CN113867014B - Bending type electro-optical modulator and manufacturing method thereof - Google Patents
Bending type electro-optical modulator and manufacturing method thereof Download PDFInfo
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
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Abstract
The present disclosure provides a bending type electro-optical modulator and a method for manufacturing the same, comprising: the optical waveguide part comprises two waveguide interference arms which are respectively provided with at least one bending part which is larger than 90 degrees; the electrode part comprises a signal electrode and a plurality of ground electrodes which are distributed along the two waveguide interference arms; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 degrees, the signal electrode is positioned on the inner side of the optical waveguide, and the plurality of ground electrodes are positioned on the outer side of the optical waveguide; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is larger than 90 degrees, the signal electrode crosses the corresponding waveguide interference arm to enter the vicinity of the outer side of the optical waveguide in a loading transconductance electrode mode, and the ground electrode crosses the corresponding waveguide interference arm to enter the vicinity of the inner side of the optical waveguide in a loading transconductance electrode mode, so that the reverse action of an electric field is realized. The present disclosure can reduce the half-wave voltage in multiples on a short device length basis, or reduce the device length in multiples on a low half-wave voltage basis.
Description
Technical Field
The disclosure belongs to the technical field of electro-optical modulators, and particularly relates to a short-length, low-half-wave voltage and broadband electro-optical modulator with bent optical waveguides and electrodes and a manufacturing method thereof.
Background
The electro-optical modulator is a device for loading a high-frequency electric signal onto a carrier optical signal, and is widely applied to high-speed optical communication and microwave photonic systems, half-wave voltage, modulation bandwidth and device size are important indexes for evaluating the electro-optical modulator, and the smaller the half-wave voltage is, the smaller the working voltage of the device is, and the lower the power consumption is; the higher the modulation bandwidth, the larger the data capacity loaded on the electro-optical modulator; the smaller the size, the more compact the integrated photonic chip containing the electro-optic modulator can be made, and the smaller the size of the electro-optic modulator after packaging can be; lithium niobate is a commonly used electro-optical material, the electro-optical coefficient is as high as 31pm/V, thin-film lithium niobate is formed by bonding a lithium niobate thin film to a specific substrate (silicon/lithium niobate/quartz) through a bonding layer (silicon dioxide/BCB), and an optical waveguide on the thin-film lithium niobate can be miniaturized due to high refractive index difference, so that the piezoelectric long product is reduced to 2V cm from 10V cm of a traditional lithium niobate electro-optical modulator. However, the half-wave voltage length product of the thin-film lithium niobate electro-optical modulator still has a lower limit, so that the half-wave voltage and the length of the electro-optical modulator are in a contradictory relationship, that is, the length of the electro-optical modulator must be increased to realize low power consumption at a lower half-wave voltage, which causes the following problems: for an integrated photonic chip mainly comprising a laser, an electro-optical modulator and a detector, the size of the laser is mostly in the hundred um magnitude, the size of the detector is mostly in the ten um magnitude, the length of the electro-optical modulator is in the mm magnitude, and if the length of the electro-optical modulator is lower than 1V half-wave voltage, the length of the electro-optical modulator needs to be more than 2cm, which obviously limits the miniaturization of the size of the integrated photonic chip and the size of the optical module. For the modular package of the electro-optical modulator, the package case choice is also limited by the length of the electro-optical modulator, and the volume after the package is also difficult to shrink.
A coplanar waveguide electrode (CPW) adopted by a common thin-film lithium niobate electro-optical modulator comprises three electrode wires, namely a first ground electrode 22, a signal electrode 21 and a second ground electrode 23, wherein the signal electrode 21 is positioned between the two ground electrodes, and electric fields in opposite directions are formed in electrode gaps on two sides of the signal electrode 21 to generate opposite optical phase shift effects on a first arm optical waveguide 11 and a second arm optical waveguide 12, so that the optical path difference in the two arm optical waveguides is doubled, and the purpose of halving half-wave voltage is achieved. Although thin film lithium niobate electro-optic modulators (cm length) are significantly reduced in size compared to bulk material lithium niobate electro-optic modulators (10cm length), they are still longer than silicon-based and group iii-group based modulators, especially where extremely small (below 1V) half-wave voltages are required, requiring longer electro-optic modulator sizes, which presents difficulties for device packaging and monolithic integration, etc., as shown in fig. 1. In particular, the dimensions referred to herein generally refer to the length of the modulator, i.e., the length along the direction of propagation of the lightwave and microwave, since it is the length of the modulator that is associated with the half-wave voltage, which is inversely proportional to the modulation length, and the modulator length is often several orders of magnitude greater than the width dimension.
