CN113857159A - Rapid self-cleaning process for conductive sputtering target surface - Google Patents
Rapid self-cleaning process for conductive sputtering target surface Download PDFInfo
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- CN113857159A CN113857159A CN202111442116.7A CN202111442116A CN113857159A CN 113857159 A CN113857159 A CN 113857159A CN 202111442116 A CN202111442116 A CN 202111442116A CN 113857159 A CN113857159 A CN 113857159A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- Chemical Kinetics & Catalysis (AREA)
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a rapid self-cleaning process for a conductive sputtering target surface, which comprises the following steps: vacuumizing the sputtering coating equipment to within 1e-4mBar at normal temperature, completely opening a cathode target door of the sputtering coating equipment, igniting argon by using a cathode capable of normally starting glow, generating glow discharge, and keeping high sputtering power; increasing the current of the electromagnetic auxiliary coil to enhance the magnetic field, so that the glow discharge area extends to the vicinity of the surface of the target material to be cleaned; and starting the target cathode to be cleaned, starting the target under the low-power condition, gradually increasing the sputtering power after the discharge on the surface of the target is stable, and keeping the preset time length to finish the self-cleaning process of the surface of the target. The self-cleaning process provided by the invention avoids disassembly operation, saves a large amount of labor and time cost, and effectively improves the working efficiency.
Description
Technical Field
The invention relates to the technical field of surface engineering, in particular to a rapid self-cleaning process for a conductive sputtering target material surface.
Background
In the sputtering PVD process, targets of various materials, such as elemental metal targets, non-metal targets, alloy targets, ceramic targets, etc., are used. In the middle and high-end field coating, in order to reduce the influence of pollutants on the surface of the target material on the film-substrate combination effect and the film layer purity, the surface of the target material is subjected to pre-cleaning treatment before PVD coating so as to remove impurities, molecules, cortex and other attachments adsorbed on the surface of the target material. Under the condition that the surface pollutants of the target are less, the target can be easily self-cleaned in a coating process in a glow discharge mode, and the specific implementation modes are as follows: before formal coating, the cathode target door is kept in a closed state, argon is introduced, high voltage is applied to the target to generate cathode glow discharge, and the cleaning purpose is achieved by adopting a mode of gradually transitioning from low power to high power. However, when the target is not used for a long time, the target is poisoned or is seriously polluted by other insulating film layers, the conductivity of the surface of the target is deteriorated, so that the cathode cannot work normally, and the target is melted or the power supply is damaged if the voltage is continuously increased.
The condition that the target material surface is seriously polluted and cannot be normally used is a common phenomenon in the sputtering PVD industry, the common method is to polish the target material by using a tool or detach the target material (a valuable and easily damaged material), clean the target material by physical means such as sand blasting or polishing and the like, recover the electric conduction effect of the target material surface, and then perform glow cleaning. Although the method is commonly used, the target needs to be disassembled and assembled, the operation is complicated, and the labor and time costs are high.
Therefore, a rapid self-cleaning process for the surface of a conductive sputtering target material, which is simple in operation and low in cost, is urgently needed to be developed, and particularly aims at the surface of a target material with serious pollution.
Disclosure of Invention
When one group of targets are not used for a long time or a cathode target door is abnormally closed, the surface of the target is easily polluted by oxygen and hydrocarbon gas to form a pollution layer with poor conductivity in a subsequent coating process, and the target with the seriously polluted surface cannot normally start to work. In order to solve the problems, the invention provides a rapid self-cleaning process for the surface of the conductive sputtering target.
The invention discloses a rapid self-cleaning process for the surface of a conductive sputtering target, which comprises the following steps:
s1, vacuumizing the sputtering coating equipment to within 1e-4mBar at normal temperature; opening all cathode target doors of the sputtering coating equipment;
s2, igniting argon by using a cathode capable of normally starting glow, generating glow discharge and keeping high sputtering power; increasing the current of the electromagnetic auxiliary coil to enhance the magnetic field, so that the glow discharge area extends to the vicinity of the surface of the target material to be cleaned;
s3, starting the target cathode to be cleaned, starting the target to be cleaned under the low-power condition of 0.1-1.0KW, gradually increasing the sputtering power after the discharge on the surface of the target to be cleaned is stable, and keeping the preset duration to finish the target surface self-cleaning process.
