light reflecting surface
20 phosphor ceramic layer
30 anti-reflection layer
100 projector
121 light-scattering particles
L1 excitation light
L2 reflects light
Detailed Description
Hereinafter, a wavelength conversion device and the like according to an embodiment of the present invention will be described in detail with reference to the drawings.
The embodiments described below are all general or specific examples. The numerical values, shapes, materials, constituent elements, arrangement positions and connection modes of the constituent elements, manufacturing steps, the order of the manufacturing steps, and the like shown in the following embodiments are merely examples, and do not limit the scope of the present invention. In addition, components not described in the independent claims among the components in the following embodiments are described as optional components.
Each drawing is a schematic diagram, and is not strictly illustrated. Therefore, for example, the scales and the like in the drawings are not necessarily uniform. In the drawings, substantially the same components are denoted by the same reference numerals, and redundant description is omitted or simplified.
In the present specification, terms indicating a relationship between elements such as parallel or orthogonal, terms indicating a shape of an element such as a circle or an ellipse, and numerical ranges are not expressions only indicating strict meanings, but also expressions including substantially equivalent ranges, for example, differences of about several%.
In the present specification, the term "in plan view" refers to a case where the wavelength conversion device is viewed in a direction perpendicular to a light reflection surface of the substrate.
In the present specification, the terms "upper" and "lower" in the structure of the wavelength conversion device do not mean upper (vertically upper) and lower (vertically lower) in absolute spatial recognition, but are defined according to the relative positional relationship based on the stacking order in the stacked structure. The terms "above" and "below" are applied not only to a case where two components are disposed with a space therebetween and another component is present between the two components, but also to a case where two components are disposed in close contact with each other and the two components are in contact with each other.
In the present specification and the drawings, the x-axis, the y-axis, and the z-axis represent three axes of a three-dimensional orthogonal coordinate system. In each embodiment, two axes parallel to the light reflecting surface of the substrate are defined as an x axis and a y axis, and a direction perpendicular to the light reflecting surface is defined as a z axis direction. In the embodiments described below, the positive z-axis direction may be referred to as an upper direction, and the negative z-axis direction may be referred to as a lower direction.
(embodiment mode)
[ constitution of wavelength conversion device ]
First, the structure of the wavelength conversion device 1 of the present embodiment will be described with reference to the drawings. Fig. 1 is a perspective view of a wavelength conversion device 1 of the present embodiment. Fig. 2 is a cross-sectional view showing a cross-section of the wavelength conversion device 1 at the line II-II in fig. 1.
As shown in fig. 1 and 2, the wavelength conversion device 1 includes a substrate 10 having a light reflecting surface 13, a phosphor ceramic layer 20, and an antireflection layer 30.
In the present embodiment, the wavelength conversion device 1 is a phosphor wheel that is used in a projector, receives the excitation light L1, and emits reflected light including fluorescence. The wavelength conversion device 1 has a disk shape, and a motor 4 for driving the wavelength conversion device 1 to rotate is provided at the center of the wavelength conversion device 1 in a plan view. Therefore, the wavelength conversion device 1 is rotationally driven by the motor 4 in the direction of the arrow shown in fig. 1 along the axis by the motor 4.
Although fig. 1 shows the structure of the phosphor wheel provided with the motor 4, the wavelength conversion device 1 may not include the motor 4. That is, the wavelength conversion device 1 may be a fixed device that is not rotationally driven. With such a configuration, the wavelength conversion device 1 becomes small, and therefore a compact projector can be provided.
The phosphor ceramic layer 20 is a layer located above the light reflecting surface 13 of the substrate 10. In the present embodiment, the wavelength conversion device 1 is a phosphor wheel, and thus the phosphor ceramic layer 20 is a phosphor ring. The phosphor ceramic layer 20 is annularly provided on a circumference having a distance equal to the rotational center of the wavelength conversion device 1 (i.e., a position where the motor 4 is provided). That is, the phosphor ceramic layer 20 is provided in a band shape along the circumferential direction in a plan view.
The phosphor ceramic layer 20 includes a first crystal phase having a garnet structure. More specifically, in the present embodiment, the phosphor ceramic layer 20 is composed only of the first crystal phase having the garnet structure. That is, the phosphor ceramic layer 20 of the present embodiment does not contain a crystal phase having a structure different from the garnet structure. The garnet structure is represented by A3B2C3O12A crystal structure represented by the general formula (1). As the element A, rare earth elements such as Ca, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Lu are suitable; as the element B, Mg, Al, Si, Ga, Sc and the like are suitable; as the element C, elements such as Al, Si and Ga are suitable. Examples of such garnet structures include: YAG (Yttrium Aluminum Garnet), LuAG (Lutetium Aluminum Garnet), Lu2CaMg2Si3O12Lutetium-Calcium-Magnesium-Silicon-Garnet (Lutetium Calcium Magnesium Silicon Garnet)) and TAG (Terbium Aluminum Garnet). In the present embodiment, the phosphor ceramic layer 20 is composed of (Y)1-xCex)3Al2Al3O12(i.e., (Y)1-xCex)3Al5O12) The first crystal phase is YAG, and x is 0.001-0.1.
Further, the first crystal phase constituting the phosphor ceramic layer 20 may be a solid solution of a plurality of garnet crystal phases different in chemical composition. Such a solid solution may be represented by (Y)1-xCex)3Al2Al3O12Crystal phase of garnet represented by (Lu)1- dCed)3Al2Al3O12(0.001. ltoreq. d < 0.1) in a solid solution of a garnet crystal phase ((1-a) (Y)1-xCex)3Al5O12-a(Lu1-dCed)3Al2Al3O12(a is more than 0 and less than 1)), (x is more than or equal to 0.001 and less than 0.1). In addition, as such a solid solutionIncludes (Y)1-xCex)3Al2Al3O12Crystal phase of garnet represented by (Lu)1-zCez)2CaMg2Si3O12A solid solution of garnet crystal phases ((1-b) (Y) shown1-xCex)3Al2Al3O12-b(Lu1-zCez)2CaMg2Si3O12(b is more than 0 and less than 1)), (x is more than or equal to 0.001 and less than 0.1), (z is more than or equal to 0.0015 and less than 0.15) and the like. When the phosphor ceramic layer 20 is made of a solid solution of a plurality of garnet crystal phases having different chemical compositions, the fluorescence spectrum of the fluorescence emitted from the phosphor ceramic layer 20 is further broadened, and the green light component and the red light component are increased. Therefore, a projector that emits projection light having a wide color gamut can be provided.
The first crystal phase constituting the phosphor ceramic layer 20 may have a chemical composition corresponding to the above general formula a3B2C3O12The indicated crystal phases deviate from the crystal phases. Such a crystalline phase includes (Y) and (Y)1-xCex)3Al2Al3O12The crystal phase shown is Al-rich (Y)1-xCex)3Al2+δAl3O12(0.001. ltoreq. x < 0.1) (δ is a positive number). Further, as such a crystal phase, there can be mentioned a crystal phase consisting of (Y)1-xCex)3Al2Al3O12The crystal phase shown is rich in Y (Y)1-xCex)3+ζAl2Al3O12And (x is 0.001. ltoreq. x < 0.1) (zeta is a positive number). The chemical composition of these crystalline phases is relative to the chemical composition of formula A3B2C3O12The indicated crystal phase deviates, but the garnet structure is maintained. Since the phosphor ceramic layer 20 is made of a crystal phase having a different chemical composition, a region having a different refractive index is generated in the phosphor ceramic layer 20, and thus the excitation light L1 and the fluorescence are further scattered, and the light emitting area of the phosphor ceramic layer 20 becomes smaller. Therefore, a wavelength converter with a smaller etendue and a higher efficiency of light utilization can be providedPiece 1 and a projector.
Further, the phosphor ceramic layer 20 may also contain a first crystal phase and a hetero-phase having a structure other than a garnet structure. By making the phosphor ceramic layer 20 have such a first crystal phase and a different phase, a region having a different refractive index is generated in the phosphor ceramic layer 20, and thus the excitation light L1 and the fluorescence are further scattered, and the light emitting area of the phosphor ceramic layer 20 becomes smaller. Therefore, the wavelength conversion device 1 and the projector having a smaller etendue and higher light use efficiency can be provided.
The phosphor ceramic layer 20 made of YAG receives light incident from above the wavelength conversion device 1 as excitation light L1 and emits fluorescence. More specifically, when light emitted from an excitation light source described later is irradiated to the phosphor ceramic layer 20 as excitation light L1, fluorescence is emitted as wavelength-converted light from the phosphor ceramic layer 20. That is, the wavelength-converted light emitted from the phosphor ceramic layer 20 is light having a wavelength longer than the wavelength of the excitation light L1.
In the present embodiment, the wavelength converted light emitted from the phosphor ceramic layer 20 includes fluorescence as yellow light. The phosphor ceramic layer 20 absorbs light having a wavelength of 380nm to 490nm, for example, and emits fluorescence as yellow light having a fluorescence peak wavelength in a region having a wavelength of 490nm to 580 nm. By forming the phosphor ceramic layer 20 of YAG, it is possible to easily realize the phosphor ceramic layer 20 that emits fluorescence having a fluorescence peak wavelength in a wavelength range of 490nm to 580 nm.
The x-coordinate of the chromaticity diagram of the wavelength-converted light emitted from the phosphor ceramic layer 20 may be 0.415 or less, more preferably 0.410 or less, and still more preferably 0.408 or less. If the x-coordinate of the chromaticity diagram of the wavelength-converted light emitted from the phosphor ceramic layer 20 is the above-mentioned numerical value, the temperature quenching of the phosphor ceramic layer 20 becomes small, and therefore, the phosphor ceramic layer 20 having high emission efficiency can be realized.