Disclosure of Invention
The present disclosure is directed to solving one of the problems set forth above.
To this end, embodiments of the first aspect of the present disclosure provide an electro-optical modulator capable of reducing a half-wave voltage in multiples on the basis of a short device length or reducing a device length in multiples on the basis of a low half-wave voltage, including:
the optical waveguide part comprises an input optical waveguide, a beam splitter, a first waveguide interference arm, a second waveguide interference arm, a beam combiner and an output optical waveguide; the input optical waveguide is connected with one ends of the first waveguide interference arm and the second waveguide interference arm through the beam splitter, and the output optical waveguide is connected with the other ends of the first waveguide interference arm and the second waveguide interference arm through the beam combiner; the first waveguide interference arm and the second waveguide interference arm are respectively provided with at least one bent part which is larger than 90 degrees; and
an electrode portion including a signal electrode and a plurality of ground electrodes arranged along the first waveguide interference arm and the second waveguide interference arm; defining a closed region surrounded by the beam splitter, the first waveguide interference arm, the second waveguide interference arm and the beam combiner in the optical waveguide part as the inner side of the optical waveguide, and defining other regions as the outer side of the optical waveguide; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 degrees, the signal electrode is positioned on the inner side of the optical waveguide, and the plurality of ground electrodes are positioned on the outer side of the optical waveguide; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is larger than 90 degrees, the signal electrode crosses the corresponding waveguide interference arm to enter the vicinity of the outer side of the optical waveguide in a loading transconductance electrode mode, and the ground electrodes cross the corresponding waveguide interference arm to enter the vicinity of the inner side of the optical waveguide in a loading transconductance electrode mode, so that the reverse action of an electric field is realized.
The bending type electro-optical modulator provided by the embodiment of the first aspect of the disclosure has the following characteristics and beneficial effects:
the invention realizes the purpose of reducing the half-wave voltage by increasing the length of the effective modulation region by times on the length of a short modulator by bending the electro-optical modulator and introducing the micro electrode to regulate and control the directions of electric fields in different regions. Equivalently, the length of the device is reduced by times under the same half-wave voltage, so that the occupied space of the modulator can be flexibly distributed, the single-chip integration of the optical chip and the modular packaging of the modulator are greatly facilitated, and the scheme can be extended to modulators made of other materials.
The bending type electro-optical modulator provided by the embodiment of the first aspect of the disclosure can realize that the effective modulation length is multiplied on the electro-optical modulators with the same length, so that the half-wave voltage is multiplied and reduced; or a multiple reduction of the device length at the same half-wave voltage can be achieved. In addition, the occupied space of the electro-optical modulator with the bent structure provided by the embodiment of the first aspect of the disclosure can be flexibly distributed, which is of great help for monolithic integration of optical chips and modular packaging of the electro-optical modulator, and the scheme can be extended to modulators made of other materials.
In some embodiments, when the angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 °, the bending type electro-optic modulator further includes a non-transconductance electrode located near the inner side of the optical waveguide and near the outer side of the optical waveguide, wherein the non-transconductance electrode located near the inner side of the optical waveguide is connected to the signal electrode, and the non-transconductance electrode located near the outer side of the optical waveguide is connected to the ground electrode.
In some embodiments, the transconductance electrode and the non-transconductance electrode are both miniature electrodes having a dimension along the waveguide interference arm that is more than an order of magnitude smaller than the wavelength of the modulated electrical signal;
the non-transconductance electrode is a first T-shaped electrode, and the direction of an electric field formed by the first T-shaped electrode is the same as the direction of an electric field formed by the signal electrode and the ground electrode;
the cross conductive electrode is a second T-shaped electrode, and the direction of an electric field formed by the second T-shaped electrode is opposite to the direction of an electric field formed by the signal electrode and the ground electrode; at the bent portion, the type of the micro-electrode is changed.
In some embodiments, the first T-shaped electrode includes a first horizontal segment electrode disposed close to one side of the first waveguide interference arm or the second waveguide interference arm and a first vertical segment electrode disposed far from one side of the first waveguide interference arm or the second waveguide interference arm, and the first horizontal segment electrode is parallel to the arrangement direction of the first waveguide interference arm or the second waveguide interference arm.
In some embodiments, the second T-shaped electrode includes a second horizontal segment electrode disposed near one side of the first waveguide interference arm or the second waveguide interference arm and a second vertical segment electrode disposed across the other side of the first waveguide interference arm or the second waveguide interference arm, and the second horizontal segment electrode is parallel to the arrangement direction of the first waveguide interference arm or the second waveguide interference arm.
