CN113922019A

CN113922019A - Combiner and communication equipment

Info

Publication number: CN113922019A
Application number: CN202010659231.9A
Authority: CN
Inventors: 王伟曳
Original assignee: Anhui Tatfook Technology Co Ltd
Current assignee: Anhui Tatfook Technology Co Ltd
Priority date: 2020-07-09
Filing date: 2020-07-09
Publication date: 2022-01-11

Abstract

The application discloses combiner and communication equipment, this combiner includes: the high-frequency and low-frequency combiner comprises a dielectric substrate, a high-frequency and low-frequency combiner, a high-frequency shunt and a low-frequency shunt; the high-frequency branch circuit comprises a high-frequency main transmission line, a plurality of high-frequency branch lines and a high-frequency port; the high-low frequency combiner, the high-frequency main transmission line and the high-frequency port are all in a suspension microstrip line structure, and at least part of high-frequency branch lines comprise the suspension microstrip line structure and a microstrip line structure; the low-frequency branch circuit is of a suspended microstrip line structure and comprises a low-frequency main transmission line, a plurality of low-frequency branch lines and a low-frequency port; one end of the high-frequency main transmission line is connected with one end of the high-frequency port, the other end of the high-frequency main transmission line is connected with the high-frequency and low-frequency combiner, one end of the low-frequency main transmission line is connected with one end of the low-frequency port, and the other end of the low-frequency main transmission line is connected with the high-frequency and low-frequency combiner. By the mode, the designed combiner meets the requirements of larger power capacity and smaller volume.

Description

Combiner and communication equipment

Technical Field

The present application relates to the field of communications technologies, and in particular, to a combiner and a communications device.

Background

With the development of 5G technologies (5th Generation mobile networks or 5th Generation with less systems, 5th-Generation, also called 5G or fifth Generation mobile communication technologies), in the early construction of 5G base stations, the base stations need to be compatible with 4G (the 4th Generation mobile communication technology, also called fourth Generation mobile communication technology) communication and 5G communication. Therefore, multi-frequency co-station can be realized, repeated construction is avoided, and the commercialization cost is reduced. In order to meet the requirement that the 4G signal and the 5G signal share the base station, a built-in combiner is required to combine the 4G signal and the 5G signal, so as to reduce the construction cost of the base station.

The base station needs to meet a large power capacity, so that the size of the combiner is large. However, the 5G communication requires a small combiner. Therefore, the existing combiner cannot meet the requirements of both larger power capacity and smaller volume.

Disclosure of Invention

The application provides a combiner and a communication device, which are used for solving the technical problem.

In order to solve the technical problem, the application adopts a technical scheme that: providing a combiner, which comprises a medium substrate, a high-low frequency combiner, a high-frequency shunt and a low-frequency shunt; the dielectric substrate is provided with a first surface and a second surface which are arranged oppositely; the high-low frequency combiner is arranged on the medium substrate and is of a suspended microstrip line structure; the high-frequency branch circuit is arranged on the dielectric substrate and comprises a high-frequency main transmission line, a plurality of high-frequency branch lines and a high-frequency port, wherein the high-frequency branch lines are respectively connected with the high-frequency main transmission line; the high-frequency main transmission line and the high-frequency port are both in a suspension microstrip line structure, and at least part of the high-frequency branch lines comprise the suspension microstrip line structure and a microstrip line structure; the low-frequency shunt is arranged on the dielectric substrate, is of a suspended microstrip line structure and comprises a low-frequency main transmission line, a plurality of low-frequency branch lines and a low-frequency port, wherein the low-frequency branch lines are respectively connected with the low-frequency main transmission line; one end of the high-frequency main transmission line is connected with one end of the high-frequency port, the other end of the high-frequency main transmission line is connected with the high-frequency and low-frequency combiner, one end of the low-frequency main transmission line is connected with one end of the low-frequency port, and the other end of the low-frequency main transmission line is connected with the high-frequency and low-frequency combiner.

Furthermore, the plurality of high-frequency branch lines comprise a first high-frequency branch line I to a third high-frequency branch line III which are sequentially distributed along the extension direction of the high-frequency main transmission line, and the connection position of the high-frequency main transmission line and the first high-frequency branch line is close to the connection position of the high-frequency main transmission line and the high-low frequency combiner relative to the connection position of the high-frequency main transmission line and the second high-frequency branch line; wherein the content of the first and second substances,

the high-frequency branch line I comprises a first section line and a second section line, one end of the first section line of the high-frequency branch line I is connected with a high-frequency main transmission line, the other end of the first section line of the high-frequency branch line I is connected with one end of the second section line of the high-frequency branch line I, the first section line of the high-frequency branch line I is of a suspension microstrip line structure, and the second section line of the high-frequency branch line I is of a microstrip line structure;

one end of a high-frequency branch line II is connected with the high-frequency main transmission line, and the high-frequency branch line II is of a suspended microstrip line structure;

one end of a high-frequency branch line III is connected with the high-frequency main transmission line, and the high-frequency branch line III is of a suspended microstrip line structure.

Further, the width of the second section of line of the first high-frequency branch line is greater than the width of any one of the first section of line of the first high-frequency branch line, the second high-frequency branch line and the third high-frequency branch line;

the length of the high-frequency branch line two is greater than the length of any one of the high-frequency branch line one and the high-frequency branch line three.

Further, the high-frequency main transmission line comprises a first high-frequency transmission line segment to a fourth high-frequency transmission line segment which are sequentially coupled; the first high-frequency transmission line segment and the third high-frequency transmission line segment are positioned on the first surface, and the second high-frequency transmission line segment and the fourth high-frequency transmission line segment are positioned on the second surface; wherein the content of the first and second substances,

the high-frequency and low-frequency combining circuit is positioned on the first surface, and the high-frequency port is positioned on the second surface; one end of the first high-frequency transmission line segment is connected with the high-low frequency combiner, and the other end of the first high-frequency transmission line segment is layered with one end of the second high-frequency transmission line segment, so that the first high-frequency transmission line segment is capacitively coupled with the second high-frequency transmission line segment; the other end of the second high-frequency transmission line segment is layered with one end of the third high-frequency transmission line segment, so that the second high-frequency transmission line segment is capacitively coupled with the third high-frequency transmission line segment; the other end of the third high-frequency transmission line segment is layered with one end of the fourth high-frequency transmission line segment, so that the third high-frequency transmission line segment is capacitively coupled with the fourth high-frequency transmission line segment; the other end of the fourth high-frequency transmission line segment is connected with one end of the high-frequency port;

one end of the first section of the first high-frequency branch line is connected with the second high-frequency transmission line section, one end of the second high-frequency branch line is connected with the third high-frequency transmission line section, and one end of the third high-frequency branch line is connected with the fourth high-frequency transmission line section.