The density of the phosphor ceramic layer 20 may be 95% to 100% of the theoretical density, and more preferably 97% to 100% of the theoretical density. Here, the theoretical density refers to a density in a case where atoms in a layer are set to be ideally aligned. In other words, the theoretical density is a density assuming that there is no void in the phosphor ceramic layer 20, and is a value calculated using a crystal structure. For example, when the density of the phosphor ceramic layer 20 is 99%, the remaining 1% corresponds to voids. That is, the higher the density of the phosphor ceramic layer 20, the fewer the voids. If the density of the phosphor ceramic layer 20 is in the above range, the amount of total fluorescence emitted from the phosphor ceramic layer 20 increases, and therefore, the wavelength conversion device 1 and the projector that emit a larger amount of light can be provided.
In addition, the density of the phosphor ceramic layer 20 may be 4.32g/cm3～4.55g/cm3More preferably 4.41g/cm3～4.55g/cm3. As shown in the present embodiment, when the phosphor ceramic layer 20 is made of YAG, if the density of the phosphor ceramic layer 20 is in the above range, the density of the phosphor ceramic layer 20 is 95% to 100% and 97% to 100% of the theoretical density of each. When the density of the phosphor ceramic layer 20 is in the above range, the excitation light L1 absorbed by the phosphor ceramic layer 20 can be efficiently converted into fluorescence. That is, the phosphor ceramic layer 20 having high emission efficiency can be realized.
The thickness (length in the z-axis direction) of the phosphor ceramic layer 20 is preferably 50 μm or more and less than 150 μm, and more preferably 50 μm or more and less than 120 μm. The thickness of the phosphor ceramic layer is more preferably 70 μm or more and less than 120 μm, and still more preferably 80 μm or more and less than 110 μm.
Further, the antireflection layer 30 is located above the phosphor ceramic layer 20.
The antireflection layer 30 is a layer that prevents, more specifically, suppresses reflection of the excitation light L1. The antireflection layer 30 reduces the reflectance of the excitation light L1 in the wavelength conversion device 1 and increases the amount of the excitation light L1 that reaches the phosphor ceramic layer 20. As a result, the amount of excitation light L1 that can be absorbed by the phosphor ceramic layer 20 also increases, and therefore the amount of fluorescence that is emitted by the phosphor ceramic layer 20 also increases. That is, by providing the antireflection layer 30, the amount of fluorescence emitted from the phosphor ceramic layer 20 increases.
The antireflection layer 30 may be made of, for example, a dielectric film or a film having a wavelength smaller than that of light in the visible light regionA periodic fine uneven structure (so-called moth-eye structure) or the like. In the case where the antireflection layer 30 is composed of a dielectric film, the antireflection layer 30 may contain an inorganic compound. In this case, the anti-reflection layer 30 contains a material selected from SiO2、TiO2、Al2O3、ZnO、Nb2O5And MgF, and the like.
Although fig. 1 and 2 show a structure in which the antireflection layer 30 is provided, the wavelength conversion device 1 may not include the antireflection layer 30.
The substrate 10 is a disk-shaped plate material, which is a base material supporting the phosphor ceramic layer 20 and the antireflection layer 30. The motor 4 is provided at the center of the lower substrate 10 in a plan view. As shown in fig. 2, the substrate 10 has a substrate body 11 and a light reflection layer 12.
The substrate body 11 may be made of a material having high thermal conductivity. For example, the substrate body 11 may be made of a material having higher thermal conductivity than the phosphor ceramic layer 20, but is not limited thereto. The substrate body 11 may exemplify, for example: a glass substrate, a quartz substrate, a GaN substrate, a sapphire substrate, a Si substrate, a metal substrate, and the like. The substrate body 11 may be made of a resin such as a PEN (polyethylene naphthalate) film or a PET (polyethylene terephthalate) film. When the substrate body 11 is a metal substrate, the substrate body 11 is made of a metal material such as Al, Fe, and Ti.
In the present embodiment, the substrate main body 11 is a metal substrate made of Al. Al has high thermal conductivity and is lightweight, and therefore, it is possible to improve the heat radiation property of the substrate main body 11 and reduce the weight of the substrate main body 11. The thickness of the substrate body 11 is, for example, 1.5mm or less.
The substrate 10 has a light reflecting surface 13. The light reflecting surface 13 is a surface of the substrate 10 on the side of the phosphor ceramic layer 20. In the present embodiment, the light reflecting surface 13 is formed of a surface included in the light reflecting layer 12.
The light reflecting surface 13 is a surface that reflects the fluorescence emitted from the phosphor ceramic layer 20. The light reflecting surface 13 also reflects the excitation light L1 that is not converted into fluorescence in the phosphor ceramic layer 20. The light reflecting surface 13 reflects the fluorescence and the excitation light L1 not converted into fluorescence upward. In the present embodiment, since the fluorescence and excitation light L1 is light in the visible light range, the higher the visible light reflectance of the light reflecting surface 13, the less the light loss. Specifically, the visible light reflectance of the light reflecting surface 13 may be 90% to 100%, and more preferably 95% to 100%. If the visible light reflectance of the light reflecting surface 13 is in the above range, the fluorescence and excitation light L1 is reflected further upward, and therefore, the guiding of the fluorescence and excitation light L1 in the lateral direction (i.e., in the direction parallel to the light reflecting surface 13) can be suppressed, and the light emitting area becomes smaller. Therefore, the wavelength conversion device 1 and the projector having a smaller etendue and higher light use efficiency can be provided. The reflectance of the light in the 490 to 780nm wavelength region of the light reflecting surface 13 may be 90 to 100%, and more preferably 95 to 100%. If the reflectance of the light in the 490 to 780nm wavelength region of the light reflecting surface 13 is in the above range, the fluorescence can be reflected further upward, and therefore the guiding of the fluorescence to the lateral direction can be suppressed, and the light emitting area becomes smaller. Therefore, the wavelength conversion device 1 and the projector having a smaller etendue and higher light use efficiency can be provided. In the present embodiment, the visible light region refers to a wavelength region having a wavelength of 380nm to 780 nm.
The light reflecting layer 12 may be made of any material as long as it can reflect fluorescent light and excitation light L1 not converted into fluorescent light upward. In the present embodiment, the light reflecting layer 12 is a composite layer composed of the light scattering particles 121 and the binder 122 in which the light scattering particles 121 are dispersed. That is, the light reflecting layer 12 has light diffusibility (light scattering property), and reflects fluorescent light and excitation light L1 not converted into fluorescent light upward by the light diffusion.
The light reflecting layer 12 diffuses light by the difference in refractive index between the light scattering particles 121 and the binder 122. The light scattering particles 121 are, for example, fillers or white particles made of an inorganic compound or a resin material. More specifically, the light scattering particles 121 may be SiO2、TiO2、Al2O3、ZnO、Nb2O5、ZrO2And CaCO3Inorganic compounds such asThe resin material is a styrene resin or an acrylic resin. The adhesive 122 may be made of a resin material such as an acrylic resin or a silicone resin having light transmittance.
The provision of the light reflection layer 12 can improve the visible light reflectance of the light reflection surface 13. Further, the light reflection layer 12 is formed of a composite layer containing the light scattering particles 121, whereby the visible light reflectance of the light reflection surface 13 can be further improved. That is, the loss of light in the wavelength conversion device 1 can be further suppressed.
The light reflecting layer 12 may be a metal layer made of a metal having light reflectivity. For example, the metal is an alloy containing Ag, Al, or any of them. As for the light reflection layer 12, it can be formed by subjecting the metal to a dry process or a wet process. Even in such a case, the same operational effect as in the case where the light reflecting layer 12 is formed of a composite layer including the light scattering particles 121 is expected.
Further, a bonding layer may be provided between the light reflecting layer 12 and the phosphor ceramic layer 20. With such a configuration, the light reflecting layer 12 and the phosphor ceramic layers 20 are further closely adhered, and therefore, heat generated in the phosphor ceramic layers 20 can be more efficiently conducted to the substrate body 11 through the light reflecting layer 12. Therefore, the wavelength conversion device 1 with less temperature quenching of the phosphor ceramic layer 20 and high efficiency can be provided. The bonding layer may be formed of a transparent material such as a silicone resin or an epoxy resin. The thickness of the bonding layer may be 1 μm or more and less than 100 μm, and preferably 1 μm or more and less than 20 μm.
Although fig. 1 and 2 show a configuration in which the light reflection layer 12 is provided, the wavelength conversion device 1 may not include the light reflection layer 12. In this case, the surface of the substrate body 11 serves as a light reflecting surface 13.
[ constitution of projector ]
The wavelength conversion device 1 configured as described above is used in the projector 100 shown in fig. 3 and 4. Fig. 3 is a perspective view showing an external appearance of the projector 100 according to the present embodiment. Fig. 4 is a schematic diagram showing an optical system of the projector 100 according to the present embodiment. Hereinafter, the configuration of the projector 100 according to the present embodiment will be described with reference to fig. 3 and 4.
As shown in fig. 3 and 4, the projector 100 of the present embodiment includes a light source 3, a dichroic mirror 5, a wavelength conversion device 1, a display element 6, a projection optical member 7, and a reflection mirror 8.
The light source 3 is, for example, a semiconductor laser light source or an led (light Emitting diode) light source, and is driven by a drive current to emit light of a predetermined color (wavelength).
In the present embodiment, the light source 3 is a semiconductor laser light source. The semiconductor laser element provided in the light source 3 is, for example, a GaN semiconductor laser element (laser chip) made of a nitride semiconductor material. In the present embodiment, the light source 3 as a semiconductor laser light source is a multi-chip type light emitting device.
As an example, the light source 3 emits laser light in a range from near ultraviolet to blue having a peak wavelength of 380nm to 490 nm. More specifically, the light source 3 emits blue light having a peak wavelength of 445 nm. The light source 3 of the present embodiment is an example of an excitation light source. The laser light emitted from the light source 3 reaches the dichroic mirror 5.