In some embodiments, a pitch of the first T-shaped electrodes and a pitch of the second T-shaped electrodes are both smaller than a pitch of the signal electrode and the first ground electrode or the second ground electrode.
In some embodiments, the bend portion is curved, scalloped, saw-toothed, square, parabolic, or other curvilinear shape.
In some embodiments, the bending type electro-optical modulator provided in the embodiments of the first aspect of the present disclosure further includes:
a buffer layer disposed between the optical waveguide portion and the electrode portion for reducing absorption of an optical field by the electrode portion in the vicinity of the first waveguide interference arm or the second waveguide interference arm;
a bonding layer on a bottom surface of the optical waveguide portion; and
a substrate located on a bottom surface of the bonding layer.
In some embodiments, the buffer layer is made of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride or benzocyclobutene, the bonding layer is made of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride or benzocyclobutene, the substrate is made of quartz, silicon or lithium niobate, and the input optical waveguide, the first waveguide interference arm, the second waveguide interference arm and the output optical waveguide are made of lithium niobate or lithium tantalate or barium titanate.
The method for manufacturing the bending type electro-optical modulator provided by the embodiment of the second aspect of the disclosure comprises the following steps:
preparing a substrate;
forming a bonding layer on the substrate through film deposition or magnetron sputtering;
forming a first waveguide interference arm and a second waveguide interference arm on the bonding layer through bonding, thinning and polishing or ion slicing stripping, photoetching and etching processes in sequence;
forming buffer layers on the first waveguide interference arm and the second waveguide interference arm through thin film deposition or magnetron sputtering;
forming an electrode portion on the buffer layer; the electrode part comprises a signal electrode and a plurality of ground electrodes which are arranged along the first waveguide interference arm and the second waveguide interference arm; defining a closed region surrounded by the beam splitter, the first waveguide interference arm, the second waveguide interference arm and the beam combiner in the optical waveguide part as the inner side of the optical waveguide, and defining other regions as the outer side of the optical waveguide; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 degrees, the signal electrode is positioned on the inner side of the optical waveguide, and the plurality of ground electrodes are positioned on the outer side of the optical waveguide; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is larger than 90 degrees, the signal electrode crosses the corresponding waveguide interference arm to enter the vicinity of the outer side of the optical waveguide in a loading transconductance electrode mode, and the ground electrodes cross the corresponding waveguide interference arm to enter the vicinity of the inner side of the optical waveguide in a loading transconductance electrode mode, so that the reverse action of an electric field is realized.
Drawings
Fig. 1 is a top view of a conventional thin-film lithium niobate modulator structure.
Fig. 2 is a schematic diagram of a bending type electro-optic modulator and a partial enlargement according to an embodiment of the disclosure.
Fig. 3 is a partial cross-sectional view of a meander-type electro-optic modulator according to another embodiment of the disclosure.
Fig. 4 is a partial cross-sectional view of a meander-type electro-optic modulator provided in a third embodiment of the disclosure.
Fig. 5 (a) and (b) are optical field cross-sectional distributions of the first T-shaped electrode and the second T-shaped electrode on both sides of the corresponding waveguide interference arm in the embodiment shown in fig. 5, respectively.
Fig. 6 (a) and (b) are top views of electric field distributions of the first T-shaped electrode and the second T-shaped electrode, respectively, in the embodiment shown in fig. 5.
Reference numerals are as follows:
100-an optical waveguide portion; 110-an input optical waveguide, 121-a beam splitter, 122-a beam combiner, 130-a first waveguide interference arm, 140-a second waveguide interference arm, 150-an output optical waveguide;
200-an electrode portion; 210-signal electrode, 220-first ground electrode, 230-second ground electrode, 240-microelectrode, 241-first horizontal segment electrode, 242-first vertical segment electrode, 243-second horizontal segment electrode, 244-second vertical segment electrode;
300-a buffer layer;
400-a bonding layer;
500-substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
On the contrary, this application is intended to cover any alternatives, modifications, equivalents, and alternatives that may be included within the spirit and scope of the application as defined by the appended claims. Furthermore, in the following detailed description of the present application, certain specific details are set forth in order to provide a better understanding of the present application. It will be apparent to one skilled in the art that the present application may be practiced without these specific details.