Furthermore, the low-frequency branch circuit is positioned on the first surface, and the plurality of low-frequency branch lines comprise a low-frequency branch line I to a low-frequency branch line IV which are sequentially distributed along the extension direction of the low-frequency main transmission line; the connecting position of the low-frequency main transmission line and the low-frequency branch line I is close to the connecting position of the low-frequency main transmission line and the high-low frequency combiner relative to the connecting position of the low-frequency main transmission line and the low-frequency branch line II;

one end of the low-frequency branch line I is connected with the low-frequency main transmission line;

the low-frequency branch line II comprises a first section of line and a second section of line, one end of the first section of line of the low-frequency branch line II is connected with the low-frequency main transmission line, and the other end of the first section of line of the low-frequency branch line II is connected with one end of the second section of line of the low-frequency branch line II;

the low-frequency branch line III comprises a first section of line and a second section of line, one end of the first section of line of the low-frequency branch line III is connected with the low-frequency main transmission line, and the other end of the first section of line of the low-frequency branch line III is connected with one end of the second section of line of the low-frequency branch line III;

one end of the low-frequency branch line four is connected with the low-frequency main transmission line;

the width of the second section of line of the second low-frequency branch line is greater than that of the first section of line of the second low-frequency branch line; the width of the second section of line of the low-frequency branch line III is greater than that of the first section of line of the low-frequency branch line III; the width of the first low-frequency branch line and the width of the fourth low-frequency branch line are both larger than the width of any one of the second section line of the second low-frequency branch line and the second section line of the third low-frequency branch line.

Further, the dielectric substrate has a first direction and a second direction perpendicular to each other;

the first high-frequency transmission line segments to the fourth high-frequency transmission line segments are arranged in a line and are sequentially arranged along a first direction, and the low-frequency main transmission line extends along a second direction;

the high-frequency branch line I, the high-frequency branch line II and the high-frequency branch line III extend along the second direction, and the low-frequency branch line I, the low-frequency branch line II, the low-frequency branch line III and the low-frequency branch line IV extend along the first direction.

Further, the first high-frequency transmission line segment to the fourth high-frequency transmission line segment have a first side and a second side which are arranged in a second direction in an opposite manner; the low-frequency main transmission line is provided with a first side and a second side which are arranged in a first direction in an opposite way; the first high-frequency transmission line segment to the fourth high-frequency transmission line segment are positioned on the first side of the low-frequency main transmission line, and the low-frequency main transmission line is positioned on the first side of the first high-frequency transmission line segment to the fourth high-frequency transmission line segment;

the high-frequency branch line I, the high-frequency branch line II and the high-frequency branch line III are positioned on the first side from the first high-frequency transmission line segment to the fourth high-frequency transmission line segment; the low-frequency branch line is positioned on the first side of the low-frequency main transmission line; the low-frequency branch line I, the low-frequency branch line II and the low-frequency branch line four are arranged on the second side of the low-frequency main transmission line.

Further, the projection of the high-frequency branch line I in the first direction is located within the projection of the low-frequency branch line III in the first direction, and the projection of the high-frequency branch line I in the second direction is located within the projection of the high-frequency branch line II in the second direction.

Further, the combiner comprises a high-frequency joint and a low-frequency joint, and the high-frequency port comprises a first section of line and a second section of line; the first section of line of the high-frequency port extends along a first direction, and the second section of line of the high-frequency port extends along a second direction; one end of the first section of line of the high-frequency port is connected with the other end of the fourth high-frequency transmission line section, the other end of the first section of line of the high-frequency port is connected with one end of the second section of line of the high-frequency port, and the other end of the second section of line of the high-frequency port is connected with the high-frequency joint; the other end of the low-frequency port is connected with a low-frequency joint; the second segment of the high-frequency port is located on a first side of the first high-frequency transmission line segment to the fourth high-frequency transmission line segment.

In order to solve the above technical problem, the present application further provides a communication device, which includes an antenna and a radio frequency unit connected to the antenna; the radio frequency unit comprises the combiner and is used for filtering the accessed radio frequency signals.

The application has at least the following beneficial effects: through both set up suspension microstrip line structure in the medium base plate, set up the microstrip line structure again, make for suspension microstrip line structure, in microstrip line structure, can realize lower impedance under less size, for microstrip line structure, in suspension microstrip line structure, can realize higher impedance under bigger size, thereby can bear great power capacity, and adopt the combined design combiner of suspension microstrip line structure and microstrip line structure, make for coaxial cavity combiner, the volume of this application combiner is littleer. Therefore, the combiner can meet the requirements of large power capacity and small size.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a combiner according to an embodiment of the combiner of the present application;

fig. 2 is a schematic cross-sectional view of the combiner in fig. 1, which is cut along a cutting line a-a;

fig. 3 is an exploded view of a combiner according to an embodiment of the present application;

fig. 4 is an exploded view of another view of the combiner according to the embodiment of the present application;

fig. 5 is a schematic structural diagram of a first surface of a dielectric substrate according to an embodiment of a combiner of the present application;

fig. 6 is a schematic structural diagram of a second surface of a dielectric substrate according to an embodiment of a combiner;

fig. 7 is a schematic diagram of a planar circuit structure of an embodiment of the combiner of the present application;

fig. 8 is a schematic diagram of an ADS layout of a combiner according to an embodiment of the present application;

fig. 9 is a schematic diagram of an LC circuit of a combiner according to an embodiment of the combiner of the present application;

fig. 10 is a schematic diagram of a simulation of an embodiment of a combiner according to the present application;

fig. 11 is a schematic structural diagram of a communication device according to an embodiment of the present application.

Detailed Description

The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive step are within the scope of the present application.

The terms "first," "second," "third," "fourth," and the like in the description and in the claims of the present application and in the drawings described above, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Through long-term research of the inventor of the application, the microstrip line combiner realizes the impedance of each position of the microstrip line by specifically setting the size of each position of the microstrip line; the size of the place with smaller impedance in the microstrip line is larger than that of the place with larger impedance in the microstrip line; in the low-resistance area of the microstrip line, the size of the microstrip line needs to be designed to be very large, so that the size of the combiner is overlarge, and in the high-resistance area of the microstrip line, the size of the microstrip line needs to be designed to be very small, so that the combiner cannot bear larger power capacity. Therefore, the existing combiner has the problem that the combiner cannot meet the requirements of both larger power capacity and smaller volume. In order to improve the above technical problem, the present application proposes at least the following embodiments.