The dichroic mirror 5 is arranged at an angle of 45 degrees with respect to the optical axis of the light source 3. The dichroic mirror 5 of the present embodiment is a dichroic mirror that transmits part of the blue light and reflects the other part thereof, and transmits the yellow fluorescent light.
That is, the dichroic mirror 5 has a characteristic of reflecting and transmitting light in a wavelength region of the laser light emitted from the light source 3. Therefore, a part of the laser beam emitted from the light source 3 is transmitted through the dichroic mirror 5 without changing its traveling direction, and the other part of the laser beam is reflected by the dichroic mirror 5 and changes its traveling direction by 90 ° to be directed toward the wavelength conversion device 1.
Here, the other part of the laser light emitted from the light source 3 reaches the wavelength conversion device 1 as the excitation light L1. The wavelength conversion device 1 receives the excitation light L1 and emits reflected light L2 including fluorescence. More specifically, the reflected light L2 includes light that has been wavelength-converted and reflected by the phosphor ceramic layer 20 and the light reflecting surface 13 of the wavelength conversion device 1, respectively. More specifically, the reflected light L2 is light including yellow-based fluorescence generated in the phosphor ceramic layer 20 and excitation light L1 as blue light that is not converted into fluorescence in the phosphor ceramic layer 20. However, since the ratio of the fluorescence to the reflected light L2 is high, the reflected light L2 is yellow light.
The laser light transmitted from the dichroic mirror 5 without changing the traveling direction reaches the reflecting mirror 8 as transmitted light L12, and is specularly reflected by the reflecting mirror 8 toward the other surface of the dichroic mirror 5. The transmitted light L12 is reflected by the other surface of the dichroic mirror 5, changes its traveling direction by 90 °, and goes toward the display device 6.
Further, the reflected light L2 reaches the dichroic mirror 5. At this time, the dichroic mirror 5 is disposed at an angle of 45 degrees with respect to the optical axis of the reflected light L2, and transmits the yellow fluorescent light. Therefore, the traveling direction of the reflected light L2 that has reached the dichroic mirror 5 does not change.
Thereby, as shown in fig. 4, the optical axis of the reflected light L2 and the optical axis of the transmitted light L12 are aligned and directed toward the display element 6. At this time, since the reflected light L2 is yellow light and the transmitted light L12 is blue light, the combined light is white light. That is, the light directed from the dichroic mirror 5 toward the display element 6 is white light.
White light, which is a mixture of the reflected light L2 and the transmitted light L12, is directed toward the display element 6. Here, if the reflected light L2 is light having a large etendue, the size of the reflected light L2 irradiated on the display element 6 becomes larger than the size of the display element 6. Therefore, the number of ineffective (i.e., unusable) light components not irradiated to the display element 6 increases.
The display element 6 is a substantially planar element that controls light (white light) passing through the opening 2a and outputs the light as an image. In other words, the display element 6 generates light for image. The display element 6 is specifically a DLP (Digital Light processor) having a DMD (Digital Micromirror Device). The display element 6 may be a reflective liquid crystal panel, for example. Further, a fly-eye lens, a polarization conversion element, a mirror lever, and the like may be provided between the display element 6 and the dichroic mirror 5.
The light for an image generated by the display device 6 is converted into projection light for enlarging and projecting onto a screen by the projection optical member 7.
In the case of the projector 100, only light irradiated to the display element 6 is utilized as projection light. That is, the smaller the etendue of the reflected light L2, the more light is available as projection light of the projector 100.
[ light behavior in wavelength conversion device ]
Here, the optical behavior in the wavelength conversion device 1 will be described using the present embodiment and comparative example.
Fig. 5A is a schematic diagram showing the wavelength conversion device 1 and the aperture member 2 of the present embodiment. Fig. 5B is a schematic diagram showing a wavelength conversion device 1x and an aperture member 2 of a comparative example of the present embodiment. Here, for convenience, the description will be made using the aperture member 2, the wavelength conversion devices 1 and 1x, the excitation light L1, and the reflected light L2.
Here, the diaphragm member 2 is a member for evaluating the magnitude of the etendue of the reflected light L2. The diaphragm member 2 absorbs light and has an opening 2a at the center of the diaphragm member 2. It is considered that if the ratio of the light component passing through the opening 2a of the diaphragm member 2 is relatively large, the etendue of the reflected light L2 is small.
The wavelength conversion device 1x of the comparative example has the same configuration as the wavelength conversion device 1 of the present embodiment except that the thickness of the phosphor ceramic layer 20x is thicker (e.g., 200 μm) than the phosphor ceramic layer 20 of the present embodiment.
The density of the phosphor ceramic layers 20 and 20x was 4.41g/cm3～4.55g/cm3And the density is high. That is, since the phosphor ceramic layers 20 and 20x have few voids and hardly cause light scattering, light easily advances in the planar direction of the layers (i.e., the x-axis direction or the y-axis direction), and so-called light guiding is easily caused.
First, the wavelength conversion device 1 of the present embodiment will be described with reference to fig. 5A.
If the thickness is sufficiently thin (50 μm to 120 μm) as in the phosphor ceramic layer 20 of the present embodiment, the distance D in the planar direction (x-axis direction in this case) of the layer from the incidence of the excitation light L1 to the emission of the reflected light L2 can be further shortened. In other words, in the present embodiment, the light emitting area (light emitting spot diameter) of the fluorescence of the phosphor ceramic layer 20 is sufficiently small. Therefore, as shown in fig. 5A, the reflected light L2 reflected by the light reflecting surface 13 and emitted from the phosphor ceramic layer 20 easily passes through the opening 2a of the diaphragm member 2. As described above, the light passing through the opening 2a can be used as light for enlarging the light projected onto the screen via the display element 6 and the projection optical member 7.
That is, in the present embodiment, since the phosphor ceramic layer 20 included in the wavelength conversion device 1 is sufficiently thin, the light emitting area of the fluorescence can be sufficiently reduced. Therefore, the amount of light passing through the opening 2a of the diaphragm member 2 is large, and the amount of light that can be used as projection light of the projector 100 is large. That is, with the above configuration, the wavelength conversion device 1 having high light use efficiency can be realized. Further, by providing such a wavelength conversion device 1, the projector 100 having high light use efficiency can be realized.
Next, a wavelength conversion device 1x of a comparative example will be described with reference to fig. 5B.
If the thickness is sufficiently large (200 μm) as in the phosphor ceramic layer 20x of the comparative example, the distance Dx in the plane view direction of the layer from the incidence of the excitation light L1 to the emission of the reflected light L2x becomes longer. In other words, in the comparative example, the light emitting area (light emitting spot diameter) of the fluorescence of the phosphor ceramic layer 20x is increased. Therefore, as shown in fig. 5B, the reflected light L2x reflected by the light reflecting surface 13 and emitted from the fluorescent ceramic layer 20x is easily cut off by the diaphragm member 2. Therefore, the wavelength conversion device 1x of the comparative example has low light use efficiency.
As described above, in the present embodiment, the visible light reflectance of the light reflecting surface 13 can be further improved by providing the light reflecting layer 12 and further forming the light reflecting layer 12 of a composite layer containing the light scattering particles 121. This can further suppress light loss in the wavelength conversion device 1, and thus can realize the wavelength conversion device 1 with high light use efficiency.
Examples
Here, the manufacturing method and the light use efficiency in the wavelength conversion devices of examples 1 to 3 and comparative example of the present embodiment will be described.
First, a method for producing a phosphor ceramic layer is described.
The phosphor ceramic layers of examples 1 to 3 and comparative example were all composed of (Y)0.9953Ce0.0047)3Al5O12The first crystal phase shown. In addition, the phosphor ceramic layers of examples 1 to 3 and comparative example are all made of Ce3+Activating the phosphor.
The phosphor ceramic layers of examples 1 to 3 and comparative examples used the following three compound powders as raw materials. Specifically, use Y2O3(Yttrium oxide, purity 3N, Nippon Yttrium Co., Ltd.) and Al2O3(alumina, purity 3N, Sumitomo chemical Co., Ltd.) and CeO2(cerium oxide, purity 3N, Nippon Yttrium Co., Ltd.).
First, a compound (Y) having a stoichiometric composition0.9953Ce0.0047)3Al5O12The above raw materials were weighed. Subsequently, the weighed raw materials and alumina balls (diameter: 10mm) were put into a plastic pot. The amount of the alumina balls was about 1/3 times the volume of the plastic can. Then, pure water was charged into a plastic tank, and the raw material was mixed with pure water by a tank rotator (manufactured by Nikko chemical Co., Ltd., BALL MILL ANZ-51S). The mixing was carried out for 12 hours. Thus, a slurry-like mixed raw material was obtained.
The slurry-like mixed raw material was dried using a dryer. Specifically, a sheet of Naflon (registered trademark) was laid so as to cover the inner wall of the metal barrel, and the mixed raw material was poured over the sheet of Naflon (registered trademark). The metal barrel, the Naflon (registered trademark) sheet and the mixed raw material were treated with a drier set at 150 ℃ for 8 hours and dried. Thereafter, the dried mixed raw material was recovered, and the mixed raw material was granulated by a spray drying apparatus. In addition, polyvinyl alcohol is used as a binder (binder) in the granulation.
Just after granulationThe raw materials were mixed and temporarily molded into a cylindrical shape by an electric hydraulic press (EMP-5, manufactured by Milliki Seisaku-Sho Ltd.) and a cylindrical mold (outer diameter: 58mm, inner diameter: 38mm, height: 130 mm). The pressure during molding was set to 5MPa/cm2. Next, the molded body after the temporary molding was subjected to main molding by a cold isostatic pressing apparatus. The pressure during the primary molding was set to 300 MPa. In addition, the molded body after the main molding is subjected to a heat treatment (binder removal treatment) for the purpose of removing a binder (binder) used in the granulation. The temperature of the heat treatment was set to 500 ℃. The time for the heat treatment was set to 10 hours.