Referring to fig. 2, an embodiment of the present disclosure provides a bending type electro-optical modulator, including:
an optical waveguide section 100 including an input optical waveguide 110, a beam splitter 121, a first waveguide interference arm 130, a second waveguide interference arm 140, a beam combiner 122, and an output optical waveguide 150; the input optical waveguide 110 is connected to one ends of the first waveguide interference arm 130 and the second waveguide interference arm 140 through the beam splitter 121, and the output optical waveguide 150 is connected to the other ends of the first waveguide interference arm 130 and the second waveguide interference arm 140 through the beam combiner 122; the first waveguide interference arm 130 and the second waveguide interference arm 140 each have at least one bent portion greater than 90 °, respectively;
an electrode part 200 including a signal electrode 210 and first and second ground electrodes 220 and 230 arranged along the first and second waveguide interference arms 130 and 140; defining a closed area surrounded by the beam splitter 121, the first waveguide interference arm 130, the second waveguide interference arm 140 and the beam combiner 122 in the optical waveguide part 100 as the inner side of the optical waveguide, and defining other areas as the outer side of the optical waveguide; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 degrees, the signal electrode 210 is located at the inner side of the optical waveguide, and the first ground electrode 220 and the second ground electrode 230 are located at the outer side of the optical waveguide; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is greater than 90 °, the signal electrode 210 crosses over the corresponding waveguide interference arm to enter the vicinity of the outer side of the optical waveguide in a loading transconductance electrode manner, and the first ground electrode 220 and the second ground electrode 230 crosses over the corresponding waveguide interference arm to enter the vicinity of the inner side of the optical waveguide in a loading transconductance electrode manner, so that the effect of electric field reversal is realized.
In some embodiments, when the angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 °, the bending type electro-optic modulator provided by the embodiment of the first aspect of the present disclosure further includes a non-transconductance electrode located near the inner side of the optical waveguide and located near the outer side of the optical waveguide, where the non-transconductance electrode located near the inner side of the optical waveguide is connected to the signal electrode 210, and the non-transconductance electrode located near the outer side of the optical waveguide is connected to the first ground electrode 220 and the second ground electrode 230.
In some embodiments, the transconductance electrode and the non-transconductance electrode introduced into the two gaps formed between the signal electrode 210 and the first ground electrode 220 and the second ground electrode 230 are all micro electrodes 240, the dimension along the waveguide interference arm direction is smaller than the wavelength of the modulated electrical signal by more than one order of magnitude, and the micro electrodes 240 can be used for regulating the electric field direction. The transconductance electrode and the non-transconductance electrode are respectively in an interdigital shape and a reverse interdigital shape; when the light propagation direction of the waveguide interference arm is the same as the initial light propagation direction (the direction is defined as + Y direction, and the + Y direction is rotated by 90 ° counterclockwise and is defined as + Z direction, where the Y direction is the length direction of the electro-optical modulator, and the Z direction is the width direction of the electro-optical modulator), the micro electrodes 240 arranged between the signal electrode 210 and the first ground electrode 220 and the second ground electrode 230, that is, the non-transconductance electrodes, are in a reverse-finger shape, and the electric field direction formed by the micro electrodes 240 is the same as the electric field direction formed between the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230; when the light propagation direction of the waveguide interference arm is opposite to the initial light propagation direction (the direction is defined as-Y direction), the micro electrodes 240 arranged between the signal electrode 210 and the first ground electrode 220 and the second ground electrode 230, that is, transconductance electrodes, are interdigital, and the direction of the electric field formed by the micro electrodes 240 is opposite to the direction of the electric field formed between the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230; at the bent portion of each waveguide interference arm, the type of the micro-electrode 240 is changed. This is disclosed realizes adjusting and controlling different section electrode field directions through introducing miniature electrode for to same root waveguide interference arm every section modulation effect can superpose, has guaranteed the maximize of electrode to the optical waveguide modulation effect.
In some embodiments, referring to the enlarged partial view of the upper right corner in fig. 2, the non-transconductance electrode includes a plurality of first T-shaped electrodes arranged periodically, and the direction of the electric field formed between the first T-shaped electrodes on both sides of the waveguide interference arm is the same as the electric field between the signal electrode and the ground electrode. The first T-shaped electrode comprises a first horizontal segment electrode 241 arranged close to one side of the first waveguide interference arm 130 (or the second waveguide interference arm 140) and a first vertical segment electrode 242 arranged far away from one side of the first waveguide interference arm 130 (or the second waveguide interference arm 140), the first horizontal segment electrode 241 is parallel to the arrangement direction of the first waveguide interference arm 130 (or the second waveguide interference arm 140), one end of the first vertical segment electrode 242 is vertically connected with the first horizontal segment electrode 241, the other end of the first vertical segment electrode 242 is connected with the first ground electrode 220 (or the signal electrode 210) positioned on the same side of the first waveguide interference arm 130 (or the second waveguide interference arm 140) and the first horizontal segment electrode 241, the distance between the first T-shaped electrodes is smaller than the distance between the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230 (the distance refers to the distance between the parallel segment electrodes of the T-shaped electrodes on two adjacent sides of the waveguide interference arm), this helps to further enhance the electric field intensity across the first waveguide interference arm 130 (or the second waveguide interference arm 140). Preferably, the first T-shaped electrodes are spaced 1/20 to 1/5 apart from the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230.