Referring to fig. 1-4, fig. 1 is a schematic structural diagram of a combiner according to an embodiment of the present application, fig. 2 is a schematic cross-sectional diagram of the combiner according to the embodiment of the present application, which is cut along a cutting line a-a in fig. 1, fig. 3 is a schematic diagram of an explosion structure at a viewing angle of the combiner according to the embodiment of the present application, and fig. 4 is a schematic diagram of an explosion structure at another viewing angle of the combiner according to the embodiment of the present application.

As shown in fig. 1 to 4, the combiner 100 of the present embodiment includes: the antenna comprises a shell 1, a dielectric substrate 2, a high-low frequency combiner B, a high-frequency shunt C and a low-frequency shunt D. The interior of the housing 1 may form a cavity, which may have a first cavity wall 110 and a second cavity wall 120 disposed opposite to each other. The dielectric substrate 2 may be disposed in the cavity and have a first surface 210 and a second surface 220 opposite to each other, the first surface 210 facing the first cavity wall 110, and the second surface 220 facing the second cavity wall 120.

And the high-low frequency combining path B is arranged on the medium substrate 2 and is a suspended microstrip line structure. The high-low frequency combining path B is arranged on the medium substrate 2 and is a suspended microstrip line. The high-frequency shunt circuit C is arranged on the dielectric substrate 2 and comprises a high-frequency main transmission line 3, a plurality of high-frequency branch lines 4 and a high-frequency port 8, wherein the high-frequency branch lines 4 are respectively connected with the high-frequency main transmission line 3; the high-frequency main transmission line 3 and the high-frequency port 8 are both of a suspended microstrip line structure, and at least part of the high-frequency branch lines 4 comprise the suspended microstrip line structure and the microstrip line structure. The low-frequency shunt circuit D is arranged on the dielectric substrate 2, is of a suspended microstrip line structure and comprises a low-frequency main transmission line 5, a plurality of low-frequency branch lines 6 and a low-frequency port 7, wherein the low-frequency branch lines 6 are respectively connected with the low-frequency main transmission line 5.

One end of the high-frequency main transmission line 3 is connected with one end of the high-frequency port 8, the other end of the high-frequency main transmission line is connected with the high-frequency and low-frequency combiner B, one end of the low-frequency main transmission line 5 is connected with one end of the low-frequency port 7, and the other end of the low-frequency main transmission line is connected with the high-frequency and low-frequency combiner B.

In the present embodiment, in the dielectric substrate 2 in the region corresponding to the suspended microstrip line structure, the first surface 210 is disposed at an interval from the first cavity wall 110, and the second surface 220 is disposed at an interval from the second cavity wall 120; in the first surface 210 and the second surface 220 of the dielectric substrate 2 in the area corresponding to the microstrip line structure, one surface provided with the microstrip line structure is spaced apart from one of the first cavity wall 110 and the second cavity wall 120, and the other surface is attached to the other of the first cavity wall 110 and the second cavity wall 120.

In the present embodiment, both the suspended microstrip line structure and the microstrip line structure are provided in the dielectric substrate 2. Compared with a suspended microstrip line structure, the microstrip line structure can realize lower impedance under smaller size; compared with a microstrip line structure, in the suspended microstrip line structure, higher impedance can be realized under a larger size, so that larger power capacity can be borne; and adopt the combination design combiner of suspension microstrip line structure and microstrip line structure for coaxial cavity combiner, the volume of this application combiner 100 is littleer. Therefore, the combiner 100 of the present application can satisfy both the requirements of a larger power capacity and a smaller volume.

As shown in fig. 2-4, the cavity may be a metal cavity. For example, in one embodiment, the chamber may be a silver plated metal chamber. The case 1 may include a cover 11 and a body 12. The cover 11 is provided with a first opening groove 121, and the body 12 is provided with a second opening groove 122. The cover 11 covers the main body 12, and the first opening groove 121 and the second opening groove 122 are butted to form a cavity. The dielectric substrate 2 may be disposed between the cover 11 and the body 12. The dielectric substrate 2 may contact the cover 11 and the body 12, respectively. In other embodiments, the dielectric substrate 2 may only contact the cover 11 or the body 12. When the dielectric substrate 2 contacts the cover 11 and the main body 12, respectively, in order to reduce intermodulation interference, the contact surfaces between the dielectric substrate 2 and the cavity wall of the main body 12 and between the dielectric substrate 2 and the cavity wall of the cover 11 may be welded. The dielectric substrate 2 can be made of a base material with a high dielectric constant, and the dielectric substrate 2 has low intermodulation interference. For example, in one of the embodiments, the dielectric constant of the dielectric substrate 2 may be greater than 3. In one embodiment, the base material of the dielectric substrate 2 may be an FR-4 grade material. The dielectric substrate 2 may be made of a hard insulating material. The hard insulating material is, for example, a ceramic material, a hard rubber material, a glass material, or a resin material. In order to reduce the production cost, in the present embodiment, the dielectric substrate 2 may be a PCB (Printed Circuit Board).

Further, referring to fig. 5-7, fig. 5 is a schematic structural diagram of the first surface of the dielectric substrate according to the embodiment of the combiner of the present application; fig. 6 is a schematic structural diagram of a second surface of a dielectric substrate according to an embodiment of a combiner; fig. 7 is a schematic diagram of a planar circuit structure of an embodiment of the combiner according to the present application.

As shown in fig. 5-7, the plurality of high-frequency branch lines 4 include a first high-frequency branch line 41 to a third high-frequency branch line 43 which are sequentially distributed along the extending direction of the high-frequency main transmission line 3, and the connection position of the high-frequency main transmission line 3 and the first high-frequency branch line 41 is close to the connection position of the high-frequency main transmission line 3 and the high-low frequency combiner B relative to the connection position of the high-frequency main transmission line 3 and the second high-frequency branch line 42; the high-frequency branch line 41 comprises a first section line 410 and a second section line 420, one end of the first section line 410 of the high-frequency branch line 41 is connected with a high-frequency main transmission line 3, the other end of the first section line is connected with one end of the second section line 420 of the high-frequency branch line 41, the first section line 410 of the high-frequency branch line 41 is of a suspended microstrip line structure, and the second section line 420 of the high-frequency branch line 41 is of a microstrip line structure; one end of the high-frequency branch line II 42 is connected with the high-frequency main transmission line 3, and the high-frequency branch line II 42 is of a suspension microstrip line structure; one end of the high-frequency branch line three 43 is connected with the high-frequency main transmission line 3, and the high-frequency branch line three 43 is of a suspension microstrip line structure.

In the present embodiment, the dielectric substrate 2 is provided with a suspended microstrip line structure such as the high-frequency port 8, the high-frequency main transmission line 3, and the first segment 410 of the high-frequency branch line one 41, the high-frequency branch line two 42, the high-frequency branch line three 43, the high-low frequency combining line B, the low-frequency port 7, and the low-frequency branch line D, and a microstrip line structure such as the second segment 420 of the high-frequency branch line one 41. Therefore, the combiner 100 can meet the requirements of large power capacity and small volume. Specifically, compared to a common coaxial cavity combiner, the volume of the combiner 100 of the present application is reduced to at least one third of the volume of a coaxial cavity combiner having the same performance.