The molded article after the heat treatment was fired in a tubular atmosphere furnace. The firing temperature was set to 1675 ℃. The firing time was set to 4 hours. The firing atmosphere is a mixed gas atmosphere of nitrogen and hydrogen. The outer diameter and the inner diameter of the fired material after firing were 43mm and 29mm, respectively.
The fired cylindrical material was sliced using a multi-wire saw. The thickness of the cylindrical fired product after slicing was set to about 700 μm.
The sliced fired material was polished with a polishing apparatus to adjust the thickness of the fired material. By this adjustment, the fired product becomes a phosphor ceramic layer. The thickness of the phosphor ceramic layer was 53 μm in example 1, 75 μm in example 2, 106 μm in example 3, and 206 μm in comparative example.
The outer and inner diameters of the phosphor ceramic layers of examples 1 to 3 and comparative example were 43mm and 29mm, respectively. The phosphor ceramic layers of examples 1 to 3 and comparative examples were dark yellow.
Next, evaluation of the phosphor ceramic layer will be described.
First, the densities of the phosphor ceramic layers of examples 1 to 3 and comparative example were evaluated by the archimedes method. The density of the phosphor ceramic layers of examples 1 to 3 and comparative example was 4.49g/cm3. In addition, the density of the phosphor ceramic layer of each of examples 1 to 3 and comparative examples was Y3Al5O12Theoretical density of (4.55 g/cm)3) 98.7 percent of the total weight. That is, the density of the phosphor ceramic layers of examples 1 to 3 and comparative example was Y3Al5O1297 to 100 percent of the theoretical density.
Next, a method for manufacturing the wavelength conversion device is described.
First, a disk-shaped substrate body (50 mm in diameter and 0.5mm in thickness) of Al was prepared. Next, TiO was coated and dispersed on the substrate body in a circular shape (outer diameter of 46mm, inner diameter of 30mm) by using a dispenser2A light reflective layer of a silicone resin of particles. Here, the silicone resin included in the light reflecting layer also functions as an adhesive for bonding the phosphor ceramic layer to the substrate main body.
Thereafter, the phosphor ceramic layer is disposed so as to overlap the circularly applied light reflecting layer. Here, the phosphor ceramic layer was fixed by a metal jig so that the thickness of the light reflecting layer became about 50 μm. Thereafter, the light reflective layer is cured by heat treatment using a dryer. The temperature of the heat treatment at this time was set to 150 ℃. The light-reflecting surface, which is one surface included in the light-reflecting layer, has a visible light reflectance of 95% or more.
In this way, the wavelength conversion devices of examples 1 to 3 and comparative examples, which were provided with the phosphor ceramic layers of examples 1 to 3 and comparative examples and the substrate, were obtained.
Further, evaluation of the wavelength conversion device will be described.
The wavelength conversion devices of examples 1 to 3 and comparative example were evaluated using an evaluation apparatus for a reflection laser excitation type wavelength conversion device. Specifically, in this evaluation apparatus, excitation light (laser light) is irradiated to a rotating wavelength conversion device, and the fluorescence energy of fluorescence emitted from the wavelength conversion device is evaluated by a power meter. Wavelength, output and irradiation spot diameter (1/e) of laser2) The values were set at 455nm, 70W and 1.2 mm. Further, the laser is a gaussian beam. In addition, the rotation speed of the wavelength conversion device was set to 7200 rpm. The evaluation device is provided with a cut-offAn aperture member for emitting a part of the fluorescence emitted from the wavelength conversion device. In this case, for example, the distance between the wavelength conversion device and the diaphragm member is 3mm to 100mm, and the aperture diameter of the aperture of the diaphragm member is 5mm to 10 mm.
Fig. 6 is a graph showing the evaluation results of the wavelength conversion devices of examples 1 to 3 and comparative example of the present embodiment. Specifically, fig. 6 shows the relative fluorescence energy values (after passing through the opening), the relative fluorescence energy values (before passing through the opening), and the coupling efficiencies of the wavelength conversion devices of examples 1 to 3 and comparative example.
Here, the fluorescence energy relative value (after passing through the aperture) refers to a relative value of fluorescence energy of fluorescence emitted from each wavelength conversion device after passing through the aperture of the aperture member. The fluorescence energy of the fluorescence emitted from the wavelength conversion device of the comparative example after passing through the opening was set to 100%.
The fluorescence energy relative value (before passing through the aperture) is a relative value of fluorescence energy of fluorescence emitted from each wavelength conversion device before passing through the aperture of the aperture member. The fluorescence energy of the fluorescence emitted from the wavelength conversion device of the comparative example after passing through the opening was set to 100%.
The coupling efficiency is a ratio of a fluorescence energy relative value (after passing through the opening) to a fluorescence energy relative value (before passing through the opening). That is, the coupling efficiency is a value obtained by dividing the fluorescence energy relative value (after passing through the opening) by the fluorescence energy relative value (before passing through the opening).
In the projector, the fluorescent light passing through the opening is used as a part of the projection light. That is, it is considered that the larger the relative value of fluorescence energy (after passing through the opening), the more fluorescence can be used as projection light of the projector.
As shown in fig. 6, the coupling efficiencies of the wavelength conversion devices of example 1, example 2, example 3, and comparative example were 85%, 86%, 84%, and 81%, respectively. That is, the coupling efficiency in the examples was higher than that in the comparative example. The higher the coupling efficiency, the more light passes through the opening among the generated fluorescence, that is, the smaller the light emitting area of the fluorescence emitted from the wavelength conversion device as shown in fig. 5A and 5B. That is, it is shown that the light emitting area of the fluorescence emitted by the wavelength conversion devices of examples 1 to 3 is smaller than that of the fluorescence emitted by the wavelength conversion device of comparative example, and the light utilization efficiency of the wavelength conversion devices of examples is higher.
Further, as shown in FIG. 6, it is apparent that the phosphor ceramic layers of examples 1 to 3 have a thickness in the range of 50 μm to 120 μm, and thus have sufficiently high coupling efficiency as compared with the comparative example. That is, by setting the thickness of the phosphor ceramic layer 20 of the present embodiment to a range of 50 μm to 120 μm, the wavelength conversion device 1 having high light utilization efficiency can be realized.
The relative fluorescence energy values (after passing through the opening) of the wavelength conversion devices of examples 1, 2, 3, and comparative examples were 103%, 106%, 105%, and 100%, respectively. That is, the fluorescence energy relative values (after passing through the openings) in any of examples 1 to 3 were higher than those in the comparative examples. In examples 1 to 3, the relative fluorescence energy values (after passing through the openings) were higher for the wavelength conversion devices of example 2 in which the thickness of the phosphor ceramic layer was 76 μm and example 3 in which the thickness of the phosphor ceramic layer was 106 μm.
As shown in fig. 6, it is apparent that the phosphor ceramic layers of examples 2 and 3 have a sufficiently higher fluorescence energy relative value (after passing through the opening) than the comparative example by setting the thickness to a range of 70 μm to 120 μm. That is, by setting the thickness of the phosphor ceramic layer 20 of the present embodiment to a range of 70 μm to 120 μm, the wavelength conversion device 1 having higher light utilization efficiency can be realized.
Further, the relative fluorescence energy values (before passing through the opening) of the wavelength conversion devices of example 1, example 2, example 3, and comparative example were 121%, 124%, 125%, and 124%, respectively. The relative value of fluorescence energy (before passing through the opening) of the wavelength conversion device of example 1 in which the thickness of the phosphor ceramic layer was the thinnest 53 μm was lower than that of the wavelength conversion devices of examples 2 and 3 and comparative example. The reason is considered to be that: in the wavelength conversion device of example 1, since the phosphor ceramic layer is thin, the phosphor ceramic layer cannot sufficiently absorb the laser light.
Here, a manufacturing method and light use efficiency in the wavelength conversion device of example 4 of this embodiment will be further described.
First, a method for manufacturing a phosphor ceramic layer provided in a wavelength conversion device according to example 4 of the present embodiment is described.
The phosphor ceramic layers of example 4 were all composed of (Y)0.997Ce0.003)3Al5O12The first crystal phase shown. In addition, the phosphor ceramic layers of example 4 are all made of Ce3+Activating the phosphor.
For example 4, by addition of a compound (Y) of stoichiometric composition0.997Ce0.003)3Al5O12Except for weighing the raw materials, the same procedure as in examples 1 to 3 was repeated to obtain a calcined product. That is, the phosphor ceramic layers of examples 1 to 3 are different from the phosphor ceramic layer of example 4 mainly in the composition ratio of Y and Ce.
The thickness of the phosphor ceramic layer of example 4 was 103 μm.
The outer and inner diameters of the phosphor ceramic layer of example 4 were 41mm and 27 mm. The phosphor ceramic layer of example 4 was dark yellow.
Next, evaluation of the phosphor ceramic layer will be described.
First, the density of the phosphor ceramic layer of example 4 was evaluated by the archimedes method. The density of the phosphor ceramic layer of example 4 was 4.48g/cm3. In addition, the density of the phosphor ceramic layer of example 4 was Y3Al5O12Theoretical density of (4.55 g/cm)3) 98.4% of. That is, the density of the phosphor ceramic layer of example 4 was Y3Al5O1297 to 100 percent of the theoretical density.
In addition, as described above, the phosphor ceramic layer 20 of the present embodiment is formed of Ce3+And Ce4+That is, the phosphor ceramic layer 20 contains Ce3+And Ce4+. Thus, the Ce of the phosphor ceramic layer of example 4 was next subjected to a hard X-ray XAFS apparatus3+Presence ratio and Ce4+The presence ratio was evaluated. Specifically, the XAFS spectra of the phosphor ceramic layers of example 4 were obtained in the range of 5687eV to 5777eV using a hard X-ray XAFS device. Ce was obtained by subjecting the obtained XAFS spectrum3+Reference spectrum of (2) and Ce4+Fitting analysis of the reference spectrum of (2) to Ce3+Presence ratio and Ce4+The presence ratio was evaluated. Furthermore, to obtain Ce3+Reference spectrum of (2) and Ce4+With respect to the reference spectrum of CeO under the same conditions2And CeF3Evaluation was carried out.