In some embodiments, referring to the enlarged partial view of the lower right corner in fig. 2, the transconductance electrode includes a plurality of second T-shaped electrodes arranged periodically, and the direction of the electric field formed between the second T-shaped electrodes on both sides of the waveguide interference arm is opposite to the electric field between the signal electrode and the ground electrode. The second T-shaped electrode includes a second horizontal segment electrode 243 disposed near one side of the second waveguide interference arm 140 (or the first waveguide interference arm 130) and a second vertical segment electrode 244 disposed across the other side of the second waveguide interference arm 140 (or the first waveguide interference arm 130), the second horizontal segment electrode 243 is parallel to the arrangement direction of the second waveguide interference arm 140 (or the first waveguide interference arm 130), one end of the second vertical segment electrode 244 is vertically connected to the second horizontal segment electrode 243, the other end of the second vertical segment electrode 244 spans the other side of the second waveguide interference arm 140 (or the first waveguide interference arm 130) and is connected to the signal electrode 210 (or the first ground electrode 220) disposed at the other side of the second waveguide interference arm 140 (or the first waveguide interference arm 130), and the distance between the second T-shaped electrodes is smaller than the distance between the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230, preferably, the second T-shaped electrode has a spacing of 1/20 to 1/5 of the spacing between the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230. Although the direction of the electric field formed between the second T-shaped electrodes on the two sides of the waveguide interference arm is opposite to the direction of the electric field formed between the signal electrode and the ground electrode, the direction of the electric field after superposition is still the direction of the electric field formed between the second T-shaped electrodes because the distance between the second T-shaped electrodes is smaller than the distance between the signal electrode and the ground electrode, and therefore the effective modulation length of the waveguide modulation arm is maximized.
In some embodiments, referring to the partial enlarged view of the lower left corner in fig. 2, the micro-electrode at the bending portion of the waveguide interference arm adopts a transition structure, and the specific structure thereof is as follows: the first T-shaped electrode 242 crosses the waveguide interference arm from the ground electrode (or signal electrode) side into the signal electrode (or ground electrode) side and switches to the second T-shaped electrode 244 to effect the switch from the first T-shaped electrode to the second T-shaped electrode. The transition structure at the 90 ° bend is used to ensure that the electric field sensed by the waveguide interference arm 130 at the bend portion is always along the + Z direction, and the electric field sensed by the waveguide interference arm 140 at the bend portion is always along the-Z direction, so as to ensure the maximization of the modulation effect of the electrode on the optical waveguide.
In one embodiment, the straight portions of the waveguide interference arms are equal in length, the bent portions of the waveguide interference arms are equal in shape and size, and the bent portions are all bent at an angle of 180 °.
In some embodiments, referring to FIG. 3, the electro-optic modulator of embodiments of the present disclosure further includes a buffer layer 300 disposed between the optical waveguide portion 100 and the electrode portion 200 to reduce absorption of the optical field by the electrodes on both sides of each waveguide interferometric arm and the top electrode portion. The buffer layer 300 is made of a low refractive index material, typically silicon dioxide.
In some embodiments, since the first T-shaped electrode and the second T-shaped electrode mainly cause an increase in capacitance of the transmission line and have a small influence on the inductance of the transmission line, so that the microwave speed is slowed, that is, the first T-shaped electrode and the second T-shaped electrode are slow-wave electrodes, in order to maximize the bandwidth of the device, the bonding layer 400 is disposed on the bottom surfaces of the first waveguide interference arm 130 and the second waveguide interference arm 140, and the substrate 500 is disposed on the bottom surface of the bonding layer 400. Preferably, the first waveguide interference arm 130 and the second waveguide interference arm 140 are both made of lithium niobate, preferably thin-film lithium niobate, and the thickness of the thin-film lithium niobate is less than 1 micron, so that a very small bending radius can be realized due to strong limitation of the thin-film lithium niobate optical waveguide on an optical field, and the size of the modulator in the width direction (Z direction) can still be small; the substrate 500 is preferably a low dielectric constant material, typically quartz crystal; bonding layer 400 is preferably a low dielectric constant bonding material, typically silicon dioxide and benzocyclobutene. So as to overcome the microwave slow wave brought by the electrode, reduce the effective refractive index of the microwave and match the refractive index of the optical group.