In addition, compared with the combiner with a pure microstrip line structure, the insertion loss of the combiner 100 is at least 50% less. Compared with other combiners formed by microstrip lines, the combiner 100 has the advantages of higher quality factor (namely Q value), smaller insertion loss and lower power consumption. In addition, the suspended microstrip line has the advantages of high manufacturing precision, good consistency and convenience for mass production. And the volume of the suspension microstrip line is smaller than that of the resonator in the coaxial cavity combiner, and the volume of the combiner 100 adopting the suspension microstrip line can meet the volume requirement of 5G communication.

In this embodiment, the high frequency shunt C may form a stopband of 500MHz-2700MHz, and a passband of 3300MHz-6000 MHz. The low frequency shunt D may form a stop band of 3300MHz-6000MHz, and a pass band of 500MHz-2700 MHz. Wherein, 500MHz-2700MHz belongs to 4G signal frequency channel, 3300MHz-6000MHz belongs to 5G signal frequency channel, and this application combiner 100 can satisfy the coverage requirement of the full frequency channel of 4G signal and 5G signal promptly. The high-frequency shunt C forms a stop band in the frequency range of the 4G signal and forms a pass band in the frequency range of the 5G signal; the low-frequency branch D forms a pass band in the frequency range of the 4G signal and forms a stop band in the frequency range of the 5G signal. The combiner 100 of the present application can better avoid mutual interference between the 4G signal and the 5G signal.

Specifically, as shown in fig. 5 to 7, the width of the second segment line 420 of the high-frequency branch line one 41 is greater than the width of any one of the first segment line 410, the high-frequency branch line two 42, and the high-frequency branch line three 43 of the high-frequency branch line one 41; the length of the high-frequency branch line two 42 is greater than the length of either the high-frequency branch line one 41 or the high-frequency branch line three 43.

The first segment 410 of the first high-frequency branch line 41 and the second segment 420 of the first high-frequency branch line 41 are equivalent to an inductor and a capacitor connected in series, and the second high-frequency branch line 42 is equivalent to an inductor and a capacitor connected in series. Thus, the first segment 410 of the first high frequency branch line 41 and the second segment 420 of the first high frequency branch line 41, which are connected to each other, form a zero point. High frequency leg two 42 forms a null. It is foreseen that when the width of the high-frequency branch 4 is smaller than a predetermined value and the length is smaller than a predetermined value, the capacitance of the high-frequency branch 4 is negligible, and mainly the inductive effect of the high-frequency branch 4 is exerted. In this case, the high-frequency branch 4 can be equivalent to an inductor. For example, high frequency leg three 43 is equivalent to an inductor.

Wherein, zero point is also called transmission zero point, can realize zero point suppression, is convenient for debugging the index. The transmission zero point can make the transmission function of the combiner 100 equal to zero, that is, the electromagnetic energy at the frequency point corresponding to the transmission zero point cannot pass through the network, so that the complete isolation effect is achieved, the suppression effect on the signals outside the pass band is achieved, and the high isolation between the pass band and a plurality of pass bands or the external world can be better achieved.

As such, in the present embodiment, two zeros of the high-frequency shunt C can be formed. The two zeros can be formed on the band curve on the side of the passband (3300MHz-6000MHz) away from the high-frequency shunt C close to the stopband (500MHz-2700MHz) of the high-frequency shunt C, so that high isolation between the passband of the high-frequency shunt C and the stopband of the high-frequency shunt C can be better realized.

It should be understood that the present application does not limit the size of each branch line 4, and specifically, the zero point position corresponding to the branch line 4 changes with the size of the branch line 4, so in other embodiments, the size of the branch line 4 may be specifically designed according to the required position of the zero point.

In addition, since the width of the second segment line 420 of the first high-frequency branch line 41 is greater than the width of any one of the first segment line 410, the second high-frequency branch line 42 and the third high-frequency branch line 43 of the first high-frequency branch line 41, a larger attaching area is provided between the housing 1 and the dielectric substrate 2, and thus a stable connecting structure can be formed between the housing 1 and the dielectric substrate 2. As for the specific mode of fitting, in order to reduce intermodulation interference, a welding mode can be adopted. The bonding is realized by adopting a welding mode, and the shell 1 further has good thermal conductivity with the dielectric substrate 2, so that the heat radiation performance of the combiner 100 is improved. That is, the heat of the copper cladding in the microstrip line structure and the suspended microstrip line structure can flow through the dielectric substrate 2 and the housing 1 in sequence, and is conducted to the outside of the combiner 100.

Further, the volume of the combiner 100 can be reduced by specifically providing a capacitance structure on the high-frequency main transmission line 3. Referring to fig. 5-7, fig. 7 is a schematic diagram of a planar circuit structure of an embodiment of the combiner of the present application.

Referring to fig. 5 to 7, the high-frequency main transmission line 3 includes a first high-frequency transmission line segment 31 to a fourth high-frequency transmission line segment 34 coupled in sequence; the first high-frequency transmission line segment 31 and the third high-frequency transmission line segment 33 are located on the first surface 210, and the second high-frequency transmission line segment 32 and the fourth high-frequency transmission line segment 34 are located on the second surface 220; the high-frequency and low-frequency combining path B is located on the first surface 210, and the high-frequency port 8 is located on the second surface 220; one end of the first high-frequency transmission line segment 31 is connected to the high-low frequency combination B, and the other end of the first high-frequency transmission line segment 31 is laminated with one end portion of the second high-frequency transmission line segment 32, so that the first high-frequency transmission line segment 31 and the second high-frequency transmission line segment 32 are capacitively coupled; the other end of the second high-frequency transmission line segment 32 is laminated with one end portion of the third high-frequency transmission line segment 33 so that the second high-frequency transmission line segment 32 is capacitively coupled with the third high-frequency transmission line segment 33; the other end of the third high-frequency transmission line segment 33 is laminated with one end portion of the fourth high-frequency transmission line segment 34 so that the third high-frequency transmission line segment 33 is capacitively coupled with the fourth high-frequency transmission line segment 34; the other end of the fourth high-frequency transmission line segment 34 is connected with one end of the high-frequency port 8; one end of the first high-frequency branch line 410 of the first high-frequency branch line 41 is connected to the second high-frequency transmission line segment 32, one end of the second high-frequency branch line 42 is connected to the third high-frequency transmission line segment 33, and one end of the third high-frequency branch line 43 is connected to the fourth high-frequency transmission line segment 34.