Table 1 shows Ce of the phosphor ceramic layer of example 43+Presence ratio and Ce4+A table of ratios exists. As shown in Table 1, Ce of the phosphor ceramic layer of example 43+Presence ratio and Ce4+The presence ratio was 78.3% and 21.7%, respectively. As for the phosphor ceramic layer of example 4, it satisfies Ce3+×100％/(Ce3++Ce4+) Not less than 60 percent, i.e. Ce3+The presence ratio is 60% or more.
TABLE 1
| Ce3+Existence ratio of | Ce4+Existence ratio of |
| 78.3％ | 21.7％ |
Next, a method for manufacturing the wavelength conversion device of example 4 is described.
First, a disk-shaped substrate body (50 mm in diameter and 0.5mm in thickness) of Ag-coated Al was prepared as a light reflecting layer. Further, a screw hole is opened in the center of the substrate body. Next, a phosphor ceramic layer is provided on the substrate body.
A disk-shaped first plate member (26.5 mm in outer diameter and 100 μm in thickness) of Al having a screw hole in the center thereof was provided on the inner side of the phosphor ceramic layer. The phosphor ceramic layer is a phosphor ring, and the first plate member is provided inside the ring shape. Further, a disk-shaped second plate member (having an outer diameter of 29mm and a thickness of 200 μm) of Al having a screw hole at the center thereof was provided so as to overlap the phosphor ceramic layer and the first plate member. The substrate body, the first plate member, and the second plate member are screwed together. The phosphor ceramic layer is thus fixed, and a wavelength conversion device is obtained. That is, in the wavelength conversion device of example 4, the phosphor ceramic layer is sandwiched and fixed between the substrate body and the second plate member.
Thus, the phosphor ceramic layer and the wavelength conversion device of example 4 were obtained.
Further, evaluation of the wavelength conversion device will be described.
The wavelength conversion device of example 4 was evaluated in the same manner as in examples 1 to 3.
Fig. 7 is a graph showing the evaluation results of the wavelength conversion device of example 4 of this embodiment. Specifically, fig. 7 shows the fluorescence energy relative value (after passing through the opening), the fluorescence energy relative value (before passing through the opening), and the coupling efficiency of the wavelength conversion device of example 4. For comparison, fig. 7 also shows the fluorescence energy relative values (after passing through the opening), the fluorescence energy relative values (before passing through the opening), and the coupling efficiencies of the wavelength conversion devices of examples 1 to 3 and comparative examples.
Here, the fluorescence energy relative value (after passing through the aperture) refers to a relative value of fluorescence energy of fluorescence emitted from the wavelength conversion device after passing through the aperture of the aperture member. The fluorescence energy of the fluorescence emitted from the wavelength conversion device of the comparative example after passing through the opening was set to 100%.
The fluorescence energy relative value (before passing through the aperture) is a relative value of fluorescence energy of fluorescence emitted from the wavelength conversion device before passing through the aperture of the aperture member. The fluorescence energy of the fluorescence emitted from the wavelength conversion device of the comparative example after passing through the opening was set to 100%.
The coupling efficiency is a ratio of a fluorescence energy relative value (after passing through the opening) to a fluorescence energy relative value (before passing through the opening). That is, the coupling efficiency is a value obtained by dividing the fluorescence energy relative value (after passing through the opening) by the fluorescence energy relative value (before passing through the opening).
As shown in fig. 7, the coupling efficiency of the wavelength conversion device of example 4 was 85%. As described above, the coupling efficiency of the wavelength conversion device of the comparative example was 81%. The wavelength conversion device of example 4 having higher coupling efficiency has a smaller light emitting area because more light passes through the opening among the generated fluorescence. For example, as shown in fig. 5A and 5B, the wavelength conversion device of example 4 passes a large amount of light through the opening 2a of the diaphragm member 2, and thus the amount of light that can be used as projection light for the projector 100 is large. That is, the wavelength conversion device of example 4 shows high light use efficiency.
Further, the relative fluorescence energy values (after passing through the opening) and the relative fluorescence energy values (before passing through the opening) of the wavelength conversion device of example 4 were 108% and 128%, respectively. This value is higher than the fluorescence energy relative value (after passing through the opening) and the fluorescence energy relative value (before passing through the opening) of the wavelength conversion devices of examples 1 to 3.
As described above, Ce is the phosphor ceramic layer of example 43+An existence ratio of 60% or more, Ce4+Less than 40%, less. Thus, from Ce4+The resulting non-luminescence relaxation loss is reduced, and thus Ce3+The phosphor ceramic layer of example 4 having a ratio of 60% or more has a high emission efficiency. Thus, byThe wavelength conversion device of example 4 can improve the light use efficiency by including such a phosphor ceramic layer. Further, when the projector includes such a wavelength conversion device 1, the light use efficiency of the projector can be improved. For example, a projector with low power consumption can be realized.
In addition, since Ce is comprised4+The non-emission relaxation loss caused is reduced, and therefore, the heat generation of the phosphor ceramic layer of example 4 is reduced. Therefore, the projector including such a phosphor ceramic layer can increase the maximum input energy of the excitation light L1, that is, can realize a high-output projector.
(modification 1)
The phosphor ceramic layer 20 of the embodiment is composed of only the first crystal phase, but is not limited thereto. Here, a wavelength conversion device 1a including a phosphor ceramic layer 20a including a first crystal phase and a second crystal phase will be described.
[ constitution of wavelength conversion device ]
First, the structure of the wavelength conversion device 1a according to the present modification will be described with reference to the drawings. Fig. 8 is a perspective view of the wavelength conversion device 1a of the present modification. Fig. 9 is a cross-sectional view showing a cross-section of the wavelength conversion device 1a at the line IX-IX in fig. 8.
The wavelength conversion device 1a of the present modification has the same configuration as the wavelength conversion device 1 of the embodiment, except that it includes the phosphor ceramic layer 20 a. That is, as shown in fig. 8 and 9, the wavelength conversion device 1a includes a substrate 10 having a light reflection surface 13, a phosphor ceramic layer 20a, and an antireflection layer 30.
In the present modification, the wavelength conversion device 1a is also a phosphor wheel that is used in a projector, receives the excitation light L1, and emits reflected light including fluorescence.
The phosphor ceramic layer 20a contains a first crystal phase and a second crystal phase. More specifically, in the present modification, the phosphor ceramic layer 20a is composed of a first crystal phase and a second crystal phase.
The first crystal phase has the structure described in the embodiment.
In addition, the second crystal phase is a crystal phase having a structure different from that of the garnet. That is, the second crystal phase has a structure different from that of the first crystal phase. Therefore, the refractive index of the first crystal phase and the refractive index of the second crystal phase are different from each other.
When the phosphor ceramic layer 20a is observed in a cross section, the area representing the first crystal phase is, for example, 10% to 99% when the area representing the image of the phosphor ceramic layer 20a is set to 100% as a whole. The area of the first crystal phase is not limited to this, and may be, for example, 75% to 98%, or 85% to 95%. That is, the phosphor ceramic layer 20a of the present modification mainly contains the first crystal phase.
The second crystal phase in this modification is a crystal phase having a perovskite structure, but is not limited thereto, and may be a crystal phase having a structure different from the garnet structure and the perovskite structure.
The perovskite structure is defined by EFO3A crystal structure represented by the general formula (1). The element E is selected from rare earth elements such as Ca, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Lu, and the element F is selected from elements such as Mg, Al, Si, Ga and Sc. Examples of such garnet structures include: YAP (Yttrium-Aluminum-Perovskite) and the like. In the present modification, the second crystal phase consists of (Y)1-yCey)AlO3(0. ltoreq. y < 0.1) is YAP.
Further, the second crystal phase may be a solid solution of a plurality of perovskite crystal phases different in chemical composition.
Alternatively, the second crystalline phase may comprise a chemical composition deviating from the general formula EFO described above3The indicated crystal phases.
The phosphor ceramic layer 20a of the present modification is composed of only the first crystal phase and the second crystal phase, that is, does not include a crystal phase having a structure different from the garnet structure and the perovskite structure.
In this modification, the material showing the second crystal phase is YAP as an example, but is not limited thereto. The material for the second crystal phase is selected so that the difference between the refractive index of the material for the second crystal phase and the refractive index of the material for the first crystal phase having a garnet structure (YAG here) is 0.05 to 0.5. Thus, as described above, the refractive index of the first crystal phase and the refractive index of the second crystal phase are different from each other. In addition, the difference between the refractive index of the material representing the second crystal phase and the refractive index of the material representing the first crystal phase is preferably 0.06 to 0.3, and more preferably 0.07 to 0.15.
For example, in the case where the second crystal phase in the present modification is a crystal phase having a structure different from the garnet structure and the perovskite structure, the material indicating the second crystal phase may be Al2O3、Y2O3、Y4Al2O9、Lu2O3And Lu4Al2O9And the like.
The phosphor ceramic layer 20a receives the light incident from above the wavelength conversion device 1a as the excitation light L1 and emits fluorescence. More specifically, when light emitted from an excitation light source described later as the excitation light L1 is irradiated to the phosphor ceramic layer 20a, the phosphor ceramic layer 20a emits fluorescence as wavelength-converted light. That is, the wavelength-converted light emitted from the phosphor ceramic layer 20a is light having a wavelength longer than the wavelength of the excitation light L1.