In some embodiments, since the electric field of the second T-electrode is more concentrated, the microwave refractive index of the second T-electrode exhibits a characteristic greater than the microwave effective refractive index of the first T-electrode under the same signal electrode, ground electrode and T-electrode parameters, the present disclosure further includes the following two adjustment modes by finely adjusting the microwave refractive index to match the microwave effective refractive index with the optical group refractive index at all positions of the modulator:
the first is to independently design (increase/decrease) parameters such as the period and duty ratio of the first T-shaped electrode, the width of the signal electrode 210 connected with the first T-shaped electrode, the distance between the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230, the period and duty ratio of the second T-shaped electrode, the width of the signal electrode 210 connected with the duty ratio, and the distance between the signal electrode 210 and the first ground electrode 220 or the second ground electrode 230, so as to realize the speed matching of the microwave and the optical wave at each point in the propagation process;
second, for the substrate 500 under the different segment electrodes is removed or partially removed, the bonding layer 400 is removed or partially removed to change the microwave effective refractive index of the different segment electrodes to match the refractive index of the groups of light waves at various points during propagation, as shown in fig. 4.
The microwave speed and the optical wave group speed on a transmission path can be kept consistent by regulating and controlling the parameters of the T-shaped electrode, and a large electro-optic bandwidth can be still kept on a long-distance microwave and optical wave interaction path; and because the decoupling of electric field and magnetic field is realized by adopting the way of T-shaped electrode loading, namely the electric field is mainly concentrated between the T-shaped electrodes at both sides of the waveguide interference arm, the magnetic field is mainly concentrated at the edge of the signal electrode, the electric field and the magnetic field can be respectively regulated and controlled by the T-shaped electrode and the signal electrode, thereby increasing the width of the signal electrode and reducing the transmission loss of microwave under the condition of ensuring impedance matching, and because the parameters of the T-shaped electrode are not changed, the reduction of the microwave loss does not take the sacrifice of half-wave voltage as cost, namely, the embodiment of the disclosure also ensures the large bandwidth (low microwave loss) of the device.
In some embodiments, the shape of the bending portion of the waveguide interference arm of the bending-type electro-optic modulator provided in the embodiments of the first aspect of the present disclosure is not limited to the semicircular shape shown in fig. 2, and may also be in an arc shape, a fan shape, a sawtooth shape, a square shape, a parabolic shape, or other curved shapes.
The manufacturing method of the bending structure electro-optic modulator provided by the embodiment of the disclosure comprises the following steps:
1. forming a bonding layer 400 on the substrate 500 by thin film deposition, magnetron sputtering or spin coating;
2. bonding the lithium niobate material on the bonding layer 400;
3. obtaining the thin-film lithium niobate by adopting a thinning and polishing or ion slicing and stripping process;
4. preparing a thin film lithium niobate waveguide on the thin film lithium niobate through processes such as photoetching, etching and the like to form a first waveguide interference arm 130 and a second waveguide interference arm 140;
5. forming a buffer layer 300 on the first waveguide interference arm 130 and the second waveguide interference arm 140 by thin film deposition or magnetron sputtering or spin coating;
6. an electrode structure is formed on the buffer layer 300 in alignment and is electroplated to form the electrode portion 200.
