CN113851559B - 一种TOPCon电池的制备方法 - Google Patents
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Abstract
本发明公开了一种TOPCon电池的制备方法,在硅片背面LPCVD制备隧穿氧化层并沉积本征非晶硅之后,先去除硅片正面非晶硅绕镀,然后在硅片背面涂覆液态掺杂剂并烘干,然后对硅片进行退火,通过退火使非晶硅晶化且使杂质激活。本发明可实现单面扩散并无绕扩,是可用于制备n+POLO结构的工艺方案,满足高产能需求的同时,优化了工艺窗口,规避了绕扩风险,可实现退火前去除非晶硅绕镀,简化工艺步骤,保护硅片正面结构,提高工艺可控性,还能解决扩散浓度与隧穿层效果之间的矛盾。
Description
技术领域
本发明涉及光伏领域,具体涉及一种TOPCon电池的制备方法。
背景技术
为提高光伏发电的比例,降本和提效是光伏制造的两大主线,目前主流的光伏电池为晶体硅太阳能电池,TOPCon技术由于其工艺路线与传统PERC电池产线极高的兼容性以及其明显的效率增益,成为目前最有潜力的新型高效电池技术之一,其相关研究逐日增加。
随着TOPCon电池技术的开发和导入,产业化n型TOPCon电池转换效率已超过24%。n+ POLO结构的制备是该电池的核心技术,目前行业内常见的规制备方案有两种:①热氧+LPCVD原位掺杂+高温退火;②热氧+LPCVD本征沉积+扩散掺杂。方案②中采用的本征polySi沉积速率远远高于原位沉积,可有效降低LPCVD的工艺时间,而原位沉积则能提供更加优异的掺杂曲线和更大的隧穿氧层工艺窗口,与传统PERC电池相比,两种方案均增加了整体工艺的复杂度和流程时间,使得相应制造成本增加。如何继续提高光伏电池的转换效率和降低工艺流程时间进而降低制造成本,是光伏行业共同的目标和方向。
目前TOPCon电池的工艺流程主要有:
方案①:碱制绒→硼扩散→背面去除BSG,背面碱抛光→隧穿氧+N+非晶硅沉积→正面去绕镀→退火→正背面镀膜→印刷电极,烧结;
方案②:碱制绒→硼扩散→背面去除BSG,背面碱抛光→隧穿氧+本征非晶硅沉积→磷扩散→正面去PSG→正面去绕镀→正背面镀膜→印刷电极,烧结。
在POLO结构制备方面,由于本征沉积速率远高于原位沉积,同样Poly Si厚度方案②产能优势明显,而方案①采用退火进行晶化工艺简单可控,且无需考虑绕扩风险可在晶化前进行去绕镀处理减少了工艺步骤,且碱抛过程中正面结构无刻蚀风险(BSG保护),两种方案分别在产能与工艺可控性上存在缺陷。
发明内容
本发明的目的在于提供一种TOPCon电池的制备方法,在硅片背面LPCVD制备隧穿氧化层并沉积本征非晶硅之后,先去除硅片正面非晶硅绕镀,然后在硅片背面涂覆液态掺杂剂并烘干,然后对硅片进行退火,通过退火使非晶硅晶化且使杂质激活。
优选的,所述TOPCon电池的制备方法,其具体步骤包括:
1)硅片清洗制绒;
2)硼扩散;
3)去除背面BSG;
4)背面碱抛光;
5)背面LPCVD制备隧穿氧化层并沉积本征非晶硅;
6)去除正面非晶硅绕镀;
7)背面涂覆液态掺杂剂并烘干;
8)退火,使非晶硅晶化且使杂质激活;
9)正背面镀膜;
10)印刷电极;
11)烧结。
优选的,步骤6)中,采用链式碱抛去除正面非晶硅绕镀。
优选的,步骤7)中,先将硅片正面平放在载板上,然后在硅片背面涂覆液态掺杂剂。
优选的,所述载板具有吸附功能,通过负压吸附将硅片固定在载板上。
优选的,所述涂覆采用旋涂、滚涂或喷涂方式。
优选的,所述液态掺杂剂含有Ⅴ族元素。
优选的,所述Ⅴ族元素选自N、P、As、Sb、Bi中的一种或几种。
优选的,所述载板具有加热功能,通过载板加热将掺杂剂烘干。
优选的,步骤8)中,退火在管式炉或链式炉中进行。
优选的,步骤8)中,退火的工艺条件为:700~900℃高温3~20min,常压,氮气气氛。
本发明的优点和有益效果在于:提供一种TOPCon电池的制备方法,在LPCVD完成本征非晶硅沉积后,采用单面掺杂剂涂覆+退火的方案实现a-Si的晶化与单面扩散,完成n+Poly Si的制备,形成n+ POLO结构;本发明可实现单面扩散并无绕扩,是可用于制备n+POLO结构的工艺方案,满足高产能需求的同时,优化了工艺窗口,规避了绕扩风险,可实现退火前去除非晶硅绕镀,简化工艺步骤,保护硅片正面结构,提高工艺可控性,还能解决扩散浓度与隧穿层效果之间的矛盾。
本发明具有如下特点:
1、现有技术LPCVD沉积a-Si后进行高温磷扩(气相扩散)制备n+ POLO结构,隧穿氧化层厚度仅1~2nm,扩散工艺需同时满足浓度需求和氧化层的隧穿效果,工艺窗口较小,容错率差。本发明可通过液态掺杂剂的溶液配制自由控制掺杂浓度,通过退火工艺控制晶化与氧化层内扩程度,从而实现工艺控制性增强。
2、现有技术的磷扩采用气相扩散,无法规避绕扩风险,只能扩散后先进行正面HF去PSG,再完成正面去绕镀工艺,工艺复杂度增加,且HF可能导致无绕镀区域阻挡层BSG被刻蚀,之后碱洗去绕镀工艺则存在损伤正面绒面的风险。本发明采用单面涂覆液态掺杂剂的方式进行硅片背面掺杂元素的引入,硅片正面被载板吸附遮蔽,规避了掺杂剂绕涂至硅片正面的风险,且载板带加热功能,可使涂覆烘干一步完成固化,之后采用退火方式进行晶化+磷原子的掺杂(杂质推进并激活),由于正面有50~120nm厚度的阻挡层BSG保护,而且磷原子在阻挡层BSG里的扩散速度非常低,因此在本发明只有3~20min的退火时间内磷原子无法穿透阻挡层BSG绕扩到正面,避免了绕扩风险,本发明可以实现退火前直接去除绕镀,极大简化了工艺流程,保护了正面绒面结构。
具体实施方式
下面结合实施例,对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
本发明提供一种TOPCon电池的制备方法,其具体步骤包括:
1)硅片清洗制绒;
2)硼扩散;
3)去除背面BSG;
4)背面碱抛光;
5)背面LPCVD制备隧穿氧化层并沉积本征非晶硅;
6)链式碱抛去除正面非晶硅绕镀;
7)背面涂覆液态掺杂剂并烘干:可以先将硅片正面平放在具有负压吸附功能和加热功能的载板上,通过负压吸附将硅片固定在载板上,然后在硅片背面涂覆内含有Ⅴ族元素的液态掺杂剂(Ⅴ族元素选自N、P、As、Sb、Bi中的一种或几种),然后通过载板加热将掺杂剂烘干;涂覆可以采用旋涂、滚涂或喷涂方式;
8)退火:在管式炉或链式炉中对硅片进行退火,使非晶硅晶化且使杂质(N、P、As、Sb、Bi中的一种或几种)推进并激活;退火的工艺条件为:700~900℃高温3~20min,常压,氮气气氛;
9)正背面镀膜;
10)印刷电极;
11)烧结。
本发明在n型TOPCon电池上的具体实施案例如下:
选用电阻率范围0.8~1.5ohm.cm,少子寿命>2.5 ms的n型单晶硅片,厚度170µm,尺寸为166mm;
在KOH和H2O2混合溶液中去除硅片表面的损伤层,然后在KOH溶液中进行制绒,硅片表面形成金字塔绒面,金字塔绒面大小控制1~5µm;
绒面完成后,硅片正面采用B扩散制备发射极,方阻110~150 ohm.cm,正面BSG厚度50~120nm,硅片背面去BSG后进行碱抛,使硅片背面的反射率大于40%;
碱抛面(硅片背面)在LPCVD中单面制备隧穿层(1~2nm)+ a-Si(100~150nm),完成非晶硅沉积后利用碱洗去除正面非晶硅绕镀(BSG作为阻挡层);
然后将硅片正面平放在载板上,在硅片背面滚涂含有P的液态掺杂剂,并于100~200℃烘干10~120s;
然后在管式炉中进行退火,使非晶硅晶化且使杂质(P)推进并激活,退火的工艺条件为:700~900℃高温3~20min,常压,氮气气氛;
然后在硅片正面使用ALD沉积3~10nm厚度三氧化二铝,并使用PECVD制备75~80nm厚度的氮化硅;在硅片背面沉积70~100nm厚度的氮化硅,完成电池前驱体制备;
表面钝化完成后在硅片正面和背面进行金属化,用丝网印刷的方式依次在硅片背面印刷银浆电极、正面印刷银铝浆电极,然后烧结完成电池制备。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (1)
1.一种TOPCon电池的制备方法,其特征在于,其具体步骤包括:
1)硅片清洗制绒;
2)硼扩散;正面BSG厚度50~120nm;
3)去除背面BSG;
4)背面碱抛光;
5)背面LPCVD制备隧穿氧化层并沉积本征非晶硅;
6)链式碱抛去除正面非晶硅绕镀;
7)背面涂覆液态掺杂剂并烘干:先将硅片正面平放在具有负压吸附功能和加热功能的载板上,通过负压吸附将硅片固定在载板上,然后在硅片背面涂覆内含有Ⅴ族元素的液态掺杂剂,涂覆采用旋涂、滚涂或喷涂方式,硅片正面被载板吸附遮蔽,规避了掺杂剂绕涂至硅片正面的风险;然后通过载板加热将掺杂剂烘干;载板加热使涂覆烘干一步完成固化;
8)退火:在管式炉或链式炉中对硅片进行退火,使非晶硅晶化且使杂质推进并激活;退火的工艺条件为:700~900℃高温3~20min,常压,氮气气氛;
9)正背面镀膜;
10)印刷电极;
11)烧结。
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