The volume of the combiner 100 can be effectively reduced by laminating two high-frequency transmission line segments coupled in sequence in this embodiment to make capacitive coupling between the two high-frequency transmission line segments coupled in sequence, thereby forming a capacitive structure in the high-frequency main transmission line 3. In addition, in this embodiment, the number of the high-frequency transmission line segments is four, and the number of the high-frequency transmission line segments is small, so that the volume of the combiner 100 can be further reduced.

As shown in fig. 3-4, in order to prevent mutual interference between the different high frequency branches 4 and the different low frequency branches 6. The cavity wall corresponding to the high-frequency branch line 4 can extend along the extending direction of the high-frequency branch line 4, so as to form an accommodating cavity for accommodating the high-frequency branch line 4, and different high-frequency branch lines 4 are isolated by the cavity wall of the accommodating cavity, so as to prevent the mutual interference between the different branch lines; the cavity wall corresponding to the low-frequency branch line 6 can extend along the extending direction of the low-frequency branch line 6, so as to form an accommodating cavity for accommodating the low-frequency branch line 6, and different low-frequency branch lines 6 are isolated by the cavity wall of the accommodating cavity, so as to prevent mutual interference among different branch lines.

Further, as shown in fig. 5-7, the low-frequency branch D is located on the first surface 210, and a connection position of the low-frequency main transmission line 5 and the first low-frequency branch 61 is close to a connection position of the low-frequency main transmission line 5 and the high-low frequency combiner B relative to a connection position of the low-frequency main transmission line 5 and the second low-frequency branch 62; one end of the low-frequency branch line I61 is connected with the low-frequency main transmission line 5; the second low-frequency branch line 62 comprises a first section line 610 and a second section line 620, one end of the first section line 610 of the second low-frequency branch line 62 is connected with the low-frequency main transmission line 5, and the other end of the first section line 610 of the second low-frequency branch line 62 is connected with one end of the second section line 620 of the second low-frequency branch line 62; the low-frequency branch line III 63 comprises a first section of line 630 and a second section of line 640, one end of the first section of line 630 of the low-frequency branch line III 63 is connected with the low-frequency main transmission line 5, and the other end of the first section of line 630 of the low-frequency branch line III is connected with one end of the second section of line 640 of the low-frequency branch line III 63; one end of the low-frequency branch line four 64 is connected with the low-frequency main transmission line 5; wherein, the width of the second segment line 620 of the second low frequency branch line 62 is greater than the width of the first segment line 610 of the second low frequency branch line 62; the width of the second segment line 640 of low frequency branch line three 63 is greater than the width of the first segment line 630 of low frequency branch line three 63; the width of low frequency branch line one 61 and the width of low frequency branch line four 64 are both greater than the width of either of second segment line 620 of low frequency branch line two 62 and second segment line 640 of low frequency branch line three 63.

Each low-frequency branch 6 is equivalent to an inductor and a capacitor connected in series, that is, each low-frequency branch 6 forms one zero of the low-frequency shunt circuit D, and the low-frequency branch one 61 to the low-frequency branch four 64 form four transmission zeros of the low-frequency shunt circuit D. The four zeros can better realize high isolation between the passband (500MHz-2700MHz) of the low-frequency shunt D and the stopband (3300MHz-6000MHz) of the low-frequency shunt D.

Since the low-frequency branch line 6 is a suspended microstrip line structure, the low-frequency branch line 6 has both sensitivity and capacitance as the high-frequency branch line 4. The specific shape of the low-frequency branch line 6 is not limited in this embodiment, and those skilled in the art can adjust the specific shape of the low-frequency branch line 6 as needed.

Further, in order to make the high-frequency branch C and the low-frequency branch D regularly distributed in the dielectric substrate 2. Referring to fig. 5-7, the dielectric substrate 2 has a first direction L and a second direction W perpendicular to each other; the first high-frequency transmission line segments 31 to the fourth high-frequency transmission line segments 34 are arranged in a row and are sequentially arranged along the first direction L, and the low-frequency main transmission line 5 extends along the second direction W; the high-frequency branch line one 41, the high-frequency branch line two 42 and the high-frequency branch line three 43 extend in the second direction W, and the low-frequency branch line one 61, the low-frequency branch line two 62, the low-frequency branch line three 63 and the low-frequency branch line four 64 extend in the first direction L.

Further, in order to reduce the volume of the combiner 100, the relative positional relationship among the high-frequency branch line 4, the low-frequency branch line 6, the first to fourth high-frequency transmission line segments 31 to 34, and the low-frequency main transmission line 5 may be specifically set.

As shown in fig. 5-7, specifically, the first to fourth high-frequency transmission line segments 31 to 34 have first and second sides that are oppositely disposed in the second direction W; the low-frequency main transmission line 5 is provided with a first side and a second side which are arranged in a reverse way along the first direction L; the first high-frequency transmission line segment 31 to the fourth high-frequency transmission line segment 34 are positioned on the first side of the low-frequency main transmission line 5, and the low-frequency main transmission line 5 is positioned on the first side of the first high-frequency transmission line segment 31 to the fourth high-frequency transmission line segment 34; the first high-frequency branch line 41, the second high-frequency branch line 42 and the third high-frequency branch line 43 are located on a first side of the first high-frequency transmission line segment 31 to the fourth high-frequency transmission line segment 34.

As such, in the present embodiment, the low-frequency main transmission line 5 and the high-frequency branch line 4 are located on the same side of the first to fourth high-frequency transmission line segments 31 to 34. Compared with the case that the low main transmission line 5 and the high-frequency branch line 4 are located on different two sides of the first to fourth high-frequency transmission line segments 31 to 34, the combiner 100 of the present application has a smaller size in the second direction W.

Furthermore, since in other embodiments the second low frequency branch 62, the third low frequency branch 63 and the fourth low frequency branch 64 are located on the same side of the low frequency main transmission line 5, a certain space between the second low frequency branch 62, the third low frequency branch 63 and the fourth low frequency branch 64 is required to be sufficient for arranging the screws in the combiner 100, which requires a certain space between the low frequency branches 6, which may result in an excessive size of the low frequency branch D in the second direction W. Thus, in this embodiment, as shown in fig. 7, the low frequency branch line three 63 is located on the first side of the low frequency main transmission line 5; the first low-frequency branch line 61, the second low-frequency branch line 62 and the fourth low-frequency branch line 64 are located on the second side of the low-frequency main transmission line 5, so that a sufficient space is reserved between the second low-frequency branch line 62 and the fourth low-frequency branch line 64, and screws in the combiner 100 can be conveniently arranged in the rear. In this way, in this embodiment, the distance between the low-frequency branch line three 63 and the low-frequency branch line two 62 and the distance between the low-frequency branch line three 63 and the low-frequency branch line four 64 do not need to be additionally increased, and the size of the combiner 100 in the second direction W can be reduced.