In the present modification, the wavelength converted light emitted from the phosphor ceramic layer 20a includes fluorescence as yellow light. The phosphor ceramic layer 20a absorbs light having a wavelength of 380nm to 490nm, for example, and emits fluorescence as yellow light having a fluorescence peak wavelength in a region having a wavelength of 490nm to 580 nm. By forming the phosphor ceramic layer 20a of YAG or YAP, the phosphor ceramic layer 20a which emits fluorescence having a fluorescence peak wavelength in a wavelength range of 490nm to 580nm can be easily realized.
The x-coordinate of the chromaticity diagram of the wavelength converted light emitted from the phosphor ceramic layer 20a may be 0.415 or less, more preferably 0.410 or less, and still more preferably 0.408 or less. If the x-coordinate of the chromaticity diagram of the wavelength-converted light emitted from the phosphor ceramic layer 20a is the above-mentioned numerical value, the temperature quenching of the phosphor ceramic layer 20a becomes small, and therefore, the phosphor ceramic layer 20a having high emission efficiency can be realized.
The density of the phosphor ceramic layer 20a may be 95% to 100% of the theoretical density, and more preferably 97% to 100% of the theoretical density. Here, the theoretical density refers to a density in a case where atoms in a layer are ideally arranged. In other words, the theoretical density is a density assuming that there is no void in the phosphor ceramic layer 20a, and is a value calculated using a crystal structure. For example, when the density of the phosphor ceramic layer 20a is 99%, the remaining 1% corresponds to voids. That is, the higher the density of the phosphor ceramic layer 20a, the fewer the voids. If the density of the phosphor ceramic layer 20a is in the above range, the amount of total fluorescence emitted from the phosphor ceramic layer 20a increases, and therefore, the wavelength conversion device 1a and the projector that emit light with a larger amount of emission light can be provided.
Further, the theoretical density refers to the theoretical density of the first crystal phase having a garnet structure.
The density of the phosphor ceramic layer 20a may be 4.32g/cm3～4.55g/cm3More preferably 4.41g/cm3～4.55g/cm3. As shown in this modification, when the phosphor ceramic layer 20a is composed of YAG and YAP, if the density of the phosphor ceramic layer 20a is in the above range, the density of the phosphor ceramic layer 20a becomes 95% to 100% and 97% to 100%, respectively. When the density of the phosphor ceramic layer 20a is in the above range, the excitation light L1 absorbed by the phosphor ceramic layer 20a can be efficiently converted into fluorescence. That is, the phosphor ceramic layer 20a having high emission efficiency is realized.
The thickness (length in the z-axis direction) of the phosphor ceramic layer 20a is preferably 50 μm or more and less than 150 μm, and more preferably 50 μm or more and less than 120 μm. The thickness of the phosphor ceramic layer is preferably 70 μm or more and less than 120 μm, and more preferably 80 μm or more and less than 110 μm.
[ constitution of projector ]
The wavelength conversion device 1a configured as described above is used in a projector as in the wavelength conversion device 1 of the embodiment. That is, the wavelength conversion device 1a of the present modification example may be used instead of the wavelength conversion device 1 of the embodiment.
[ examples ]
Here, the manufacturing method and the light use efficiency are explained in the wavelength conversion devices of examples 5 and 6. The wavelength conversion device of example 5 has the same configuration as the wavelength conversion device 1a of the present modification, and the wavelength conversion device of example 6 has the same configuration as the wavelength conversion device 1 of the embodiment.
First, a method for manufacturing a phosphor ceramic layer included in the wavelength conversion device of examples 5 and 6 is described.
The phosphor ceramic layer of example 5 was mainly composed of (Y)0.997Ce0.003)3Al5O12The indicated crystal phase (i.e., the first crystal phase). In addition, as described above, the phosphor ceramic layer of example 5 also contains the second crystal phase. The phosphor ceramic layer of example 6 is composed of (Y)0.997Ce0.003)3Al5O12The indicated crystal phase (i.e., the first crystal phase). In addition, the phosphor ceramic layers of examples 5 and 6 are both made of Ce3+Activating the phosphor.
The phosphor ceramic layers of examples 5 and 6 were prepared from the same raw materials as those used in examples 1 to 3.
First, a compound (Y) having a stoichiometric composition0.9953Ce0.0047)3Al5O12The above raw materials were weighed. Subsequently, the above raw materials were mixed in the same manner as in examples 1 to 3 to obtain a slurry-like mixed raw material.
Next, in example 5, a granulated mixed raw material was obtained without using a spray drying apparatus. Specifically, 100g of the raw material mixture dried by the dryer was charged into an alumina mortar. Then, a solution obtained by dissolving polyvinyl alcohol in water at a ratio of 0.5 wt% was used as a polyvinyl alcohol solution, and 18mL of the polyvinyl alcohol solution was further put into an alumina mortar. Thereafter, the mixed raw materials were mixed with the polyvinyl alcohol solution using a pestle. Subsequently, the mixture of the mixed raw material and the polyvinyl alcohol solution was sieved using a sieve having a mesh of 512 μm. As a result, a mixture of the starting material mixture having a particle size of about 512 μm or less and the polyvinyl alcohol solution was obtained. Thereafter, the mixture was treated with a drier set to 105 ℃ for 30 minutes to remove moisture. In this way, the granulated mixed raw material used in example 5 was obtained. In example 6, the mixed raw material was granulated in the same manner as in examples 1 to 3 to obtain a granulated mixed raw material.
The phosphor ceramic layers of examples 5 and 6 were temporarily molded in the same manner. Specifically, the granulated raw material mixture was temporarily molded into a cylindrical shape by an electric hydraulic press (EMP-5, manufactured by Milliki Seisaku-Sho Ltd.) and a cylindrical mold (outer diameter 66mm, inner diameter 46mm, height 130 mm). The pressure during molding was set to 5 MPa. Next, the molded body after the temporary molding was subjected to main molding by a cold isostatic pressing apparatus. The pressure during the primary molding was set to 300 MPa. In addition, the molded body after the main molding is subjected to a heat treatment (binder removal treatment) for the purpose of removing the binder (binder) used in the granulation. The temperature of the heat treatment was set to 500 ℃. The time for the heat treatment was set to 10 hours.
The molded article after the heat treatment was fired in a tubular atmosphere furnace. The firing temperature was set to 1675 ℃. The firing time was set to 4 hours. The firing atmosphere is a mixed gas atmosphere of nitrogen and hydrogen. The outer diameter and the inner diameter of the fired material after firing were 49mm and 35mm, respectively.
The fired cylindrical material was sliced using a multi-wire saw. The thickness of the cylindrical fired product after slicing was set to about 700 μm.
In examples 5 and 6, the fired material after firing was subjected to heat treatment at a temperature of 1000 ℃ or higher.
The sliced fired material was polished with a polishing apparatus, and the thickness of the fired material was adjusted. The thickness of the phosphor ceramic layer was 118 μm in example 5 and 117 μm in example 6.
The phosphor ceramic layers of examples 5 and 6 had outer and inner diameters of 49mm and 35mm, respectively. The phosphor ceramic layers of examples 5 and 6 were dark yellow.
Next, evaluation of the phosphor ceramic layer will be described.
First, the density of the phosphor ceramic layers of examples 5 and 6 was evaluated by the archimedes method. The densities of the phosphor ceramic layers of examples 5 and 6 were 4.48g/cm, respectively3And 4.42g/cm3. The density of the phosphor ceramic layers of examples 5 and 6 was Y3Al5O12Theoretical density of (4.55 g/cm)3) 98.4% and 97.1%. That is, the density of the phosphor ceramic layers of examples 5 and 6 was Y3Al5O1297 to 100 percent of the theoretical density.
Next, a cross-sectional SEM image of the phosphor ceramic layer of example 5 was evaluated using a Scanning Electron Microscope (SEM).
Fig. 10 is an SEM image showing a cross section of the phosphor ceramic layer of example 5 of the present modification. Fig. 10(a) shows an SEM image of a wide cross section of the phosphor ceramic layer of example 5. The SEM image shown in fig. 10(a) corresponds to an image of an area surrounded by a rectangular broken line in the cross-sectional view shown in fig. 9. Fig. 10(b) is an enlarged SEM image of the area surrounded by the single-dotted rectangle of fig. 10 (a). Fig. 10(c) is an enlarged SEM image of the area surrounded by the rectangle with two-dot chain lines in fig. 10 (a).
Here, the phosphor ceramic layer in example 5, that is, the phosphor ceramic layer 20a of the present modification example includes a single-phase portion and a mixed-phase portion separated from the single-phase portion. Fig. 10(b) shows a single-phase portion, and fig. 10(c) shows a mixed-phase portion.
In the SEM image in fig. 10, the darker colored region corresponds to the first crystal phase having the garnet structure, and the lighter colored region corresponds to the second crystal phase having the perovskite structure. In the SEM image in fig. 10, the darkest colored region corresponds to a void.
Only the first crystal phase having a garnet structure and the first crystal phase of the second crystal phase having a structure different from the garnet structure (here, a perovskite structure) are provided in the single-phase portion. More specifically, only the first crystal phase is provided in the single-phase portion, and other crystals having a structure different from the garnet structure and the perovskite structure are not provided.
In the mixed phase portion, both the first crystal phase and the second crystal phase are mixed. More specifically, only the first crystal phase and the second crystal phase are mixed in the mixed phase portion. In the mixed phase portion, both the first crystal phase and the second crystal phase and further another crystal phase having a structure different from the garnet structure and the perovskite structure may be mixed.
The mixed phase portion in example 5 includes both the first crystal phase and the second crystal phase in a mixed manner in a randomly intertwined structure, but is not limited to this, and both the first crystal phase and the second crystal phase may be provided in a mixed manner in a periodically arranged structure.
In addition, the phosphor ceramic layer in example 5 includes a plurality of mixed phase portions. The regions surrounded by the broken lines in fig. 10(a) correspond to the mixed phase portions, respectively.