The following are specific embodiments of the meander-type electro-optic modulator provided by the present disclosure:
the first embodiment is as follows:
the method is characterized in that a thin-film lithium niobate material with a quartz substrate is adopted, the thickness of the thin-film lithium niobate is 600nm, a lithium niobate ridge waveguide is formed by adopting a dry etching process, the method comprises one-step preparation of a Y-branch structure and a bending structure, the width of the top of the lithium niobate ridge waveguide is 1um, the inclination angle of the side wall of the lithium niobate ridge waveguide is 60 degrees, and the etching depth of the lithium niobate ridge waveguide is 200 nm. Depositing a layer of 600nm post-silicon dioxide on the silicon dioxide to reduce the absorption of the electrode to the optical waveguide, and then aligning to manufacture a traveling wave electrode, wherein the main parameters are as follows: the width of the signal electrode 210 is 80um, the distance between the unloaded signal electrode 210 and the first ground electrode 220 or the second ground electrode 230 is 20um, the period for loading the first T-shaped electrode and the second T-shaped electrode is 50um, the lengths of the first horizontal segment electrode 241 and the second horizontal segment electrode 243 are 44um, the widths of the effective loading electrodes 241 and 243 are 2um, the length of the first vertical segment electrode 242 in the first T-shaped electrode is 7um, the width is 2um, and the distance between the first horizontal segment electrodes 241 at two sides of the waveguide interference arm 130 or 140 in the first T-shaped electrode correspondingly and respectively connected with the signal electrode and the ground electrode is 2 um. The length of the second vertical section electrode 244 in the second T-shaped electrode is 11um, the width is 2um, and the distance between the first horizontal section electrodes 243 on two sides of the waveguide interference arm 130 or 140 in the second T-shaped electrode correspondingly connected with the signal electrode and the ground electrode is 2 um. The bending radius of the second ground electrode 220 is 100um, the optical waveguides of the two arms are respectively positioned in the center of the electrode gap, the bending radius of the first waveguide interference arm 130 is 110um/210um, the bending radius of the second waveguide interference arm 140 is 110um/210um, the optical field distribution under different cross sections is shown in fig. 5, and for the case of the first T-shaped electrode, the optical absorption loss is 0.05dB/cm, as shown in (a) in fig. 5; in the case of the second T-shaped electrode, the additional light absorption loss by the second vertical-segment electrode 244 is 0.5dB/cm, as shown in fig. 5 (b).
The electro-optical modulator of the embodiment is bent twice and divided into three sections, each section is 6mm in length, the electric field distribution condition along the transmission line is simulated, as shown in fig. 6, extraction of electric fields with different cross sections and light field overlap integration shows that the average electro-optical overlap factor under the first T-shaped electrode is 0.3, as shown in (a) in fig. 6; the average electro-optical overlap factor under the second T-shaped electrode was 0.24, as shown in fig. 6 (b). Under the condition, the half-wave voltage of the device is 1V, the microwave characteristic simulation of the electrode shows that the 6dB electric bandwidth of the electrode is more than 50GHz, and the electro-optic response 3dB bandwidth is calculated through a transmission line model and is more than 50 GHz.
Example two:
the difference between the first embodiment and the second embodiment is that the length of each segment of the first embodiment is changed to 3mm, and the bending electrode includes 5 segments.
Example three:
the difference between the present embodiment and the first embodiment is that the bent portion in the first embodiment is changed to be sinusoidal.
Example four:
the difference between this embodiment and the first embodiment is that this embodiment changes the lithium niobate used in the first embodiment to lithium tantalate.
In the description herein, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present disclosure have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the disclosure, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. A meander-type electro-optic modulator, comprising:
the optical waveguide part comprises an input optical waveguide, a beam splitter, a first waveguide interference arm, a second waveguide interference arm, a beam combiner and an output optical waveguide; the input optical waveguide is connected with one end of the first waveguide interference arm and one end of the second waveguide interference arm through the beam splitter, and the output optical waveguide is connected with the other end of the first waveguide interference arm and the other end of the second waveguide interference arm through the beam combiner; the first waveguide interference arm and the second waveguide interference arm are respectively provided with at least one bent part which is larger than 90 degrees; and
an electrode portion including a signal electrode and a plurality of ground electrodes arranged along the first waveguide interference arm and the second waveguide interference arm; defining a closed region surrounded by the beam splitter, the first waveguide interference arm, the second waveguide interference arm and the beam combiner in the optical waveguide part as the inner side of the optical waveguide, and defining other regions as the outer side of the optical waveguide; when an included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 degrees, the signal electrode is positioned on the inner side of the optical waveguide, the plurality of ground electrodes are positioned on the outer side of the optical waveguide, the bent electro-optic modulator further comprises non-transconductance electrodes positioned near the inner side of the optical waveguide and near the outer side of the optical waveguide, wherein the non-transconductance electrodes positioned near the inner side of the optical waveguide are connected with the signal electrode, and the non-transconductance electrodes positioned near the outer side of the optical waveguide are connected with the ground electrodes; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is larger than 90 degrees, the signal electrode crosses over the corresponding waveguide interference arm in a mode of loading the transconductance electrode, the transconductance electrode enters the vicinity of the outer side of the optical waveguide, the ground electrodes cross over the corresponding waveguide interference arm in a mode of loading the transconductance electrode, and the transconductance electrode enters the vicinity of the inner side of the optical waveguide, so that the effect of electric field reversal is realized.