As a further improvement of the embodiment of the present invention, in step S3, after the glow discharge region extends to a position near the surface of the target to be cleaned, if the target to be cleaned cannot glow, the process time is prolonged, the glowing target is used to coat the surface of the target to be cleaned until a conductive layer with a sufficient thickness is formed on the surface of the target to be cleaned, and then the glowing and self-cleaning steps are completed with low power parameters.
As a further improvement of the embodiment of the invention, the sputtering coating equipment is closed field unbalanced magnetron sputtering coating equipment with an electromagnetic coil auxiliary function or magnetron sputtering equipment capable of forming a strong closed field.
As a further improvement of the embodiment of the invention, two or more groups of targets are installed in the conductive sputtering equipment, and at least one group of targets can be normally started; the target materials are all conductive materials.
As a further improvement of the embodiment of the present invention, the target material to be cleaned includes a Cr target.
As a further improvement of the embodiment of the present invention, the contaminants of the contamination layer on the surface of the target to be cleaned are formed by contamination of the process gas or the process, so that the cathode cannot work normally; the thickness of the contamination layer does not exceed 10 μm.
As a further improvement of the embodiment of the invention, in the step S2, the high sputtering power is kept at 10-15 KW.
As a further improvement of the embodiment of the invention, in the self-cleaning process of the surface of the target material to be cleaned, the current of the electromagnetic auxiliary coil is increased to 8-10A so as to generate enough magnetic field intensity to guide the glow discharge area to expand to the vicinity of the surface of the target material to be cleaned.
As a further improvement of the embodiment of the present invention, in the step S3, the sputtering power is increased to 10-12 KW.
The invention has the following beneficial effects:
1. the invention provides a rapid self-cleaning process applied to a conductive sputtering target surface in closed field unbalanced magnetron sputtering coating equipment with an electromagnetic coil auxiliary function, in particular to a target surface with serious pollution;
2. aiming at the situation that the target surface is seriously polluted and needs to be disassembled and then physically cleaned, the invention provides a method for quickly and automatically cleaning pollutants on the surface of the target, which avoids disassembling operation, saves a large amount of labor and time cost, effectively improves the working efficiency and avoids the risk of occupational injury caused by sand blasting and polishing operations of operators;
3. the conventional operation needs to disassemble the target for grinding and polishing, and then the target is installed back to the original position, at least 2 operators are needed to participate in the disassembling and assembling operation process, at least 1 professional polishing operator is needed for grinding and polishing, and the total working hour is consumed for about 5-8 hours.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of the working principle of a rapid self-cleaning process for the surface of a conductive sputtering target according to the present invention;
the corresponding part names indicated by the numbers in the figures are as follows:
1-closed field magnetic lines; 2-an electromagnetic auxiliary coil; 3-a target material; 4-a cathode; 5-sputtering coating equipment cavity; 6-target door.
Detailed Description
In order to facilitate an understanding of the invention, the invention will be described more fully and in detail below with reference to the accompanying drawings and preferred embodiments, but the scope of the invention is not limited to the specific embodiments below. It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention discloses a rapid self-cleaning process for the surface of a conductive sputtering target, which comprises the following steps:
s1, vacuumizing the sputtering coating equipment to within 1e-4mBar at normal temperature; opening all cathode target doors of the sputtering coating equipment;
s2, igniting argon by using a cathode capable of normally starting glow, generating glow discharge and keeping high sputtering power; increasing the current of the electromagnetic auxiliary coil to enhance the magnetic field, so that the glow discharge area extends to the vicinity of the surface of the target material to be cleaned; wherein, the high sputtering power is kept at 10-15 KW; increasing the current of the electromagnetic auxiliary coil to 8-10A to generate enough magnetic field intensity to guide the glow discharge area to expand to the vicinity of the surface of the target material to be cleaned;
s3, starting the target cathode to be cleaned, starting the target under the low-power condition of 0.1-1.0KW, gradually increasing the sputtering power after the discharge on the surface of the target to be cleaned is stable and keeping the preset duration, and gradually increasing the sputtering power to 10-12KW to finish the self-cleaning process of the target surface.
In step S3, after the glow discharge region extends to the vicinity of the surface of the target to be cleaned and the target to be cleaned cannot glow, the process time can be prolonged, the glowing target is used to coat the surface of the target to be cleaned until a conductive layer with sufficient thickness is formed on the surface of the target to be cleaned, and then the glowing and self-cleaning steps are completed with low power parameters.