The plurality of mixed phase portions are surrounded by the single phase portion. The shape of the single-phase portion and the plurality of mixed-phase portions may be a sea-island shape. In this case, the single-phase portion corresponds to the sea, and the plurality of mixed-phase portions correspond to the islands.
In addition, it is sufficient if more second crystal phases than the first crystal phases are provided in the mixed phase portion. For example, the ratio of the first crystal phase to the second crystal phase in the mixed phase portion is as follows. When the phosphor ceramic layer of example 5 was observed in a cross section (for example, fig. 10), the area of the second crystal phase was, for example, 10% to 99% when the entire area of the image representing the mixed phase portion was 100%. The area of the second crystal phase is not limited to this, and may be, for example, 70% to 95%, or 80% to 90%. That is, the second crystal phase is mainly provided in the mixed phase portion of the present modification.
In this way, both the first crystal phase having a garnet structure and the second crystal phase having a perovskite structure are mixed in the mixed phase portion. As described above, the refractive index of the first crystal phase and the refractive index of the second crystal phase are different from each other. Therefore, the refractive index of the single-phase portion and the refractive index of the mixed-phase portion, in which only the first crystal phase is provided, are different from each other. In this modification, since the refractive index of YAG is 1.83 and the refractive index of YAP is 1.91, the refractive index of the single-phase portion is lower than that of the mixed-phase portion.
Further, the size of the mixed phase portion will be explained. The size of the mixed phase portion indicates the length of the mixed phase portion in the longitudinal direction in the SEM image shown in fig. 10. The size of the mixed phase portion is, for example, a length indicated by a double-headed arrow in fig. 10. The size of the mixed phase portion is preferably 0.5 μm or more and less than 500. mu.m, more preferably 1 μm or more and less than 300. mu.m, and still more preferably 2 μm or more and less than 100. mu.m.
Thus, the phosphor ceramic layer (phosphor ceramic layer 20a) of example 5 includes the first crystal phase and the second crystal phase, and fig. 10 shows a case where the single-phase portion and the mixed-phase portion are provided. On the other hand, the phosphor ceramic layer of example 6 is constituted only of the first crystal phase. Therefore, it was confirmed that the mixed phase portion was not provided in the phosphor ceramic layer of example 6.
Next, methods for manufacturing the wavelength conversion devices of examples 5 and 6 are described.
First, a disk-shaped substrate body (50 mm in diameter and 0.5mm in thickness) of Ag-coated Al was prepared as a light reflecting layer. Further, a screw hole is opened in the center of the substrate body. Next, a phosphor ceramic layer is provided on the substrate body.
A disc-shaped third plate member (34.5 mm in outside diameter and 100 μm in thickness) of Al having a screw hole in the center thereof was provided on the inner side of the phosphor ceramic layer. The phosphor ceramic layer is a phosphor ring, and the third plate member is provided inside the ring shape. Further, a disk-shaped fourth plate member (having an outer diameter of 39mm and a thickness of 200 μm) of Al having a screw hole at the center thereof was provided so as to overlap the phosphor ceramic layer and the third plate member. The substrate body, the third plate member, and the fourth plate member are screwed. Thus, the phosphor ceramic layer was fixed, and a wavelength conversion device was obtained. That is, in the wavelength conversion devices of examples 5 and 6, the phosphor ceramic layer was sandwiched and fixed between the substrate main body and the fourth plate member.
Further, evaluation of the wavelength conversion device will be described.
The wavelength conversion devices of examples 5 and 6 were evaluated in the same manner as in examples 1 to 3.
Fig. 11 is a graph showing the evaluation results of the wavelength conversion devices of examples 5 and 6 of the present modification. Specifically, fig. 11 shows the fluorescence energy relative value (after passing through the opening), the fluorescence energy relative value (before passing through the opening), and the coupling efficiency of the wavelength conversion devices of examples 5 and 6.
Here, the fluorescence energy relative value (after passing through the aperture) refers to a relative value of fluorescence energy of fluorescence emitted from each wavelength conversion device after passing through the aperture of the aperture member. The fluorescence energy of the fluorescence emitted from the wavelength conversion device of example 6 after passing through the opening was set to 100%.
The fluorescence energy relative value (before passing through the aperture) is a relative value of fluorescence energy of fluorescence emitted from each wavelength conversion device before passing through the aperture of the aperture member. The fluorescence energy of the fluorescence emitted from the wavelength conversion device of example 6 after passing through the opening was set to 100%.
The coupling efficiency is a ratio of a fluorescence energy relative value (after passing through the opening) to a fluorescence energy relative value (before passing through the opening). That is, the coupling efficiency is a value obtained by dividing the fluorescence energy relative value (after passing through the opening) by the fluorescence energy relative value (before passing through the opening).
As shown in fig. 11, the relative fluorescence energy values (after passing through the opening) of the wavelength conversion devices of examples 5 and 6 were 101% and 100%, respectively. The relative fluorescence energy values (before passing through the opening) of the wavelength conversion devices of examples 5 and 6 were 117% and 122%, respectively.
The coupling efficiency of the wavelength conversion device of example 5 corresponding to the wavelength conversion device 1a of the present modification example was 87%. The coupling efficiency of the wavelength conversion device of example 6 corresponding to the wavelength conversion device 1 of the embodiment was 82%.
As described above, the phosphor ceramic layer (phosphor ceramic layer 20a) included in the wavelength conversion device of example 5 is composed of the first crystal phase and the second crystal phase having different refractive indices from each other.
This causes regions having different refractive indices to be generated in the phosphor ceramic layer 20a, and therefore, the excitation light L1 and the fluorescence are more easily scattered. As a result, light is prevented from being guided in the planar direction (i.e., the x-axis direction or the y-axis direction) of the layers shown in fig. 5A and 5B in the embodiment, and the light-emitting area of the phosphor ceramic layer 20a becomes smaller. Therefore, the coupling efficiency of the wavelength conversion device of example 5 is higher compared to that of the wavelength conversion device of example 6. That is, the wavelength converting device (wavelength converting device 1a) of example 5 having a smaller etendue and higher light use efficiency is realized. When the projector includes such a wavelength conversion device 1a, the light use efficiency of the projector can be further improved.
The phosphor ceramic layer 20a includes a single-phase portion and a mixed-phase portion separated from the single-phase portion. The single phase portion includes only a first crystal phase of the first crystal phase and the second crystal phase, and the mixed phase portion includes both the first crystal phase and the second crystal phase. The refractive index of the single-phase portion and the refractive index of the mixed-phase portion are different from each other.
This causes regions having different refractive indices to be generated in the phosphor ceramic layer 20a, and therefore, the excitation light L1 and the fluorescence are more easily scattered. As a result, the light emitting area of the phosphor ceramic layer 20a is further reduced. Therefore, the wavelength conversion device 1a with a smaller etendue and higher light utilization efficiency is realized.
When the size of the mixed phase portion is in the above range, the excitation light L1 and the fluorescence are more easily scattered.
The phosphor ceramic layer 20a includes a plurality of mixed phase portions. The plurality of mixed phase portions are surrounded by the single phase portion.
This makes the excitation light L1 and the fluorescence more easily scattered. As a result, the light emitting area of the phosphor ceramic layer 20a is further reduced. Therefore, the wavelength conversion device 1a with a smaller etendue and higher light utilization efficiency is realized.
The above results show that: the coupling efficiency of the wavelength conversion device 1a is increased not only by the light guide suppressing effect due to the thin film thickness of the phosphor ceramic layer 20a but also by the light guide suppressing effect of the phosphor ceramic layer 20a itself. Namely, it was shown that: even if the film thickness of the phosphor ceramic layer 20a is not controlled, the coupling efficiency of the wavelength conversion device 1a is increased.
The difference between the refractive index of the material representing the second crystal phase and the refractive index of the material representing the first crystal phase is 0.05 to 0.5.
This makes the excitation light L1 and the fluorescence more easily scattered. As a result, the light emitting area of the phosphor ceramic layer 20a is further reduced. Therefore, the wavelength conversion device 1a with a smaller etendue and higher light utilization efficiency is realized.
In addition, the second crystal phase is composed of (Y)1-yCey)AlO3(0. ltoreq. y < 0.1).
This makes it easy to set the difference between the refractive index of the material exhibiting the second crystal phase and the refractive index of the material exhibiting the first crystal phase to the above range.
(modification 2)
Further, a phosphor ceramic layer 20b having a different structure from the phosphor ceramic layers 20 and 20a will be described.
Fig. 12 is a perspective view of a fluorescent ceramic member according to this modification.
As an example, the phosphor ceramic member of the present modification is a phosphor ceramic layer 20b having a layered shape.
The phosphor ceramic layer 20b is a member used for a projector, similarly to the phosphor ceramic layers 20 and 20a shown in the embodiment and the modification 1.
The phosphor ceramic layer 20b has the same configuration as the phosphor ceramic layer 20a of modification 1 except for the following points. Specifically, this is Ce3+The presence ratio is 60% or more.
That is, the phosphor ceramic layer 20b contains a first crystal phase having a garnet structure and a second crystal phase having a structure other than the garnet structure. The first crystal phase and the second crystal phase have refractive indices different from each other. In the present modification, the first crystal phase and the second crystal phase are crystal phases represented by YAG and YAP, respectively, and the phosphor ceramic layer 20b mainly contains the first crystal phase. The density of the phosphor ceramic member (phosphor ceramic layer 20b) may be 95% to 100% of the theoretical density, and more preferably 97% to 100% of the theoretical density. The thickness of the phosphor ceramic member (phosphor ceramic layer 20b) may not be particularly limited, but when limitation is placed, the thickness is preferably 50 μm or more and less than 500 μm, and more preferably 50 μm or more and less than 300 μm. The film thickness is more preferably 50 μm or more and less than 120 μm.