In addition, in other embodiments, the low-frequency branch line three 63 is located between the high-frequency branch line one 41 and the low-frequency main transmission line 5, which requires a certain interval between the high-frequency branch line one 41 and the low-frequency main transmission line 5, which increases the size of the high-frequency branch C in the first direction L. Therefore, as shown in fig. 7, in the present embodiment, the projection of the high frequency branch line one 41 in the first direction L is located within the projection of the low frequency branch line three 63 in the first direction L, and the projection of the high frequency branch line one 41 in the second direction W is located within the projection of the high frequency branch line two 42 in the second direction W. In this way, the size of the high-frequency shunt C in the first direction L can be reduced.

Further, the combiner 100 may include a high-low frequency combiner terminal 10, a high-frequency terminal 20, and a low-frequency terminal 30, wherein the high-low frequency combiner terminal 10 is connected to the high-low frequency combiner B. The positional relationship between the high frequency terminal 20 and the low frequency terminal 30 may be specifically designed in order to facilitate the connection of the combiner 100 to an external load.

As shown in fig. 7, the high-frequency port 8 includes a first segment line 81 and a second segment line 82, the first segment line 81 of the high-frequency port 8 extends in the first direction L, and the second segment line 82 of the high-frequency port 8 extends in the second direction W; one end of the first segment of line 81 of the high-frequency port 8 is connected with the other end of the fourth high-frequency transmission line segment 34, the other end of the first segment of line 81 of the high-frequency port 8 is connected with one end of the second segment of line 82 of the high-frequency port 8, and the other end of the second segment of line 82 of the high-frequency port 8 is connected with the high-frequency connector 20; the other end of the low-frequency port 7 is connected with a low-frequency joint 30; the second segment 82 of the high-frequency port 8 is located on a first side of the first to fourth high-frequency transmission line segments 31 to 34. As such, in the present embodiment, the high frequency connector 20 and the low frequency connector 30 are located on the same side of the first high frequency transmission line segment 31 to the fourth high frequency transmission line segment 34, so as to facilitate the connection of the combiner 100 with the external load. Further, the high frequency connector 20 and the low frequency connector 30 may be arranged in a line and arranged along the first direction L.

Specifically, in order to make the disclosure of the present application clearer, in this embodiment, refer to fig. 8, where fig. 8 is a schematic view of an ADS layout of a combiner according to an embodiment of the present application.

Since the suspended microstrip line structure and the microstrip line structure are both planar structures in this embodiment, the layout and connection relationship between the components of the suspended microstrip line structure and the microstrip line structure can be represented in the ADS layout. The rectangles or T-shapes at different locations in fig. 8 represent the suspended microstrip line structure and the components at different locations in the microstrip line structure.

As shown in fig. 8, D1 represents a high-low frequency combining; three of D2, D3, and D4, four of D5, D6, D9, and D10, four of D11, D12, D15, and D16, and both of D17 and D18, which sequentially represent the first high-frequency transmission line segment 31 to the fourth high-frequency transmission line segment 34, wherein D2 represents an impedance matching portion in the first high-frequency transmission line segment, both of D4 and D5, both of D10 and D11, and both of D16 and D17, which sequentially represent a laminated portion of the first high-frequency transmission line segment 31 and the second high-frequency transmission line segment 32, a laminated portion of the second high-frequency transmission line segment 32 and the third high-frequency transmission line segment 33, and a laminated portion of the third high-frequency transmission line segment 33 and the fourth high-frequency transmission line segment 34; d3, D6, D9, D12, D15 and D18 respectively represent suspended microstrip line structures for connection; both D7 and D8, both D13 and D14, and D19 represent the high frequency branch line one 41, the high frequency branch line two 42, and the high frequency branch line three 43 in this order; d20 represents the high frequency port 8.

As shown in fig. 8, six of D21, D22, D26, D30, D34 and D38 represent the low-frequency main transmission line 5, wherein D21 represents an impedance matching portion of the low-frequency main transmission line 5; d39 represents the low frequency port 7; three of D23, D24 and D25, three of D27, D28 and D29, three of D31, D32 and D33, and three of D35, D36 and D37 sequentially represent a first low-frequency branch line 61 to a fourth low-frequency branch line 64, wherein the portions of the transition sections with variable widths in the low-frequency branch line 6 represented by D24, D28, D32 and D36 are explained as D24. D24 represents the portion of the low frequency branch line one 61 in the transition section where the width changes between the portion represented by D23 and the portion represented by D25. In the low-frequency branch line one 61, when the width of the portion represented by D23 is the same as the width of the portion represented by D25, the width of the portion represented by D24 is the same as the width of the portion represented by either one of D23 and D25.

Specifically, for a clearer understanding of the present application, reference may be made to fig. 9, where fig. 9 is a schematic diagram of an LC circuit of a combiner according to an embodiment of the combiner in the present application.

As shown in fig. 9, the capacitance C1, the capacitance C2, and the capacitance C3 are respectively the equivalent capacitance of the laminated portion of the first high-frequency transmission line segment 31 and the second high-frequency transmission line segment 32, the equivalent capacitance of the laminated portion of the second high-frequency transmission line segment 32 and the third high-frequency transmission line segment 33, and the equivalent capacitance of the laminated portion of the third high-frequency transmission line segment 33 and the fourth high-frequency transmission line segment 34; the high-frequency branch line one 41, the high-frequency branch line two 42 and the high-frequency branch line three 43 are respectively equivalent to an inductor L1 and a capacitor C4 which are connected in series, an inductor L2 and a capacitor C5 which are connected in series and an inductor L3. The inductor L1 and the capacitor C4 connected in series, and the inductor L2 and the capacitor C5 connected in series each form a zero point of the high-frequency shunt circuit C, and form two zero points of the high-frequency shunt circuit C together, that is, the high-frequency shunt circuit C has a circuit structure with six-order two zero points.

As shown in fig. 9, the inductance L4, the inductance L5, the inductance L6, the inductance L7, and the inductance L8 are equivalent inductances formed by the microstrip main transmission line 5; the low-frequency branch line one 61, the low-frequency branch line two 62, the low-frequency branch line three 63 and the low-frequency branch line four 64 are respectively equivalent to an inductor L9 and a capacitor C6 which are connected in series, an inductor L10 and a capacitor C7 which are connected in series, an inductor L11 and a capacitor C8 which are connected in series, and an inductor L12 and a capacitor C9 which are connected in series.