In the embodiment of the invention, as shown in fig. 1, the sputtering coating device is a closed field unbalanced magnetron sputtering coating device with an electromagnetic coil auxiliary function, or a magnetron sputtering device capable of forming a strong closed field. FIG. 1 is a schematic diagram showing the operation principle of a rapid self-cleaning process for the surface of an electrically conductive sputtering target; wherein 1 is a closed field magnetic line; 2 is an electromagnetic auxiliary coil; 3 is a target material, 4 is a cathode, 5 is a sputtering coating equipment cavity, and 6 is a target door.
Preferably, two or more groups of targets are arranged in the sputtering equipment, and at least one group of targets can be normally started; the target materials are all conductive materials, and the common target materials are Cr targets and Al targets.
The self-cleaning process applied to the target surface pollution layer of the target surface to be cleaned in the embodiment of the invention is formed by the pollution of process gas or a manufacturing process, so that the cathode cannot work normally; the thickness of the pollution layer on the surface of the target material is not more than 10 mu m.
Example 1.
In the electromagnetic coil auxiliary closed field magnetron sputtering coating equipment provided with 2 groups of Al targets and 2 groups of Cr targets, 2 groups of Al targets form an alumina pollution layer on the surface layer due to high temperature, and the conductivity of the alumina pollution layer is extremely poor, so that the Al targets cannot normally start to work.
The process according to the invention operates as follows:
1. vacuumizing the sputtering coating equipment to within 1e-4mBar at normal temperature;
2. the target doors of 4 groups of cathodes were all opened;
3. applying voltage to the 2 groups of Cr target cathodes to generate cathode glow discharge, wherein the cathode sputtering power is 15 KW;
4. increasing the current of the electromagnetic auxiliary coil to 10A, wherein the generated magnetic field is enough to expand the glow discharge area of the 2 Cr target cathodes to the whole coating cavity;
5. and applying voltage to 2 groups of Al target cathodes, setting the cathode sputtering power to be 0.5KW, starting brightness on the surface of the Al target, gradually increasing the cathode sputtering power of the Al target to 12KW after discharge is stable, and keeping for 5min to finish the self-cleaning process of the surface of the Al target.
According to the process, the automatic operation can be finished after the staff calls the program, and the working time is 20 min. Compared with the traditional method, the efficiency is improved by more than 95%, the grinding and polishing treatment processes are saved, and operators are prevented from being injured by occupations.
Example 2
In the electromagnetic coil auxiliary closed field magnetron sputtering coating equipment provided with 2 groups of Ti targets and 1 group of Cr targets, the Cr targets are not completely closed due to mechanical failure of the Cr target cathode target, the surface of the Cr target is seriously polluted by acetylene gas in the subsequent process, a black mixture pollution layer is formed, and the Cr targets cannot effectively work.
The selection of the routine operation needs to go through the following steps:
1. removing the Cr target; 2. sand blasting; 3. installing the steel pipe back to the original position; 4. the surface is sputter cleaned to a usable state by a glow discharge process. 2 operators are required to participate in the disassembling and assembling operation process, 1 worker is required for sand blasting, and the total working hour is about 5 hours.
The process according to the invention operates as follows:
1. vacuumizing the sputtering coating equipment to within 1e-4mBar at normal temperature; 2. the target doors of 3 groups of cathodes were all opened; 3. applying voltage to 2 groups of Ti target cathodes to generate cathode glow discharge, wherein the cathode sputtering power is 10 KW; 4. increasing the current of the electromagnetic auxiliary coil to 8A; 5. plating a layer of metal Ti film on the surface of the polluted Cr target by using 2 groups of Ti targets until the surface of the Cr target appears metallic color; 6. and applying voltage to the Cr target cathode, setting the cathode sputtering power to be 1KW, starting the surface of the Cr target to glow, gradually increasing the cathode sputtering power of the Cr target to 10KW after the discharge is stable, and keeping for 5min to finish the self-cleaning process of the surface of the Cr target. According to the process, the automatic operation can be finished after the staff calls the program, and the working hour is 25 min. Compared with the traditional method, the efficiency is improved by more than 90%, the sand blasting process is avoided, and the occupational injury of sand blasting is eliminated.