The phosphor ceramic member (phosphor ceramic layer 20b) has the above-described configuration. Therefore, when the phosphor ceramic layer 20b is used in a projector and irradiated with excitation light, a region having a different refractive index is generated in the phosphor ceramic layer 20b, and thus the excitation light and the fluorescence are further scattered. As a result, light is prevented from being guided in the planar direction (i.e., the x-axis direction or the y-axis direction) of the layers shown in fig. 5A and 5B of the embodiment, and the light-emitting area of the phosphor ceramic layer 20B becomes smaller. Therefore, the phosphor ceramic member has a smaller etendue and a higher light utilization efficiency. When the projector includes such a phosphor ceramic member (phosphor ceramic layer 20b), the light use efficiency of the projector can be further improved.
The phosphor ceramic layer 20b is made of a material containing Ce3+And Ce4+YAG and YAP (i.e., the phosphor ceramic layer 20b contains Ce3+And Ce4+. Here, the phosphor ceramic layer 20b satisfies Ce3+×100％/(Ce3++Ce4+) Not less than 60 percent, i.e. Ce3+The presence ratio is 60% or more.
To Ce3+The phosphor ceramic layer 20b having a content of 60% or more is composed of Ce4+The non-light emission relaxation loss caused is reduced, and thus the light emission efficiency becomes high. Further, the projector including the phosphor ceramic layer 20b can improve the light use efficiency. For example, a projector with low power consumption can be realized.
In addition, from Ce4+The loss of non-luminescence relaxation is reduced, and therefore the luminescence of the phosphor ceramic layer 20b is reducedThe heat is reduced. Therefore, the projector including the phosphor ceramic layer 20b can increase the maximum input energy of the excitation light, that is, can realize a high-output projector.
(other embodiments)
The wavelength conversion device and the like of the present invention have been described above based on the embodiments and the modifications, but the present invention is not limited to these embodiments and modifications. The scope of the present invention includes a mode in which various modifications that can be conceived by a person skilled in the art are performed on the embodiment and the modified examples, and other modes in which some of the constituent elements in the embodiment and the modified examples are combined and constructed, as long as the scope of the present invention does not depart from the gist of the present invention.
In the embodiments, the light source is a semiconductor laser light source, but is not limited thereto, and may be an LED light source.
In the above-described embodiments, various modifications, substitutions, additions, omissions, and the like can be made within the scope of the claims and their equivalents.
Claims (16)
1. A wavelength conversion device for use in a projector and receiving excitation light to emit reflected light containing fluorescence,
wherein the fluorescent lamp comprises a substrate having a light reflecting surface and a fluorescent ceramic layer,
the phosphor ceramic layer is located above the light reflecting surface and contains a first crystal phase having a garnet structure,
the visible light reflectivity of the light reflecting surface is 95 to 100 percent,
the density of the phosphor ceramic layer is 97-100% of the theoretical density,
the thickness of the phosphor ceramic layer is 50 μm or more and less than 120 μm.
2. The wavelength conversion device according to claim 1, wherein a film thickness of the phosphor ceramic layer is 70 μm or more and less than 120 μm.
3. The wavelength conversion device according to claim 1, further comprising an antireflection layer that is located above the phosphor ceramic layer and prevents reflection of the excitation light.
4. The wavelength conversion device according to claim 1, wherein the substrate has a substrate body and a light reflecting layer,
the light reflecting surface is formed by one surface included in the light reflecting layer.
5. The wavelength conversion device according to claim 4, wherein the light reflecting layer comprises light scattering particles.
6. The wavelength conversion device according to claim 4, wherein the light reflecting layer comprises Ag.
7. The wavelength conversion device of claim 1, wherein the phosphor ceramic layer is composed of (Y)1-xCex)3Al5O12The first crystal phase represented by (1) 0.001. ltoreq. x < 0.1.
8. The wavelength conversion device of claim 1, wherein the density of the phosphor ceramic layer is 4.41g/cm3～4.55g/cm3。
9. The wavelength conversion device of claim 1, wherein the phosphor ceramic layer further comprises a second crystalline phase having a structure different from a garnet structure.
10. The wavelength conversion device according to claim 9, wherein the phosphor-ceramic layer includes a single-phase portion and a mixed-phase portion that is separate from the single-phase portion,
wherein only the first crystal phase of the first crystal phase and the second crystal phase is provided in the single-phase portion,
the mixed phase portion is provided with both the first crystal phase and the second crystal phase mixed therein.
11. The wavelength conversion device according to claim 10, wherein the phosphor ceramic layer includes a plurality of the mixed phase portions,
the plurality of mixed phase portions are surrounded by the single phase portion.
12. The wavelength conversion device according to claim 9, wherein a difference between a refractive index of the material representing the second crystal phase and a refractive index of the material representing the first crystal phase is 0.05 to 0.5.
13. The wavelength conversion device of claim 9, wherein the second crystalline phase is composed of (Y)1-yCey)AlO3The expressed crystalline phase, y is more than or equal to 0 and less than 0.1.
14. The wavelength conversion device according to any one of claims 1 to 13, wherein the phosphor ceramic layer comprises Ce3+And Ce4+，
Satisfy Ce3+×100％/(Ce3++Ce4+)≥60％。
15. A projector comprising an excitation light source that emits excitation light and the wavelength conversion device according to any one of claims 1 to 14 that receives the excitation light and emits reflected light including fluorescence.
16. A phosphor ceramic member for use in a projector,
wherein it contains a first crystal phase having a garnet structure and a second crystal phase having a structure other than the garnet structure,
the density of the phosphor ceramic member is 97 to 100% of the theoretical density,
the thickness of the fluorescent ceramic member is 50 μm or more and less than 300 μm.
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| JP2020-111097 | 2020-06-29 | ||
| JP2020111097 | 2020-06-29 | ||
| JP2021-079456 | 2021-05-10 | ||
| JP2021079456A JP2022022975A (en) | 2020-06-29 | 2021-05-10 | Wavelength conversion device, projector and fluorescent body ceramic member |
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| CN113934095A true CN113934095A (en) | 2022-01-14 |
| CN113934095B CN113934095B (en) | 2024-01-23 |
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| CN (1) | CN113934095B (en) |
| DE (1) | DE102021116016A1 (en) |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201412944A (en) * | 2012-09-25 | 2014-04-01 | Toshiba Kk | Fluorescent substance, light-emitting device and method for producing fluorescent substance |
| JP5712768B2 (en) * | 2010-05-10 | 2015-05-07 | 信越化学工業株式会社 | Wavelength conversion member, light emitting device, and method of manufacturing wavelength conversion member |
| JP2015119046A (en) * | 2013-12-18 | 2015-06-25 | スタンレー電気株式会社 | Light-emitting device and light source for projector using the same |
| JP2017138470A (en) * | 2016-02-03 | 2017-08-10 | セイコーエプソン株式会社 | Reflection element, wavelength conversion element, light source device, and projector |
| US10208900B2 (en) * | 2014-09-09 | 2019-02-19 | Ushio Denki Kabushiki Kaisha | Fluorescence light source device with wavelength conversion member with particular ratio between light transmission percentage and light reflection percentage |
| JP2019066880A (en) * | 2015-12-03 | 2019-04-25 | セイコーエプソン株式会社 | Phosphor, wavelength conversion element, light source device, and projector |
| TW201920608A (en) * | 2017-09-29 | 2019-06-01 | 日商日本特殊陶業股份有限公司 | Optical wavelength converter and composite optical device |
| JP2020046638A (en) * | 2018-09-21 | 2020-03-26 | 日本特殊陶業株式会社 | Optical wavelength conversion device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6503710B2 (en) * | 2013-12-27 | 2019-04-24 | 日本電気硝子株式会社 | Fluorescent wheel for projector, method of manufacturing the same, and light emitting device for projector |
-
2021
- 2021-06-21 DE DE102021116016.2A patent/DE102021116016A1/en active Pending
- 2021-06-24 CN CN202110701893.2A patent/CN113934095B/en active Active
- 2021-06-24 TW TW110123029A patent/TWI802918B/en active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5712768B2 (en) * | 2010-05-10 | 2015-05-07 | 信越化学工業株式会社 | Wavelength conversion member, light emitting device, and method of manufacturing wavelength conversion member |
| TW201412944A (en) * | 2012-09-25 | 2014-04-01 | Toshiba Kk | Fluorescent substance, light-emitting device and method for producing fluorescent substance |
| JP2015119046A (en) * | 2013-12-18 | 2015-06-25 | スタンレー電気株式会社 | Light-emitting device and light source for projector using the same |
| JP6253392B2 (en) * | 2013-12-18 | 2017-12-27 | スタンレー電気株式会社 | Light emitting device and light source for projector using the same |
| US10208900B2 (en) * | 2014-09-09 | 2019-02-19 | Ushio Denki Kabushiki Kaisha | Fluorescence light source device with wavelength conversion member with particular ratio between light transmission percentage and light reflection percentage |
| JP2019066880A (en) * | 2015-12-03 | 2019-04-25 | セイコーエプソン株式会社 | Phosphor, wavelength conversion element, light source device, and projector |
| JP2017138470A (en) * | 2016-02-03 | 2017-08-10 | セイコーエプソン株式会社 | Reflection element, wavelength conversion element, light source device, and projector |
| TW201920608A (en) * | 2017-09-29 | 2019-06-01 | 日商日本特殊陶業股份有限公司 | Optical wavelength converter and composite optical device |
| JP2020046638A (en) * | 2018-09-21 | 2020-03-26 | 日本特殊陶業株式会社 | Optical wavelength conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102021116016A1 (en) | 2021-12-30 |
| TWI802918B (en) | 2023-05-21 |
| CN113934095B (en) | 2024-01-23 |
| TW202238245A (en) | 2022-10-01 |
| TW202201108A (en) | 2022-01-01 |
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