The inductor L9 and the capacitor C6 connected in series, the inductor L10 and the capacitor C7 connected in series, the inductor L11 and the capacitor C8 connected in series, and the inductor L12 and the capacitor C9 connected in series each form a zero point of the low-frequency shunt D, and form four zero points of the low-frequency shunt D, that is, the low-frequency shunt D has a circuit structure with nine-step four zero points. Therefore, the isolation degree can be improved through the formed zero point between the passband (3300MHz-6000MHz) of the high-frequency shunt circuit C and the passband (500MHz-2700MHz) of the low-frequency shunt circuit D, and the mutual interference between the 5G signal and the 4G signal is reduced.

Specifically, the combiner 100 of the present application can achieve the following indexes.

First, in the high-frequency branch C, the following criteria can be achieved:

in the passband range of 3300MHz-6150MHz, the return loss is greater than or equal to 20 dB;

the maximum insertion loss is 0.4dB within the passband range of 3300MHz-6150 MHz;

in the passband range of 3300MHz-6150MHz, the maximum insertion loss ripple is 0.3 dB;

in the passband range of 3300MHz-6150MHz, the maximum group delay is 4 ns;

in the passband range of 3300MHz-6150MHz, the maximum group delay variation is 3 ns;

within the stop band range of 500MHz-2700MHz, the suppression is greater than or equal to 38 dB;

in the passband range of 3300MHz-6150MHz, the input root mean square power is 50W;

in the passband range of 3300MHz-6150MHz, the input peak power is 500W;

in the range of 3300MHz-6000MHz, the intermodulation interference of any order is greater than or equal to 110 dBm.

Next, in the low-frequency branch D, the following criteria can be achieved:

within the passband range of 500MHz to 2700MHz, the return loss is greater than or equal to 20 dB;

in the passband range of 500MHz-2700MHz, the maximum insertion loss is 0.4 dB;

in the passband range of 500MHz-2700MHz, the maximum insertion loss ripple is 0.3 dB;

in the passband range of 500MHz-2700MHz, the maximum group delay is 4 ns;

in the passband range of 500MHz-2700MHz, the maximum group delay variation is 3 ns;

within the stop band range of 3300MHz-6000MHz, the suppression is greater than or equal to 38 dB;

in the passband range of 500MHz-2700MHz, the input root mean square power is 100W;

within the passband range of 500MHz-2700MHz, the input peak power is 1000W;

in the frequency band range of 300MHz-2700MHz, the intermodulation interference of any order is greater than or equal to 110 dBm.

Please refer to fig. 10, fig. 10 is a simulation diagram of an embodiment of the combiner according to the present application.

See the band curve 200 of the high frequency branch C as shown in fig. 10. Where the point m1 is a frequency point on the band curve 200. The frequency at point m1 is 2700MHz and the rejection at point m1 is 41.88485 dB. In the band plot 200 shown in fig. 10, the pass band is 3300MHz-6000MHz (shown but not labeled in the band plot 200), and the stop band is 500MHz-2700MHz (shown but not labeled in the band plot 200). Wherein 3300MHz-6000MHz belongs to the frequency band of 5G signal, 500MHz-2700MHz belongs to the frequency band of 4G signal. I.e. the high frequency branch satisfies the coverage requirements of the full frequency band of the 4G signal and the 5G signal. In the present embodiment, the interference of the 4G signal to the 5G signal can be reduced by two zeros (shown in the frequency band curve 200 but not labeled) formed on the frequency band curve 200, and the isolation is high.

See return loss curve 300 for high frequency branch C as shown in fig. 10. Where points m2 and m3 are two frequency points on the return loss curve 300. The frequency at point m2 is 3300MHz and the rejection at point m2 is 24.60193 dB. The frequency at point m3 is 6000MHz and the rejection at point m3 is 33.22231 dB. The combiner 100 of the present application thus meets the requirement of return loss greater than or equal to 20 dB.

See the band curve 400 of the low frequency branch D as shown in fig. 10. Where the point m4 is a frequency point on the band curve 400. The frequency at point m4 is 3300MHz and the rejection at point m4 is 38.80301 dB. In the plot 400 of frequency points shown in fig. 10, the pass band is 500MHz-2700MHz (shown but not labeled in the plot 200 of frequency bands), and the stop band is 3300MHz-6000MHz (shown but not labeled in the plot 200 of frequency bands). Wherein 3300MHz-6000MHz belongs to the frequency band of 5G signal, 500MHz-2700MHz belongs to the frequency band of 4G signal. I.e. the low frequency branch D fulfils the full band coverage requirements of the 4G signal and the 5G signal. In the present embodiment, the interference of the 4G signal to the 5G signal can be reduced by four zeros (three zeros are shown in the frequency band curve 200, but not labeled) formed on the frequency band curve 400, and the isolation is high.

See return loss curve 500 for low frequency branch D as shown in fig. 10. Where points m5 and m6 are two frequency points on the return loss curve 500. The frequency at point m5 is 500MHz and the rejection at point m5 is 33.39522 dB. The frequency at point m6 is 2700MHz and the rejection at point m6 is 26.34919 dB. The low frequency shunt of the present application therefore meets the requirement of return loss greater than or equal to 20 dB.

In summary, the combiner 100 of the present application can satisfy the coverage requirements of the full frequency bands of the 4G signal and the 5G signal.

The present application further provides a communication device, as shown in fig. 11, fig. 11 is a schematic structural diagram of a communication device according to an embodiment of the present application.

As shown in fig. 11, the communication device 600 of this embodiment includes an antenna 601 and a Radio frequency unit 602, where the antenna 601 is connected to the Radio frequency unit 602, and the Radio frequency unit 602 may be an rru (remote Radio unit). The rf unit 602 includes the combiner 100 disclosed in the above embodiments, and is configured to filter the accessed rf signal.

In other embodiments, the rf unit 602 may be integrated into the Antenna 601 to form an active Antenna unit (aau).

The above embodiments are merely examples and are not intended to limit the scope of the present disclosure, and all modifications, equivalents, and flow charts using the contents of the specification and drawings of the present disclosure or those directly or indirectly applied to other related technical fields are intended to be included in the scope of the present disclosure.

Claims

1. A combiner, comprising:

the dielectric substrate is provided with a first surface and a second surface which are arranged oppositely;

the high-low frequency combiner is arranged on the medium substrate and is of a suspended microstrip line structure;

the high-frequency branch circuit is arranged on the dielectric substrate and comprises a high-frequency main transmission line, a plurality of high-frequency branch lines and a high-frequency port, and the high-frequency branch lines are respectively connected with the high-frequency main transmission line; the high-frequency main transmission line and the high-frequency port are both in a suspension microstrip line structure, and at least part of the high-frequency branch lines comprise the suspension microstrip line structure and a microstrip line structure;

the low-frequency shunt is arranged on the dielectric substrate, is of a suspended microstrip line structure and comprises a low-frequency main transmission line, a plurality of low-frequency branch lines and a low-frequency port, wherein the low-frequency branch lines are respectively connected with the low-frequency main transmission line;

one end of the high-frequency main transmission line is connected with one end of the high-frequency port, the other end of the high-frequency main transmission line is connected with the high-low frequency combiner, one end of the low-frequency main transmission line is connected with one end of the low-frequency port, and the other end of the low-frequency main transmission line is connected with the high-low frequency combiner.