Claims (9)
1. A rapid self-cleaning process for the surface of a conductive sputtering target is characterized by comprising the following steps:
s1, vacuumizing the sputtering coating equipment to within 1e-4mBar at normal temperature; opening all cathode target doors of the sputtering coating equipment;
s2, igniting argon by using a cathode capable of normally starting glow, generating glow discharge and keeping high sputtering power; increasing the current of the electromagnetic auxiliary coil to enhance the magnetic field, so that the glow discharge area extends to the vicinity of the surface of the target material to be cleaned;
s3, starting the target cathode to be cleaned, starting the target to be cleaned under the low-power condition of 0.1-1.0KW, gradually increasing the sputtering power after the discharge on the surface of the target to be cleaned is stable, and keeping the preset duration to finish the target surface self-cleaning process.
2. The process of claim 1, wherein after the glow discharge region extends to a position near the target surface to be cleaned, if the target cannot glow, the process time is prolonged, the glowing target is used to coat the target surface to be cleaned until a conductive layer with a sufficient thickness is formed on the target surface to be cleaned, and then the glowing and self-cleaning steps are performed with low power parameters.
3. The process of claim 1, wherein the sputter coating equipment is a closed field unbalanced magnetron sputter coating equipment with electromagnetic coil auxiliary function or a magnetron sputter coating equipment capable of forming a strong closed field.
4. The process of claim 1, wherein two or more sets of targets are installed in the sputtering apparatus and at least one set of targets can be ignited normally; the target materials are all conductive materials.
5. The process of claim 1, wherein the target to be cleaned comprises a Cr target.
6. The process of claim 1, wherein the contamination of the contamination layer on the target surface to be cleaned is formed by contamination of process gas or process gas, causing the cathode to fail to work; the thickness of the contamination layer does not exceed 10 μm.
7. The process of claim 1, wherein the sputtering power in S2 is kept high at 10-15 KW.
8. The process of claim 1, wherein during the self-cleaning of the target surface to be cleaned, the current of the electromagnetic auxiliary coil is increased to 8-10A to generate sufficient magnetic field strength to guide the glow discharge region to expand to the vicinity of the target surface to be cleaned.
9. The process of claim 1, wherein the sputtering power is increased step by step to 10-12KW in S3.
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| CN202111442116.7A CN113857159B (en) | 2021-11-30 | 2021-11-30 | Rapid self-cleaning process for conductive sputtering target surface |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85102600A (en) * | 1985-04-01 | 1986-09-17 | 大连工学院 | Ion plating technique by high energy level magnetron sputtering |
| CN1844448A (en) * | 2005-04-08 | 2006-10-11 | 北京实力源科技开发有限责任公司 | Magnetron sputtering target with on-line cleaning function and its application method |
| US20110220148A1 (en) * | 2010-03-12 | 2011-09-15 | Tokyo Electron Limited | Method for performing preventative maintenance in a substrate processing system |
| CN111519151A (en) * | 2020-04-30 | 2020-08-11 | 苏州艾钛科纳米科技有限公司 | Multi-element hard coating and electromagnetic enhanced magnetron sputtering preparation process thereof |
| CN112301320A (en) * | 2020-09-07 | 2021-02-02 | 苏州贤辉新纺织科技有限公司 | Process method for treating flame retardance of polyester material automotive interior by adopting magnetron sputtering technology |
-
2021
- 2021-11-30 CN CN202111442116.7A patent/CN113857159B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85102600A (en) * | 1985-04-01 | 1986-09-17 | 大连工学院 | Ion plating technique by high energy level magnetron sputtering |
| CN1844448A (en) * | 2005-04-08 | 2006-10-11 | 北京实力源科技开发有限责任公司 | Magnetron sputtering target with on-line cleaning function and its application method |
| US20110220148A1 (en) * | 2010-03-12 | 2011-09-15 | Tokyo Electron Limited | Method for performing preventative maintenance in a substrate processing system |
| CN111519151A (en) * | 2020-04-30 | 2020-08-11 | 苏州艾钛科纳米科技有限公司 | Multi-element hard coating and electromagnetic enhanced magnetron sputtering preparation process thereof |
| CN112301320A (en) * | 2020-09-07 | 2021-02-02 | 苏州贤辉新纺织科技有限公司 | Process method for treating flame retardance of polyester material automotive interior by adopting magnetron sputtering technology |
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