2. The meander-type electro-optic modulator of claim 1, wherein the transconductance electrode and the non-transconductance electrode are both micro-electrodes having a dimension along the waveguide interference arms that is more than an order of magnitude smaller than the wavelength of the modulated electrical signal;
the non-transconductance electrode is a first T-shaped electrode, and the direction of an electric field formed by the first T-shaped electrode is the same as the direction of an electric field formed by the signal electrode and the ground electrode;
the cross conductive electrode is a second T-shaped electrode, and the direction of an electric field formed by the second T-shaped electrode is opposite to the direction of an electric field formed by the signal electrode and the ground electrode; at the bent portion, the type of the micro-electrode is changed.
3. The bending type electro-optic modulator according to claim 2, wherein the first T-shaped electrode comprises a first horizontal segment electrode disposed close to one side of the first waveguide interference arm or the second waveguide interference arm and a first vertical segment electrode disposed far from one side of the first waveguide interference arm or the second waveguide interference arm, the first horizontal segment electrode being parallel to a direction of arrangement of the first waveguide interference arm or the second waveguide interference arm.
4. The bending-type electro-optic modulator according to claim 2, wherein the second T-shaped electrode comprises a second horizontal segment electrode disposed adjacent to one side of the first waveguide interference arm or the second waveguide interference arm and a second vertical segment electrode disposed across the other side of the first waveguide interference arm or the second waveguide interference arm, the second horizontal segment electrode being parallel to the arrangement direction of the first waveguide interference arm or the second waveguide interference arm.
5. The meander-type electro-optic modulator of claim 2, wherein a pitch of the first T-shaped electrodes and a pitch of the second T-shaped electrodes are each smaller than a pitch of the signal electrode and the first ground electrode or the second ground electrode.
6. The meander-type electro-optic modulator of claim 1, wherein the meander portion has an arc shape, a sector shape, a sawtooth shape, a square shape, or a parabolic shape.
7. The meander-type electro-optic modulator of claim 1, further comprising:
a buffer layer disposed between the optical waveguide portion and the electrode portion for reducing absorption of an optical field by the electrode portion in the vicinity of the first waveguide interference arm or the second waveguide interference arm;
a bonding layer on a bottom surface of the optical waveguide portion; and
a substrate located on a bottom surface of the bonding layer.
8. The meander-type electro-optic modulator of claim 7, wherein the buffer layer is made of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, or benzocyclobutene, the bonding layer is made of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, or benzocyclobutene, the substrate is made of quartz, silicon, or lithium niobate, and the input optical waveguide, the beam splitter, the first waveguide interference arm, the second waveguide interference arm, the beam combiner, and the output optical waveguide are made of lithium niobate or lithium tantalate or barium titanate.
9. A method for manufacturing a bending type electro-optical modulator according to any one of claims 1 to 8, comprising:
preparing a substrate;
forming a bonding layer on the substrate through film deposition, magnetron sputtering or spin coating;
forming a first waveguide interference arm and a second waveguide interference arm on the bonding layer through bonding, thinning and polishing or ion slicing stripping, photoetching and etching processes in sequence;
forming buffer layers on the first waveguide interference arm and the second waveguide interference arm through thin film deposition or magnetron sputtering or spin coating;
forming an electrode portion on the buffer layer; the electrode part comprises a signal electrode and a plurality of ground electrodes which are arranged along the first waveguide interference arm and the second waveguide interference arm; defining a closed region surrounded by the beam splitter, the first waveguide interference arm, the second waveguide interference arm and the beam combiner in the optical waveguide part as the inner side of the optical waveguide, and defining other regions as the outer side of the optical waveguide; when an included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is less than or equal to 90 degrees, the signal electrode is positioned on the inner side of the optical waveguide, the plurality of ground electrodes are positioned on the outer side of the optical waveguide, the bent electro-optic modulator further comprises non-transconductance electrodes positioned near the inner side of the optical waveguide and near the outer side of the optical waveguide, wherein the non-transconductance electrodes positioned near the inner side of the optical waveguide are connected with the signal electrode, and the non-transconductance electrodes positioned near the outer side of the optical waveguide are connected with the ground electrodes; when the included angle between the light propagation direction of the waveguide interference arm and the initial light propagation direction is larger than 90 degrees, the signal electrode crosses over the corresponding waveguide interference arm in a mode of loading the transconductance electrode, the transconductance electrode enters the vicinity of the outer side of the optical waveguide, the ground electrodes cross over the corresponding waveguide interference arm in a mode of loading the transconductance electrode, and the transconductance electrode enters the vicinity of the inner side of the optical waveguide, so that the effect of electric field reversal is realized.
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