2. The combiner of claim 1,

the plurality of high-frequency branch lines comprise a first high-frequency branch line I to a third high-frequency branch line III which are sequentially distributed along the extension direction of the high-frequency main transmission line, and the connection position of the high-frequency main transmission line and the first high-frequency branch line is close to the connection position of the high-frequency main transmission line and the high-low frequency combiner relative to the connection position of the high-frequency main transmission line and the second high-frequency branch line; wherein the content of the first and second substances,

the high-frequency branch line I comprises a first section line and a second section line, one end of the first section line of the high-frequency branch line I is connected with the high-frequency main transmission line, the other end of the first section line of the high-frequency branch line I is connected with one end of the second section line of the high-frequency branch line I, the first section line of the high-frequency branch line I is of a suspension microstrip line structure, and the second section line of the high-frequency branch line I is of a microstrip line structure;

one end of the high-frequency branch line II is connected with the high-frequency main transmission line, and the high-frequency branch line II is of a suspension microstrip line structure;

one end of the high-frequency branch line III is connected with the high-frequency main transmission line, and the high-frequency branch line III is of a suspended microstrip line structure.

3. The combiner of claim 2,

the width of the second section of line of the first high-frequency branch line is greater than the width of any one of the first section of line of the first high-frequency branch line, the second high-frequency branch line and the third high-frequency branch line;

the length of the high-frequency branch line II is greater than that of any one of the high-frequency branch line I and the high-frequency branch line III.

4. The combiner of claim 3,

the high-frequency main transmission line comprises a first high-frequency transmission line segment and a fourth high-frequency transmission line segment which are sequentially coupled; the first high-frequency transmission line segment and the third high-frequency transmission line segment are positioned on the first surface, and the second high-frequency transmission line segment and the fourth high-frequency transmission line segment are positioned on the second surface; wherein the content of the first and second substances,

the high-frequency and low-frequency combining path is positioned on the first surface, and the high-frequency port is positioned on the second surface; one end of the first high-frequency transmission line segment is connected with the high-low frequency combiner, and the other end of the first high-frequency transmission line segment is layered with one end of the second high-frequency transmission line segment, so that the first high-frequency transmission line segment and the second high-frequency transmission line segment are capacitively coupled; the other end of the second high-frequency transmission line segment is layered with one end of the third high-frequency transmission line segment, so that the second high-frequency transmission line segment is capacitively coupled with the third high-frequency transmission line segment; the other end of the third high-frequency transmission line segment is layered with one end of the fourth high-frequency transmission line segment, so that the third high-frequency transmission line segment is capacitively coupled with the fourth high-frequency transmission line segment; the other end of the fourth high-frequency transmission line segment is connected with one end of the high-frequency port;

5. The combiner of claim 4,

the low-frequency branch circuit is positioned on the first surface, and the plurality of low-frequency branches comprise a low-frequency branch line I to a low-frequency branch line IV which are sequentially distributed along the extension direction of the low-frequency main transmission line; the connecting position of the low-frequency main transmission line and the low-frequency branch line I is close to the connecting position of the low-frequency main transmission line and the high-low frequency combiner relative to the connecting position of the low-frequency main transmission line and the low-frequency branch line II;

the second low-frequency branch line comprises a first section line and a second section line, one end of the first section line of the second low-frequency branch line is connected with the low-frequency main transmission line, and the other end of the first section line of the second low-frequency branch line is connected with one end of the second section line of the second low-frequency branch line;

the width of the second section of line of the second low-frequency branch line is greater than that of the first section of line of the second low-frequency branch line; the width of the second section of line of the third low-frequency branch line is greater than that of the first section of line of the third low-frequency branch line; the width of the first low-frequency branch line and the width of the fourth low-frequency branch line are both greater than the width of any one of the second section line of the second low-frequency branch line and the second section line of the third low-frequency branch line.

6. The combiner of claim 5,

the dielectric substrate is provided with a first direction and a second direction which are perpendicular to each other;

the first high-frequency transmission line segments to the fourth high-frequency transmission line segments are arranged in a row and are sequentially arranged along the first direction, and the low-frequency main transmission line extends along the second direction;

7. The combiner of claim 6,

the first high-frequency transmission line segment to the fourth high-frequency transmission line segment are provided with a first side and a second side which are arranged in the second direction in an opposite mode; the low-frequency main transmission line is provided with a first side and a second side which are arranged oppositely along the first direction; the first high-frequency transmission line segment to the fourth high-frequency transmission line segment are positioned on the first side of the low-frequency main transmission line, and the low-frequency main transmission line is positioned on the first side of the first high-frequency transmission line segment to the fourth high-frequency transmission line segment;

the high-frequency branch line I, the high-frequency branch line II and the high-frequency branch line III are positioned on the first side from the first high-frequency transmission line segment to the fourth high-frequency transmission line segment; the low-frequency branch line is positioned on the first side of the low-frequency main transmission line; the first low-frequency branch line, the second low-frequency branch line and the four low-frequency branch lines are located on the second side of the low-frequency main transmission line.

8. The combiner of claim 7,

the projection of the first high-frequency branch line in the first direction is located within the projection of the third low-frequency branch line in the first direction, and the projection of the first high-frequency branch line in the second direction is located within the projection of the second high-frequency branch line in the second direction.

9. The combiner of claim 8,

the combiner comprises a high-frequency joint and a low-frequency joint, and the high-frequency port comprises a first section of line and a second section of line;

a first section of the high-frequency port extends along the first direction, and a second section of the high-frequency port extends along the second direction; one end of the first section of wire of the high-frequency port is connected with the other end of the fourth high-frequency transmission line section, the other end of the first section of wire of the high-frequency port is connected with one end of the second section of wire of the high-frequency port, and the other end of the second section of wire of the high-frequency port is connected with the high-frequency joint; the other end of the low-frequency port is connected with the low-frequency joint; the second segment of the high frequency port is located on a first side of the first high frequency transmission line segment to the fourth high frequency transmission line segment.

10. A communication device, characterized in that the communication device comprises an antenna and a radio frequency unit connected with the antenna; the radio frequency unit comprises a combiner according to any of claims 1-9 for filtering the accessed radio frequency signal.